CN105139803A - AMOLED column driving circuit and driving method thereof - Google Patents
AMOLED column driving circuit and driving method thereof Download PDFInfo
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- CN105139803A CN105139803A CN201510574383.8A CN201510574383A CN105139803A CN 105139803 A CN105139803 A CN 105139803A CN 201510574383 A CN201510574383 A CN 201510574383A CN 105139803 A CN105139803 A CN 105139803A
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Abstract
The invention provides an AMOLED column driving circuit and a driving method thereof. The AMOLED column driving circuit comprises a linear digital-analog conversion circuit; a Gamma correction output stage circuit used for carrying out Gamma correction on analog signals output by the linear digital-analog conversion circuit and driving an OLED pixel array to emit light; a clock control signal generation circuit used for providing clock signals and control signals; and a bias circuit used for providing a reference voltage. The AMOLED column driving method comprises the steps of: converting digital signals into the analog signals, carrying out Gamma correction on the analog signals, and then inputting the analog signals after the Gamma correction into the OLED pixel array so as to drive the OLED pixel array to emit light. According to the invention, the linear DAC does not generate precision losses in the AMOLED column driving circuit, complex matching work is not needed by a resistor string when a resistor string DAC is used, and the design difficulty is lowered; in addition, the DAC relatively small in size can be adopted, the integral area of the circuit is further reduced, and the AMOLED column driving circuit has the advantages of simple design, small area, high precision, good image displaying effect and the like.
Description
Technical field
The present invention relates to flat panel display technology field, particularly relate to a kind of AMOLED column drive circuit and driving method thereof.
Background technology
In recent years, AMOLED (Active-matrixorganiclight-emittingdiode, active matrix organic light-emitting diode) increasing for the equipment such as mobile phone, panel computer, reason is compared with other display techniques, and it has the advantages such as ultra-thin, wide viewing angle, low-power consumption, fast response time, color be true to nature.AMOLED type of drive mainly contains electric current driving, voltage driven and digital drive etc., wherein, the fast response time of voltage driven, and the AMLCD display driver technology type of this mode and current main flow is seemingly, is therefore widely used in AMOLED display driver.Owing to there is the problem that the luminosity of OLED pixel and input voltage are nonlinear relationship in AMOLED display field, correct so the output voltage of AMOLED column drive circuit has to pass through Gamma, thus the color of AMOLED display system details in a play not acted out on stage, but told through dialogues GTG is obviously improved, the color error of each GTG obviously reduces, details in a play not acted out on stage, but told through dialogues color detail is clearly demarcated, brightness of image solid colour, saturating good brightness, contrast obviously, the TV of same size difference screen to color show obviously not unanimously.
Gamma in AMOLED display system corrects and usually completes in column drive circuit.Prior art is divided into two kinds, and one is that analog domain Gamma corrects, and another kind is that numeric field Gamma corrects.
Analog domain Gamma corrects mainly through design non-linear D/A converter (Digital-to-AnalogConverter, DAC) realize, the realization of non-linear DAC is the size by adjusting resistance in overall resistance string, obtain nonlinear reference voltage, owing to there is the resistance of a large amount of different resistance in overall resistance string, therefore the build-out resistor that requires a high expenditure of energy string, and area consumption is very large, simultaneously, usually need much different reference voltages in the overall resistance string of non-linear DAC, which in turns increases the complexity of circuit.
Numeric field Gamma corrects and carries out mainly for linear DAC, concrete mode is mapped in non-linear gamma curve by supplied with digital signal by look-up table, the digital signal obtained after mapping is as the input of linear DAC, the non-linear conversion between original input and output can be realized in this way easily, the mode that numeric field Gamma corrects simplifies the design of DAC, and linear DAC less for some areas can be applied in the middle of AMOLED column drive circuit by this mode, reduce the area of driving chip, but linear Gamma corrects and also comes with some shortcomings, such as this mode has loss to the precision of linear DAC in mapping process, and the lut circuits of containment mapping relation will be integrated in column drive circuit usually, this will increase chip area further.
In sum, in prior art, the design of analog domain Gamma correcting circuit is comparatively complicated; And numeric field Gamma corrects simplicity of design, and linear DAC less for area can be used for AMOLED column drive circuit, but it can reduce the precision of linear DAC, therefore, area and precision how to take into account AMOLED column drive circuit have become one of those skilled in the art's problem demanding prompt solution.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of AMOLED column drive circuit and driving method thereof, design for solving analog domain Gamma correcting circuit in prior art is comparatively complicated, and numeric field Gamma correcting circuit makes the problems such as the precision reduction of linear DAC.
For achieving the above object and other relevant objects, the invention provides a kind of AMOLED column drive circuit, described AMOLED column drive circuit at least comprises:
Linear number analog conversion circuit, receives digital signal and described digital signal is converted to simulating signal;
Gamma corrects output-stage circuit, be connected to the output terminal of described linear number analog conversion circuit, Gamma correction is carried out to the simulating signal that described linear number analog conversion circuit exports, and the signal after correcting is outputted to OLED pel array, to drive described OLED pel array luminous;
Clock control signal produces circuit, for described AMOLED column drive circuit provides clock signal and control signal;
Biasing circuit, for described AMOLED column drive circuit provides reference voltage or reference current.
Preferably, also comprise the input stage circuit being connected to described linear number analog conversion circuit input end, described input stage circuit comprises one in register, latch cicuit, level shifting circuit or combination, described input stage circuit receives described digital signal, and outputs to described linear number analog conversion circuit to after described digital signal buffer memory, level conversion.
Preferably, described linear number analog conversion circuit is period analog conversion circuit or resistance string D/A converting circuit.
Preferably, described Gamma correction output-stage circuit comprises current field Gamma correction module and current/voltage modular converter; Described current field Gamma correction module receives the output signal of described linear number analog conversion circuit, and carries out the rear output current signal of Gamma correction to the output signal of described linear number analog conversion circuit; Described current/voltage modular converter is connected to the output terminal of described current field Gamma correction module, and the current signal that described current field Gamma correction module exports is converted to voltage signal.
More preferably, described current field Gamma correction module comprises the first ~ the second NMOS tube, the first ~ six PMOS, the first ~ the second operational amplifier, the first ~ the second current source and variable resistor;
Wherein, described the first ~ the second PMOS, described first NMOS tube and described first current source are connected between VDD-to-VSS successively, and the grid end of described first PMOS connects the drain terminal of described first NMOS tube; Described three ~ four PMOS, described second NMOS tube and described second current source are connected between VDD-to-VSS successively, and the grid end of described 3rd PMOS connects the drain terminal of described second NMOS tube; The source that the source termination power of described 5th PMOS, grid end connect the grid end of described 3rd PMOS, drain terminal connects described 6th PMOS, the drain terminal of described 6th PMOS is as the output terminal of described current field Gamma correction module; The grid end of described second PMOS, described 4th PMOS and described 6th PMOS connects a bias voltage; The grid end of described first NMOS tube connects the output terminal of described first operational amplifier, the source that in-phase input end connects the first reference voltage, inverting input connects described first NMOS tube of described first operational amplifier; The grid end of described second NMOS tube connects the output terminal of described second operational amplifier, the source that in-phase input end connects the output signal of described linear number analog conversion circuit, inverting input connects described second NMOS tube of described second operational amplifier; Be connected with described variable resistor between the source of described first NMOS tube and described second NMOS tube, described variable resistor controls by the output signal of described linear number analog conversion circuit.
More preferably, described variable resistor comprises resistance string, multiple switch, voltage comparator; Wherein said resistance series winding is connected between the source of described first NMOS tube and described second metal-oxide-semiconductor, the two ends of each switch in parallel each resistance in described resistance string, described voltage comparator receives the output signal of described linear number weighted-voltage D/A converter and exports the control signal of each switching tube.
More preferably, described current/voltage modular converter comprises the three ~ six NMOS tube, the 3rd operational amplifier and feedback resistance;
Wherein, between the output terminal that described three ~ four NMOS tube is connected on described current field Gamma correction module successively and ground, the grid end of described 3rd NMOS tube is connected with drain terminal, and the grid end of described 4th NMOS tube is connected with drain terminal; The source ground connection of described 6th NMOS tube, drain terminal connect the source of described 5th NMOS tube, and the grid end of described 6th NMOS tube connects the grid end of described 4th NMOS tube, and the grid end of described 5th NMOS tube connects the grid end of described 3rd NMOS tube; The drain terminal of described 5th NMOS tube connects the inverting input of described 3rd operational amplifier, the in-phase input end of described 3rd operational amplifier connects the second reference voltage, and the output terminal of described 3rd operational amplifier is connected to the inverting input of described 3rd operational amplifier by described feedback resistance.
For achieving the above object and other relevant objects, the invention provides a kind of AMOLED row driving method, described AMOLED row driving method at least comprises:
Digital signal is converted to simulating signal, carries out Gamma correction to described simulating signal, the simulating signal after then being corrected by Gamma is input in OLED pel array, to drive described OLED pel array luminous.
Preferably, the step of described simulating signal being carried out to Gamma correction comprises: corrected by the Gamma regulating variable-resistance resistance to realize in current field, current conversion after being corrected by Gamma is voltage, to obtain the signal after Gamma corrects that can be directly used in described OLED pel array.
More preferably, the expression formula of the simulating signal after Gamma correction is:
Wherein, V
cONSTANT, k is constant, V
rEFbe the first reference voltage, R
vARfor described variable-resistance resistance, V
dACfor the simulating signal exported after digital-to-analog conversion.
As mentioned above, AMOLED column drive circuit of the present invention and driving method thereof, have following beneficial effect:
AMOLED column drive circuit of the present invention and driving method thereof have the output stage of Gamma calibration function by design, linear DAC is used in AMOLED column drive circuit and does not produce loss of significance, without the need to carrying out complicated coupling work to resistance string during employing resistance string DAC, reduce the design difficulty to DAC, the DAC that circulation DAC homalographic is less can be adopted simultaneously, thus reduce the entire area of circuit further, advantages such as there is simplicity of design, area is little, precision is high, image display effect is good.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of AMOLED column drive circuit of the present invention and OLED pel array.
Fig. 2 is shown as the structural representation that Gamma of the present invention corrects output-stage circuit.
Fig. 3 is shown as variable-resistance structural representation of the present invention.
Fig. 4 is shown as and realizes the input-output curve schematic diagram that three sections of piecewise linear Gamma correct output-stage circuit.
Element numbers explanation
1AMOLED column drive circuit
11 input stage circuits
12 linear number analog conversion circuits
13Gamma corrects output-stage circuit
131 current field Gamma correction modules
132 current/voltage modular converters
14 clock control signals produce circuit
15 biasing circuits
2OLED pel array
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this instructions can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this instructions also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 ~ Fig. 4.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Figure 1, the invention provides a kind of AMOLED column drive circuit 1, described AMOLED column drive circuit 1 at least comprises:
Input stage circuit 11, linear number analog conversion circuit 12, Gamma correct output-stage circuit 13, clock control signal produces circuit 14 and biasing circuit 15.
Particularly, as shown in Figure 1, described input stage circuit 11 receives the digital signal of input, to being transported to described linear number analog conversion circuit 12 after described digital signal processing.In the present embodiment, described input stage circuit 11 comprises register, latch cicuit and level shifting circuit, outputs to described linear number analog conversion circuit 12 after carrying out buffer memory, level conversion to described digital signal.
Particularly, as shown in Figure 1, described linear number analog conversion circuit 12 is connected to the output terminal of described input stage circuit 11, receives the digital signal that described input stage circuit 11 exports, and exports after digital signal is converted to simulating signal.In the present embodiment, the output terminal of described input stage circuit 11 connects multiple linear number analog conversion circuit 12, to export multichannel signal driving OLED pel array 2.Described linear number analog conversion circuit 12 can be the D/A converting circuit of period analog conversion circuit, resistance string D/A converting circuit or other arbitrary structures, in the present embodiment, in order to reduce the entire area of circuit, described linear number analog conversion circuit 12 adopts period analog conversion circuit.If described linear number analog conversion circuit 12 adopts resistance string D/A converting circuit, then without the need to carrying out complicated coupling work to resistance string, reduce design difficulty.
Particularly, as shown in Figure 1, described Gamma corrects the output terminal that output-stage circuit 13 is connected to described linear number analog conversion circuit 12, Gamma correction is carried out to the simulating signal that described linear number analog conversion circuit 12 exports, and the signal after correcting is outputted to described OLED pel array 2, to drive described OLED pel array 2 luminous.
As shown in Figure 2, described Gamma correction output-stage circuit 13 comprises current field Gamma correction module 131 and current/voltage modular converter 132.
Described current field Gamma correction module 131 receives the output signal of described linear number analog conversion circuit 12, and carries out exporting corresponding current signal after Gamma corrects to the output signal of described linear number analog conversion circuit 12.Particularly, as shown in Figure 2, in the present embodiment, described current field Gamma correction module 131 comprises the first NMOS tube MN1, the second NMOS tube MN2, the first PMOS MP1, the second PMOS MP2, the 3rd PMOS MP3, the 4th PMOS MP4, the 5th PMOS MP5, the 6th PMOS MP6, the first operational amplifier B1, the second operational amplifier B2, the first current source Is1, the second current source Is2 and variable resistor R
vAR.Described first PMOS MP1, described second PMOS MP2, described first NMOS tube MN1 and described first current source Is1 are connected between VDD-to-VSS successively, and the grid end of described first PMOS MP1 connects the drain terminal of described first NMOS tube MN1.Described 3rd PMOS MP3, described 4th PMOS MP4, described second NMOS tube MN2 and described second current source Is2 are connected between VDD-to-VSS successively, and the grid end of described 3rd PMOS MP3 connects the drain terminal of described second NMOS tube MN2.The electric current flowing through described first current source Is1 and described second current source Is2 is I
rEF.The source that the source termination power of described 5th PMOS MP5, grid end connect the grid end of described 3rd PMOS MP3, drain terminal connects described 6th PMOS MP6, the drain terminal of described 6th PMOS MP6 is as the output terminal of described current field Gamma correction module 131.The grid end of described second PMOS MP2, described 4th PMOS MP4 and described 6th PMOS MP6 connects a bias voltage Vb.Described first NMOS tube MN1 and described second NMOS tube MN2 forms differential pair, and the grid end of described first NMOS tube MN1 connects the output terminal of described first operational amplifier B1, and the in-phase input end of described first operational amplifier B1 connects the first reference voltage V
rEF, inverting input connects the source of described first NMOS tube MN1.The grid end of described second NMOS tube MN2 connects the output terminal of described second operational amplifier B2, and the in-phase input end of described second operational amplifier B2 connects the output signal V of described linear number analog conversion circuit 12
dAC, inverting input connects the source of described second NMOS tube MN2.Described variable resistor R is connected with between the source of described first NMOS tube MN1 and described second NMOS tube MN2
vAR, described variable resistor R
vARby the output signal V of described linear number analog conversion circuit 12
dACcontrol.
Described variable resistor R
vARmOS thyrite or any type of variable resistor can be adopted, be not limited with the present embodiment.As shown in Figure 3, in the present embodiment, described variable resistor R
vARcomprise resistance string, multiple switch, voltage comparator.Described resistance string comprises the first resistance R1, the second resistance R2 and the 3rd resistance R3 of series connection, described resistance series winding is connected between the source of described first NMOS tube MN1 and described second metal-oxide-semiconductor MN2, first interrupteur SW 1, second switch SW2 and the 3rd interrupteur SW 3 are parallel to the two ends of described first resistance R1, described second resistance R2 and described 3rd resistance R3 respectively, and described voltage comparator receives the output signal V of described linear number weighted-voltage D/A converter 12
dACand exporting the control signal of each switching tube, described voltage comparator is according to the output signal V of described linear number analog conversion circuit 12
dACvalue export the open and-shut mode that three control signals control described first interrupteur SW 1, described second switch SW2 and described 3rd interrupteur SW 3 respectively, described voltage comparator receives the output signal V of described linear number weighted-voltage D/A converter 12
dACin different voltage ranges, branch road between the source of described first NMOS tube MN1 and described second NMOS tube MN2 only exist described first resistance R1, described second resistance R2 and described 3rd resistance R3 one of them, two other resistance is shorted, the resistance of described first resistance R1, described second resistance R2 and described 3rd resistance R3 is different, transformation curve slope in respective bins is different, thus achieves the piecewise nonlinear of transition curve.
Described current/voltage modular converter 132 is connected to the output terminal of described current field Gamma correction module 131, and the current signal that described current field Gamma correction module 131 exports is converted to voltage signal.Particularly, as shown in Figure 2, in the present embodiment, described current/voltage modular converter 132 comprises the 3rd NMOS tube MN3, the 4th NMOS tube MN4, the 5th NMOS tube MN5, the 6th NMOS tube MN6, the 3rd operational amplifier B3 and feedback resistance R
bASE.Between the output terminal that described 3rd NMOS tube MN3, the 4th NMOS tube MN4 are connected on described current field Gamma correction module 131 successively and ground, in the present embodiment, the drain terminal of described 3rd NMOS tube MN3 is connected to the drain terminal of described 6th PMOS MP6, the grid end of described 3rd NMOS tube MN3 is connected with drain terminal, and the grid end of described 4th NMOS tube MN4 is connected with drain terminal.The source ground connection of described 6th NMOS tube MN6, drain terminal connect the source of described 5th NMOS tube MN5, the grid end of described 6th NMOS tube MN6 connects the grid end of described 4th NMOS tube MN4, and the grid end of described 5th NMOS tube MN5 connects the grid end of described 3rd NMOS tube MN3.The drain terminal of described 5th NMOS tube MN5 connects the inverting input of described 3rd operational amplifier B3, and the in-phase input end of described 3rd operational amplifier B3 connects the second reference voltage V
bASE, the output terminal of described 3rd operational amplifier B3 is by described feedback resistance R
bASEbe connected to the inverting input of described 3rd operational amplifier B3.
Particularly, as shown in Figure 1, described clock control signal produces circuit 14 for described AMOLED column drive circuit 1 provides clock signal and control signal.In the present embodiment, described clock control signal produces circuit 14 and is connected to the input end that described input stage circuit 11, described linear number analog conversion circuit 12 and described Gamma correct output-stage circuit 13, the clock signal correcting output-stage circuit 13 for providing described input stage circuit 11, described linear number analog conversion circuit 12 and described Gamma and control signal.
Particularly, as shown in Figure 1, described biasing circuit 15 provides reference voltage or reference current for described AMOLED column drive circuit 1.In the present embodiment, described biasing circuit 15 is connected to described linear number analog conversion circuit 12 and described Gamma corrects output-stage circuit 13, for providing bias voltage, reference voltage.
As shown in Figures 1 to 3, the principle of work of above-mentioned AMOLED column drive circuit is as follows:
Digital signal exports to each linear number analog conversion circuit 12 by shift register, latch and level shifting circuit, described linear number analog conversion circuit 12 exports corresponding analog voltage, and the output of described linear number analog conversion circuit 12 corrects the input of output-stage circuit 13 as Gamma.By regulating described variable resistor R
vARresistance realize Gamma in current field and correct, the current conversion after being corrected by Gamma is voltage, to obtain the signal after Gamma corrects that can be directly used in described OLED pel array.Voltage after described Gamma corrects output-stage circuit 13 correction is input to OLED pel array 2, drives described OLED pel array 2 luminous.Biasing circuit 15 provides required reference voltage for module each in driving circuit, and clock control signal produces circuit 14 for modules provides clock signal and control signal.
Particularly, as shown in Figure 2, the source voltage terminal V of the first NMOS tube MN1 described in Fig. 2 and described second NMOS tube MN2 can be obtained as calculated
1and V
2expression formula be:
Wherein, Ad is the difference mode gain of described first operational amplifier B1 and described second operational amplifier B2, and Acm is the common-mode gain of described first operational amplifier B1 and described second operational amplifier B2, V
gS1and V
gS2represent the gate source voltage of described first NMOS tube MN1 and described second NMOS tube MN2 respectively.
Above formula (1) above formula (2) is made difference and can be obtained:
Due to Ad>>Acm, therefore the difference of V1 and V2 can be reduced to:
V
1-V
2≈V
DAC-V
REF(4)
Therefore described variable resistor R is flow through
vARelectric current I
rcan be expressed as:
From above formula, described variable resistor R
vARvary in size, the output signal V of described linear number analog conversion circuit 12
dACwith described variable resistor R
vARelectric current I
rthe slope of relation curve is just different, therefore can by changing described variable resistor R in different input voltage intervals at us
vARvary in size realize the piecewise linearity of input voltage to electric current.
As shown in Figure 2, suppose that the electric current ratio between the current mirror branch that is made up of described 3rd PMOS MP3, described 4th PMOS MP4, described 5th PMOS MP5 and described 6th PMOS MP6 is 1:m, electric current ratio between the current mirror branch be made up of described 3rd NMOS tube MN3, described 4th NMOS tube MN4, described 5th NMOS tube MN5 and described 6th NMOS tube NP6 is 1:n, so will be tied to form vertical just like ShiShimonoseki:
I
out＝nI
2＝mnI
1＝mn(I
REF+I
R)(6)
V
out＝V
BASE+I
OUTR
BASE＝V
BASE+mn(I
REF+I
R)R
BASE(7)
Wherein, I
1for the drain terminal electric current of described second NMOS tube MN2, I
2for the drain terminal electric current of described 6th PMOS MP6, I
oUTfor the drain terminal electric current of described 5th NMOS tube MN5.
Can be calculated further:
Wherein V
cONSTANT=V
bASE+ mnI
rEFr
bASE, k=mnR
bASE, V
cONSTANTconstant is with k.
As shown in Figure 2, by current mirroring circuit and I/V change-over circuit, we establish input voltage V
dACwith output voltage V
oUTbetween relation, by relational expression, we find out, by changing described variable resistor R
vARresistance under different input voltages, can realize V
dACand V
oUTbetween non-linear conversion, thus realize Gamma correct function.
Be illustrated in figure 4 and realize the input-output curve that three sections of piecewise linear Gamma correct output-stage circuit, dotted line is the input-output curve before Gamma corrects, and solid line is the input-output curve after Gamma corrects.Work as V
dACvalue be in interval V respectively
x0~ V
x1, V
x1~ V
x2, V
x2~ V
x3time, corresponding variable-resistance value is respectively R1, R2 and R3, because R1, R2 are different with the resistance of R3, and corresponding V
dACwith V
oUTbetween transformation curve slope also different, thus achieve piecewise linearity Gamma correct function.
As mentioned above, AMOLED column drive circuit of the present invention and driving method thereof, have following beneficial effect:
AMOLED column drive circuit of the present invention and driving method thereof have the output stage of Gamma calibration function by design, linear DAC is used in AMOLED column drive circuit and does not produce loss of significance, without the need to carrying out complicated coupling work to resistance string during employing resistance string DAC, reduce the design difficulty to DAC, the DAC that circulation DAC homalographic is less can be adopted simultaneously, thus reduce the entire area of circuit further, advantages such as there is simplicity of design, area is little, precision is high, image display effect is good.
In sum, a kind of AMOLED column drive circuit of the present invention, comprising: linear number analog conversion circuit, receives digital signal and described digital signal is converted to simulating signal; Gamma corrects output-stage circuit, be connected to the output terminal of described linear number analog conversion circuit, Gamma correction is carried out to the simulating signal that described linear number analog conversion circuit exports, and the signal after correcting is outputted to OLED pel array, to drive described OLED pel array luminous; Clock control signal produces circuit, for described AMOLED column drive circuit provides clock signal and control signal; Biasing circuit, for described AMOLED column drive circuit provides reference voltage or reference current.Digital signal is converted to simulating signal by the present invention, carries out Gamma correction to described simulating signal, and the simulating signal after then being corrected by Gamma is input in OLED pel array, to drive described OLED pel array luminous.AMOLED column drive circuit of the present invention and driving method thereof have the output stage of Gamma calibration function by design, linear DAC is used in AMOLED column drive circuit and does not produce loss of significance, without the need to carrying out complicated coupling work to resistance string during employing resistance string DAC, reduce the design difficulty to DAC, the DAC that circulation DAC homalographic is less can be adopted simultaneously, thus reduce the entire area of circuit further, advantages such as there is simplicity of design, area is little, precision is high, image display effect is good.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. an AMOLED column drive circuit, is characterized in that, described AMOLED column drive circuit at least comprises:
Linear number analog conversion circuit, receives digital signal and described digital signal is converted to simulating signal;
Gamma corrects output-stage circuit, be connected to the output terminal of described linear number analog conversion circuit, Gamma correction is carried out to the simulating signal that described linear number analog conversion circuit exports, and the signal after correcting is outputted to OLED pel array, to drive described OLED pel array luminous;
Clock control signal produces circuit, for described AMOLED column drive circuit provides clock signal and control signal;
Biasing circuit, for described AMOLED column drive circuit provides reference voltage or reference current.
2. AMOLED column drive circuit according to claim 1, it is characterized in that: also comprise the input stage circuit being connected to described linear number analog conversion circuit input end, described input stage circuit comprises one in register, latch cicuit, level shifting circuit or combination, described input stage circuit receives described digital signal, and outputs to described linear number analog conversion circuit to after described digital signal buffer memory, level conversion.
3. AMOLED column drive circuit according to claim 1, is characterized in that: described linear number analog conversion circuit is period analog conversion circuit or resistance string D/A converting circuit.
4. AMOLED column drive circuit according to claim 1, is characterized in that: described Gamma corrects output-stage circuit and comprises current field Gamma correction module and current/voltage modular converter; Described current field Gamma correction module receives the output signal of described linear number analog conversion circuit, and carries out the rear output current signal of Gamma correction to the output signal of described linear number analog conversion circuit; Described current/voltage modular converter is connected to the output terminal of described current field Gamma correction module, and the current signal that described current field Gamma correction module exports is converted to voltage signal.
5. AMOLED column drive circuit according to claim 4, is characterized in that: described current field Gamma correction module comprises the first ~ the second NMOS tube, the first ~ six PMOS, the first ~ the second operational amplifier, the first ~ the second current source and variable resistor;
Wherein, described the first ~ the second PMOS, described first NMOS tube and described first current source are connected between VDD-to-VSS successively, and the grid end of described first PMOS connects the drain terminal of described first NMOS tube; Described three ~ four PMOS, described second NMOS tube and described second current source are connected between VDD-to-VSS successively, and the grid end of described 3rd PMOS connects the drain terminal of described second NMOS tube; The source that the source termination power of described 5th PMOS, grid end connect the grid end of described 3rd PMOS, drain terminal connects described 6th PMOS, the drain terminal of described 6th PMOS is as the output terminal of described current field Gamma correction module; The grid end of described second PMOS, described 4th PMOS and described 6th PMOS connects a bias voltage; The grid end of described first NMOS tube connects the output terminal of described first operational amplifier, the source that in-phase input end connects the first reference voltage, inverting input connects described first NMOS tube of described first operational amplifier; The grid end of described second NMOS tube connects the output terminal of described second operational amplifier, the source that in-phase input end connects the output signal of described linear number analog conversion circuit, inverting input connects described second NMOS tube of described second operational amplifier; Be connected with described variable resistor between the source of described first NMOS tube and described second NMOS tube, described variable resistor controls by the output signal of described linear number analog conversion circuit.
6. AMOLED column drive circuit according to claim 5, is characterized in that: described variable resistor comprises resistance string, multiple switch, voltage comparator; Wherein said resistance series winding is connected between the source of described first NMOS tube and described second metal-oxide-semiconductor, the two ends of each switch in parallel each resistance in described resistance string, described voltage comparator receives the output signal of described linear number weighted-voltage D/A converter and exports the control signal of each switching tube.
7. AMOLED column drive circuit according to claim 4, is characterized in that: described current/voltage modular converter comprises the three ~ six NMOS tube, the 3rd operational amplifier and feedback resistance;
Wherein, between the output terminal that described three ~ four NMOS tube is connected on described current field Gamma correction module successively and ground, the grid end of described 3rd NMOS tube is connected with drain terminal, and the grid end of described 4th NMOS tube is connected with drain terminal; The source ground connection of described 6th NMOS tube, drain terminal connect the source of described 5th NMOS tube, and the grid end of described 6th NMOS tube connects the grid end of described 4th NMOS tube, and the grid end of described 5th NMOS tube connects the grid end of described 3rd NMOS tube; The drain terminal of described 5th NMOS tube connects the inverting input of described 3rd operational amplifier, the in-phase input end of described 3rd operational amplifier connects the second reference voltage, and the output terminal of described 3rd operational amplifier is connected to the inverting input of described 3rd operational amplifier by described feedback resistance.
8. a driving method for the AMOLED column drive circuit as described in claim 1 ~ 7 any one, is characterized in that, described AMOLED row driving method comprises:
Digital signal is converted to simulating signal, carries out Gamma correction to described simulating signal, the simulating signal after then being corrected by Gamma is input in OLED pel array, to drive described OLED pel array luminous.
9. AMOLED row driving method according to claim 8, it is characterized in that: the step of described simulating signal being carried out to Gamma correction comprises: corrected by the Gamma regulating variable-resistance resistance to realize in current field, current conversion after being corrected by Gamma is voltage, to obtain the signal after Gamma corrects that can be directly used in described OLED pel array.
10. AMOLED row driving method according to claim 9, is characterized in that: the expression formula of the simulating signal after Gamma corrects is:
Wherein, V
cONSTANT, k is constant, V
rEFbe the first reference voltage, R
vARfor described variable-resistance resistance, V
dACfor the simulating signal exported after digital-to-analog conversion.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106604522A (en) * | 2016-10-19 | 2017-04-26 | 歌尔科技有限公司 | Device for identifying PCB |
| CN106997752A (en) * | 2016-01-21 | 2017-08-01 | 硅工厂股份有限公司 | Source electrode driver for display device |
| CN108306642A (en) * | 2017-01-13 | 2018-07-20 | 戴洛格半导体公司 | low-power compact voltage sensing circuit |
| EP3584935A4 (en) * | 2017-05-08 | 2020-03-25 | Huawei Technologies Co., Ltd. | Superposed operation circuit and floating-voltage digital-to-analog conversion circuit |
| CN114625207A (en) * | 2022-03-21 | 2022-06-14 | 四川创安微电子有限公司 | DAC circuit and gain adjustment method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1523548A (en) * | 2003-02-20 | 2004-08-25 | ����Sdi��ʽ���� | Image display apparatus |
| CN1697010A (en) * | 2004-05-12 | 2005-11-16 | 索尼株式会社 | Drive circuit for flat display apparatus and flat display apparatus |
| CN1848219A (en) * | 2005-04-13 | 2006-10-18 | 三星Sdi株式会社 | Organic light emitting diode display |
| US20090040212A1 (en) * | 2007-08-07 | 2009-02-12 | Himax Technologies Limited | Driver and driver circuit for pixel circuit |
| CN104575382A (en) * | 2015-01-06 | 2015-04-29 | 昆山国显光电有限公司 | Aging compensation system and method for OLED component |
-
2015
- 2015-09-10 CN CN201510574383.8A patent/CN105139803B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1523548A (en) * | 2003-02-20 | 2004-08-25 | ����Sdi��ʽ���� | Image display apparatus |
| CN1697010A (en) * | 2004-05-12 | 2005-11-16 | 索尼株式会社 | Drive circuit for flat display apparatus and flat display apparatus |
| CN1848219A (en) * | 2005-04-13 | 2006-10-18 | 三星Sdi株式会社 | Organic light emitting diode display |
| US20090040212A1 (en) * | 2007-08-07 | 2009-02-12 | Himax Technologies Limited | Driver and driver circuit for pixel circuit |
| CN104575382A (en) * | 2015-01-06 | 2015-04-29 | 昆山国显光电有限公司 | Aging compensation system and method for OLED component |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106997752A (en) * | 2016-01-21 | 2017-08-01 | 硅工厂股份有限公司 | Source electrode driver for display device |
| CN106604522A (en) * | 2016-10-19 | 2017-04-26 | 歌尔科技有限公司 | Device for identifying PCB |
| CN106604522B (en) * | 2016-10-19 | 2023-10-13 | 歌尔科技有限公司 | Device for marking PCB |
| CN108306642A (en) * | 2017-01-13 | 2018-07-20 | 戴洛格半导体公司 | low-power compact voltage sensing circuit |
| CN108306642B (en) * | 2017-01-13 | 2020-04-07 | 戴洛格半导体公司 | Low power compact voltage sensing circuit |
| EP3584935A4 (en) * | 2017-05-08 | 2020-03-25 | Huawei Technologies Co., Ltd. | Superposed operation circuit and floating-voltage digital-to-analog conversion circuit |
| US10804923B2 (en) | 2017-05-08 | 2020-10-13 | Huawei Technologies Co., Ltd | Superposition operation circuit and float-voltage digital-to-analog conversion circuit |
| CN114625207A (en) * | 2022-03-21 | 2022-06-14 | 四川创安微电子有限公司 | DAC circuit and gain adjustment method thereof |
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