CN104201441A - Coupling line broadband phase shifter for LTE system - Google Patents
Coupling line broadband phase shifter for LTE system Download PDFInfo
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- CN104201441A CN104201441A CN201410426042.1A CN201410426042A CN104201441A CN 104201441 A CN104201441 A CN 104201441A CN 201410426042 A CN201410426042 A CN 201410426042A CN 104201441 A CN104201441 A CN 104201441A
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Abstract
The invention discloses a coupling line broadband phase shifter for an LTE system. The coupling line broadband phase shifter comprises a phase shift reference circuit and a phase shift control circuit. The phase shift reference circuit comprises a first set of coupling microstrip lines and a first top end connecting point, wherein a first input port is connected with a first output port through the microstrip lines. The phase shift control circuit comprises a second set of coupling microstrip lines, a third set of coupling microstrip lines, a second top end connecting point and a tail end connecting point, wherein a second input port is connected with a second output port through the microstrip lines. The first input port is used for inputting a signal for phase reference, the second input port is used for inputting a signal for phase control, and a phase difference of the signals output by the first output port and the second output port serves as the designated phase shift amount. A designated phase shift value is achieved by using coupling microstrip structures, working bandwidth is widened, and the coupling line broadband phase shifter is simple, compact and practical and keeps small area while achieving a stable phase shift value.
Description
Technical field
The invention belongs to the technical field of microwave transmission device, relate to a kind of coupling line broad-band phase shifter for LTE system.
Background technology
Phase shifter is a kind of device that the phase place of ripple is adjusted, according to the phase shift value of appointment by the certain angle of the phase shifts of output signal.Therefore phase shifter is widely used in the circuit such as feeding network, power amplifier, intelligent antenna array front end, is one of core devices forming in microwave radio circuit.
For making output signal obtain the phase shift value of appointment, traditional phase shifter utilizes the difference of the electrical length between two transmission lines to produce phase difference value as phase shift value, and the phase bandwidth of this phase shifter is narrower, is difficult to realize wideband structural.And the graceful phase shifter of Xue husband using at present utilizes the frequency response of phase place formation ripple shape between coupling line, in certain frequency range, can there is with reference line output phase the Frequency point of a plurality of same phases, the in the situation that of the capable of regulating margin of error, in required frequency band, maintain certain phase shift value.Therefore,, on the basis of the graceful phase shifter of Xue husband, use the technology of coupling line structure phase shifter to grow up thereupon.But, use traditional transmission line larger as make the graceful phase shifter entire area of Xue husband with reference to phase line, working band is along with the phase shift value of appointment increases and successively decreases, and the value of output signal phase shift is simultaneously stable not, is not easy to use in other microwave radio device.
Therefore, be necessary to provide that a kind of area is little, the broad-band phase shifter of bandwidth, phase shift value stabilization, make it can overcome that the area that in prior art, phase shifter exists is large, frequency band is narrow, phase shift is worth unsettled defect.
Summary of the invention
The object of this invention is to provide a kind of coupling line broad-band phase shifter for LTE system, the advantage such as broad-band phase shifter of the present invention has that area is little, broadband, phase difference are stable.
According to an aspect of the present invention, a kind of coupling line broad-band phase shifter for LTE system is provided, comprise, dielectric-slab 9 and be laid in the phase shifter circuit on dielectric-slab 9, described phase shifter circuit comprises phase shift reference circuit A and phase shifter control circuit B, it is characterized in that: described phase shift reference circuit A comprises first group of coupled microstrip line 5, the first top tie point 11, first input end mouth 1 and the first output port 2, wherein: first group of coupled microstrip line 5 forms two microstrip lines that be arranged in parallel, one end of these two microstrip lines is connected to the first top tie point 11 jointly, the other end is connected respectively to first input end mouth 1 and the first output port 2, described phase shifter control circuit B comprises second group of coupled microstrip line 6, the 3rd group of coupled microstrip line 7, the second top tie point 12, end tie point 13, the second input port 3 and the second output port 4, wherein: second group of coupled microstrip line 6 forms two microstrip lines that be arranged in parallel, one end of these two microstrip lines is connected to the second top tie point 12 jointly, and the other end is connected respectively to the second input port 3 and the second output port 4, and the 3rd group of coupled microstrip line 7 form two microstrip lines that be arranged in parallel, one end of these two microstrip lines is connected to end tie point 13 jointly, and the other end is connected respectively to the second input port 3 and the second output port 4.
Wherein, in foregoing invention, wherein, the input signal of described first input end mouth 1 is as phase reference signal, the input signal of the second input port 3 is as phase control signal, and the phase difference value of the first output port 2 and the second output port 4 output signals is as the phase-shift phase of appointment.
Wherein, in foregoing invention, the front of described dielectric-slab 9 arranges described phase shifter circuit, and the back side arranges metal ground plane 10, this dielectric-slab 9 is also provided with the via hole 8 at passed through said front surface and the back side, and described via hole 8 is connected between the 3rd group of coupled microstrip line 7 and metal ground plane 10.
Wherein, in foregoing invention, first input end mouth 1 and the first output port 2 form microstrip line, extend to the edge of dielectric-slab 9 according to the mode substantially vertical with first group of coupled microstrip line 5, thereby form first input end mouth 1 and the first output port 2.
Wherein, in foregoing invention, the first top tie point 11 connects the gap, top of 5 of first group of coupled microstrip lines, the second top tie point 12 connects the gap, top of 6 of second group of coupled microstrip lines, end tie point 13 connects the tip gap of 7 of the 3rd group of coupled microstrip lines, the end decibel of second group of coupled microstrip line 6 is connected to the top of the 3rd group of coupled microstrip line 7, and by microstrip line, is connected to the second input port 3 and the second output port 4 respectively in described junction.
Wherein, in foregoing invention, the first top tie point 11, the second top tie point 12 are identical with the width of end tie point 13, and the distance between centers of tracks of first group of coupled microstrip line that length is connected separately with it respectively 5, first group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 is consistent.
Wherein, in foregoing invention, when described phase shifter circuit is under even mould energized condition, the even mould equivalent electric circuit of first group of coupled microstrip line 5 and second group of coupled microstrip line 6 is open-circuit condition, and the even mould equivalent electric circuit of the 3rd group of coupled microstrip line 7 is short-circuit condition; When described phase shifter circuit is under strange mould energized condition, the strange mould equivalent electric circuit of first group of coupled microstrip line 5, second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 is all short-circuit condition.
Wherein, in foregoing invention, the length of first group of coupled microstrip line 5 and first group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 is respectively L
1=28.67mm, L
2=19.8mm, L
3=19.88mm, width is respectively W
1=2.59mm, W
2=1.7mm, W
3=1.8mm, distance between centers of tracks is respectively S
1=0.63mm, S
2=1.8mm, S
3=0.56mm; Be connected to the micro belt line width W of first input end mouth 1 and the first output port 2
r=2.72mm, length L
r=10mm; Be connected to the micro belt line width W of the second input port 3 and the second output port 4
r=2.72mm, length L
r+ 0.83mm=10.83mm; The first top tie point 11 and the second top tie point 12 and end tie point 13 width C=0.4mm.
Wherein, in foregoing invention, each parameter of first group of coupled microstrip line 5 and first group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 meets following equation:
Z
0 2(Z
o2+Z
o3)(Z
e3tan
2θ
2-Z
e2)-Z
e2Z
e3Z
o2Z
o3tan
2θ
2＝0，
Z
0 2(Z
o1tan
2θ
1+Z
e1)-Z
e1Z
o1(Z
o1tan
2θ
1+Z
e1)＝0，
a＝Z
e2Z
e3，b＝Z
0(Z
e2cot(θ
2)-Z
e3tan(θ
2))，c＝Z
o2Z
o3tan(θ
2)，d＝Z
0(Z
o2+Z
o3)；
Wherein, θ
1be the electrical length of first group of coupled microstrip line 5, θ
2be the electrical length of second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7, Z
0for the characteristic impedance of first input end mouth 1 and the second input port 3 and the first output port 2 and the second output port 4, Z
e1, Z
o1be respectively strange modular character impedance and the even modular character impedance of first group of coupled microstrip line 5, Z
e2, Z
o2be respectively strange modular character impedance and the even modular character impedance of second group of coupled microstrip line 6, Z
e3, Z
o3be respectively strange modular character impedance and the even modular character impedance of the 3rd group of coupled microstrip line 7,
be the phase shift value of 1, the first output port 2 and first input end mouth, η is the phase shift value of 3 of the second output port 4 and the second input ports, and Δ σ is the phase shift value of broad-band phase shifter output appointment.
Wherein, in foregoing invention, each parameter of first group of coupled microstrip line 5, first group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 meets following condition:
Z
0＝50Ω，Δσ＝90°，θ
1＝131°，θ
2＝90°，
Z
e1＝59Ω，Z
o1＝42.4Ω，Z
e2＝70Ω，Z
o2＝60Ω，
Z
e3＝75Ω，Z
o3＝50Ω，
The central task frequency of coupling line broad-band phase shifter is f=2.2GHz.
The present invention, for the coupling line broad-band phase shifter of LTE system, has following beneficial effect: by using coupling microstrip structure to realize the phase shift value of appointment, widen bandwidth of operation; Circuit structure is simple, symmetrical, compact, practical, can in the working frequency range of LTE system, obtain more than 80% relative bandwidth, and stable phase shift value keeps less area simultaneously.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 has shown the three-dimensional structure schematic diagram of the coupling line phase shifter for LTE system of the embodiment of the present invention;
Fig. 2 has shown the electrical block diagram of phase shifter shown in Fig. 1;
Fig. 3 a has shown the equivalent circuit diagram of the coupling line phase shifter for LTE system of the preferred embodiment of the present invention;
Fig. 3 b has shown the equivalent circuit diagram of phase shifter shown in Fig. 3 a under even mould excitation;
Fig. 3 c has shown the equivalent circuit diagram of phase shifter shown in Fig. 3 a under strange mould excitation;
Fig. 4 has shown the return loss S of the coupling line phase shifter for LTE system of the embodiment of the present invention
11and S
33emulation and test S Parameter Map;
Fig. 5 has shown the insertion loss S of the coupling line phase shifter for LTE system of the embodiment of the present invention
21and S
43emulation and test S Parameter Map, and the phase difference of output port emulation and test.
Embodiment
For making the object, technical solutions and advantages of the present invention more cheer and bright, below in conjunction with embodiment and with reference to accompanying drawing, the present invention is described in more detail.Should be appreciated that, these descriptions are exemplary, and do not really want to limit the scope of the invention.In addition, in the following description, omitted the description to known configurations and technology, to avoid unnecessarily obscuring concept of the present invention.
Fig. 1 has shown the three-dimensional structure schematic diagram of the coupling line phase shifter for LTE system of the preferred embodiment of the present invention.
As shown in Figure 1, the coupling line broad-band phase shifter for LTE system of the preferred embodiment of the present invention, comprises dielectric-slab 9 and is laid in the phase shifter circuit on dielectric-slab 9.Described phase shifter circuit comprises phase shift reference circuit A and phase shifter control circuit B.
Referring to Fig. 1, described dielectric-slab 9 forms the tellite of phase shifter of the present invention, for carrying whole phase shifter circuit.In a specific embodiment of the present invention, the thickness of dielectric-slab 9 is set to 1mm, and dielectric constant is set to 2.65.Phase shifter circuit is arranged on the front of dielectric-slab 9, and the back side of dielectric-slab 9 is provided with metal ground plane 10.Further, dielectric-slab 9 is provided with the via hole 8 at passed through said front surface and the back side, and described via hole 8 is connected between the 3rd group of coupled microstrip line 7 and metal ground plane 10, to realize the ground connection of coupled microstrip line 7.As shown in Figure 1, via hole 8 is preferably arranged on coupled microstrip line 7 ends.
Referring to Fig. 1, phase shift reference circuit A comprises first group of coupled microstrip line 5, the first top tie point 11, first input end mouth 1 and the first output port 2.Wherein, first group of coupled microstrip line 5 forms two microstrip lines that be arranged in parallel, and the other end that one end of these two microstrip lines is connected to 11, two microstrip lines of the first top tie point is jointly connected respectively to first input end mouth 1 and the first output port 2.
As shown in Figure 1, first input end mouth 1 and the first output port 2 form microstrip line, extend to the edge of dielectric-slab 9 according to the mode substantially vertical with first group of coupled microstrip line 5, thereby form first input end mouth 1 and the first output port 2.As mentioned above, the first top tie point 11 is for connecting the gap, top of first group of coupled microstrip line 5.
Referring to Fig. 1, phase shifter control circuit B comprises second group of coupled microstrip line 6, the 3rd group of coupled microstrip line 7, the second top tie point 12, end tie point 13, the second input port 3 and the second output port 4.Wherein, second group of coupled microstrip line 6 forms two microstrip lines that be arranged in parallel, and one end of these two microstrip lines is connected to the second top tie point 12 jointly, and the other end is connected respectively to the second input port 3 and the second output port 4.The 3rd group of coupled microstrip line 7 forms two microstrip lines that be arranged in parallel, and one end of these two microstrip lines is connected to end tie point 13 jointly, and the other end is connected respectively to the second input port 3 and the second output port 4.As shown in the figure, the second input port 3 and the second output port 4 also form microstrip line, according to extending to the edge of dielectric-slab 9 with second group of coupled microstrip line 6 and the 3rd group of mode that coupled microstrip line 7 is substantially vertical, thereby form the second input port 3 and the second output port 4.
As shown in Figure 1, the second top tie point 12 is for connecting the gap, top of second group of coupled microstrip line 6, end tie point 13 is for connecting the tip gap of the 3rd group of coupled microstrip line 7, the end of second group of coupled microstrip line 6 is connected with the top of the 3rd group of coupled microstrip line 7, and by microstrip line, is connected to the second input port 3 and the second output port 4 respectively in junction.
In working band, described first input end mouth 1 for input signal as phase reference, described the second input port 3 for input signal as phase control, by the cooperation of described phase shifter reference circuit and phase shifter control circuit, the phase difference value of the first output port 2 and the second output port 4 output signals reaches according to different demands and default phase-shift phase, and concrete can be referring to following preferred specific embodiment.
As shown in Figure 1, the first group of coupled microstrip line 5 that forms phase shift reference circuit A is all positioned at same level with the second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 that form phase shifter control circuit B, arranges axisymmetricly in the front that is arranged on dielectric-slab 9.First input end mouth 1, the first output port 2, the second input port 3 and the second output port 4 are all arranged on the front of dielectric-slab 9 equally.
Fig. 2 has shown the electrical block diagram of phase shifter shown in Fig. 1.
As shown in Figure 2, the first group of coupled microstrip line 5 that forms phase shift reference circuit A is all positioned at same level with the second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 that form phase shifter control circuit B, arranges axisymmetricly.First input end mouth 1, the first output port 2, the second input port 3 and the second output port 4 are all arranged on the front of dielectric-slab 9.
As shown in Figure 2, in phase shift reference circuit A, the width of the first top tie point 11 is C, and length and the width of first group of coupled microstrip line 5 are respectively L
1and W
1, the distance between centers of tracks between two microstrip lines is S
1, the width that these two microstrip lines are connected to the microstrip line of first input end mouth 1 and the first output port 2 is W
r, length is L
r, in phase shifter control circuit B, the second top tie point 12 and the width of end tie point 13 and the width of the first top tie point 11 are all C mutually, and the length of second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 is respectively L
2and L
3, width is respectively W
2and W
3, the distance between centers of tracks in second group of coupled microstrip line 6 between two microstrip lines is S
2, the distance between centers of tracks in the 3rd group of coupled microstrip line 7 between two microstrip lines is S
3, form the width of first input end mouth 1, the first output port 2, the second input port 3 and the microstrip line of the second output port 4 identical and be W
r.For second group of coupled microstrip line 6 is connected with input/output port with the 3rd group of coupled microstrip line 7 simultaneously, preferably, make to form first input end mouth 1 that the Length Ratio of the microstrip line of the second input port 3 and the second output port 4 forms and the long 0.83mm of microstrip line length of the first output port 2, be L
r+ 0.83mm.
In a preferred embodiment of the present invention, its concrete size is as follows: W
r=2.72mm, W
1=2.59mm, W
2=1.7mm, W
3=1.8mm; S
1=0.63mm, S
2=1.8mm, S
3=0.56mm; L
1=28.67mm, L
2=19.8mm, L
3=19.88mm, L
r=10mm; C=0.4mm.
Fig. 3 a has shown the equivalent circuit diagram of the coupling line phase shifter for LTE system of the preferred embodiment of the present invention.
As shown in Figure 3 a, in the broad-band phase shifter equivalent circuit diagram of the preferred embodiment of the present invention, in phase shift reference circuit A, two microstrip lines of first group of coupled microstrip line 5 are connected to form the first parallel circuits by the first top tie point 11, and draw respectively first input end mouth 1 and the first output port 2, two microstrip lines of second group of coupled microstrip line 6 in phase shifter control circuit B are connected to form the second parallel circuits by the second top tie point 12, two microstrip lines of the 3rd group of coupled microstrip line 7 are connected to form the 3rd parallel circuits by end tie point 13, the second parallel circuits is connected with the 3rd parallel circuits, at the place of being connected in series, draw the second input port 3 and the second output port 4, in addition, end tie point 13 place's ground connection.
Fig. 3 b has shown the equivalent circuit diagram of phase shifter shown in Fig. 3 a under even mould excitation.
As shown in Figure 3 b, when phase shifter circuit of the present invention is under even mould energized condition, at two ports, apply the voltage source that size is identical and direction is identical, at this moment the second top tie point 12 does not have current flowing over the ground, the first output port 2 of coupled microstrip line, metal ground plane 10 and an electric capacity of dielectric-slab 9 common formations, now the even mould equivalent electric circuit of first group of coupled microstrip line 5 and second group of coupled microstrip line 6 is all open-circuit condition, and even modular character impedance is respectively Z
e1, Z
e2; The 3rd group of coupled microstrip line 7 is short-circuit condition, and even modular character impedance is Z
e3.
Fig. 3 c has shown the equivalent circuit diagram of phase shifter shown in Fig. 3 a under strange mould excitation.
As shown in Figure 3 c, when phase shifter circuit of the present invention is under strange mould energized condition, two ports apply the voltage source of opposite sign but equal magnitude, now the second top tie point 12 places are rendered as zero potential with respect to ground, can be considered as the direct ground connection of microstrip line, therefore the second top tie point 12 is in short-circuit condition.In addition, as shown in Figure 3 a, the 3rd group of coupled microstrip line 7 is initially set to ground state, is also short-circuit condition.As can be seen here, the strange mould equivalent electric circuit of first group of coupled microstrip line 5, second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 is all short-circuit condition, and strange modular character impedance is respectively Z
o1, Z
o2and Z
o3.
In equivalent electric circuit when wherein, strange mould excitation and even mould encourage, the value of each parameter meets following equation:
Z
0 2(Z
o1tan
2θ
1+Z
e1)-Z
e1Z
o1(Z
o1tan
2θ
1+Z
e1)＝0 (1)
Z
0 2(Z
o2+Z
o3)(Z
e3tan
2θ
2-Z
e2)-Z
e2Z
e3Z
o2Z
o3tan
2θ
2＝0 (2)
A=Z wherein
e2z
e3, b=Z
0(Z
e2cot (θ
2)-Z
e3tan (θ
2)), c=Z
o2z
o3tan (θ
2), d=Z
0(Z
o2+ Z
o3);
Wherein, θ
1be the electrical length of first group of coupled microstrip line 5, θ
2be the electrical length of second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7, Z
0for input port 1 and 3 and the characteristic impedance of output port 2 and 4, Z
e1, Z
o1for coupled microstrip line 5 characteristic impedance under even mould excitation and strange mould excitation respectively, Z
e2, Z
o2for the characteristic impedance under even mould excitation and strange mould excitation respectively of coupled microstrip line 6, Z
e3, Z
o3be the characteristic impedance under even mould excitation and strange mould excitation respectively of the 3rd group of coupled microstrip line 7,
be the phase shift value of 1, the first output port 2 and first input end mouth, η is the phase shift value of 3 of the second output port 4 and the second output ports, and Δ σ is the phase difference of broad-band phase shifter output appointment.
A specific embodiment of the present invention is described below.
In this specific embodiment of the present invention, work centre frequency is f=2.2GHz, first input end mouth 1, the second input port 3 with first and the characteristic impedance of output port 2, the second output port 4 be Z
0=50 Ω, the phase difference σ choosing is 90 °, the parameters that calculates circuit by equation (1), (2), (3), (4) and (5) is θ
1=131 °, θ
2=90 °, Z
e1=59 Ω, Z
o1=42.4 Ω, Z
e2=70 Ω, Z
o2=60 Ω, Z
e3=75 Ω, Z
o3=50 Ω, according to the dielectric constant of above-mentioned dielectric-slab, thickness, by transmission line software for calculation, draw following parameter (can referring to Fig. 2), the width W of the microstrip line of first input end mouth 1, the second input port 3 and the first output port 2, the second output port 4
r=2.72mm, the width of first group of coupled microstrip line 5 and second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 is respectively W
1=2.59mm, W
2=1.7mm, W
3=1.8mm, the distance between centers of tracks of first group of coupled microstrip line 5 and second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 is respectively S
1=0.63mm, S
2=1.8mm, S
3=0.56mm; The coupling microstrip line length obtaining by HFSS simulation optimization is respectively L
1=28.67mm, L
2=19.8mm, L
3=19.88mm, first group of coupled microstrip line 5 that the first top tie point 11, the second top tie point 12 and end tie point 13 length are connected separately with it and the distance between centers of tracks of second group of coupled microstrip line 6 and the 3rd group of coupled microstrip line 7 are consistent, and width all arranges C=0.4mm through HFSS optimization Simulation; The length of the microstrip line of first input end mouth 1, the second input port 3 and the first output port 2, the second output port 4 can be selected suitable value according to actual conditions, in order to weld and convenient test, reduces the wastage simultaneously, preferred, gets L
r=10mm.
Fig. 4 has shown the return loss S of the coupling line phase shifter for LTE system of the embodiment of the present invention
11and S
33emulation and test S Parameter Map.
Fig. 5 has shown the insertion loss S of the coupling line phase shifter for LTE system of the embodiment of the present invention
21and S
43emulation and test S Parameter Map, and the phase difference of output port emulation and test.
In resolution chart, S parameter, for describing the situation of transmission of signal between each port, is commonly used dB value representation.S
iithe reflection coefficient of looking to i port while referring to the load of all of the port matching connection, S
iibe less than-10dB represents that energy can pass through i port mostly, only has few energy to be reflected back i port, and transmissibility is high; S
ijwhile representing other port matching connection load, j port is to the transmission coefficient of i port, and first input end mouth 1, the first output port 2, the second input port 3, the second output port 4 refer to respectively port one, port 2, port 3 and port 4, S
ijexpression has lost how many to j port energy by i port in transmission, and lower expression device loss is lower, and performance is better.
As shown in Figure 4, Figure 5, electronic simulation result and test result frequency shift (FS) are within 200MHz, and the coupling line phase shifter for LTE system of preferred embodiment is operated in 1.34GHz to the broadband of 3.20GHz.Compare with desired result, the structure of emulation and actual measurement has skew slightly in working frequency points, but this coupling line phase shifter at the 1.34GHz of LTE system to 3.20GHz reflection coefficient S
11and S
33all-below 10dB, illustrate that its matching degree and isolation are good, can be in the transmission of avoiding keeping energy under the prerequisite of energy reflection, and in bandwidth of operation insertion loss S
21and S
43all be less than 0.5dB, power consumption is extremely low.
As shown in Figure 5, the phase difference between the first output port 2, the second output ports 4 is 90 ° ± 6.72 ° in double frequency-band, and phase difference is stable, and fluctuating range is little, and relative bandwidth can reach 80%, can realize purpose of design of the present invention.
As mentioned above, a kind of coupling line phase shifter for LTE system of the present invention, by using coupling microstrip structure to realize the phase shift value of appointment, widens bandwidth of operation; Circuit structure is simple, symmetrical, compact, practical, can in the working frequency range of LTE system, obtain more than 80% relative bandwidth, and stable phase shift value keeps less area simultaneously.
Should be understood that, above-mentioned embodiment of the present invention is only for exemplary illustration or explain principle of the present invention, and is not construed as limiting the invention.Therefore any modification of, making, be equal to replacement, improvement etc., within protection scope of the present invention all should be included in without departing from the spirit and scope of the present invention in the situation that.In addition, claims of the present invention are intended to contain whole variations and the modification in the equivalents that falls into claims scope and border or this scope and border.
Claims (10)
1. the coupling line broad-band phase shifter for LTE system, it comprises, dielectric-slab (9) and be laid in the phase shifter circuit on dielectric-slab (9), described phase shifter circuit comprises phase shift reference circuit (A) and phase shifter control circuit (B), it is characterized in that:
Described phase shift reference circuit (A) comprises first group of coupled microstrip line (5), the first top tie point (11), first input end mouth (1) and the first output port (2), wherein:
First group of coupled microstrip line (5) forms two microstrip lines that be arranged in parallel, one end of these two microstrip lines is connected to the first top tie point (11) jointly, and the other end is connected respectively to first input end mouth (1) and the first output port (2);
Described phase shifter control circuit (B) comprises second group of coupled microstrip line (6), the 3rd group of coupled microstrip line (7), the second top tie point (12), end tie point (13), the second input port (3) and the second output port (4), wherein:
Second group of coupled microstrip line (6) forms two microstrip lines that be arranged in parallel, one end of these two microstrip lines is connected to the second top tie point (12) jointly, and the other end is connected respectively to the second input port (3) and the second output port (4); And
The 3rd group of coupled microstrip line (7) forms two microstrip lines that be arranged in parallel, and one end of these two microstrip lines is connected to end tie point (13) jointly, and the other end is connected respectively to the second input port (3) and the second output port (4).
2. the coupling line broad-band phase shifter for LTE system according to claim 1, wherein, the input signal of described first input end mouth (1) is as phase reference signal, the input signal of the second input port (3) is as phase control signal, and the phase difference value of the first output port (2) and the second output port (4) output signal is as the phase-shift phase of appointment.
3. according to claim 1 for the coupling line broad-band phase shifter of LTE system, it is characterized in that, the front of described dielectric-slab (9) arranges described phase shifter circuit, the back side arranges metal ground plane (10), this dielectric-slab (9) is also provided with the via hole (8) at passed through said front surface and the back side, and described via hole (8) is connected between the 3rd group of coupled microstrip line (7) and metal ground plane (10).
4. the coupling line broad-band phase shifter for LTE system according to claim 2, it is characterized in that, first input end mouth (1) and the first output port (2) form microstrip line, according to the mode substantially vertical with first group of coupled microstrip line (5), extend to the edge of dielectric-slab (9), thereby form first input end mouth (1) and the first output port (2).
5. the coupling line broad-band phase shifter for LTE system according to claim 1, is characterized in that,
Described the first top tie point (11) connects the gap, top between first group of coupled microstrip line (5);
Described the second top tie point (12) connects the gap, top between second group of coupled microstrip line (6);
Described end tie point (13) connects the tip gap between the 3rd group of coupled microstrip line (7);
The end of described second group of coupled microstrip line (6) is connected respectively to the top of the 3rd group of coupled microstrip line (7), and by microstrip line, is connected to the second input port (3) and the second output port (4) respectively in described junction.
6. the coupling line broad-band phase shifter for LTE system according to claim 5, it is characterized in that, the first top tie point (11), the second top tie point (12) are identical with the width of end tie point (13), and the distance between centers of tracks of first group of coupled microstrip line (5) that length is connected separately with it respectively, first group of coupled microstrip line (6) and the 3rd group of coupled microstrip line (7) is consistent.
7. according to the coupling line broad-band phase shifter for LTE system described in any one in claim 1-6, it is characterized in that,
When described phase shifter circuit is under even mould energized condition, the even mould equivalent electric circuit of first group of coupled microstrip line (5) and second group of coupled microstrip line (6) is open-circuit condition, and the even mould equivalent electric circuit of the 3rd group of coupled microstrip line (7) is short-circuit condition; And
When described phase shifter circuit is under strange mould energized condition, the strange mould equivalent electric circuit of first group of coupled microstrip line (5), second group of coupled microstrip line (6) and the 3rd group of coupled microstrip line (7) is short-circuit condition.
8. according to the coupling line broad-band phase shifter for LTE system described in any one in claim 1-6, it is characterized in that,
The length of first group of coupled microstrip line (5) and first group of coupled microstrip line (6) and the 3rd group of coupled microstrip line (7) is respectively L
1=28.67mm, L
2=19.8mm, L
3=19.88mm, width is respectively W
1=2.59mm, W
2=1.7mm, W
3=1.8mm, distance between centers of tracks is respectively S
1=0.63mm, S
2=1.8mm, S
3=0.56mm;
Be connected to the micro belt line width W of first input end mouth (1) and the first output port (2)
r=2.72mm, length L
r=10mm;
Be connected to the micro belt line width W of the second input port (3) and the second output port (4)
r=2.72mm, length L
r+ 0.83mm=10.83mm;
The first top tie point (11) and the second top tie point (12) and end tie point (13) width C=0.4mm.
9. the coupling line broad-band phase shifter for LTE system according to claim 7, it is characterized in that, each parameter of first group of coupled microstrip line (5) and first group of coupled microstrip line (6) and the 3rd group of coupled microstrip line (7) meets following equation:
Z
0 2(Z
o1tan
2θ
1+Z
e1)-Z
e1Z
o1(Z
o1tan
2θ
1+Z
e1)＝0，
Z
0 2(Z
o2+Z
o3)(Z
e3tan
2θ
2-Z
e2)-Z
e2Z
e3Z
o2Z
o3tan
2θ
2＝0，
a＝Z
e2Z
e3，b＝Z
0(Z
e2cot(θ
2)-Z
e3tan(θ
2))，c＝Z
o2Z
o3tan(θ
2)，d＝Z
0(Z
o2+Z
o3)；
Wherein, θ
1be the electrical length of first group of coupled microstrip line (5), θ
2be the electrical length of second group of coupled microstrip line (6) and the 3rd group of coupled microstrip line (7), Z
0for the characteristic impedance of first input end mouth (1) and the second input port (3) and the first output port (2) and the second output port (4), Z
e1, Z
o1be respectively strange modular character impedance and the even modular character impedance of first group of coupled microstrip line (5), Z
e2, Z
o2be respectively strange modular character impedance and the even modular character impedance of second group of coupled microstrip line (6), Z
e3, Z
o3be respectively strange modular character impedance and the even modular character impedance of the 3rd group of coupled microstrip line (7),
be the phase shift value between the first output port (2) and first input end mouth (1), η is the phase shift value between the second output port (4) and the second input port (3), and Δ σ is the phase shift value of broad-band phase shifter output appointment.
10. the coupling line broad-band phase shifter for LTE system according to claim 9, it is characterized in that, each parameter of first group of coupled microstrip line (5), first group of coupled microstrip line (6) and the 3rd group of coupled microstrip line (7) meets following condition:
Z
0＝50Ω，Δσ＝90°，θ
1＝131°，θ
2＝90°，
Z
e1＝59Ω，Z
o1＝42.4Ω，Z
e2＝70Ω，Z
o2＝60Ω，
Z
e3＝75Ω，Z
o3＝50Ω，
The central task frequency of described coupling line broad-band phase shifter is f=2.2GHz.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105356014A (en) * | 2015-11-30 | 2016-02-24 | 中国科学院微电子研究所 | Microstrip switch type phase shifter and phase shifting module using same |
| WO2017091944A1 (en) * | 2015-11-30 | 2017-06-08 | 中国科学院微电子研究所 | Microstrip switch type phase shifter and phase shift module adopting same |
| CN110808438A (en) * | 2019-10-28 | 2020-02-18 | 常州安塔歌电子科技有限公司 | Miniaturized, low-cost 0/90 degree switch linear phase shifter |
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| US20040239447A1 (en) * | 2003-05-27 | 2004-12-02 | Soon-Young Eom | Broadband phase shifter using coupled lines and parallel open/short stubs |
| CN101202369A (en) * | 2007-12-11 | 2008-06-18 | 中国电子科技集团公司第五十五研究所 | Miniature MEMS switching line phase shifter |
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| US20040239447A1 (en) * | 2003-05-27 | 2004-12-02 | Soon-Young Eom | Broadband phase shifter using coupled lines and parallel open/short stubs |
| CN101202369A (en) * | 2007-12-11 | 2008-06-18 | 中国电子科技集团公司第五十五研究所 | Miniature MEMS switching line phase shifter |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105356014A (en) * | 2015-11-30 | 2016-02-24 | 中国科学院微电子研究所 | Microstrip switch type phase shifter and phase shifting module using same |
| WO2017091944A1 (en) * | 2015-11-30 | 2017-06-08 | 中国科学院微电子研究所 | Microstrip switch type phase shifter and phase shift module adopting same |
| CN105356014B (en) * | 2015-11-30 | 2018-05-08 | 中国科学院微电子研究所 | Microstrip switch type phase shifter and phase shifting module using same |
| CN110808438A (en) * | 2019-10-28 | 2020-02-18 | 常州安塔歌电子科技有限公司 | Miniaturized, low-cost 0/90 degree switch linear phase shifter |
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|---|---|
| CN104201441B (en) | 2017-02-15 |
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