JP2020043434A - Crystal device - Google Patents

Abstract

To provide a crystal device that can improve the mounting strength of a thermo-sensitive element.SOLUTION: A crystal device 10 comprises: a rectangular substrate 110a; a mounting frame body 160 provided along an outer peripheral edge of an under surface of the substrate 110a; electrode pads provided on a top face of the substrate 110a; connection pads 117a, 117b provided on the under surface of the substrate 110a; joint terminals 112a to 112d provided on the under surface of the substrate 110a and electrically connected to the electrode pads and connection pads 117a, 117b; connection patterns 118a, 118b provided on the under surface of the substrate 110a and electrically connecting the joint terminals 112c, 112d with the connection pads 117a, 117b; a crystal element mounted on the electrode pads; a thermo-sensitive element mounted on the connection pads 117a, 117b; and groove parts M1 to M6 provided in the connection patterns 118a, 118b.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a crystal device used for electronic equipment and the like.

  A crystal device generates a specific frequency by using a piezoelectric effect of a crystal element. For example, a substrate, a frame provided on the upper surface of the substrate for providing the first concave portion, a mounting frame provided on the lower surface of the substrate for providing the second concave portion, and an electrode provided on the upper surface of the substrate A crystal element mounted on the pad and a temperature-sensitive element mounted on a connection pad provided on the lower surface of the substrate are provided. The substrate and the first frame constitute a package.

JP 2015-90989 A

  In the above-described crystal device, when the temperature-sensitive element is mounted on the connection pad via the conductive bonding material, the conductive bonding material flows out onto the connection pattern, so that the conductive bonding material on the connection pad is insufficient. In addition, there is a possibility that the mounting strength of the temperature-sensitive element is reduced.

  The present disclosure has been made in view of the above problems, and has as its object to provide a crystal device that can improve the mounting strength of a temperature-sensitive element.

  A crystal device according to one aspect of the present disclosure includes a rectangular substrate, a mounting frame provided along an outer peripheral edge of a lower surface of the substrate, an electrode pad provided on an upper surface of the substrate, and a Connection pads provided on the lower surface of the substrate and electrically connected to the electrode pads and the connection pads, and connection patterns provided on the lower surface of the substrate and electrically connecting the connection terminals and the connection pads. A crystal element mounted on the electrode pad, a temperature-sensitive element mounted on the connection pad, and a groove provided on the connection pattern.

  In the crystal device according to one aspect of the present disclosure, when mounting the temperature-sensitive element on the connection pad via the conductive bonding material, since the conductive bonding material is prevented from flowing out onto the connection pattern by the groove, The mounting strength of the temperature sensing element can be improved.

FIG. 2 is an exploded perspective view illustrating the crystal device according to the first embodiment. FIG. 2 is a sectional view taken along line II-II in FIG. 1. FIG. 3 is a sectional view taken along line III-III in FIG. 1. FIG. 4A is a plan view of the entire package forming the crystal device of the first embodiment as viewed from above, and FIG. 4B is a plan view of the substrate of the package forming the crystal device of the first embodiment viewed from above. It is. FIG. 5A is a perspective plan view of the lower surface side of the substrate of the package constituting the crystal device of the first embodiment viewed from above, and FIG. 5B is a lower surface side of the crystal device of Embodiment 1 viewed from above. FIG. 5C is a perspective plan view and FIG. 5C is a cross-sectional view taken along line CC in FIG. 5A. FIG. 6A is a plan view of the mounting frame constituting the crystal device of Embodiment 1 as viewed from above, and FIG. 6B is a bottom view of the mounting frame of the crystal device of Embodiment 1 viewed from above. FIG. FIG. 7A is a plan view of a mounting frame constituting the crystal device of Modification 1 as viewed from above, and FIG. 7B is a bottom view of the mounting frame of the crystal device of Modification 1 as viewed from above. FIG. FIG. 8A is a plan view of a mounting frame constituting the crystal device of Modification 2 as viewed from above, and FIG. 8B is a bottom view of the mounting frame of the crystal device of Modification 2 as viewed from above. FIG. 8C is a cross-sectional view taken along the line CC in FIG. 8A. FIG. 13 is an exploded perspective view illustrating a quartz crystal device according to a third modification. It is XX sectional drawing in FIG. FIG. 11A is a perspective plan view of the lower surface side of the substrate of the package constituting the crystal device of Modification 3 as viewed from above, and FIG. 11B is a lower surface side of the crystal device of Modification 3 as viewed from above. It is a plane perspective view.

  Hereinafter, embodiments for implementing the present invention (hereinafter, referred to as “embodiments”) and modifications thereof will be described with reference to the accompanying drawings. In the specification and the drawings, substantially the same components are denoted by the same reference numerals, and description thereof is omitted as appropriate. The shapes described in the drawings are drawn so as to be easily understood by those skilled in the art, and do not always correspond to actual dimensions and ratios. In each plan perspective view, a part of the configuration that cannot be directly viewed is drawn by a solid line.

<First embodiment>
As shown in FIGS. 1 to 6, the crystal device 10 according to the first embodiment includes a package 110, a crystal element 120 bonded to an upper surface of the package 110, and a temperature-sensitive element 150 bonded to a lower surface of the package 110. including. The package 110 has a housing portion K1 surrounded by the upper surface of the substrate 110a and the inner surface of the frame 110b, and a concave portion K2 surrounded by the lower surface of the substrate 110a and the inner surface of the mounting frame 160, respectively. Have been. The crystal device 10 is used, for example, to output a reference signal used in an electronic device or the like.

  The substrate 110a has a rectangular shape, and the crystal element 120 is mounted on the upper surface, and the temperature sensing element 150 is mounted on the lower surface. Therefore, as shown in FIG. 4A, a pair of electrode pads 111a and 111b for mounting the crystal element 120 are provided on the upper surface of the substrate 110a, and as shown in FIG. A pair of connection pads 117a and 117b for mounting are provided on the lower surface of the substrate 110a.

  As shown in FIG. 5A, bonding terminals 112a to 112d are provided at four corners on the lower surface of the substrate 110a. Two of the joining terminals 112a and 112b are electrically connected to the crystal element 120, and the other two joining terminals 112c and 112d are electrically connected to the temperature-sensitive element 150. The joining terminals 112a and 112b electrically connected to the crystal element 120 are located at one diagonal of the lower surface of the substrate 110a, and the joining terminals 112c and 112d electrically connected to the temperature-sensitive element 150 are located on the lower surface of the substrate 110a. Is located on the other diagonal of.

  The substrate 110a is a single or a plurality of insulating layers made of a ceramic material such as alumina ceramics or glass ceramics. As shown in FIG. 4B, wiring patterns 113a and 113b are provided on the upper surface of the substrate 110a, and via conductors 114a to 114c are provided inside the substrate 110a. As shown in FIGS. 4B and 5A, the wiring patterns 113a and 113b and the via conductors 114a and 114b are provided on the electrode pads 111a and 111b provided on the upper surface of the substrate 110a and on the lower surface of the substrate 110a. The connection terminals 112a and 112b are electrically connected. As shown in FIG. 5A, connection patterns 118a and 118b for electrically connecting the connection pads 117a and 117b and the connection terminals 112c and 112d are provided on the lower surface of the substrate 110a.

  The frame 110b is arranged along the outer peripheral edge of the upper surface of the substrate 110a, and forms a housing portion K1 on the upper surface of the substrate 110a. The frame 110b is made of a ceramic material such as alumina ceramics or glass ceramics, and is formed integrally with the substrate 110a.

  The electrode pads 111a and 111b are for mounting the crystal element 120 on the upper surface of the substrate 110a, and are provided as a pair adjacent to one side of the substrate 110a. The electrode pad 111a is electrically connected to the bonding terminal 112a via the wiring pattern 113a and the via conductor 114a, and the electrode pad 111b is electrically connected to the bonding terminal 112b via the wiring pattern 113b and the via conductor 114b.

  The bonding terminals 112a to 112d are provided at four corners on the lower surface of the substrate 110a, and are electrically connected to the bonding pads 161a to 161d of the mounting frame 160. The joining terminals 112a and 112b are electrically connected to a pair of electrode pads 111a and 111b provided on the upper surface of the substrate 110a, respectively. The joint terminal 112c is electrically connected to the sealing conductor pattern 119 via the via conductor 114c. A conductive bonding material 170 (FIGS. 2 and 3) is provided between the bonding terminals 112a to 112d and the bonding pads 161a to 161d of the mounting frame 160.

  As shown in FIG. 4B, the wiring patterns 113a and 113b are provided on the upper surface of the substrate 110a and are drawn out from the electrode pads 111a and 111b toward the nearby via conductors 114a and 114b.

  The via conductors 114a to 114c are provided inside the substrate 110a. The upper ends of the via conductors 114a and 114b are electrically connected to the wiring patterns 113a and 113b, and the lower ends are respectively connected to the joining terminals 112a and 112b. The via conductor 114c has an upper end electrically connected to the sealing conductor pattern 119 and a lower end electrically connected to the joint terminal 112c. The via conductors 114a to 114c are formed by filling the inside of the through holes provided in the substrate 110a with a conductor.

  The protrusions 115a and 115b are provided on the electrode pads 111a and 111b, respectively, so as to be aligned on a straight line parallel to one side of the substrate 110a. By mounting the extraction electrodes 123a and 123b of the crystal element 120 on the electrode pads 111a and 111b while making contact with the protrusions 115a and 115b, the tip of the crystal element 120 can be prevented from contacting the upper surface of the substrate 110a, so that the crystal element 120 is stable. The obtained hysteresis characteristics are obtained.

  The connection pads 117a and 117b have a rectangular shape and are used for mounting a temperature-sensitive element 150 described later. The conductive bonding material 180 (FIGS. 2 and 3) is also provided between the lower surfaces of the connection pads 117a and 117b and the connection terminals 151a and 151b of the temperature-sensitive element 150. Here, when the substrate 110a is viewed in plan, for example, the dimension of the long side of the substrate 110a is 1.2 to 2.5 mm, and the dimension of the short side of the substrate 110a is 1.0 to 2.0 mm. An example of the size of the connection pads 117a and 117b in this case will be described. The connection pads 117a and 117b each have a length parallel to the short side of the substrate 110a of 0.8 to 2.0 mm and a length parallel to the long side of the substrate 110a of 0.25 to 0.55 mm. It is. The length between the connection pads 117a and 117b is 0.1 to 0.3 mm.

  The connection patterns 118a and 118b are provided on the lower surface of the substrate 110a, and are drawn out from the connection pads 117a and 117b toward the bonding terminals 112d and 112c. The connection pattern 118a has one end electrically connected to the connection pad 117a and the other end electrically connected to the bonding terminal 112d. The connection pattern 118b has one end electrically connected to the connection pad 117b and the other end electrically connected to the bonding terminal 112c.

  As shown in FIGS. 4B and 5A, the connection pattern 118a is located between the pair of electrode pads 111a and 111b in plan view. Thus, the heat of the crystal element 120 is transmitted from the connection pattern 118a to the connection pad 117a via the substrate 110a immediately below the electrode pads 111a and 111b. Therefore, the heat conduction path between the crystal element 120 and the temperature sensing element 150 can be shortened, so that the temperature of the crystal element 120 and the temperature of the temperature sensing element 150 are approximated, and the temperature output from the temperature sensing element 150 is obtained. The difference between the temperature obtained by converting the applied voltage and the actual temperature around crystal element 120 can be reduced.

  The sealing conductor pattern 119 is formed on the upper surface of the frame 110b in an annular shape with a thickness of, for example, 10 to 25 μm. When the sealing conductor pattern 119 is joined to the lid 130 via the joining member 131, the joining member 131 has good wettability. Play a role. As shown in FIG. 4A → FIG. 4B → FIG. 5A, the sealing conductor pattern 119 is electrically connected to the joint terminal 112c via the via conductor 114c. Such a sealing conductor pattern 119 is obtained by sequentially applying nickel plating and gold plating to the surface of a connection pattern made of, for example, tungsten or molybdenum.

  As shown in FIG. 5A, the grooves M1, M3, and M5 are provided in the connection pattern 118a, and the grooves M2, M4, and M6 are provided in the connection pattern 118b. The connection pattern 118a extends not only between the connection pad 117a and the bonding terminal 112d but also from the bonding terminal 112d to the bonding terminal 112b side. The connection pattern 118b extends not only between the connection pad 117b and the bonding terminal 112c but also from the bonding terminal 112c to the bonding terminal 112a.

  The grooves M1 and M2 suppress the flow of the conductive bonding material 180 (FIGS. 2 and 3) mainly from the connection pads 117a and 117b toward the bonding terminals 112c and 112d. The grooves M3 and M4 suppress the flow of the conductive bonding material 170 (FIGS. 2 and 3) mainly from the bonding terminals 112c and 11d toward the connection pads 117a and 117b. The grooves M5 and M6 suppress the flow of the conductive bonding material 170 (FIGS. 2 and 3) mainly from the bonding terminals 112c and 11d toward the connection patterns 118a and 118b. The outflow of the conductive bonding materials 170 and 180 causes a reduction in bonding strength and an electrical short circuit.

  As shown in FIG. 5C, the groove M1 may be provided with protrusions m1 and m2 at its edge. At least the surface of the protrusions m1 and m2 is made of a metal oxide. The metal oxide has a property that it is hard to wet the conductive bonding material 170. When the connection pattern 118a made of a metal film is irradiated with a laser beam to cut the intermediate layer, for example, nickel (Ni) and the upper layer, for example, gold (Au), the groove M1 is formed, and the protrusions m1, m2 are also formed at the same time. Is done. At this time, nickel (Ni) is scraped by the laser beam and generates heat, thereby reacting with air to form a metal oxide. Thus, the groove M1 and the protrusions m1 and m2 can effectively suppress the spread of the conductive bonding material 170 by the physical action of the dam and the chemical action of the metal oxide. Note that the convex portions m1 and m2 may be provided in other groove portions M2 to M6. The convex portions m1 and m2 may be only one of them.

  The grooves M1 and M2 are provided on the connection patterns 118a and 118b near the connection pads 117a and 117b, respectively, in a direction parallel to the short side direction of the substrate 110a. That is, the grooves M1 and M2 are provided on the connection patterns 118a and 118b in the vicinity of the connection pads 117a and 117b, respectively, so as to cross along the width direction of the connection patterns 118a and 118b. Accordingly, it is possible to suppress the conductive bonding material 180 from flowing out from the connection pads 117a and 117b toward the bonding terminals 112c and 112d.

  The grooves M3 and M4 are provided on the connection patterns 118a and 118b near the joint terminals 112c and 112d, respectively, in a direction parallel to the long side direction of the substrate 110a. That is, the grooves M3 and M4 are provided on the connection patterns 118a and 118b, respectively, near the joint terminals 112c and 112d and crossing the connection patterns 118a and 118b in the width direction. Accordingly, it is possible to suppress the conductive bonding material 170 from flowing out from the bonding terminals 112c and 112d toward the connection pads 117a and 117b.

  The grooves M5 and M6 are provided on the connection patterns 118a and 118b near the joint terminals 112c and 112d, respectively, in a direction parallel to the short side direction of the substrate 110a. That is, the groove portions M5 and M6 are provided on the connection patterns 118a and 118b so as to cross along the width direction of the connection patterns 118a and 118b. Accordingly, it is possible to suppress the conductive bonding material 170 from flowing out from the bonding terminals 112c and 112d toward the connection patterns 118a and 118b.

  The mounting frame 160 is joined along the outer peripheral edge of the lower surface of the substrate 110a to form a concave portion K2 on the lower surface of the substrate 110a. The mounting frame 160 is made of, for example, an insulating substrate such as a glass epoxy resin, and is bonded to the lower surface of the substrate 110a via a conductive bonding material 170 (FIGS. 2 and 3). 6A, bonding pads 161a to 161d are provided on the upper surface of the mounting frame 160, and external terminals 162a to 162d are provided on the lower surface of the mounting frame 160 as shown in FIG. 6B. Have been. The bonding pads 161a to 161d and the external terminals 162a to 162d are electrically connected by bonding patterns 163a to 163d.

  The bonding pads 161a to 161d are electrically connected to the bonding terminals 112a to 112d on the lower surface of the substrate 110a via the conductive bonding material 170 (FIGS. 2 and 3).

  The external terminals 162a to 162d are provided on the lower surface of the mounting frame 160 and are used for mounting on a mounting substrate such as an electronic device. The external terminals 162a and 162b are located at one diagonal of the lower surface of the mounting frame 160, are electrically connected to the crystal element 120, and are used as input / output terminals of the crystal element 120. The external terminals 162c and 162d are located on the other diagonal of the lower surface of the mounting frame 160, and are electrically connected to the temperature sensing element 150. The external terminal 162c is connected to a ground potential that is a reference potential on a mounting board of an electronic device or the like. Therefore, the lid 130 joined to the sealing conductor pattern 119 is electrically connected to the external terminal 162c at the ground potential. Thereby, the shielding property in the housing part K1 by the lid 130 is improved.

  The bonding patterns 163a to 163d electrically connect the bonding pads 161a to 161d and the external terminals 162a to 162d. The bonding pad 161a is connected to the external terminal 162a via the bonding pattern 163a, the bonding pad 161b is connected to the external terminal 162b via the bonding pattern 163b, the bonding pad 161c is connected to the external terminal 162c via the bonding pattern 163c, and the bonding pad 161d is bonded. Each is electrically connected to the external terminal 162d via the pattern 163d.

  Further, the joining patterns 163a to 163d are divided into upper surface portions 164a to 164d, side surface portions 165a to 165d, and lower surface portions 166a to 166d, respectively. The upper surface portions 164a to 164d are provided on the upper surface of the mounting frame 160, the side surface portions 165a to 165d are provided on the side surface of the mounting frame 160, and the lower surface portions 166a to 166d are provided on the lower surface of the mounting frame 160, respectively. The lower surfaces 166a to 166d may be integrated with the external terminals 162a to 162d. In this case, the bonding patterns 163a to 163d include upper surfaces 164a to 164d and side surfaces 165a to 165d.

  The bonding patterns 163a to 163d are formed to have a uniform width from the external terminals 162a to 162d to the bonding pads 161a to 161d via the side and top surfaces of the mounting frame 160. As shown in FIG. 6A, the width W of the bonding patterns 163a to 163d is orthogonal to the direction in which the bonding patterns 163a to 163d extend toward the bonding pads 161a to 161d when the mounting frame 160 is viewed in a plan view. It is a dimension along the direction in which Accordingly, heat from the outside is evenly transmitted from the external terminals 162a to 162d to the bonding pads 161a to 161d through the bonding patterns 163a to 163d, so that heat conduction from the outside to the temperature-sensitive element 150 can be improved. . Therefore, the difference between the temperature of the external environment and the temperature information sensed by the temperature sensing element 150 can be reduced, and good temperature characteristics can be obtained. If the widths of the bonding patterns 163a to 163d are not uniform from the external terminals 162a to 162d to the bonding pads 161a to 161d, the following problem occurs. (1) Since the thermal resistance is increased in the narrow portion, the heat conduction is hindered. (2) The thinned portion becomes a heat source when energized because the electrical resistance increases.

  The protrusion 169 is provided on the external terminal 162a so as to extend in the long side direction of the mounting frame 160. Since the protrusion 169 functions as a mark of the external terminal 162a, it is used to determine the external terminals 162a to 162d when mounting on a motherboard such as an electronic device.

  The bonding terminals 112a to 112d of the substrate 110a and the bonding pads 161a to 161d of the mounting frame 160 are bonded via the conductive bonding material 170, as shown in FIG. 160, a gap G is formed. The gap G corresponds to the sum of the thicknesses of the conductive bonding material 170, the bonding terminals 112a to 112d (any one), and the bonding pads 161a to 161d (any one). An insulating resin 190 (FIG. 3) that covers the temperature sensing element 150 is provided in the gap G. For example, it is assumed that the crystal device 10 is mounted on a mounting substrate such as an electronic device, and electronic components such as a power amplifier mounted on the mounting substrate generate heat, and the heat is transmitted to the concave portion K2 via the mounting substrate. In such a case, since the insulating resin 190 provided in the gap G is exposed to the outside, the heat is released from the insulating resin 190 to the outside. Thereby, the influence of heat from the mounting board or the like on the temperature sensing element 150 mounted in the concave portion K2 can be reduced. Therefore, the temperature obtained from the temperature sensing element 150 can be made closer to the actual temperature around the crystal element 120. In addition, since the insulating resin 190 is provided in the gap G, the temperature-sensitive element 150 is securely fixed by the insulating resin 190, so that peeling of the temperature-sensitive element 150 from the substrate 110a can be suppressed.

  Here, a method for manufacturing the mounting frame 160 will be described. When the mounting frame 160 is a glass epoxy resin, a substrate made of glass fiber is impregnated with an epoxy resin precursor, and the epoxy resin precursor is thermally cured at a predetermined temperature. In addition, predetermined portions of the conductor pattern, specifically, the bonding pads 161a to 161d, the external terminals 162a to 162d, and the bonding patterns 163a to 163d are, for example, copper foil processed into a predetermined shape on a resin sheet made of glass epoxy resin. Is transferred, and the resin sheet to which the copper foil has been transferred is laminated with an adhesive. The via conductors 114a to 114d are formed by forming a through hole in a resin sheet and applying a metal to the inner surface of the through hole by a conductive paste printing or plating method, or filling the through hole with a metal.

  As shown in FIGS. 1 and 2, the crystal element 120 is bonded on the electrode pads 111a and 111b via the conductive adhesive 140, and oscillates a reference signal of an electronic device or the like by stable mechanical vibration and piezoelectric effect. Play a role. As shown in FIGS. 1 and 2, the crystal element 120 has a crystal plate 121, excitation electrodes 122a and 122b, and extraction electrodes 123a and 123b. The excitation electrodes 122a and 122b and the extraction electrodes 123a and 123b are obtained by applying metal to the quartz plate 121 in a predetermined pattern. An excitation electrode 122a is formed on the upper surface of the quartz crystal plate 121, and an excitation electrode 122b is formed on the lower surface of the quartz crystal plate 121.

  The extraction electrode 123a is extracted from the excitation electrode 122a, and the extraction electrode 123b is extracted from the excitation electrode 122b and provided to extend toward one side of the quartz crystal plate 121, respectively. That is, the extraction electrodes 123a and 123b are provided in a shape along the long side or the short side of the quartz crystal plate 121. In addition, the extraction electrodes 123a and 123b are connected to the electrode pads 111a and 111b, and one end of the crystal element 120 is used as a fixed end, and the other end of the crystal element 120 is used as a free end separated from the upper surface of the substrate 110a. The crystal element 120 is fixed on the substrate 110a by the support structure.

  The operation of the crystal element 120 will be described. When an alternating voltage from the outside is applied to the crystal plate 121 via the extraction electrodes 123a and 123b and the excitation electrodes 122a and 122b, the crystal element 120 is excited in a predetermined vibration mode and frequency. It has become.

  A method for manufacturing the crystal element 120 will be described. First, the quartz plate 121 is cut out from artificial quartz at a predetermined cut angle, and the outer periphery of the quartz plate 121 is thinned. At this time, a bevel process is performed so that the central portion of the quartz plate 121 is thicker than the outer peripheral portion of the quartz plate 121. Then, a metal film is applied to both main surfaces of the quartz crystal plate 121 by vapor deposition or sputtering, and excitation electrodes 122a and 122b and extraction electrodes 123a and 122b having predetermined shapes are formed by photolithography.

  A method for bonding the substrate 110a of the crystal element 120 will be described. First, a conductive adhesive 140 is applied to the electrode pads 111a and 111b by, for example, a dispenser, and the crystal element 120 is mounted on the conductive adhesive 140. When the conductive adhesive 140 is heated, the conductive adhesive 140 cures and contracts, so that the crystal element 120 is bonded to the electrode pads 111a and 111b. That is, the extraction electrode 123a is joined to the electrode pad 111a, and the extraction electrode 123b is joined to the electrode pad 111b. As a result, the crystal element 120 is electrically connected to the external terminals 162a and 162b of the mounting frame 160.

  The conductive adhesive 140 contains, for example, a conductive powder as a conductive filler in a binder such as a silicone resin. As the conductive powder, a powder containing any of aluminum, molybdenum, tungsten, platinum, palladium, silver, titanium, nickel or nickel iron, or a combination thereof is used. As the binder, for example, a silicone resin, an epoxy resin, a polyimide resin, or a bismaleimide resin is used.

  The temperature sensing element 150 is mounted on the connection pads 117a and 117b provided in the recess K2. As the temperature sensing element 150, a thermistor, a platinum resistance temperature detector, a diode, or the like is used as described later.

  When a thermistor is used as the temperature sensing element 150, as shown in FIG. 1 and FIG. 2, the whole becomes a rectangular parallelepiped, and connection terminals 151a and 151b are provided at both ends thereof. The connection terminal 151a is provided on the left side surface of the temperature sensing element 150 and a surface continuous with the left side surface thereof, and the connection terminal 151b is provided on the right side surface of the temperature sensing element 150 and a surface continuous with the right side surface thereof. Such a temperature-sensitive element 150 has, for example, a long side length of 0.4 to 0.6 mm, a short side length of 0.2 to 0.3 mm, and a thickness direction length of 0.1 to 0. 0.3 mm. In the temperature-sensitive element 150, the electrical resistance greatly changes due to the temperature change, and the output voltage changes due to the change in the resistance value. Obtainable. The voltage between the connection terminals 151 a and 151 b of the temperature sensing element 150 is output to the outside of the crystal device 10 via the external terminals 162 c and 162 d of the mounting frame 160. For example, temperature information can be obtained by converting the output voltage into a temperature by a main IC (not shown) such as an electronic device. By arranging such a temperature sensing element 150 near the crystal element 120 and controlling the driving voltage of the crystal element 120 by the main IC according to the temperature information of the crystal element 120 obtained by this, the temperature compensation is performed. Is performed.

  When a platinum resistance temperature detector is used as the temperature sensing element 150, a platinum electrode is provided by depositing platinum at the center on a rectangular parallelepiped ceramic plate. Further, connection terminals 151a and 151b are provided at both ends of the ceramic plate. The platinum electrode and the connection terminals 151a, 151b are connected by a lead electrode provided on the upper surface of the ceramic plate. Then, an insulating resin is provided so as to cover the upper surface of the platinum electrode.

  When a diode is used as the temperature sensing element 150, the semiconductor element is mounted on the upper surface of the semiconductor element substrate, and the upper surface of the semiconductor element substrate including the semiconductor element is covered with an insulating resin. Connection terminals 151a and 151b serving as an anode terminal and a cathode terminal are provided from the lower surface to the side surface of the semiconductor element substrate. The temperature sensing element 150 has a forward characteristic in which current flows from the anode terminal to the cathode terminal, but hardly flows from the cathode terminal to the anode terminal. The forward characteristic of the temperature-sensitive element 150 changes greatly depending on the temperature. Therefore, voltage information can be obtained by measuring a forward voltage while applying a constant current to the temperature sensing element 150. By converting the voltage information, the temperature information of the crystal element 120 can be obtained. The forward voltage of the diode and the temperature show a linear relationship. The voltage between the cathode terminal and the anode terminal, which are the connection terminals 151a and 151b, is output to the outside of the crystal device 10 via the external terminals 162c and 162d.

  As shown in FIGS. 2, 3, and 5, the temperature sensing element 150 is mounted on connection pads 117a and 117b provided on the lower surface of the substrate 110a via a conductive bonding material 180 such as solder. At this time, the connection terminal 151a is connected to the connection pad 117a, and the connection terminal 151b is connected to the connection pad 117b. The connection pad 117b is connected to the bonding terminal 112c via a connection pattern 118b provided on the lower surface of the substrate 110a. In addition, the bonding terminal 112c is electrically connected to the external terminal 162c by being bonded to the bonding pad 161c of the mounting frame 160. The external terminal 162c serves as a ground terminal by being connected to ground, which is a reference potential on a mounting board of an electronic device or the like. Therefore, the connection terminal 151b of the temperature sensing element 150 is connected to the ground which is the reference potential.

  A method for joining the temperature sensing element 150 to the substrate 110a will be described. First, the conductive bonding material 180 is applied to the connection pads 117a and 117b by, for example, a dispenser, and the temperature-sensitive element 150 is mounted on the conductive bonding material 180. Then, the conductive bonding material 180 is melted by heating the conductive bonding material 180, so that the temperature-sensitive element 150 is bonded to the connection pads 117a and 117b.

  The conductive bonding material 180 is made of, for example, silver paste or lead-free solder, and contains a solvent for adjusting the viscosity to be easily applied. A lead-free solder having a component ratio of, for example, 95 to 97.5% of tin, 2 to 4% of silver, and 0.5 to 1.0% of copper is used.

  Although not shown, the temperature sensing element 150 may be arranged such that the long side direction (longitudinal direction) of the temperature sensing element 150 is orthogonal to the long side direction (longitudinal direction) of the substrate 110a. . By doing so, the distance between the connection terminal 112a electrically connected to the crystal element 120 and the connection pad 117a can be increased, and the distance between the connection terminal 112b electrically connected to the crystal element 120 and the connection pad 117b can be increased. Can be long. Therefore, even if the conductive bonding material 180 bonding the temperature sensing element 150 overflows, it is possible to suppress the conductive bonding material 180 from adhering to the bonding terminals 112a and 112b. Therefore, a short circuit between the junction terminals 112 a and 112 b electrically connected to the crystal element 120 and the temperature sensing element 150 can be reduced.

  The lid 130 is made of, for example, an alloy containing at least one of iron, nickel, and cobalt, and hermetically seals the housing portion K1 in a vacuum state or the housing portion K1 filled with nitrogen gas or the like. Specifically, the cover 130 is placed on the frame 110b of the package 110 in a predetermined atmosphere, and a predetermined current is applied to the sealing conductor pattern 119 of the frame 110b and the joining member 131 of the cover 130. By performing the seam welding, the lid 130 is joined to the frame 110b.

  The lid 130 is electrically connected to the bonding terminal 112c on the lower surface of the substrate 110a via the sealing conductor pattern 119 and the via conductor 114c. The bonding terminal 112c is electrically connected to the bonding pad 161c via the conductive bonding material 170. The bonding pad 161c is electrically connected to the external terminal 162c via the bonding pattern 163c. Thus, the lid 130 is electrically connected to the external terminals 162c of the mounting frame 160.

  The joining member 131 is provided on the periphery of the lid 130 and faces the sealing conductor pattern 119 provided on the upper surface of the frame 110 b of the package 110. The joining member 131 is provided by, for example, silver brazing or gold tin. As the silver braze, for example, one having a thickness of 10 to 20 μm, a component ratio of 72 to 85% silver, and a copper of 15 to 28% is used. For example, gold tin having a thickness of 10 to 40 μm, a component ratio of gold of 78 to 82%, and tin of 18 to 22% is used.

  As described above, the crystal device 10 includes a rectangular substrate 110a, a mounting frame 160 provided along the outer peripheral edge of the lower surface of the substrate 110a, and electrode pads 111a and 111b provided on the upper surface of the substrate 110a. Connection pads 117a and 117b provided on the lower surface of the substrate 110a; bonding terminals 112a to 112d provided on the lower surface of the substrate 110a and electrically connected to the electrode pads 111a and 111b and the connection pads 117a and 117b; Connection patterns 118a, 118b provided on the lower surface of the semiconductor chip and electrically connecting the bonding terminals 112c, 112d to the connection pads 117a, 117b, a crystal element 120 mounted on the electrode pads 111a, 111b, and connection pads 117a, 117b. Temperature sensing element 150 mounted on the The groove M1~M6 provided, and a.

  Thus, according to the quartz crystal device 10, when the temperature sensing element 150 is mounted on the connection pads 117a and 117b via the conductive bonding material 180, the conductive bonding material 180 flows out onto the connection patterns 118a and 118b. Since this is suppressed by the grooves M1 and M2, the mounting strength of the temperature sensing element 150 can be improved. Further, according to the crystal device 10, when the package 110 (joining terminals 112a to 112d) is mounted on the mounting frame 160 (joining pads 161a to 161d) via the conductive joining material 170, the conductive joining material 170 is Since the flow out onto the connection patterns 118a and 118b can be suppressed by the grooves M3 to M6, the mounting strength of the package 110 can be improved. Further, by suppressing the flow of the conductive bonding materials 170 and 180 by the grooves M1 to M6, an electrical short circuit is less likely to occur.

<Modification 1>
Hereinafter, a first modification of the first embodiment will be described. As shown in FIG. 7A, the quartz crystal device 11 of the first modification is different from the quartz device 11 in that insulating layers 167a to 167d are provided on the upper surface of the mounting frame 160 so as to cross the bonding patterns 163a to 163d. This is different from the first embodiment.

  In the quartz crystal device 11, insulating layers 167a to 167d are provided on the upper surface of the mounting frame 160 so as to cross at least a part of the bonding patterns 163a to 163d in the width direction. The insulating layers 167a to 167d are formed by applying an alkali-developable solder resist, a UV-curable solder resist, a thermosetting solder resist, or the like, and curing the same.

  In the crystal device 11, insulating layers 167a to 167d are provided on the upper surface of the mounting frame 160 so as to cross the bonding patterns 163a to 163d. Thus, the conductive bonding material 170 (FIGS. 2 and 3) for connecting the bonding pads 161a to 161d and the bonding terminals 112a to 112d is damped by the insulating layers 167a to 167d. Therefore, it is possible to prevent the conductive bonding material 170 from flowing out of the bonding pads 161a to 161d onto the bonding patterns 163a to 163d. The flow of the conductive bonding material 170 causes a reduction in bonding strength and an electrical short circuit.

  Further, in the first modification, as shown in FIG. 7B, insulating layers 167e to 167h are provided on the lower surface of the mounting frame 160 so as to cross the bonding patterns 163a to 163d. The insulating layers 167e to 167h also have the same function as the insulating layers 167a to 167d.

<Modification 2>
Hereinafter, Modification 2 of Embodiment 1 will be described. As shown in FIG. 8A, the quartz crystal device 12 of the second modification is different from the crystal device 12 in that the recesses 168a to 168d are provided on the upper surface of the mounting This is different from the first embodiment. The depressions 168a to 168d have the same configuration and operation as the above-described “groove”.

  The bonding patterns 163a to 163d have, for example, a three-layer structure, in which molybdenum (Mo) is formed in a lower layer, nickel (Ni) is formed in an intermediate layer, and gold (Au) is formed in an upper layer. The recesses 168a to 168d are provided on the upper surface of the mounting frame 160 so as to cross at least a part of the bonding patterns 163a to 163d in the width direction.

  The crystal device 12 is provided with depressions 168a to 168d on the upper surface of the mounting frame 160 so as to cross the bonding patterns 163a to 163d. The recesses 168a to 168d move from the bonding pads 161a to 161d onto the bonding patterns 163a to 163d when the mounting frame 160 is bonded to the lower surface of the substrate 110a via the conductive bonding material 170 (FIGS. 2 and 3). This is for suppressing the conductive bonding material 170 from flowing out. The flow of the conductive bonding material 170 causes a reduction in bonding strength and an electrical short circuit.

  Further, as shown in FIG. 8C, convex portions 160a and 160b may be provided at the edge of the concave portion 168a. At least the surfaces of the protrusions 160a and 160b are made of a metal oxide. Thereby, the spread of the conductive bonding material 170 can be suppressed by the physical action of the protrusions 160a and 160b forming a dam and the chemical action of preventing the metal oxide from being wet. As a result, even if the conductive bonding material 170 applied to the bonding pad 161a flows out, the conductive bonding material 170 is blocked by the protrusions 160a and 160b in addition to the recessed portion 168a, so that the conductive bonding material 170 flows out onto the bonding pattern 163a. It can be further suppressed. Protrusions 160a and 160b may be provided on the edges of the recesses 168b to 168d as well as the recesses 168a. The depressions 168a to 168d can be formed by, for example, laser processing. At that time, the protrusions 160a and 160b can be formed at the same time by adjusting the laser power. As shown in the figure, the protrusions 160a and 160b may be provided at two positions on the bonding pad 161a side and the bonding pattern 163a side, or at only one of them.

  In addition, as shown in FIG. 8B, recesses 168 e to 168 h may be provided on the lower surface of the mounting frame 160. The depressions 168e to 168h also have the same function as the depressions 168a to 168d.

<Modification 3>
Hereinafter, a third modification of the first embodiment will be described. As shown in FIGS. 9 to 11, in the quartz crystal device 13 of the third modification, the concave portion K3 formed by the mounting frame 160 and the substrate 110a does not overlap the electrode pads 111a and 111b when seen through the plane. It differs from the first embodiment in that it is provided at a position.

  As shown in FIG. 11, a line passing through the center of the short side of the substrate 110a and parallel to the long side is defined as an axis L1, and a line passing through the center of the long side of the substrate 110a and parallel to the short side is defined as an axis L2. The intersection of the axis L1 and the axis L2 is defined as a center point P1. In addition, a line passing through the center of the long side of the concave portion K3 and parallel to the long side of the substrate 110a is defined as an axis L1, and a line passing through the center of the short side of the concave portion K3 and parallel to the short side of the substrate 110a is defined as an axis L3. . The intersection of the axis L1 and the axis L3 is defined as a center point P2.

  The connection pads 117a and 117b are provided so as to be shifted in the direction opposite to the direction in which the electrode pads 111a and 111b are provided with respect to the center point P1 of the substrate 110a when viewed through a plane.

  The concave portion K3 is provided at a position that does not overlap with the electrode pads 111a and 111b when seen through the plane. Since the electrode pads 111a and 111b and the recess K3 are provided at positions where they do not overlap with each other, the vertical thickness obtained by adding the substrate 110a and the mounting frame 160 at the positions of the electrode pads 111a and 111b is secured. Stress generated by expansion and contraction of the substrate 110a due to a change in the ambient temperature of the crystal device 13 can be reduced. Therefore, the stress transmitted to the crystal element 120 can be reduced, and the characteristic fluctuation of the crystal device 13, for example, the hysteresis, which is the fluctuation of the frequency temperature characteristic, can be reduced.

  Further, the center point P2 of the concave portion K3 is provided in a direction opposite to the direction in which the electrode pads 111a and 111b are provided from the center point P1 of the substrate 110a when seen through the plane. That is, the center point P1 of the substrate 110a and the center point P2 of the concave portion K3 are provided at positions where they do not overlap in plan view. This makes it more difficult for the electrode pads 111a, 111b and the concave portion K3 to overlap when viewed through the plane, so that the vertical thickness of the substrate 110a plus the mounting frame 160 at the positions of the electrode pads 111a, 111b is sufficient. Thus, the stress generated by the expansion and contraction of the substrate 110a due to the change in the ambient temperature of the crystal device 13 can be further reduced. Therefore, the stress transmitted to the crystal element 120 can be further reduced, and the characteristic fluctuation of the crystal device 13, for example, the hysteresis which is the fluctuation of the frequency temperature characteristic can be further reduced.

  The crystal device 13 is provided at a position where the concave portion K3 formed by the mounting frame 160 and the substrate 110a does not overlap with the electrode pads 111a and 111b when seen through the plane. Thus, the vertical thickness of the substrate 110a plus the mounting frame 160 is secured at the positions of the electrode pads 111a and 111b, so that the stress generated by the expansion and contraction of the substrate 110a due to the change in the ambient temperature of the crystal device 13 is obtained. Can be reduced. Therefore, the stress transmitted to the crystal element 120 can be reduced, and the characteristic fluctuation of the crystal device 13, for example, the hysteresis, which is the fluctuation of the frequency temperature characteristic, can be reduced.

  Further, the temperature sensing element 150 is arranged such that the long side direction (longitudinal direction) of the temperature sensing element 150 is orthogonal to the long side direction (longitudinal direction) of the substrate 110a. Thereby, the bonding terminal 112a electrically connected to the crystal element 120 can have a longer distance from the connection pad 117a, and the bonding terminal 112b electrically connected to the crystal element 120 can have a longer distance from the connection pad 117b. . Therefore, even if the conductive bonding material 180 for bonding the temperature sensing element 150 overflows, it is possible to suppress the conductive bonding material 170 from adhering to the bonding terminals 112a and 112b. Therefore, a short circuit between the junction terminals 112 a and 112 b electrically connected to the crystal element 120 and the temperature sensing element 150 can be reduced.

  Further, the center point P2 of the concave portion K3 is provided in a direction opposite to the direction in which the electrode pads 111a and 111b are provided from the center point P1 of the substrate 110a when seen through the plane. This makes it more difficult for the electrode pads 111a, 111b and the concave portion K3 to overlap when viewed through the plane, so that the vertical thickness of the substrate 110a plus the mounting frame 160 at the positions of the electrode pads 111a, 111b is sufficient. Thus, the stress generated by the expansion and contraction of the substrate 110a due to the change in the ambient temperature of the crystal device 13 can be further reduced. Therefore, the stress transmitted to the crystal element 120 can be further reduced, and the characteristic fluctuation of the crystal device 13, for example, the hysteresis which is the fluctuation of the frequency temperature characteristic can be further reduced.

  As shown in FIG. 10, an insulating resin 190 is provided in the gap G. At this time, the crystal device 13 is mounted on a mounting substrate such as an electronic device, and other electronic components such as a power amplifier mounted on the mounting substrate generate heat, and the heat is transmitted to the concave portion K3 via the mounting substrate. Suppose. Even in such a case, since the insulating resin 190 provided in the gap G is exposed to the outside, the heat is transmitted to the insulating resin 190 in the concave portion K3 and released to the outside. Thereby, the influence of heat on the temperature sensing element 150 mounted in the concave portion K3 can be further reduced. Therefore, the crystal device 13 can reduce the difference between the temperature obtained by converting the voltage output from the temperature sensing element 150 and the actual temperature around the crystal element 120.

  Further, since the insulating resin 190 is provided in the gap G, the temperature-sensitive element 150 is securely fixed by the insulating resin 190, so that peeling of the temperature-sensitive element 150 from the substrate 110a can be suppressed.

<Others>
The crystal device configured as described above is mounted on the surface of the printed circuit board that constitutes the electronic device by fixing the bottom surface of the external terminal to the printed circuit board by soldering, Au bump, conductive adhesive, or the like. . The crystal device is used as an oscillation source in various electronic devices such as a personal computer, a clock, a game machine, a communication device, and a vehicle-mounted device such as a car navigation system. Such a crystal device can reduce the difference between the temperature obtained by converting the voltage output from the temperature-sensitive element and the actual ambient temperature of the crystal element, so that it can be easily corrected by the IC of the electronic device. Therefore, a stable oscillation frequency can be output. Therefore, the electronic apparatus having the quartz crystal device according to the above-described embodiment and each modified example can operate with high reliability and accuracy.

  As described above, the present invention has been described with reference to the above embodiment and each of the modifications, but the present invention is not limited to these. Various changes that can be understood by those skilled in the art can be added to the configuration and details of the present invention. The present invention also includes a configuration in which some or all of the configurations of the above-described embodiment and each of the modifications are appropriately combined with each other.

  For example, in the above embodiment and each of the modifications, the case where the frame is provided on the upper surface of the substrate has been described, but the frame may not be provided. In this case, the lid may include a rectangular sealing base and a sealing frame provided along the outer peripheral edge of the lower surface of the sealing base. In such a lid, an accommodation space is formed by the lower surface of the sealing base and the inner surface of the sealing frame. The sealing base and the sealing frame are made of, for example, an alloy containing at least one of iron, nickel, and cobalt, and are integrally formed. Such a sealing lid is for hermetically sealing the accommodation space in a vacuum state or the accommodation space filled with nitrogen gas or the like. Specifically, in a predetermined atmosphere, the lid is placed on the upper surface of the plate-like substrate, and the bonding member provided between the upper surface of the substrate and the lower surface of the sealing frame portion is heated, so that the substrate is heated. The lid is melt bonded.

10, 11, 12, 13 Crystal device 110 Package 110a Substrate 110b Frame 111a, 111b Electrode pad 112a, 112b, 112c, 112d Joint terminal 113a, 113b Wiring pattern 114a, 114b, 114c Via conductor 115a, 115b Convex portion 117a, 117b , 217a, 217b Connection pad 118a, 118b Connection pattern 119 Sealing conductor pattern 120 Crystal element 121 Crystal plate 122a, 122b Excitation electrode 123a, 123b Extraction electrode 130 Cover 131 Joint member 140 Conductive adhesive 150 Temperature sensitive element 151a , 151b Connection terminal 160 Mounting frame 160a, 160b Convex part 161a, 161b, 161c, 161d Bonding pad 162a, 162b, 162c, 162d External terminal 1 3a, 163b, 163c, 163d bonding pattern 164a, 164b, 164c, 164d upper surface portion 165a, 165b, 165c, 165d side portions 166a, 166b, 166c, 166d lower surface portion 167a, 167b, 167c, 167d,
167e, 167f, 167g, 167h Insulating layers 168a, 168b, 168c, 168d,
168e, 168f, 168g, 168h Depression 169 Projection 170, 180 Conductive bonding material 190 Insulating resin G Gap K1 Housing K2, K3 Concave L1, L2, L3 Axis M1, M2, M3, M4, M5, M6 Grooves m1, m2 Convex parts P1, P2 Center point W width

Claims (9)

A rectangular substrate;
A mounting frame provided along the outer peripheral edge of the lower surface of the substrate,
An electrode pad provided on the upper surface of the substrate,
Connection pads provided on the lower surface of the substrate,
A bonding terminal provided on the lower surface of the substrate and electrically connected to the electrode pad and the connection pad;
A connection pattern provided on the lower surface of the substrate, for electrically connecting the joining terminal and the connection pad;
A crystal element mounted on the electrode pad,
A temperature-sensitive element mounted on the connection pad;
A groove provided in the connection pattern;
Crystal device with The crystal device according to claim 1, wherein
A bonding pad provided on an upper surface of the mounting frame body and electrically connected to the bonding terminal;
An external terminal provided on a lower surface of the mounting frame body and electrically connected to the bonding pad;
A bonding pattern that is provided on a side surface to an upper surface of the mounting frame body and electrically connects the external terminal and the bonding pad;
A crystal device, wherein an insulating layer is provided on an upper surface of the mounting frame so as to cross the bonding pattern. The crystal device according to claim 1, wherein
A bonding pad provided on an upper surface of the mounting frame body and electrically connected to the bonding terminal;
An external terminal provided on a lower surface of the mounting frame body and electrically connected to the bonding pad;
A bonding pattern that is provided on a side surface to an upper surface of the mounting frame body and electrically connects the external terminal and the bonding pad;
A crystal device, wherein a recess is provided on an upper surface of the mounting frame so as to cross the bonding pattern. The crystal device according to claim 1, wherein:
A crystal device, wherein a concave portion formed by the mounting frame and the substrate is provided at a position where the concave portion does not overlap with the electrode pad when viewed through a plane. The crystal device according to claim 1, wherein:
A crystal device, wherein the temperature-sensitive element is arranged such that a longitudinal direction of the temperature-sensitive element is orthogonal to a longitudinal direction of the substrate. The crystal device according to claim 1, wherein:
A quartz device provided with an insulating resin for covering the temperature-sensitive element. The crystal device according to claim 1, wherein:
A crystal device, wherein a gap is provided between the mounting frame and the substrate. The crystal device according to claim 7, wherein
A crystal device, wherein an insulating resin is provided in the gap.   An electronic apparatus comprising the crystal device according to claim 1.

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