CN105047759A - Method for reducing surface chromatic aberration of film silicon assembly - Google Patents
Method for reducing surface chromatic aberration of film silicon assembly Download PDFInfo
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- CN105047759A CN105047759A CN201510512884.3A CN201510512884A CN105047759A CN 105047759 A CN105047759 A CN 105047759A CN 201510512884 A CN201510512884 A CN 201510512884A CN 105047759 A CN105047759 A CN 105047759A
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- 230000004075 alteration Effects 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 24
- 239000010703 silicon Substances 0.000 title claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims description 41
- 239000010408 film Substances 0.000 claims description 28
- 238000007747 plating Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000001228 spectrum Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000005240 physical vapour deposition Methods 0.000 description 20
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 210000002763 pyramidal cell Anatomy 0.000 description 2
- 230000000638 stimulation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/60—Planning or developing urban green infrastructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method for reducing the surface chromatic aberration of a film silicon assembly, and belongs to the application field of the semiconductor film technology and building integrated photovoltaics (BIPV). The method achieves a purpose of charging the surface chromatic aberration of the film silicon assembly mainly through the processing of a front electrode, wherein the coating of a front electrode comprises the following steps: a, depositing a metal film, wherein the thickness of the metal film is greater than 0 nm and not greater than 10 nm; B, depositing a TCO film on the metal layer again through employing the technology of PVD, wherein the thickness of the TCO film is greater than 0 nm and not greater than 60 nm. Through the processing of the front electrode of a battery assembly, the method can improve the surface chromatic aberration remarkably, and the surface mean reflectivity of the surface of a processed sample is reduced. Moreover, the amplitude of interference fringes in a reflectivity spectrum is reduced, wherein the proportion is greatly improved when delta E is less than two, and can be greater than 80%. The method remarkably reduces the chromatic aberration, enables the chromatic aberration among sheets not to be apparent, and can be used for BIPV in a large-scale manner.
Description
Technical field
The present invention relates to a kind of method reducing thin film silicon assembly surface aberration, belong to SEMICONDUCTING THIN FILM TECHNOLOGY and BIPV (BIPV) application.
Background technology
Thin film silicon solar cell assembly can be used as architecture-integral photovoltaic (BIPV) product.In BIPV application, the color homogeneity (aberration) of assembly is a very important performance parameter.The uniformity of color understands the attractive in appearance of appreciable impact building, reduces assembly surface aberration and photovoltaic products can be made better to be attached in building.
The color effects that vision produces depends on the stimulation degree that the light that body surface reflects produces kind of the pyramidal cells of three in human eye.The stimulation respective function that the light of three kinds of pyramidal cells to different wave length λ produces is respectively R (λ), G (λ), B (λ).When the body surface reflectance spectrum that human eye receives is S (λ), this object the color cashing out be (R, G, B)
When regulating the spectrum of surface reflection, the color relation that object shows can change.
At same assembly surface, due to process technology limit, the thickness of rete itself has certain inhomogeneities.The thicknesses of layers that can go out with this position from the spectrum S (λ) of diverse location reflection changes and changes, and apparent color is changed, cashes as aberration.
Color showing method general is in the world in accordance with CIELAB system, and it is a uniform color space, and often kind of color is expressed as (L*, a
*, b
*), wherein L* display is the intensity of light, a
*represent red/green degree, b
*represent yellow/blue degree.(L*, a
*, b
*) obtained by linear transformation by (R, G, B) value.For being consistent with general international standard, color measuring hereinafter used and aberration characterize and all use CIELAB method.
General Δ E passes judgment on look extent, and Δ E represents aberration comprehensive deviation amount, and numerical value equals L, a
*, b
*quadratic sum evolution again.
Δ E is less, and to represent aberration less, and national standard requires that, in BIPV, point is less than 3 with the value of chromatism Δ E of point.Under equal conditions, when object color is dimmed, surface chromatic aberration is less.
Application number is " 201110366694.7 ", denomination of invention is " preparation method of thin film solar cell high-conductivity front electrode ", disclose one and deposit depositing ultrathin metallic diaphragm on TCO rete on the glass substrate, reach and contact with solar battery structure layer good ohmic, the object conducted electricity very well.This invention is to provide a kind of preparation method that can improve the thin-film solar cells high-conductivity front electrode of battery conversion efficiency.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method reducing thin film silicon assembly surface aberration, and the object of the method reduces assembly surface aberration by electrode before process electro-conductive glass.
Reduce a method for thin film silicon assembly surface aberration, comprise first plated film on the front electrode, then plate amorphous silicon film battery, the step of last plating back electrode, wherein, plated film comprises the following steps on the front electrode:
A, depositing metal films: on the front electrode, depositing metal membrane layer; Wherein, 0nm < metallic diaphragm≤10nm;
B, depositing TCO films: with argon gas bombardment AZO target, under the influence of a magnetic field, on the metal level that AZO target is prepared in a step, deposition forms TCO thin film; Wherein, 0nm < TCO thin film≤60nm.
AZO target described above is the zinc oxide transparent conducting film of aluminium doping.
A kind of method reducing thin film silicon assembly surface aberration described above, the material of metal level described in a step is the one in Cu, Ag, Al, Ta, Ni, Cr, NiCr.
Further, the material of metal level described in a step is preferably the higher Ag of transmitance, and also has excellent conductive characteristic due to ag material, can not impact the collection of charge carrier and transporting in rete.
Wherein, acting as of super thin metal silver layer absorbs a certain amount of visible ray, reduces reflection, just can absorb a certain amount of visible ray when its thickness is 0 ~ 10nm, reduce reflection, although the silver layer of thickness G reatT.GreaT.GT 10nm can the significant reflectivity increasing surface.But, if metal level is too thick can stop that too many visible ray enters in battery, affects battery to the absorption of light and affect the generating efficiency of battery.
A kind of method reducing thin film silicon assembly surface aberration described above, TCO thin film described in b step is preferably AZO film, and wherein, in AZO film target, the doping content of aluminium is 0.5 ~ 1.5%.
Wherein, TCO thin film is transparent conductive oxide film, preferably be prepared from by the magnetron sputtering technique in PVD (physical vapour deposition (PVD)) technology by AZO (zinc oxide that aluminium adulterates) layer, its process is argon gas bombardment AZO target, under the influence of a magnetic field, AZO deposits gradually and forms conductive oxide rete on the metal layer.The dielectric constant of AZO, between its media of both sides, can regulate by the thickness changing AZO layer the light transmission capacity entering into battery obsorbing layer.
Further, as preferred technical scheme, a kind of method reducing thin film silicon assembly surface aberration described above is on the front electrode, the Ag thin layer thick with the method for physical vapour deposition (PVD) plating 3nm and the thick TCO thin film layer of 60nm.
Or as preferred technical scheme, a kind of method reducing thin film silicon assembly surface aberration described above is on the front electrode, the Ag thin layer thick with the method for physical vapour deposition (PVD) plating 5nm and the thick TCO thin film layer of 60nm.
A kind of method reducing thin film silicon assembly surface aberration of the present invention, after electrode before treatment of battery assembly, surface chromatic aberration can be improved significantly, the ratio of its △ E < 2 significantly promotes, and can reach more than 80%; Aberration obviously reduces, and between sheet and sheet, aberration is not obvious, large area can be used for BIPV; Sample surfaces average reflectance after process reduces, and the interference fringe amplitude in reflectivity spectral reduces, and is conducive to reducing aberration.When Ag thicknesses of layers is fixed, the corresponding aberration of assembly is reduced to △ E < 2 (3nmAg+60nmAZO) and △ E < 1.5 (5nmAg+60nmAZO) respectively from △ E > 3.
Figure of description
Fig. 1 aberration modular construction and schematic surface;
The assembly surface reflectivity spectral of the premenstrual Electrode treatment of Fig. 2 and untreated (comparative sample);
Fig. 3 assembly surface average reflectance (visible light wave range 380nm ~ 780nm) is with the variation tendency of different thicknesses of layers.
Embodiment
Reduce a method for thin film silicon assembly surface aberration, comprise first plated film on the front electrode, then plate amorphous silicon film battery, the step of last plating back electrode, wherein, plated film comprises the following steps on the front electrode:
A, depositing metal films: on the front electrode, depositing metal membrane layer; Wherein, 0nm < metallic diaphragm≤10nm;
B, depositing TCO films: with argon gas bombardment AZO target, under the influence of a magnetic field, on the metal level that AZO target is prepared in a step, deposition forms TCO thin film; Wherein, 0nm < TCO thin film≤60nm.
Described AZO target is the zinc oxide transparent conducting film of aluminium doping.
A kind of method reducing thin film silicon assembly surface aberration described above, the material of metal level described in a step is Cu, Ag, Al, Ta, Ni, Cr or NiCr.
Further, the material of metal level described in a step is preferably the higher Ag of transmitance, and also has excellent conductive characteristic due to ag material, can not impact the collection of charge carrier and transporting in rete.
Wherein, acting as of super thin metal silver layer absorbs a certain amount of visible ray, reduces reflection, just can absorb a certain amount of visible ray when its thickness is 0 ~ 10nm, reduce reflection, although the silver layer of thickness G reatT.GreaT.GT 10nm can the significant reflectivity increasing surface.But, if metal level is too thick can stop that too many visible ray enters in battery, affects battery to the absorption of light and affect the generating efficiency of battery.
A kind of method reducing thin film silicon assembly surface aberration described above, TCO thin film described in b step is preferably AZO film, and wherein, in AZO film target, the doping content of aluminium is 0.5 ~ 1.5%.
Wherein, TCO thin film is transparent conductive oxide film, preferably be prepared from by the magnetron sputtering technique in PVD (physical vapour deposition (PVD)) technology by AZO (zinc oxide that aluminium adulterates) layer, its process is argon gas bombardment AZO target, under the influence of a magnetic field, AZO deposits gradually and forms conductive oxide rete on the metal layer.The dielectric constant of AZO, between its media of both sides, can regulate by the thickness changing AZO layer the light transmission capacity entering into battery obsorbing layer.
Further, as preferred technical scheme, a kind of method reducing thin film silicon assembly surface aberration described above is on the front electrode, the Ag thin layer thick with the method for physical vapour deposition (PVD) plating 3nm and the thick TCO thin film layer of 60nm.
Or as preferred technical scheme, a kind of method reducing thin film silicon assembly surface aberration described above is on the front electrode, the Ag thin layer thick with the method for physical vapour deposition (PVD) plating 5nm and the thick TCO thin film layer of 60nm.
Below in conjunction with embodiment, the specific embodiment of the present invention is further described, does not therefore limit the present invention among described scope of embodiments.
Embodiment 1
On the front electrode, with method plating Ag layer and the AZO conductive oxide film layer of physical vapour deposition (PVD), then plate amorphous silicon film battery by the method for chemical vapour deposition (CVD), finally with the method plating layer of metal back electrode of physical vapour deposition (PVD).
Comparative sample is only on the front electrode with the method plating amorphous silicon film battery of chemical vapour deposition (CVD), then plates layer of metal back electrode by the method for physical vapour deposition (PVD).
Wherein, the thickness of Ag layer and AZO conductive oxide film layer is selected as shown in table 1 below:
The assembly rete experiment of the premenstrual Electrode treatment of table 1 and untreated (comparative sample)
| Numbering | Metallic film layer thickness (/nm) | TCO thin film layer thickness (/nm) | Value of chromatism (△ E) |
| 1 | 3 | 60 | 1.9 |
| 2 | 5 | 60 | 1.5 |
| 3 | 8 | 30 | 1 |
| 4 | 10 | 10 | 1.2 |
| 5 | 1 | 50 | 1.6 |
| 6 | 0 | 0 | 3.7 |
From table 1, the assembly thicknesses of layers experiment of premenstrual Electrode treatment and untreated (comparative sample) can obtain:
1, in embodiment 1 in numbering 1 ~ 5 group be deposition duplicature after electro-conductive glass substrate on prepare amorphous silicon/amorphous silicon germanium unijunction or multijunction cell; Numbering 6 groups is that contrast is produced on the suprabasil assembly of undressed electro-conductive glass, and surface chromatic aberration can improve.Fig. 1 is aberration modular construction and schematic surface.
2, find through △ E colour difference assessment method, without the assembly of front Electrode treatment, the ratio of △ E < 2 is very little, is generally less than 10%.Based on the basis with a collection of glass and technique, through the assembly of front Electrode treatment, the ratio of △ E < 2 significantly promotes, and can reach 80%.
3, the assembly aberration without front Electrode treatment is obvious, has significantly colour inhomogeneous between sheet and sheet.Through the assembly of front Electrode treatment, aberration obviously reduces, and between sheet and sheet, aberration is not obvious, large area can be used for BIPV.
4, the undressed assembly of electrode before contrast, the sample surfaces average reflectance after process reduces, and the interference fringe amplitude in reflectivity spectral reduces.Interference fringe derives from the inhomogeneities of rete, and to wavelength sensitive.When interference fringe is strong, aberration is relatively obvious.Interference fringe amplitude in the assembly surface reflectivity spectral processed reduces, and is conducive to reducing aberration.Its result as shown in Figure 2.
5, assembly surface average reflectance (visible light wave range 380nm ~ 780nm) with the variation tendency of different thicknesses of layers is: the corresponding aberration of assembly is reduced to △ E < 2 (3nmAg+60nmAZO) and △ E < 1.5 (5nmAg+60nmAZO) respectively from △ E > 3.Its result as shown in Figure 3.
Claims (6)
1. reduce a method for thin film silicon assembly surface aberration, comprise first plated film on the front electrode, then plate amorphous silicon film battery, the step of last plating back electrode, is characterized in that: plated film comprises the following steps on the front electrode:
A, depositing metal films: on the front electrode, depositing metal membrane layer; Wherein, 0nm < metallic diaphragm≤10nm;
B, depositing TCO films: with argon gas bombardment AZO target, under the influence of a magnetic field, on the metal level that AZO target is prepared in a step, deposition forms TCO thin film; Wherein, 0nm < TCO thin film≤60nm.
2. a kind of method reducing thin film silicon assembly surface aberration according to claim 1, is characterized in that: the material of metal level described in a step is a kind of in Cu, Ag, Al, Ta, Ni, Cr, NiCr.
3. a kind of method reducing thin film silicon assembly surface aberration according to claim 2, is characterized in that: the material of metal level described in a step is Ag.
4. a kind of method reducing thin film silicon assembly surface aberration according to claim 1, is characterized in that: in the target of AZO described in b step, the doping content of aluminium is 0.5 ~ 1.5%.
5. a kind of method reducing thin film silicon assembly surface aberration according to any one of Claims 1 to 4, is characterized in that: on the front electrode, with the physical vaporous deposition thick Ag thin layer of plating 3nm and the thick TCO thin film layer of 60nm.
6. a kind of method reducing thin film silicon assembly surface aberration according to any one of Claims 1 to 4, is characterized in that: on the front electrode, with the physical vaporous deposition thick Ag thin layer of plating 5nm and the thick TCO thin film layer of 60nm.
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|---|---|---|---|
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| CN201510512884.3A CN105047759A (en) | 2015-08-20 | 2015-08-20 | Method for reducing surface chromatic aberration of film silicon assembly |
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|---|---|---|---|---|
| CN110305602A (en) * | 2018-03-27 | 2019-10-08 | 拓自达电线株式会社 | Electrically conductive adhesive layer carrier film and adhesive film including the electrically conductive adhesive layer carrier film |
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|---|---|---|---|---|
| CN110305602A (en) * | 2018-03-27 | 2019-10-08 | 拓自达电线株式会社 | Electrically conductive adhesive layer carrier film and adhesive film including the electrically conductive adhesive layer carrier film |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151111 |