CN105139803B - AMOLED column drive circuits and its driving method - Google Patents
AMOLED column drive circuits and its driving method Download PDFInfo
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- CN105139803B CN105139803B CN201510574383.8A CN201510574383A CN105139803B CN 105139803 B CN105139803 B CN 105139803B CN 201510574383 A CN201510574383 A CN 201510574383A CN 105139803 B CN105139803 B CN 105139803B
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Abstract
The present invention provides a kind of AMOLED column drive circuits, including：Linear D/A converting circuit；Output-stage circuit is corrected to the Gamma that the analog signal that linear D/A converting circuit is exported carries out Gamma corrections, for driving OLED pixel array light-emitting；The clock control signal generation circuit of clock signal and control signal is provided；The biasing circuit of reference voltage is provided.The AMOLED row driving methods of the present invention include：Analog signal is converted digital signals into, Gamma corrections are carried out to analog signal, the analog signal after then Gamma is corrected is input in OLED pixel array, to drive OLED pixel array light-emitting.The linear DAC of the present invention does not produce loss of significance in AMOLED column drive circuits, using that need not carry out complicated matching work during resistance string DAC to resistance string, reduces design difficulty；The less DAC of area can be used simultaneously, so as to further reduce the entire area of circuit, have the advantages that design is simple, area is small, precision is high, image display effect good.
Description
Technical field
The present invention relates to flat panel display technology field, more particularly to a kind of AMOLED column drive circuits and its driving side
Method.
Background technology
In recent years, (Active-matrix organic light-emitting diode, active matrix is organic by AMOLED
Light-emittingdiode) more and more it is used for the equipment such as mobile phone, tablet personal computer, reason is compared with other Display Techniques, and it has
Have the advantages that ultra-thin, wide viewing angle, low-power consumption, fast response time, color are true to nature.AMOLED type of drive mainly has electric current drive
Dynamic, voltage driving and digital drive etc., wherein, the fast response time of voltage driving, and this mode and current main flow
AMLCD shows that actuation techniques are similar, therefore is widely used in AMOLED display drivings.Due to being deposited in AMOLED display fields
The problem of it is in non-linear relation that the luminosity of OLED pixel is with input voltage, so the output electricity of AMOLED column drive circuits
Pressure has to pass through Gamma corrections, so that the color of AMOLED display system details in a play not acted out on stage, but told through dialogues GTG is obviously improved, the color of each GTG is missed
Difference is significantly reduced, and details in a play not acted out on stage, but told through dialogues color detail is clearly demarcated, brightness of image solid colour, saturating good brightness, and contrast is obvious, same size difference screen
TV color is showed it is obvious consistent.
Gamma corrections in AMOLED display system are generally completed in column drive circuit.Prior art is divided into two kinds, one
It is analog domain Gamma corrections to plant, and another is numeric field Gamma corrections.
Analog domain Gamma corrections are main by designing non-linear D/A converter (Digital-to-Analog
Converter, DAC) to realize, the realization of non-linear DAC is the size by adjusting resistance in global resistance string, obtains non-linear
Reference voltage, due to there is the resistance of a large amount of different resistances in global resistance string, it is therefore desirable to spend great effort to go matching
Resistance string, and area consumption is very big, meanwhile, many different reference electricity are usually required in the global resistance string of non-linear DAC
Pressure, which in turns increases the complexity of circuit.
Numeric field Gamma corrections are carried out mainly for linear DAC, and concrete mode is that input data signal is passed through into look-up table
Be mapped in non-linear gamma curve, the data signal obtained after mapping as linear DAC input, in this way
The non-linear conversion between being originally inputted and exporting can be easily realized, the mode of numeric field Gamma corrections simplifies DAC's
Design, and the less linear DAC of some areas can be applied among AMOLED column drive circuits by this mode, reduced and driven
The area of dynamic chip, but linear Gamma corrections there is also some shortcomings, such as this mode is in mapping process to linear
DAC precision has loss, and the lut circuits of containment mapping relation will be generally integrated in column drive circuit, and this will enter one
Step increase chip area.
In summary, the design of analog domain Gamma correcting circuits is complex in the prior art；And numeric field Gamma schools
Positive design is simple, and the less linear DAC of area can be used for into AMOLED column drive circuits, but it can reduce linear DAC
Precision, therefore, how taking into account the area and precision of AMOLED column drive circuits, to have turned into those skilled in the art urgently to be resolved hurrily
One of the problem of.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of AMOLED column drive circuits and
Its driving method, the design for solving analog domain Gamma correcting circuits in the prior art is complex, numeric field Gamma schools
Positive circuit makes the problems such as linear DAC precision is reduced.
In order to achieve the above objects and other related objects, the present invention provides a kind of AMOLED column drive circuits, described
AMOLED column drive circuits at least include：
Linear D/A converting circuit, receives data signal and the data signal is converted into analog signal；
Gamma corrects output-stage circuit, the output end of the linear D/A converting circuit is connected to, to the linear digital-to-analogue
The analog signal of change-over circuit output carries out Gamma corrections, and by the signal output after correction to OLED pixel array, to drive
The OLED pixel array light-emitting；
Clock control signal generation circuit, clock signal and control signal are provided for the AMOLED column drive circuits；
Biasing circuit, reference voltage or reference current are provided for the AMOLED column drive circuits.
Preferably, in addition to it is connected to the input stage circuit of the linear D/A converting circuit input, the input stage
Circuit includes one kind or combination in register, latch cicuit, level shifting circuit, and the input stage circuit receives the numeral
Signal, and to being output to the linear D/A converting circuit after data signal caching, level conversion.
Preferably, the linear D/A converting circuit is circulation D/A converting circuit or resistance string D/A converting circuit.
Preferably, the Gamma corrections output-stage circuit includes current field Gamma correction modules and Current Voltage modulus of conversion
Block；The current field Gamma correction modules receive the output signal of the linear D/A converting circuit, and to the linear digital-to-analogue
The output signal of change-over circuit carries out output current signal after Gamma corrections；The Current Voltage modular converter is connected to described
The output end of current field Gamma correction modules, the current signal that the current field Gamma correction modules are exported is converted to voltage
Signal.
It is highly preferred that the current field Gamma correction modules include the first~the second NMOS tube, the first~the 6th PMOS
Pipe, the first~the second operational amplifier, the first~the second current source and variable resistor；
Wherein, the first~the second PMOS, first NMOS tube and first current source are sequentially connected in series
Between power supply and ground, the grid end of first PMOS connects the drain terminal of first NMOS tube；3rd~the 4th PMOS
Pipe, second NMOS tube and second current source are sequentially connected in series between power supply and ground, the grid of the 3rd PMOS
The drain terminal of end connection second NMOS tube；The source termination power of 5th PMOS, grid end connect the 3rd PMOS
Grid end, drain terminal connect the source of the 6th PMOS, the drain terminal of the 6th PMOS is used as the current field Gamma schools
The output end of positive module；The grid end connection one of second PMOS, the 4th PMOS and the 6th PMOS is inclined
Put voltage；The grid end of first NMOS tube connects the output end of first operational amplifier, first operational amplifier
In-phase input end connect the source that the first reference voltage, inverting input connect first NMOS tube；2nd NMOS
The grid end of pipe connects the output end of second operational amplifier, and the in-phase input end connection of second operational amplifier is described
The output signal of linear D/A converting circuit, inverting input connect the source of second NMOS tube；First NMOS tube
The variable resistor is connected between the source of second NMOS tube, the variable resistor is by the linear digital-to-analogue conversion electricity
The output signal control on road.
It is highly preferred that the variable resistor includes resistance string, multiple switch, voltage comparator；Wherein described resistance string connects
Between the source for being connected to first NMOS tube and second metal-oxide-semiconductor, each switch in parallel each resistance in the resistance string
Two ends, the voltage comparator receives the output signal of the linear digital analog converter and exports the control signal of each switching tube.
It is highly preferred that the Current Voltage modular converter include the 3rd~the 6th NMOS tube, the 3rd operational amplifier and
Feedback resistance；
Wherein, the 3rd~the 4th NMOS tube be sequentially connected in series the current field Gamma correction modules output end and
Between ground, the grid end of the 3rd NMOS tube is connected with drain terminal, and the grid end of the 4th NMOS tube is connected with drain terminal；Described 6th
The source ground connection of NMOS tube, drain terminal connect the source of the 5th NMOS tube, the grid end connection of the 6th NMOS tube described the
The grid end of four NMOS tubes, the grid end of the 5th NMOS tube connects the grid end of the 3rd NMOS tube；5th NMOS tube
Drain terminal connects the inverting input of the 3rd operational amplifier, the in-phase input end connection second of the 3rd operational amplifier
Reference voltage, the output end of the 3rd operational amplifier is connected to the 3rd operational amplifier by the feedback resistance
Inverting input.
In order to achieve the above objects and other related objects, the present invention provides a kind of AMOLED row driving method, described
AMOLED row driving methods at least include：
Analog signal is converted digital signals into, Gamma corrections are carried out to the analog signal, then Gamma are corrected
Analog signal afterwards is input in OLED pixel array, to drive the OLED pixel array light-emitting.
Preferably, the step of carrying out Gamma corrections to the analog signal includes：By adjust the resistance of variable resistor come
The Gamma corrections in current field are realized, the electric current after Gamma is corrected is converted into voltage, can be directly used for acquisition described
Signal after being corrected through Gamma of OLED pixel array.
It is highly preferred that the expression formula of the analog signal after Gamma corrections is：
Wherein, VCONSTANT, k be constant, VREFFor the first reference voltage, RVARFor the resistance of the variable resistor, VDACFor number
The analog signal exported after mould conversion.
As described above, the AMOLED column drive circuits and its driving method of the present invention, have the advantages that：
The AMOLED column drive circuits and its driving method of the present invention is by designing the output with Gamma calibration functions
Level so that linear DAC is used in AMOLED column drive circuits and does not produce loss of significance, using during resistance string DAC without to resistance
String carries out complicated matching work, reduces the design difficulty to DAC, while can be less using circulation DAC homalographics
DAC, so as to further reduce the entire area of circuit, with design is simple, area is small, precision is high, image display effect is good etc.
Advantage.
Brief description of the drawings
Fig. 1 is shown as the AMOLED column drive circuits of the present invention and the structural representation of OLED pixel array.
Fig. 2 is shown as the structural representation of the Gamma correction output-stage circuits of the present invention.
Fig. 3 is shown as the structural representation of the variable resistor of the present invention.
Fig. 4 is shown as realizing that the Gamma of three sections of piecewise linearities corrects the input-output curve schematic diagram of output-stage circuit.
Component label instructions
1 AMOLED column drive circuits
11 input stage circuits
12 linear D/A converting circuits
13 Gamma correct output-stage circuit
131 current field Gamma correction modules
132 Current Voltage modular converters
14 clock control signal generation circuits
15 biasing circuits
2 OLED pixel arrays
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to Fig. 1~Fig. 4.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, then in schema only display with relevant component in the present invention rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
As shown in figure 1, the present invention provides a kind of AMOLED column drive circuits 1, the AMOLED column drive circuits 1 are at least wrapped
Include：
Input stage circuit 11, linear D/A converting circuit 12, Gamma corrections output-stage circuit 13, clock control signal production
Raw circuit 14 and biasing circuit 15.
Specifically, as shown in figure 1, the input stage circuit 11 receives the data signal of input, at the data signal
The linear D/A converting circuit 12 is transported to after reason.In the present embodiment, the input stage circuit 11 includes register, latched
Circuit and level shifting circuit, are cached to the data signal, are output to the linear digital-to-analogue conversion after level conversion
Circuit 12.
Specifically, as shown in figure 1, the linear D/A converting circuit 12 is connected to the output of the input stage circuit 11
End, receives the data signal that the input stage circuit 11 is exported, and convert digital signals into output after analog signal.In this reality
Apply in example, the output end of the input stage circuit 11 connects multiple linear D/A converting circuits 12, to export the signal of multichannel
Drive OLED pixel array 2.The linear D/A converting circuit 12 can be circulation D/A converting circuit, resistance string digital-to-analogue conversion
The D/A converting circuit of circuit or other arbitrary structures, it is in the present embodiment, described linear in order to reduce the entire area of circuit
D/A converting circuit 12 is using circulation D/A converting circuit.If the linear D/A converting circuit 12 uses resistance string digital-to-analogue conversion
Circuit, then without carrying out complicated matching work to resistance string, reduce design difficulty.
Specifically, as shown in figure 1, Gamma correction output-stage circuits 13 are connected to the linear D/A converting circuit
12 output end, carries out Gamma corrections to the analog signal that the linear D/A converting circuit 12 is exported, and by the letter after correction
Number the OLED pixel array 2 is output to, to drive the OLED pixel array 2 to light.
As shown in Fig. 2 the Gamma corrections output-stage circuit 13 includes current field Gamma correction modules 131 and electric current electricity
Press modular converter 132.
The current field Gamma correction modules 131 receive the output signal of the linear D/A converting circuit 12, and to institute
Corresponding current signal is exported after the output signal progress Gamma corrections for stating linear D/A converting circuit 12.Specifically, such as Fig. 2
It is shown, in the present embodiment, the current field Gamma correction modules 131 include the first NMOS tube MN1, the second NMOS tube MN2,
First PMOS MP1, the second PMOS MP2, the 3rd PMOS MP3, the 4th PMOS MP4, the 5th PMOS MP5, the 6th
PMOS MP6, the first operational amplifier B1, the second operational amplifier B2, the first current source Is1, the second current source Is2 and can
Become resistance RVAR.The first PMOS MP1, the second PMOS MP2, the first NMOS tube MN1 and first electricity
Stream source Is1 is sequentially connected in series between power supply and ground, and the grid end of the first PMOS MP1 connects the first NMOS tube MN1's
Drain terminal.The 3rd PMOS MP3, the 4th PMOS MP4, the second NMOS tube MN2 and second current source
Is2 is sequentially connected in series between power supply and ground, and the grid end of the 3rd PMOS MP3 connects the drain terminal of the second NMOS tube MN2.
The electric current for flowing through the first current source Is1 and the second current source Is2 is IREF.The source of the 5th PMOS MP5
Connect power supply, grid end and connect the source that the grid end of the 3rd PMOS MP3, drain terminal connect the 6th PMOS MP6, described the
Six PMOS MP6 drain terminal as the current field Gamma correction modules 131 output end.The second PMOS MP2, institute
The grid end for stating the 4th PMOS MP4 and the 6th PMOS MP6 connects a bias voltage Vb.The first NMOS tube MN1
With the second NMOS tube MN2 formation differential pairs, the grid end of the first NMOS tube MN1 connects the first operational amplifier B1
Output end, the in-phase input end of the first operational amplifier B1 connects the first reference voltage VREF, inverting input connection institute
State the first NMOS tube MN1 source.The grid end of the second NMOS tube MN2 connects the output of the second operational amplifier B2
End, the in-phase input end of the second operational amplifier B2 connects the output signal V of the linear D/A converting circuit 12DAC, it is anti-
Phase input connects the source of the second NMOS tube MN2.The first NMOS tube MN1 and the second NMOS tube MN2 source
The variable resistor R is connected between endVAR, the variable resistor RVARBy the output signal of the linear D/A converting circuit 12
VDACControl.
The variable resistor RVARCan use MOS thyrites or any type of variable resistor, not using the present embodiment as
Limit.As shown in figure 3, in the present embodiment, the variable resistor RVARIncluding resistance string, multiple switch, voltage comparator.It is described
Resistance string includes first resistor R1, the second resistance R2 and 3rd resistor R3 of series connection, and the resistance string is connected to described first
Between NMOS tube MN1 and the second metal-oxide-semiconductor MN2 source, first switch SW1, second switch SW2 and the 3rd switch SW3
Be parallel to the first resistor R1, the second resistance R2 and the 3rd resistor R3 two ends respectively, the voltage ratio compared with
Device receives the output signal V of the linear digital analog converter 12DACAnd export the control signal of each switching tube, the voltage ratio compared with
Device is according to the output signal V of the linear D/A converting circuit 12DACValue export three control signals control described first respectively
SW1, the second switch SW2 and the 3rd switch SW3 open and-shut mode are switched, the voltage comparator receives the line
The output signal V of property digital analog converter 12DACIn different voltage ranges, the first NMOS tube MN1 and the 2nd NMOS
Branch road between pipe MN2 source only exist the first resistor R1, the second resistance R2 and the 3rd resistor R3 its
One of, two other resistance is short-circuited, the first resistor R1, the second resistance R2 and the 3rd resistor R3 resistance
Value is different, and the conversion curve slope in respective bins is different, it is achieved thereby that the piecewise nonlinear of transfer curve.
The Current Voltage modular converter 132 is connected to the output end of the current field Gamma correction modules 131, by institute
The current signal for stating the output of current field Gamma correction modules 131 is converted to voltage signal.Specifically, as shown in Fig. 2 in this reality
Apply in example, the Current Voltage modular converter 132 include the 3rd NMOS tube MN3, the 4th NMOS tube MN4, the 5th NMOS tube MN5,
6th NMOS tube MN6, the 3rd operational amplifier B3 and feedback resistance RBASE.The 3rd NMOS tube MN3, the 4th NMOS tube
MN4 is sequentially connected in series between the output end and ground of the current field Gamma correction modules 131, in the present embodiment, and the described 3rd
NMOS tube MN3 drain terminal is connected to the drain terminal of the 6th PMOS MP6, the grid end and drain terminal phase of the 3rd NMOS tube MN3
Even, the grid end of the 4th NMOS tube MN4 is connected with drain terminal.The source ground connection of the 6th NMOS tube MN6, drain terminal connection are described
5th NMOS tube MN5 source, the grid end of the 6th NMOS tube MN6 connects the grid end of the 4th NMOS tube MN4, and described the
Five NMOS tube MN5 grid end connects the grid end of the 3rd NMOS tube MN3.The drain terminal connection of the 5th NMOS tube MN5 is described
3rd operational amplifier B3 inverting input, the in-phase input end of the 3rd operational amplifier B3 connects the second reference voltage
VBASE, the output end of the 3rd operational amplifier B3 passes through the feedback resistance RBASEIt is connected to the 3rd operational amplifier
B3 inverting input.
Specifically, as shown in figure 1, the clock control signal generation circuit 14 carries for the AMOLED column drive circuits 1
For clock signal and control signal.In the present embodiment, the clock control signal generation circuit 14 is connected to the input stage
Circuit 11, the linear D/A converting circuit 12 and the Gamma correct the input of output-stage circuit 13, for providing
State input stage circuit 11, the linear D/A converting circuit 12 and the Gamma and correct the clock signal of output-stage circuit 13
And control signal.
Specifically, as shown in figure 1, the biasing circuit 15 be the AMOLED column drive circuits 1 provide reference voltage or
Reference current.In the present embodiment, the biasing circuit 15 is connected to the linear D/A converting circuit 12 and the Gamma schools
Positive output level circuit 13, for providing bias voltage, reference voltage.
As shown in Figures 1 to 3, the operation principle of above-mentioned AMOLED column drive circuits is as follows：
Data signal is exported by shift register, latch and level shifting circuit and gives each linear D/A converting circuit
12, the linear D/A converting circuit 12 exports corresponding analog voltage, and the output of the linear D/A converting circuit 12 is made
The input of output-stage circuit 13 is corrected for Gamma.By adjusting the variable resistor RVARResistance realize in current field
Gamma is corrected, and the electric current after Gamma is corrected is converted into voltage, to obtain the warp that can be directly used for the OLED pixel array
Signal after Gamma corrections.Control source after the Gamma corrections correction of output-stage circuit 13 is driven to OLED pixel array 2
The OLED pixel array 2 is moved to light.Biasing circuit 15 provides required reference voltage, clock for each module in drive circuit
Control signal generation circuit 14 provides clock signal and control signal for modules.
Specifically, as shown in Fig. 2 being computed obtaining the first NMOS tube MN1 described in Fig. 2 and the second NMOS tube MN2
Source voltage terminal V1And V2Expression formula be：
Wherein, Ad is the first operational amplifier B1 and the second operational amplifier B2 difference mode gain, and Acm is institute
State the first operational amplifier B1 and the second operational amplifier B2 common-mode gain, VGS1And VGS2Described first is represented respectively
NMOS tube MN1 and the second NMOS tube MN2 gate source voltage.
Above formula (1) above formula (2), which makees difference, to be obtained：
Due to Ad>>Acm, therefore V1 and V2 difference can be reduced to：
V1-V2≈VDAC-VREF (4)
Therefore the variable resistor R is flowed throughVARElectric current IRIt can be expressed as：
From above formula, the variable resistor RVAROf different sizes, the output signal of the linear D/A converting circuit 12
VDACWith the variable resistor RVARElectric current IRThe slope of relation curve is just different, therefore can be different by changing at us
The variable resistor R in input voltage is intervalVAROf different sizes realize the input voltage to the piecewise linearity of electric current.
As illustrated in fig. 2, it is assumed that by the 3rd PMOS MP3, the 4th PMOS MP4, the 5th PMOS MP5
And the electric current ratio between the current mirror branch of the 6th PMOS MP6 compositions is 1:M, by the 3rd NMOS tube MN3, described
Electric current between the current mirror branch of 4th NMOS tube MN4, the 5th NMOS tube MN5 and the 6th NMOS tube NP6 compositions
Than for 1:N, then will be tied to form just like ShiShimonoseki vertical：
Iout=nI2=mnI1=mn (IREF+IR) (6)
Vout=VBASE+IOUTRBASE=VBASE+mn(IREF+IR)RBASE (7)
Wherein, I1For the drain terminal electric current of the second NMOS tube MN2, I2For the drain terminal electric current of the 6th PMOS MP6,
IOUTFor the drain terminal electric current of the 5th NMOS tube MN5.
Further it can be calculated：
Wherein VCONSTANT=VBASE+mnIREFRBASE, k=mnRBASE, VCONSTANTIt is constant with k.
As shown in Fig. 2 by current mirroring circuit and I/V change-over circuits, we establish input voltage VDACWith output electricity
Press VOUTBetween relation, by relational expression we have observed that, by changing the variable resistor RVARHindered under different input voltages
Value, it is possible to achieve VDACAnd VOUTBetween non-linear conversion so that realize Gamma correction function.
It is illustrated in figure 4 and realizes that the Gamma of three sections of piecewise linearities corrects the input-output curve of output-stage circuit, dotted line is
Input-output curve before Gamma corrections, solid line is the input-output curve after Gamma is corrected.Work as VDACValue be respectively at area
Between VX0~VX1、VX1~VX2、VX2~VX3When, the value of corresponding variable resistor is respectively R1, R2 and R3, due to R1, R2 and R3
Resistance is different, corresponding VDACWith VOUTBetween conversion curve slope it is also different, it is achieved thereby that piecewise linearity Gamma correction
Function.
As described above, the AMOLED column drive circuits and its driving method of the present invention, have the advantages that：
The AMOLED column drive circuits and its driving method of the present invention is by designing the output with Gamma calibration functions
Level so that linear DAC is used in AMOLED column drive circuits and does not produce loss of significance, using during resistance string DAC without to resistance
String carries out complicated matching work, reduces the design difficulty to DAC, while can be less using circulation DAC homalographics
DAC, so as to further reduce the entire area of circuit, with design is simple, area is small, precision is high, image display effect is good etc.
Advantage.
In summary, a kind of AMOLED column drive circuits of the invention, including：Linear D/A converting circuit, receives numeral letter
Number and the data signal is converted into analog signal；Gamma corrects output-stage circuit, is connected to the linear digital-to-analogue conversion electricity
The output end on road, carries out Gamma corrections to the analog signal of the linear D/A converting circuit output, and by the signal after correction
OLED pixel array is output to, to drive the OLED pixel array light-emitting；Clock control signal generation circuit, is described
AMOLED column drive circuits provide clock signal and control signal；Biasing circuit, base is provided for the AMOLED column drive circuits
Quasi- voltage or reference current.The present invention converts digital signals into analog signal, and Gamma corrections are carried out to the analog signal,
Then the analog signal after Gamma is corrected is input in OLED pixel array, to drive the OLED pixel array light-emitting.This
The AMOLED column drive circuits and its driving method of invention are by designing the output stage with Gamma calibration functions so that linear
DAC is used in AMOLED column drive circuits and does not produce loss of significance, and complexity need not be carried out to resistance string using during resistance string DAC
Work is matched, the design difficulty to DAC is reduced, while can be using the circulation less DAC of DAC homalographics, so that further
Reduce the entire area of circuit, have the advantages that design is simple, area is small, precision is high, image display effect good.So, this hair
It is bright effectively to overcome various shortcoming of the prior art and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (9)
1. a kind of AMOLED column drive circuits, it is characterised in that the AMOLED column drive circuits at least include：
Linear D/A converting circuit, receives data signal and the data signal is converted into analog signal；
Gamma corrects output-stage circuit, the output end of the linear D/A converting circuit is connected to, to the linear digital-to-analogue conversion
The analog signal of circuit output carries out Gamma corrections, and by the signal output after correction to OLED pixel array, described in driving
OLED pixel array light-emitting；Wherein, the Gamma corrections output-stage circuit includes current field Gamma correction modules and electric current electricity
Press modular converter；The current field Gamma correction modules receive the output signal of the linear D/A converting circuit, and to described
The output signal of linear D/A converting circuit carries out output current signal after Gamma corrections；The Current Voltage modular converter connects
The output end of the current field Gamma correction modules is connected to, the current signal that the current field Gamma correction modules are exported turns
It is changed to voltage signal；
Clock control signal generation circuit, clock signal and control signal are provided for the AMOLED column drive circuits；
Biasing circuit, reference voltage or reference current are provided for the AMOLED column drive circuits.
2. AMOLED column drive circuits according to claim 1, it is characterised in that：Also include being connected to the linear digital-to-analogue
The input stage circuit of change-over circuit input, the input stage circuit is included in register, latch cicuit, level shifting circuit
A kind of or combination, the input stage circuit receives the data signal, and to being exported after data signal caching, level conversion
To the linear D/A converting circuit.
3. AMOLED column drive circuits according to claim 1, it is characterised in that：The linear D/A converting circuit is to follow
Number of rings analog conversion circuit or resistance string D/A converting circuit.
4. AMOLED column drive circuits according to claim 1, it is characterised in that：The current field Gamma correction modules
Including the first~the second NMOS tube, the first~the 6th PMOS, the first~the second operational amplifier, the first~the second current source with
And variable resistor；
Wherein, the first~the second PMOS, first NMOS tube and first current source are sequentially connected in series in power supply
Between ground, the grid end of first PMOS connects the drain terminal of first NMOS tube；3rd~the 4th PMOS, institute
State the second NMOS tube and second current source is sequentially connected in series between power supply and ground, the grid end connection of the 3rd PMOS
The drain terminal of second NMOS tube；The source termination power of 5th PMOS, grid end connect the 3rd PMOS grid end,
Drain terminal connects the source of the 6th PMOS, and the drain terminal of the 6th PMOS is used as the current field Gamma correction modules
Output end；The grid end of second PMOS, the 4th PMOS and the 6th PMOS connects a bias voltage；
The grid end of first NMOS tube connects the output end of first operational amplifier, first operational amplifier it is same mutually defeated
Enter the source that the first reference voltage of end connection, inverting input connect first NMOS tube；The grid end of second NMOS tube
The output end of second operational amplifier is connected, the in-phase input end of second operational amplifier connects the linear digital-to-analogue
The output signal of change-over circuit, inverting input connect the source of second NMOS tube；First NMOS tube and described the
The variable resistor is connected between the source of two NMOS tubes, the variable resistor is exported by the linear D/A converting circuit
Signal is controlled.
5. AMOLED column drive circuits according to claim 4, it is characterised in that：The variable resistor include resistance string,
Multiple switch, voltage comparator；Wherein described resistance string is connected to the source of first NMOS tube and second NMOS tube
Between, the two ends of each switch in parallel each resistance in the resistance string, the voltage comparator receives the linear digital-to-analogue conversion
The output signal and output control signal of device.
6. AMOLED column drive circuits according to claim 1, it is characterised in that：The Current Voltage modular converter includes
3rd~the 6th NMOS tube, the 3rd operational amplifier and feedback resistance；
Wherein, the 3rd~the 4th NMOS tube is sequentially connected in series output end and ground in the current field Gamma correction modules
Between, the grid end of the 3rd NMOS tube is connected with drain terminal, and the grid end of the 4th NMOS tube is connected with drain terminal；6th NMOS
The source ground connection of pipe, drain terminal connect the source of the 5th NMOS tube, the grid end connection the described 4th of the 6th NMOS tube
The grid end of NMOS tube, the grid end of the 5th NMOS tube connects the grid end of the 3rd NMOS tube；The leakage of 5th NMOS tube
The inverting input of end connection the 3rd operational amplifier, the in-phase input end connection second of the 3rd operational amplifier is joined
Voltage is examined, the output end of the 3rd operational amplifier is connected to the anti-of the 3rd operational amplifier by the feedback resistance
Phase input.
7. a kind of driving method of AMOLED column drive circuits as described in claim 1~6 any one, it is characterised in that
The driving method of the AMOLED column drive circuits includes：
Analog signal is converted digital signals into, Gamma corrections are carried out to the analog signal, after then Gamma is corrected
Analog signal is input in OLED pixel array, to drive the OLED pixel array light-emitting.
8. the driving method of AMOLED column drive circuits according to claim 7, it is characterised in that：To the analog signal
The step of carrying out Gamma corrections includes：Realize that the Gamma in current field is corrected by adjusting the resistance of variable resistor, will
Electric current after Gamma corrections is converted into voltage, with after obtaining and can be directly used for being corrected through Gamma of the OLED pixel array
Signal.
9. the driving method of AMOLED column drive circuits according to claim 8, it is characterised in that：After Gamma corrections
The expression formula of analog signal is：
Wherein, VCONSTANT, k be constant, VREFFor the first reference voltage, RVARFor the resistance of the variable resistor, VDACTurn for digital-to-analogue
The analog signal exported after changing.
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| KR102694705B1 (en) * | 2016-01-21 | 2024-08-13 | 주식회사 엘엑스세미콘 | Source driver for display apparatus |
| CN106604522B (en) * | 2016-10-19 | 2023-10-13 | 歌尔科技有限公司 | Device for marking PCB |
| US10281505B2 (en) * | 2017-01-13 | 2019-05-07 | Dialog Semiconductor Inc. | Low-power and compact voltage sensing circuit |
| CN107425845B (en) | 2017-05-08 | 2020-12-25 | 华为技术有限公司 | Superposition operation circuit and floating voltage digital-to-analog conversion circuit |
| CN111913020A (en) * | 2020-08-19 | 2020-11-10 | 北京无线电计量测试研究所 | Low-noise bias source for quantum alternating-current voltage system and using method |
| CN114625207A (en) * | 2022-03-21 | 2022-06-14 | 四川创安微电子有限公司 | DAC circuit and gain adjustment method thereof |
| CN117278043B (en) * | 2023-10-19 | 2024-05-24 | 无锡芯光互连技术研究院有限公司 | Digital-to-analog conversion circuit with large current driving adjustable output voltage range |
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| JP4264580B2 (en) * | 2004-05-12 | 2009-05-20 | ソニー株式会社 | Flat display device drive circuit and flat display device |
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