CN109411857A - A kind of full mould substrate integration wave-guide attenuator of broadband surface-mount resistor type - Google Patents
A kind of full mould substrate integration wave-guide attenuator of broadband surface-mount resistor type Download PDFInfo
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- CN109411857A CN109411857A CN201811454185.8A CN201811454185A CN109411857A CN 109411857 A CN109411857 A CN 109411857A CN 201811454185 A CN201811454185 A CN 201811454185A CN 109411857 A CN109411857 A CN 109411857A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/22—Attenuating devices
- H01P1/222—Waveguide attenuators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/22—Attenuating devices
- H01P1/227—Strip line attenuators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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- Manufacturing & Machinery (AREA)
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Abstract
The present invention relates to microwave circuit technologies, and in particular to a kind of full mould substrate integration wave-guide attenuator of broadband surface-mount resistor type.The present invention opens an intermediate line of rabbet joint on SIW ontology and is used to install Chip-R, five parallel resistances of series resistance among classical surface-mount resistor π type attenuator are replaced, each resistance is five times of resistance before, two ground resistance resistance values remain unchanged simultaneously, constitute improved surface-mount resistor π type attenuator to realize attenuation function.When the SIW attenuator obtained based on this mentality of designing corresponds to 1dB, 2dB, 3dB, 4dB and 5dB attenuation, bandwidth of operation is 7.2-13.7GHz (62.2%), and bandwidth of operation is greatly expanded.
Description
Technical field
The present invention relates to microwave attenuators, and in particular to a kind of full mould substrate integration wave-guide of broadband surface-mount resistor type
(Substrate Integrated Waveguide, SIW) attenuator, for widening the work of full mould substrate integration wave-guide attenuator
Make bandwidth.
Background technique
Attenuator can be adjusted the power of microwave signal, be commonly used to decaying to high-power signal into scheduled performance number
Range improves circuit stability, improves the port identity etc. of matching network.Common attenuator is realized in various transmission lines
(such as microstrip line, co-planar waveguide, coplanar waveguide ground), common circuit structure topological form are π type or T-type.
Substrate integration wave-guide has many advantages, such as that loss is low, performance is good, is easily integrated, as a kind of novel guided wave technology
Through being widely used in microwave and millimetre-wave circuit.Substrate integration wave-guide itself is also equipped with the excellent of conventional metals waveguide and microstrip line
Point can very easily realize high performance microwave millimetre-wave circuit structure in planar circuit.
The decaying of signal power can be made in full mould substrate integration wave-guide attenuator according to existing document report
It with π type attenuation network, is made of three resistive elements, but the attenuator that this topological structure obtains, bandwidth is also into one
Walk the space widened.The bibliography of full mould substrate integration wave-guide (SIW) attenuator is as follows:
Researcher Dong-Sik Eom etc. by SIW body construction, introducing three surface-mount resistor type π type attenuators,
To realize decaying to power, 32% relative bandwidth is obtained, referring to document Dong-Sik Eom, Hai-Young Lee,
“An X-band substrate integrated waveguide attenuator,”Microwave and Optical
Technology Letters, 2014,56 (10): 2446-2449.
The bibliography of half module substrate integrated wave guide (HMSIW) attenuator is as follows:
Researcher Dong-Sik Eom etc. passes through in HMSIW (Half Mode Substrate Integrated
Waveguide) in body construction, improved surface-mount resistor π type attenuator is introduced, it will be in classical surface-mount resistor π type attenuator
Between a series resistance be changed to the forms of three resistor coupled in parallel, in addition two ground resistances, 5 resistance in total, to realize pair
The decaying of power, while bandwidth has been widened, relative bandwidth 68.6%, referring to document Dong-Sik Eom, Hai-Young
Lee,“Broadband Half Mode Substrate Integrated Waveguide Attenuator in 7.29–
14.90GHz, " IEEE Microwave and Wireless Components Letters, 2015,25 (9): 564-566.
In both the above method, first method introduces three surface-mount resistors in SIW ontology to realize that π type decays
Device, structure is simple, but relative bandwidth is only 32% (8.04-11.12GHz), has very big room for promotion；Second method exists
In HMSIW ontology, improved surface-mount resistor π type attenuator is introduced, by the intermediate series electrical of classical surface-mount resistor π type attenuator
Resistance is changed to three resistor coupled in parallel by one, amounts to five surface-mount resistors, and relative bandwidth reaches 68.6%.
Summary of the invention
For above-mentioned there are problem or deficiency, for the bandwidth of operation for widening full mould substrate integration wave-guide attenuator.The present invention
Provide a kind of full mould substrate integration wave-guide attenuator of broadband surface-mount resistor type.
The full mould substrate integration wave-guide attenuator of the broadband surface-mount resistor type is based on conventional full mould substrate integration wave-guide
Circuit structure, including SIW ontology, transition line and microstrip line.
SIW ontology width edge length is Ws, and long side length Ls, the width edge length of transition line is Wt, and narrow side length is Wm, long
Degree be Lt, narrow side connect width be Wm, the microstrip line that length is Lm, four angles of SIW ontology are each introduced into a matching
Plated-through hole, diameter are Match_d, amount to 4.
It is equipped with an intermediate line of rabbet joint on SIW ontology to be used to that Chip-R is installed, the intermediate line of rabbet joint is set to the length of SIW ontology
On the perpendicular bisector of side, length Gap_L, width Gap_W, geometric center are overlapped with the geometric center of SIW ontology.
The Chip-R realizes attenuation function, the improved surface-mount resistor π using improved surface-mount resistor π type attenuator
Type attenuator is the structure that the series resistance among classical surface-mount resistor π type attenuator is changed to five resistor coupled in parallel by one
Form.Five Chip-Rs perpendicular to the intermediate line of rabbet joint by center away from being equidistantly positioned for res_L on the intermediate line of rabbet joint, and it is most intermediate
The central point of Chip-R be overlapped with the central point of SIW ontology.
Along the direction of signal transmission, opened up on the metal layer of SIW there are two about the symmetrical transition structure of medial launder,
Length of the transition structure away from intermediate line of rabbet joint respective side edge is b；The shape of transition structure is by a rectangle and isosceles triangle structure
At the bottom edge of isosceles triangle is overlapped as common edge with the broadside of rectangle；Transition structure is long close to one end of the intermediate line of rabbet joint
Degree be Kon_L, the rectangular end that width is Kon_W；One end far from the intermediate line of rabbet joint is triangle end, and bottom edge length is Kon_W,
The high length in bottom edge is a.
It is equipped with a rectangular metal block inside the rectangular end of each transition structure, is equipped with grounding through hole in metal block, uses
To install the ground resistance of improved surface-mount resistor π type attenuator；Inside the rectangular end of transition structure, design has the length to be
Ground_L, width is the rectangular metal block of Ground_W, and inside the rectangular metal block, it is connecing for Hole_d that design, which has diameter,
Ground through-hole；Wherein the symmetry axis of transition structure, rectangular metal block and grounding through hole is on same straight line, and with SIW sheet
The long side of body is parallel.
Two ground resistances of improved surface-mount resistor π type attenuator are connect respectively at the both ends of most intermediate Chip-R,
One end is connected with interlaminated resistance, on another ground connection rectangular block terminated among tapering transition, as shown in Figure 1.
The design method of the attenuator is as follows:
First selecting dielectric constant is εr, with a thickness of the SIW medium substrate of h, then in target frequency bands design SIW ontology.For
The size of SIW, i.e. its width Ws are obtained, the selection for first having to Ws meets lowest operating frequency fL> fc, that is, need to meet
It is obtained after simplification
Ws is selected to make SIW work in TE according to conditions above10Mode.Due to the calculation method and rectangle of SIW characteristic impedance
Waveguide is similar, therefore the characteristic impedance formula of SIW is approximately
The width Ws of SIW ontology is under conditions of meeting formula (2), width Ws, dielectric substrate thickness h, medium substrate dielectric
Constant εr, vacuum light speed c, centre frequency f be known quantity, then we can obtain corresponding according to formula (3)
The characteristic impedance Z of SIW0。
Then improved surface-mount resistor π type attenuator is designed, for the π type attenuator of classical three resistance composition, if
Interlaminated resistance resistance value is Rs, two ground resistance resistance values are Rh, voltage attenuation amount is A, therefore voltage attenuation multipleFrom
And it obtains
According to the characteristic impedance Z of formula (4) and formula (5) and SIW0With target attenuation A, to calculate classical surface-mount resistor
The interlaminated resistance R of π type attenuatorsWith ground resistance RhResistance value.Since improved surface-mount resistor π type attenuator uses five resistances
Value is Rs' resistor coupled in parallel substitute Rs, therefore each parallel resistance resistance value Rs'=5Rs, while two ground resistance resistance values
It remains unchanged, is Rh。
The working principle of the invention is: electromagnetic wave is in SIW ontology with TE1,0Mode is propagated, in transmission structure just
Reverse side is covered by metal layer to constrain electromagnetic wave propagation boundary.In conventional SIW structure, loss is most of from medium
The dielectric loss angle tangent of substrate itself.In order to increase the loss on propagation ducts, we introduce dissipative cell-resistance.Work as electricity
When magnetic wave is propagated in SIW ontology, electromagnetic wave will be stopped to continue to propagate by SIW surface texture that the intermediate line of rabbet joint separates,
If placing surface-mount resistor in intermediate line of rabbet joint two sides at this time, TE can propagated1,0A degree of decline is carried out to signal while mould
Subtract.Five parallel resistances of series resistance among classical surface-mount resistor π type attenuator are replaced, each resistance is for it
Five times of preceding resistance, while two ground resistance resistance values remain unchanged, and constitute improved surface-mount resistor π type attenuator.This
Invention is using this improved surface-mount resistor π type attenuator to realize attenuation function.The SIW attenuator obtained based on this mentality of designing
When corresponding to 1dB, 2dB, 3dB, 4dB and 5dB attenuation, bandwidth of operation is 7.2-13.7GHz (62.2%)；Compared to first
Piece bibliography, bandwidth of operation are greatly expanded.
In conclusion the present invention has greatly widened the bandwidth of operation of full mould substrate integration wave-guide attenuator.
Detailed description of the invention
Fig. 1 is the front view of attenuator of the present invention；
Fig. 2 is the resistance layout viewing of attenuator of the present invention；
Fig. 3 is the emulation S21 parameter curve (0dB, 1dB, 2dB, 3dB, 4dB, 5dB) of embodiment；
Fig. 4 is the emulation S11 parameter curve (0dB, 1dB, 2dB, 3dB, 4dB, 5dB) of embodiment；
Fig. 5 is the actual measurement S21 parameter curve (0dB, 1dB, 2dB, 3dB, 4dB, 5dB) of embodiment；
Fig. 6 is the actual measurement S11 parameter curve (0dB, 1dB, 2dB, 3dB, 4dB, 5dB) of embodiment；
Appended drawing reference: microstrip line -1, transition line -2, SIW ontology -3, Chip-R -4, the intermediate line of rabbet joint -5 match through-hole -
6, transition structure -7, grounding through hole -8.
Specific embodiment
According to the aforementioned SIW attenuator based on surface-mount resistor referred to, the dielectric substrate in RT/Duroid 5880 is realized
On, relative dielectric constant 2.2, loss angle tangent 0.0009, with a thickness of 0.508mm.All Chip-Rs select
0402 package resistance, the resistance across the parallel resistance for having 5 similar resistances in the intermediate line of rabbet joint, positioned at intermediate line of rabbet joint center
Respectively there is a ground resistance at both ends.
After electromagnetic simulation software Ansoft HFSS is emulated and optimized, optimal parameter size is obtained, specifically
It is as shown in the table:
| Parameter | Size (mm) |
| Ws | 16 |
| Ls | 32.4 |
| Match_d | 1.75 |
| Wm | 1.56 |
| Lm | 5 |
| Wt | 4.4 |
| Lt | 4.8 |
| Gap_L | 12.1 |
| Gap_W | 0.5 |
| Kon_L | 1 |
| Kon_W | 1.5 |
| Ground_L | 1 |
| Ground_W | 0.7 |
| Hole_d | 0.3 |
| res_L | 2.25 |
| a | 7.1 |
| b | 1 |
| h | 0.508 |
According to emulation size above, simulation result such as Fig. 3,4 are obtained:
| Attenuation | Rs′ | Rh | S21(dB) | S11(dB) | Frequency range (GHz) | Relative bandwidth |
| 0dB | 0.1Ω | 10KΩ | 0.31±0.11 | ≤-15.33 | 6.8-16.3 | 82.3% |
| 1dB | 12Ω | 360Ω | 1.61±0.26 | ≤-15.47 | 6.9-16.4 | 81.5% |
| 2dB | 24Ω | 180Ω | 2.76±0.32 | ≤-15.42 | 7-16.3 | 79.8% |
| 3dB | 36Ω | 120Ω | 3.72±0.43 | ≤-14.99 | 7.1-16.3 | 78.6% |
| 4dB | 51Ω | 91Ω | 4.52±0.58 | ≤-15.06 | 7.2-16.2 | 76.9% |
| 5dB | 62Ω | 75Ω | 5.1±0.74 | ≤-14.97 | 7.3-16.1 | 75.2% |
Simulation result shows the (opposite band in the working frequency range of 7.3-16.1GHz of the SIW attenuator based on surface-mount resistor
Wide 75.2%) intrinsic Insertion Loss is 0.31 ± 0.11dB, when resistance value respectively corresponds 1dB, 2dB, 3dB, 4dB, 5dB decaying
When, corresponding attenuation be 1.61 ± 0.26,2.76 ± 0.32,3.72 ± 0.43,4.52 ± 0.58dB and 5.1 ±
0.74dB.From the result of emulation it is found that the relative bandwidth of attenuator has obtained great expansion, and attenuation characteristic and standing wave meet
It is required that illustrating that the present invention has very big advantage to the expansion of bandwidth.
According to the physical size of emulation, PCB printed board has been made, and has been surveyed, measured result such as Fig. 5,6:
| Attenuation | Rs′ | Rh | S21(dB) | S11(dB) | Frequency range (GHz) | Relative bandwidth |
| 0dB | 0.1Ω | 10KΩ | 0.67±0.4 | ≤-12.4 | 6.8-13.7 | 67.3% |
| 1dB | 12Ω | 360Ω | 2.2±0.5 | ≤-12.8 | 6.9-13.9 | 67.3% |
| 2dB | 24Ω | 180Ω | 3.4±0.45 | ≤-13 | 7-14.1 | 67.3% |
| 3dB | 36Ω | 120Ω | 4.2±0.36 | ≤-12.6 | 7.1-14.1 | 66% |
| 4dB | 51Ω | 91Ω | 5.13±0.45 | ≤-12.6 | 7.1-13.9 | 64.8% |
| 5dB | 62Ω | 75Ω | 5.72±0.66 | ≤-12.3 | 7.2-14.2 | 65.4% |
The result of actual measurement shows that (the phase in the working frequency range of 7.2-13.7 GHz of the broadband SIW attenuator based on surface-mount resistor
To bandwidth 62.2%), intrinsic Insertion Loss is 0.67 ± 0.4dB, and when resistance value respectively corresponds 1dB, 2dB, 3dB, 4dB, 5dB decline
When subtracting, corresponding attenuation be 2.2 ± 0.5 dB, 3.4 ± 0.45 dB, 4.2 ± 0.36 dB, 5.13 ± 0.45 dB and
5.72±0.66 dB.Compared to 32% relative bandwidth that SIW attenuator in first bibliography obtains, phase of the invention
There is the raising connect by about one time to bandwidth.
Claims (2)
1. the full mould substrate integration wave-guide attenuator of a kind of broadband surface-mount resistor type, based on conventional full mould substrate integration wave-guide
Circuit structure, including SIW ontology, transition line and microstrip line, it is characterised in that:
SIW ontology width edge length is Ws, and long side length Ls, the width edge length of transition line is Wt, and narrow side length is Wm, and length is
Lt, narrow side connect width be Wm, the microstrip line that length is Lm, four angles of SIW ontology are each introduced into the metal of a matching
Change through-hole, diameter is Match_d, amounts to 4；
It is equipped with an intermediate line of rabbet joint on SIW ontology to be used to that Chip-R is installed, the intermediate line of rabbet joint is set in the long side of SIW ontology
On vertical line, length Gap_L, width Gap_W, geometric center are overlapped with the geometric center of SIW ontology；
The Chip-R realizes that attenuation function, the improved surface-mount resistor π type decline using improved surface-mount resistor π type attenuator
Subtracting device is the structure shape that the series resistance among classical surface-mount resistor π type attenuator is changed to five resistor coupled in parallel by one
Formula；Five Chip-Rs perpendicular to the intermediate line of rabbet joint by center away from being equidistantly positioned for res_L on the intermediate line of rabbet joint, and it is most intermediate
The central point of Chip-R is overlapped with the central point of SIW ontology；
Along the direction of signal transmission, opened up on the metal layer of SIW there are two about the symmetrical transition structure of medial launder, transition
Length of the structure away from intermediate line of rabbet joint respective side edge is b；The shape of transition structure is made of a rectangle and isosceles triangle, etc.
The bottom edge of lumbar triangle shape is overlapped as common edge with the broadside of rectangle；Transition structure is that length is close to one end of the intermediate line of rabbet joint
Kon_L, the rectangular end that width is Kon_W；One end far from the intermediate line of rabbet joint is triangle end, and bottom edge length is Kon_W, bottom edge
High length is a；
It is equipped with a rectangular metal block inside the rectangular end of each transition structure, grounding through hole is equipped in metal block, for pacifying
Fill the ground resistance of improved surface-mount resistor π type attenuator；Inside the rectangular end of transition structure, design has the length to be
Ground_L, width is the rectangular metal block of Ground_W, and inside the rectangular metal block, it is connecing for Hole_d that design, which has diameter,
Ground through-hole；Wherein the symmetry axis of transition structure, rectangular metal block and grounding through hole is on same straight line, and with SIW sheet
The long side of body is parallel；
Two ground resistances of improved surface-mount resistor π type attenuator are connect respectively in the both ends of most intermediate Chip-R, one end
It is connected with interlaminated resistance, on another ground connection rectangular block terminated among tapering transition.
2. the design method of the full mould substrate integration wave-guide attenuator of broadband surface-mount resistor type as claimed in claim is as follows:
Step 1 selectes dielectric constant first as εr, with a thickness of the SIW medium substrate of h, then in target frequency bands design SIW ontology；Ws
Selection meet lowest operating frequency fL> fc, that is, need to meet
It is obtained after simplification
Ws is selected to make SIW work in TE according to conditions above10The characteristic impedance formula of mode, SIW is approximately:
The width Ws of SIW ontology is under conditions of meeting formula (2), width Ws, dielectric substrate thickness h, medium substrate dielectric constant
εr, vacuum light speed c, centre frequency f be known quantity, the characteristic impedance Z of corresponding SIW is obtained according to formula (3)0；
Step 2, the improved surface-mount resistor π type attenuator of design；
For the π type attenuator of classical three resistance composition, if interlaminated resistance resistance value is Rs, two ground resistance resistance values are
Rh, voltage attenuation amount is A, therefore voltage attenuation multipleTo
According to the characteristic impedance Z of formula (4) and formula (5) and SIW0With target attenuation A, the surface-mount resistor π type to calculate classical declines
Subtract the interlaminated resistance R of devicesWith ground resistance RhResistance value；Each parallel resistance resistance value Rs'=5Rs, while two ground resistances
Resistance value remains unchanged, and is Rh。
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110336106A (en) * | 2019-07-19 | 2019-10-15 | 成都频岢微电子有限公司 | A kind of miniaturized substrate integrated waveguide filter and its higher order filter |
| CN110336107A (en) * | 2019-06-24 | 2019-10-15 | 成都频岢微电子有限公司 | A kind of band logical or the HMSIW filter restructural with resistance |
| CN110752427A (en) * | 2019-10-15 | 2020-02-04 | 电子科技大学 | Millimeter wave attenuator of substrate integrated waveguide |
| CN110752426A (en) * | 2019-10-15 | 2020-02-04 | 电子科技大学 | Substrate integrated waveguide equalizer |
| CN111082194A (en) * | 2019-10-30 | 2020-04-28 | 西安电子科技大学 | Substrate integrated slot gap waveguide transmission line with slow wave effect |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110336107A (en) * | 2019-06-24 | 2019-10-15 | 成都频岢微电子有限公司 | A kind of band logical or the HMSIW filter restructural with resistance |
| CN110336106A (en) * | 2019-07-19 | 2019-10-15 | 成都频岢微电子有限公司 | A kind of miniaturized substrate integrated waveguide filter and its higher order filter |
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| CN110752427A (en) * | 2019-10-15 | 2020-02-04 | 电子科技大学 | Millimeter wave attenuator of substrate integrated waveguide |
| CN110752426A (en) * | 2019-10-15 | 2020-02-04 | 电子科技大学 | Substrate integrated waveguide equalizer |
| CN110752426B (en) * | 2019-10-15 | 2021-03-30 | 电子科技大学 | Substrate integrated waveguide equalizer |
| CN110752427B (en) * | 2019-10-15 | 2021-07-06 | 电子科技大学 | Millimeter wave attenuator of substrate integrated waveguide |
| CN111082194A (en) * | 2019-10-30 | 2020-04-28 | 西安电子科技大学 | Substrate integrated slot gap waveguide transmission line with slow wave effect |
| CN111082194B (en) * | 2019-10-30 | 2021-07-02 | 西安电子科技大学 | Substrate integrated slot gap waveguide transmission line with slow wave effect |
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