CN105068169A - Infrared filter, manufacturing method therefor, and camera module group - Google Patents
Infrared filter, manufacturing method therefor, and camera module group Download PDFInfo
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- CN105068169A CN105068169A CN201510510504.2A CN201510510504A CN105068169A CN 105068169 A CN105068169 A CN 105068169A CN 201510510504 A CN201510510504 A CN 201510510504A CN 105068169 A CN105068169 A CN 105068169A
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- infrared fileter
- photoresistance glue
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- described infrared
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Abstract
The invention provides a manufacturing method for an infrared filter, and the method is characterized in that the method comprises the steps: coating an infrared filter substrate with photoresist which is negative black photoresist; baking the photoresist on the infrared filter substrate; employing a preset photomask to expose the photoresist on the infrared filter substrate; carrying out the developing of the photoresist on the infrared filter substrate, and forming a light-resisting pattern; and obtaining the infrared filter. Because the photetching technology is very high in precision, a precise optical pattern can be formed. Moreover, the light-resisting pattern formed at the precision cannot form remarkable edge burr, thereby enabling the edge of the light-resisting pattern to be smooth, achieving the better absorption of stray light, and enabling the optical effect of a device to be better.
Description
Technical field
The application relates to optical element, particularly a kind of infrared fileter and preparation method thereof, camera module.
Background technology
Along with the development of multimedia technology, digital vedio recording is by people's widespread use, and have the electronic installation of digital camera function as digital camera, cell-phone camera is first-class, realizes the object of photologging mainly through integrated camera module in an electronic.
General, as shown in Figure 1, camera module comprises camera lens 101, motor 102, infrared fileter 103, sensor devices 104 and PCB 105.During shooting, light arrives sensor devices by camera lens, motor, infrared fileter successively, by affecting the state of charge of sensor devices, forms electronic image.
But, as shown in Figure 2, due to device configuration reason, have part veiling glare and enter sensor devices (light in dotted line frame), thus affect image quality.In order to address this problem, usually can certain resistance light pattern be set on infrared fileter 103, veiling glare be carried out reflecting or absorbing, to avoid veiling glare to enter sensor devices, affects the optical effect of device.
In prior art, on infrared fileter, form resistance light pattern by serigraphy.But due to screen printing technique dimensional accuracy lower (tolerance is ± 0.03mm), the pattern of formation is coarse, and pattern edge burr is obvious, thus can not reflect completely or absorb veiling glare, and device optical effect needs to be improved further.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of infrared fileter and preparation method thereof, the method precision is high, and the resistance light pattern obtained is accurate, and edge is round and smooth, improves the optical effect of device.
Technical scheme is as follows:
A method for making for infrared fileter, comprising: on infrared fileter substrate, apply photoresistance glue, and described photoresistance glue is negativity black photoresistance glue; Toast the on-chip photoresistance glue of described infrared fileter; Adopt and preset photomask board, expose the on-chip photoresistance glue of described infrared fileter; The on-chip photoresistance glue of described infrared fileter is developed, forms resistance light pattern; Obtain infrared fileter.
Preferably, described on infrared fileter substrate, apply photoresistance glue before, also comprise: cleaning infrared fileter substrate.
Preferably, the thickness that described infrared fileter substrate applies photoresistance glue is 0.5 μm ~ 10 μm, comprises endpoint value.
Preferably, the energy of the on-chip photoresistance glue of the described infrared fileter of described exposure is 70mj ~ 300mj, comprises endpoint value.
Preferably, the thickness that described infrared fileter substrate applies photoresistance glue is 1 μm ~ 2 μm, comprises endpoint value.
Preferably, the energy of the on-chip photoresistance glue of the described infrared fileter of described exposure is 80mj ~ 150mj, comprises endpoint value.
Preferably, described the on-chip photoresistance glue of described infrared fileter to be developed, comprising: infrared fileter substrate described in vacuum suction; Described infrared fileter substrate is rotated under preset rotation speed; To described infrared fileter on-chip photoresistance glue spray developing liquid, develop described photoresistance glue; Jet douche liquid rinses the on-chip developer solution of described infrared fileter; Described infrared fileter substrate is dried under preset rotation speed.
Preferably, after described formation resistance light pattern, before obtaining described infrared fileter, also comprise: toast described infrared fileter.
A kind of infrared fileter, adopts the infrared fileter that the method in claim 1 ~ 8 described in arbitrary claim makes.
A kind of camera module, described camera module is provided with infrared fileter according to claim 9.
Compared with prior art, beneficial effect of the present invention is:
The present invention directly adopts negativity black photoresistance glue to carry out photoetching making resistance light pattern, owing to adopting black photoresistance glue, effectively can absorb veiling glare.Because photoetching technique precision is high, can reach about 0.1 μm, thus can form accurate optical design.Further, the resistance light pattern formed under this precision, can not form obvious burrs on edges, thus makes this resistance light pattern the smooth of the edge, better can absorb veiling glare, make the optical effect of device better.
Further, adopt photoetching technique can by resistance light pattern THICKNESS CONTROL at 0.5 μm ~ 10 μm, more excellent, by resistance light pattern THICKNESS CONTROL at 1 μm ~ 2 μm, under the prerequisite meeting product optical property, advantageously can assemble in following process.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present application, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of prior art camera module;
Fig. 2 is camera module veiling glare light path schematic diagram;
Fig. 3 is the process flow diagram of the method for making that the embodiment of the present invention one provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present application, be clearly and completely described the technical scheme in the embodiment of the present application, obviously, described embodiment is only some embodiments of the present application, instead of whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the application's protection.
As stated in the Background Art, due to screen printing technique dimensional accuracy lower (tolerance is ± 0.03mm), the pattern of formation is coarse, and pattern edge burr is obvious, thus can not stop veiling glare completely, and device optical effect needs to be improved further.
In view of this, the present invention proposes a kind of method for making of infrared fileter, it is characterized in that, comprising: on infrared fileter substrate, apply photoresistance glue, and described photoresistance glue is negativity black photoresistance glue; Toast the on-chip photoresistance glue of described infrared fileter; Adopt and preset photomask board, expose the on-chip photoresistance glue of described infrared fileter; The on-chip photoresistance glue of described infrared fileter is developed, forms resistance light pattern; Obtain infrared fileter.
The present invention directly adopts negativity black photoresistance glue to carry out photoetching making resistance light pattern, owing to adopting black photoresistance glue, effectively can absorb veiling glare.And photoetching technique precision is high, can reaches about 0.1 μm, thus can form accurate optical design.Further, the resistance light pattern formed under this precision, can not form obvious burrs on edges, thus makes this resistance light pattern the smooth of the edge, better can absorb veiling glare, make the optical effect of device better.
Further, adopt photoetching technique can by resistance light pattern THICKNESS CONTROL at 0.5 μm ~ 10 μm, more excellent, by resistance light pattern THICKNESS CONTROL at 1 μm ~ 2 μm, under the prerequisite meeting product optical property, advantageously can assemble in following process.
It is more than central idea of the present invention, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment one
The present embodiment provides a kind of method for making of infrared fileter, and as shown in Figure 3, concrete steps are as follows:
Step S110: clean described infrared fileter substrate.
Concrete, in this step, described infrared fileter substrate can be the monolithic of the infrared fileter substrate after scribing, also can be the combination of the multiple infrared fileter substrates without scribing.
In this step, utilize corresponding cleaning technique, infrared fileter substrate surface is cleaned up.Concrete, basic lotion, deionized water can be adopted successively, clean, the impurity, greasy dirt etc. of described infrared fileter substrate surface be removed clean.In other embodiments of the application, other modes also can be used to clean.
Step S120: apply photoresistance glue on described infrared fileter substrate, described photoresistance glue is negativity black photoresistance glue.
In this step, the mode of described coating negativity black photoresistance glue can be spin coating, concrete, comprises the steps:
Step S121: described infrared fileter substrate is adsorbed on vacuum cup;
Step S122: drip negativity black photoresistance glue on described infrared fileter substrate;
Step S123: adopt preset rotation speed to rotate described infrared fileter substrate, described negativity black photoresistance glue is evenly covered with on the surface of described infrared fileter substrate.
In the step s 120, the thickness of the photoresistance glue of coating is relevant to preset rotation speed, and preset rotation speed is higher, and the thickness obtained is less, and preset rotation speed is lower, and the thickness obtained is larger.Determine corresponding preset rotation speed, the photoresistance glue of preset thickness can be obtained.
In the present embodiment, the thickness that described infrared fileter substrate applies negativity black photoresistance glue is 0.5 μm ~ 10 μm, comprises endpoint value, more excellent, and the thickness of described negativity black photoresistance glue is 1 μm ~ 5 μm, comprises endpoint value.In other embodiments of the application, the thickness of described negativity black photoresistance glue can also be 1 μm ~ 2 μm, comprises endpoint value, thus under the prerequisite meeting product optical property, advantageously assembles in following process.
In other embodiments of the application, the mode of described coating photoresist can also be blade coating, and concrete steps are prior art, do not repeat them here.
Adopt negativity black photoresistance glue to carry out photoetching making resistance light pattern, owing to adopting black photoresistance glue, extinction is effective, thus can make the device optical better effects if that finally obtains.
Step S130: toast the on-chip photoresistance glue of described infrared fileter.
Concrete, in this step, by simply toasting the most of solvent evaporation in photoresistance glue, can not stick on mask plate when following process.Concrete, different according to the thickness of photoresistance glue, at baking temperature is 120 DEG C, the time of baking can between 1 ~ 5min.The thickness of photoresistance glue is larger, needs the time of baking longer.
Step S140: adopt and preset photomask board, expose the on-chip photoresistance glue of described infrared fileter.
Concrete, above the coated face mask of corresponding figure being placed on infrared fileter substrate, use exposure machine to carry out ultraviolet exposure, exposure energy is different and change according to the thickness of photoresist.Photoresistance glue is thicker, and the exposure energy that exposure needs is larger.
Concrete, the thickness of negativity black photoresistance glue is 0.5 μm ~ 10 μm, and the energy exposing the on-chip photoresistance glue of described infrared fileter is 70mj ~ 300mj, comprises endpoint value.Corresponding, when the thickness of described negativity black photoresistance glue is 1 μm ~ 5 μm, the energy exposing the on-chip photoresistance glue of described infrared fileter is 80mj ~ 150mj.In other embodiments of the application, when the thickness of described negativity black photoresistance glue is 1 μm ~ 2 μm, comprise endpoint value, corresponding exposure energy is 80mj ~ 90mj.
Step S150: develop to the on-chip photoresistance glue of described infrared fileter, forms resistance light pattern.
Concrete, in this step, by developer solution, the on-chip photoresistance glue of described infrared fileter is developed, form the corresponding resistance light pattern presetting photomask board.
Owing to using minus photoresistance glue in the present invention, the photoresistance glue that light does not shine part can be dissolved by the developing, and light shines the photoresistance glue of part due to the change of molecular structure, becomes and is not dissolved in developer solution, thus forms resistance light pattern.Therefore, the mask plate in the present invention is light transmission part in resistance light pattern part, and other parts are lightproof part.
Step S160: obtain infrared fileter.
Concrete, in this step, if described infrared fileter substrate is the monolithic of the infrared fileter substrate after scribing, then can obtain infrared fileter after step s 150, if and described infrared fileter substrate is the combination of the multiple infrared fileter substrates without scribing, then need to carry out scribing, the combination of described multiple infrared fileter substrate is divided into the infrared fileter of monolithic, thus obtains infrared fileter.
In the present embodiment, directly adopt negativity black photoresistance glue to carry out photoetching making resistance light pattern, owing to adopting black photoresistance glue, effectively can absorb veiling glare.And photoetching technique precision is high, can reaches about 0.1 μm, thus can form accurate optical design.Further, the resistance light pattern formed under this precision, can not form obvious burrs on edges, thus makes this resistance light pattern the smooth of the edge, better can absorb veiling glare, make the optical effect of device better.
Further, adopt photoetching technique can by resistance light pattern THICKNESS CONTROL at 0.5 μm ~ 10 μm, more excellent, by resistance light pattern THICKNESS CONTROL at 1 μm ~ 2 μm, under the prerequisite meeting product optical property, advantageously can assemble in following process.
Embodiment two
The present embodiment provides a kind of method for making of infrared fileter on the basis of embodiment one, and wherein, different from embodiment one, the step S150 in the present embodiment comprises the steps:
Step S151: infrared fileter substrate described in vacuum suction;
Step S152: rotate described infrared fileter substrate under preset rotation speed;
Step S153: to described infrared fileter on-chip photoresistance glue spray developing liquid, develop described photoresistance glue;
Step S154: jet douche liquid rinses the on-chip developer solution of described infrared fileter;
Step S155: dry described infrared fileter substrate under preset rotation speed.
In step, adopt above-mentioned visualization way, can lines be obtained straight, there is no the precise pattern of burr, thus enable this resistance light pattern better absorb veiling glare, make the optical effect of device better.
Further, in the present embodiment, after step S150, can also comprise the steps: before step 160
Step S200: toast described infrared fileter.
Concrete, be placed in dustless baking oven by the described infrared fileter substrate after development and toast, after high-temperature baking, photoresistance glue just remains in the surface of infrared fileter substrate.The ability that such photoresistance glue has anti-highly basic, strong acid to corrode after baking, thus the resistance light pattern that described photoresistance glue is formed is more solid and reliable.
In the present embodiment, directly adopt negativity black photoresistance glue to carry out photoetching making resistance light pattern, owing to adopting black photoresistance glue, effectively can absorb veiling glare.Further, because photoetching technique precision is high, can reach about 0.1 μm, thus can form accurate optical design.Further, the resistance light pattern formed under this precision, can not form obvious burrs on edges, thus makes this resistance light pattern the smooth of the edge, better can absorb veiling glare, make the optical effect of device better.
Further, adopt photoetching technique can by resistance light pattern THICKNESS CONTROL at 0.5 μm ~ 10 μm, more excellent, by resistance light pattern THICKNESS CONTROL at 1 μm ~ 2 μm, under the prerequisite meeting product optical property, advantageously can assemble in following process.
Embodiment three
With above-described embodiment unlike, present embodiments provide a kind of infrared fileter, described infrared fileter adopt the method in above-described embodiment make obtain.
In the present embodiment, infrared fileter has the resistance light pattern directly adopting negativity black photoresistance glue to carry out photoetching making.Owing to adopting black photoresistance glue, owing to adopting black photoresistance glue, effectively veiling glare can be absorbed.Because photoetching technique precision is high, can reach about 0.1 μm, thus can form accurate optical design.Further, the resistance light pattern formed under this precision, can not form obvious burrs on edges, thus makes this resistance light pattern the smooth of the edge, better can absorb veiling glare, make the optical effect of device better.
Further, adopt photoetching technique can by resistance light pattern THICKNESS CONTROL at 0.5 μm ~ 10 μm, more excellent, by resistance light pattern THICKNESS CONTROL at 1 μm ~ 2 μm, under the prerequisite meeting product optical property, advantageously can assemble in following process.
Embodiment four
With above-described embodiment unlike, present embodiments provide a kind of camera module, described camera module be provided with the infrared fileter described in embodiment three.
In the present embodiment, infrared fileter has the resistance light pattern directly adopting negativity black photoresistance glue to carry out photoetching making.Owing to adopting black photoresistance glue, effectively veiling glare can be absorbed.Because photoetching technique precision is high, can reach about 0.1 μm, thus can form accurate optical design.Further, the resistance light pattern formed under this precision, can not form obvious burrs on edges, thus makes this resistance light pattern the smooth of the edge, better can absorb veiling glare, make the optical effect of device better.
Further, adopt photoetching technique can by resistance light pattern THICKNESS CONTROL at 0.5 μm ~ 10 μm, more excellent, by resistance light pattern THICKNESS CONTROL at 1 μm ~ 2 μm, under the prerequisite meeting product optical property, advantageously can assemble in following process.
It should be noted that, each embodiment in this instructions all adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar part mutually see.For device class embodiment, due to itself and embodiment of the method basic simlarity, so description is fairly simple, relevant part illustrates see the part of embodiment of the method.
Finally, also it should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operational zone, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
Be described in detail technical scheme above, apply specific case herein and set forth the principle of the application and embodiment, the explanation of above embodiment is just for helping method and the core concept thereof of understanding the application; Meanwhile, for one of ordinary skill in the art, according to the thought of the application, all will change in specific embodiments and applications, in sum, this description should not be construed as the restriction to the application.
Claims (10)
1. a method for making for infrared fileter, is characterized in that, comprising:
Infrared fileter substrate applies photoresistance glue, and described photoresistance glue is negativity black photoresistance glue;
Toast the on-chip photoresistance glue of described infrared fileter;
Adopt and preset photomask board, expose the on-chip photoresistance glue of described infrared fileter;
The on-chip photoresistance glue of described infrared fileter is developed, forms resistance light pattern;
Obtain infrared fileter.
2. method according to claim 1, is characterized in that, described on infrared fileter substrate, apply photoresistance glue before, also comprise:
Cleaning infrared fileter substrate.
3. method according to claim 1, is characterized in that, the thickness that described infrared fileter substrate applies photoresistance glue is 0.5 μm ~ 10 μm, comprises endpoint value.
4. method according to claim 3, is characterized in that, the energy of the on-chip photoresistance glue of the described infrared fileter of described exposure is 70mj ~ 300mj, comprises endpoint value.
5. method according to claim 1, is characterized in that, the thickness that described infrared fileter substrate applies photoresistance glue is 1 μm ~ 2 μm, comprises endpoint value.
6. method according to claim 5, is characterized in that, the energy of the on-chip photoresistance glue of the described infrared fileter of described exposure is 80mj ~ 150mj, comprises endpoint value.
7. method according to claim 1, is characterized in that, describedly develops to the on-chip photoresistance glue of described infrared fileter, comprising:
Infrared fileter substrate described in vacuum suction;
Described infrared fileter substrate is rotated under preset rotation speed;
To described infrared fileter on-chip photoresistance glue spray developing liquid, develop described photoresistance glue;
Jet douche liquid rinses the on-chip developer solution of described infrared fileter;
Described infrared fileter substrate is dried under preset rotation speed.
8. method according to claim 1, is characterized in that, after described formation resistance light pattern, before obtaining described infrared fileter, also comprises:
Toast described infrared fileter.
9. an infrared fileter, is characterized in that, adopts the infrared fileter that the method in claim 1 ~ 8 described in arbitrary claim makes.
10. a camera module, is characterized in that, described camera module is provided with infrared fileter according to claim 9.
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| CN201510510504.2A CN105068169A (en) | 2015-08-19 | 2015-08-19 | Infrared filter, manufacturing method therefor, and camera module group |
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| CN201510510504.2A CN105068169A (en) | 2015-08-19 | 2015-08-19 | Infrared filter, manufacturing method therefor, and camera module group |
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| CN107315214A (en) * | 2017-08-03 | 2017-11-03 | 上海兆九光电技术有限公司 | Optical filter box and its manufacture method |
| CN109959995A (en) * | 2017-12-14 | 2019-07-02 | 惠州海格光学技术有限公司 | Novel filter cradle fits process |
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