CN101565164B - Method and equipment for controlling growth of quantum dots - Google Patents
Method and equipment for controlling growth of quantum dots Download PDFInfo
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- CN101565164B CN101565164B CN2009100859531A CN200910085953A CN101565164B CN 101565164 B CN101565164 B CN 101565164B CN 2009100859531 A CN2009100859531 A CN 2009100859531A CN 200910085953 A CN200910085953 A CN 200910085953A CN 101565164 B CN101565164 B CN 101565164B
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Abstract
The embodiment of the invention provides a method and an equipment for controlling the growth of quantum dots, belonging to the field of quantum dot material preparation. The control method comprises the following steps of: arranging a substrate used for growing the quantum dots in a solution in which the quantum dot material is dissolved; arranging at least two lines of intersectant ultrasonic atthe same horizontal above the substrate so as to form an ultrasonic standing wave; leading the node column formed by the ultrasonic standing wave to point at the substrate; leading the quantum dot ma terial in the solution to deposit and grow the quantum dots on the substrate by the node columns formed by the ultrasonic standing wave; and adjusting the frequency or wavelength of the ultrasonic in the solution so as to adjust the growth position of the quantum dots on the substrate. The control method has the advantages of simple operation, realizing the controllable positioning growth of the quantum dot, having exact positioning, cheap equipment, and the like, is capable of preparing the material with the specified position growing the quantum dots and is capable of controlling the positions of the quantum dots growing on the substrate by controlling the wavelength and the frequency of the ultrasonic.
Description
Technical field
The present invention relates to the quanta point material preparation field, relate in particular to a kind of Quantum Dots Growth control method and control appliance.
Background technology
Electronics is confined in the structure of nanoscale, the size of three dimensions of formation is the structure below 100nm all, and outward appearance is called quantum dot just like a minimum point-like thing.In these structures, because the spatial domain of electronics is near the De Buluoyi wavelength, its matter wave characteristic sharply changes, and electricity and optical property and bulk material have qualitative difference.Quantum dot has very wide application prospect at aspects such as nonlinear optics, magnetizing mediums, biology, medicine and functional materials.
The quanta point material application prospect is very extensive, can be applied in the products such as large scale integrated circuit, electronic devices and components, flat-panel monitor, information record and storage, MEMS, sensor, solar cell.
When having the preparation quanta point material now, be to adopt the plane etching to prepare quanta point material (electron beam, ion beam and photoetching technique), strain self-organization grown quantum point technology and other chemistry and physical method technology of preparing, but because Quantum Dots Growth has randomness and the too small characteristics of volume, therefore, prior art all can't accurately be controlled the location of quantum dot when backing material is grown, existing processes can only be controlled at growth quantum point on the larger area substrate like this, and can't position control to the particular location of Quantum Dots Growth, the quanta point material that obtains after the preparation is from performance like this, aspects such as application all can't satisfy the requirement of some application-specific.
Summary of the invention
Based on above-mentioned existing in prior technology problem, the purpose of the embodiment of the invention provides a kind of Quantum Dots Growth control method and control appliance, can control the quantum dot of growing on the substrate, realize the located growth of quantum dot, obtain to satisfy the quanta point material that application-specific requires.
The objective of the invention is to be achieved through the following technical solutions:
Embodiment of the present invention provides a kind of Quantum Dots Growth control method, comprising:
The substrate that will be used for growth quantum point is arranged on the solution that is dissolved with quanta point material, and the ultrasonic wave formation ultrasonic wave standing wave that at least two row intersect is set in the same horizontal plane above described substrate, and the node post that the ultrasonic wave standing wave is formed points to described substrate;
Node post sedimentation growth quantum point on substrate that quanta point material in the solution is formed through the ultrasonic wave standing wave;
Adjust frequency or the wavelength of ultrasonic wave in solution and regulate the growth position of quantum dot on described substrate.
Described growth position comprises: the line-spacing between the quantum dot, row distance and density.
Described method also comprises:
Control the size that forms quantum dot on the substrate by control sedimentation time, underlayer temperature, the acidity of solution, viscosity, temperature.
Described method also comprises:
Form hyperacoustic columns of ultrasonic wave standing wave and the bottom shape that the crossing angle of ultrasonic wave is regulated growth quantum point on the substrate by control.
Described method further comprises: adopt two row ultrasonic waves and make two row ultrasonic waves be an angle of 90 degrees and intersect formation ultrasonic wave standing wave, under the effect of the node post that this ultrasonic wave standing wave forms, the growth bottom surface is the quantum dot of rectangle on substrate;
Adopt three row ultrasonic waves and make all to be the crossing ultrasonic wave standing wave that forms in 60 degree angles between the three row ultrasonic waves, under the effect of the node post that this ultrasonic wave standing wave forms, the growth bottom surface is hexagonal quantum dot on substrate.
Described method further comprises: adopt the multiple row ultrasonic wave and multiple row is intersected to form the ultrasonic wave standing wave, under the effect of the node post that this ultrasonic wave standing wave forms, the growth bottom surface is polygonal quantum dot on substrate.
Described frequency of ultrasonic scope is 10
5～10
12Hz.
The embodiment of the invention also provides a kind of Quantum Dots Growth control appliance, comprising:
Container, fine setting control device and at least two supersonic generators;
The container inner bottom part is provided with the locating slot of position substrate, the ultrasonic wave output branch of each supersonic generator is located at the sidewall of container, be equipped with reflecting plate on the container side wall relative with the ultrasonic wave output, each ultrasonic wave output is in same horizontal plane, and the ultrasonic wave of output intersects in the horizontal direction; The fine setting control device is connected with the substrate orientation groove with reflecting plate respectively, with the position of accommodation reflex plate and substrate.
The frequency of ultrasonic scope of described supersonic generator output is 10
5～10
12Hz.
Be connected to transducer on the described supersonic generator as the ultrasonic wave output, described transducer is formed by the material preparation of piezoelectric monocrystal crystal oscillator.
The technical scheme that is provided by the invention described above embodiment as can be seen, embodiment of the present invention is by being provided with the substrate of preparing growth quantum point in quanta point material solution, the node post that the ultrasonic wave standing wave that utilizes the substrate top to be provided with forms, point to the substrate of preparing growth quantum point, the quanta point material that makes sedimentation is under the effect of node post, growth quantum point on substrate is adjusted frequency of ultrasonic or wavelength, can realize controlling the position of growth quantum point on the substrate.The location controllable growth that this control method has is simple to operate, realized quantum dot, have characteristics such as accurate positioning, equipment cheapness, can prepare the material that quantum dot is arranged in the assigned address growth, by controlling hyperacoustic wavelength and frequency, the density that can control quantum dot is 10
10～10
12Individual/m
2, quantum dot distance is controlled at 1～0.0005mm, and the quantum dot controlled amount is at 10～50nm, the controlled one-tenth line of the bottom shape of quantum dot, rectangle quantum dot, polygon quantum dot etc., the application space of having widened quanta point material greatly.
Description of drawings
Fig. 1 is the structure vertical view of the quadrature stationary field control appliance of the embodiment of the invention;
Fig. 2 is the side cross-sectional schematic diagram of the control appliance of Fig. 1.
The specific embodiment
Embodiment of the present invention provides a kind of Quantum Dots Growth control method, this method specifically comprises: the substrate that will be used for growth quantum point is arranged on the solution that is dissolved with quanta point material, the ultrasonic wave formation ultrasonic wave standing wave that at least two row intersect is set in the same horizontal plane above substrate, and the node post that the ultrasonic wave standing wave is formed points to described substrate; Node post sedimentation growth quantum point on substrate that quanta point material in the solution is formed through the ultrasonic wave standing wave; Regulate the growth position of quantum dot on described substrate by adjusting the frequency or the wavelength of ultrasonic wave in solution.That this control method has is simple to operate, accurate positioning, can artificially assemble, characteristics such as quantum dot is evenly distributed, equipment cheapness, can reach and make quantum dot in suprabasil growth position and the controlled effect of shape, can prepare the material that quantum dot is arranged in the assigned address growth, the application space of having widened quanta point material greatly.
For ease of understanding, the invention will be further described below in conjunction with the drawings and specific embodiments.
Embodiment one
Present embodiment provides a kind of Quantum Dots Growth control method, comprising:
The substrate that will be used for growth quantum point is arranged on the solution that is dissolved with quanta point material, and the ultrasonic wave formation ultrasonic wave standing wave that at least two row intersect is set in the same horizontal plane above described substrate, and the node post that the ultrasonic wave standing wave is formed points to described substrate;
Node post sedimentation growth quantum point on substrate that quanta point material in the solution is formed through the ultrasonic wave standing wave;
Adjust frequency or the wavelength (promptly regulate spacing each node post of forming between) of ultrasonic wave in solution and regulate the growth position (comprise line-spacing, row distance and density quantum dot between) of quantum dot on described substrate.Wherein, frequency of ultrasonic scope adjustable extent is 10
5～10
12Hz.
In the above-mentioned control method, can also control the size that forms quantum dot on the substrate by control sedimentation time, underlayer temperature, the acidity of solution, viscosity, temperature.
In the above-mentioned control method, also can form hyperacoustic columns of ultrasonic wave standing wave and the bottom shape that the crossing angle of ultrasonic wave is regulated growth quantum point on the substrate by control.
The growth bottom surface is the quantum dot of rectangle on substrate as preparing, can adopt two row ultrasonic waves and make two row ultrasonic waves be an angle of 90 degrees and intersect formation ultrasonic wave standing wave, under the effect of the node post that this ultrasonic wave standing wave forms, can on substrate, grow the quantum dot of bottom surface rectangle;
The growth bottom surface is hexagonal quantum dot on substrate as preparing, can adopt three row ultrasonic waves and make and all be the crossing ultrasonic wave standing wave that forms in 60 degree angles between the three row ultrasonic waves, under the effect of the node post that this ultrasonic wave standing wave forms, promptly the growth bottom surface is hexagonal quantum dot on substrate.
The growth bottom surface is polygonal quantum dot on substrate if prepare, can adopt the multiple row ultrasonic wave and multiple row is intersected and form the ultrasonic wave standing wave, angle between the multiple row ultrasonic wave can be adjusted as required, shape by the polygon quantum dot is decided, under the effect of the node post that this ultrasonic wave standing wave forms, promptly the growth bottom surface is polygonal quantum dot on substrate.
Can know, shape according to the quantum dot bottom surface of preparing to grow, can adopt the ultrasonic wave of different columns and intersect to form the ultrasonic wave standing wave, utilize the effect of the node post of this ultrasonic wave standing wave formation, can on substrate, grow the satisfactory quantum dot of bottom shape.
In the above-mentioned control method, adjust the crossing node face of ultrasonic wave standing wave and form node post to a bit, the synthetic sedimentation of application response makes the generation macromolecular particle be deposited in along the node post and grows into quantum dot on the substrate, in infall process, control sedimentation time and underlayer temperature, the acidity of solution, viscosity, form the size of quantum dot in control such as the temperature substrate, frequency or the wavelength position of regulating quantum dot of control ultrasonic wave in solution, line-spacing and row distance and density, the bottom shape that the columns of control ultrasonic wave standing wave and the angle between the Ge Lie ultrasonic wave are regulated quantum dot is as linear, rectangle and polygon etc.
As shown in Figure 1, 2, also provide a kind of Quantum Dots Growth control appliance that utilizes above-mentioned control method in the present embodiment, this equipment specifically comprises:
The frequency of ultrasonic scope of two supersonic generator outputs is 10
5～10
12Hz; All be connected to transducer on each supersonic generator as the ultrasonic wave output, transducer adopts the material preparation of piezoelectric monocrystal crystal oscillator to form.
Adopt silicon chip with substrate below, it is example that quanta point material adopts cadmium sulfide, and the invention will be further described to utilizing above-mentioned control appliance to adopt above-mentioned control method to locate the process that generates quantum dot.
As shown in Figure 1, 2, the selection silicon chip is a backing material, and cadmium sulfide is a quanta point material, and the frequency of first, second supersonic generator is 10
7-8About Hz, transducer is a piezoelectric monocrystal crystal oscillator material (lithium niobate monocrystal), in container, place two supersonic generators of quadrature two ripples, the distance of adjusting reflecting plate and transducer makes and produces stationary field therebetween, produce vertically uniform node post in the stationary field in container, when the solution of Containing Sulfur cadmium quanta point material synthesizes precipitation in stationary field, the synthetic material particle concentrates on node post precipitation, be deposited in the bottom surface on the substrate of horizontal positioned, form uniform quantum dot, the ultrasonic frequency of adjusting supersonic generator output can change the distance between quantum dot and the size of quantum dot.The standing wave system that two supersonic generators of horizontal quadrature are formed can prepare the quantum dot of rectangular bottom surface, is that the standing wave system that the supersonic generators of 60 degree form can prepare the quantum dot of hexagon bottom surface if adopt three horizontal positioned angles.
The size of quantum dot and supersonic frequency, sedimentation time are relevant, and quantum dot is the adhesive force of substrate relevant with growth conditions (as long as copying the condition of precipitation thin films).The shape of quantum dot is controlled by the angle of stationary field.
In sum, in the embodiment of the invention, form the ultrasonic wave standing wave system by utilizing supersonic generator, control the growth of quantum dot by ultrasonic wave standing wave system and sedimentation time, it is low to have simple to operate, accurate positioning, good stability, cost, the characteristics of being convenient to produce in batches, and utilize this control method artificially assembling quantum dot and the control quantum dot that evenly distributes, can prepare material, widen the application space of quanta point material greatly at the assigned address growth quantum point.
The above; only for the preferable specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (10)
1. a Quantum Dots Growth control method is characterized in that, comprising:
The substrate that will be used for growth quantum point is arranged on the solution that is dissolved with quanta point material, and the ultrasonic wave formation ultrasonic wave standing wave that at least two row intersect is set in the same horizontal plane above described substrate, and the node post that the ultrasonic wave standing wave is formed points to described substrate;
Node post sedimentation growth quantum point on substrate that quanta point material in the solution is formed through the ultrasonic wave standing wave;
Adjust frequency or the wavelength of ultrasonic wave in solution and regulate the growth position of quantum dot on described substrate.
2. Quantum Dots Growth control method according to claim 1 is characterized in that, described growth position comprises: the line-spacing between the quantum dot, row distance and density.
3. Quantum Dots Growth control method according to claim 1 is characterized in that, described method also comprises:
Control the size that forms quantum dot on the substrate by control sedimentation time, underlayer temperature, the acidity of solution, viscosity, temperature.
4. Quantum Dots Growth control method according to claim 1 is characterized in that, described method also comprises: form hyperacoustic columns of ultrasonic wave standing wave and the bottom shape that the crossing angle of ultrasonic wave is regulated growth quantum point on the substrate by control.
5. Quantum Dots Growth control method according to claim 4, it is characterized in that, described method further comprises: adopt two row ultrasonic waves and make two row ultrasonic waves be an angle of 90 degrees and intersect formation ultrasonic wave standing wave, under the effect of the node post that this ultrasonic wave standing wave forms, the growth bottom surface is the quantum dot of rectangle on substrate;
Adopt three row ultrasonic waves and make all to be the crossing ultrasonic wave standing wave that forms in 60 degree angles between the three row ultrasonic waves, under the effect of the node post that this ultrasonic wave standing wave forms, the growth bottom surface is hexagonal quantum dot on substrate.
6. Quantum Dots Growth control method according to claim 4, it is characterized in that, described method further comprises: adopt the multiple row ultrasonic wave and multiple row is intersected to form the ultrasonic wave standing wave, under the effect of the node post that this ultrasonic wave standing wave forms, the growth bottom surface is polygonal quantum dot on substrate.
7. according to each described Quantum Dots Growth control method of claim 1-6, it is characterized in that described frequency of ultrasonic scope is 10
5～10
12Hz.
8. a Quantum Dots Growth control appliance is characterized in that, comprising:
Container, fine setting control device and at least two supersonic generators;
The container inner bottom part is provided with the locating slot of position substrate, the ultrasonic wave output branch of each supersonic generator is located at the sidewall of container, be equipped with reflecting plate on the container side wall relative with the ultrasonic wave output, each ultrasonic wave output is in same horizontal plane, and the ultrasonic wave of output intersects in the horizontal direction; The fine setting control device is connected with the substrate orientation groove with reflecting plate respectively, with the position of accommodation reflex plate and substrate.
9. Quantum Dots Growth control appliance according to claim 8 is characterized in that, the frequency of ultrasonic scope of described supersonic generator output is 10
5～10
12Hz.
10. Quantum Dots Growth control appliance according to claim 8 is characterized in that, is connected to transducer on the described supersonic generator as the ultrasonic wave output, and described transducer is formed by the material preparation of piezoelectric monocrystal crystal oscillator.
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| CN102491262A (en) * | 2011-12-15 | 2012-06-13 | 北京石油化工学院 | Controllable preparation method for nanowire array parallel to substrate |
| CN102442637A (en) * | 2011-12-15 | 2012-05-09 | 北京石油化工学院 | Preparation method of nanowire array perpendicular to substrate |
| CN102773493B (en) * | 2012-08-24 | 2014-02-26 | 哈尔滨工业大学 | Device and method for preparing metal microballoons by using ultrasonic surface standing waves |
| DE102014107458B4 (en) * | 2014-05-27 | 2020-02-13 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | patterning methods |
| CN108153109A (en) * | 2017-12-29 | 2018-06-12 | 深圳市华星光电技术有限公司 | The preparation method of photoetching agent pattern |
| CN110246755A (en) * | 2019-06-25 | 2019-09-17 | 广东工业大学 | The array of Micro-LED substrate arranges transfer method, transfer device, display device |
| CN117960431B (en) * | 2024-03-28 | 2024-06-25 | 北京交通大学 | Ultrasonic control device and method for liquid jet |
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