CN105049000A - Optional-pulse-width narrow pulse generator - Google Patents
Optional-pulse-width narrow pulse generator Download PDFInfo
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- CN105049000A CN105049000A CN201510522311.9A CN201510522311A CN105049000A CN 105049000 A CN105049000 A CN 105049000A CN 201510522311 A CN201510522311 A CN 201510522311A CN 105049000 A CN105049000 A CN 105049000A
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- pulse
- circuit
- electric capacity
- resistance
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Abstract
The invention discloses an optional-pulse-width narrow pulse generator, which comprises an avalanche transistor pulse generating circuit, an adjustable pulse drive circuit and an optional-pulse-width circuit, wherein the avalanche transistor pulse generating circuit is used for generating pulse signals; the adjustable pulse drive circuit is serially connected into a base electrode loop of the avalanche transistor pulse generating circuit, and is used for triggering the avalanche transistor pulse generating circuit and controlling the conduction of the avalanche transistor pulse generating circuit; the input end of the optional-pulse-width circuit is connected with the output end of the avalanche transistor pulse generating circuit; and the optional-pulse-width circuit is used for shaping pulses generated by the avalanche transistor pulse generating circuit and selecting the pulse width according to requirements. The optional-pulse-width narrow pulse generator has the advantages that the pulse width can be selected according to requirements, so that the avalanche transistor pulse generating circuit can be flexibly applied to various occasions.
Description
Technical field
The present invention relates to pulse generator technical field, be specifically related to the selectable burst pulse generator of a kind of pulsewidth.
Background technology
Pulse generator is a device often used at electronics and communication field, and it is mainly for generation of required pulse signal.Pulse generator is as shown in Figure 1 the most typical pulse generator used at present.Above-mentioned pulse generator, in order to produce pulse, snowslide pipe T
1enter critical avalanche condition, when direct voltage source VCC applies voltage to certain amplitude, snowslide pipe T
1namely avalanche condition is entered, as driving source V
tby the first electric capacity C
1, the first resistance R
1when differential circuit produces direct impulse, snowslide pipe T
1enter avalanche breakdown state instantaneously, the second electric capacity C
2electric discharge, at load R
lupper generation negative-going pulse.But the pulse duration produced is by the second resistance R
2, the second electric capacity C
2value joint effect, immutable, the needs of multiple application can not be met.Pulse duration, once fixing, unadjustable, limits pulse generator flexibility in actual applications.
Summary of the invention
Technical problem to be solved by this invention be the pulse duration of existing pulse generator once fixing just uncontrollable deficiency, provide a kind of pulsewidth selectable burst pulse generator.
For solving the problem, the present invention is achieved by the following technical solutions:
The selectable burst pulse generator of a kind of pulsewidth, comprise burst pulse generator body, described burst pulse generator body comprises circuit adjustable pulse drive circuit and avalanche transistor pulses generation; The input termination driving source V of adjustable pulse drive circuit
t, the output of adjustable pulse drive circuit is connected with the input of avalanche transistor pulses generation; Its difference is, the output of avalanche transistor pulses generation is connected to one and can selects pulse width circuit;
It is described that to select pulse width circuit to comprise more than 2 groups or 2 groups structures identical and mutually in the microstrip line branch road be connected in parallel; Often organize microstrip line branch road and comprise electric capacity C
5, PIN diode P
1, short-circuit micro-band line TL
1, resistance R
5with relay switch SW
1; Electric capacity C
5one end be divided into two-way, a road is formed can select the input of pulse width circuit, is connected with the output of avalanche transistor pulse-generating circuit, and the formation of another road can select the output of pulse width circuit, i.e. the output of burst pulse generator body; Electric capacity C
5the other end connect PIN diode P
1anode, PIN diode P
1negative electrode through short-circuit micro-band line TL
1rear ground connection GND; Resistance R
5one end connect PIN diode P
1anode, resistance R
5the other end through relay switch SW
1or be directly connected with bias voltage Vdd; Often organize the short-circuit micro-band line TL of microstrip line branch road
1length all not identical.
In such scheme, described adjustable pulse drive circuit comprises bipolar transistor T
2, electric capacity C
1, C
2, resistance R
1with potentiometer R
2; Electric capacity C
1one end, resistance R
1one end and potentiometer R
2one end be connected, and form the input of adjustable pulse drive circuit, i.e. the input of burst pulse generator body, with driving source V
tconnect; Potentiometer R
2the other end connect electric capacity C
2one end and bipolar transistor T
2base stage; Electric capacity C
2the other end and bipolar transistor T
2the equal ground connection GND of emitter; Electric capacity C
1the other end and resistance R
1the other end and bipolar transistor T
2collector electrode be connected, and form the output of adjustable pulse drive circuit, be connected with the input of avalanche transistor pulse-generating circuit.
In such scheme, described avalanche transistor pulse-generating circuit comprises bipolar transistor T
1, resistance R
c, R
4, R
lwith electric capacity C
4, C
3; Electric capacity C
3one end form the input of avalanche transistor pulse-generating circuit, be connected with the output of adjustable pulse drive circuit; Electric capacity C
3the other end and bipolar transistor T
1base stage and resistance R
4one end be connected; Bipolar transistor T
1collector electrode be divided into two-way, a road is through resistance R
cbe connected with power supply VCC, another road meets electric capacity C
4one end; Electric capacity C
4the other end and resistance R
lone end be connected, and form the output on avalanche transistor pulse electrogenesis road, be connected with the input of pulse width circuit can be selected; Bipolar transistor T
1emitter, resistance R
4the other end and resistance R
lother end ground connection GND.
In such scheme, described resistance R
cit is a potentiometer.
In such scheme, described bias voltage Vdd is variable bias voltage or fixed bias voltage.
Compared with prior art, the present invention can strobe pulse width according to demand, so make avalanche transistor pulse generator be applied in various occasion more flexibly.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of existing pulse generator.
Fig. 2 is the circuit theory diagrams of the selectable burst pulse generator of pulsewidth.
Embodiment
Below in conjunction with drawings and Examples to content further instruction of the present invention, but it not limitation of the invention.
The selectable burst pulse generator of a kind of pulsewidth, as shown in Figure 2, comprises avalanche transistor pulse-generating circuit, adjustable pulse drive circuit and can select pulse width circuit.Avalanche transistor pulse-generating circuit, for generation of pulse signal.In the base loop of adjustable pulse drive circuit serial access avalanche transistor pulse-generating circuit, for triggering avalanche triode pulse-generating circuit, control its conducting.The input of pulse width circuit can be selected to connect with the output of avalanche transistor pulse-generating circuit, for carrying out shaping to the pulse produced, and the width of strobe pulse according to demand.
Described adjustable pulse drive circuit comprises bipolar transistor T
2, electric capacity C
1, C
2, resistance R
1with potentiometer R
2.Electric capacity C
1with resistance R
1parallel connection, and form accelerating circuit.Bipolar transistor T
2, electric capacity C
2with potentiometer R
2composition timing circuit.One end of accelerating circuit and potentiometer R
2one end connect, the other end and bipolar transistor T
2collector electrode be connected.Potentiometer R
2the other end connect electric capacity C
2one end and bipolar transistor T
2base stage.Electric capacity C
2the other end and bipolar transistor T
2the equal ground connection GND of emitter.Bipolar transistor T
2collector electrode form the output of adjustable pulse drive circuit, and to be connected with the input of avalanche transistor pulse-generating circuit.The driving source V of whole burst pulse generator
tconnect electric capacity C
1, resistance R
1with potentiometer R
2connected end.
Described avalanche transistor pulse-generating circuit comprises bipolar transistor T
1, electric capacity C
3, C
4, potentiometer R
cwith resistance R
4, R
l.Electric capacity C
3input form the input of avalanche transistor pulse-generating circuit, electric capacity C
3output termination bipolar transistor T
1base stage.Bipolar transistor T
1collector electrode be divided into two-way, a road is through potentiometer R
cbe connected with power supply VCC, another road meets electric capacity C
4input.Bipolar transistor T
1grounded emitter GND.Resistance R
4one end connect electric capacity C
3output, other end ground connection GND.Resistance R
lone end connect electric capacity C
4output, other end ground connection GND.Electric capacity C
4output form the output of avalanche transistor pulse-generating circuit.
Described pulse width circuit of selecting comprises the identical microstrip line branch road of more than 2 groups or 2 groups structures, all microstrip line branch roads are in being connected in parallel on the output of adjustable pulse drive circuit, but the length wherein often organizing the short-circuit micro-band line of microstrip line branch road is different, and carry out control selection by outside.The group number of microstrip line branch road determines the quantity of exportable pulse duration, one group of microstrip line branch road then only has a kind of pulse duration of generation, two groups of microstrip line branch roads then only have generation two kinds of pulse durations, the like, the pulse duration that the length of different micro-band then produces is different.Strobe pulse width as required, thus determine corresponding short-circuit micro-band line length.Often organize microstrip line branch road and comprise electric capacity C
5, PIN diode P
1, short-circuit micro-band line TL
1with resistance R
5.Electric capacity C
5one end be divided into two-way, a road is formed can select the input of pulse width circuit, and is connected with the output of avalanche transistor pulse-generating circuit, and the formation of another road can select the output of pulse width circuit, i.e. the output of whole burst pulse generator.Electric capacity C
5the other end connect PIN diode P
1anode, PIN diode P
1negative electrode through short-circuit micro-band line TL
1rear ground connection GND.Resistance R
5one end connect PIN diode P
1anode, resistance R
5the other end form the control end of this microstrip line branch road.Two kinds are had to the mode that the keying of every bar microstrip line branch road controls:
A kind of mode is, by resistance R
5the other end directly connect the mode of variable bias voltage Vdd.Now, the low and high level output of the bias voltage Vdd of every bar microstrip line branch road need be controlled by a single-chip microcomputer.When the bias voltage Vdd of a Single-chip Controlling microstrip line branch road is high level, PIN diode P
1conducting, this microstrip line branch road conducting; Otherwise, when the bias voltage Vdd of a Single-chip Controlling microstrip line branch road is low level, PIN diode P
1cut-off, this microstrip line branch road disconnects.
A kind of mode is, by resistance R
5the other end by relay switch SW
1be connected and fixed the mode of bias voltage Vdd.Now, the bias voltage Vdd of every bar microstrip line branch road is set to high level, relay switch SW
1opening and closing controlled by artificial or chip microcontroller.As relay switch SW
1time closed, PIN diode P
1conducting, this microstrip line branch road conducting; Otherwise, as relay switch SW
1during disconnection, PIN diode P
1cut-off, this microstrip line branch road disconnects.The relay switch SW of microstrip line branch road
1open and close controlling can realize manually.But for high-frequency circuit, farthest to reduce parasitic disturbances, and will circuit board size be reduced, integrated maximization, relay switch SW
1preferably be connected with single-chip microcomputer, and in use by Single-chip Controlling relay switch SW
1opening and closing.
The signal produced according to the short circuit characteristic of microstrip line can along microstrip line total reflection and the contrary signal of polarization, the Signal averaging that the signal exported and microstrip line reflect can produce the extremely narrow signal of width, relay switch is selected by single-chip microcomputer, control the conducting of PIN diode, just can realize the selection of microstrip line, different according to the pulse duration that the length of different microstrip line then produces, calculate microstrip line length according to actual needs.
Adjustable pulse drive circuit is owing to having electric capacity C
1with resistance R
1the accelerating circuit formed in parallel, to bipolar transistor T
2have and accelerate conducting effect, improve its break-make conversion speed.Driving source V
tthe triggering signal width produced can by having electric capacity C
2, potentiometer R
2with bipolar transistor T
2the timing circuit formed regulates.Strobe pulse width circuit comprises short-circuit micro-band line, and due to the characteristic of short-circuit micro-band line, the signal of generation can along microstrip line total reflection and the contrary signal of polarization, and the Signal averaging that the signal of output and microstrip line reflect can produce the extremely narrow signal of width.The width of signal determines according to the time delay along microstrip line reflection, and the width of pulse signal is directly proportional to the length of microstrip line.Selected the break-make of relay switch by single-chip microcomputer, thus determine the conducting of PIN diode, thus the selected microstrip line length needed, then determine the width of pulse.
Claims (5)
1. the selectable burst pulse generator of pulsewidth, comprises burst pulse generator body, and described burst pulse generator body comprises circuit adjustable pulse drive circuit and avalanche transistor pulses generation; The input termination driving source V of adjustable pulse drive circuit
t, the output of adjustable pulse drive circuit is connected with the input of avalanche transistor pulses generation; It is characterized in that: the output of avalanche transistor pulses generation is connected to one and can selects pulse width circuit;
It is described that to select pulse width circuit to comprise more than 2 groups or 2 groups structures identical and mutually in the microstrip line branch road be connected in parallel;
Often organize microstrip line branch road and comprise electric capacity C
5, PIN diode P
1, short-circuit micro-band line TL
1, resistance R
5with relay switch SW
1; Electric capacity C
5one end be divided into two-way, a road is formed can select the input of pulse width circuit, is connected with the output of avalanche transistor pulse-generating circuit, and the formation of another road can select the output of pulse width circuit, i.e. the output of burst pulse generator body; Electric capacity C
5the other end connect PIN diode P
1anode, PIN diode P
1negative electrode through short-circuit micro-band line TL
1rear ground connection GND; Resistance R
5one end connect PIN diode P
1anode, resistance R
5the other end through relay switch SW
1or be directly connected with bias voltage Vdd;
Often organize the short-circuit micro-band line TL of microstrip line branch road
1length all not identical.
2. the selectable burst pulse generator of a kind of pulsewidth according to claim 1, is characterized in that: described adjustable pulse drive circuit comprises bipolar transistor T
2, electric capacity C
1, C
2, resistance R
1with potentiometer R
2;
Electric capacity C
1one end, resistance R
1one end and potentiometer R
2one end be connected, and form the input of adjustable pulse drive circuit, i.e. the input of burst pulse generator body, with driving source V
tconnect; Potentiometer R
2the other end connect electric capacity C
2one end and bipolar transistor T
2base stage; Electric capacity C
2the other end and bipolar transistor T
2the equal ground connection GND of emitter; Electric capacity C
1the other end and resistance R
1the other end and bipolar transistor T
2collector electrode be connected, and form the output of adjustable pulse drive circuit, be connected with the input of avalanche transistor pulse-generating circuit.
3. the selectable burst pulse generator of a kind of pulsewidth according to claim 1, is characterized in that: described avalanche transistor pulse-generating circuit comprises bipolar transistor T
1, resistance R
c, R
4, R
lwith electric capacity C
4, C
3;
Electric capacity C
3one end form the input of avalanche transistor pulse-generating circuit, be connected with the output of adjustable pulse drive circuit; Electric capacity C
3the other end and bipolar transistor T
1base stage and resistance R
4one end be connected; Bipolar transistor T
1collector electrode be divided into two-way, a road is through resistance R
cbe connected with power supply VCC, another road meets electric capacity C
4one end; Electric capacity C
4the other end and resistance R
lone end be connected, and form the output on avalanche transistor pulse electrogenesis road, be connected with the input of pulse width circuit can be selected; Bipolar transistor T
1emitter, resistance R
4the other end and resistance R
lother end ground connection GND.
4. the selectable burst pulse generator of a kind of pulsewidth according to claim 3, is characterized in that: described resistance R
cit is a potentiometer.
5. the selectable burst pulse generator of a kind of pulsewidth according to claim 3, is characterized in that: described bias voltage Vdd is variable bias voltage or fixed bias voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510522311.9A CN105049000A (en) | 2015-08-24 | 2015-08-24 | Optional-pulse-width narrow pulse generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510522311.9A CN105049000A (en) | 2015-08-24 | 2015-08-24 | Optional-pulse-width narrow pulse generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105049000A true CN105049000A (en) | 2015-11-11 |
Family
ID=54455244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510522311.9A Pending CN105049000A (en) | 2015-08-24 | 2015-08-24 | Optional-pulse-width narrow pulse generator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105049000A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105743441A (en) * | 2016-01-27 | 2016-07-06 | 西安电子工程研究所 | Fast high-current pulse excitation circuit with adjustable pulse width, amplitude and intra-pulse slope |
| CN107465405A (en) * | 2017-09-18 | 2017-12-12 | 东莞博力威电池有限公司 | A kind of persistence level turns impulse circuit |
| CN107834834A (en) * | 2017-11-06 | 2018-03-23 | 湖北三江航天万峰科技发展有限公司 | A kind of power tube drive device with power-down protection |
| CN116345299A (en) * | 2023-02-20 | 2023-06-27 | 安徽庆宇光电科技有限公司 | Multi-wavelength light source driving control circuit |
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|---|---|---|---|---|
| EP1545001A2 (en) * | 2003-12-17 | 2005-06-22 | TDK Corporation | Radar apparatus |
| CN102121983A (en) * | 2010-01-07 | 2011-07-13 | 中国科学院电子学研究所 | Ultra-wideband radar pulse transmitter and method |
| CN103929154A (en) * | 2014-04-30 | 2014-07-16 | 中国科学院电子学研究所 | Picosecond single recurrent pulse transmitter |
| CN204886898U (en) * | 2015-08-24 | 2015-12-16 | 桂林电子科技大学 | Pulse width optional burst pulse generator |
-
2015
- 2015-08-24 CN CN201510522311.9A patent/CN105049000A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1545001A2 (en) * | 2003-12-17 | 2005-06-22 | TDK Corporation | Radar apparatus |
| CN102121983A (en) * | 2010-01-07 | 2011-07-13 | 中国科学院电子学研究所 | Ultra-wideband radar pulse transmitter and method |
| CN103929154A (en) * | 2014-04-30 | 2014-07-16 | 中国科学院电子学研究所 | Picosecond single recurrent pulse transmitter |
| CN204886898U (en) * | 2015-08-24 | 2015-12-16 | 桂林电子科技大学 | Pulse width optional burst pulse generator |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105743441A (en) * | 2016-01-27 | 2016-07-06 | 西安电子工程研究所 | Fast high-current pulse excitation circuit with adjustable pulse width, amplitude and intra-pulse slope |
| CN105743441B (en) * | 2016-01-27 | 2018-07-03 | 西安电子工程研究所 | The adjustable rapid large-current pulse exciting circuit of slope in a kind of pulsewidth, amplitude and arteries and veins |
| CN107465405A (en) * | 2017-09-18 | 2017-12-12 | 东莞博力威电池有限公司 | A kind of persistence level turns impulse circuit |
| CN107834834A (en) * | 2017-11-06 | 2018-03-23 | 湖北三江航天万峰科技发展有限公司 | A kind of power tube drive device with power-down protection |
| CN116345299A (en) * | 2023-02-20 | 2023-06-27 | 安徽庆宇光电科技有限公司 | Multi-wavelength light source driving control circuit |
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Application publication date: 20151111 |