CN104201441B - Coupling line broadband phase shifter for LTE system - Google Patents
Coupling line broadband phase shifter for LTE system Download PDFInfo
- Publication number
- CN104201441B CN104201441B CN201410426042.1A CN201410426042A CN104201441B CN 104201441 B CN104201441 B CN 104201441B CN 201410426042 A CN201410426042 A CN 201410426042A CN 104201441 B CN104201441 B CN 104201441B
- Authority
- CN
- China
- Prior art keywords
- group
- microstrip line
- coupled microstrip
- output port
- phase shifter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a coupling line broadband phase shifter for an LTE system. The coupling line broadband phase shifter comprises a phase shift reference circuit and a phase shift control circuit. The phase shift reference circuit comprises a first set of coupling microstrip lines and a first top end connecting point, wherein a first input port is connected with a first output port through the microstrip lines. The phase shift control circuit comprises a second set of coupling microstrip lines, a third set of coupling microstrip lines, a second top end connecting point and a tail end connecting point, wherein a second input port is connected with a second output port through the microstrip lines. The first input port is used for inputting a signal for phase reference, the second input port is used for inputting a signal for phase control, and a phase difference of the signals output by the first output port and the second output port serves as the designated phase shift amount. A designated phase shift value is achieved by using coupling microstrip structures, working bandwidth is widened, and the coupling line broadband phase shifter is simple, compact and practical and keeps small area while achieving a stable phase shift value.
Description
Technical field
The invention belongs to the technical field of microwave transmission device, it is related to a kind of coupling line broadband phase shift for LTE system
Device.
Background technology
Phase shifter is the device that a kind of phase place to ripple is adjusted, according to specified phase shift value by the phase place of output signal
The certain angle of movement.Therefore the phase shifter is widely used in electricity such as feeding network, power amplifier, intelligent antenna array front ends
Lu Zhong, is one of core devices of composition microwave radio circuit.
For making output signal obtain the phase shift value specified, traditional phase shifter is using the electrical length between two transmission lines not
With producing phase difference value as phase shift value, the phase bandwidth of this phase shifter is narrower, wideband structural difficult to realize.And use at present
The Xue Fuman phase shifter utilize coupling line between phase place formed ripple shape frequency response, can export with reference line in certain frequency range
Phase place has the Frequency point of multiple same phases, in the case of the adjustable margin of error, maintains certain phase shift in required frequency band
Value.Therefore, on the basis of Xue husband graceful phase shifter, grown up therewith using the technology that coupling line constructs the phase shifter.But, make
Make as fixed phase line with traditional transmission line that Xue Fuman phase shifter entire area is larger, working band is with specified shifting
Mutually value increases and successively decreases, and the value of output signal phase shift simultaneously is not sufficiently stable, and is not easy to use in other microwave radio devices.
Therefore, it is necessary to provide that a kind of area is little, bandwidth, phase shift value stabilization broad-band phase shifter so that its can gram
Take the defect that the area that in prior art, the phase shifter exists is big, frequency band is narrow, phase shift value is unstable.
Content of the invention
It is an object of the invention to provide a kind of coupling line broad-band phase shifter for LTE system, the broadband phase shift of the present invention
Utensil has the advantages that area is little, broadband, phase contrast stable.
According to an aspect of the invention, it is provided a kind of coupling line broad-band phase shifter for LTE system, including Jie
Scutum 9 and the phase shifter circuit being laid on dielectric-slab 9, described phase shifter circuit includes phase-shifted reference circuit A and Phaseshift controlling
Circuit B it is characterised in that：Described phase-shifted reference circuit A includes first group of coupled microstrip line 5, the first top junction point 11, first
Input port 1 and the first output port 2, wherein：First group of coupled microstrip line 5 is formed as two microstrip lines be arrangeding in parallel, should
Article two, one end of microstrip line is commonly connected to the first top junction point 11, and the other end is connected respectively to first input port 1 and
One output port 2；Described Phaseshift controlling circuit B includes second group of coupled microstrip line 6, the 3rd group of coupled microstrip line 7, the second top
Junction point 12, end junction point 13, the second input port 3 and the second output port 4, wherein：Second group of coupled microstrip line 6 is formed
For two microstrip lines be arrangeding in parallel, one end of this two microstrip lines is commonly connected to the second top junction point 12, and the other end divides
It is not connected to the second input port 3 and the second output port 4；And the 3rd group of coupled microstrip line 7 is formed as two articles and be arranged in parallel
Microstrip line, one end of this two microstrip lines is commonly connected to end junction point 13, and the other end is connected respectively to the second input
Mouth 3 and the second output port 4.
Wherein, in the present invention as stated above, wherein, the input signal of described first input port 1 is as phase reference signal, and
The input signal of two input ports 3 as phase control signal, the first output port 2 and the second output port 4 output signal
Phase difference value is as specified phase-shift phase.
Wherein, in the present invention as stated above, the front of described dielectric-slab 9 arranges described phase shifter circuit, and back side setting metal connects
Ground 10, this dielectric-slab 9 is additionally provided with the via 8 running through front and back, and described via 8 is connected to the 3rd group of coupled microstrip line
Between 7 and metal ground plane 10.
Wherein, in the present invention as stated above, first input port 1 and the first output port 2 are formed as microstrip line, according to first
The substantially vertical mode of group coupled microstrip line 5 extends to the edge of dielectric-slab 9, thus it is defeated to form first input port 1 and first
Exit port 2.
Wherein, in the present invention as stated above, the first top junction point 11 connects the tip clearance between first group of coupled microstrip line 5,
Second top junction point 12 connects the tip clearance between second group of coupled microstrip line 6, and end junction point 13 connects the 3rd group of coupling
Tip gap between microstrip line 7, the end decibel of second group of coupled microstrip line 6 is connected to the top of the 3rd group of coupled microstrip line 7,
And respectively the second input port 3 and the second output port 4 are connected to by microstrip line in described junction.
Wherein, in the present invention as stated above, the width of the first top junction point 11, the second top junction point 12 and end junction point 13
Degree is identical, and 5, second group of coupled microstrip line 6 of first group of coupled microstrip line that length is each connected with it respectively and the 3rd group couple
The distance between centers of tracks of microstrip line 7 is consistent.
Wherein, in the present invention as stated above, when described phase shifter circuit is under even mould excitation state, first group of coupled microstrip line
5 and second group of coupled microstrip line 6 even mould equivalent circuit be in open-circuit condition, the even mould equivalent circuit of the 3rd group of coupled microstrip line 7
In short-circuit condition；When described phase shifter circuit is under strange mould excitation state, 5, the second group of coupling of first group of coupled microstrip line is micro-
The strange mould equivalent circuit of band wire 6 and the 3rd group of coupled microstrip line 7 is all in short-circuit condition.
Wherein, in the present invention as stated above, first group of coupled microstrip line 5 and second group of coupled microstrip line 6 and the 3rd group of coupling
The length of microstrip line 7 is respectively L1=28.67mm, L2=19.8mm, L3=19.88mm, width is respectively W1=2.59mm, W2=
1.7mm, W3=1.8mm, distance between centers of tracks is respectively S1=0.63mm, S2=1.8mm, S3=0.56mm；It is connected to first input port
1 and first output port 2 micro belt line width WR=2.72mm, length LR=10mm；It is connected to the second input port 3 and second
The micro belt line width W of output port 4R=2.72mm, length LR+ 0.83mm=10.83mm；First top junction point 11 and second
Top junction point 12 and end junction point 13 width C=0.4mm.
Wherein, in the present invention as stated above, first group of coupled microstrip line 5 and second group of coupled microstrip line 6 and the 3rd group of coupling
Each parameter of microstrip line 7 meets below equation：
Z0 2(Zo2+Zo3)(Ze3tan2θ2-Ze2)-Ze2Ze3Zo2Zo3tan2θ2=0,
Z0 2(Zo1tan2θ1+Ze1)-Ze1Zo1(Zo1tan2θ1+Ze1)=0,
Wherein
A=Ze2Ze3, b=Z0(Ze2cot(θ2)-Ze3tan(θ2)), c=Zo2Zo3tan(θ2), d=Z0(Zo2+Zo3)；
Wherein, θ1For the electrical length of first group of coupled microstrip line 5, θ2It is second group of coupled microstrip line 6 and the 3rd group of coupling is micro-
The electrical length of band wire 7, Z0For first input port 1 and the second input port 3 and the first output port 2 and the second output port
4 characteristic impedance, Ze1、Zo1It is respectively the strange modular character impedance of first group of coupled microstrip line 5 and even modular character impedance, Ze2、Zo2Point
Not Wei the strange modular character impedance of second group of coupled microstrip line 6 and even modular character impedance, Ze3、Zo3It is respectively the 3rd group of coupling microstrip
The strange modular character impedance of line 7 and even modular character impedance,For the phase shift value between the first output port 2 and first input port 1, η
The phase shift value specified for broad-band phase shifter output for the phase shift value between the second output port 4 and the second input port 3, Δ σ.
Wherein, in the present invention as stated above, 5, second group of coupled microstrip line 6 of first group of coupled microstrip line and the 3rd group of coupling are micro-
Each parameter of band wire 7 meets following conditions：
Z0=50 Ω, Δ σ=90 °, θ1=131 °, θ2=90 °,
Ze1=59 Ω, Zo1=42.4 Ω, Ze2=70 Ω, Zo2=60 Ω,
Ze3=75 Ω, Zo3=50 Ω,
The central task frequency of coupling line broad-band phase shifter is f=2.2GHz.
The present invention is used for the coupling line broad-band phase shifter of LTE system, has the advantages that：By using coupling microstrip
The phase shift value that structure realization is specified, widens bandwidth of operation；Circuit structure is simple, symmetrical, compact, practical, can be in the work of LTE system
Make to obtain more than 80% relative bandwidth in frequency range, stable phase shift value, keep less area simultaneously.
Below by drawings and Examples, technical scheme is described in further detail.
Brief description
Fig. 1 shows the three dimensional structure diagram of the coupling line phase shifter for LTE system of the embodiment of the present invention；
Fig. 2 shows the electrical block diagram of phase shifter shown in Fig. 1；
Fig. 3 a shows the equivalent circuit diagram of the coupling line phase shifter for LTE system of the preferred embodiment of the present invention；
Fig. 3 b shows equivalent circuit diagram under even mould encourages for the phase shifter shown in Fig. 3 a；
Fig. 3 c shows equivalent circuit diagram under strange mould encourages for the phase shifter shown in Fig. 3 a；
Fig. 4 shows return loss S of the coupling line phase shifter for LTE system of the embodiment of the present invention11And S33Imitative
Very with test S parameter figure；
Fig. 5 shows the insertion loss S of the coupling line phase shifter for LTE system of the embodiment of the present invention21And S43Imitative
Very with test S parameter figure, and the phase contrast of output port emulation and test.
Specific embodiment
For making the object, technical solutions and advantages of the present invention of greater clarity, with reference to specific embodiment and join
According to accompanying drawing, the present invention is described in more detail.It should be understood that these descriptions are simply exemplary, and it is not intended to limit this
Bright scope.Additionally, in the following description, eliminate the description to known features and technology, to avoid unnecessarily obscuring this
The concept of invention.
Fig. 1 shows the three dimensional structure diagram of the coupling line phase shifter for LTE system of the preferred embodiment of the present invention.
As shown in figure 1, the coupling line broad-band phase shifter for LTE system of the preferred embodiment of the present invention, including dielectric-slab 9
With the phase shifter circuit being laid on dielectric-slab 9.Described phase shifter circuit includes phase-shifted reference circuit A and Phaseshift controlling circuit B.
Referring to Fig. 1, described dielectric-slab 9 constitutes the tellite of present invention phase shifter, for carrying the whole phase shifter
Circuit.In one particular embodiment of the present invention, the thickness of dielectric-slab 9 is set to 1mm, and dielectric constant is set to 2.65.Move
Phase device circuit is arranged on the front of dielectric-slab 9, and the back side of dielectric-slab 9 is provided with metal ground plane 10.Further, dielectric-slab 9 sets
There is the via 8 running through front and back, described via 8 is connected to the 3rd group between coupled microstrip line 7 and metal ground plane 10, with
Realize the ground connection of coupled microstrip line 7.As shown in figure 1, via 8 is preferably located on coupled microstrip line 7 end.
Referring to Fig. 1, phase-shifted reference circuit A includes first group of coupled microstrip line 5, the first top junction point 11, first inputs
Port 1 and the first output port 2.Wherein, first group of coupled microstrip line 5 is formed as two microstrip lines be arrangeding in parallel, this two
One end of microstrip line is commonly connected to the first top junction point 11, and the other end of two microstrip lines is connected respectively to first input end
Mouth 1 and the first output port 2.
As shown in figure 1, first input port 1 and the first output port 2 are formed as microstrip line, micro- according to coupling with first group
The substantially vertical mode of band wire 5 extends to the edge of dielectric-slab 9, thus forming first input port 1 and the first output port 2.
As described above, the first top junction point 11 is used for connecting the tip clearance of first group of coupled microstrip line 5.
Referring to Fig. 1, Phaseshift controlling circuit B includes second group of coupled microstrip line 6, the 3rd group of coupled microstrip line 7, the second top
Junction point 12, end junction point 13, the second input port 3 and the second output port 4.Wherein, second group of coupled microstrip line 6 is formed
For two microstrip lines be arrangeding in parallel, one end of this two microstrip lines is commonly connected to the second top junction point 12, and the other end divides
It is not connected to the second input port 3 and the second output port 4.3rd group of coupled microstrip line 7 be formed as two articles be arranged in parallel micro-
Band wire, one end of this two microstrip lines is commonly connected to end junction point 13, and the other end is connected respectively to the second input port 3 He
Second output port 4.As shown in figure 1, the second input port 3 and the second output port 4 are again formed as microstrip line, according to second
Group coupled microstrip line 6 and the 3rd group of substantially vertical mode of coupled microstrip line 7 extend to the edge of dielectric-slab 9, thus forming the
Two input ports 3 and the second output port 4.
As shown in figure 1, the second top junction point 12 is used for connecting the tip clearance of second group of coupled microstrip line 6, end is even
Contact 13 is used for connecting the tip gap of the 3rd group of coupled microstrip line 7, and the end of second group of coupled microstrip line 6 is coupled with the 3rd group
The top of microstrip line 7 is connected, and is connected to the second input port 3 and the second outfan by microstrip line respectively in junction
Mouth 4.
In working band, described first input port 1 is used for input signal as phase reference, described second input
Mouthfuls 3 are used for input signal as phase controlling, by the cooperation of described phase shifter reference circuit and phase shifter control circuit, first
The phase difference value of output port 2 and the second output port 4 output signal reaches the default phase-shift phase according to different demands, specifically
Can be found in as follows preferably specific embodiment.
As shown in figure 1, constituting first group of coupled microstrip line 5 of phase-shifted reference circuit A and constituting the of Phaseshift controlling circuit B
Two groups of coupled microstrip lines 6 and the 3rd group of coupled microstrip line 7 are respectively positioned on same level, that is, the front being arranged on dielectric-slab 9 is in
Axial symmetry is arranged.First input port 1, the first output port 2, the second input port 3 and the second output port 4 all equally set
Put the front in dielectric-slab 9.
Fig. 2 shows the electrical block diagram of phase shifter shown in Fig. 1.
As shown in Fig. 2 constituting first group of coupled microstrip line 5 of phase-shifted reference circuit A and constituting the of Phaseshift controlling circuit B
Two groups of coupled microstrip lines 6 and the 3rd group of coupled microstrip line 7 are respectively positioned on same level, axisymmetricly arrange.First input end
Mouth the 1, first output port 2, the second input port 3 and the second output port 4 are arranged at the front of dielectric-slab 9.
As shown in Fig. 2 in phase-shifted reference circuit A, the width of the first top junction point 11 is C, first group of coupling microstrip
The length and width of line 5 is respectively L1And W1, the distance between centers of tracks between two microstrip lines is S1, this two microstrip lines are connected to first
The width of the microstrip line of input port 1 and the first output port 2 is WR, length is LR, in Phaseshift controlling circuit B, the second top
Junction point 12 is mutually all C with the width of end junction point 13 with the width of the first top junction point 11, second group of coupled microstrip line 6
It is respectively L with the length of the 3rd group of coupled microstrip line 72And L3, width is respectively W2And W3, two in second group of coupled microstrip line 6
Distance between centers of tracks between microstrip line is S2, in the 3rd group of coupled microstrip line 7, the distance between centers of tracks between two articles of microstrip lines is S3, form first
Input port 1, the first output port 2, the second input port 3 is identical with the width of the microstrip line of the second output port 4 and is
WR.In order that second group of coupled microstrip line 6 is connected with input/output port it is preferred that making with the 3rd group of coupled microstrip line 7 simultaneously
The length that the microstrip line of the second input port 3 and the second output port 4 must be formed is more defeated than the first input port 1 and first being formed
The long 0.83mm of micro-strip line length, as L of exit port 2R+0.83mm.
In a preferred embodiment of the present invention, its concrete size is as follows：WR=2.72mm, W1=2.59mm, W2=
1.7mm, W3=1.8mm；S1=0.63mm, S2=1.8mm, S3=0.56mm；L1=28.67mm, L2=19.8mm, L3=
19.88mm, LR=10mm；C=0.4mm.
Fig. 3 a shows the equivalent circuit diagram of the coupling line phase shifter for LTE system of the preferred embodiment of the present invention.
As shown in Figure 3 a, the broad-band phase shifter equivalent circuit in figure of the preferred embodiment of the present invention, in phase-shifted reference circuit A
Two microstrip lines of one group of coupled microstrip line 5 pass through the first top junction point 11 and connect formation the first parallel circuit, and draw respectively
Go out first input port 1 and the first output port 2, two microstrip lines of second group of coupled microstrip line 6 in Phaseshift controlling circuit B
Connected by the second top junction point 12 and form the second parallel circuit, two articles of microstrip lines of the 3rd group of coupled microstrip line 7 pass through end
End junction point 13 connects formation the 3rd parallel circuit, the second parallel circuit and the 3rd parallel circuit in series, draws at the place of being connected in series
Go out the second input port 3 and the second output port 4, additionally, being grounded at end junction point 13.
Fig. 3 b shows equivalent circuit diagram under even mould encourages for the phase shifter shown in Fig. 3 a.
As shown in Figure 3 b, when the phase shifter circuit of the present invention is under even mould excitation state, apply size two ports
Identical and direction identical voltage source, at this moment the second top junction point 12 there is no electric current flowing over the ground, coupled microstrip line
First output port 2, metal ground plane 10 and dielectric-slab 9 collectively form an electric capacity, now first group of coupled microstrip line 5 and
All in open-circuit condition, even modular character impedance is respectively Z to the even mould equivalent circuit of two groups of coupled microstrip lines 6e1、Ze2；3rd group of coupling
Microstrip line 7 is in short-circuit condition, and even modular character impedance is Ze3.
Fig. 3 c shows equivalent circuit diagram under strange mould encourages for the phase shifter shown in Fig. 3 a.
As shown in Figure 3 c, when the phase shifter circuit of the present invention is under strange mould excitation state, two ports apply size phase
Etc. voltage source in opposite direction, now it is rendered as zero potential with respect to ground at the second top junction point 12, you can be considered as micro-strip
Line is directly grounded, and the therefore second top junction point 12 is in short-circuit condition.In addition, as shown in Figure 3 a, the 3rd group of coupled microstrip line 7
It is initially set to ground state, namely short-circuit condition.As can be seen here, 5, second group of coupled microstrip line 6 of first group of coupled microstrip line
With the strange mould equivalent circuit of the 3rd group of coupled microstrip line 7 all in short-circuit condition, strange modular character impedance is respectively Zo1、Zo2And Zo3.
Wherein, in equivalent circuit when strange mould excitation and even mould encourage, the value of each parameter meets below equation：
Z0 2(Zo1tan2θ1+Ze1)-Ze1Zo1(Zo1tan2θ1+Ze1)=0 (1)
Z0 2(Zo2+Zo3)(Ze3tan2θ2-Ze2)-Ze2Ze3Zo2Zo3tan2θ2=0 (2)
Wherein a=Ze2Ze3, b=Z0(Ze2cot(θ2)-Ze3tan(θ2)), c=Zo2Zo3tan(θ2), d=Z0(Zo2+Zo3)；
Wherein, θ1For the electrical length of first group of coupled microstrip line 5, θ2It is second group of coupled microstrip line 6 and the 3rd group of coupling is micro-
The electrical length of band wire 7, Z0For input port 1 and 3 and output port 2 and 4 characteristic impedance, Ze1、Zo1For 5 points of coupled microstrip line
Characteristic impedance not under the excitation of even mould and the excitation of strange mould, Ze2、Zo2Encouraging and strange mould in even mould respectively for coupled microstrip line 6
Characteristic impedance under excitation, Ze3、Zo3For the feature resistance under the excitation of even mould and the excitation of strange mould respectively of the 3rd group of coupled microstrip line 7
It is anti-,For the phase shift value between the first output port 2 and first input port 1, η is the second output port 4 and the second output port 3
Between phase shift value, Δ σ is the broad-band phase shifter phase contrast specified of output.
One specific embodiment of the present invention is described below.
In this specific embodiment of the present invention, work centre frequency is f=2.2GHz, and first input port 1, second is defeated
Inbound port 3 is Z with the characteristic impedance of first and output port 2, the second output port 40=50 Ω, phase difference σ of selection
For 90 °, it is θ by the parameters that equation (1), (2), (3), (4) and (5) calculates circuit1=131 °, θ2=90 °, Ze1
=59 Ω, Zo1=42.4 Ω, Ze2=70 Ω, Zo2=60 Ω, Ze3=75 Ω, Zo3=50 Ω, according to the dielectric of above-mentioned dielectric-slab
Constant, thickness, draw following parameter (can be found in Fig. 2), first input port 1, the second input by transmission line software for calculation
Mouth 3 and the first output port 2, the width W of the microstrip line of the second output port 4R=2.72mm, first group of coupled microstrip line 5
It is respectively W with the width of second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 71=2.59mm, W2=1.7mm, W3=
1.8mm, the distance between centers of tracks of first group of coupled microstrip line 5 and second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 is respectively S1
=0.63mm, S2=1.8mm, S3=0.56mm；The coupling microstrip line length being obtained by HFSS simulation optimization is respectively L1=
28.67mm, L2=19.8mm, L3=19.88mm, the first top junction point 11, the second top junction point 12 and end junction point
First group of coupled microstrip line 5 that 13 length are each connected with it and second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7
Distance between centers of tracks is consistent, and width is respectively provided with C=0.4mm through HFSS optimization Simulation；First input port 1, the second input port 3 with
And the length of first output port 2, the microstrip line of the second output port 4 can select suitable value according to practical situation, in order to
Welding and convenient test, reduce loss is it is preferred that take L simultaneouslyR=10mm.
Fig. 4 shows return loss S of the coupling line phase shifter for LTE system of the embodiment of the present invention11And S33Imitative
Very with test S parameter figure.
Fig. 5 shows the insertion loss S of the coupling line phase shifter for LTE system of the embodiment of the present invention21And S43Imitative
Very with test S parameter figure, and the phase contrast of output port emulation and test.
In test chart, S parameter is used for describing the situation transmitting signal between each port, and conventional dB value represents.SiiRefer to
The reflection coefficient looked to i port during the load of all of the port matching connection, SiiRepresent that energy can pass through i mostly less than -10dB
Port, only few energy reflection goes back to i port, and transmissibility is high；SijWhen representing the matching connection load of other ports, j port to i
The transmission coefficient of port, first input port 1, the first output port 2, the second input port 3, the second output port 4 refer to respectively
Port 1, port 2, port 3 and port 4, SijRepresent and have lost how many by i port in the transmission to j port energy, lower expression
Device loss is lower, and performance is better.
As shown in Figure 4, Figure 5, electronic simulation result and test result frequency shift (FS) be within 200MHz, preferred embodiment
The coupling line phase shifter for LTE system is operated in the broadband of 1.34GHz to 3.20GHz.Compared with desired result, emulation
With actual measurement structure have in working frequency points slightly shifted, but this coupling line phase shifter arrive in the 1.34GHz of LTE system
3.20GHz reflection coefficient S11 and S33, all below -10dB, illustrates that its matching degree and isolation are good, can avoid energy
Keep the transmission of energy on the premise of reflection, and be inserted into loss S21 and S43 in bandwidth of operation being respectively less than 0.5dB, power consumption
Extremely low.
As shown in figure 5, the first output port 2, the phase contrast between the second output port 4 is 90 ° in double frequency-band ±
6.72 °, phase contrast is stable, and less, relative bandwidth can reach 80% to fluctuating margin, is capable of the purpose of design of the present invention.
As described above, a kind of coupling line phase shifter for LTE system of the present invention, real by using coupled microstrips arrangements
The phase shift value now specified, widens bandwidth of operation；Circuit structure is simple, symmetrical, compact, practical, can be in the working frequency range of LTE system
Interior obtain more than 80% relative bandwidth, stable phase shift value, keep less area simultaneously.
It should be appreciated that the above-mentioned specific embodiment of the present invention is used only for exemplary illustration or explains the present invention's
Principle, and be not construed as limiting the invention.Therefore, that is done in the case of without departing from the spirit and scope of the present invention is any
Modification, equivalent, improvement etc., should be included within the scope of the present invention.Additionally, claims purport of the present invention
Covering the whole changes falling in scope and border or the equivalents on this scope and border and repair
Change example.
Claims (9)
1. a kind of coupling line broad-band phase shifter for LTE system, it includes, dielectric-slab (9) and being laid on dielectric-slab (9)
Phase shifter circuit, described phase shifter circuit include phase-shifted reference circuit (A) and Phaseshift controlling circuit (B) it is characterised in that：
Described phase-shifted reference circuit (A) includes first group of coupled microstrip line (5), the first top junction point (11), first input end
Mouth (1) and the first output port (2), wherein：
First group of coupled microstrip line (5) is formed as two microstrip lines be arrangeding in parallel, and one end of this two microstrip lines connects jointly
To the first top junction point (11), the other end is connected respectively to first input port (1) and the first output port (2)；
Described Phaseshift controlling circuit (B) includes second group of coupled microstrip line (6), the 3rd group of coupled microstrip line (7), the second top even
Contact (12), end junction point (13), the second input port (3) and the second output port (4), wherein：
Second group of coupled microstrip line (6) is formed as two microstrip lines be arrangeding in parallel, and one end of this two microstrip lines connects jointly
To the second top junction point (12), the other end is connected respectively to the second input port (3) and the second output port (4)；And
3rd group of coupled microstrip line (7) is formed as two articles of microstrip lines be arrangeding in parallel, and one end of this two microstrip lines connects jointly
To end junction point (13), the other end is connected respectively to the second input port (3) and the second output port (4)；
Wherein, the front of described dielectric-slab (9) arranges described phase shifter circuit, back side setting metal ground plane (10), this medium
Plate (9) is additionally provided with the via (8) running through front and back, and described via (8) is connected to the 3rd group of coupled microstrip line (7) and gold
Belong between ground plane (10).
2. the coupling line broad-band phase shifter for LTE system according to claim 1, wherein, described first input port
(1) input signal as phase reference signal, the input signal of the second input port (3) as phase control signal, first
The phase difference value of output port (2) and the second output port (4) output signal is as specified phase-shift phase.
3. the coupling line broad-band phase shifter for LTE system according to claim 2 is it is characterised in that first input end
Mouth (1) and the first output port (2) are formed as microstrip line, prolong according to first group of substantially vertical mode of coupled microstrip line (5)
Reach the edge of dielectric-slab (9), thus forming first input port (1) and the first output port (2).
4. the coupling line broad-band phase shifter for LTE system according to claim 1 it is characterised in that
Described first top junction point (11) connects the tip clearance between first group of coupled microstrip line (5)；
Described second top junction point (12) connects the tip clearance between second group of coupled microstrip line (6)；
Described end junction point (13) connects the tip gap between the 3rd group of coupled microstrip line (7)；
The end of described second group of coupled microstrip line (6) is connected respectively to the top of the 3rd group of coupled microstrip line (7), and in institute
State junction and respectively the second input port (3) and the second output port (4) are connected to by microstrip line.
5. the coupling line broad-band phase shifter for LTE system according to claim 4 is it is characterised in that the first top connects
Contact (11), the second top junction point (12) are identical with the width of end junction point (13), and length is each connected with it respectively
The distance between centers of tracks of first group of coupled microstrip line (5), second group of coupled microstrip line (6) and the 3rd group of coupled microstrip line (7) is consistent.
6. the coupling line broad-band phase shifter for LTE system according to any one of claim 1-5 it is characterised in that
When described phase shifter circuit is under even mould excitation state, first group of coupled microstrip line (5) and second group of coupled microstrip line
(6) even mould equivalent circuit is in open-circuit condition, and the even mould equivalent circuit of the 3rd group of coupled microstrip line (7) is in short-circuit condition；And
When described phase shifter circuit is under strange mould excitation state, first group of coupled microstrip line (5), second group of coupled microstrip line
(6) the strange mould equivalent circuit of the and three group of coupled microstrip line (7) is in short-circuit condition.
7. the coupling line broad-band phase shifter for LTE system according to any one of claim 1-5 it is characterised in that
The length of first group of coupled microstrip line (5) and second group of coupled microstrip line (6) and the 3rd group of coupled microstrip line (7) is respectively
For L1=28.67mm, L2=19.8mm, L3=19.88mm, width is respectively W1=2.59mm, W2=1.7mm, W3=1.8mm,
Distance between centers of tracks is respectively S1=0.63mm, S2=1.8mm, S3=0.56mm；
It is connected to first input port (1) and the micro belt line width W of the first output port (2)R=2.72mm, length LR=10mm；
It is connected to the second input port (3) and the micro belt line width W of the second output port (4)R=2.72mm, length LR+0.83mm
=10.83mm；
First top junction point (11) and the second top junction point (12) and end junction point (13) width C=0.4mm.
8. the coupling line broad-band phase shifter for LTE system according to claim 6 is it is characterised in that first group couples
Each parameter of microstrip line (5) and second group of coupled microstrip line (6) and the 3rd group of coupled microstrip line (7) meets below equation：
Z0 2(Zo1tan2θ1+Ze1)-Ze1Zo1(Zo1tan2θ1+Ze1)=0,
Z0 2(Zo2+Zo3)(Ze3tan2θ2-Ze2)-Ze2Ze3Zo2Zo3tan2θ2=0,
Wherein
A=Ze2Ze3, b=Z0(Ze2cot(θ2)-Ze3tan(θ2)), c=Zo2Zo3tan(θ2), d=Z0(Zo2+Zo3)；
Wherein, θ1For the electrical length of first group of coupled microstrip line (5), θ2It is second group of coupled microstrip line (6) and the 3rd group of coupling is micro-
The electrical length of band wire (7), Z0For first input port (1) and the second input port (3) and the first output port (2) and second
The characteristic impedance of output port (4), Ze1、Zo1It is respectively the strange modular character impedance of first group of coupled microstrip line (5) and even modular character
Impedance, Ze2、Zo2It is respectively the strange modular character impedance of second group of coupled microstrip line (6) and even modular character impedance, Ze3、Zo3It is respectively
The strange modular character impedance of the 3rd group of coupled microstrip line (7) and even modular character impedance,For the first output port (2) and the first input
Phase shift value between port (1), η is the phase shift value between the second output port (4) and the second input port (3), and Δ σ is broadband phase shift
The phase shift value that device output is specified.
9. the coupling line broad-band phase shifter for LTE system according to claim 8 is it is characterised in that first group couples
Each parameter of microstrip line (5), second group of coupled microstrip line (6) and the 3rd group of coupled microstrip line (7) meets following conditions：
The central task frequency of described coupling line broad-band phase shifter is f=2.2GHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410426042.1A CN104201441B (en) | 2014-08-26 | 2014-08-26 | Coupling line broadband phase shifter for LTE system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410426042.1A CN104201441B (en) | 2014-08-26 | 2014-08-26 | Coupling line broadband phase shifter for LTE system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104201441A CN104201441A (en) | 2014-12-10 |
| CN104201441B true CN104201441B (en) | 2017-02-15 |
Family
ID=52086697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410426042.1A Active CN104201441B (en) | 2014-08-26 | 2014-08-26 | Coupling line broadband phase shifter for LTE system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104201441B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017091944A1 (en) * | 2015-11-30 | 2017-06-08 | 中国科学院微电子研究所 | Microstrip switch type phase shifter and phase shift module adopting same |
| CN105356014B (en) * | 2015-11-30 | 2018-05-08 | 中国科学院微电子研究所 | Microstrip switch type phase shifter and apply its phase shift block |
| CN110808438A (en) * | 2019-10-28 | 2020-02-18 | 常州安塔歌电子科技有限公司 | Miniaturized, low-cost 0/90 degree switch linear phase shifter |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101202369A (en) * | 2007-12-11 | 2008-06-18 | 中国电子科技集团公司第五十五研究所 | Miniature MEMS switching line phase shifter |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100538822B1 (en) * | 2003-05-27 | 2005-12-23 | 한국전자통신연구원 | Broadband Phase Shifter Using a Coupled Line and Parallel Open/Short Stubs |
-
2014
- 2014-08-26 CN CN201410426042.1A patent/CN104201441B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101202369A (en) * | 2007-12-11 | 2008-06-18 | 中国电子科技集团公司第五十五研究所 | Miniature MEMS switching line phase shifter |
Non-Patent Citations (1)
| Title |
|---|
| Novel Schiffman Phase Shifters;JosC Luis Ramos Quirarte等;《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》;19930131;第41卷(第1期);第9-13页，图1-8 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104201441A (en) | 2014-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102046408B1 (en) | A power divider with enhanced selectivity performance | |
| CN107086345A (en) | Ultra wide band wilkinson power divider | |
| CN109818127B (en) | Phase continuously adjustable crossing directional coupler | |
| CN104201441B (en) | Coupling line broadband phase shifter for LTE system | |
| CN111786068B (en) | Broadband directional coupler with harmonic suppression function | |
| CN104659450B (en) | A kind of broadband bandpass filter based on cross resonator | |
| CN103000977A (en) | Broadband novel microstrip line three-way power divider | |
| CN113611999A (en) | Broadband microwave circuit with low insertion loss and flat negative group delay characteristics | |
| CN205355223U (en) | Piece formula stromatolite directional coupler | |
| Rizvi et al. | Klopfenstein tapered 2–18 GHz microstrip balun | |
| CN105720345B (en) | Highly selective broadband coupler in crossing shape | |
| CN107240752B (en) | Miniaturized broadband branch line coupler based on patch loading technology | |
| CN109037870A (en) | Adjustable wide-band co-planar waveguide attenuator based on graphene nanometer sheet | |
| TWI703819B (en) | Dual-band transformer structure | |
| CN104319450A (en) | Ultra wide band bridge based on thick film manufacturing technology | |
| CN110061336A (en) | Four power splitter of integral substrate gap waveguide of encapsulation | |
| CN102324613A (en) | Power divider, electronic device, radio frequency front-end device and power dividing method | |
| CN202121048U (en) | Power divider, electronic device and radio frequency front end device | |
| Arshad et al. | 0 dB coupler employing slot technique on planar microstrip | |
| CN101599571A (en) | Directional coupler | |
| CN110233322A (en) | The one-to-many port Impedance of ultra wideband transmissions line converts power splitter | |
| Kim et al. | Compact three-way planar power divider using five-conductor coupled line | |
| WO2015184831A1 (en) | Pcb antenna and wireless terminal | |
| Jing et al. | Design of impedance transforming 90 degree patch hybrid couplers | |
| TWI538292B (en) | Signal coupler and signal transmission conductive structure included therein |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wu Yongle Inventor after: Liu Yuanan Inventor after: Zhou Siyue Inventor after: Li Shulan Inventor after: Yu Cuiping Inventor after: Wang Weimin Inventor after: Su Ming Inventor before: Wu Yongle Inventor before: Liu Yuanan Inventor before: Zhou Siyue Inventor before: Wei Shulan Inventor before: Yu Cuiping Inventor before: Wang Weimin Inventor before: Su Ming |
|
| COR | Change of bibliographic data | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |