CN105068166B - A kind of preparation method of high linear density multiplayer films in EUV balzed grating, - Google Patents
A kind of preparation method of high linear density multiplayer films in EUV balzed grating, Download PDFInfo
- Publication number
- CN105068166B CN105068166B CN201510275299.6A CN201510275299A CN105068166B CN 105068166 B CN105068166 B CN 105068166B CN 201510275299 A CN201510275299 A CN 201510275299A CN 105068166 B CN105068166 B CN 105068166B
- Authority
- CN
- China
- Prior art keywords
- euv
- films
- preparation
- balzed grating
- linear density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 54
- 230000000737 periodic effect Effects 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 30
- 230000012010 growth Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000005036 potential barrier Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 238000001953 recrystallisation Methods 0.000 claims description 3
- 230000004313 glare Effects 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 238000005457 optimization Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910015372 FeAl Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 101150112014 Gapdh gene Proteins 0.000 description 1
- 229910017623 MgSi2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000003963 x-ray microscopy Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0198—Manufacture or treatment of microstructural devices or systems in or on a substrate for making a masking layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The preparation method of the high linear density multiplayer films in EUV balzed grating, of the present invention, including step：First, there is provided a substrate, the surface of the substrate is radiated using low energy ion beam, form zigzag nanostructured periodic array；Then in the superficial growth periodic multilayer film of the zigzag nanostructured periodic array, multiplayer films in EUV balzed grating, is formed.The present invention, which prepares multiplayer films in EUV balzed grating, only needs two steps, enormously simplify the complicated technology of traditional preparation methods.In addition, using the preparation method of the present invention, the moire grids density of balzed grating, will be greatly increased, so as to which the diffraction efficiency of multiplayer films in EUV balzed grating, and spectral resolution be significantly increased.
Description
Technical field
It is more more particularly to a kind of high linear density extreme ultraviolet the present invention relates to semiconductor and optics Micrometer-Nanometer Processing Technology field
The preparation method of tunic balzed grating,.
Background technology
Extreme ultraviolet waveband refers to one section of electromagnetic spectrum medium wavelength from 5nm to 40nm.A large amount of atoms in this wave band be present to be total to
Shake Absorption Line, and radiation of the substantially any material to extreme ultraviolet waveband all has serious absorption.Therefore, extreme ultraviolet optics is in 20 generation
Record the seventies before development it is very slow.Since nearly 40 years, the appearance of multi-layer mirror makes this case be improved.
People using multi-layer mirror realize extreme ultraviolet astronomy, soft X ray microscopy, extreme ultra-violet lithography, X ray etc. from
The applications such as son diagnosis.However, the spectral resolution (λ/Δ λ) of multi-layer mirror is relatively low.Needing fine resolution optic spectrum line
Or the occasion of narrow-band spectrum filtering is carried out, multi-layer mirror is just difficult to satisfaction and require that.For grinding in high spectral resolution
It is applied in studying carefully, multilayer film and grating set are formed the artificial periodic structure of two dimension by people.This composite construction has height concurrently
The advantage of reflectivity and high spectral resolution, the development of extreme ultraviolet astronomical observation and spectral instrument preparation is greatly facilitated.
At present, prepare the method major mechanical scribing of multiplayer films in EUV balzed grating, ion beam etching, wet etching with
And the mode such as electron-beam direct writing.These preparation methods are all extremely complex, and the moire grids density of preparation is also very limited, has reported at present
The highest line density of multiplayer films in EUV balzed grating, is 10000 lines/mm.In order to improve spreading out for multiplayer films in EUV balzed grating,
Efficiency and spectral resolution are penetrated, develops a kind of preparation side for the new multiplayer films in EUV balzed grating, that can improve moire grids density
Method is with regard to particularly important.
The present invention can form height using low energy ion irradiation semiconductor (GaAs, InAs) surface in semiconductor surface
Regular zigzag nanostructured periodic array, about 20000 lines/mm, finally by accurate control multilayer film growth, realize multilayer
The preparation of film balzed grating,.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of high linear density extreme ultraviolet multilayer
The preparation method of film balzed grating, for solving the diffraction efficiency of multiplayer films in EUV balzed grating, in the prior art and spectrum point
The problem of resolution is low, the moire grids density of grating is low.
In order to achieve the above objects and other related objects, the present invention provides a kind of high linear density multiplayer films in EUV and glared
The preparation method of grid, the preparation method comprise at least：
One substrate is provided, the surface of the substrate is radiated using low energy ion beam, forms zigzag nanostructured cycle battle array
Row；
In the superficial growth periodic multilayer film of the zigzag nanostructured periodic array, form multiplayer films in EUV and dodge
Credit grating.
It is described as a kind of scheme of optimization of the preparation method of high linear density multiplayer films in EUV balzed grating, of the present invention
Substrate is the monocrystal material that is made up of at least two chemical elements.
As a kind of scheme of optimization of the preparation method of high linear density multiplayer films in EUV balzed grating, of the present invention, use
Low energy ion beam is positive to irradiate the substrate surface, the ion beam spoke of the whole surface to be constructed of the substrate by the same terms
According to.
It is described as a kind of scheme of optimization of the preparation method of high linear density multiplayer films in EUV balzed grating, of the present invention
Ion kinetic energy caused by ion beam is between 50eV to 100keV.
As a kind of scheme of optimization of the preparation method of high linear density multiplayer films in EUV balzed grating, of the present invention, nanometer
During preparing ion irradiation, the substrate is that self-heating is imitated as a direct contact heater and/or as caused by ion beam current
It should be heated
It is described as a kind of scheme of optimization of the preparation method of high linear density multiplayer films in EUV balzed grating, of the present invention
The temperature that substrate heats during ion irradiation will at least reach the recrystallization temperature of material.
It is described as a kind of scheme of optimization of the preparation method of high linear density multiplayer films in EUV balzed grating, of the present invention
Heating-up temperature of the substrate during ion irradiation is up to the Ehrlich-Schwoebel potential barriers failure to material surface step
Temperature.
As a kind of scheme of optimization of the preparation method of high linear density multiplayer films in EUV balzed grating, the periodicity
Multilayer film is formed by least two layers different film layer by being periodically alternately stacked.
As a kind of scheme of optimization of the preparation method of high linear density multiplayer films in EUV balzed grating, the periodicity
Multilayer film is formed by two layers of different film layer by being periodically alternately stacked.
As a kind of scheme of optimization of the preparation method of high linear density multiplayer films in EUV balzed grating, the periodicity
Film layer is made up of Mo/Si films.
As a kind of scheme of optimization of the preparation method of high linear density multiplayer films in EUV balzed grating, of the present invention, formed
During the Mo/Si films, Mo films are first plated, then plate Si films, the thickness of the Mo films is less than the thickness of Si films.
As described above, the preparation method of the high linear density multiplayer films in EUV balzed grating, of the present invention, including step：It is first
First, there is provided a substrate, the surface of the substrate is radiated using low energy ion beam, form zigzag nanostructured periodic array；So
Afterwards in the superficial growth periodic multilayer film of the zigzag blazed grating structure, multiplayer films in EUV balzed grating, is formed.This
Invention, which prepares multiplayer films in EUV balzed grating, only needs two steps, enormously simplify the complicated technology of traditional preparation methods.In addition,
Using the preparation method of the present invention, the moire grids density of balzed grating, will be greatly increased, so as to which extreme ultraviolet multilayer be significantly increased
The diffraction efficiency and spectral resolution of film balzed grating,.
Brief description of the drawings
Fig. 1 is the preparation method flow chart of high linear density multiplayer films in EUV balzed grating, of the present invention.
Fig. 2 be high linear density multiplayer films in EUV balzed grating, of the present invention preparation method in low energy ion radiation supporting base table
The structural representation in face.
Fig. 3 is the periodic multilayer film formed in the preparation method of high linear density multiplayer films in EUV balzed grating, of the present invention
Structural representation.
Fig. 4 be high linear density multiplayer films in EUV balzed grating, of the present invention preparation method in low energy ion irradiation GaAs lining
Basal surface forms the SEM photograph of height rule zigzag nanostructured periodic array.
Fig. 5 be high linear density multiplayer films in EUV balzed grating, of the present invention preparation method in low energy ion irradiation GaAs lining
Basal surface forms the TEM cross-section photographs of height rule zigzag nanostructured periodic array.
Fig. 6 is the TEM enlarged photographs of single laciniation in Fig. 5.
Component label instructions
S1~S2 steps
1 substrate
2 periodic multilayer films
21 Mo films
22 Si films
3 ion beams
4 zigzag nanostructured periodic arrays
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to accompanying drawing.It should be noted that only explanation is of the invention in a schematic way for the diagram provided in the present embodiment
Basic conception, then in schema only display with relevant component in the present invention rather than according to component count during actual implement, shape
Shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its component cloth
Office's kenel may also be increasingly complex.
Embodiment one
The present invention provides a kind of preparation method of high linear density multiplayer films in EUV balzed grating, as shown in figure 1, the system
Preparation Method comprises at least following steps：
Step S1 is first carried out, refers to accompanying drawing 2, there is provided a substrate 1, the substrate 1 is radiated using low energy ion beam 3
Surface, form zigzag nanostructured periodic array 4.
The substrate 1 is the monocrystal material being made up of at least two chemical elements, i.e., by two or more chemical analysis groups
Into stoichiometric proportion material.According to an embodiment, material prepared by nanometer is compound semiconductor materials, particularly
III-V compound semiconductor material such as GaAs, InAs, GaSb.Meanwhile material prepared by nanometer can also be II-VI group half
Conductor material, for example, the compound that ZnSe, CdTe, HgS are either made up of two kinds of column IV elements in chemical periodic table, for example,
SiC or SiGe.In addition, the backing material for carrying out nanometer preparation can also be intermetallic compound (such as GaPd, FeAl, MgSi2)
And oxide is (for example, TiO2, ZnO).
The present invention uses the surface of Low Energy Ion-beam Irradiation substrate 1, and the ion beam 3 can positive your table of vertical irradiation survey
Face, other adjustable incident angles can also be used.In the present embodiment, the positive radiation supporting base surface of ion beam 3.
Ion gun of the energy range in 10~100000eV uniform ion beams 3 can be produced by needing one.Especially with gas
Body ion gun, including He+, Ne+, Ar+, Kr+, Xe+Inert gas, or other gas sources, such as N+, O+Deng gas ion.Ion splashes
Penetrating needs vacuum condition, for example, being completed in the cavity of a vacuum, its pressure is 10-3Below mbar, ion energy is in 50eV
Between~10keV.The beam current density and ion-flow rate density of ion beam are 0~1017cm-2s-1Between, preferably 1014cm-2s-1
To 1017cm-2s-1Between.Ion dose is 1016cm-2and 1020cm-2Between.Ion radiation time depends on specific technique
Condition, typically between 10 minutes to 200 minutes.
In order that the surface of substrate 1 is irradiated by the same terms, ion beam 3 can use heavy in section wide beam, the spoke of ion beam 3
According to when, the whole area for needing to prepare zigzag nanostructured periodic array 4 of its size covering so can by step irradiation
To form the zigzag nano graph array of structures 4 of large area.
In addition, when the invention prepares zigzag nanometer periodic array 4 on the surface of single crystalline substrate 1, substrate 1 will be heated, together
When ion irradiation sputtering heating single crystalline substrate 1, realize the preparation of surface zigzag nanostructured periodic array 4.
Heating for various substrates material, individually can be heated by a direct contact heater or individually by from
Self-heating effect caused by beamlet stream is heated, reaching the optimal bar that monocrystalline, regular nano-array are prepared in the present invention
Part.
And for some backing materials that the present embodiment enumerates, such as InAs, GaAs, although during ion irradiation,
Material surface is because the input of ion energy can generate heat, however, extra heating is also needed to during nano patterning, to reach nanometer
The optimum condition of patterned preparation.Particularly, the crystal defect caused by ion can be entered under the conditions of certain temperature
The effective annealing of row.In addition, increasing the heat input of sample surfaces by increasing ion beam current, it can generally also increase the crystalline substance of crystal
Lattice defect, this is by the crystal mass of nanostructured prepared by influence.It is therefore possible to use the volume that ion beam self-heating effect is unrelated
External heat source such as heating plate, is heated to the sample of nano patterning, and monocrystalline, regular nano-array are prepared in the present invention to reach
Optimum condition.
Material surface prepared by nanometer is in material surface towards ion beam normal incidence.According to case study on implementation, knot is prepared
During structure, material to be constructed is heated from the back side.For example, we can be with one with material layer back contact to be constructed element
(such as hot plate) is heated as heater element.
Under normal circumstances, the sufficiently high surface for making irradiation of the energy of the intermediate ion of ion beam 3 produces a large amount of defects or causes table
Face is decrystallized, but in the present invention, and when ion irradiation, which sputters, to carry out, the substrate surface of irradiation also needs to be heated to sufficiently high
Temperature, such substrate surface can produce defect, such as Frenkel defects, room and interstitial atom, and room caused by surface can be with
It is diffused, and redistributes the empty structure for being gathered into reaction crystal symmetry.Shadow of the diffusion constant of surface vacancy by temperature
Ring, raised with the rise of temperature.Diffusion according to this embodiment room is completed on exposed material surface, prepared
The single crystal characteristics and rule degree of zigzag nanostructured periodic array 4 are all greatly improved, the zigzag nanostructured of preparation
With complete single crystal characteristics.
The material of substrate 1 is heated in ion irradiation process, and temperature will at least reach more than the recrystallization temperature of material in itself,
Maximum temperature is no more than the Ehrlich-Schwoebel potential barrier invalid temperatures of material, so can effectively anneal and repair ion
Irradiation is material surface introduces the defects of.For room or atom plane of crystal diffusion, at the edge of plane of crystal step
In the presence of a constraint atom or the barrier of room diffusion, this is commonly known as Ehrlich-Schwoebel potential barriers (also referred to as ES gesture
Build), wherein Ehrlich-Schwoebel barrier energies EESIt is activation temperature T to deserved temperatureESMeet equation EES=kTES(k is
Boltzmann constant).Therefore, when structuring temperature is in highest, the heat energy of the atom in material is just equal at this temperature
Ehrlich-Schwoebel barrier energies.If temperature is higher than this value, the Ehrlich-Schwoebel potential barriers in material will
Failure, atom or room will extend over potential barrier, uniformly diffusion.
The zigzag nanostructured periodic array 4 can be symmetrical structure or unsymmetric structure.Different crystalline substances
To surface prepare different zigzag fashions, if for example, the surface of substrate 1 be zincblende lattce structure crystal (100) face, (100) face
Under the irradiation of the normal incidence of ion beam 2, symmetrical laciniation will be produced.That is, the zigzag nanostructured both sides table formed
There is identical angle in face with (100) face.If the preceding surface of irradiating surface either layer to be constructed is a flat surface, and
(100) surface of itself and zincblende lattce structure crystal has mis-cut angle, in this case during ion beam irradiation beveled surface, especially
When being vertical incidence, resulting zigzag nanostructured periodic array 4 will not be symmetrical.
Then step S2 is performed, refers to accompanying drawing 3, in the superficial growth week of the zigzag nanostructured periodic array 4
Phase property multilayer film 2, form multiplayer films in EUV balzed grating,.
The method for preparing the multilayer film 2 can be the common process such as electron beam evaporation, sputtering or thermal evaporation, herein no longer
Repeat.The periodic multilayer film 2 is by least two layers different film layer by being periodically alternatively formed.It is if for example, periodically more
Tunic is made up of two kinds of film layers of A, B 21,22, then multilayer film 2 can be A, B, A, B, A, B ... periodic stacks structure；If multilayer
Film is made up of tri- kinds of film layers of A, B, C, then multilayer film can be A, B, C, A, B, C, A, B, C ... periodic stacks structure, successively class
Push away.
Because the optical constant (refractive index, absorption coefficient etc.) of different-waveband material is different, to expect some wave band most
Excellent optical characteristics selects the multilayer material for being adapted to the wave band, it is necessary to according to the optical constant and material property of material.Typically,
In one alternate cycle of the multilayer film, the less coating growth of atomic number in the larger film layer of atomic number, and
The thickness of the larger film layer of atomic number is less than the thickness of the less film layer of atomic number.To make film layer absorption coefficient minimum, one
As, the larger thicknesses of layers of atomic number accounts for cycle ratio as 0.3~0.5.For example, if the atomic number of B film layers is less than A film layers
Atomic number, then the surface of the zigzag nanostructured periodic array grow successively from bottom to top film layer A, film layer B, film layer A,
In several cycles such as film layer B, multilayer film is formed, and the thickness of A film layers is less than the thickness of B film layers.And the monofilm grown
Thickness controlled by the technological parameter in concrete technology, such as sedimentation rate, sedimentation time etc..
The Bragg equation that the thickness of each monofilm is met by the reflectivity peak of multilayer film in the multilayer film 2 is Lai really
Determine, it is necessary to which the Bragg condition met is：2n*Dcos θ *=λ, wherein n* are the mean refractive index of material in a cycle；D is
The thickness of a cycle in multilayer film；θ *=θ-β, θ are angle of light, i.e. extreme ultraviolet incident light and substrate plane normal direction
Angle；β is blaze angle, i.e. β is the side wall of zigzag nanostructured periodic array and the angle of horizontal plane.It should be noted that
The position angle that β is indicated in Fig. 3 is substantially equal with blaze angle size.As long as the it should also be noted that, material class of multilayer film
Type determines that mean refractive index n* is determination value, in addition, extreme ultraviolet wavelength X is determination value, blaze angle β is also determination value.Cause
This, in order to calculate the thickness D of a cycle in multilayer film, it is necessary to first determine extreme ultraviolet incident angle θ in Bragg equation.
The glittering condition of balzed grating, is：Sin (θ -2 β)=sin θ+m λ/d, wherein θ is extreme ultraviolet incidence angle, and β is sudden strain of a muscle
Credit angle, λ are lambda1-wavelength, and m is level, and d is the cycle of zigzag nanostructured periodic array 4.It can be counted by the condition
Calculate incident angle of light θ.Angle of light degree θ is determined, a cycle in multilayer film can be determined further according to Bragg equation
Thickness D.
Embodiment two
The present invention is by following by corresponding case study on implementation, and refer to the attached drawing, and the height of the present invention is expanded on further
The preparation method of line density multiplayer films in EUV balzed grating,.
Step 1: providing a substrate GaAs to be irradiated, energy is used as 1keV, beam current density 1015cm-2s-1, dosage
For 1019cm-2Ar+Ion beam positive irradiation GaAs (001) surface at 410 DEG C.
Fig. 4 illustrates the electron scanning micrograph after GaAs (001) surfaces are irradiated at 410 DEG C, Fig. 5 and
Fig. 6 illustrates the transmission electron microscope photo after GaAs (001) surfaces are irradiated at 410 DEG C, wherein, Fig. 6 is Fig. 5
In single broached-tooth design enlarged photograph.From figs. 5 and 6, it can be seen that GaAs surfaces generate the zigzag nanostructured cycle
Array, the cycle of zigzag nanostructured periodic array is 46nm.Laciniation is can be seen that from single laciniation
Two sides form identical angle with (001) surface, and the face width of two sides is equal.The angle is blaze angle β, size
For 14.7 °.
Step 2: in GaAs (001) the superficial growth multilayer film 2 irradiated, the preparation of multilayer film balzed grating, is completed.
In the present embodiment, in the Mo/Si multilayer films that GaAs (001) superficial growths are alternately stacked by Mo films 21 and Si films 22.
It is known to treat that incident extreme ultraviolet wavelength X is 13.6nm, diffraction time m=-1, glittered condition by balzed grating, it is final determine it is extremely purple
Outer angle of light θ is 69 °；It can determine that the periodic thickness D of multilayer film is 13.491nm by Bragg equation afterwards.
Therefore, in this step, it is in the zigzag nanostructured periodic array superficial growth cycle by coating process
13.491nm Mo/Si multilayer films, because Mo atomic number is more than Si atomic number, therefore, Mo films are first plated in the design
21, then Si films 22 are plated, so alternately, and the thickness of Mo films 21 is less than the thickness of Si films 22.In the present embodiment, the thickness of Mo films 21
Degree is designed as 0.4D, and Si films 22 are designed as 0.6D, i.e. the thickness of Mo films 21 is 13.491*0.4=5.4nm, the thickness of Si films 22
For 13.491*0.6=8.1nm.
It should be noted that general, the periodicity of multilayer film 2 is more, and its reflectivity is higher, still, in actual process,
When multilayer film 2, which makes, reaches certain thickness, the top layer of multilayer film 2 will have the trend of planarization, and therefore, selection is suitable
Periodicity is also critically important.In the present embodiment, 20 Mo/Si multilayer films 2 are grown altogether.In order to illustrate conveniently, only shown in Fig. 3
Two cycles alternate Mo/Si multilayer films 2.
Finally, emulated, obtained when the extreme ultraviolet that wavelength is 13.6nm is in off-normal according to strict ripple coupled method
During 69 ° of direction incidence multilayer film balzed grating, manufactured in the present embodiment, -1 order diffraction efficiency reaches 43.6%.
In summary, the present invention provides a kind of preparation method of high linear density multiplayer films in EUV balzed grating, including step
Suddenly：First, there is provided a substrate, the surface of the substrate is radiated using low energy ion beam, form zigzag nanostructured cycle battle array
Row；Then in the superficial growth periodic multilayer film of the zigzag blazed grating structure, form multiplayer films in EUV and glare
Grid.The present invention, which prepares multiplayer films in EUV balzed grating, only needs two steps, enormously simplify the complicated technology of traditional preparation methods.
In addition, using the preparation method of the present invention, the moire grids density of balzed grating, will be greatly increased, so as to which extreme ultraviolet be significantly increased
The diffraction efficiency and spectral resolution of multilayer film balzed grating,.
So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of preparation method of high linear density multiplayer films in EUV balzed grating, it is characterised in that the preparation method is at least
Including：
One substrate is provided, the surface of the substrate is radiated using low energy ion beam, while the substrate is heated, heating
Temperature will at least reach the recrystallization temperature of backing material, and maximum temperature is no more than the Ehrlich-Schwoebel gesture of material
Invalid temperature is built, forms zigzag nanostructured periodic array；
In the superficial growth periodic multilayer film of the zigzag nanostructured periodic array, form multiplayer films in EUV and glare
Grid.
2. the preparation method of high linear density multiplayer films in EUV balzed grating, according to claim 1, it is characterised in that：Institute
It is monocrystal material to state substrate.
3. the preparation method of high linear density multiplayer films in EUV balzed grating, according to claim 1, it is characterised in that：Adopt
The substrate surface is irradiated with low energy ion beam is positive, the ion beam of the whole surface to be constructed of the substrate by the same terms
Irradiation.
4. the preparation method of high linear density multiplayer films in EUV balzed grating, according to claim 1, it is characterised in that：Institute
Ion kinetic energy caused by ion beam is stated between 50eV to 100keV.
5. the preparation method of high linear density multiplayer films in EUV balzed grating, according to claim 1, it is characterised in that：Receive
During the metric system is for ion irradiation, the substrate is as a direct contact heater and/or the self-heating as caused by ion beam current
Effect is heated.
6. the preparation method of high linear density multiplayer films in EUV balzed grating, according to claim 5, it is characterised in that：Institute
It is up to the Ehrlich-Schwoebel potential barriers mistake to material surface step to state heating-up temperature of the substrate during ion irradiation
Imitate temperature.
7. the preparation method of high linear density multiplayer films in EUV balzed grating, according to claim 1, it is characterised in that：Institute
Periodic multilayer film is stated to be formed by being periodically alternately stacked by least two layers different film layer.
8. the preparation method of high linear density multiplayer films in EUV balzed grating, according to claim 7, it is characterised in that：Institute
Periodic multilayer film is stated to be formed by being periodically alternately stacked by two layers of different film layer.
9. the preparation method of high linear density multiplayer films in EUV balzed grating, according to claim 8, it is characterised in that：Institute
Periodicity film layer is stated to be made up of Mo/Si films.
10. the preparation method of high linear density multiplayer films in EUV balzed grating, according to claim 9, it is characterised in that：
When forming the Mo/Si films, Mo films are first plated, then plate Si films, the thickness of the Mo films is less than the thickness of Si films.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014107458.0A DE102014107458B4 (en) | 2014-05-27 | 2014-05-27 | patterning methods |
| DE102014107458.0 | 2014-05-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105068166A CN105068166A (en) | 2015-11-18 |
| CN105068166B true CN105068166B (en) | 2017-12-29 |
Family
ID=54298653
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510275200.2A Active CN104986722B (en) | 2014-05-27 | 2015-05-26 | A kind of nano patterning method |
| CN201510275299.6A Active CN105068166B (en) | 2014-05-27 | 2015-05-26 | A kind of preparation method of high linear density multiplayer films in EUV balzed grating, |
| CN201510274630.2A Active CN104986728B (en) | 2014-05-27 | 2015-05-26 | A kind of preparation method of large-area nano array |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510275200.2A Active CN104986722B (en) | 2014-05-27 | 2015-05-26 | A kind of nano patterning method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510274630.2A Active CN104986728B (en) | 2014-05-27 | 2015-05-26 | A kind of preparation method of large-area nano array |
Country Status (2)
| Country | Link |
|---|---|
| CN (3) | CN104986722B (en) |
| DE (1) | DE102014107458B4 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106338882B (en) * | 2015-12-21 | 2019-11-05 | 中国科学院长春光学精密机械与物理研究所 | A kind of multiplayer films in EUV and preparation method thereof |
| CN106094084A (en) * | 2016-06-02 | 2016-11-09 | 中国科学院微电子研究所 | Multiplayer films in EUV reflective single diffraction order grating |
| CN106597588B (en) * | 2016-12-20 | 2019-10-18 | 中国科学院微电子研究所 | A kind of transmission grating |
| CN108288512A (en) * | 2017-12-06 | 2018-07-17 | 上海交通大学 | Vertical broached-tooth design refraction of X-ray lens |
| CN108766883B (en) * | 2018-06-13 | 2020-10-27 | 中国科学技术大学 | Ion bombardment preparation method of self-organizing nano structure with sawtooth profile |
| CN110632687B (en) * | 2018-06-22 | 2021-07-27 | 中国科学院上海微系统与信息技术研究所 | Metamaterial crystal structure capable of regulating and controlling electromagnetic wave absorption and preparation method thereof |
| CN110333564B (en) * | 2019-03-15 | 2021-07-02 | 中山大学 | Van der Waals excimer material micro-nano structure prepared based on focused ion beam etching and preparation method thereof |
| CN110146947B (en) * | 2019-05-22 | 2020-07-21 | 复旦大学 | Blazed grating with fabry-perot cavity and method for manufacturing the same |
| CN110244514B (en) * | 2019-07-01 | 2021-10-19 | 中国科学技术大学 | Photoresist with surface having nano-pore structure and preparation method thereof |
| CN113253373B (en) * | 2021-04-02 | 2022-05-31 | 艾普偏光科技(厦门)有限公司 | Glasses lens with flashing grating technology visible light color changing |
| CN113720795B (en) * | 2021-09-03 | 2024-03-01 | 上海科技大学 | High flux extreme ultraviolet multi-layer film grating spectrometer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102230179A (en) * | 2011-06-22 | 2011-11-02 | 清华大学 | Method for preparing metal nano stripes |
| CN102866445A (en) * | 2012-10-15 | 2013-01-09 | 上海理工大学 | Design method of grating with glaring concave surface |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4906594A (en) * | 1987-06-12 | 1990-03-06 | Agency Of Industrial Science And Technology | Surface smoothing method and method of forming SOI substrate using the surface smoothing method |
| JPH10133008A (en) * | 1996-11-01 | 1998-05-22 | Japan Aviation Electron Ind Ltd | Multilayered diffraction grating and its production |
| DE19932880A1 (en) | 1998-09-23 | 2000-03-30 | Stefan Facsko | Process for the production of nanometer structures on semiconductor surfaces |
| US7459839B2 (en) * | 2003-12-05 | 2008-12-02 | Zhidan Li Tolt | Low voltage electron source with self aligned gate apertures, and luminous display using the electron source |
| CN100423245C (en) * | 2005-12-07 | 2008-10-01 | 中国科学院物理研究所 | Metal silicide nano-wire and its making method |
| JP2008090030A (en) * | 2006-10-03 | 2008-04-17 | Japan Atomic Energy Agency | High-efficiency heat-resistant multilayer diffraction grating |
| CN100477308C (en) * | 2007-05-10 | 2009-04-08 | 复旦大学 | A making method for the diameter-adjustable silicon quanta line array |
| DE102009046756A1 (en) * | 2008-11-18 | 2010-05-20 | Amo Gmbh | Method for manufacturing regular nano-structures on solid body surface for computers, involves bringing relief structure on solid body surface before execution of illumination, where structure exhibits dimensions within submicrometer range |
| CN101565164B (en) * | 2009-05-31 | 2011-05-11 | 北京石油化工学院 | Method and equipment for controlling growth of quantum dots |
| CN102653414B (en) * | 2011-03-04 | 2013-10-09 | 中国科学院金属研究所 | Nano crystal grain tin dioxide electron beam preparation method |
| CN103663354B (en) * | 2012-09-11 | 2016-07-20 | 北京大学 | Micro/nano array and the application in micro/nano material standard bending strain loads thereof |
| CN102877035B (en) * | 2012-10-08 | 2014-10-15 | 云南大学 | Method for preparing silicon-based germanium film with low-temperature buffer layer by means of cyclic stress modulation |
| CN103787270A (en) * | 2014-01-27 | 2014-05-14 | 中国科学院物理研究所 | Method for processing graphene superlattice nano-structure with atomic force microscope |
-
2014
- 2014-05-27 DE DE102014107458.0A patent/DE102014107458B4/en active Active
-
2015
- 2015-05-26 CN CN201510275200.2A patent/CN104986722B/en active Active
- 2015-05-26 CN CN201510275299.6A patent/CN105068166B/en active Active
- 2015-05-26 CN CN201510274630.2A patent/CN104986728B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102230179A (en) * | 2011-06-22 | 2011-11-02 | 清华大学 | Method for preparing metal nano stripes |
| CN102866445A (en) * | 2012-10-15 | 2013-01-09 | 上海理工大学 | Design method of grating with glaring concave surface |
Non-Patent Citations (1)
| Title |
|---|
| Control of surface mobility for conformal deposition of Mo-Si multilayers on saw-tooth substrates;D.L.Voronov et al;《Applied Surface Science》;20131231;第575-580页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104986728A (en) | 2015-10-21 |
| DE102014107458A1 (en) | 2015-12-03 |
| CN104986728B (en) | 2017-03-15 |
| CN105068166A (en) | 2015-11-18 |
| CN104986722B (en) | 2017-06-06 |
| DE102014107458B4 (en) | 2020-02-13 |
| CN104986722A (en) | 2015-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105068166B (en) | A kind of preparation method of high linear density multiplayer films in EUV balzed grating, | |
| Kumar et al. | Effect of swift heavy ion on structural and optical properties of undoped and doped nanocrystalline zinc oxide films | |
| Lim et al. | Fabrication and characterization of EUV multilayer mirrors optimized for small spectral reflection bandwidth | |
| Shyam et al. | Irradiation induced modification of structural and optical properties of potassium sodium niobate thin films | |
| CN112885499A (en) | Kinoform medium lens for synchrotron radiation soft X-ray focusing imaging and preparation method thereof | |
| Juneja et al. | Nanocrystalline silicon thin films and grating structures for solar cells | |
| Taha et al. | Textured concave anti-reflecting coating and convex back reflector to enhance the absorbance of amorphous Si solar cells | |
| Rahal et al. | Behavior study of the nanostructured zn1-xcdxo (0≤ x≤ 0.1) semiconductor thin films deposited onto silicon substrate by dip-coating method | |
| Stepanov et al. | Characterization of the surface of silver ion-implanted silicon by optical reflectance | |
| DE10240056B4 (en) | High temperature stable metal emitter and method of manufacture | |
| CN110143566A (en) | A kind of preparation method of three-D micro-nano origami structure | |
| Ribeiro et al. | Plasmonic Au nanoparticles by ion implantation | |
| CN110632687B (en) | Metamaterial crystal structure capable of regulating and controlling electromagnetic wave absorption and preparation method thereof | |
| Grigor’Ev et al. | Study of the structural and optical properties of thin polycrystalline zinc oxide films obtained by the ion-plasma method | |
| DE102013207751A1 (en) | Optical element with a multilayer coating and optical arrangement with it | |
| Abaskin et al. | Investigation of structural features of As 2 S 3–Se multilayer nanostructure by Raman spectroscopy | |
| JPS59193022A (en) | Heating of thin film | |
| RU2687889C1 (en) | Method for manufacturing phase periodic microstructures based on chalcogenide glassy semiconductors | |
| US20110169119A1 (en) | Methods to fabricate and improve stand-alone and integrated filters | |
| RU2805380C1 (en) | Method for manufacturing anti-reflection optical coating based on porous germanium | |
| Kim et al. | Reducing the optical reflectance of kerf-loss free silicon wafers via auto-masked CF4/O2 plasma etch | |
| Fan et al. | Process improvement of high aspect ratio nano-gratings based on synchrotron x-ray | |
| Fangsuwannarak | Electronic and optical characterisations of silicon quantum dots and its applications in solar cells | |
| Liang et al. | Preferential sputtering on multicomponent optical surfaces | |
| Stepanov et al. | PMMA LAYERS WITH ION-IMPLANTED SILVER NANOPARTICLES FOR DIFFRACTION GRATING SENSORS |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |