CN105099390A - Crystal oscillator and manufacturing method of crystal oscillator - Google Patents
Crystal oscillator and manufacturing method of crystal oscillator Download PDFInfo
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- CN105099390A CN105099390A CN201410200465.1A CN201410200465A CN105099390A CN 105099390 A CN105099390 A CN 105099390A CN 201410200465 A CN201410200465 A CN 201410200465A CN 105099390 A CN105099390 A CN 105099390A
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- quartz crystal
- crystal unit
- terminal
- ceramic
- crown cap
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Abstract
The invention provides a crystal oscillator and a manufacturing method of a crystal oscillator. A crystal plate is supported on the main surface of a rectangular ceramic pedestal from a downward view. The crystal oscillator comprises: a support electrode of the crystal plate, formed on the main surface; through terminals, formed in gaps at the four corners of the pedestal; band-shaped insulating films, arranged on the inner sides of the outer periphery of the ceramic pedestal; and a metal lid, which covers the crystal plate and seals the inside in an airtight manner. Conductors are formed in positions that are electrically connected to the two through terminals serving as grounding terminals, in positions without insulating films and also in positions fixing and sealing the metal lid, and the through terminals and metal lid are electrically connected through the conductors. In this way, a circuit is prevented from functioning abnormally.
Description
Technical field
The present invention relates to the manufacture method of a kind of quartz crystal unit and quartz crystal unit, particularly relate to and utilize the bonding metal lids (cover) such as electroconductive resin at the pedestal (base) formed by insulators such as potteries (ceramic) and crystal wafer be hermetically sealed in the quartz crystal unit in crown cap, electrical connection is arranged at the ground connection (ground of the outer bottom of pedestal, GND) electric conductor of terminal and crown cap is arranged at sealing surface, prevent the capacitance variations of the near circuitry because of quartz crystal unit, noise (noise) produces the quartz crystal unit of improper action and the manufacture method of quartz crystal unit of the circuit caused.
Background technology
In existing this quartz crystal unit, as shown in FIG. 6 and 7, AgPd alloy (silver-palladium (palladium) alloy) is utilized to form supporting electrode lower layer part 3a and splicing ear 2a at the surperficial 1b overlooking rectangular-shaped base of ceramic 1, in four bights of base of ceramic 1, penetrating terminal (throughterminal) 2b formed by AgPd is formed respectively at castellations (castellation) (notch part) that be made up of the wall of the through hole formed during flaky pottery blank (through hole (throughhole)) 1a, penetrating terminal 2c.
And form supporting electrode lower layer part 3a at the surperficial 1b of base of ceramic 1, described supporting electrode lower layer part 3a is formed at and is connected with penetrating terminal 2c and keeps the lower floor of the supporting electrode 3b of crystal wafer 5, and is formed by AgPd alloy.
And, at the upper surface of described supporting electrode lower layer part 3a, AgPd formation is utilized to be engaged by electroconductive resin 7 and keep the supporting electrode 3b of crystal wafer 5, in addition, form banded dielectric film 10 in the inner side of the outer edge of the upper surface of base of ceramic 1, described dielectric film 10 makes crown cap 6 can not electric short circuit with the supporting electrode 3b of crystal wafer 5.
And, carry crown cap 6 at the upper surface of described dielectric film 10, be engaged in dielectric film 10 by the encapsulant that low-melting glass, thermosetting resin etc. are suitable, thus crystal wafer 5 is hermetically sealed in crown cap 6.
In addition, usually arrange four mounting terminal 4 in four bights of the outer bottom 1c of base of ceramic 1, the electrode pattern (electrodepattern) being connected to the mounting terminal 4 of each penetrating terminal 2b, 2c is formed by AgPd alloy.In this, the mounting terminal 4 being connected to penetrating terminal 2c becomes the electrode being applied in voltage, on the other hand, the mounting terminal 4 being connected to penetrating terminal 2b becomes the grounding electrode (with reference to patent documentation 1 and patent documentation 2) being connected to ground level (groundlevel).
(patent documentation 1: Japanese Patent Laid-Open 2013-70357 publication
Patent documentation 2: Japanese Patent Laid-Open 2011-211681 publication
Patent documentation 3: Japanese Patent Laid-Open 2009-105628 publication)
Utilize electroconductive resin crown cap is hermetically sealed in by as described in the pedestal of the resin seal packaging body (package) of pedestal that formed of the insulator of ceramic material, in the face (sealing surface) by crown cap resin seal, the electric conductor that crystal wafer is connected with outside terminal is arranged on the same face.Therefore, if utilize electroconductive resin by crown cap resin seal, so crystal support terminal can with crown cap electrical short, so the insulating barrier formed by glass material etc. is formed at sealing surface.
In addition, when the outer bottom of pedestal is provided with the quartz crystal unit of four outside terminals, two terminals (NC terminal) be not connected with crystal wafer are not disposed in on described sealing surface the same face.
But, when these terminals are disposed on the same face, as mentioned above, because insulating barrier is formed at the upper surface of pedestal, even if so use electroconductive resin set crown cap when sealing, also cannot be electrically connected with crown cap, therefore, the improper action of the circuit that cannot prevent the capacitance variations of the near circuitry because of quartz crystal unit, noise generation etc. from causing.
In this existing quartz crystal unit, because crown cap is not electrically connected with earth terminal, if so observe from the circuit side of carrying this quartz crystal unit, so crown cap becomes and electrostatic capacitance (C) or the electrically identical state of antenna (antenna) and play a role.
And, in the quartz crystal unit using this kind of resin seal pedestal, if quartz crystal unit is equipped on circuit substrate, although so tentatively can use, such as there is following situation: because of staff near quartz crystal unit cause capacitance variations or near circuitry produce noise cause being formed at the circuit of circuit substrate can not normally action playing a role.
Therefore, in order to eliminate this fault, in the quartz crystal unit of seam weldering (SeamSealing) type, lid (lid (1id)) is electrically connected on the earth terminal (with reference to patent documentation 3) of the outer bottom being arranged at base of ceramic via sealing ring (sealring).
Summary of the invention
The present invention completes to address this is that a little, relate to a kind of quartz crystal unit, the first type surface that described quartz crystal unit overlooks rectangular-shaped base of ceramic carries crystal wafer, and this quartz crystal unit comprises: the supporting electrode of described crystal wafer, is formed at described first type surface; Penetrating terminal, is formed at the notch part in four bights being arranged on described base of ceramic; Banded dielectric film, is formed at the inner side of the peripheral part of described base of ceramic; And crown cap, cover described crystal wafer by inner gas-tight seal; The feature of described quartz crystal unit is: can be electrically connected in described penetrating terminal play a role as earth terminal at least one described in penetrating terminal and do not form the position of described dielectric film and for described crown cap set and the sealing surface of sealing arranges electric conductor, via described electric conductor, described earth terminal be electrically connected with described crown cap.
In addition, the invention is characterized in: described electric conductor is formed as the conducting film being connected to two described penetrating terminals.
And the present invention relates to a kind of manufacture method of quartz crystal unit, manufacture described quartz crystal unit, the feature of this manufacture method is: do not formed described dielectric film position and for described crown cap set and sealing position formed electric conductor.
The effect of invention
According to quartz crystal unit of the present invention, can prevent the capacitance variations of the near circuitry because being formed at quartz crystal unit, noise from producing the improper action of the circuit caused.
Accompanying drawing explanation
Fig. 1 is the connection layout of the terminal pad of the quartz crystal unit of the embodiment be applied to as quartz crystal unit of the present invention.
Fig. 2 is the vertical view of the base of ceramic of the supporting electrode pattern forming quartz crystal unit of the present invention.
Fig. 3 (a), Fig. 3 (b) represent the partial cross section of the NC portion of terminal of conventional example and quartz crystal unit of the present invention, Fig. 3 (a) represents that the partial cross section in portion looked by the II-II arrow of the NC portion of terminal of the conventional example shown in Fig. 7, and Fig. 3 (b) represents that the partial cross section in portion looked by the I-I arrow of the NC portion of terminal of the present invention shown in Fig. 2.
Fig. 4 is the block diagram of the manufacture method of quartz crystal unit of the present invention.
Fig. 5 is the vertical view of the flaky pottery substrate being formed with through hole and striping (BreakLine) in the flaky pottery blank used in the manufacture of quartz crystal unit of the present invention.
Fig. 6 is the longitudinal section of existing quartz crystal unit.
Fig. 7 is the vertical view of the base of ceramic of the formation supporting electrode pattern of the existing quartz crystal unit shown in Fig. 6.
Reference numeral:
1: base of ceramic
1a: through hole
1b: surface
1c: outer bottom
2a: splicing ear
2b: penetrating terminal
2c: penetrating terminal
3a: supporting electrode lower layer part
3b: supporting electrode
4: mounting terminal
5: crystal wafer
6: crown cap
6a: flange
6b: thermosetting resin
6c: conductive adhesive
7: electroconductive resin
10: dielectric film
11: electric conductor
S: flaky pottery substrate
B: transversal
#1, #3: splicing ear
#2, #4: earth terminal
Embodiment
Below, the embodiment of quartz crystal unit of the present invention is described based on accompanying drawing.
(embodiment of quartz crystal unit)
First, Fig. 1 represents the connection layout of the terminal pad being applied to quartz crystal unit of the present invention, as shown in Figure 1, be provided with in the quartz crystal unit of four mounting terminal at the outer bottom of pedestal, two mounting terminal in these four mounting terminal are electrically connected with the electrode being formed at crystal wafer as splicing ear #1, splicing ear #3.But, though remaining two mounting terminal are formed with terminal, are not connected with crystal wafer and play a role as earth terminal #2, splicing ear #4.
In quartz crystal unit of the present invention, in the position be connected with described two earth terminals #2, #4, electric conductor is set respectively, and via the crown cap sealing crystal wafer is hermetically engaged in the electroconductive resin of the electric conductor being arranged at sealing surface, crown cap is electrically connected with earth terminal #2, #4.
Identical with the existing quartz crystal unit shown in Fig. 6 and Fig. 7, quartz crystal unit of the present invention forms supporting electrode lower layer part 3a and splicing ear 2a at the surperficial 1b overlooking rectangular-shaped base of ceramic 1 by AgPd alloy, formed by the castellations (notch part) being divided into the wall of four parts to form the through hole formed during at flaky pottery blank (through hole) 1a in four bights of base of ceramic 1, be formed with the penetrating terminal 2b, the penetrating terminal 2c that are formed by AgPd at described notch part respectively.
And form supporting electrode lower layer part 3a at the surperficial 1b of base of ceramic 1, described supporting electrode lower layer part 3a is formed at and is connected to penetrating terminal 2c and the lower floor that keeps the supporting electrode 3b of crystal wafer 5, and is formed by AgPd alloy.
And, utilize AgPd to be formed to be engaged by electroconductive resin 7 at the upper surface of described supporting electrode lower layer part 3a and keep the supporting electrode 3b of crystal wafer 5, in addition, forming banded dielectric film 10 in the inner side of the peripheral part of the upper surface of base of ceramic 1.
And, engage at the upper surface of described dielectric film 10 via the low-melting glass containing heat cured electroconductive resin or highly purified Pb (lead) and carry crown cap 6, crystal wafer 5 is hermetically sealed in crown cap 6.
In this, the fusing point of low-melting glass is generally 600 ~ 700 DEG C, but fusing point can change according to additive.For low-melting glass of the present invention by adding plumbous (Pb), its fusing point becomes 320 DEG C.Therefore, if addition is few, low-melting glass is just similar to insulator, but in low-melting glass of the present invention, containing a large amount of plumbous (Pb), therefore, becomes electric conductor.
In addition, four mounting terminal 4 are set in four bights of the outer bottom 1c of base of ceramic 1, are connected to each penetrating terminal 2b, the electrode pattern of mounting terminal 4 of penetrating terminal 2c formed by AgPd alloy.In this, the mounting terminal 4 being connected to the penetrating terminal 2c played a role as splicing ear #1, splicing ear #3 becomes the electrode being applied in voltage, on the other hand, the mounting terminal 4 being connected to penetrating terminal 2b plays a role as the earth terminal being connected to ground level.
In quartz crystal unit of the present invention, especially as Fig. 2 and look shown in Fig. 3 (b) of sectional view as the I-I arrow of Fig. 2, on two the penetrating terminal 2b played a role as earth terminal or the position being electrically connected on these penetrating terminals 2b the electric conductor 11 formed by suitable conductive material is set respectively, the upper surface and dielectric film 10 of described two electric conductors 11 bond and the open end of flange (flange) 6a of jointing metal lid 6 throughout whole utilization conductive adhesive or low-melting glass 6c.
In this, as long as electric conductor 11 is electrically connected with two penetrating terminals played a role as earth terminal, its shape can be arbitrarily.Such as, position electric conductor 11 being electrically connected on penetrating terminal 2b as conducting film can be formed at, in addition, also as shown in chain line in Fig. 2, can be formed in the position separated from penetrating terminal 2b via through electrode being formed at base of ceramic 1 etc. and be electrically connected on crown cap 6.In this, the material of electric conductor 11 can be containing the material of the high material of conductivity, the such as cheap material such as copper, conductive polymer material.The expensive material such as gold and silver need not be used.
Like this, by electric conductor 11 is engaged in crown cap 6 via conductive adhesive or low-melting glass 6c, two the penetrating terminal 2b played a role as earth terminal are electrically connected with crown cap 6, prevent the capacitance variations of the near circuitry because of quartz crystal unit, noise from producing the improper action of the circuit caused.Thus, quartz crystal unit carries to circuit substrate by client, also can guarantee good electrical characteristic.
In contrast, in the quartz crystal unit of the conventional example shown in Fig. 7, even if use electroconductive resin when being engaged to base of ceramic 1 by crown cap 6, as mentioned above, owing to being formed with insulating barrier at sealing surface, so crown cap 6 can not be electrically connected with earth terminal 2b.
(embodiment of the manufacture method of quartz crystal unit)
Then, the manufacture method of quartz crystal unit of the present invention is described based on Fig. 4 and Fig. 5.
As shown in Figure 4, in the 1st step (S1) of the manufacture method of quartz crystal unit of the present invention, first, the flaky pottery blank of the flaky pottery substrate S that can manufacture multiple base of ceramic 1 is formed into.Then, form through hole 1a in hundreds of the positions corresponding with four bights of each base of ceramic 1 as shown in Figure 5 and after the position in link four bight forms transversal (striping) B, calcine flaky pottery blank and obtain flaky pottery substrate B.
In the 2nd step (S2), in the circuit pattern forming surface of each base of ceramic 1 of flaky pottery substrate B, screen mask (screenmasks) is used to print the metal paste (paste) of AgPd alloy and form circuit pattern.
In the 3rd step (S3), around the described circuit pattern being formed at each base of ceramic 1, utilize heat-resistant resin or glass paste, except the position of electric conductor will be set at next step, use screen mask to form dielectric film 10.
In the 4th step (S4), the position not forming dielectric film 10 in previous step arranges the electric conductor 11 formed by suitable electric conducting material.Usually, use screen mask type metal slurry and form conducting film.
In the 5th step (S5), form in the circuit forming surface of each base of ceramic 1 forming circuit pattern the supporting electrode 3b formed by AgPd.
In the 6th step (S6), utilize conductive adhesive 7 set at the upper surface of supporting electrode 3b and carry crystal wafer 5, and electrically, be connected mechanically to supporting electrode 3b.
In the 7th step (S7), according to mass loading effect, measure and adjust the vibration frequency of the crystal wafer 5 of each base of ceramic 1 being equipped on flaky pottery substrate.
In the 8th step (S8), on the dielectric film 10 corresponding with each base of ceramic 1 and electric conductor 11, use the open end (flange surface) of the flange 6a of conductive adhesive or low-melting glass 6c jointing metal lid 6 and crystal wafer 5 is sealed in crown cap 6 hermetically.
In the 9th step (S9), split sheet ceramic substrate along transversal (striping) and obtain each quartz crystal unit.
Claims (3)
1. a quartz crystal unit, the first type surface that described quartz crystal unit overlooks rectangular-shaped base of ceramic carries crystal wafer, and the feature of described quartz crystal unit is to comprise: the supporting electrode of described crystal wafer, is formed at described first type surface; Penetrating terminal, is formed at the notch part in four bights being arranged on described base of ceramic; Banded dielectric film, is formed at the inner side of the peripheral part of described base of ceramic; And crown cap, cover described crystal wafer and by inner gas-tight seal; Described quartz crystal unit can be electrically connected in described penetrating terminal play a role as earth terminal at least one described in penetrating terminal, and do not formed described dielectric film position and for described crown cap set and sealing sealing surface electric conductor is set, described earth terminal is electrically connected via described electric conductor with described crown cap.
2. quartz crystal unit according to claim 1, is characterized in that: described electric conductor is formed as the conducting film being connected to described penetrating terminal.
3. the manufacture method of a quartz crystal unit, it is the manufacture method for the manufacture of the quartz crystal unit described in claim 1 or 2, and the feature of the manufacture method of described quartz crystal unit is: do not formed described dielectric film position and for described crown cap set and sealing position formed electric conductor.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410200465.1A CN105099390A (en) | 2014-05-13 | 2014-05-13 | Crystal oscillator and manufacturing method of crystal oscillator |
| JP2014257202A JP2015220749A (en) | 2014-05-13 | 2014-12-19 | Crystal oscillator and manufacturing method for the same |
| TW104108869A TW201543812A (en) | 2014-05-13 | 2015-03-20 | Crystal vibrator and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410200465.1A CN105099390A (en) | 2014-05-13 | 2014-05-13 | Crystal oscillator and manufacturing method of crystal oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105099390A true CN105099390A (en) | 2015-11-25 |
Family
ID=54579116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410200465.1A Pending CN105099390A (en) | 2014-05-13 | 2014-05-13 | Crystal oscillator and manufacturing method of crystal oscillator |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2015220749A (en) |
| CN (1) | CN105099390A (en) |
| TW (1) | TW201543812A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106357234A (en) * | 2016-08-31 | 2017-01-25 | 成都晶宝时频技术股份有限公司 | Quartz crystal resonator and machining technology thereof |
| CN107888159A (en) * | 2017-11-22 | 2018-04-06 | 铜陵日兴电子有限公司 | A kind of high leakproofness quartz-crystal resonator |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021220542A1 (en) * | 2020-04-30 | 2021-11-04 | 株式会社村田製作所 | Piezoelectric vibrator |
| WO2022004069A1 (en) * | 2020-07-02 | 2022-01-06 | 株式会社村田製作所 | Piezoelectric oscillator |
| WO2022004070A1 (en) * | 2020-07-02 | 2022-01-06 | 株式会社村田製作所 | Piezoelectric oscillator |
| WO2022004071A1 (en) * | 2020-07-02 | 2022-01-06 | 株式会社村田製作所 | Piezoelectric oscillator |
-
2014
- 2014-05-13 CN CN201410200465.1A patent/CN105099390A/en active Pending
- 2014-12-19 JP JP2014257202A patent/JP2015220749A/en active Pending
-
2015
- 2015-03-20 TW TW104108869A patent/TW201543812A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106357234A (en) * | 2016-08-31 | 2017-01-25 | 成都晶宝时频技术股份有限公司 | Quartz crystal resonator and machining technology thereof |
| CN107888159A (en) * | 2017-11-22 | 2018-04-06 | 铜陵日兴电子有限公司 | A kind of high leakproofness quartz-crystal resonator |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201543812A (en) | 2015-11-16 |
| JP2015220749A (en) | 2015-12-07 |
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Application publication date: 20151125 |
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| WD01 | Invention patent application deemed withdrawn after publication |