CN105070777A - 一种无稀土下转换太阳能电池及其制备方法 - Google Patents

一种无稀土下转换太阳能电池及其制备方法 Download PDF

Info

Publication number
CN105070777A
CN105070777A CN201510458709.0A CN201510458709A CN105070777A CN 105070777 A CN105070777 A CN 105070777A CN 201510458709 A CN201510458709 A CN 201510458709A CN 105070777 A CN105070777 A CN 105070777A
Authority
CN
China
Prior art keywords
solar cell
conversion
layer
nano
nanometer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510458709.0A
Other languages
English (en)
Other versions
CN105070777B (zh
Inventor
陈朝
郑将辉
蔡丽晗
杨星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiamen University
Original Assignee
Xiamen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiamen University filed Critical Xiamen University
Priority to CN201510458709.0A priority Critical patent/CN105070777B/zh
Publication of CN105070777A publication Critical patent/CN105070777A/zh
Application granted granted Critical
Publication of CN105070777B publication Critical patent/CN105070777B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种无稀土下转换太阳能电池及其制备方法，该无稀土下转换太阳能电池从下到上依次设置有铝背电极层、P型硅层、N+型硅层、铝(银)栅线电极，硅金字塔绒面层以及纳米下转换颗粒层，所述纳米下转换颗粒层的纳米颗粒为纳米钒酸盐。该无稀土下转换太阳能电池的制备方法包括：1)通过水热法、溶胶凝胶法、共沉淀法制备纳米钒酸盐；2)通过有机溶剂分散纳米颗粒；3)通过提拉法、旋涂法将纳米颗粒涂覆在硅金字塔绒面表面以形成纳米下转换颗粒层；4)在一定温度下，将样品电池在恒温干燥箱中烘干。该无稀土下转换太阳能电池具有光电转换效率高、工艺简单且成本低的优点。

Description

一种无稀土下转换太阳能电池及其制备方法
技术领域
本发明涉及一种太阳能电池，具体的说是一种利用表面涂覆无稀土的下转换纳米粉体的下转换太阳能电池及其制备方法。
背景技术
能源是人类社会赖以存在和发展的物质基础，是改善人类生活品质的的物质保障。从预测来看，我国的不可再生能源储备远低于世界水平。目前我国的石油和天然气消耗也主要依赖进口，我国储量最丰富的煤炭预计将在60年左右用光。太阳能来源于太阳中的核聚变反应产生的光线对太空的辐射。太阳的体积巨大，核能的能量密度高，与地球的寿命相比，太阳的寿命可以认为是无限长。因此太阳能是一种取之不竭，用之不尽的可再生能源。由于硅材料具有原料丰富、性能良好、污染低等优点，晶体硅电池的使用寿命长达25年以上，而其能源回收期仅需2-3年的时间，能源效益高。因此硅基太阳电池必将成为太阳电池研究开发、生产和应用的主体，并将继续保持。
目前硅太阳能电池的光电转化效率的理论极限是31％(SQ极限)，而目前太阳能电池的转换效率约为18％，远未达到理论极限，其原因之一为太阳能光谱与硅太阳电池的不匹配，太阳光中大于禁带宽度的光子由于穿透深度较小，不能够被太阳能电池所充分吸收，因此如何提高硅太阳能电池对太阳光的利用率，为目前很大研究热点。例如中国专利CN103094394A，公开了一种下转换晶体硅太阳能电池及其制备方法，涉及一种太阳能电池，提供表面涂敷稀土掺杂的一种下转换晶体硅太阳能电池及其制备方法，该下转换晶体硅太阳能电池从下至上依次设P+层、P层、N+层、SiNx层和荧光薄膜层，其主要针对多晶硅太阳电池，并使用稀土掺杂荧光粉来提高电池效率。
发明内容
本发明的目的在于提供一种工艺简单，无需稀土，价格低廉，制备工艺简单，光电转换效率高、的下转换太阳能电池及其制备方法。
本发明提供的技术方案如下一种无稀土下转换太阳能电池，从下到上依次设置有铝背电极层、P型硅层、N+型硅层、铝(银)栅线电极，硅金字塔绒面层以及纳米下转换颗粒层，所述纳米下转换颗粒层的纳米颗粒为纳米钒酸盐。
在本发明的较佳实施例中，所述纳米钒酸盐为Zn3V2O8和/或Ca3V2O8和/或RbVO3和/或CsVO3和/或Mg3V2O8和/或Cd3V2O8。
在本发明的较佳实施例中，所述纳米钒酸盐为Zn3V2O8。
一种无稀土下转换太阳能电池的制备方法，包括以下步骤：
1)通过水热法、溶胶凝胶法、共沉淀法制备纳米钒酸盐Zn3V2O8、Ca3V2O8、RbVO3、CsVO3、Mg3V2O8、Cd3V2O8以作为纳米颗粒使用；
2)通过有机溶剂分散纳米颗粒；
3)通过提拉法、旋涂法将纳米颗粒涂覆在硅金字塔绒面表面以形成纳米下转换颗粒层；
4)在一定温度下，将样品电池在恒温干燥箱中烘干，即得到无稀土下转换太阳能电池。
在步骤2)中，所述有机溶剂采用乙醇。
本发明的优点如下：该无稀土下转换太阳能电池采用纳米钒酸盐来制备纳米下转换颗粒层，该纳米下转换颗粒层能够很好的将近紫外区域的光转换为可见光，是一种良好的用于太阳能电池的下转换材料，无需稀土，价格低廉，并且该无稀土下转换太阳能电池的制备方法工艺简单，容易操作实现，因此该无稀土下转换太阳能电池具有光电转换效率高、工艺简单且成本低的优点。
附图说明
图1为本发明的无稀土下转换太阳能电池的结构示意图；
图2为本发明所使用的纳米钒酸盐Zn3V2O8的反射光谱图；
图3为本发明所使用的纳米钒酸盐Zn3V2O8的激发与发射光谱图；
图4为本发明所使用的纳米钒酸盐Zn3V2O8纳米下转换层的下转换太阳能电池的电
流-电压(I-V)特性曲线图；
图5为本发明所使用的纳米钒酸盐Zn3V2O8下转换层的下转换太阳能电池的外量子
效率(EQE)特性曲线图。
具体实施方式
参见图1，无稀土下转换太阳能电池从下到上依次设置有铝背电极层10、P型硅层20、N+型硅层30、铝(银)栅线电极40，硅金字塔绒面层50以及纳米下转换颗粒层60，纳米下转换颗粒层60的纳米颗粒为纳米钒酸盐Zn3V2O8、Ca3V2O8、RbVO3、CsVO3、Mg3V2O8、Cd3V2O8中的一种或几种,。
以下给出一种无稀土下转换太阳能电池的制备方法的具体实施例。
1)通过水热法制备纳米钒酸盐Zn3V2O8以作为纳米颗粒使用；
2)将获得的Zn3V2O8纳米下转换颗粒用乙醇充分溶解；
3)将该溶液滴至硅金字塔绒面层50表面；
4)然后使用匀胶机6000r/min旋转10s使硅金字塔绒面层50的表面均匀形成纳米下转换颗粒层60；
5)取出放入干燥箱中100℃恒温处理5分钟后，即可得到该下转换太阳能电池。
由图2中Zn3V2O8激发发射光谱图和图3中Zn3V2O8激发与发射光谱图可以看出，该下转换材料Zn3V2O8能够很好的将近紫外区域的光转换为可见光，是一种良好的用于太阳能电池的下转换材料。
由图4中的Zn3V2O8纳米下转换层的下转换太阳能电池的电流-电压(I-V)特性曲线图和图5中的Zn3V2O8下转换层的下转换太阳能电池的外量子效率(EQE)特性曲线图可以看出，该下转换材料Zn3V2O8具有较高的光电转换效率。
综上所述，该无稀土下转换太阳能电池采用纳米钒酸盐来制备纳米下转换颗粒层60，该纳米下转换颗粒层60能够很好的将近紫外区域的光转换为可见光，是一种良好的用于太阳能电池的下转换材料，无需稀土，价格低廉，并且该无稀土下转换太阳能电池的制备方法工艺简单，容易操作实现，因此该无稀土下转换太阳能电池具有效率高、工艺简单且成本低的优点。
上述仅为本发明的一个具体实施例，但本发明的设计构思并不局限于此，凡利用此构思对本发明进行非实质性的改动，均应属于侵犯本发明保护范围的行为。

Claims (5)

1.一种无稀土下转换太阳能电池，其特征在于：从下到上依次设置有铝背电极层、P型硅层、N+型硅层、铝(银)栅线电极，硅金字塔绒面层以及纳米下转换颗粒层，所述纳米下转换颗粒层的纳米颗粒为纳米钒酸盐。
2.根据权利要求1所述的一种无稀土下转换太阳能电池，其特征在于：所述纳米钒酸盐为Zn3V2O8和/或Ca3V2O8和/或RbVO3和/或CsVO3和/或Mg3V2O8和/或Cd3V2O8。
3.根据权利要求2所述的一种无稀土下转换太阳能电池，其特征在于：所述纳米钒酸盐为Zn3V2O8。
4.根据权利要求1所述的无稀土下转换太阳能电池的制备方法，其特征包括以下步骤：
1)通过水热法、溶胶凝胶法、共沉淀法制备纳米钒酸盐Zn3V2O8、Ca3V2O8、RbVO3、CsVO3、Mg3V2O8、Cd3V2O8以作为纳米颗粒使用；
2)通过有机溶剂分散纳米颗粒；
3)通过提拉法、旋涂法将纳米颗粒涂覆在硅金字塔绒面表面以形成纳米下转换颗粒层；
4)在一定温度下，将样品电池在恒温干燥箱中烘干，即得到无稀土下转换太阳能电池。
5.根据权利要求2所述的一种无稀土下转换太阳能电池的制备方法，其特征在于：步骤2)中所述有机溶剂采用乙醇。
CN201510458709.0A 2015-07-30 2015-07-30 一种无稀土下转换太阳能电池及其制备方法 Expired - Fee Related CN105070777B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510458709.0A CN105070777B (zh) 2015-07-30 2015-07-30 一种无稀土下转换太阳能电池及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510458709.0A CN105070777B (zh) 2015-07-30 2015-07-30 一种无稀土下转换太阳能电池及其制备方法

Publications (2)

Publication Number Publication Date
CN105070777A true CN105070777A (zh) 2015-11-18
CN105070777B CN105070777B (zh) 2017-01-11

Family

ID=54500102

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510458709.0A Expired - Fee Related CN105070777B (zh) 2015-07-30 2015-07-30 一种无稀土下转换太阳能电池及其制备方法

Country Status (1)

Country Link
CN (1) CN105070777B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106784334A (zh) * 2017-03-06 2017-05-31 东南大学 一种超宽带吸收的异质结太阳能电池
CN108963000A (zh) * 2018-06-27 2018-12-07 张家港康得新光电材料有限公司 一种光伏板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101771095A (zh) * 2009-01-06 2010-07-07 台湾茂矽电子股份有限公司 太阳能电池
US20100261263A1 (en) * 2009-03-18 2010-10-14 Duke University Up and down conversion systems for production of emitted light from various energy sources
CN102364691A (zh) * 2011-10-19 2012-02-29 中国科学院宁波材料技术与工程研究所 具有上/下转换发光结构的晶体硅太阳能电池及制备方法
TW201233782A (en) * 2011-02-15 2012-08-16 Chung-Yu Wang Phosphor-containing solar cell and fabrication method thereof
CN102683467A (zh) * 2012-05-15 2012-09-19 中国科学院半导体研究所 太阳能电池模块
CN103346203A (zh) * 2013-05-31 2013-10-09 浙江正泰太阳能科技有限公司 一种上转换太阳能电池及其制备方法
JP2014110330A (ja) * 2012-12-03 2014-06-12 Mitsubishi Electric Corp 太陽電池モジュール

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101771095A (zh) * 2009-01-06 2010-07-07 台湾茂矽电子股份有限公司 太阳能电池
US20100261263A1 (en) * 2009-03-18 2010-10-14 Duke University Up and down conversion systems for production of emitted light from various energy sources
TW201233782A (en) * 2011-02-15 2012-08-16 Chung-Yu Wang Phosphor-containing solar cell and fabrication method thereof
CN102364691A (zh) * 2011-10-19 2012-02-29 中国科学院宁波材料技术与工程研究所 具有上/下转换发光结构的晶体硅太阳能电池及制备方法
CN102683467A (zh) * 2012-05-15 2012-09-19 中国科学院半导体研究所 太阳能电池模块
JP2014110330A (ja) * 2012-12-03 2014-06-12 Mitsubishi Electric Corp 太陽電池モジュール
CN103346203A (zh) * 2013-05-31 2013-10-09 浙江正泰太阳能科技有限公司 一种上转换太阳能电池及其制备方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
U. RAMBABU, SANG-DO HAN: "Synthesis and luminescence properties of broad band greenish-yellow emitting LnVO4:Bi3+ and (Ln1, Ln2)VO4:Bi3+ (Ln=La, Gd and Y) as down conversion phosphors", 《CERAMICS INTERNATIONAL》 *
刘军枫: "功能氧化物纳米材料的液相合成与性质研究", 《清华大学博士学位论文》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106784334A (zh) * 2017-03-06 2017-05-31 东南大学 一种超宽带吸收的异质结太阳能电池
CN108963000A (zh) * 2018-06-27 2018-12-07 张家港康得新光电材料有限公司 一种光伏板

Also Published As

Publication number Publication date
CN105070777B (zh) 2017-01-11

Similar Documents

Publication Publication Date Title
Luo et al. Highly efficient core–shell CuInS 2–Mn doped CdS quantum dot sensitized solar cells
Huang et al. Efficient light harvesting by photon downconversion and light trapping in hybrid ZnS nanoparticles/Si nanotips solar cells
CN100517772C (zh) 量子点敏化太阳能电池电极及其制备方法
Wu et al. Enhancing photoelectrical performance of dye-sensitized solar cell by doping with europium-doped yttria rare-earth oxide
CN101789462B (zh) 一种广谱吸收的黑硅太阳能电池结构及其制作方法
CN104362412A (zh) 一种ZnO/g-C3N4纳米复合材料及其制备方法
CN104409642A (zh) 一种钙钛矿/p型量子点复合结构太阳能电池的制备方法
CN101901693A (zh) 石墨烯复合染料敏化太阳能电池的光阳极及其制备方法
CN102074374B (zh) 掺杂染料敏化太阳电池光阳极、其制备方法及其应用
CN102074590A (zh) 碲化镉薄膜太阳能电池结构中的背接触电极及制备方法
CN105568313A (zh) 3d分枝状半导体纳米异质结光电极材料及其制备方法
CN106128772B (zh) 一种硫化铅量子点光伏电池的制备方法
Pushparaj et al. Employing novel Si-over-Si technology to optimize PV effect in solar array
Zhang et al. Semiconductor photovoltaic cells
Ren et al. Investigation of germanium selenide electrodes for the integrated photo‐rechargeable battery
CN106129249B (zh) 一种钙钛矿-量子点双吸收层太阳能电池及其制备方法
CN102157617B (zh) 一种硅基纳米线太阳电池的制备方法
CN105070777B (zh) 一种无稀土下转换太阳能电池及其制备方法
Yang et al. Effect of tube depth on the photovoltaic performance of CdS quantum dots sensitized ZnO nanotubes solar cells
Meng et al. Dye modification with photovoltaic enhancement for CdS quantum dots sensitized solar cell based on three-dimensional ZnO spheres
CN102930995A (zh) 一种量子点修饰有机无机杂化太阳能电池及其制备方法
CN102254693B (zh) 染料敏化太阳电池光阳极的制备方法
CN102324309B (zh) 染料敏化太阳能电池光阳极用氧化锌复合纳米结构及制法
Shao et al. CdSe quantum dot-sensitized solar cell: effect of size and attach mode of quantum dot
CN104659124B (zh) 一种太阳能电池吸收层材料及其制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170111

Termination date: 20210730

CF01 Termination of patent right due to non-payment of annual fee