WO2021220542A1 - Piezoelectric vibrator - Google Patents

Piezoelectric vibrator Download PDF

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Publication number
WO2021220542A1
WO2021220542A1 PCT/JP2020/044480 JP2020044480W WO2021220542A1 WO 2021220542 A1 WO2021220542 A1 WO 2021220542A1 JP 2020044480 W JP2020044480 W JP 2020044480W WO 2021220542 A1 WO2021220542 A1 WO 2021220542A1
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WO
WIPO (PCT)
Prior art keywords
electrode
base member
gpa
piezoelectric
protective film
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PCT/JP2020/044480
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French (fr)
Japanese (ja)
Inventor
茂夫 尾島
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株式会社村田製作所
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Publication of WO2021220542A1 publication Critical patent/WO2021220542A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details

Definitions

  • the present invention relates to a piezoelectric vibrator.
  • Oscillators are used in various electronic devices such as mobile communication terminals, communication base stations, and home appliances for applications such as timing devices, sensors, and oscillators. With the increasing functionality of electronic devices, inexpensive and high-performance vibrating elements are required.
  • Patent Document 1 a base member and a metal lid member are joined via a conductive adhesive, and the lid member is electrically connected to the grounding electrode of the base member by the conductive adhesive to generate electromagnetic waves.
  • a crystal transducer that suppresses noise due to entering and exiting is disclosed.
  • the bonding strength of the conductive adhesive tends to be lower than the bonding strength of the non-conductive adhesive, and in the crystal transducer described in Patent Document 1, the lid member is peeled off from the base member due to insufficient bonding strength. May be done.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a piezoelectric vibrator capable of suppressing the generation of defective products while suppressing noise.
  • the piezoelectric vibrator according to one aspect of the present invention is joined by sandwiching a conductive adhesive joining member between the piezoelectric vibrating element, the base member on which the piezoelectric vibrating element is mounted, and the base member, and is joined to the base member.
  • a lid member made of a conductive material that forms an internal space in which a piezoelectric vibrating element is arranged is provided, and the lid member includes a top wall portion and a side wall portion extending from the outer edge of the top wall portion toward the base member.
  • the side wall portion has a facing surface facing the base member, and the base member is provided with a feeding electrode to which a piezoelectric vibrating element is connected and a grounding electrode used for grounding.
  • the electrodes are electrically connected to the lid member via the joining member, and the elastic coefficient Eb of the joining member at 30 ° C. and the thickness T of the joining member between the base member and the facing surface are 0.5 GPa.
  • the relationship of ⁇ Eb ⁇ 4.0 GPa and 10 ⁇ m ⁇ T ⁇ 50 ⁇ m is satisfied.
  • the piezoelectric vibrator according to one aspect of the present invention is joined by sandwiching a joining member of a conductive adhesive between a piezoelectric vibrating element, a base member on which the piezoelectric vibrating element is mounted, and a base member, and is joined to the base member.
  • a lid member made of a conductive material that forms an internal space in which a piezoelectric vibrating element is arranged is provided, and the lid member includes a top wall portion and a side wall portion extending from the outer edge of the top wall portion toward the base member.
  • the side wall portion has a facing surface facing the base member
  • the base member has a power feeding electrode to which a piezoelectric vibrating element is connected, a grounding electrode used for grounding, and at least facing the facing surface.
  • a protective film of an insulating material is provided to cover the region of the power feeding electrode, and the ground electrode and the protective film are in contact with the joining member, and the elastic coefficient Eb of the joining member at 30 ° C. and protection at 30 ° C.
  • the elastic coefficient Ep of the film, the thickness Tb of the joining member between the feeding electrode and the facing surface, and the thickness Tp of the protective film between the feeding electrode and the facing surface are 0.5 GPa ⁇ (Ep ⁇ Tp + Eb). ⁇ Tb) / (Tp + Tb) ⁇ 4.0 GPa and 20 ⁇ m ⁇ Tp + Tb ⁇ 50 ⁇ m are satisfied.
  • FIG. 1 is an exploded perspective view schematically showing the configuration of the crystal oscillator according to the first embodiment.
  • FIG. 2 is a plan view schematically showing the configuration of the crystal oscillator according to the first embodiment.
  • FIG. 3 is a cross-sectional view schematically showing the configuration of the crystal oscillator according to the first embodiment.
  • FIG. 4 is a plan view schematically showing the configurations of the base member and the crystal vibrating element. Note that FIG. 3 is a cross-sectional view taken along the line III-III of the crystal oscillator 1 shown in FIG.
  • Each drawing is provided with a Cartesian coordinate system consisting of the X-axis, Y'axis and Z'axis for convenience to clarify the relationship between the drawings and to help understand the positional relationship of each member.
  • the X-axis, Y'axis and Z'axis correspond to each other in the drawings.
  • the X-axis, Y'axis, and Z'axis are each related to the crystallographic axes of the crystal piece 11 described later.
  • the X-axis corresponds to the electric axis (polar axis) of the quartz crystal
  • the Y-axis corresponds to the mechanical axis of the quartz crystal
  • the Z-axis corresponds to the optical axis of the quartz crystal.
  • the Y'axis and the Z'axis are axes obtained by rotating the Y axis and the Z axis around the X axis in the direction of the Y axis to the Z axis by 35 degrees 15 minutes ⁇ 1 minute 30 seconds, respectively.
  • the direction parallel to the X axis is referred to as "X axis direction”
  • the direction parallel to the Y'axis is referred to as “Y'axis direction”
  • the direction parallel to the Z'axis is referred to as "Z'axis direction”.
  • the direction of the tip of the arrow on the X-axis, Y'axis, and Z'axis is called “+ (plus)”, and the direction opposite to the arrow is called “-(minus)”.
  • the + Y'axis direction will be described as an upward direction
  • the ⁇ Y'axis direction will be described as a downward direction, but the vertical direction of the crystal oscillator 1 is not limited.
  • the crystal oscillator 1 includes a crystal vibrating element 10, a base member 30, a lid member 40, and a joining member 50.
  • the crystal vibrating element 10 is provided between the base member 30 and the lid member 40.
  • the base member 30 and the lid member 40 form a cage for accommodating the crystal vibrating element 10, and are overlapped along the Y'axis direction.
  • the crystal vibrating element 10 is mounted on the base member 30.
  • the crystal vibrating element 10 is an element that vibrates a crystal by a piezoelectric effect and converts electrical energy and mechanical energy.
  • the crystal vibrating element 10 includes a flaky crystal piece 11, a first excitation electrode 14a and a second excitation electrode 14b constituting a pair of excitation electrodes, and a first extraction electrode 15a and a second extraction electrode forming a pair of extraction electrodes. It includes an electrode 15b, and a first connection electrode 16a and a second connection electrode 16b forming a pair of connection electrodes.
  • the crystal piece 11 has an upper surface 11A and a lower surface 11B facing each other.
  • the upper surface 11A is located on the side opposite to the side facing the base member 30, that is, the side facing the top wall portion 41 of the lid member 40 described later.
  • the lower surface 11B is located on the side facing the base member 30.
  • the crystal piece 11 is, for example, an AT-cut type crystal crystal.
  • the AT-cut type crystal piece 11 is a plane parallel to a plane specified by the X-axis and the Z'axis in a Cartesian coordinate system consisting of an X-axis, a Y'axis, and a Z'axis that intersect each other (hereinafter, "XZ". It is called a'plane'. The same applies to a plane specified by another axis.) Is the main surface, and is formed so that the direction parallel to the Y'axis is the thickness.
  • the crystal vibrating element 10 using the AT-cut type crystal piece 11 has high frequency stability in a wide temperature range.
  • the thickness slip vibration mode Thiickness Shear Vibration Mode
  • a different cut other than the AT cut may be applied to the crystal piece 11.
  • BT cut, GT cut, SC cut and the like may be applied.
  • the crystal vibrating element may be a tuning fork type crystal vibrating element using a crystal piece having a cut angle called a Z plate.
  • the crystal piece 11 is parallel to the long side direction in which the long side parallel to the X-axis direction extends, the short side direction in which the short side parallel to the Z'axis direction extends, and the Y'axis direction. It is a flat plate having a thickness direction in which the thickness extends.
  • the plane shape of the crystal piece 11 is rectangular.
  • the crystal piece 11 is not limited to a flat plate shape, and may have a mesa-shaped structure or an inverted mesa-shaped structure.
  • the crystal piece 11 has a tapered shape in which the thickness changes continuously, a staircase shape in which the thickness changes discontinuously, a convex shape in which the amount of change in thickness continuously changes, or a convex shape in which the amount of change in thickness changes discontinuously. It may have a changing bevel shape.
  • the first excitation electrode 14a is provided on the upper surface 11A of the crystal piece 11, and the second excitation electrode 14b is provided on the lower surface 11B of the crystal piece 11.
  • the first excitation electrode 14a and the second excitation electrode 14b face each other with the crystal piece 11 interposed therebetween.
  • the first excitation electrode 14a and the second excitation electrode 14b each have a rectangular shape, and are arranged so that substantially the entire surface of the crystal piece 11 overlaps with each other.
  • the first extraction electrode 15a is provided on the upper surface 11A of the crystal piece 11, and the second extraction electrode 15b is provided on the lower surface 11B of the crystal piece 11.
  • the first extraction electrode 15a electrically connects the first excitation electrode 14a and the first connection electrode 16a.
  • the second extraction electrode 15b electrically connects the second excitation electrode 14b and the second connection electrode 16b.
  • the first connection electrode 16a and the second connection electrode 16b are electrodes for electrically connecting the first excitation electrode 14a and the second excitation electrode 14b to the base member 30, respectively, and are provided on the lower surface 11B of the crystal piece 11. Has been done.
  • the excitation electrode, the extraction electrode, and the connection electrode are, for example, a laminate composed of a base layer having good adhesion to the crystal piece 11 and an outermost layer having good chemical stability.
  • the materials constituting the excitation electrode, the extraction electrode and the connection electrode are, for example, chromium (Cr), gold (Au), titanium (Ti), molybdenum (Mo), aluminum (Al), nickel (Ni), and indium (In). , Palladium (Pd), silver (Ag), copper (Cu), tin (Sn), iron (Fe) and other metallic materials are preferably selected.
  • the excitation electrode, the extraction electrode, and the connection electrode may contain a conductive ceramic, a conductive resin, a semiconductor, or the like.
  • the base member 30 includes a flat plate-shaped substrate 31, a first electrode pad 33a and a second electrode pad 33b forming a pair of electrode pads, a top electrode 33c, a first side electrode 34a, and a second side electrode 34b.
  • a third side electrode 34c, a fourth side electrode 34d, a first external electrode 35a, a second external electrode 35b, a third external electrode 35c, a fourth external electrode 35d, and a protective film 39 are provided. There is.
  • the substrate 31 has an upper surface 31A and a lower surface 31B facing each other.
  • the upper surface 31A and the lower surface 31B correspond to a pair of main surfaces of the substrate 31.
  • the upper surface 31A is located on the side facing the crystal vibrating element 10 and the lid member 40, and the lower surface 31B is located on the side facing the circuit board when the crystal oscillator 1 is mounted on an external circuit board, for example. do.
  • the substrate 31 is a sintered material such as insulating ceramic (alumina), but may be provided by quartz or silicon.
  • the substrate 31 When the upper surface 31A is viewed in a plan view, the substrate 31 has a pair of long sides extending in the X-axis direction and facing each other in the Z'axis direction, and a pair of short sides extending in the Z'axis direction and facing each other in the X-axis direction.
  • Have. Fan-shaped recesses are provided at the four corners of the substrate 31. This recess is formed by dividing a through hole penetrating the substrate 31 from the upper surface 31A to the lower surface 31B.
  • the first electrode pad 33a and the second electrode pad 33b are provided on the upper surface 31A of the substrate 31.
  • the first electrode pad 33a and the second electrode pad 33b are terminals for electrically connecting the crystal vibrating element 10 to the base member 30.
  • the top electrode 33c is an electrode that is electrically connected to the lid member 40.
  • the upper surface electrode 33c is provided at the corners of the base member 30 on the + X axis direction side and the ⁇ Z ′ axis direction side, and is located on the outermost surface of the base member 30 on the lid member 40 side.
  • the first side electrode 34a to the fourth side electrode 34d are provided on the side surface of the base member 30. Specifically, it is provided from the end on the upper surface 31A side to the end on the lower surface 31B side of the recess provided at the corner of the substrate 31 and covers the recess of the substrate 31. Each of the first side electrode 34a to the fourth side electrode 34d corresponds to a casting electrode.
  • the first side surface electrode 34a is provided in a recess provided at a corner of the base member 30 on the ⁇ X axis direction side and the + Z ′ axis direction side.
  • the second side surface electrode 34b is provided in a recess provided at a corner of the base member 30 on the + X axis direction side and the ⁇ Z ′ axis direction side.
  • the third side electrode 34c is provided in a recess provided at a corner of the base member 30 on the + X axis direction side and the + Z'axis direction side.
  • the fourth side electrode 34d is provided in a recess provided at a corner of the base member 30 on the ⁇ X axis direction side and the ⁇ Z ′ axis direction side.
  • the first side surface electrode 34a is electrically connected to the first electrode pad 33a via the wiring electrode provided on the upper surface 31A
  • the second side surface electrode 34b is connected to the second side electrode 34b via the wiring electrode provided on the upper surface 31A. It is electrically connected to the electrode pad 33b.
  • the third side surface electrode 34c is continuously provided from the top surface electrode 33c and is electrically connected to the top surface electrode 33c.
  • the first side surface electrode 34a, the first electrode pad 33a, and the wiring electrode connecting them correspond to a feeding electrode to which the crystal vibration element 10 is connected.
  • the second side surface electrode 34b, the second electrode pad 33b, and the wiring electrode connecting them also correspond to the feeding electrode.
  • the third side electrode 34c and the top electrode 33c correspond to grounding electrodes used for grounding the lid member 40.
  • the power feeding electrode and the grounding electrode are, for example, a laminated body composed of a base layer having good adhesion to the substrate 31 and a surface layer having good chemical stability.
  • the materials constituting the power feeding electrode and the grounding electrode are, for example, chromium (Cr), gold (Au), titanium (Ti), molybdenum (Mo), aluminum (Al), nickel (Ni), indium (In), and the like. It is preferably selected from metallic materials such as palladium (Pd), silver (Ag), copper (Cu), tin (Sn), and iron (Fe).
  • the power feeding electrode and the grounding electrode may contain a conductive ceramic, a conductive resin, a semiconductor, or the like.
  • the first external electrode 35a to the fourth external electrode 35d are electrodes for mounting the crystal oscillator 1 on an external circuit board by soldering or the like.
  • the first external electrode 35a to the fourth external electrode 35d are provided on the lower surface 31B of the substrate 31.
  • the first external electrode 35a is provided at a corner of the base member 30 on the ⁇ X axis direction side and the + Z ′ axis direction side, and is electrically connected to the first side surface electrode 34a.
  • the first external electrode 35a is provided at the corners of the base member 30 on the + X axis direction side and the ⁇ Z ′ axis direction side, and is electrically connected to the second side surface electrode 34b.
  • the third external electrode 35c is provided at the corners of the base member 30 on the + X axis direction side and the + Z'axis direction side, and is electrically connected to the third side surface electrode 34c.
  • the fourth external electrode 35d is provided at the corners of the base member 30 on the ⁇ X axis direction side and the ⁇ Z ′ axis direction side, and is electrically connected to the fourth side surface electrode 34d.
  • the first external electrode 35a and the second external electrode 35b are used to supply an electric signal to the pair of feeding electrodes.
  • the third external electrode 35c is used to ground the grounding electrode.
  • the fourth external electrode 35d is a dummy electrode to which an electric signal or the like is not input / output.
  • the fourth external electrode 35d may be used for grounding the lid member 40 together with the third external electrode 35c, or may be omitted.
  • the protective film 39 is provided on the side of the base member 30 facing the lid member 40 and in a region in contact with the joining member 50.
  • the protective film 39 covers a part of the feeding electrode and electrically insulates the feeding electrode and the lid member 40.
  • the protective film 39 covers the wiring electrode connecting the first side surface electrode 34a and the first electrode pad 33a, and covers the wiring electrode connecting the second side surface electrode 34b and the second electrode pad 33b.
  • the protective film 39 is provided in the outer region of the upper surface electrode 33c, and the upper surface electrode 33c is exposed from the protective film 39.
  • the protective film 39 is, for example, a solder resist.
  • the joining member 50 described later is formed of an anisotropic conductive adhesive, even if the joining member 50 comes into contact with the feeding electrode, the joining member 50 between the crystal vibration element 10 and the lid member 40 is interposed. Since short circuits are unlikely to occur, the protective film 39 may be omitted.
  • the base member 30 includes a first conductive holding member 36a and a second conductive holding member 36b that form a pair of conductive holding members.
  • the first conductive holding member 36a and the second conductive holding member 36b hold the crystal vibrating element 10 at intervals from the base member 30 and the lid member 40.
  • the first conductive holding member 36a and the second conductive holding member 36b electrically connect the crystal vibrating element 10 and the base member 30.
  • the first conductive holding member 36a electrically connects the first electrode pad 33a and the first connecting electrode 16a
  • the second conductive holding member 36b electrically connects the second electrode pad 33b and the second connecting electrode. It is electrically connected to 16b.
  • the first conductive holding member 36a and the second conductive holding member 36b are cured products of a conductive adhesive containing, for example, a thermosetting resin and a photocurable resin.
  • the lid member 40 is joined to the base member 30.
  • the lid member 40 forms an internal space for accommodating the crystal vibrating element 10 with the base member 30.
  • the lid member 40 has a recess 49 that opens on the side of the base member 30, and the internal space in the present embodiment corresponds to the space inside the recess 49.
  • the recess 49 is liquidtightly sealed.
  • the material of the lid member 40 is a conductive material, more preferably a highly airtight metal material. Since the lid member 40 is made of a conductive material, the lid member 40 is provided with an electromagnetic shield function that reduces the ingress and egress of electromagnetic waves into the internal space.
  • the material of the lid member 40 is preferably a material having a coefficient of thermal expansion close to that of the substrate 31, for example, the coefficient of thermal expansion near room temperature is in a wide temperature range of glass or ceramic. It is a matching Fe—Ni—Co based alloy.
  • the lid member 40 has a flat top wall portion 41 and a side wall portion 42 connected to the outer edge of the top wall portion 41.
  • the top wall portion 41 extends along the upper surface 31A of the substrate 31 and faces the base member 30 with the crystal vibrating element 10 interposed therebetween in the height direction.
  • the side wall portion 42 extends from the top wall portion 41 toward the base member 30, and surrounds the crystal vibrating element 10 in a direction parallel to the upper surface 31A of the base 31.
  • the lid member 40 may further have a flange portion that is connected to the tip of the side wall portion 42 on the base member 30 side and extends outward along the upper surface 31A of the substrate 31.
  • the lid member 40 has an inner surface located on the side of the recess 49 and an outer surface on the opposite side of the recess 49 and exposed to the outside.
  • the inner surface is the side of the top wall portion 41 and the side wall portion 42 facing the crystal oscillator 10
  • the outer surface is the side of the top wall portion 41 and the side wall portion 42 opposite to the side facing the crystal oscillator 10.
  • the lid member 40 further has a facing surface 43B facing the base member 30.
  • the facing surface 43B is a surface extending parallel to the upper surface 31A of the base 31 at the tip of the side wall portion 42 of the base member 30.
  • the area of the facing surface 43B can be expanded by providing a flange portion.
  • the planar shape of the lid member 40 when viewed in a plane from the normal direction of the main surface is, for example, a substantially rectangular shape.
  • the planar shape of the lid member 40 is not limited to the above, and may be a polygonal shape, a circular shape, an elliptical shape, or a combination thereof.
  • the joining member 50 joins the base member 30 and the lid member 40. Specifically, the joining member 50 joins the protective film 39 and the facing surface 43B, and joins the upper surface electrode 33c and the facing surface 43B. Further, the joining member 50 seals a recess 49 corresponding to an internal space. Specifically, the joining member 50 is provided over the entire circumference of each outer edge portion of the base member 30 and the lid member 40, and has a rectangular frame shape so as to surround the crystal vibrating element 10.
  • the joining member 50 is a conductive adhesive that electrically connects the grounding electrode and the lid member 40.
  • the joining member 50 is in contact with the upper surface electrode 33c and the facing surface 43B.
  • the joining member 50 is formed by adding a conductive filler to, for example, a resin-based adhesive containing a thermosetting resin.
  • the thermosetting resin used for the conductive adhesive is, for example, an epoxy-based, vinyl-based, acrylic-based, urethane-based, imide-based or silicone-based resin.
  • the joining member 50 may contain a photocurable resin.
  • the conductive filler contained in the joining member 50 having isotropic conductivity is, for example, silver particles.
  • the joining member 50 is an anisotropic conductive adhesive. That is, the joining member 50 may have conductivity along the Y'axis direction and insulation along the XZ'plane.
  • the conductive filler contained in the joining member 50 having anisotropic conductivity as described above is, for example, particles obtained by coating a spherical core made of resin with a metal film, and is sandwiched between the upper surface electrode 33c and the facing surface 43B.
  • Tp be the thickness of the protective film 39 along the Y'axis direction
  • T be the thickness of the joining member 50 between the base member 30 and the facing surface 43B along the Y'axis direction.
  • Tb' The elastic modulus of the protective film 39 at 30 ° C. is defined as Ep
  • Eb The elastic modulus of the joining member 50 at 30 ° C.
  • the elastic moduli Ep and Eb are measured by a measuring method according to JIS K 7244-4 "Plastic-Dynamic mechanical property test method-Part 4: Tension vibration-Non-resonant method".
  • the elastic moduli Ep and Eb are measured under the following conditions using, for example, a dynamic viscoelasticity measuring device DMS6100 manufactured by SII Nanotechnology Co., Ltd. Pull mode 1Hz Temperature rise: 5 ° C / min Atmosphere: Nitrogen gas 150 ml / min
  • the elastic modulus Eb and the thickness T satisfy the relationship of 0.5 GPa ⁇ Eb ⁇ 4.0 GPa and 10 ⁇ m ⁇ T ⁇ 50 ⁇ m. Therefore, the thickness Tb also satisfies the relationship of 10 ⁇ m ⁇ Tb ⁇ 50 ⁇ m, and the thickness Tb ′ also satisfies the relationship of 10 ⁇ m ⁇ Tb ⁇ 50 ⁇ m. If the elastic modulus Eb is smaller than 0.5 GPa, sufficient mechanical strength may not be obtained and defective products may occur. If the elastic modulus Eb is larger than 4.0 GPa, the shear strength is lowered, and the lid member 40 may be peeled off from the base member 30 due to an impact such as dropping, resulting in a defective product.
  • the thickness T is smaller than 10 ⁇ m, defective products may occur due to a decrease in shear strength. If the thickness T is larger than 50 ⁇ m, the sealing property may be impaired. It is desirable that the elastic modulus Ep and the thicknesses Tp and Tb satisfy the relationship of 0.5 GPa ⁇ Ep ⁇ 4.0 GPa and 20 ⁇ m ⁇ Tp + Tb ⁇ 50 ⁇ m. Hereinafter, Tp + Tb will be referred to as "total film thickness".
  • the thickness Tb may be smaller than 10 ⁇ m.
  • the elastic moduli Ep, Eb and the thicknesses Tp, Tb satisfy the relationship of 0.5 GPa ⁇ (Ep ⁇ Tp + Eb ⁇ Tb) / (Tp + Tb) ⁇ 4.0 GPa and 20 ⁇ m ⁇ Tp + Tb ⁇ 50 ⁇ m.
  • (Ep ⁇ Tp + Eb ⁇ Tb) / (Tp + Tb) will be referred to as “synthetic elastic modulus”. If the synthetic elastic modulus is smaller than 0.5 GPa, sufficient mechanical strength cannot be obtained.
  • the synthetic elastic modulus is larger than 4.0 GPa, defective products may occur due to a decrease in share strength. If the total film thickness is smaller than 20 ⁇ m, defective products may occur due to a decrease in shear strength. If the total film thickness is larger than 50 ⁇ m, the sealing property may be impaired. It is desirable that the elastic moduli Ep, Eb and the thicknesses Tp, Tb satisfy the relationship of 1.5 GPa ⁇ (Ep ⁇ Tp + Eb ⁇ Tb) / (Tp + Tb) ⁇ 4.0 GPa.
  • Tp and Tb satisfy the relationship of Tb ⁇ Tp. Further, it is desirable that the elastic moduli Ep and Eb satisfy the relationship of Ep ⁇ Eb.
  • FIG. 5 is a table summarizing the share strengths of Examples and Comparative Examples.
  • Example 1 The elastic modulus Eb is 4.0 GPa and the thickness Tb is 10 ⁇ m.
  • the protective film 39 is omitted, the synthetic elastic modulus is 4.0 GPa, and the total film thickness is 10 ⁇ m. At this time, the share strength was 16N.
  • the elastic modulus Eb is 4.0 GPa and the thickness Tb is 5 ⁇ m.
  • the elastic modulus Ep is 4.0 GPa and the thickness Tp is 20 ⁇ m.
  • the synthetic elastic modulus is 4.0 GPa and the total film thickness is 25 ⁇ m. At this time, the share strength was 19N.
  • the elastic modulus Eb is 4.0 GPa and the thickness Tb is 5 ⁇ m.
  • the elastic modulus Ep is 1.0 GPa and the thickness Tp is 20 ⁇ m.
  • the synthetic elastic modulus is 1.6 GPa and the total film thickness is 25 ⁇ m. At this time, the share strength was 22N.
  • the elastic modulus Eb is 4.0 GPa and the thickness Tb is 5 ⁇ m.
  • the protective film 39 is omitted, the synthetic elastic modulus is 4.0 GPa, and the total film thickness is 5 ⁇ m. At this time, the share strength was 10N.
  • the elastic modulus Eb is 4.0 GPa and the thickness Tb is 5 ⁇ m.
  • the elastic modulus Ep is 10.0 GPa and the thickness Tp is 20 ⁇ m.
  • the synthetic elastic modulus is 8.8 GPa and the total film thickness is 25 ⁇ m. At this time, the share strength was 12N.
  • a non-conductive adhesive was used as the joining member, and the shear strength of a crystal unit having a sufficient shear strength was measured as a comparative example.
  • the elastic modulus Eb is 4.0 GPa and the thickness Tb is 5 ⁇ m.
  • the elastic modulus Ep is 4.0 GPa and the thickness Tp is 10 ⁇ m.
  • the synthetic elastic modulus is 4.0 GPa and the total film thickness is 15 ⁇ m. At this time, the share strength was 18N.
  • the share strength of Comparative Examples 1 and 2 is 30% or more lower than that of Comparative Example.
  • the share strength of Example 1 is about 90% of the share strength of Comparative Example.
  • the share strength of Examples 2 to 3 is larger than the share strength of Comparative Example. As described above, it was found that sufficient share strength can be obtained in Examples 1 to 3.
  • the elastic modulus Eb and the thickness Tb satisfy the relationship of 0.5 GPa ⁇ Eb ⁇ 4.0 GPa and 10 ⁇ m ⁇ T ⁇ 50 ⁇ m.
  • the elastic modulus Eb, the elastic modulus Ep, the thickness Tb, and the thickness Tb satisfy the relationship of 0.5 GPa ⁇ (Ep ⁇ Tp + Eb ⁇ Tb) / (Tp + Tb) ⁇ 4.0 GPa and 20 ⁇ m ⁇ Tp + Tb ⁇ 50 ⁇ m. ..
  • the crystal vibrating element, the base member on which the crystal vibrating element is mounted, and the base member are joined by sandwiching a bonding member of a conductive adhesive between the base member.
  • a lid member of a conductive material forming an internal space in which a crystal oscillator is arranged is provided, and the lid member has a top wall portion and a side wall portion extending from an outer edge of the top wall portion toward a base member.
  • the side wall portion has a facing surface facing the base member, and the base member is provided with a feeding electrode to which a crystal oscillator is connected and a grounding electrode used for grounding. It is electrically connected to the lid member via the joining member, and the elastic coefficient Eb of the joining member at 30 ° C.
  • the thickness T of the joining member between the base member and the facing surface are 0.5 GPa ⁇ Eb ⁇ .
  • a crystal oscillator that satisfies the relationship of 4.0 GPa and 10 ⁇ m ⁇ T ⁇ 50 ⁇ m. According to this, while the generation of noise due to the inflow and outflow of electromagnetic waves is suppressed by grounding the lid member via the joining member, the generation of defective products due to the decrease in shear strength and the decrease in sealing property due to the joining member is prevented. Can be suppressed.
  • the base member is provided with a protective film of an insulating material that covers at least the region of the feeding electrode facing the facing surface, and the protective film is in contact with the joining member and is a protective film at 30 ° C.
  • the elastic modulus Ep, the thickness Tp of the protective film between the feeding electrode and the facing surface, and the thickness Tb of the joining member between the feeding electrode and the facing surface are 0.5 GPa ⁇ Ep ⁇ 4.0 GPa and , 20 ⁇ m ⁇ Tp + Tb ⁇ 50 ⁇ m.
  • the crystal vibrating element, the base member on which the crystal vibrating element is mounted, and the base member are joined by sandwiching a joining member of a conductive adhesive, and the base member is joined.
  • a lid member made of a conductive material that forms an internal space in which a crystal vibrating element is arranged is provided, and the lid member comprises a top wall portion and a side wall portion extending from the outer edge of the top wall portion toward the base member.
  • the side wall portion has a facing surface facing the base member
  • the base member has a feeding electrode to which a crystal oscillator is connected, a grounding electrode used for grounding, and at least facing the facing surface.
  • a protective film of an insulating material covering the region of the power feeding electrode is provided, and the ground electrode and the protective film are in contact with the joining member, and the elastic coefficient Eb of the joining member at 30 ° C. and the protective film at 30 ° C.
  • the elastic coefficient Ep of the above, the thickness Tb of the joining member between the feeding electrode and the facing surface, and the thickness Tb of the protective film between the feeding electrode and the facing surface are 0.5 GPa ⁇ (Ep ⁇ Tp + Eb).
  • a crystal oscillator that satisfies the relationship of ⁇ Tb) / (Tp + Tb) ⁇ 4.0 GPa and 20 ⁇ m ⁇ Tp + Tb ⁇ 50 ⁇ m is provided.
  • the protective film is a solder resist.
  • the joining member is an anisotropic conductive adhesive.
  • the embodiment according to the present invention is not limited to the crystal unit, and can be applied to the piezoelectric unit.
  • An example of a piezoelectric vibrator is a crystal oscillator (Quartz Crystal Resnotor Unit) provided with a crystal vibrating element (Quartz Crystal Resonator).
  • the crystal vibrating element uses a crystal piece (Quartz Crystal Element) as a piezoelectric piece excited by the piezoelectric effect, and the piezoelectric piece is an arbitrary such as a piezoelectric single crystal, a piezoelectric ceramic, a piezoelectric thin film, or a piezoelectric polymer film. It may be formed by the piezoelectric material of.
  • the piezoelectric single crystal can include lithium niobate (LiNbO 3 ).
  • the piezoelectric ceramic is barium titanate (BaTiO 3), lead titanate (PbTiO 3), lead zirconate titanate (Pb (Zr x Ti 1- x) O 3; PZT), aluminum nitride (AlN), Lithium niobate (LiNbO 3 ), lithium metaniobate (LiNb 2 O 6 ), bismuth titanate (Bi 4 Ti 3 O 12 ), lithium tantalate (LiTaO 3 ), lithium tetraborate (Li 2 B 4 O 7 ) , Langasite (La 3 Ga 5 SiO 14 ), tantalate pentoxide (Ta 2 O 5 ), and the like.
  • Examples of the piezoelectric thin film include those obtained by forming the above-mentioned piezoelectric ceramic on a substrate such as quartz or sapphire by a sputtering method or the like.
  • Examples of the piezoelectric polymer film include polylactic acid (PLA), polyvinylidene fluoride (PVDF), and vinylidene fluoride / ethylene trifluoride (VDF / TrFE) copolymer.
  • PVA polylactic acid
  • PVDF polyvinylidene fluoride
  • VDF / TrFE vinylidene fluoride / ethylene trifluoride copolymer.
  • the above-mentioned various piezoelectric materials may be used by being laminated with each other, or may be laminated with another member.
  • the embodiment according to the present invention can be appropriately applied without particular limitation as long as it is a device that converts electromechanical energy by a piezoelectric effect, such as a timing device, a sounding device, an oscillator, and a load sensor.

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Abstract

A piezoelectric vibrator (1) comprises a piezoelectric vibration element (10), a base member (30), an electrically conductive adhesive bonding member (50), and a lid member (40) of electrically conductive material. The lid member (40) has an opposing surface (43B) opposing the base member (30). The base member (30) has a feeding electrode and a grounding electrode. The grounding electrode is electrically connected to the lid member (40) with the bonding member (50) therebetween. The elastic modulus Eb of the bonding member at 30℃ and the thickness T of the bonding member between the base member (30) and the opposing surface (43B) satisfy the relations 0.5 GPa ≤ Eb ≤ 4.0 GPa and 10 μm ≤ T ≤ 50 μm.

Description

圧電振動子Piezoelectric oscillator
　本発明は、圧電振動子に関する。 The present invention relates to a piezoelectric vibrator.
　振動子は、移動通信端末、通信基地局、家電などの各種電子機器において、タイミングデバイス、センサ、発振器などの用途に用いられている。電子機器の高機能化に伴い、安価で高性能な振動素子が求められている。 Oscillators are used in various electronic devices such as mobile communication terminals, communication base stations, and home appliances for applications such as timing devices, sensors, and oscillators. With the increasing functionality of electronic devices, inexpensive and high-performance vibrating elements are required.
　特許文献１には、ベース部材と金属製の蓋部材とを導電性接着剤を介して接合し、この導電性接着剤によって蓋部材をベース部材の接地用電極に電気的に接続し、電磁波の出入りによるノイズを抑制した水晶振動子が開示されている。 In Patent Document 1, a base member and a metal lid member are joined via a conductive adhesive, and the lid member is electrically connected to the grounding electrode of the base member by the conductive adhesive to generate electromagnetic waves. A crystal transducer that suppresses noise due to entering and exiting is disclosed.
特開２０１５－２２０７４９号公報Japanese Unexamined Patent Publication No. 2015-220749
　しかしながら、導電性接着剤の接合強度は、非導電性接着剤の接合強度に比べて低い傾向にあり、特許文献１に記載の水晶振動子では、接合強度の不足により蓋部材がベース部材から剥落する場合がある。 However, the bonding strength of the conductive adhesive tends to be lower than the bonding strength of the non-conductive adhesive, and in the crystal transducer described in Patent Document 1, the lid member is peeled off from the base member due to insufficient bonding strength. May be done.
　本発明はこのような事情に鑑みてなされたものであり、本発明の目的は、ノイズを抑制しつつ不良品の発生を抑制可能な圧電振動子の提供である。 The present invention has been made in view of such circumstances, and an object of the present invention is to provide a piezoelectric vibrator capable of suppressing the generation of defective products while suppressing noise.
　本発明の一態様に係る圧電振動子は、圧電振動素子と、圧電振動素子が搭載されたベース部材と、ベース部材との間に導電性接着剤の接合部材を挟んで接合され、ベース部材との間に圧電振動素子が配置された内部空間を形成する導電性材料の蓋部材と、を備え、蓋部材は、天壁部と、天壁部の外縁からベース部材に向かって延びる側壁部とを有し、側壁部は、ベース部材に対向する対向面を有し、ベース部材には、圧電振動素子が接続される給電用電極と、接地に用いられる接地用電極とが設けられ、接地用電極は、接合部材を介して蓋部材に電気的に接続されており、３０℃における接合部材の弾性率Ｅｂと、ベース部材と対向面との間における接合部材の厚みＴとは、０．５ＧＰａ≦Ｅｂ≦４．０ＧＰａ且つ、１０μｍ≦Ｔ≦５０μｍの関係を満たす。 The piezoelectric vibrator according to one aspect of the present invention is joined by sandwiching a conductive adhesive joining member between the piezoelectric vibrating element, the base member on which the piezoelectric vibrating element is mounted, and the base member, and is joined to the base member. A lid member made of a conductive material that forms an internal space in which a piezoelectric vibrating element is arranged is provided, and the lid member includes a top wall portion and a side wall portion extending from the outer edge of the top wall portion toward the base member. The side wall portion has a facing surface facing the base member, and the base member is provided with a feeding electrode to which a piezoelectric vibrating element is connected and a grounding electrode used for grounding. The electrodes are electrically connected to the lid member via the joining member, and the elastic coefficient Eb of the joining member at 30 ° C. and the thickness T of the joining member between the base member and the facing surface are 0.5 GPa. The relationship of ≦ Eb ≦ 4.0 GPa and 10 μm ≦ T ≦ 50 μm is satisfied.
　本発明の一態様に係る圧電振動子は、圧電振動素子と、圧電振動素子が搭載されたベース部材と、ベース部材との間に導電性接着剤の接合部材を挟んで接合され、ベース部材との間に圧電振動素子が配置された内部空間を形成する導電性材料の蓋部材と、を備え、蓋部材は、天壁部と、天壁部の外縁からベース部材に向かって延びる側壁部とを有し、側壁部は、ベース部材に対向する対向面を有し、ベース部材には、圧電振動素子が接続される給電用電極と、接地に用いられる接地用電極と、少なくとも対向面と対向する給電用電極の領域を覆う絶縁性材料の保護膜とが設けられ、接地用電極及び保護膜は、接合部材と接触しており、３０℃における接合部材の弾性率Ｅｂと、３０℃における保護膜の弾性率Ｅｐと、給電用電極と対向面との間における接合部材の厚みＴｂと、給電用電極と対向面との間における保護膜の厚みＴｐとは、０．５ＧＰａ≦（Ｅｐ×Ｔｐ＋Ｅｂ×Ｔｂ）／（Ｔｐ＋Ｔｂ）≦４．０ＧＰａ且つ、２０μｍ≦Ｔｐ＋Ｔｂ≦５０μｍの関係を満たす。 The piezoelectric vibrator according to one aspect of the present invention is joined by sandwiching a joining member of a conductive adhesive between a piezoelectric vibrating element, a base member on which the piezoelectric vibrating element is mounted, and a base member, and is joined to the base member. A lid member made of a conductive material that forms an internal space in which a piezoelectric vibrating element is arranged is provided, and the lid member includes a top wall portion and a side wall portion extending from the outer edge of the top wall portion toward the base member. The side wall portion has a facing surface facing the base member, and the base member has a power feeding electrode to which a piezoelectric vibrating element is connected, a grounding electrode used for grounding, and at least facing the facing surface. A protective film of an insulating material is provided to cover the region of the power feeding electrode, and the ground electrode and the protective film are in contact with the joining member, and the elastic coefficient Eb of the joining member at 30 ° C. and protection at 30 ° C. The elastic coefficient Ep of the film, the thickness Tb of the joining member between the feeding electrode and the facing surface, and the thickness Tp of the protective film between the feeding electrode and the facing surface are 0.5 GPa ≦ (Ep × Tp + Eb). × Tb) / (Tp + Tb) ≦ 4.0 GPa and 20 μm ≦ Tp + Tb ≦ 50 μm are satisfied.
　本発明によれば、ノイズを抑制しつつ不良品の発生を抑制可能な圧電振動子を提供できる。 According to the present invention, it is possible to provide a piezoelectric vibrator capable of suppressing the generation of defective products while suppressing noise.
第１実施形態に係る水晶振動子の構成を概略的に示す分解斜視図である。It is an exploded perspective view which shows schematic structure of the crystal oscillator which concerns on 1st Embodiment. 第１実施形態に係る水晶振動子の構成を概略的に示す平面図である。It is a top view which shows schematic structure of the crystal oscillator which concerns on 1st Embodiment. 第１実施形態に係る水晶振動子の構成を概略的に示す断面図である。It is sectional drawing which shows schematic the structure of the crystal oscillator which concerns on 1st Embodiment. ベース部材及び水晶振動素子の構成を概略的に示す平面図である。It is a top view which shows roughly the structure of the base member and the crystal vibration element. 実施例及び比較例のシェア強度をまとめた表である。It is a table summarizing the share strength of an Example and a comparative example.
　以下、図面を参照しながら本発明の実施形態について説明する。各実施形態の図面は例示であり、各部の寸法や形状は模式的なものであり、本願発明の技術的範囲を当該実施形態に限定して解するべきではない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings of each embodiment are examples, and the dimensions and shapes of each part are schematic, and the technical scope of the present invention should not be limited to the embodiment.
　＜第１実施形態＞
　図１～図４を参照しつつ、本発明の第１実施形態に係る水晶振動子１の構成について説明する。図１は、第１実施形態に係る水晶振動子の構成を概略的に示す分解斜視図である。図２は、第１実施形態に係る水晶振動子の構成を概略的に示す平面図である。図３は、第１実施形態に係る水晶振動子の構成を概略的に示す断面図である。図４は、ベース部材及び水晶振動素子の構成を概略的に示す平面図である。なお、図３は、図２に示した水晶振動子１のＩＩＩ－ＩＩＩ線に沿った断面図である。 <First Embodiment>
The configuration of the crystal oscillator 1 according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 4. FIG. 1 is an exploded perspective view schematically showing the configuration of the crystal oscillator according to the first embodiment. FIG. 2 is a plan view schematically showing the configuration of the crystal oscillator according to the first embodiment. FIG. 3 is a cross-sectional view schematically showing the configuration of the crystal oscillator according to the first embodiment. FIG. 4 is a plan view schematically showing the configurations of the base member and the crystal vibrating element. Note that FIG. 3 is a cross-sectional view taken along the line III-III of the crystal oscillator 1 shown in FIG.
　各々の図面には、各々の図面相互の関係を明確にし、各部材の位置関係を理解する助けとするために、便宜的にＸ軸、Ｙ´軸及びＺ´軸からなる直交座標系を付すことがある。Ｘ軸、Ｙ´軸及びＺ´軸は各図面において互いに対応している。Ｘ軸、Ｙ´軸及びＺ´軸は、それぞれ、後述の水晶片１１の結晶軸（Ｃｒｙｓｔａｌｌｏｇｒａｐｈｉｃ　Ａｘｅｓ）に関係している。Ｘ軸が水晶結晶の電気軸（極性軸）、Ｙ軸が水晶結晶の機械軸、Ｚ軸が水晶結晶の光学軸に相当する。Ｙ´軸及びＺ´軸は、それぞれ、Ｙ軸及びＺ軸をＸ軸の周りにＹ軸からＺ軸の方向に３５度１５分±１分３０秒回転させた軸である。 Each drawing is provided with a Cartesian coordinate system consisting of the X-axis, Y'axis and Z'axis for convenience to clarify the relationship between the drawings and to help understand the positional relationship of each member. Sometimes. The X-axis, Y'axis and Z'axis correspond to each other in the drawings. The X-axis, Y'axis, and Z'axis are each related to the crystallographic axes of the crystal piece 11 described later. The X-axis corresponds to the electric axis (polar axis) of the quartz crystal, the Y-axis corresponds to the mechanical axis of the quartz crystal, and the Z-axis corresponds to the optical axis of the quartz crystal. The Y'axis and the Z'axis are axes obtained by rotating the Y axis and the Z axis around the X axis in the direction of the Y axis to the Z axis by 35 degrees 15 minutes ± 1 minute 30 seconds, respectively.
　以下の説明において、Ｘ軸に平行な方向を「Ｘ軸方向」、Ｙ´軸に平行な方向を「Ｙ´軸方向」、Ｚ´軸に平行な方向を「Ｚ´軸方向」という。また、Ｘ軸、Ｙ´軸及びＺ´軸の矢印の先端方向を「＋（プラス）」、矢印とは反対の方向を「－（マイナス）」という。なお、便宜的に、＋Ｙ´軸方向を上方向、－Ｙ´軸方向を下方向として説明するが、水晶振動子１の上下の向きは限定されるものではない。 In the following description, the direction parallel to the X axis is referred to as "X axis direction", the direction parallel to the Y'axis is referred to as "Y'axis direction", and the direction parallel to the Z'axis is referred to as "Z'axis direction". The direction of the tip of the arrow on the X-axis, Y'axis, and Z'axis is called "+ (plus)", and the direction opposite to the arrow is called "-(minus)". For convenience, the + Y'axis direction will be described as an upward direction, and the −Y'axis direction will be described as a downward direction, but the vertical direction of the crystal oscillator 1 is not limited.
　水晶振動子１は、水晶振動素子１０と、ベース部材３０と、蓋部材４０と、接合部材５０とを備えている。水晶振動素子１０は、ベース部材３０と蓋部材４０との間に設けられている。ベース部材３０及び蓋部材４０は、水晶振動素子１０を収容するための保持器を構成しており、Ｙ´軸方向に沿って重なっている。水晶振動素子１０は、ベース部材３０に搭載されている。 The crystal oscillator 1 includes a crystal vibrating element 10, a base member 30, a lid member 40, and a joining member 50. The crystal vibrating element 10 is provided between the base member 30 and the lid member 40. The base member 30 and the lid member 40 form a cage for accommodating the crystal vibrating element 10, and are overlapped along the Y'axis direction. The crystal vibrating element 10 is mounted on the base member 30.
　まず、水晶振動素子１０について説明する。
　水晶振動素子１０は、圧電効果により水晶を振動させ、電気エネルギーと機械エネルギーとを変換する素子である。水晶振動素子１０は、薄片状の水晶片１１と、一対の励振電極を構成する第１励振電極１４ａ及び第２励振電極１４ｂと、一対の引出電極を構成する第１引出電極１５ａ及び第２引出電極１５ｂと、一対の接続電極を構成する第１接続電極１６ａ及び第２接続電極１６ｂとを備えている。 First, the crystal vibrating element 10 will be described.
The crystal vibrating element 10 is an element that vibrates a crystal by a piezoelectric effect and converts electrical energy and mechanical energy. The crystal vibrating element 10 includes a flaky crystal piece 11, a first excitation electrode 14a and a second excitation electrode 14b constituting a pair of excitation electrodes, and a first extraction electrode 15a and a second extraction electrode forming a pair of extraction electrodes. It includes an electrode 15b, and a first connection electrode 16a and a second connection electrode 16b forming a pair of connection electrodes.
　水晶片１１は、互いに対向する上面１１Ａ及び下面１１Ｂを有している。上面１１Ａは、ベース部材３０に対向する側とは反対側、すなわち後述する蓋部材４０の天壁部４１に対向する側に位置している。下面１１Ｂは、ベース部材３０に対向する側に位置している。 The crystal piece 11 has an upper surface 11A and a lower surface 11B facing each other. The upper surface 11A is located on the side opposite to the side facing the base member 30, that is, the side facing the top wall portion 41 of the lid member 40 described later. The lower surface 11B is located on the side facing the base member 30.
　水晶片１１は、例えば、ＡＴカット型の水晶結晶である。ＡＴカット型の水晶片１１は、互いに交差するＸ軸、Ｙ´軸、及びＺ´軸からなる直交座標系において、Ｘ軸及びＺ´軸によって特定される面と平行な面（以下、「ＸＺ´面」と呼ぶ。他の軸によって特定される面についても同様である。）が主面となり、Ｙ´軸と平行な方向が厚さとなるように形成される。 The crystal piece 11 is, for example, an AT-cut type crystal crystal. The AT-cut type crystal piece 11 is a plane parallel to a plane specified by the X-axis and the Z'axis in a Cartesian coordinate system consisting of an X-axis, a Y'axis, and a Z'axis that intersect each other (hereinafter, "XZ". It is called a'plane'. The same applies to a plane specified by another axis.) Is the main surface, and is formed so that the direction parallel to the Y'axis is the thickness.
　ＡＴカット型の水晶片１１を用いた水晶振動素子１０は、広い温度範囲で高い周波数安定性を有する。ＡＴカット型の水晶振動素子１０では、厚みすべり振動モード（Ｔｈｉｃｋｎｅｓｓ　Ｓｈｅａｒ　Ｖｉｂｒａｔｉｏｎ　Ｍｏｄｅ）が主要振動として用いられる。水晶片１１は、ＡＴカット以外の異なるカットを適用してもよい。例えばＢＴカット、ＧＴカット、ＳＣカットなどを適用してよい。また、水晶振動素子は、Ｚ板と呼ばれるカット角の水晶片を用いた音叉型水晶振動素子であってもよい。 The crystal vibrating element 10 using the AT-cut type crystal piece 11 has high frequency stability in a wide temperature range. In the AT-cut type crystal vibration element 10, the thickness slip vibration mode (Thickness Shear Vibration Mode) is used as the main vibration. A different cut other than the AT cut may be applied to the crystal piece 11. For example, BT cut, GT cut, SC cut and the like may be applied. Further, the crystal vibrating element may be a tuning fork type crystal vibrating element using a crystal piece having a cut angle called a Z plate.
　一例として、水晶片１１は、Ｘ軸方向に平行な長辺が延在する長辺方向と、Ｚ´軸方向に平行な短辺が延在する短辺方向と、Ｙ´軸方向に平行な厚さが延在する厚さ方向を有する平板状である。水晶片１１の上面１１Ａを平面視したとき、水晶片１１の平面形状は矩形状をなしている。 As an example, the crystal piece 11 is parallel to the long side direction in which the long side parallel to the X-axis direction extends, the short side direction in which the short side parallel to the Z'axis direction extends, and the Y'axis direction. It is a flat plate having a thickness direction in which the thickness extends. When the upper surface 11A of the crystal piece 11 is viewed in a plane, the plane shape of the crystal piece 11 is rectangular.
　水晶片１１は、平板状に限定されるものではなく、メサ型構造や逆メサ型構造であってもよい。この場合、水晶片１１は、厚みが連続的に変化するテーパ形状、厚みが不連続に変化する階段形状、厚みの変化量が連続的に変化するコンベックス形状、又は厚みの変化量が不連続に変化するベベル形状であってもよい。 The crystal piece 11 is not limited to a flat plate shape, and may have a mesa-shaped structure or an inverted mesa-shaped structure. In this case, the crystal piece 11 has a tapered shape in which the thickness changes continuously, a staircase shape in which the thickness changes discontinuously, a convex shape in which the amount of change in thickness continuously changes, or a convex shape in which the amount of change in thickness changes discontinuously. It may have a changing bevel shape.
　第１励振電極１４ａは水晶片１１の上面１１Ａに設けられ、第２励振電極１４ｂは水晶片１１の下面１１Ｂに設けられている。第１励振電極１４ａ及び第２励振電極１４ｂは、水晶片１１を挟んで互いに対向している。水晶片１１の上面１１Ａを平面視したとき、第１励振電極１４ａ及び第２励振電極１４ｂは、それぞれ矩形状をなしており、互いの略全体が重なり合うように配置されている。 The first excitation electrode 14a is provided on the upper surface 11A of the crystal piece 11, and the second excitation electrode 14b is provided on the lower surface 11B of the crystal piece 11. The first excitation electrode 14a and the second excitation electrode 14b face each other with the crystal piece 11 interposed therebetween. When the upper surface 11A of the crystal piece 11 is viewed in a plan view, the first excitation electrode 14a and the second excitation electrode 14b each have a rectangular shape, and are arranged so that substantially the entire surface of the crystal piece 11 overlaps with each other.
　第１引出電極１５ａは水晶片１１の上面１１Ａに設けられ、第２引出電極１５ｂは水晶片１１の下面１１Ｂに設けられている。第１引出電極１５ａは、第１励振電極１４ａと第１接続電極１６ａとを電気的に接続している。第２引出電極１５ｂは、第２励振電極１４ｂと第２接続電極１６ｂとを電気的に接続している。 The first extraction electrode 15a is provided on the upper surface 11A of the crystal piece 11, and the second extraction electrode 15b is provided on the lower surface 11B of the crystal piece 11. The first extraction electrode 15a electrically connects the first excitation electrode 14a and the first connection electrode 16a. The second extraction electrode 15b electrically connects the second excitation electrode 14b and the second connection electrode 16b.
　第１接続電極１６ａ及び第２接続電極１６ｂは、それぞれ、第１励振電極１４ａ及び第２励振電極１４ｂをベース部材３０に電気的に接続するための電極であり、水晶片１１の下面１１Ｂに設けられている。 The first connection electrode 16a and the second connection electrode 16b are electrodes for electrically connecting the first excitation electrode 14a and the second excitation electrode 14b to the base member 30, respectively, and are provided on the lower surface 11B of the crystal piece 11. Has been done.
　励振電極、引出電極及び接続電極は、例えば、水晶片１１との密着性が良好な下地層と、化学的安定性が良好な最表層とからなる積層体である。励振電極、引出電極及び接続電極を構成する材料は、例えば、クロム（Ｃｒ）、金（Ａｕ）、チタン（Ｔｉ）、モリブデン（Ｍｏ）、アルミニウム（Ａｌ）、ニッケル（Ｎｉ）、インジウム（Ｉｎ）、パラジウム（Ｐｄ）、銀（Ａｇ）、銅（Ｃｕ）、錫（Ｓｎ）、鉄（Ｆｅ）などの金属材料から好適に選択される。励振電極、引出電極及び接続電極は、導電性セラミック、導電性樹脂、半導体などを含有してもよい。 The excitation electrode, the extraction electrode, and the connection electrode are, for example, a laminate composed of a base layer having good adhesion to the crystal piece 11 and an outermost layer having good chemical stability. The materials constituting the excitation electrode, the extraction electrode and the connection electrode are, for example, chromium (Cr), gold (Au), titanium (Ti), molybdenum (Mo), aluminum (Al), nickel (Ni), and indium (In). , Palladium (Pd), silver (Ag), copper (Cu), tin (Sn), iron (Fe) and other metallic materials are preferably selected. The excitation electrode, the extraction electrode, and the connection electrode may contain a conductive ceramic, a conductive resin, a semiconductor, or the like.
　次に、ベース部材３０について説明する。
　ベース部材３０は、平板状の基体３１と、一対の電極パッドを構成する第１電極パッド３３ａ及び第２電極パッド３３ｂと、上面電極３３ｃと、第１側面電極３４ａと、第２側面電極３４ｂと、第３側面電極３４ｃと、第４側面電極３４ｄと、第１外部電極３５ａと、第２外部電極３５ｂと、第３外部電極３５ｃと、第４外部電極３５ｄと、保護膜３９とを備えている。 Next, the base member 30 will be described.
The base member 30 includes a flat plate-shaped substrate 31, a first electrode pad 33a and a second electrode pad 33b forming a pair of electrode pads, a top electrode 33c, a first side electrode 34a, and a second side electrode 34b. A third side electrode 34c, a fourth side electrode 34d, a first external electrode 35a, a second external electrode 35b, a third external electrode 35c, a fourth external electrode 35d, and a protective film 39 are provided. There is.
　基体３１は、互いに対向する上面３１Ａ及び下面３１Ｂを有している。上面３１Ａ及び下面３１Ｂは、基体３１の一対の主面に相当する。上面３１Ａは、水晶振動素子１０及び蓋部材４０に対向する側に位置し、下面３１Ｂは、例えば、水晶振動子１を外部の回路基板に実装する際に、当該回路基板に対向する側に位置する。基体３１は、例えば絶縁性セラミック（アルミナ）などの焼結材であるが、水晶やシリコンによって設けられてもよい。 The substrate 31 has an upper surface 31A and a lower surface 31B facing each other. The upper surface 31A and the lower surface 31B correspond to a pair of main surfaces of the substrate 31. The upper surface 31A is located on the side facing the crystal vibrating element 10 and the lid member 40, and the lower surface 31B is located on the side facing the circuit board when the crystal oscillator 1 is mounted on an external circuit board, for example. do. The substrate 31 is a sintered material such as insulating ceramic (alumina), but may be provided by quartz or silicon.
　上面３１Ａを平面視したとき、基体３１は、Ｘ軸方向に延びてＺ´軸方向において対向する一対の長辺と、Ｚ´軸方向に延びてＸ軸方向において対向する一対の短辺とを有している。基体３１の４つの角部には扇状の凹部が設けられている。この凹部は、上面３１Ａから下面３１Ｂに亘って基体３１を貫通する貫通孔を分割したものである。 When the upper surface 31A is viewed in a plan view, the substrate 31 has a pair of long sides extending in the X-axis direction and facing each other in the Z'axis direction, and a pair of short sides extending in the Z'axis direction and facing each other in the X-axis direction. Have. Fan-shaped recesses are provided at the four corners of the substrate 31. This recess is formed by dividing a through hole penetrating the substrate 31 from the upper surface 31A to the lower surface 31B.
　第１電極パッド３３ａ及び第２電極パッド３３ｂは、基体３１の上面３１Ａに設けられている。第１電極パッド３３ａ及び第２電極パッド３３ｂは、ベース部材３０に水晶振動素子１０を電気的に接続するための端子である。 The first electrode pad 33a and the second electrode pad 33b are provided on the upper surface 31A of the substrate 31. The first electrode pad 33a and the second electrode pad 33b are terminals for electrically connecting the crystal vibrating element 10 to the base member 30.
　上面電極３３ｃは、蓋部材４０と電気的に接続される電極である。上面電極３３ｃは、ベース部材３０の＋Ｘ軸方向側且つ－Ｚ´軸方向側の角部に設けられ、ベース部材３０の蓋部材４０側の最表面に位置している。 The top electrode 33c is an electrode that is electrically connected to the lid member 40. The upper surface electrode 33c is provided at the corners of the base member 30 on the + X axis direction side and the −Z ′ axis direction side, and is located on the outermost surface of the base member 30 on the lid member 40 side.
　第１側面電極３４ａ～第４側面電極３４ｄは、ベース部材３０の側面部に設けられている。具体的には、基体３１の角部に設けられた凹部の上面３１Ａ側の端部から下面３１Ｂ側の端部に亘って設けられ、基体３１の凹部を覆っている。第１側面電極３４ａ～第４側面電極３４ｄのそれぞれは、キャスタレーション電極に相当する。第１側面電極３４ａは、ベース部材３０の－Ｘ軸方向側且つ＋Ｚ´軸方向側の角部に設けられた凹部に設けられている。第２側面電極３４ｂは、ベース部材３０の＋Ｘ軸方向側且つ－Ｚ´軸方向側の角部に設けられた凹部に設けられている。第３側面電極３４ｃは、ベース部材３０の＋Ｘ軸方向側且つ＋Ｚ´軸方向側の角部に設けられた凹部に設けられている。第４側面電極３４ｄは、ベース部材３０の－Ｘ軸方向側且つ－Ｚ´軸方向側の角部に設けられた凹部に設けられている。 The first side electrode 34a to the fourth side electrode 34d are provided on the side surface of the base member 30. Specifically, it is provided from the end on the upper surface 31A side to the end on the lower surface 31B side of the recess provided at the corner of the substrate 31 and covers the recess of the substrate 31. Each of the first side electrode 34a to the fourth side electrode 34d corresponds to a casting electrode. The first side surface electrode 34a is provided in a recess provided at a corner of the base member 30 on the −X axis direction side and the + Z ′ axis direction side. The second side surface electrode 34b is provided in a recess provided at a corner of the base member 30 on the + X axis direction side and the −Z ′ axis direction side. The third side electrode 34c is provided in a recess provided at a corner of the base member 30 on the + X axis direction side and the + Z'axis direction side. The fourth side electrode 34d is provided in a recess provided at a corner of the base member 30 on the −X axis direction side and the −Z ′ axis direction side.
　第１側面電極３４ａは、上面３１Ａに設けられた配線電極を介して第１電極パッド３３ａに電気的に接続され、第２側面電極３４ｂは、上面３１Ａに設けられた配線電極を介して第２電極パッド３３ｂに電気的に接続されてる。第３側面電極３４ｃは、上面電極３３ｃから連続的に設けられており、上面電極３３ｃと電気的に接続されている。第１側面電極３４ａ、第１電極パッド３３ａ及びこれらを接続する配線電極は、水晶振動素子１０が接続される給電用電極に相当する。第２側面電極３４ｂ、第２電極パッド３３ｂ及びこれらを接続する配線電極も同様に給電用電極に相当する。第３側面電極３４ｃ及び上面電極３３ｃは、蓋部材４０の接地に用いられる接地用電極に相当する。 The first side surface electrode 34a is electrically connected to the first electrode pad 33a via the wiring electrode provided on the upper surface 31A, and the second side surface electrode 34b is connected to the second side electrode 34b via the wiring electrode provided on the upper surface 31A. It is electrically connected to the electrode pad 33b. The third side surface electrode 34c is continuously provided from the top surface electrode 33c and is electrically connected to the top surface electrode 33c. The first side surface electrode 34a, the first electrode pad 33a, and the wiring electrode connecting them correspond to a feeding electrode to which the crystal vibration element 10 is connected. The second side surface electrode 34b, the second electrode pad 33b, and the wiring electrode connecting them also correspond to the feeding electrode. The third side electrode 34c and the top electrode 33c correspond to grounding electrodes used for grounding the lid member 40.
　給電用電極及び接地用電極は、例えば、基体３１との密着性が良好な下地層と、化学的安定性が良好な最表層とからなる積層体である。給電用電極及び接地用電極を構成する材料は、例えば、クロム（Ｃｒ）、金（Ａｕ）、チタン（Ｔｉ）、モリブデン（Ｍｏ）、アルミニウム（Ａｌ）、ニッケル（Ｎｉ）、インジウム（Ｉｎ）、パラジウム（Ｐｄ）、銀（Ａｇ）、銅（Ｃｕ）、錫（Ｓｎ）、鉄（Ｆｅ）などの金属材料から好適に選択される。給電用電極及び接地用電極は、導電性セラミック、導電性樹脂、半導体などを含有してもよい。 The power feeding electrode and the grounding electrode are, for example, a laminated body composed of a base layer having good adhesion to the substrate 31 and a surface layer having good chemical stability. The materials constituting the power feeding electrode and the grounding electrode are, for example, chromium (Cr), gold (Au), titanium (Ti), molybdenum (Mo), aluminum (Al), nickel (Ni), indium (In), and the like. It is preferably selected from metallic materials such as palladium (Pd), silver (Ag), copper (Cu), tin (Sn), and iron (Fe). The power feeding electrode and the grounding electrode may contain a conductive ceramic, a conductive resin, a semiconductor, or the like.
　第１外部電極３５ａ～第４外部電極３５ｄは、半田等によって水晶振動子１を外部の回路基板に実装するための電極である。第１外部電極３５ａ～第４外部電極３５ｄは、基体３１の下面３１Ｂに設けられている。第１外部電極３５ａは、ベース部材３０の－Ｘ軸方向側且つ＋Ｚ´軸方向側の角部に設けられ、第１側面電極３４ａに電気的に接続されている。第１外部電極３５ａは、ベース部材３０の＋Ｘ軸方向側且つ－Ｚ´軸方向側の角部に設けられ、第２側面電極３４ｂに電気的に接続されている。第３外部電極３５ｃは、ベース部材３０の＋Ｘ軸方向側且つ＋Ｚ´軸方向側の角部に設けられ、第３側面電極３４ｃに電気的に接続されている。第４外部電極３５ｄは、ベース部材３０の－Ｘ軸方向側且つ－Ｚ´軸方向側の角部に設けられ、第４側面電極３４ｄに電気的に接続されている。第１外部電極３５ａ及び第２外部電極３５ｂは、一対の給電用電極に電気信号を供給するために用いられる。第３外部電極３５ｃは、接地用電極を接地するために用いられる。第４外部電極３５ｄは、電気信号等が入出力されないダミー電極である。第４外部電極３５ｄは、第３外部電極３５ｃとともに蓋部材４０を接地するために用いられてもよく、省略されてもよい。 The first external electrode 35a to the fourth external electrode 35d are electrodes for mounting the crystal oscillator 1 on an external circuit board by soldering or the like. The first external electrode 35a to the fourth external electrode 35d are provided on the lower surface 31B of the substrate 31. The first external electrode 35a is provided at a corner of the base member 30 on the −X axis direction side and the + Z ′ axis direction side, and is electrically connected to the first side surface electrode 34a. The first external electrode 35a is provided at the corners of the base member 30 on the + X axis direction side and the −Z ′ axis direction side, and is electrically connected to the second side surface electrode 34b. The third external electrode 35c is provided at the corners of the base member 30 on the + X axis direction side and the + Z'axis direction side, and is electrically connected to the third side surface electrode 34c. The fourth external electrode 35d is provided at the corners of the base member 30 on the −X axis direction side and the −Z ′ axis direction side, and is electrically connected to the fourth side surface electrode 34d. The first external electrode 35a and the second external electrode 35b are used to supply an electric signal to the pair of feeding electrodes. The third external electrode 35c is used to ground the grounding electrode. The fourth external electrode 35d is a dummy electrode to which an electric signal or the like is not input / output. The fourth external electrode 35d may be used for grounding the lid member 40 together with the third external electrode 35c, or may be omitted.
　保護膜３９は、ベース部材３０の蓋部材４０と対向する側であって、接合部材５０に接触する領域に設けられている。保護膜３９は、給電用電極の一部を覆い、給電用電極と蓋部材４０とを電気的に絶縁している。具体的には、保護膜３９は、第１側面電極３４ａと第１電極パッド３３ａとを接続する配線電極を覆い、第２側面電極３４ｂと第２電極パッド３３ｂとを接続する配線電極を覆っている。保護膜３９は、上面電極３３ｃの外側の領域に設けられており、上面電極３３ｃは保護膜３９から露出している、保護膜３９は、例えばソルダーレジストである。 The protective film 39 is provided on the side of the base member 30 facing the lid member 40 and in a region in contact with the joining member 50. The protective film 39 covers a part of the feeding electrode and electrically insulates the feeding electrode and the lid member 40. Specifically, the protective film 39 covers the wiring electrode connecting the first side surface electrode 34a and the first electrode pad 33a, and covers the wiring electrode connecting the second side surface electrode 34b and the second electrode pad 33b. There is. The protective film 39 is provided in the outer region of the upper surface electrode 33c, and the upper surface electrode 33c is exposed from the protective film 39. The protective film 39 is, for example, a solder resist.
　なお、後述する接合部材５０が異方性導電性接着剤によって形成される場合、給電用電極に接合部材５０が接触したとしても、水晶振動素子１０と蓋部材４０との接合部材５０を介した短絡は生じ難いため、保護膜３９は省略されてもよい。 When the joining member 50 described later is formed of an anisotropic conductive adhesive, even if the joining member 50 comes into contact with the feeding electrode, the joining member 50 between the crystal vibration element 10 and the lid member 40 is interposed. Since short circuits are unlikely to occur, the protective film 39 may be omitted.
　ベース部材３０は、一対の導電性保持部材を構成する第１導電性保持部材３６ａ及び第２導電性保持部材３６ｂを備えている。第１導電性保持部材３６ａ及び第２導電性保持部材３６ｂは、ベース部材３０及び蓋部材４０から間隔を空けて水晶振動素子１０を保持している。第１導電性保持部材３６ａ及び第２導電性保持部材３６ｂは、水晶振動素子１０とベース部材３０とを電気的に接続している。具体的には、第１導電性保持部材３６ａが第１電極パッド３３ａと第１接続電極１６ａとを電気的に接続し、第２導電性保持部材３６ｂが第２電極パッド３３ｂと第２接続電極１６ｂとを電気的に接続している。第１導電性保持部材３６ａ及び第２導電性保持部材３６ｂは、例えば、熱硬化性樹脂や光硬化性樹脂等を含む導電性接着剤の硬化物である。 The base member 30 includes a first conductive holding member 36a and a second conductive holding member 36b that form a pair of conductive holding members. The first conductive holding member 36a and the second conductive holding member 36b hold the crystal vibrating element 10 at intervals from the base member 30 and the lid member 40. The first conductive holding member 36a and the second conductive holding member 36b electrically connect the crystal vibrating element 10 and the base member 30. Specifically, the first conductive holding member 36a electrically connects the first electrode pad 33a and the first connecting electrode 16a, and the second conductive holding member 36b electrically connects the second electrode pad 33b and the second connecting electrode. It is electrically connected to 16b. The first conductive holding member 36a and the second conductive holding member 36b are cured products of a conductive adhesive containing, for example, a thermosetting resin and a photocurable resin.
　次に、蓋部材４０について説明する。
　蓋部材４０は、ベース部材３０に接合されている。蓋部材４０は、ベース部材３０との間に水晶振動素子１０を収容する内部空間を形成する。蓋部材４０はベース部材３０の側に開口する凹部４９を有しており、本実施形態における内部空間は、凹部４９の内側の空間に相当する。凹部４９は、液密封止されている。蓋部材４０の材質は、導電材料であり、さらに望ましくは気密性の高い金属材料である。蓋部材４０が導電材料で構成されることによって、内部空間への電磁波の出入りを低減する電磁シールド機能が蓋部材４０に付与される。熱応力の発生を抑制する観点から、蓋部材４０の材質は、基体３１に近い熱膨張率を有する材料であることが望ましく、例えば常温付近での熱膨張率がガラスやセラミックと広い温度範囲で一致するＦｅ－Ｎｉ－Ｃｏ系合金である。 Next, the lid member 40 will be described.
The lid member 40 is joined to the base member 30. The lid member 40 forms an internal space for accommodating the crystal vibrating element 10 with the base member 30. The lid member 40 has a recess 49 that opens on the side of the base member 30, and the internal space in the present embodiment corresponds to the space inside the recess 49. The recess 49 is liquidtightly sealed. The material of the lid member 40 is a conductive material, more preferably a highly airtight metal material. Since the lid member 40 is made of a conductive material, the lid member 40 is provided with an electromagnetic shield function that reduces the ingress and egress of electromagnetic waves into the internal space. From the viewpoint of suppressing the generation of thermal stress, the material of the lid member 40 is preferably a material having a coefficient of thermal expansion close to that of the substrate 31, for example, the coefficient of thermal expansion near room temperature is in a wide temperature range of glass or ceramic. It is a matching Fe—Ni—Co based alloy.
　蓋部材４０は、平板状の天壁部４１と、天壁部４１の外縁に接続された側壁部４２とを有している。天壁部４１は、基体３１の上面３１Ａに沿って延在し、高さ方向において水晶振動素子１０を挟んでベース部材３０と対向している。また、側壁部４２は、天壁部４１からベース部材３０に向かって延在しており、基体３１の上面３１Ａと平行な方向において水晶振動素子１０を囲んでいる。蓋部材４０はさらに、側壁部４２のベース部材３０側の先端部に接続されており且つ基体３１の上面３１Ａに沿って外側に延在するフランジ部を有してもよい。 The lid member 40 has a flat top wall portion 41 and a side wall portion 42 connected to the outer edge of the top wall portion 41. The top wall portion 41 extends along the upper surface 31A of the substrate 31 and faces the base member 30 with the crystal vibrating element 10 interposed therebetween in the height direction. Further, the side wall portion 42 extends from the top wall portion 41 toward the base member 30, and surrounds the crystal vibrating element 10 in a direction parallel to the upper surface 31A of the base 31. The lid member 40 may further have a flange portion that is connected to the tip of the side wall portion 42 on the base member 30 side and extends outward along the upper surface 31A of the substrate 31.
　蓋部材４０は、凹部４９の側に位置する内面と、凹部４９とは反対側であって外部に露出する外面とを有している。内面は、天壁部４１及び側壁部４２の水晶振動素子１０に対向する側であり、外面は、天壁部４１及び側壁部４２の水晶振動素子１０に対向する側とは反対側である。蓋部材４０はさらに、ベース部材３０に対向する対向面４３Ｂを有している。対向面４３Ｂは、ベース部材３０の側壁部４２の先端において基体３１の上面３１Ａと平行に延在する面である。対向面４３Ｂの面積は、フランジ部を設けることによって拡張可能である。 The lid member 40 has an inner surface located on the side of the recess 49 and an outer surface on the opposite side of the recess 49 and exposed to the outside. The inner surface is the side of the top wall portion 41 and the side wall portion 42 facing the crystal oscillator 10, and the outer surface is the side of the top wall portion 41 and the side wall portion 42 opposite to the side facing the crystal oscillator 10. The lid member 40 further has a facing surface 43B facing the base member 30. The facing surface 43B is a surface extending parallel to the upper surface 31A of the base 31 at the tip of the side wall portion 42 of the base member 30. The area of the facing surface 43B can be expanded by providing a flange portion.
　主面の法線方向から平面視したときの蓋部材４０の平面形状は、例えば略矩形状である。蓋部材４０の平面形状は上記に限定されるものではなく、多角形状、円形状、楕円形状及びこれらの組合せでもよい。 The planar shape of the lid member 40 when viewed in a plane from the normal direction of the main surface is, for example, a substantially rectangular shape. The planar shape of the lid member 40 is not limited to the above, and may be a polygonal shape, a circular shape, an elliptical shape, or a combination thereof.
　次に、接合部材５０について説明する。
　接合部材５０は、ベース部材３０と蓋部材４０とを接合している。具体的には、接合部材５０は、保護膜３９と対向面４３Ｂとを接合し、上面電極３３ｃと対向面４３Ｂとを接合している。また、接合部材５０は、内部空間に相当する凹部４９を封止している。具体的には、接合部材５０は、ベース部材３０及び蓋部材４０のそれぞれの外縁部の全周に亘って設けられ、水晶振動素子１０を囲むように矩形の枠状をなしている。 Next, the joining member 50 will be described.
The joining member 50 joins the base member 30 and the lid member 40. Specifically, the joining member 50 joins the protective film 39 and the facing surface 43B, and joins the upper surface electrode 33c and the facing surface 43B. Further, the joining member 50 seals a recess 49 corresponding to an internal space. Specifically, the joining member 50 is provided over the entire circumference of each outer edge portion of the base member 30 and the lid member 40, and has a rectangular frame shape so as to surround the crystal vibrating element 10.
　接合部材５０は、導電性接着剤であり、接地用電極と蓋部材４０とを電気的に接続する。接合部材５０は、上面電極３３ｃと対向面４３Ｂとに接触している。接合部材５０は、例えば、熱硬化性樹脂を含む樹脂系接着剤に、導電性フィラーを添加して形成される。導電性接着剤に用いられる熱硬化性樹脂は、例えば、エポキシ系、ビニル系、アクリル系、ウレタン系、イミド系又はシリコーン系樹脂である。接合部材５０は、光硬化性樹脂を含んでもよい。等方的な導電性を有する接合部材５０に含まれる導電性フィラーは、例えば銀粒子などである。 The joining member 50 is a conductive adhesive that electrically connects the grounding electrode and the lid member 40. The joining member 50 is in contact with the upper surface electrode 33c and the facing surface 43B. The joining member 50 is formed by adding a conductive filler to, for example, a resin-based adhesive containing a thermosetting resin. The thermosetting resin used for the conductive adhesive is, for example, an epoxy-based, vinyl-based, acrylic-based, urethane-based, imide-based or silicone-based resin. The joining member 50 may contain a photocurable resin. The conductive filler contained in the joining member 50 having isotropic conductivity is, for example, silver particles.
　水晶振動素子１０と蓋部材４０との短絡を抑制する観点から、接合部材５０は、異方性導電性接着剤であることが望ましい。すなわち、接合部材５０は、Ｙ´軸方向に沿った導電性を有し、ＸＺ´面に沿った絶縁性を有してもよい。このように異方的な導電性を有する接合部材５０に含まれる導電性フィラーは、例えば樹脂製の球状コアを金属膜でコーティングした粒子であり、上面電極３３ｃと対向面４３Ｂとによって挟まれる。 From the viewpoint of suppressing a short circuit between the crystal vibrating element 10 and the lid member 40, it is desirable that the joining member 50 is an anisotropic conductive adhesive. That is, the joining member 50 may have conductivity along the Y'axis direction and insulation along the XZ'plane. The conductive filler contained in the joining member 50 having anisotropic conductivity as described above is, for example, particles obtained by coating a spherical core made of resin with a metal film, and is sandwiched between the upper surface electrode 33c and the facing surface 43B.
　次に、保護膜３９の厚み及び弾性率と、接合部材５０の厚み及び弾性率との関係について説明する。
　Ｙ´軸方向に沿った保護膜３９の厚みをＴｐとし、ベース部材３０と対向面４３Ｂとの間における接合部材５０のＹ´軸方向に沿った厚みをＴとする。保護膜３９と対向面４３Ｂとの間における接合部材５０のＹ´軸方向に沿った厚みとＴｂとし、上面電極３３ｃと対向面４３Ｂとの間における接合部材５０のＹ´軸方向に沿った厚みをＴｂ´とする。３０℃における保護膜３９の弾性率をＥｐとし、３０℃における接合部材５０の弾性率をＥｂとする。弾性率Ｅｐ，Ｅｂは、ＪＩＳ　Ｋ　７２４４－４“プラスチック－動的機械特性の試験方法－第４部：引張り振動－非共振法”に準じた測定方法によって測定される。弾性率Ｅｐ，Ｅｂは、例えば、エスアイアイ・ナノテクノロジー株式会社製の動的粘弾性測定装置ＤＭＳ６１００を用いて、以下の条件で測定される。
　引っ張りモード１Ｈｚ
　昇温：５℃／ｍｉｎ
　雰囲気：窒素ガス１５０ｍｌ／ｍｉｎ Next, the relationship between the thickness and elastic modulus of the protective film 39 and the thickness and elastic modulus of the joining member 50 will be described.
Let Tp be the thickness of the protective film 39 along the Y'axis direction, and let T be the thickness of the joining member 50 between the base member 30 and the facing surface 43B along the Y'axis direction. The thickness of the joining member 50 between the protective film 39 and the facing surface 43B along the Y'axis direction and Tb, and the thickness of the joining member 50 between the top electrode 33c and the facing surface 43B along the Y'axis direction. Let Tb'. The elastic modulus of the protective film 39 at 30 ° C. is defined as Ep, and the elastic modulus of the joining member 50 at 30 ° C. is defined as Eb. The elastic moduli Ep and Eb are measured by a measuring method according to JIS K 7244-4 "Plastic-Dynamic mechanical property test method-Part 4: Tension vibration-Non-resonant method". The elastic moduli Ep and Eb are measured under the following conditions using, for example, a dynamic viscoelasticity measuring device DMS6100 manufactured by SII Nanotechnology Co., Ltd.
Pull mode 1Hz
Temperature rise: 5 ° C / min
Atmosphere: Nitrogen gas 150 ml / min
　弾性率Ｅｂ及び厚みＴは、０．５ＧＰａ≦Ｅｂ≦４．０ＧＰａ、且つ、１０μｍ≦Ｔ≦５０μｍの関係を満たしている。したがって、厚みＴｂも１０μｍ≦Ｔｂ≦５０μｍの関係を満たし、厚みＴｂ´も１０μｍ≦Ｔｂ´≦５０μｍの関係を満たしている。弾性率Ｅｂが０．５ＧＰａよりも小さいと、充分な機械的強度が得られず、不良品が発生する場合がある。弾性率Ｅｂが４．０ＧＰａよりも大きいと、シェア強度が低下し、落下等の衝撃によって蓋部材４０がベース部材３０から剥落して不良品が発生する場合がある。厚みＴが１０μｍよりも小さいとシェア強度の低下によって不良品が発生する場合がある。厚みＴが５０μｍよりも大きいと封止性が損なわれる場合がある。なお、弾性率Ｅｐ及び厚みＴｐ，Ｔｂは、０．５ＧＰａ≦Ｅｐ≦４．０ＧＰａ、且つ、２０μｍ≦Ｔｐ＋Ｔｂ≦５０μｍの関係を満たすのが望ましい。以下、Ｔｐ＋Ｔｂを「合計膜厚」とする。 The elastic modulus Eb and the thickness T satisfy the relationship of 0.5 GPa ≦ Eb ≦ 4.0 GPa and 10 μm ≦ T ≦ 50 μm. Therefore, the thickness Tb also satisfies the relationship of 10 μm ≦ Tb ≦ 50 μm, and the thickness Tb ′ also satisfies the relationship of 10 μm ≦ Tb ≦ 50 μm. If the elastic modulus Eb is smaller than 0.5 GPa, sufficient mechanical strength may not be obtained and defective products may occur. If the elastic modulus Eb is larger than 4.0 GPa, the shear strength is lowered, and the lid member 40 may be peeled off from the base member 30 due to an impact such as dropping, resulting in a defective product. If the thickness T is smaller than 10 μm, defective products may occur due to a decrease in shear strength. If the thickness T is larger than 50 μm, the sealing property may be impaired. It is desirable that the elastic modulus Ep and the thicknesses Tp and Tb satisfy the relationship of 0.5 GPa ≦ Ep ≦ 4.0 GPa and 20 μm ≦ Tp + Tb ≦ 50 μm. Hereinafter, Tp + Tb will be referred to as "total film thickness".
　２０μｍ≦Ｔｐ＋Ｔｂ≦５０μｍの場合、厚みＴｂは１０μｍよりも小さくてもよい。この場合、弾性率Ｅｐ，Ｅｂ及び厚みＴｐ，Ｔｂは、０．５ＧＰａ≦（Ｅｐ×Ｔｐ＋Ｅｂ×Ｔｂ）／（Ｔｐ＋Ｔｂ）≦４．０ＧＰａ、且つ、２０μｍ≦Ｔｐ＋Ｔｂ≦５０μｍの関係を満たしている。以下、（Ｅｐ×Ｔｐ＋Ｅｂ×Ｔｂ）／（Ｔｐ＋Ｔｂ）を「合成弾性率」とする。合成弾性率が０．５ＧＰａよりも小さいと、充分な機械的強度が得られない。合成弾性率が４．０ＧＰａよりも大きいと、シェア強度の低下によって不良品が発生する場合がある。合計膜厚が２０μｍよりも小さいとシェア強度の低下によって不良品が発生する場合がある。合計膜厚が５０μｍよりも大きいと封止性が損なわれる場合がある。なお、弾性率Ｅｐ，Ｅｂ及び厚みＴｐ，Ｔｂは、１．５ＧＰａ≦（Ｅｐ×Ｔｐ＋Ｅｂ×Ｔｂ）／（Ｔｐ＋Ｔｂ）≦４．０ＧＰａの関係を満たしているのが望ましい。 When 20 μm ≦ Tp + Tb ≦ 50 μm, the thickness Tb may be smaller than 10 μm. In this case, the elastic moduli Ep, Eb and the thicknesses Tp, Tb satisfy the relationship of 0.5 GPa ≦ (Ep × Tp + Eb × Tb) / (Tp + Tb) ≦ 4.0 GPa and 20 μm ≦ Tp + Tb ≦ 50 μm. Hereinafter, (Ep × Tp + Eb × Tb) / (Tp + Tb) will be referred to as “synthetic elastic modulus”. If the synthetic elastic modulus is smaller than 0.5 GPa, sufficient mechanical strength cannot be obtained. If the synthetic elastic modulus is larger than 4.0 GPa, defective products may occur due to a decrease in share strength. If the total film thickness is smaller than 20 μm, defective products may occur due to a decrease in shear strength. If the total film thickness is larger than 50 μm, the sealing property may be impaired. It is desirable that the elastic moduli Ep, Eb and the thicknesses Tp, Tb satisfy the relationship of 1.5 GPa ≦ (Ep × Tp + Eb × Tb) / (Tp + Tb) ≦ 4.0 GPa.
　なお、厚みＴｐ，Ｔｂは、Ｔｂ＜Ｔｐの関係を満たしているのが望ましい。また、弾性率Ｅｐ，Ｅｂは、Ｅｐ≦Ｅｂの関係を満たすのが望ましい。 It is desirable that the thicknesses Tp and Tb satisfy the relationship of Tb <Tp. Further, it is desirable that the elastic moduli Ep and Eb satisfy the relationship of Ep ≦ Eb.
　次に、図５を参照しつつ、実施例及び比較例について説明する。図５は、実施例及び比較例のシェア強度をまとめた表である。 Next, Examples and Comparative Examples will be described with reference to FIG. FIG. 5 is a table summarizing the share strengths of Examples and Comparative Examples.
　（実施例１）
　弾性率Ｅｂは４．０ＧＰａ、厚みＴｂは１０μｍである。保護膜３９は省略されており、合成弾性率は４．０ＧＰａ、合計膜厚は１０μｍである。このとき、シェア強度は１６Ｎであった。 (Example 1)
The elastic modulus Eb is 4.0 GPa and the thickness Tb is 10 μm. The protective film 39 is omitted, the synthetic elastic modulus is 4.0 GPa, and the total film thickness is 10 μm. At this time, the share strength was 16N.
　（実施例２）
　弾性率Ｅｂは４．０ＧＰａ、厚みＴｂは５μｍである。弾性率Ｅｐは４．０ＧＰａであり、厚みＴｐは２０μｍである。合成弾性率は４．０ＧＰａ、合計膜厚は２５μｍである。このとき、シェア強度は１９Ｎであった。 (Example 2)
The elastic modulus Eb is 4.0 GPa and the thickness Tb is 5 μm. The elastic modulus Ep is 4.0 GPa and the thickness Tp is 20 μm. The synthetic elastic modulus is 4.0 GPa and the total film thickness is 25 μm. At this time, the share strength was 19N.
　（実施例３）
　弾性率Ｅｂは４．０ＧＰａ、厚みＴｂは５μｍである。弾性率Ｅｐは１．０ＧＰａであり、厚みＴｐは２０μｍである。合成弾性率は１．６ＧＰａ、合計膜厚は２５μｍである。このとき、シェア強度は２２Ｎであった。 (Example 3)
The elastic modulus Eb is 4.0 GPa and the thickness Tb is 5 μm. The elastic modulus Ep is 1.0 GPa and the thickness Tp is 20 μm. The synthetic elastic modulus is 1.6 GPa and the total film thickness is 25 μm. At this time, the share strength was 22N.
　（比較例１）
　弾性率Ｅｂは４．０ＧＰａ、厚みＴｂは５μｍである。保護膜３９は省略されており、合成弾性率は４．０ＧＰａ、合計膜厚は５μｍである。このとき、シェア強度は１０Ｎであった。 (Comparative Example 1)
The elastic modulus Eb is 4.0 GPa and the thickness Tb is 5 μm. The protective film 39 is omitted, the synthetic elastic modulus is 4.0 GPa, and the total film thickness is 5 μm. At this time, the share strength was 10N.
　（比較例２）
　弾性率Ｅｂは４．０ＧＰａ、厚みＴｂは５μｍである。弾性率Ｅｐは１０．０ＧＰａであり、厚みＴｐは２０μｍである。合成弾性率は８．８ＧＰａ、合計膜厚は２５μｍである。このとき、シェア強度は１２Ｎであった。 (Comparative Example 2)
The elastic modulus Eb is 4.0 GPa and the thickness Tb is 5 μm. The elastic modulus Ep is 10.0 GPa and the thickness Tp is 20 μm. The synthetic elastic modulus is 8.8 GPa and the total film thickness is 25 μm. At this time, the share strength was 12N.
　（従来例）
　接合部材として非導電性接着剤を用い、充分なシェア強度を有する水晶振動子のシェア強度を比較例として測定した。
　本例において、弾性率Ｅｂは４．０ＧＰａ、厚みＴｂは５μｍである。弾性率Ｅｐは４．０ＧＰａであり、厚みＴｐは１０μｍである。合成弾性率は４．０ＧＰａ、合計膜厚は１５μｍである。このとき、シェア強度は１８Ｎであった。 (Conventional example)
A non-conductive adhesive was used as the joining member, and the shear strength of a crystal unit having a sufficient shear strength was measured as a comparative example.
In this example, the elastic modulus Eb is 4.0 GPa and the thickness Tb is 5 μm. The elastic modulus Ep is 4.0 GPa and the thickness Tp is 10 μm. The synthetic elastic modulus is 4.0 GPa and the total film thickness is 15 μm. At this time, the share strength was 18N.
　比較例１～２のシェア強度は、比較例のシェア強度に比べて３０％以上低下している。一方、実施例１のシェア強度は、比較例のシェア強度の約９０％の大きさである。また、実施例２～３のシェア強度は、比較例のシェア強度よりも大きい。以上のように、実施例１～３では充分なシェア強度が得られることがわかった。 The share strength of Comparative Examples 1 and 2 is 30% or more lower than that of Comparative Example. On the other hand, the share strength of Example 1 is about 90% of the share strength of Comparative Example. Moreover, the share strength of Examples 2 to 3 is larger than the share strength of Comparative Example. As described above, it was found that sufficient share strength can be obtained in Examples 1 to 3.
　以上のように、本実施形態では、弾性率Ｅｂと厚みＴｂとが０．５ＧＰａ≦Ｅｂ≦４．０ＧＰａ且つ、１０μｍ≦Ｔ≦５０μｍの関係を満たす。若しくは、弾性率Ｅｂと、弾性率Ｅｐと、厚みＴｂと、厚みＴｂとが０．５ＧＰａ≦（Ｅｐ×Ｔｐ＋Ｅｂ×Ｔｂ）／（Ｔｐ＋Ｔｂ）≦４．０ＧＰａ且つ、２０μｍ≦Ｔｐ＋Ｔｂ≦５０μｍの関係を満たす。
　これによれば、接合部材５０を介して蓋部材４０を接地することによって電磁波の出入りによるノイズの発生を抑制しつつ、接合部材５０に起因したシェア強度の低下や封止性の低下による不良品の発生を抑制できる。 As described above, in the present embodiment, the elastic modulus Eb and the thickness Tb satisfy the relationship of 0.5 GPa ≦ Eb ≦ 4.0 GPa and 10 μm ≦ T ≦ 50 μm. Alternatively, the elastic modulus Eb, the elastic modulus Ep, the thickness Tb, and the thickness Tb satisfy the relationship of 0.5 GPa ≦ (Ep × Tp + Eb × Tb) / (Tp + Tb) ≦ 4.0 GPa and 20 μm ≦ Tp + Tb ≦ 50 μm. ..
According to this, while suppressing the generation of noise due to the inflow and outflow of electromagnetic waves by grounding the lid member 40 via the joining member 50, a defective product due to a decrease in shear strength and a decrease in sealing property due to the joining member 50. Can be suppressed.
　以下に、本発明の実施形態の一部又は全部を付記し、その効果について説明する。なお、本発明は以下の付記に限定されるものではない。 Hereinafter, a part or all of the embodiments of the present invention will be added, and the effects thereof will be described. The present invention is not limited to the following appendices.
　本発明の一態様によれば、水晶振動素子と、水晶振動素子が搭載されたベース部材と、ベース部材との間に導電性接着剤の接合部材を挟んで接合され、ベース部材との間に水晶振動素子が配置された内部空間を形成する導電性材料の蓋部材と、を備え、蓋部材は、天壁部と、天壁部の外縁からベース部材に向かって延びる側壁部とを有し、側壁部は、ベース部材に対向する対向面を有し、ベース部材には、水晶振動素子が接続される給電用電極と、接地に用いられる接地用電極とが設けられ、接地用電極は、接合部材を介して蓋部材に電気的に接続されており、３０℃における接合部材の弾性率Ｅｂと、ベース部材と対向面との間における接合部材の厚みＴとは、０．５ＧＰａ≦Ｅｂ≦４．０ＧＰａ且つ、１０μｍ≦Ｔ≦５０μｍの関係を満たす、水晶振動子が提供される。
　これによれば、接合部材を介して蓋部材を接地することによって電磁波の出入りによるノイズの発生を抑制しつつ、接合部材に起因したシェア強度の低下や封止性の低下による不良品の発生を抑制できる。 According to one aspect of the present invention, the crystal vibrating element, the base member on which the crystal vibrating element is mounted, and the base member are joined by sandwiching a bonding member of a conductive adhesive between the base member. A lid member of a conductive material forming an internal space in which a crystal oscillator is arranged is provided, and the lid member has a top wall portion and a side wall portion extending from an outer edge of the top wall portion toward a base member. The side wall portion has a facing surface facing the base member, and the base member is provided with a feeding electrode to which a crystal oscillator is connected and a grounding electrode used for grounding. It is electrically connected to the lid member via the joining member, and the elastic coefficient Eb of the joining member at 30 ° C. and the thickness T of the joining member between the base member and the facing surface are 0.5 GPa ≦ Eb ≦. Provided is a crystal oscillator that satisfies the relationship of 4.0 GPa and 10 μm ≦ T ≦ 50 μm.
According to this, while the generation of noise due to the inflow and outflow of electromagnetic waves is suppressed by grounding the lid member via the joining member, the generation of defective products due to the decrease in shear strength and the decrease in sealing property due to the joining member is prevented. Can be suppressed.
　一態様として、ベース部材には、少なくとも対向面と対向する給電用電極の領域を覆う絶縁性材料の保護膜が設けられ、保護膜は、接合部材と接触しており、３０℃における保護膜の弾性率Ｅｐと、給電用電極と対向面との間における保護膜の厚みＴｐと、給電用電極と対向面との間における接合部材の厚みＴｂとは、０．５ＧＰａ≦Ｅｐ≦４．０ＧＰａ且つ、２０μｍ≦Ｔｐ＋Ｔｂ≦５０μｍの関係を満たす。 As one aspect, the base member is provided with a protective film of an insulating material that covers at least the region of the feeding electrode facing the facing surface, and the protective film is in contact with the joining member and is a protective film at 30 ° C. The elastic modulus Ep, the thickness Tp of the protective film between the feeding electrode and the facing surface, and the thickness Tb of the joining member between the feeding electrode and the facing surface are 0.5 GPa ≦ Ep ≦ 4.0 GPa and , 20 μm ≦ Tp + Tb ≦ 50 μm.
　本発明の他の一態様によれば、水晶振動素子と、水晶振動素子が搭載されたベース部材と、ベース部材との間に導電性接着剤の接合部材を挟んで接合され、ベース部材との間に水晶振動素子が配置された内部空間を形成する導電性材料の蓋部材と、を備え、蓋部材は、天壁部と、天壁部の外縁からベース部材に向かって延びる側壁部とを有し、側壁部は、ベース部材に対向する対向面を有し、ベース部材には、水晶振動素子が接続される給電用電極と、接地に用いられる接地用電極と、少なくとも対向面と対向する給電用電極の領域を覆う絶縁性材料の保護膜とが設けられ、接地用電極及び保護膜は、接合部材と接触しており、３０℃における接合部材の弾性率Ｅｂと、３０℃における保護膜の弾性率Ｅｐと、給電用電極と対向面との間における接合部材の厚みＴｂと、給電用電極と対向面との間における保護膜の厚みＴｂと、は、０．５ＧＰａ≦（Ｅｐ×Ｔｐ＋Ｅｂ×Ｔｂ）／（Ｔｐ＋Ｔｂ）≦４．０ＧＰａ且つ、２０μｍ≦Ｔｐ＋Ｔｂ≦５０μｍの関係を満たす、水晶振動子が提供される。
　これによれば、接合部材を介して蓋部材を接地することによって電磁波の出入りによるノイズの発生を抑制しつつ、接合部材に起因したシェア強度の低下や封止性の低下による不良品の発生を抑制できる。 According to another aspect of the present invention, the crystal vibrating element, the base member on which the crystal vibrating element is mounted, and the base member are joined by sandwiching a joining member of a conductive adhesive, and the base member is joined. A lid member made of a conductive material that forms an internal space in which a crystal vibrating element is arranged is provided, and the lid member comprises a top wall portion and a side wall portion extending from the outer edge of the top wall portion toward the base member. The side wall portion has a facing surface facing the base member, and the base member has a feeding electrode to which a crystal oscillator is connected, a grounding electrode used for grounding, and at least facing the facing surface. A protective film of an insulating material covering the region of the power feeding electrode is provided, and the ground electrode and the protective film are in contact with the joining member, and the elastic coefficient Eb of the joining member at 30 ° C. and the protective film at 30 ° C. The elastic coefficient Ep of the above, the thickness Tb of the joining member between the feeding electrode and the facing surface, and the thickness Tb of the protective film between the feeding electrode and the facing surface are 0.5 GPa ≦ (Ep × Tp + Eb). A crystal oscillator that satisfies the relationship of × Tb) / (Tp + Tb) ≦ 4.0 GPa and 20 μm ≦ Tp + Tb ≦ 50 μm is provided.
According to this, while the generation of noise due to the inflow and outflow of electromagnetic waves is suppressed by grounding the lid member via the joining member, the generation of defective products due to the decrease in shear strength and the decrease in sealing property due to the joining member is prevented. Can be suppressed.
　一態様として、１．５ＧＰａ≦（Ｅｐ×Ｔｐ＋Ｅｂ×Ｔｂ）／（Ｔｐ＋Ｔｂ）≦４．０ＧＰａの関係が成り立つ。 As one aspect, the relationship of 1.5 GPa ≦ (Ep × Tp + Eb × Tb) / (Tp + Tb) ≦ 4.0 GPa is established.
　一態様として、保護膜はソルダーレジストである。 As one aspect, the protective film is a solder resist.
　一態様として、Ｔｂ＜Ｔｐの関係が成り立つ。 As one aspect, the relationship of Tb <Tp is established.
　一態様として、Ｅｐ≦Ｅｂの関係が成り立つ。 As one aspect, the relationship of Ep ≦ Eb is established.
　一態様として、接合部材は異方性導電性接着剤である。 In one aspect, the joining member is an anisotropic conductive adhesive.
　本発明に係る実施形態は、水晶振動子に限定されるものではなく、圧電振動子にも適用可能である。圧電振動子（Ｐｉｅｚｏｅｌｅｃｔｒｉｃ　Ｒｅｓｏｎａｔｏｒ　Ｕｎｉｔ）の一例が、水晶振動素子（Ｑｕａｒｔｚ　Ｃｒｙｓｔａｌ　Ｒｅｓｏｎａｔｏｒ）を備えた水晶振動子（Ｑｕａｒｔｚ　Ｃｒｙｓｔａｌ　Ｒｅｓｏｎａｔｏｒ　Ｕｎｉｔ）である。水晶振動素子は、圧電効果によって励振される圧電片として、水晶片（Ｑｕａｒｔｚ　Ｃｒｙｓｔａｌ　Ｅｌｅｍｅｎｔ）を利用するが、圧電片は、圧電単結晶、圧電セラミック、圧電薄膜、又は、圧電高分子膜などの任意の圧電材料によって形成されてもよい。一例として、圧電単結晶は、ニオブ酸リチウム（ＬｉＮｂＯ３）を挙げることができる。同様に、圧電セラミックは、チタン酸バリウム（ＢａＴｉＯ３）、チタン酸鉛（ＰｂＴｉＯ３）、チタン酸ジルコン酸鉛（Ｐｂ（ＺｒｘＴｉ１－ｘ）Ｏ３；ＰＺＴ）、窒化アルミニウム（ＡｌＮ）、ニオブ酸リチウム（ＬｉＮｂＯ３）、メタニオブ酸リチウム（ＬｉＮｂ２Ｏ６）、チタン酸ビスマス（Ｂｉ４Ｔｉ３Ｏ１２）、タンタル酸リチウム（ＬｉＴａＯ３）、四ホウ酸リチウム（Ｌｉ２Ｂ４Ｏ７）、ランガサイト（Ｌａ３Ｇａ５ＳｉＯ１４）、又は、五酸化タンタル（Ｔａ２Ｏ５）などを挙げることができる。圧電薄膜は、石英、又は、サファイアなどの基板上に上記の圧電セラミックをスパッタリング工法などによって成膜したものを挙げることができる。圧電高分子膜は、ポリ乳酸（ＰＬＡ）、ポリフッ化ビニリデン（ＰＶＤＦ）、又は、フッ化ビニリデン／三フッ化エチレン（ＶＤＦ／ＴｒＦＥ）共重合体などを挙げることができる。上記の各種圧電材料は、互いに積層して用いられてもよく、他の部材に積層されてもよい。 The embodiment according to the present invention is not limited to the crystal unit, and can be applied to the piezoelectric unit. An example of a piezoelectric vibrator (Piezoelectric Resonator Unit) is a crystal oscillator (Quartz Crystal Resnotor Unit) provided with a crystal vibrating element (Quartz Crystal Resonator). The crystal vibrating element uses a crystal piece (Quartz Crystal Element) as a piezoelectric piece excited by the piezoelectric effect, and the piezoelectric piece is an arbitrary such as a piezoelectric single crystal, a piezoelectric ceramic, a piezoelectric thin film, or a piezoelectric polymer film. It may be formed by the piezoelectric material of. As an example, the piezoelectric single crystal can include lithium niobate (LiNbO 3 ). Similarly, the piezoelectric ceramic is barium titanate (BaTiO 3), lead titanate (PbTiO 3), lead zirconate titanate (Pb (Zr x Ti 1- x) O 3; PZT), aluminum nitride (AlN), Lithium niobate (LiNbO 3 ), lithium metaniobate (LiNb 2 O 6 ), bismuth titanate (Bi 4 Ti 3 O 12 ), lithium tantalate (LiTaO 3 ), lithium tetraborate (Li 2 B 4 O 7 ) , Langasite (La 3 Ga 5 SiO 14 ), tantalate pentoxide (Ta 2 O 5 ), and the like. Examples of the piezoelectric thin film include those obtained by forming the above-mentioned piezoelectric ceramic on a substrate such as quartz or sapphire by a sputtering method or the like. Examples of the piezoelectric polymer film include polylactic acid (PLA), polyvinylidene fluoride (PVDF), and vinylidene fluoride / ethylene trifluoride (VDF / TrFE) copolymer. The above-mentioned various piezoelectric materials may be used by being laminated with each other, or may be laminated with another member.
　本発明に係る実施形態は、タイミングデバイス、発音器、発振器、荷重センサなど、圧電効果により電気機械エネルギー変換を行うデバイスであれば、特に限定されることなく適宜適用可能である。 The embodiment according to the present invention can be appropriately applied without particular limitation as long as it is a device that converts electromechanical energy by a piezoelectric effect, such as a timing device, a sounding device, an oscillator, and a load sensor.
　以上説明したように、本発明の一態様によれば、ノイズを抑制しつつ不良品の発生を抑制可能な圧電振動子を提供できる。 As described above, according to one aspect of the present invention, it is possible to provide a piezoelectric vibrator capable of suppressing the generation of defective products while suppressing noise.
　なお、以上説明した実施形態は、本発明の理解を容易にするためのものであり、本発明を限定して解釈するためのものではない。本発明は、その趣旨を逸脱することなく、変更／改良され得るとともに、本発明にはその等価物も含まれる。即ち、各実施形態に当業者が適宜設計変更を加えたものも、本発明の特徴を備えている限り、本発明の範囲に包含される。例えば、各実施形態が備える各要素及びその配置、材料、条件、形状、サイズなどは、例示したものに限定されるわけではなく適宜変更することができる。また、各実施形態が備える各要素は、技術的に可能な限りにおいて組み合わせることができ、これらを組み合わせたものも本発明の特徴を含む限り本発明の範囲に包含される。 It should be noted that the embodiments described above are for facilitating the understanding of the present invention, and are not for limiting and interpreting the present invention. The present invention can be modified / improved without departing from the spirit thereof, and the present invention also includes an equivalent thereof. That is, those skilled in the art with appropriate design changes to each embodiment are also included in the scope of the present invention as long as they have the features of the present invention. For example, each element included in each embodiment and its arrangement, material, condition, shape, size, and the like are not limited to those exemplified, and can be changed as appropriate. In addition, the elements included in each embodiment can be combined as much as technically possible, and the combination thereof is also included in the scope of the present invention as long as the features of the present invention are included.
　１…水晶振動子、
　１０…水晶振動素子、
　３０…ベース部材、
　３１…基体、
　３３ａ，３３ｂ…電極パッド、
　３３ｃ…上面電極、
　３４ａ～３４ｄ…側面電極、
　３５ａ～３５ｄ…外部電極、
　３９…保護膜、
　４０…蓋部材、
　４１…天壁部、
　４２…側壁部、
　４３Ｂ…対向面、
　５０…接合部材、 1 ... Crystal oscillator,
10 ... Crystal oscillator,
30 ... Base member,
31 ... Hypokeimenon,
33a, 33b ... Electrode pads,
33c ... Top electrode,
34a-34d ... Side electrodes,
35a-35d ... External electrodes,
39 ... Protective film,
40 ... Closure member,
41 ... Top wall,
42 ... Side wall,
43B ... Opposing surface,
50 ... Joining member,

Claims (8)

  1. 　圧電振動素子と、
    　前記圧電振動素子が搭載されたベース部材と、
    　前記ベース部材との間に導電性接着剤の接合部材を挟んで接合され、前記ベース部材との間に前記圧電振動素子が配置された内部空間を形成する導電性材料の蓋部材と、
    　を備え、
    　前記蓋部材は、天壁部と、前記天壁部の外縁から前記ベース部材に向かって延びる側壁部とを有し、前記側壁部は、前記ベース部材に対向する対向面を有し、
    　前記ベース部材には、前記圧電振動素子が接続される給電用電極と、接地に用いられる接地用電極とが設けられ、前記接地用電極は、前記接合部材を介して前記蓋部材に電気的に接続されており、
    　３０℃における前記接合部材の弾性率Ｅｂと、前記ベース部材と前記対向面との間における前記接合部材の厚みＴとは、
    　０．５ＧＰａ≦Ｅｂ≦４．０ＧＰａ
    　且つ、
    　１０μｍ≦Ｔ≦５０μｍ
    　の関係を満たす、圧電振動子。     Piezoelectric vibrating element and
    The base member on which the piezoelectric vibration element is mounted and
    A lid member made of a conductive material, which is joined with a conductive adhesive joining member sandwiched between the base member and forms an internal space in which the piezoelectric vibrating element is arranged between the base member and the base member.
    With
    The lid member has a top wall portion and a side wall portion extending from the outer edge of the top wall portion toward the base member, and the side wall portion has an facing surface facing the base member.
    The base member is provided with a power feeding electrode to which the piezoelectric vibration element is connected and a grounding electrode used for grounding, and the grounding electrode is electrically attached to the lid member via the joining member. Connected and
    The elastic modulus Eb of the joining member at 30 ° C. and the thickness T of the joining member between the base member and the facing surface are different from each other.
    0.5 GPa ≤ Eb ≤ 4.0 GPa
    and,
    10 μm ≤ T ≤ 50 μm
    Piezoelectric oscillator that satisfies the relationship.
  2. 　前記ベース部材には、少なくとも前記対向面と対向する前記給電用電極の領域を覆う絶縁性材料の保護膜が設けられ、前記保護膜は、前記接合部材と接触しており、
    　３０℃における前記保護膜の弾性率Ｅｐと、前記給電用電極と前記対向面との間における前記保護膜の厚みＴｐと、前記給電用電極と前記対向面との間における前記接合部材の厚みＴｂとは、
    　０．５ＧＰａ≦Ｅｐ≦４．０ＧＰａ
    　且つ、
    　２０μｍ≦Ｔｐ＋Ｔｂ≦５０μｍ
    　の関係を満たす、請求項１に記載の圧電振動子。     The base member is provided with a protective film of an insulating material that covers at least the region of the feeding electrode facing the facing surface, and the protective film is in contact with the joining member.
    The elastic modulus Ep of the protective film at 30 ° C., the thickness Tp of the protective film between the feeding electrode and the facing surface, and the thickness Tb of the joining member between the feeding electrode and the facing surface. Is
    0.5 GPa ≤ Ep ≤ 4.0 GPa
    and,
    20 μm ≤ Tp + Tb ≤ 50 μm
    The piezoelectric vibrator according to claim 1, which satisfies the above relationship.
  3. 　圧電振動素子と、
    　前記圧電振動素子が搭載されたベース部材と、
    　前記ベース部材との間に導電性接着剤の接合部材を挟んで接合され、前記ベース部材との間に前記圧電振動素子が配置された内部空間を形成する導電性材料の蓋部材と、
    　を備え、
    　前記蓋部材は、天壁部と、前記天壁部の外縁から前記ベース部材に向かって延びる側壁部とを有し、前記側壁部は、前記ベース部材に対向する対向面を有し、
    　前記ベース部材には、前記圧電振動素子が接続される給電用電極と、接地に用いられる接地用電極と、少なくとも前記対向面と対向する前記給電用電極の領域を覆う絶縁性材料の保護膜とが設けられ、前記接地用電極及び前記保護膜は、前記接合部材と接触しており、
    　３０℃における前記接合部材の弾性率Ｅｂと、３０℃における前記保護膜の弾性率Ｅｐと、前記給電用電極と前記対向面との間における前記接合部材の厚みＴｂと、前記給電用電極と前記対向面との間における前記保護膜の厚みＴｂとは、
    　０．５ＧＰａ≦（Ｅｐ×Ｔｐ＋Ｅｂ×Ｔｂ）／（Ｔｐ＋Ｔｂ）≦４．０ＧＰａ
    　且つ、
    　２０μｍ≦Ｔｐ＋Ｔｂ≦５０μｍ
    　の関係を満たす、圧電振動子。     Piezoelectric vibrating element and
    The base member on which the piezoelectric vibration element is mounted and
    A lid member made of a conductive material, which is joined with a conductive adhesive joining member sandwiched between the base member and forms an internal space in which the piezoelectric vibrating element is arranged between the base member and the base member.
    With
    The lid member has a top wall portion and a side wall portion extending from the outer edge of the top wall portion toward the base member, and the side wall portion has an facing surface facing the base member.
    The base member includes a feeding electrode to which the piezoelectric vibration element is connected, a grounding electrode used for grounding, and a protective film of an insulating material that covers at least a region of the feeding electrode facing the facing surface. Is provided, and the grounding electrode and the protective film are in contact with the joining member.
    The elastic modulus Eb of the joining member at 30 ° C., the elastic modulus Ep of the protective film at 30 ° C., the thickness Tb of the joining member between the feeding electrode and the facing surface, the feeding electrode and the above. The thickness Tb of the protective film between the facing surfaces is
    0.5 GPa ≤ (Ep x Tp + Eb x Tb) / (Tp + Tb) ≤ 4.0 GPa
    and,
    20 μm ≤ Tp + Tb ≤ 50 μm
    Piezoelectric oscillator that satisfies the relationship.
  4. 　１．５ＧＰａ≦（Ｅｐ×Ｔｐ＋Ｅｂ×Ｔｂ）／（Ｔｐ＋Ｔｂ）≦４．０ＧＰａ
    　の関係が成り立つ、
    　請求項３に記載の圧電振動子。     1.5 GPa ≤ (Ep x Tp + Eb x Tb) / (Tp + Tb) ≤ 4.0 GPa
    Relationship holds,
    The piezoelectric vibrator according to claim 3.
  5. 　前記保護膜はソルダーレジストである、
    　請求項２から４のいずれか１項に記載の圧電振動子。     The protective film is a solder resist,
    The piezoelectric vibrator according to any one of claims 2 to 4.
  6. 　Ｔｂ＜Ｔｐ
    　の関係が成り立つ、
    　請求項２から５のいずれか１項に記載の圧電振動子。     Tb <Tp
    Relationship holds,
    The piezoelectric vibrator according to any one of claims 2 to 5.
  7. 　Ｅｐ≦Ｅｂ
    　の関係が成り立つ、
    　請求項２から６のいずれか１項に記載の圧電振動子。     Ep ≤ Eb
    Relationship holds,
    The piezoelectric vibrator according to any one of claims 2 to 6.
  8. 　前記接合部材は異方性導電性接着剤である、
    　請求項１から７のいずれか１項に記載の圧電振動子。     The joining member is an anisotropic conductive adhesive.
    The piezoelectric vibrator according to any one of claims 1 to 7.
PCT/JP2020/044480 2020-04-30 2020-11-30 Piezoelectric vibrator WO2021220542A1 (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002271163A (en) * 2001-03-09 2002-09-20 Nippon Dempa Kogyo Co Ltd Surface-mounted quartz oscillator
JP2005183292A (en) * 2003-12-22 2005-07-07 Hitachi Cable Ltd Plastic film with adhesive for highly flexible ffc
JP2009105804A (en) * 2007-10-25 2009-05-14 Epson Toyocom Corp Quartz crystal vibrator and method of manufacturing the same
JP2015220749A (en) * 2014-05-13 2015-12-07 日本電波工業株式会社 Crystal oscillator and manufacturing method for the same
JP2017135573A (en) * 2016-01-28 2017-08-03 京セラ株式会社 Method for manufacturing piezoelectric device
JP2018170793A (en) * 2018-07-06 2018-11-01 セイコーエプソン株式会社 Vibration device and electronic equipment
JP2020043434A (en) * 2018-09-07 2020-03-19 京セラ株式会社 Crystal device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002271163A (en) * 2001-03-09 2002-09-20 Nippon Dempa Kogyo Co Ltd Surface-mounted quartz oscillator
JP2005183292A (en) * 2003-12-22 2005-07-07 Hitachi Cable Ltd Plastic film with adhesive for highly flexible ffc
JP2009105804A (en) * 2007-10-25 2009-05-14 Epson Toyocom Corp Quartz crystal vibrator and method of manufacturing the same
JP2015220749A (en) * 2014-05-13 2015-12-07 日本電波工業株式会社 Crystal oscillator and manufacturing method for the same
JP2017135573A (en) * 2016-01-28 2017-08-03 京セラ株式会社 Method for manufacturing piezoelectric device
JP2018170793A (en) * 2018-07-06 2018-11-01 セイコーエプソン株式会社 Vibration device and electronic equipment
JP2020043434A (en) * 2018-09-07 2020-03-19 京セラ株式会社 Crystal device

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