CN105048262B - 一种改进谐振腔的窄线宽准分子激光器 - Google Patents
一种改进谐振腔的窄线宽准分子激光器 Download PDFInfo
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- CN105048262B CN105048262B CN201510468233.9A CN201510468233A CN105048262B CN 105048262 B CN105048262 B CN 105048262B CN 201510468233 A CN201510468233 A CN 201510468233A CN 105048262 B CN105048262 B CN 105048262B
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CN105048262B true CN105048262B (zh) | 2018-10-19 |
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CN105655870B (zh) * | 2015-12-11 | 2019-08-02 | 中国人民解放军国防科学技术大学 | 一种基于棱镜扩束的可调谐光栅外腔半导体激光器 |
CN108493751A (zh) * | 2018-01-19 | 2018-09-04 | 北京科益虹源光电技术有限公司 | 一种波长稳定控制装置 |
Citations (3)
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US4985898A (en) * | 1989-06-14 | 1991-01-15 | Matsushita Electric Industrial Co., Ltd. | Narrow-band laser apparatus |
CN102969649A (zh) * | 2012-12-20 | 2013-03-13 | 中国科学院光电研究院 | 准分子激光器复合腔 |
CN102983485A (zh) * | 2012-11-30 | 2013-03-20 | 中国科学院上海光学精密机械研究所 | 窄线宽准分子激光器 |
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JPH0212979A (ja) * | 1988-06-30 | 1990-01-17 | Toshiba Corp | 狭帯域ガスレーザ発振装置 |
JPH0216782A (ja) * | 1988-07-04 | 1990-01-19 | Toshiba Corp | 狭帯域レーザ装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US4985898A (en) * | 1989-06-14 | 1991-01-15 | Matsushita Electric Industrial Co., Ltd. | Narrow-band laser apparatus |
CN102983485A (zh) * | 2012-11-30 | 2013-03-20 | 中国科学院上海光学精密机械研究所 | 窄线宽准分子激光器 |
CN102969649A (zh) * | 2012-12-20 | 2013-03-13 | 中国科学院光电研究院 | 准分子激光器复合腔 |
CN103701025A (zh) * | 2012-12-20 | 2014-04-02 | 中国科学院光电研究院 | 自种子注入双腔结构准分子激光器系统 |
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Effective date of registration: 20200806 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee before: Research Institute of aerospace information innovation, Chinese Academy of Sciences Effective date of registration: 20200806 Address after: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee after: Research Institute of aerospace information innovation, Chinese Academy of Sciences Address before: 100094, No. 9 Deng Nan Road, Beijing, Haidian District Patentee before: Academy of Opto-Electronics, Chinese Academy of Sciences |
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Effective date of registration: 20210312 Address after: 100176 building 10, 156 Jinghai 4th Road, Daxing Economic and Technological Development Zone, Beijing Patentee after: BEIJING RSLASER OPTO-ELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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