CN106129249B - 一种钙钛矿-量子点双吸收层太阳能电池及其制备方法 - Google Patents
一种钙钛矿-量子点双吸收层太阳能电池及其制备方法 Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 37
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000002073 nanorod Substances 0.000 claims abstract description 20
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 20
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 20
- 230000031700 light absorption Effects 0.000 claims abstract description 19
- 230000005540 biological transmission Effects 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000004528 spin coating Methods 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 4
- 150000005309 metal halides Chemical class 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 229910003087 TiOx Inorganic materials 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000011049 filling Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000001228 spectrum Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 5
- 229960001296 zinc oxide Drugs 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000005612 types of electricity Effects 0.000 description 1
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Abstract
本发明公开了一种钙钛矿‑量子点双吸收层太阳能电池及其制备方法,该电池由透明电极、致密层、氧化物纳米棒、钙钛矿结构吸光层、量子点层、空穴传输层和金属对电极构成。吸光层是有机金属卤化物钙钛矿材料,量子点是具有红外光电转换特性的量子点。量子点与钙钛矿结构吸光层分段填充于纳米棒之间。制备步骤为:在电极上制备致密层;再制备氧化物纳米棒;在纳米棒填充聚甲基丙烯酸甲酯作为阻挡层;刻蚀露出纳米棒顶部;在其顶部制备量子点层;去除聚甲基丙烯酸甲酯;在纳米棒上旋涂制备钙钛矿结构吸光层;再制作空穴传输层;再在其上制备金属对电极。本发明量子点与吸光层分段沿纳米棒轴向填充,具有宽光谱吸收的特点,电池光电转换效率高。
Description
技术领域
本发明属于太阳能电池领域,涉及光电材料制备技术,具体指一种钙钛矿-量子点双吸收层太阳能电池及其制备方法。
背景技术
随着全球能源需求的持续增长和对温室气体减排的关注,发展清洁、可再生新能源越来越受到世界各国的关注。利用光伏发电是解决能源问题和环境问题的重要途径之一。钙钛矿太阳能电池是近年来发展起来的一种新型太阳能电池,具有许多其他类型的电池无法比拟的优点。在短短6年多的时间内,其效率已经超过了20%,具有十分重要的研究价值及应用前景。
对于半导体太阳能电池而言,其光吸收范围主要由材料的禁带宽度决定。然而,与其他半导体太阳能电池相似,钙钛矿太阳能电池由于受其禁带宽度(1.57eV)的限制,能量转换主要集中在可见光部分(800nm以下)。即便是近两年新发现的FAPbI3(HC(NH2)2PbI3)型钙钛矿材料,其吸收光谱也只能扩展到840nm。我们知道红外光总能量在太阳辐射中所占比例超过40%,且其主要能量集中于近红外部分。也就是说,虽然目前钙钛矿电池已获得较高的转换效率,但是仍有很大部分的太阳光被浪费。充分利用近红外光对于提高钙钛矿电池的效率具有重要意义。
量子点是一类禁带宽度可调的新型半导体材料,可以通过对尺寸的调控获得量子点对不同波段光的响应。量子点太阳能电池近年来也获得了很好的发展,具有重要潜力。其中,将吸收不同波段太阳光的量子点在光阳极上分段复合敏化是提高量子点电池光吸收范围、进而提升电池效率的重要手段。利用红外光吸收量子点弥补钙钛矿材料对红外光吸收的不足,可以有效增加电池的光吸收范围,提高电池效率。
叠层太阳能电池是目前获得全光谱吸收太阳能电池的有效途径之一。叠层电池中不同禁带宽度的半导体材料按顺序堆叠,分别吸收不同波段的太阳能,达到对太阳光的有效吸收利用。量子点与钙钛矿材料的分层结构是以叠层电池的理念来优化吸光材料的分布,更有利于每种材料对不同波段光的充分吸收。纳米棒是近年来发展起来的一种具有优良电子传导性能的新型材料。利用纳米棒可有效实现钙钛矿层与量子点层的分段组装,获得具有双层结构的吸光层。综上所述,一种钙钛矿-量子点双吸收层太阳能电池及其制备方法具有非常重要的应用前景。
发明内容
本发明的目的是提供一种钙钛矿-量子点双吸收层太阳能电池及其制备方法。
本发明所涉及的一种钙钛矿-量子点双吸收层太阳能电池,由透明电极(1)、致密层(2)、氧化物纳米棒(3)、钙钛矿结构吸光层(4)、量子点层(5)、空穴传输层(6)和金属对电极(7)构成。电池的具体制备步骤如下:
(a)在透明导电的电极(1)上制备10-100纳米厚的致密层(2);
(b)在上述获得的致密层(2)基础上,利用水热法制备一层厚度为0.5-3微米长度的氧化物纳米棒(3);
(c)在上述制备得到的氧化物纳米棒(3)基础上,利用旋涂法在纳米棒阵列上填充一层聚甲基丙烯酸甲酯(PMMA)作为阻挡层,接着用等离子体刻蚀去除纳米棒顶部的PMMA,露出0.1-1.5微米的纳米棒;
(d)利用连续离子层吸附反应法在露出的氧化物纳米棒(3)上制备量子点层(5);
(e)去除剩余的PMMA;
(f)在上述样品上旋涂制备厚度为0.4-1.5微米的钙钛矿结构吸光层(4);
(g)在上述获得的样品表面制作厚度为0.2-2微米的空穴传输层(6);
(h)利用真空热蒸镀或电子束蒸镀在空穴传输层(6)表面蒸镀一层厚度为50~100纳米的金属对电极(7)。
所述氧化物纳米棒是氧化锌或者氧化钛纳米棒/线;
所述的钙钛矿结构吸光层是指有机金属卤化物钙钛矿材料,如CH3NH3PbI3,CH3NH3PbCl3等;
所述量子点是具有红外光吸收特性的量子点,如PbS,PbSe等。
本发明的优点是:量子点与钙钛矿结构吸光层分段沿纳米棒轴向填充,有利于载流子的有效传输,双吸收层结构能有效拓宽电池的光谱吸收范围。本发明的太阳能电池具有宽光谱吸收的特点,电池光电转换效率高。
附图说明
图1为钙钛矿-量子点双吸收层太阳能电池的结构示意图
其中1----透明电极、2----致密层、3----氧化物纳米棒、4----钙钛矿结构吸光层、5----量子点层、6----空穴传输层、7----金属对电极。
具体实施方式
实施例1:
以透明导电玻璃FTO作为第一电极(1);在第一电极(1)上制备一层10纳米厚度的氧化锌薄膜致密层(2);接着制备0.5微米厚度的氧化锌纳米棒;利用旋涂法在纳米棒阵列上填充一层聚甲基丙烯酸甲酯(PMMA)作为阻挡层,接着用等离子体刻蚀去除纳米棒顶部的PMMA,露出0.1微米的纳米棒;利用连续离子层吸附反应法在露出的氧化物纳米棒(3)上制备PbS量子点层(5);去除剩余的PMMA;在上述样品上旋涂制备厚度为0.4微米的CH3NH3PbI3钙钛矿结构吸光层(4);在上述获得的样品表面制作0.2微米厚的Spiro-OMeTAD空穴传输层(6);利用真空热蒸镀或电子束蒸镀在空穴传输层(6)表面蒸镀一层厚度为50纳米的金对电极(7)。
实施例2:
以透明导电玻璃ITO作为第一电极(1);在第一电极(1)上制备一层100纳米厚度的氧化钛薄膜致密层(2);接着制备1.5微米厚度的氧化钛纳米棒;利用旋涂法在纳米棒阵列上填充一层聚甲基丙烯酸甲酯(PMMA)作为阻挡层,接着用等离子体刻蚀去除纳米棒顶部的PMMA,露出0.5微米的纳米棒;利用连续离子层吸附反应法在露出的氧化物纳米棒(3)上制备PbSe量子点层(5);去除剩余的PMMA;在上述样品上旋涂制备厚度为1微米的钙钛矿结构吸光层(4);在上述获得的样品表面制作1微米厚的Spiro-OMeTAD空穴传输层(6);利用真空热蒸镀或电子束蒸镀在空穴传输层(6)表面蒸镀一层厚度为100纳米的铂对电极(7)。
实施例3:
以透明导电玻璃FTO作为第一电极(1);在第一电极(1)上制备一层80纳米厚度的氧化钛薄膜致密层(2);接着制备3微米厚度的氧化锌纳米棒;利用旋涂法在纳米棒阵列上填充一层聚甲基丙烯酸甲酯(PMMA)作为阻挡层,接着用等离子体刻蚀去除纳米棒顶部的PMMA,露出1.5微米的纳米棒;利用连续离子层吸附反应法在露出的氧化物纳米棒(3)上制备PbS量子点层(5);去除剩余的PMMA;在上述样品上旋涂制备厚度为1.5微米的钙钛矿结构吸光层(4);在上述获得的样品表面制作1微米厚的3,4-乙撑二氧噻吩:聚苯乙烯磺酸盐(PEDOT:PSS)空穴传输层(6);利用真空热蒸镀或电子束蒸镀在空穴传输层(6)表面蒸镀一层厚度为80纳米的金对电极(7)。
实施例4:
以透明导电玻璃ITO作为第一电极(1);在第一电极(1)上制备一层50纳米厚度的氧化钛薄膜致密层(2);接着制备2微米厚度的氧化锌纳米棒;利用旋涂法在纳米棒阵列上填充一层聚甲基丙烯酸甲酯(PMMA)作为阻挡层,接着用等离子体刻蚀去除纳米棒顶部的PMMA,露出1.5微米的纳米棒;利用连续离子层吸附反应法在露出的氧化物纳米棒(3)上制备PbSe量子点层(5);去除剩余的PMMA;在上述样品上旋涂制备厚度为1.5微米的钙钛矿结构吸光层(4);在上述获得的样品表面制作2微米厚的Spiro-OMeTAD空穴传输层(6);利用真空热蒸镀或电子束蒸镀在空穴传输层(6)表面蒸镀一层厚度为80纳米的银对电极(7)。
Claims (2)
1.一种钙钛矿-量子点双吸收层太阳能电池,其特征在于,它由透明电极(1)、致密层(2)、氧化物纳米棒(3)、钙钛矿结构吸光层(4)、量子点层(5)、空穴传输层(6)和金属对电极(7)构成;
所述氧化物纳米棒是氧化锌或者氧化钛纳米棒;
所述的钙钛矿结构吸光层是指有机金属卤化物钙钛矿材料;
所述量子点是制备在纳米棒顶部的、具有红外光电转换特性的量子点。
2.一种钙钛矿-量子点双吸收层太阳能电池的制备方法,其特征在于具体制备步骤如下:
(a)在透明导电的电极(1)上制备10-100纳米厚的致密层(2);
(b)在步骤(a)获得的致密层基础上,利用水热法制备一层厚度为0.5-3微米长度的氧化物纳米棒(3);
(c)在上述制备得到的氧化物纳米棒(3)上,利用旋涂法在纳米棒阵列上填充一层聚甲基丙烯酸甲酯(PMMA)作为阻挡层,接着用等离子体刻蚀去除纳米棒顶部的PMMA,露出0.1-1.5微米的纳米棒;
(d)利用连续离子层吸附反应法在露出的氧化物纳米棒(3)上制备量子点层(5);
(e)去除剩余的PMMA;
(f)在步骤(e)样品上旋涂制备厚度为0.4-1.5微米的钙钛矿结构吸光层(4);
(g)在步骤(f)获得的样品表面制作厚度为0.2-2微米的空穴传输层(6);
(h)利用真空热蒸镀或电子束蒸镀在空穴传输层(6)表面蒸镀一层厚度为50~100纳米的金属对电极(7);
所述氧化物纳米棒是氧化锌或者氧化钛纳米棒/线;
所述-钙钛矿结构吸光层是指有机金属卤化物钙钛矿材料;
所述量子点是制备在纳米棒顶部的、具有红外光吸收特性的量子点。
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