CN105097504A - Manufacturing process of crystal diode - Google Patents
Manufacturing process of crystal diode Download PDFInfo
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- CN105097504A CN105097504A CN201510418282.1A CN201510418282A CN105097504A CN 105097504 A CN105097504 A CN 105097504A CN 201510418282 A CN201510418282 A CN 201510418282A CN 105097504 A CN105097504 A CN 105097504A
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Abstract
The invention relates to a manufacturing process of a crystal diode. The manufacturing process comprises the following steps: (S1) wafer cutting; (S2) wafer assembly, namely putting a wafer lead on a lead track, sequentially grabbing each wafer to put into the wafer lead, and cutting the wafer lead into wafer lead segments of 216-360 products through a segmentation machine, and sequentially putting the wafer lead segments into the lead box; (S3) wire soldering, namely transferring the lead box with the wafer lead segments into a work bench of a wire soldering machine, adjusting the power of the wire soldering machine to be 30-50mW, the pressure to be 250-350mN and the temperature to be 240-320 DEG C, putting each wafer lead segment in the lead box on the wire soldering machine for wire soldering, so as to obtain the wafers with pins; (S4) injection molding; (S5) electroplating; (S6) separating; (S7) testing; and (S8) band loading, namely loading the tested and qualified crystal diodes to a stripped carrier band with a band loading mechanism, and carrying out plastic packaging to obtain the product. The manufacturing process has the advantages that transportation is facilitated in the manufacturing process; the product quality is improved; and classified transportation or storage is facilitated.
Description
Technical field
The present invention relates to the production technical field of diode, particularly a kind of manufacturing process of crystal diode.
Background technology
In electronic industry circle, diode has become the primary element of various electronic product, and respectively there is a pin at traditional diode two ends, needs the pin of diode to insert in the hole that circuit board is arranged during use, and diode can be fixed on circuit board.But, current whole world electronic product is as all short and small for research and development target to wrap clearly in phone, television set, facsimile machine, computer and peripheral product thereof, the many use bilayers of its circuit board technology or multilayer circuit plate technique, but double-deck or multilayer circuit plate technique cannot burrow as in traditional single layer board, so require that diode volume is as far as possible little.
Along with the volume of diode progressively reduces, its difficulty of processing is also increasing, its production cost is also significantly improved, and in process of production, because its volume is little, transhipment between different workshop section is quite difficult, then assembling, needing the manpower and materials of at substantial to classify to each diode part.For finished product, its small volume, all there is larger inconvenience in transport and storage.
Summary of the invention
The object of the invention is to the shortcoming overcoming prior art, the manufacturing process of the crystal diode transporting conveniently, improve the quality of products and be convenient to classification transport or storage being provided in a kind of manufacture process.
Object of the present invention is achieved through the following technical solutions: a kind of manufacturing process of crystal diode, comprises the following steps:
S1, wafer cut: cut by special cutting device by the wafer stock dish being loaded with wafer, make each wafer in square, and diameter are between 0.21 ~ 1.0mm;
S2, wafer assemble: be placed in by wafer lead-in wire on lead-in wire track, being captured successively by every block wafer on wafer stock dish by manipulator is placed in wafer lead-in wire, wafer lead-in wire is divided into the wafer lead segments of 216 ~ 360 granule products by section machine, and is contained in successively in pull box;
S3, bonding wire: the pull box that wafer lead segments is housed is moved on bonding equipment workbench, the power regulating bonding equipment is 30 ~ 50mW, pressure is 250 ~ 350mN, temperature is 240 ~ 320 DEG C, each block wafer lead segments in pull box is placed on bonding equipment and carries out bonding wire, obtain the wafer of pin;
S4, injection moulding: the wafer of the band pin after being completed by bonding wire in step S3 is encapsulated by injection molding machine epoxy-plastic packaging material;
S5, plating: the pin on wafer plates one deck tin, thickness is 10 ~ 15 μm;
S6, separation: the wafer with pin after being electroplated by step S5 is separated from wafer lead segments, is accommodated in box;
S7, test: test each pin, eliminate the crystal diode not meeting electric performance test requirement;
S8, upper band: the crystal diode loading mechanism of test passes is loaded on banded carrier band, and by carrying out plastic packaging, obtains product.
Also comprise the step of a mark of carving characters after described step S5, carry out respectively carving characters by carving machine and marking machine in wafer surface, mark.
The special cutting device adopted in described step S1 is diamond saw or scroll saw.
The present invention has the following advantages:
1, the product wafer size produced according to reality adopts diamond saw or scroll saw to cut.Diamond saw can obtain the wafer than requiring size thicker, and diamond saw also contributes to reducing to the damage of wafer, uneven thickness, bending and warpage defect; The progress of scroll saw technology reduces silicon wafer thickness and reduces the spillage of material in cutting process, improves productivity, and decreases the consumption of silicon materials by thinner silicon chip.
2, wafer lead segments is carried out cutting rear transhipment, simple to operation, and contribute to the smooth enforcement of the technical process such as bonding wire, injection moulding, plating in later stage.
3, when bonding wire, strictly control power, pressure and temperature, make the stability of product higher, product quality is better.
4, on pin, plate one deck tin, make pin have good solderability, improve the experience effect of user.
5, crystal diode is loaded on carrier band, and carries out plastic packaging process, to avoid in transportation friction each other to cause it impaired, and it is regular to case, and is convenient to classified storage, especially seems particularly outstanding to the crystal diode of microstructure.
Embodiment
Below in conjunction with embodiment, the present invention will be further described, but protection scope of the present invention is not limited to the following stated.
[embodiment 1]:
A manufacturing process for crystal diode, comprises the following steps:
S1, wafer cut: cut by special cutting device by the wafer stock dish being loaded with wafer, make each wafer in square, and diameter are 0.21mm;
S2, wafer assemble: be placed in by wafer lead-in wire on lead-in wire track, being captured successively by every block wafer on wafer stock dish by manipulator is placed in wafer lead-in wire, wafer lead-in wire is divided into the wafer lead segments of 360 granule products by section machine, and is contained in successively in pull box;
S3, bonding wire: the pull box that wafer lead segments is housed is moved on bonding equipment workbench, the power regulating bonding equipment is 30mW, and pressure is 250mN, and temperature is 240 DEG C, each block wafer lead segments in pull box is placed on bonding equipment and carries out bonding wire, obtain the wafer of pin;
S4, injection moulding: the wafer of the band pin after being completed by bonding wire in step S3 is encapsulated by injection molding machine epoxy-plastic packaging material;
S5, plating: the pin on wafer plates one deck tin, thickness is 10 μm;
S6, separation: the wafer with pin after being electroplated by step S5 is separated from wafer lead segments, is accommodated in box;
S7, test: test each pin, eliminate the crystal diode not meeting electric performance test requirement;
S8, upper band: the crystal diode loading mechanism of test passes is loaded on banded carrier band, and by carrying out plastic packaging, obtains product.
Also comprise the step of a mark of carving characters after described step S5, carry out respectively carving characters by carving machine and marking machine in wafer surface, mark.
The special cutting device adopted in described step S1 is diamond saw or scroll saw.
[embodiment 2]:
A manufacturing process for crystal diode, comprises the following steps:
S1, wafer cut: cut by special cutting device by the wafer stock dish being loaded with wafer, make each wafer in square, and diameter are 0.6mm;
S2, wafer assemble: be placed in by wafer lead-in wire on lead-in wire track, being captured successively by every block wafer on wafer stock dish by manipulator is placed in wafer lead-in wire, wafer lead-in wire is divided into the wafer lead segments of 288 granule products by section machine, and is contained in successively in pull box;
S3, bonding wire: the pull box that wafer lead segments is housed is moved on bonding equipment workbench, the power regulating bonding equipment is 40mW, and pressure is 300mN, and temperature is 280 DEG C, each block wafer lead segments in pull box is placed on bonding equipment and carries out bonding wire, obtain the wafer of pin;
S4, injection moulding: the wafer of the band pin after being completed by bonding wire in step S3 is encapsulated by injection molding machine epoxy-plastic packaging material;
S5, plating: the pin on wafer plates one deck tin, thickness is 13 μm;
S6, separation: the wafer with pin after being electroplated by step S5 is separated from wafer lead segments, is accommodated in box;
S7, test: test each pin, eliminate the crystal diode not meeting electric performance test requirement;
S8, upper band: the crystal diode loading mechanism of test passes is loaded on banded carrier band, and by carrying out plastic packaging, obtains product.
Also comprise the step of a mark of carving characters after described step S5, carry out respectively carving characters by carving machine and marking machine in wafer surface, mark.
The special cutting device adopted in described step S1 is diamond saw or scroll saw.
[embodiment 3]:
A manufacturing process for crystal diode, comprises the following steps:
S1, wafer cut: cut by special cutting device by the wafer stock dish being loaded with wafer, make each wafer in square, and diameter are 1.0mm;
S2, wafer assemble: be placed in by wafer lead-in wire on lead-in wire track, being captured successively by every block wafer on wafer stock dish by manipulator is placed in wafer lead-in wire, wafer lead-in wire is divided into the wafer lead segments of 216 granule products by section machine, and is contained in successively in pull box;
S3, bonding wire: the pull box that wafer lead segments is housed is moved on bonding equipment workbench, the power regulating bonding equipment is 50mW, and pressure is 350mN, and temperature is 320 DEG C, each block wafer lead segments in pull box is placed on bonding equipment and carries out bonding wire, obtain the wafer of pin;
S4, injection moulding: the wafer of the band pin after being completed by bonding wire in step S3 is encapsulated by injection molding machine epoxy-plastic packaging material;
S5, plating: the pin on wafer plates one deck tin, thickness is 15 μm;
S6, separation: the wafer with pin after being electroplated by step S5 is separated from wafer lead segments, is accommodated in box;
S7, test: test each pin, eliminate the crystal diode not meeting electric performance test requirement;
S8, upper band: the crystal diode loading mechanism of test passes is loaded on banded carrier band, and by carrying out plastic packaging, obtains product.
Also comprise the step of a mark of carving characters after described step S5, carry out respectively carving characters by carving machine and marking machine in wafer surface, mark.
The special cutting device adopted in described step S1 is diamond saw or scroll saw.
Claims (3)
1. a manufacturing process for crystal diode, is characterized in that: comprise the following steps:
S1, wafer cut: cut by special cutting device by the wafer stock dish being loaded with wafer, make each wafer in square, and diameter are between 0.21 ~ 1.0mm;
S2, wafer assemble: be placed in by wafer lead-in wire on lead-in wire track, being captured successively by every block wafer on wafer stock dish by manipulator is placed in wafer lead-in wire, wafer lead-in wire is divided into the wafer lead segments of 216 ~ 360 granule products by section machine, and is contained in successively in pull box;
S3, bonding wire: the pull box that wafer lead segments is housed is moved on bonding equipment workbench, the power regulating bonding equipment is 30 ~ 50mW, pressure is 250 ~ 350mN, temperature is 240 ~ 320 DEG C, each block wafer lead segments in pull box is placed on bonding equipment and carries out bonding wire, obtain the wafer of pin;
S4, injection moulding: the wafer of the band pin after being completed by bonding wire in step S3 is encapsulated by injection molding machine epoxy-plastic packaging material;
S5, plating: the pin on wafer plates one deck tin, thickness is 10 ~ 15 μm;
S6, separation: the wafer with pin after being electroplated by step S5 is separated from wafer lead segments, is accommodated in box;
S7, test: test each pin, eliminate the crystal diode not meeting electric performance test requirement;
S8, upper band: the crystal diode loading mechanism of test passes is loaded on banded carrier band, and by carrying out plastic packaging, obtains product.
2. the manufacturing process of a kind of crystal diode according to claim 1, is characterized in that: the step also comprising a mark of carving characters after described step S5, carries out respectively carving characters, mark in wafer surface by carving machine and marking machine.
3. the manufacturing process of a kind of crystal diode according to claim 1, is characterized in that: the special cutting device adopted in described step S1 is diamond saw or scroll saw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510418282.1A CN105097504B (en) | 2015-07-16 | 2015-07-16 | A kind of manufacturing process of crystal diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510418282.1A CN105097504B (en) | 2015-07-16 | 2015-07-16 | A kind of manufacturing process of crystal diode |
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| CN105097504A true CN105097504A (en) | 2015-11-25 |
| CN105097504B CN105097504B (en) | 2018-08-10 |
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| CN201510418282.1A Active CN105097504B (en) | 2015-07-16 | 2015-07-16 | A kind of manufacturing process of crystal diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057668A (en) * | 2016-06-03 | 2016-10-26 | 揭阳市先捷电子有限公司 | Production process for triode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040266058A1 (en) * | 2003-06-27 | 2004-12-30 | Lee Kong Weng | Method for fabricating a packaging device for semiconductor die and semiconductor device incorporating same |
| US20080006927A1 (en) * | 2000-01-06 | 2008-01-10 | Super Talent Electronics, Inc. | Manufacturing Process For Single-Chip MMC/SD Flash Memory Device With Molded Asymmetric Circuit Board |
| CN104112784A (en) * | 2014-07-10 | 2014-10-22 | 南通康比电子有限公司 | Novel photovoltaic diode and production process thereof |
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2015
- 2015-07-16 CN CN201510418282.1A patent/CN105097504B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080006927A1 (en) * | 2000-01-06 | 2008-01-10 | Super Talent Electronics, Inc. | Manufacturing Process For Single-Chip MMC/SD Flash Memory Device With Molded Asymmetric Circuit Board |
| US20040266058A1 (en) * | 2003-06-27 | 2004-12-30 | Lee Kong Weng | Method for fabricating a packaging device for semiconductor die and semiconductor device incorporating same |
| CN104112784A (en) * | 2014-07-10 | 2014-10-22 | 南通康比电子有限公司 | Novel photovoltaic diode and production process thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057668A (en) * | 2016-06-03 | 2016-10-26 | 揭阳市先捷电子有限公司 | Production process for triode |
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| CN105097504B (en) | 2018-08-10 |
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