CN105048043B - A kind of broadband attenuator based on attenuation compensation - Google Patents
A kind of broadband attenuator based on attenuation compensation Download PDFInfo
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- CN105048043B CN105048043B CN201510445807.0A CN201510445807A CN105048043B CN 105048043 B CN105048043 B CN 105048043B CN 201510445807 A CN201510445807 A CN 201510445807A CN 105048043 B CN105048043 B CN 105048043B
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Abstract
The invention belongs to microwave device design field, more particularly to a kind of broadband attenuator using the amount compensation process making that decays.The present invention designs the mode of two or more attenuators cascades with differential declines trend that attenuation is flat by the basic attenuator units of simple designs, is applicable the high broadband attenuator of frequency.Include medium substrate per the structure of one-level attenuator, film resistor, match microstrip line, grounding electrode.Wherein, film resistor includes two straight-through resistance R1With two grounding resistance R2, the interconnection of two grounding electrodes and substrate back earth plate is realized by way of the winding ground connection of substrate end face.Applying frequency is greatly improved compared with conventional films attenuator in the present invention, and inband flatness is excellent, is grounded without punching, and technique is simple.
Description
Technical field
The present invention relates to a kind of broadband attenuator applied to high frequency, belong to microwave device design field.
Background technology
Attenuator is dual-port device, and main function has Regulate signal transimission power size, improves impedance matching etc..It is different
System is also different to the attenuation size requirements of attenuator, small to arrive several dB, greatly to tens dB, or even dB up to a hundred.Radio communication skill
The development of art proposes higher requirement to each part in microwave radio communication chain, and attenuator also should be to higher applying frequency
Development.
Attenuator based on planar structure mainly includes two kinds of π types attenuator and T-shaped attenuator.Traditional attenuator,
Under upper frequency, due to by resistance itself parasitic parameter, connecting the influence such as micro-strip of resistance, the port standing wave of attenuator can be caused
Poor, pad value can tilt with frequency.Attenuation flatness refers to the flat journey of attenuator attenuation in the range of certain frequency
Degree, it is the important parameter for weighing attenuator performance, the method for generally improving attenuation flatness is to carry out Match circuits, i.e.,
Change the structure of electrode and resistance, this method can improve attenuation flatness, such as Xi'an spacing wireless to a certain extent
Power technology research institute disclosed one kind in the patent document of its Application No. 201410217006.4 in 2014 and is applied to DC
To the MIC attenuators of superfrequency, it by ground structure by being designed to the quasi- sector open-circuit microstrip line construction of a quarter to improve
Band attenuation amount flatness；Meanwhile during attenuator of the design with greater attenuation value, the resistance of straight-through resistance and grounding resistance is led to
Often differ larger, this will make troubles the layout of attenuator.Thus, single means technical difficulty is big, and effect
It is limited.
The method that the cascade of multiple attenuators is formed to new attenuator has early had been reported that, such as Xian Electronics Science and Technology University
High swallow utilize the mode by the cascade of two attenuators to devise a variety of attenuators, but the attenuation and shape of its attenuator at different levels
It is all identical, so to expect that the preferable attenuator of attenuation flatness must be such that every grade of attenuator has and preferably decline
Flatness is reduced, adds the design difficulty of attenuator.
The content of the invention
For the deficiency of above-mentioned technical problem, the invention provides a kind of broadband attenuator based on attenuation compensation, lead to
Cross simple designs and obtain a series of basic attenuator units, due to that each basic attenuator unit need not put down very in broadband
It is smooth, thus design difficulty substantially reduces, and then cascades two or more basic attenuator units with differential declines trend
Mode form target attenuator, to improve the flatness of attenuation in broadband.
The attenuator of the present invention is formed by the cascade of at least two attenuator units, and attenuators at different levels include：Medium substrate is thin
Film resistance, match microstrip line and grounding electrode.
The attenuator respectively cascaded at least two-stage attenuator increases attenuation trend on the contrary, i.e. one increases with frequency with frequency
Attenuation increases, and another reduces with frequency increase attenuation.
The two straight-through resistance and two grounding resistances of every grade of attenuator, which connect together, forms interdigitate resistor network knot
Structure, two grounding electrodes are interconnected by way of the winding ground connection of substrate end face with substrate back earth plate.
Two straight-through resistances of every grade of attenuator are identical, and grounding resistance resistance is identical.The phase of adjacent two-stage attenuator
Adjacent two straight-through resistance can be merged into the straight-through resistance R of a resistance, i.e. first order attenuator right-hand member1With second level attenuator
The straight-through resistance R of left end3Merge into a resistance R5, R5=R1+R3.Resistance in resistor network is film resistor.
The length L of all grounding resistances1It is identical, grounding resistance width is calculated by resistance and sheet resistance.It is all
The length L of straight-through resistance2It is identical, straight-through resistor width is calculated by resistance and sheet resistance.
Traditional broadband attenuator design is all to improve band attenuation amount flatness by carrying out Match circuits, this
Although kind of a method can improve attenuation flatness to a certain extent, complex designing, improvement effect are limited.The present invention is to decline
Decrement has the mode that the attenuator stage of different inclination rules is linked to improve inband flatness, design method with frequency
Simply.
When design has the attenuator of greater attenuation value, the resistance of straight-through resistance and grounding resistance generally differs larger, with
Exemplified by the T-shaped attenuators of 30dB, the resistance of two straight-through resistance is 46.9 Ω, and the resistance of grounding resistance is 3.2 Ω, both resistances
As many as 15 times are differed, and the sheet resistance of film is generally all fixed, this will make troubles the layout of attenuator.Such as
We design 30dB attenuators at the mode that is cascaded with the attenuator that attenuation is respectively 10dB and 20dB to fruit, then minimum resistance value
For 10.1 Ω, maximum resistance value is 40.9 Ω, and both are only differed more than four times, beneficial to the layout of attenuator.
In summary the beneficial effects of the invention are as follows：Two or more attenuators with opposite attenuation trend are cascaded
Mode improves the flatness of attenuation in broadband, reduces the design difficulty of attenuator.Grounding electrode is rolled up by substrate end face
Mode around ground connection interconnects with substrate back earth plate, without beating grounding through hole, reduces the introducing of unnecessary parasitic parameter, letter
Technological process is changed；Design method is simple.
Brief description of the drawings
Fig. 1 is attenuator structure schematic diagram of the present invention.
Fig. 2 is the two level 13dB attenuator structure schematic diagrames being made up of 5dB attenuators and the cascade of 8dB attenuators.
Fig. 3 is the S of 5dB, 8dB, one-level 13dB and two level 13dB attenuators in 0-20GHz11Simulation result figure.
Fig. 4 is the S of 5dB, 8dB, one-level 13dB and two level 13dB attenuators in 0-20GHz21Simulation result figure.
Fig. 5 is the three-level 20dB attenuator structure schematic diagrames being made up of the cascade of 5dB, 10dB and 5dB attenuator.
Fig. 6 is the S of 5dB, 10dB, one-level 20dB and three-level 20dB attenuators in 0-20GHz11Simulation result figure.
Fig. 7 is the S of 5dB, 10dB, one-level 20dB and three-level 20dB attenuators in 0-20GHz21Simulation result figure.
Embodiment
The embodiment of the present invention is further described below in conjunction with the accompanying drawings.
As shown in figure 1, attenuator is formed by two attenuator cascades, every grade of attenuator includes：Medium substrate, thin-film electro
Resistance, match microstrip line, grounding electrode.
The two straight-through resistance and two grounding resistances of every grade of attenuator, which connect together, forms interdigitate resistor network knot
Structure, first order attenuator right-hand member leads directly to resistance and second level attenuator left end leads directly to resistance and merges into a resistance.Two ground connection
Electrode is interconnected by way of the winding ground connection of substrate end face with substrate back earth plate.
The length of all grounding resistances is identical, is all L1；The length of all straight-through resistance is identical, is all L2。
Two straight-through resistances of every grade of attenuator are identical.
The characteristic impedance Z of input electrode and output electrode0It is 50 Ω.
The sheet resistance of film resistor is 50 Ω/sq.
Two-stage attenuator with frequency increase attenuation trend on the contrary, and inband flatness it is identical.
It is calculated per straight-through the resistance R and grounding resistance R ＇ of one-level attenuator by following method：
If input, output port matching return loss are zero, the attenuation of designed attenuator is S21, resistance value R and R ＇
Solved by following equation：
Embodiment 1
The attenuator for the amount compensation process design that decays the invention provides a utilization.Set first with one-level T-type structure
5dB, 8dB and 13dB attenuator are counted, from figs. 3 and 4 it can be seen that in DC-20GHz frequency ranges, 5dB attenuators are with frequency
The increase attenuation of rate gradually increases, and 8dB attenuators are gradually reduced with the increase attenuation of frequency, and the band of two attenuators is interior flat
It is 1dB that degree, which tilts, and it is 2dB that the inband flatness of one-level 13dB attenuators, which tilts, and return loss is superior to -20dB.By 5dB and
8dB attenuators, which cascade up, forms two level 13dB attenuators as shown in Figure 2, can be seen that by Fig. 2 and Fig. 3 simulation result
It is 0.2dB that its inband flatness, which tilts, hence it is evident that is better than the simulation result of one-level 13dB attenuators.
Embodiment 2
The present embodiment devises the three-level attenuator that an attenuation is 20dB using amount compensation process of decaying.Its by 5dB,
Tri- attenuator cascades of 10dB and 5dB form, and structure chart is as shown in Figure 5.As can be seen from Figures 6 and 7, in DC-20GHz frequencies
In the range of, 5dB attenuators gradually increase with the increase attenuation of frequency, and it is 0.8dB that inband flatness, which tilts,；10dB attenuators with
The increase attenuation of frequency is gradually reduced, and it is 1.5dB that inband flatness, which tilts, and the inband flatness of one-level 20dB attenuators tilts
For 5.5dB, return loss is superior to -20dB.It is 1dB that the inband flatness of three-level 20dB attenuators, which tilts, hence it is evident that is better than one-level
20dB attenuators.
Claims (5)
1. a kind of broadband attenuator based on attenuation compensation, being formed by the cascade of at least two attenuators, every grade of attenuator includes,
Medium substrate, film resistor, match microstrip line and grounding electrode, it is characterised in that：
The attenuator often cascaded at least two-stage attenuator increases attenuation trend difference with frequency, and one of them increases with frequency
Big attenuation increase, another reduces with frequency increase attenuation；
The two straight-through resistance and two grounding resistances of adjacent two-stage attenuator, which connect together, forms interdigitate resistor network knot
Structure, two grounding electrodes are interconnected by way of the winding ground connection of substrate end face with substrate back earth plate.
2. the broadband attenuator as claimed in claim 1 based on attenuation compensation, it is characterised in that：The two of every grade of attenuator
Individual straight-through resistance is identical, and grounding resistance resistance is identical.
3. the broadband attenuator as claimed in claim 1 based on attenuation compensation, it is characterised in that：The adjacent two-stage attenuator
Two neighboring straight-through resistance merge into the straight-through resistance R of a resistance, i.e. first order attenuator right-hand member1With second level attenuator
The straight-through resistance R of left end3Merge into a resistance R5, R5=R1+R3。
4. the broadband attenuator as claimed in claim 1 based on attenuation compensation, it is characterised in that：The institute of every grade of attenuator
There is the length L of grounding resistance1It is identical, grounding resistance width is calculated by resistance and sheet resistance；All straight-through resistance
Length L2It is identical, straight-through resistor width is calculated by resistance and sheet resistance.
5. the broadband attenuator as claimed in claim 1 based on attenuation compensation, it is characterised in that：The electricity of the broadband attenuator
The resistance hindered in network is film resistor.
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| CN105048043B (en) * | 2015-07-27 | 2018-02-13 | 电子科技大学 | A kind of broadband attenuator based on attenuation compensation |
| CN106848514B (en) * | 2017-02-17 | 2019-05-14 | 电子科技大学 | A kind of tunable cavity based on tunable capacitor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2308126C1 (en) * | 2005-12-12 | 2007-10-10 | Казанский государственный технический университет им. А.Н. Туполева | Microstrip attenuator |
| US8143969B2 (en) * | 2009-10-09 | 2012-03-27 | State Of The Art, Inc. | Multiple tap attenuator microchip device |
| JP4925996B2 (en) * | 2007-10-19 | 2012-05-09 | 株式会社アドバンテスト | Attenuators and electronic devices |
| CN202651325U (en) * | 2012-07-20 | 2013-01-02 | 齐齐哈尔大学 | X-waveband film attenuator |
| CN104377412A (en) * | 2014-11-05 | 2015-02-25 | 中北大学 | Programmed stepped attenuator based on MEMS switch |
| CN105048043A (en) * | 2015-07-27 | 2015-11-11 | 电子科技大学 | Broadband attenuator based on attenuation compensation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090015355A1 (en) * | 2007-07-12 | 2009-01-15 | Endwave Corporation | Compensated attenuator |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2308126C1 (en) * | 2005-12-12 | 2007-10-10 | Казанский государственный технический университет им. А.Н. Туполева | Microstrip attenuator |
| JP4925996B2 (en) * | 2007-10-19 | 2012-05-09 | 株式会社アドバンテスト | Attenuators and electronic devices |
| US8143969B2 (en) * | 2009-10-09 | 2012-03-27 | State Of The Art, Inc. | Multiple tap attenuator microchip device |
| CN202651325U (en) * | 2012-07-20 | 2013-01-02 | 齐齐哈尔大学 | X-waveband film attenuator |
| CN104377412A (en) * | 2014-11-05 | 2015-02-25 | 中北大学 | Programmed stepped attenuator based on MEMS switch |
| CN105048043A (en) * | 2015-07-27 | 2015-11-11 | 电子科技大学 | Broadband attenuator based on attenuation compensation |
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Effective date of registration: 20221214 Address after: 611731 no.d136, innovation center, No.4, Xixin Avenue, high tech Zone, Chengdu City, Sichuan Province Patentee after: Chengdu Maike Technology Co.,Ltd. Address before: 611731, No. 2006, West Avenue, Chengdu hi tech Zone (West District, Sichuan) Patentee before: University of Electronic Science and Technology of China |