CN105118789B - A kind of low temperature bonding processes of thyristor chip - Google Patents
A kind of low temperature bonding processes of thyristor chip Download PDFInfo
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- CN105118789B CN105118789B CN201510430034.9A CN201510430034A CN105118789B CN 105118789 B CN105118789 B CN 105118789B CN 201510430034 A CN201510430034 A CN 201510430034A CN 105118789 B CN105118789 B CN 105118789B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
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Abstract
The invention discloses a kind of low temperature bonding processes of thyristor chip, it first takes monocrystalline silicon piece, alusil alloy piece, molybdenum sheet；Then the deformation that default deformation quantity is produced at the center of molybdenum sheet is made；Then the molybdenum sheet of monocrystalline silicon piece, alusil alloy piece and deformation is sequentially placed into graphite jig, the concave surface face alusil alloy piece of the molybdenum sheet of deformation is required when being put into；Graphite jig is put into high-temperature vacuum furnace again, melts alusil alloy piece, monocrystalline silicon piece is attached to the thyristor chip that intimate plane is formed on molybdenum sheet；Advantage is that aluminium flake is changed to alusil alloy piece, and the fusing point of alusil alloy piece is lower, therefore combination temperature can be reduced to 580~600 DEG C, so as to the deformation of the thyristor chip reduced；Molybdenum sheet center is set to produce the deformation of default deformation quantity in advance, so cancel each other with reference to the thermal expansion deformation that rear molybdenum sheet produces with the deformation suppressed in advance, so that the intimate plane of the thyristor chip finally obtained, silicon chip is pressed down the possibility split when can greatly reduce installation.
Description
Technical field
The present invention relates to a kind of technology of preparing of thyristor chip, more particularly, to a kind of low temperature bond of thyristor chip
Method.
Background technology
With commercial power force transformation and control device（Power electronic equipment）Develop towards the direction of super high power, it is desirable to
The power conversion capability of the power electronic element of core can be lifted at double the most in power converter and control device, and this certainty
It is required that power electronic chip ever-larger diameters, super-large diameter.At present, the maximum gauge of single thyristor chip is up to 3~6 English
It is very little.Thyristor chip generally by the silicon chip machined, by metal-to-metal adhesive, under high temperature and high vacuum condition, is adhered to
The closest refractory metal of the coefficient of expansion（The Mo wafer of plane）On, provided by Mo wafer for thyristor chip conductive, scattered
Heat, structural support and protection etc..
At present, the associated methods of thyristor chip comprise the following steps that：1）As shown in Figure 1, by the silicon chip of high flatness,
Aluminium flake, the molybdenum sheet of high-purity as metal-to-metal adhesive, by the order of silicon-aluminium-molybdenum, are sequentially loaded into semienclosed cylindrical shape stone
In black mould, that is, open-topped cylindrical shape graphite jig；2）Cylindrical shape graphite jig equipped with silicon chip, aluminium flake, molybdenum sheet is put into
In high-temperature vacuum furnace, it is higher than 3 × 10 in vacuum-3Pa, and temperature melts aluminium flake under conditions of 700~800 DEG C, silicon chip
It is attached to by aluminium flake on molybdenum sheet, forms thyristor chip, Fig. 2 is to combine obtained thyristor chip.This associated methods are deposited
In problems with：1）Since the thermal linear expansion coefficient of monocrystalline silicon is 2.5 × 10-6/ DEG C, the thermal linear expansion coefficient of metal molybdenum is
5.2×10-6/ DEG C, therefore when the temperature of silicon chip and molybdenum sheet is finally cooled to room temperature from 700~800 DEG C when combining, molybdenum sheet is opposite
In silicon chip to shrink, silicon chip is expansion relative to molybdenum sheet, can produce deformation between them, as shown in Figure 2；And when high temperature bond
When temperature is higher, the diameter of thyristor chip is bigger, deformation is bigger, the deformation at the center of 3~6 inches of thyristor chip
Amount is generally at 40~400 μm；2）Using the thyristor chip that this associated methods obtain when installing and using, the installation born
Pressure is 10~150KN, and at this pressure, the thyristor chip of deformation is driven plain, but the silicon chip in thyristor chip produces change
Shape stress, when deforming larger or long-time service, silicon chip is easy to be broken, and the use that this will seriously affect thyristor chip is reliable
Property；3）Semienclosed cylindrical shape graphite jig used in this associated methods has heat safe characteristic, for thyristor
The high temperature bond of chip, but due to the poor thermal conductivity of graphite, the thyristor chip and vacuum high-temperature in graphite jig can be made
The temperature of the burner hearth of stove produces the temperature difference, so as to will influence to combine precision and uniformity, easily makes in being bonded in of silicon chip and molybdenum sheet
The cavity of Poor cohesion is formed at the heart, most influences the electric conductivity and heat dissipation performance of thyristor chip at last.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of low temperature bonding processes of thyristor chip, are obtained using it
The intimate plane of thyristor chip, considerably reduce silicon chip when thyristor chip is installed and used and be pressed down the possibility split.
Technical solution is used by the present invention solves above-mentioned technical problem：A kind of low temperature bond side of thyristor chip
Method, it is characterised in that include the following steps：
1. choose monocrystalline silicon piece, the alusil alloy piece that silicon content is 9.7%~13.7%, molybdenum sheet, wherein, alusil alloy piece is used
Make metal binding agent；
2. being pre-processed to molybdenum sheet, the center is set to produce the deformation of default deformation quantity；
3. the molybdenum sheet of monocrystalline silicon piece, alusil alloy piece and deformation is sequentially placed into graphite jig, deformation is required when being put into
Molybdenum sheet concave surface face alusil alloy piece；
4. the graphite jig of the molybdenum sheet equipped with monocrystalline silicon piece, alusil alloy piece and deformation is put into high-temperature vacuum furnace,
Vacuum is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 580~600 DEG C, monocrystalline silicon piece is attached to
The thyristor chip of intimate plane is formed on molybdenum sheet.
The step 2. in molybdenum sheet is pre-processed as the mould using dimpling to molybdenum sheet carry out punching press；It is this pre-
Processing mode is simple and reliable.
The step 2. in preset deformation quantity determination process be：
2. -1, choose with step 1. in identical monocrystalline silicon piece, alusil alloy piece and molybdenum sheet；
2. -2, monocrystalline silicon piece, alusil alloy piece and molybdenum sheet are sequentially placed into graphite jig；
2. -3, the graphite jig equipped with monocrystalline silicon piece, alusil alloy piece and molybdenum sheet is put into high-temperature vacuum furnace, in vacuum
Degree is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 580~600 DEG C, monocrystalline silicon piece is attached to molybdenum sheet
The upper thyristor chip for forming deformation；
2. -4, using the deformation quantity at the center of the thyristor chip of deformation as default deformation quantity.Here, in identical environment
It is lower to determine default deformation quantity, it may be such that the thermal expansion deformation produced with reference to rear molybdenum sheet cancels each other with the deformation suppressed in advance, from
And cause the intimate plane of thyristor chip finally obtained.
Offered on four side walls of the graphite jig for increasing heat conduction, reducing the graphite jig
The lateral through aperture of internal-external temperature difference.
The step 1. middle alusil alloy piece silicon content be 11.7%.
The step 4. middle temperature condition be 580~590 DEG C.
Compared with prior art, the advantage of the invention is that：
1）Closed since the aluminium flake of high-purity that original work are metal binding agent is changed to the aluminium silicon that silicon content is 9.7%~13.7%
Gold plaque, and the fusing point of alusil alloy piece is lower, if the fusing point for the alusil alloy piece that silicon content is 11.7% is only 577 DEG C, therefore energy
Enough that combination temperature is reduced to 580~600 DEG C from original 700~800 DEG C, the reduction of combination temperature can greatly reduce knot
Close the deformation of obtained thyristor chip.
2）Molybdenum sheet is pre-processed in advance, the center is produced the deformation of default deformation quantity, 3 are obtained if wanting to combine
~6 inches of thyristor chip, then it is 28~280 μm that can make the deformation quantity at the center of molybdenum sheet in advance, and makes the molybdenum sheet of deformation
Concave surface face alusil alloy piece, so with reference to rear molybdenum sheet produce thermal expansion deformation cancel each other with the deformation suppressed in advance,
So that the intimate plane of the thyristor chip finally obtained, the thyristor chip of intimate plane can greatly reduce its installation
Silicon chip is pressed down the possibility split during use.
3）Lateral through aperture is set on each side wall of graphite jig, and the graphite jig of side wall hollow out can increase heat biography
Lead, reduce the internal-external temperature difference of graphite jig, the precision and uniformity of combination temperature can be effectively improved, so as to effectively
Avoid producing the cavity of Poor cohesion.
Brief description of the drawings
Fig. 1 places silicon chip, aluminium flake, the schematic diagram of molybdenum sheet for existing associated methods；
Fig. 2 is the structure diagram of the thyristor chip obtained using existing associated methods；
Fig. 3 places monocrystalline silicon piece, alusil alloy piece, the schematic diagram of molybdenum sheet for the method for the present invention；
Fig. 4 is the structure diagram of the thyristor chip obtained using the method for the present invention.
Embodiment
The present invention is described in further detail below in conjunction with attached drawing embodiment.
Embodiment one：
A kind of low temperature bonding processes for thyristor chip that the present embodiment proposes, it includes the following steps：
1. choose the monocrystalline silicon piece of high flatness, the alusil alloy piece that silicon content is 11.7%, molybdenum sheet, wherein, alusil alloy
Piece is used as metal binding agent.
Punching press is carried out to molybdenum sheet as the mould using dimpling 2. being pre-processed to molybdenum sheet, produces the center default
The deformation of deformation quantity.
Here, the determination process of default deformation quantity is：
2. -1, choose with step 1. in identical monocrystalline silicon piece, alusil alloy piece and molybdenum sheet.
2. -2, monocrystalline silicon piece, alusil alloy piece and molybdenum sheet are sequentially placed into graphite jig.
2. -3, the graphite jig equipped with monocrystalline silicon piece, alusil alloy piece and molybdenum sheet is put into high-temperature vacuum furnace, in vacuum
Degree is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 580 DEG C, monocrystalline silicon piece is attached to shape on molybdenum sheet
Into the thyristor chip of deformation, the deformation quantity at the center of 3~6 inches of thyristor chip is 28~280 μm.
2. -4, using the deformation quantity at the center of the thyristor chip of deformation as default deformation quantity.
3. the molybdenum sheet of monocrystalline silicon piece, alusil alloy piece and deformation is sequentially placed into graphite jig, deformation is required when being put into
Molybdenum sheet concave surface face alusil alloy piece, as shown in Figure 3.
4. the graphite jig of the molybdenum sheet equipped with monocrystalline silicon piece, alusil alloy piece and deformation is put into high-temperature vacuum furnace,
Vacuum is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 580 DEG C, monocrystalline silicon piece is attached to molybdenum sheet
The upper thyristor chip for forming intimate plane, as shown in Figure 4.
In the present embodiment, in order to be sufficiently accurate it may be desired to step 2. the vacuum in -3 and step 4. in vacuum it is consistent, step 2. -3
With step 4. in vacuum it is the smaller the better.
Embodiment two：
A kind of low temperature bonding processes for thyristor chip that the present embodiment proposes, it includes the following steps：
1. choose the monocrystalline silicon piece of high flatness, the alusil alloy piece that silicon content is 9.7%, molybdenum sheet, wherein, alusil alloy
Piece is used as metal binding agent.
Punching press is carried out to molybdenum sheet as the mould using dimpling 2. being pre-processed to molybdenum sheet, produces the center default
The deformation of deformation quantity.
Here, the determination process of default deformation quantity is：
2. -1, choose with step 1. in identical monocrystalline silicon piece, alusil alloy piece and molybdenum sheet.
2. -2, monocrystalline silicon piece, alusil alloy piece and molybdenum sheet are sequentially placed into graphite jig.
2. -3, the graphite jig equipped with monocrystalline silicon piece, alusil alloy piece and molybdenum sheet is put into high-temperature vacuum furnace, in vacuum
Degree is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 590 DEG C, monocrystalline silicon piece is attached to shape on molybdenum sheet
Into the thyristor chip of deformation, the deformation quantity at the center of 3~6 inches of thyristor chip is 28~280 μm.
2. -4, using the deformation quantity at the center of the thyristor chip of deformation as default deformation quantity.
3. the molybdenum sheet of monocrystalline silicon piece, alusil alloy piece and deformation is sequentially placed into graphite jig, deformation is required when being put into
Molybdenum sheet concave surface face alusil alloy piece, as shown in Figure 3.
4. the graphite jig of the molybdenum sheet equipped with monocrystalline silicon piece, alusil alloy piece and deformation is put into high-temperature vacuum furnace,
Vacuum is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 590 DEG C, monocrystalline silicon piece is attached to molybdenum sheet
The upper thyristor chip for forming intimate plane, as shown in Figure 4.
In the present embodiment, in order to be sufficiently accurate it may be desired to step 2. the vacuum in -3 and step 4. in vacuum it is consistent, step 2. -3
With step 4. in vacuum it is the smaller the better.
Embodiment three：
A kind of low temperature bonding processes for thyristor chip that the present embodiment proposes, it includes the following steps：
1. choose the monocrystalline silicon piece of high flatness, the alusil alloy piece that silicon content is 13.7%, molybdenum sheet, wherein, alusil alloy
Piece is used as metal binding agent.
Punching press is carried out to molybdenum sheet as the mould using dimpling 2. being pre-processed to molybdenum sheet, produces the center default
The deformation of deformation quantity.
Here, the determination process of default deformation quantity is：
2. -1, choose with step 1. in identical monocrystalline silicon piece, alusil alloy piece and molybdenum sheet.
2. -2, monocrystalline silicon piece, alusil alloy piece and molybdenum sheet are sequentially placed into graphite jig.
2. -3, the graphite jig equipped with monocrystalline silicon piece, alusil alloy piece and molybdenum sheet is put into high-temperature vacuum furnace, in vacuum
Degree is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 600 DEG C, monocrystalline silicon piece is attached to shape on molybdenum sheet
Into the thyristor chip of deformation, the deformation quantity at the center of 3~6 inches of thyristor chip is 28~280 μm.
2. -4, using the deformation quantity at the center of the thyristor chip of deformation as default deformation quantity.
3. the molybdenum sheet of monocrystalline silicon piece, alusil alloy piece and deformation is sequentially placed into graphite jig, deformation is required when being put into
Molybdenum sheet concave surface face alusil alloy piece, as shown in Figure 3.
4. the graphite jig of the molybdenum sheet equipped with monocrystalline silicon piece, alusil alloy piece and deformation is put into high-temperature vacuum furnace,
Vacuum is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 600 DEG C, monocrystalline silicon piece is attached to molybdenum sheet
The upper thyristor chip for forming intimate plane, as shown in Figure 4.
In the present embodiment, in order to be sufficiently accurate it may be desired to step 2. the vacuum in -3 and step 4. in vacuum it is consistent, step 2. -3
With step 4. in vacuum it is the smaller the better.
Example IV：
A kind of low temperature bonding processes for thyristor chip that the present embodiment proposes, it includes the following steps：
1. choose the monocrystalline silicon piece of high flatness, the alusil alloy piece that silicon content is 11%, molybdenum sheet, wherein, alusil alloy piece
As metal binding agent.
Punching press is carried out to molybdenum sheet as the mould using dimpling 2. being pre-processed to molybdenum sheet, produces the center default
The deformation of deformation quantity.
Here, the determination process of default deformation quantity is：
2. -1, choose with step 1. in identical monocrystalline silicon piece, alusil alloy piece and molybdenum sheet.
2. -2, monocrystalline silicon piece, alusil alloy piece and molybdenum sheet are sequentially placed into graphite jig.
2. -3, the graphite jig equipped with monocrystalline silicon piece, alusil alloy piece and molybdenum sheet is put into high-temperature vacuum furnace, in vacuum
Degree is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 585 DEG C, monocrystalline silicon piece is attached to shape on molybdenum sheet
Into the thyristor chip of deformation, the deformation quantity at the center of 3~6 inches of thyristor chip is 28~280 μm.
2. -4, using the deformation quantity at the center of the thyristor chip of deformation as default deformation quantity.
3. the molybdenum sheet of monocrystalline silicon piece, alusil alloy piece and deformation is sequentially placed into graphite jig, deformation is required when being put into
Molybdenum sheet concave surface face alusil alloy piece, as shown in Figure 3.
4. the graphite jig of the molybdenum sheet equipped with monocrystalline silicon piece, alusil alloy piece and deformation is put into high-temperature vacuum furnace,
Vacuum is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 585 DEG C, monocrystalline silicon piece is attached to molybdenum sheet
The upper thyristor chip for forming intimate plane, as shown in Figure 4.
In the present embodiment, in order to be sufficiently accurate it may be desired to step 2. the vacuum in -3 and step 4. in vacuum it is consistent, step 2. -3
With step 4. in vacuum it is the smaller the better.
Embodiment five：
A kind of low temperature bonding processes for thyristor chip that the present embodiment proposes, it includes the following steps：
1. choose the monocrystalline silicon piece of high flatness, the alusil alloy piece that silicon content is 12%, molybdenum sheet, wherein, alusil alloy piece
As metal binding agent.
Punching press is carried out to molybdenum sheet as the mould using dimpling 2. being pre-processed to molybdenum sheet, produces the center default
The deformation of deformation quantity.
Here, the determination process of default deformation quantity is：
2. -1, choose with step 1. in identical monocrystalline silicon piece, alusil alloy piece and molybdenum sheet.
2. -2, monocrystalline silicon piece, alusil alloy piece and molybdenum sheet are sequentially placed into graphite jig.
2. -3, the graphite jig equipped with monocrystalline silicon piece, alusil alloy piece and molybdenum sheet is put into high-temperature vacuum furnace, in vacuum
Degree is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 585 DEG C, monocrystalline silicon piece is attached to shape on molybdenum sheet
Into the thyristor chip of deformation, the deformation quantity at the center of 3~6 inches of thyristor chip is 28~280 μm.
2. -4, using the deformation quantity at the center of the thyristor chip of deformation as default deformation quantity.
3. the molybdenum sheet of monocrystalline silicon piece, alusil alloy piece and deformation is sequentially placed into graphite jig, deformation is required when being put into
Molybdenum sheet concave surface face alusil alloy piece, as shown in Figure 3.
4. the graphite jig of the molybdenum sheet equipped with monocrystalline silicon piece, alusil alloy piece and deformation is put into high-temperature vacuum furnace,
Vacuum is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 585 DEG C, monocrystalline silicon piece is attached to molybdenum sheet
The upper thyristor chip for forming intimate plane, as shown in Figure 4.
In the present embodiment, in order to be sufficiently accurate it may be desired to step 2. the vacuum in -3 and step 4. in vacuum it is consistent, step 2. -3
With step 4. in vacuum it is the smaller the better.
The graphite jig into embodiment five of above-described embodiment one can directly use existing semienclosed cylindrical shape graphite
Mould, just with this graphite jig, can produce the cavity of Poor cohesion；Can be on each side wall of existing graphite jig
Uniformly open up multiple lateral through aperture, i.e., so that each side wall hollow out of graphite jig, hollow out shape can be rectangle or diamond shape etc.,
The graphite jig of side wall hollow out can increase heat conduction, reduce the internal-external temperature difference of graphite jig, can effectively improve combination
The precision and uniformity of temperature, so as to be effectively prevented from producing the cavity of Poor cohesion.
Claims (4)
1. a kind of low temperature bonding processes of thyristor chip, it is characterised in that include the following steps：
1. choose the monocrystalline silicon piece of high flatness, the alusil alloy piece that silicon content is 9.7%~13.7%, molybdenum sheet, wherein, aluminium silicon
Alloy sheet is used as metal binding agent；
2. being pre-processed to molybdenum sheet, the center is set to produce the deformation of default deformation quantity；
The step 2. in molybdenum sheet is pre-processed as the mould using dimpling to molybdenum sheet carry out punching press；
3. the molybdenum sheet of monocrystalline silicon piece, alusil alloy piece and deformation is sequentially placed into graphite jig, the molybdenum of deformation is required when being put into
The concave surface face alusil alloy piece of piece；
4. the graphite jig of the molybdenum sheet equipped with monocrystalline silicon piece, alusil alloy piece and deformation is put into high-temperature vacuum furnace, in vacuum
Degree is higher than 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 580~600 DEG C, monocrystalline silicon piece is attached to molybdenum sheet
The upper thyristor chip for forming intimate plane；
Offered on four side walls of the graphite jig for increasing heat conduction, reducing inside and outside the graphite jig
The lateral through aperture of the temperature difference.
2. the low temperature bonding processes of a kind of thyristor chip according to claim 1, it is characterised in that the step is 2.
In preset deformation quantity determination process be：
2. -1, choose with step 1. in identical monocrystalline silicon piece, alusil alloy piece and molybdenum sheet；
2. -2, monocrystalline silicon piece, alusil alloy piece and molybdenum sheet are sequentially placed into graphite jig；
2. -3, the graphite jig equipped with monocrystalline silicon piece, alusil alloy piece and molybdenum sheet is put into high-temperature vacuum furnace, in vacuum height
In 3 × 10-3Pa, and temperature melts alusil alloy piece under conditions of 580~600 DEG C, monocrystalline silicon piece is attached to shape on molybdenum sheet
Into the thyristor chip of deformation；
2. -4, using the deformation quantity at the center of the thyristor chip of deformation as default deformation quantity.
3. the low temperature bonding processes of a kind of thyristor chip according to claim 1, it is characterised in that the step is 1.
The silicon content of middle alusil alloy piece is 11.7%.
4. the low temperature bonding processes of a kind of thyristor chip according to claim 3, it is characterised in that the step is 4.
The condition of middle temperature is 580~590 DEG C.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4875613A (en) * | 1987-04-03 | 1989-10-24 | Bbc Brown Boveri Ag | Apparatus for manufacturing a laminar bond |
| CN1595623A (en) * | 2004-06-25 | 2005-03-16 | 沈首良 | A method for preparing high power thyristor core |
| CN1723543B (en) * | 2002-12-09 | 2010-04-28 | 原子能委员会 | Method of producing a complex structure by assembling stressed structures |
| CN203367240U (en) * | 2013-07-22 | 2013-12-25 | 沈首良 | Structure for sintering and assembling diodes and thyristors with silicon wafer edge alloy wetting well |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6035823B2 (en) * | 1980-12-17 | 1985-08-16 | 株式会社日立製作所 | Manufacturing method for semiconductor devices |
| JPS6053036A (en) * | 1983-09-02 | 1985-03-26 | Mitsubishi Electric Corp | Manufacture of semiconductor element |
| JPH10247670A (en) * | 1997-03-03 | 1998-09-14 | Ricoh Co Ltd | Solder bump mounting method |
-
2015
- 2015-07-21 CN CN201510430034.9A patent/CN105118789B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4875613A (en) * | 1987-04-03 | 1989-10-24 | Bbc Brown Boveri Ag | Apparatus for manufacturing a laminar bond |
| CN1723543B (en) * | 2002-12-09 | 2010-04-28 | 原子能委员会 | Method of producing a complex structure by assembling stressed structures |
| CN1595623A (en) * | 2004-06-25 | 2005-03-16 | 沈首良 | A method for preparing high power thyristor core |
| CN203367240U (en) * | 2013-07-22 | 2013-12-25 | 沈首良 | Structure for sintering and assembling diodes and thyristors with silicon wafer edge alloy wetting well |
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