CN105047745A - Reflecting coating used for photovoltaic assembly backboard heat dissipation, preparation technology and application thereof - Google Patents

Reflecting coating used for photovoltaic assembly backboard heat dissipation, preparation technology and application thereof Download PDF

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Publication number
CN105047745A
CN105047745A CN201510343591.7A CN201510343591A CN105047745A CN 105047745 A CN105047745 A CN 105047745A CN 201510343591 A CN201510343591 A CN 201510343591A CN 105047745 A CN105047745 A CN 105047745A
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CN
China
Prior art keywords
reflective coating
heat radiation
back plate
plate heat
photovoltaic
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Pending
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CN201510343591.7A
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Chinese (zh)
Inventor
崔金
戴开瑛
张治军
许�鹏
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HUNAN NANFANG BOYUN NEW MATERIAL CO Ltd
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HUNAN NANFANG BOYUN NEW MATERIAL CO Ltd
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Priority to CN201510343591.7A priority Critical patent/CN105047745A/en
Publication of CN105047745A publication Critical patent/CN105047745A/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/004—Reflecting paints; Signal paints
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

A reflecting coating used for photovoltaic assembly backboard heat dissipation, a preparation technology and an application thereof are disclosed. The infrared ray reflecting coating comprises, by weight, 5-80% of an infrared-ray reflective powder material, 10-50% of a binder and 10-80% of a solvent. The infrared-ray reflective powder material is formed by one of or a mixture of more than two of TiO2, Al2O3, Cr2O3, ZnO, ZrO2 and SiO2. The invention also discloses a preparation technology of the infrared ray reflecting coating of the photovoltaic assembly backboard heat dissipation. The reflecting coating in the invention is coated on a surface of the photovoltaic assembly backboard so that a working temperature of a photovoltaic assembly can be reduced 3-4 degrees; output power of the photovoltaic assembly is increased and power generation cost is reduced.

Description

For reflective coating and preparation technology and the application of photovoltaic component back plate heat radiation
Technical field
The present invention relates to a kind of reflective coating for photovoltaic component back plate heat radiation, especially relate to a kind of infrared reflecting paint for photovoltaic component back plate heat radiation and preparation technology and application.
Background technology
Photovoltaic generation is a kind of new forms of energy, solar energy can be transformed into electric energy by photovoltaic effect, generally speaking, continental rise photovoltaic generation is according to different electricity generation material, its conversion efficiency is at 10-30%, mean that remaining solar energy will be transformed into other forms such as heat energy and lose, therefore, the conversion efficiency improving constantly photovoltaic module is the direction of theCourse of PV Industry.
Photovoltaic generation is since extensive use, and there has been the use scale of up to a hundred GW in the whole world, from independent family electricity generation system, centralized village electric power system, mixing or complementary power generation system, arrives grid-connected system etc., fairly large commercial applications of marching toward.Photovoltaic generating system in actual applications, under being generally in higher solar radiation, its power generation performance is comparatively large by the impact of natural environmental condition, and wherein system critical piece---the working temperature of solar module is one of key factor affecting photovoltaic generating system performance.Solar energy power generating core cell is solar cell, drops into the mainly silicon system solar cell of large-scale commercial application at present: monocrystaline silicon solar cell, polysilicon solar cell and non-crystal silicon solar cell.
Crystal silicon solar batteries assembly, usually by glass, cell piece string and backboard, is formed by EVA adhesive film encapsulation.Solar cell backboard is a kind of protectiveness component be used on solar module, and protection cell piece string 25 years and even longer time under various climatic environment can normally work.
The emission spectrum distribution of sunlight is wider, from ultraviolet to visible ray, and infrared ray all has, its middle infrared (Mid-IR) account for more than 45% of solar spectrum, and namely in solar energy, the energy of 45% concentrates on infrared line segment, and due to the restriction of the band structure of crystal silicon material own, crystal silicon battery only can absorb solar energy medium ultraviolet and some visible light scope, infrared ray is then absorbed by the miscellaneous part of assembly, is transformed into heat energy, and therefore the working temperature of assembly raises rapidly.
Temperature, on the impact of silicon solar cell, is mainly reflected in the parameter variation with temperature such as the open circuit voltage of solar cell, short circuit current, peak power and changes.The open circuit voltage of monomer solar cell reduces with the rising of temperature, and voltage temperature coefficient is-(2.0 ~ 2.2) mv/ DEG C, and namely temperature often raises 1 DEG C, and monomer solar cell open circuit voltage reduces by 2.0 ~ 2.2mv; Solar cell short circuit current raises with temperature and raises; The peak power of solar cell reduces with the rising of temperature (directly having influence on efficiency), namely temperature often raises 1 DEG C, the peak power loss late of solar cell is about 0.35 ~ 0.45%, such as: the silicon solar cell being operated in 20 DEG C, its power output is than the high 17.5-22.5% being operated in 70 DEG C.Monolithic solar module is composed in series by 60 or 72 monomer solar cells usually.According to the result at China's Ningxia, China field survey, solar module back surface temperatures as high 70 DEG C during summer, and solar cell working junction temperature now can reach 100 DEG C (nominal parameter is demarcated all under 25 DEG C of conditions).
Under silicon solar cell is operated in the higher situation of temperature, open circuit voltage declines to a great extent with the rising of temperature, causes the serious skew of charging working point simultaneously, easily makes system undercharge and damage; The power output of silicon solar cell also declines to a great extent with the rising of temperature, causes solar module can not give full play to maximum performance.Existing assembly is by sheet glass, EVA, cell piece, EVA, backboard is lamination successively, then lamination, not specific heat abstractor, the amount of heat absorbed in environment for use is out of doors difficult to scatter and disappear rapidly and accumulate, cause open circuit voltage to decline to a great extent with the rising of temperature, cause the serious skew of charging working point simultaneously, easily make system undercharge and damage; The power output of silicon solar cell also declines to a great extent with the rising of temperature, causes solar module not give full play to maximum efficiency.
Although to the heat dissipation problem at the photovoltaic electrification component back side and the heat dissipation problem of traditional silicon device, there is no substantive difference, and the technological means solving conventional electronics heat dissipation problem is quite ripe, but, because photovoltaic generation needs the solution of low-cost long-life, and back veneer material modification main at present, cost is still higher comparatively speaking, therefore, a kind of heat sink material solution of low cost is badly in need of.In addition, because back veneer material is macromolecule resin, although people are while effort keeps back veneer material insulation property, make great efforts to improve its capacity of heat transmission, but due to the restriction of organic resin itself, heat loss through conduction and the heat loss through radiation ability of backboard are still poor, effectively cannot dispel the heat under strong solar radiation, thus reduce the power generation performance of assembly.
Summary of the invention
Technical problem to be solved by this invention is, overcome the above-mentioned defect that prior art exists, there is provided a kind of cost low, effectively can reduce the working temperature of photovoltaic component back plate, improve the power output of photovoltaic module, reduce the reflective coating for photovoltaic component back plate heat radiation of assembly cost of electricity-generating and preparation technology thereof and application process.
The technical solution adopted for the present invention to solve the technical problems is:
The reflective coating for photovoltaic component back plate heat radiation of the present invention, be made up of the raw material of following percentage by weight: the preferred 30-50% of infrared reflection dusty material 5-80%(), the preferred 30-50% of binding agent 10-50%(), the preferred 50-60% of organic solvent 10-80%().
Further, described infrared reflection dusty material is by TiO 2, Al 2o 3, Cr 2o 3, ZnO, ZrO 2, SiO 2in one or more mixture composition.
Further, described binding agent PMMA (polymethyl methacrylate), PC (Merlon), PVC(polyvinyl chloride) in one.
Further, described organic solvent is absolute alcohol (absolute ethyl alcohol) or acetone.
Further, the granularity of described infrared reflection dusty material is 0.01 μm-500 μm.
The preparation technology of the reflective coating of the photovoltaic component back plate heat radiation of the present invention, comprises the following steps: take described infrared reflection dusty material, binding agent, solvent by described percentage by weight, stir.
The described application of reflective coating in photovoltaic module manufactures for photovoltaic component back plate heat radiation: (1) is to packaged photovoltaic module, or assembly semi-finished product, purges the back side of clean described photovoltaic module or assembly semi-finished product backboard; (2) infrared reflecting paint of backboard heat radiation of the present invention is all applied to the backboard back side after step (1) process, coating thickness 5 ~ 200 μm; (3) assembly after step (2) process is placed 0.5-2h, spontaneous curing at ambient temperature, or be placed in baking oven, after being warming up to 40 ~ 80 DEG C, afterheat baking 0.5-2h, solidifies completely, gets product.
Compared with prior art, the present invention has the following advantages:
(1) reflective coating of the present invention, strong to the infrared-reflecting power in sunlight, at the reflective coating of photovoltaic component back plate surface-coated the present invention, the working temperature 3-4 DEG C of photovoltaic module can be reduced, improve the power output 1.0-1.8% of assembly, reduce photovoltaic generation cost;
(2) product of the present invention, manufacture easy, cost is low, is suitable for producing in enormous quantities, and scale is applied.
Embodiment
Below in conjunction with embodiment, the invention will be further described.
Embodiment 1
The reflective coating for photovoltaic component back plate heat radiation of the present embodiment, is made up of the raw material of following percentage by weight: infrared reflection dusty material 5%, binding agent 15%, organic solvent 80%; Described infrared reflection dusty material is TiO 2powder (particle mean size is 0.01 μm); Binding agent is PMMA; Organic solvent is anhydrous industrial alcohol.
Preparation: take described infrared reflection dusty material TiO by described percentage by weight 2powder, binding agent PMMA, solvent alcohol, stir.
Application: (1), to packaged photovoltaic module, purges its backboard back side clean; (2) described the present embodiment reflective coating is all applied to the backboard back side after step (1) process, coating thickness 5 μm; (3) assembly after step (2) process is placed 2h, spontaneous curing at ambient temperature, get product.
Compared with the photovoltaic module of the uncoated reflective coating of the present invention in the backboard back side, backboard backside coating has the photovoltaic module of infrared reflecting paint of the present invention, and time in working order, backboard mean temperature reduces by 3 DEG C, and power output improves 1%.
Embodiment 2
The reflective coating of the photovoltaic component back plate heat radiation of the present embodiment, is made up of the raw material of following percentage by weight: infrared reflection dusty material 80%, binding agent 10%, organic solvent 10%; Described infrared reflection dusty material is Al 2o 3and Cr 2o 3mixed powder (particle mean size is 500 μm); Binding agent is PC; Organic solvent is acetone.
Preparation: take described Al by described percentage by weight 2o 3and Cr 2o 3mixed powder (Al 2o 3account for 50%, Cr of mixed powder weight 2o 3account for 50% of mixed powder weight), binding agent PC, organic solvent-acetone, stir.
Application: (1), to packaged photovoltaic module, purges its backboard back side clean; (2) described the present embodiment reflective coating is all applied to the backboard back side after step (1) process, coating thickness 200 μm; (3) assembly after step (2) process is positioned in baking oven and is toasted, after being warming up to 80 DEG C, afterheat baking 0.5h, solidification gets product completely.
Compared with the photovoltaic module of the uncoated reflective coating of the present invention in the backboard back side, backboard backside coating has the photovoltaic module of reflective coating of the present invention, and time in working order, backboard mean temperature reduces by 3.5 DEG C, and power output improves 1.6%.
Embodiment 3
The reflective coating of the photovoltaic component back plate heat radiation of the present embodiment, is made up of the raw material of following percentage by weight: infrared reflection dusty material 40%, binding agent 40%, solvent 20%; Described infrared reflection dusty material is ZnO, ZrO 2and SiO 2mixed powder (particle mean size is 400 μm); Binding agent is PVC; Organic solvent is acetone.
Preparation: take described ZnO, ZrO by described percentage by weight 2and SiO 2(ZnO accounts for 30%, ZrO of mixed powder weight to mixed powder 2account for 40%, SiO of mixed powder weight 2account for 30% of mixed powder weight), binding agent PVC, solvent acetone, stir.
Application: (1), to packaged photovoltaic module, purges its backboard back side clean; (2) described the present embodiment reflective coating is all applied to the backboard back side after step (1) process, coating thickness 100 μm; (3) assembly after step (2) process is positioned in baking oven and is toasted, after being warming up to 40 DEG C, afterheat baking 2h, solidifies completely, gets product.
Compared with the photovoltaic module of the uncoated reflective coating of the present invention in the backboard back side, backboard backside coating has the photovoltaic module of reflective coating of the present invention, and time in working order, backboard mean temperature reduces by 4 DEG C, and power output improves 1.8%.
Embodiment 4
The reflective coating of the photovoltaic component back plate heat radiation of the present embodiment, is made up of the raw material of following percentage by weight: infrared reflection dusty material 30%, binding agent 50%, solvent 20%; Described infrared reflection dusty material is TiO 2and ZrO 2mixed powder (particle mean size is 0.1 μm); Binding agent is PC; Organic solvent is anhydrous industrial alcohol.
Preparation: take described TiO by described percentage by weight 2and ZrO 2mixed powder (TiO 2account for 70%, ZrO of mixed powder weight 2account for 30% of mixed powder weight), binding agent PC, solvent alcohol, stir.
Application: (1), to packaged photovoltaic module, purges the clean backboard back side; (2) described the present embodiment reflective coating is all applied to the backboard back side after step (1) process, coating thickness 150 μm; (3) assembly after step (2) process is positioned in baking oven and is toasted, after being warming up to 60 DEG C, afterheat baking 1.5h, solidifies completely, gets product.
Compared with the photovoltaic module of the uncoated reflective coating of the present invention in the backboard back side, backboard backside coating has the photovoltaic module of reflective coating of the present invention, and time in working order, backboard mean temperature reduces by 3.8 DEG C, and power output improves 1.7%.
Embodiment 5
The reflective coating of the photovoltaic component back plate heat radiation of the present embodiment, is made up of the raw material of following percentage by weight: infrared reflection dusty material 50%, binding agent 30%, organic solvent 20%; Described infrared reflection dusty material is ZrO 2powder (particle mean size is 0.5 μm); Binding agent is PMMA; Organic solvent is absolute ethyl alcohol.
Preparation: take described infrared reflection dusty material ZrO by described percentage by weight 2powder, binding agent PMMA, organic solvent are absolute alcohol, stir.
Application: (1), to packaged photovoltaic module, purges the clean backboard back side; (2) described the present embodiment reflective coating is all applied to the backboard back side after step (1) process, coating thickness 120 μm; (3) assembly after step (2) process is placed 0.5h, spontaneous curing at ambient temperature, get product.
Compared with the photovoltaic module of the uncoated reflective coating of the present invention in the backboard back side, backboard backside coating has the photovoltaic module of reflective coating of the present invention, and time in working order, backboard mean temperature reduces by 4 DEG C, and power output improves 1.8%.
Embodiment 6
The reflective coating of the photovoltaic component back plate heat radiation of the present embodiment, is made up of the raw material of following percentage by weight: infrared reflection dusty material 30%, binding agent 20%, organic solvent 50%; Described infrared reflection dusty material is ZnO powder (particle mean size is 1 μm); Binding agent is PVC; Organic solvent is acetone.
Preparation: take described infrared reflection dusty material ZnO powder, binding agent PVC, solvent acetone by described percentage by weight, stir.
Application: (1), to packaged photovoltaic module, purges the clean backboard back side; (2) described the present embodiment reflective coating is all applied to the backboard back side after step (1) process, coating thickness 80 μm; (3) assembly after step (2) process is placed 1.5h, spontaneous curing at ambient temperature, get product.
Compared with the photovoltaic module of the uncoated reflective coating of the present invention in the backboard back side, backboard backside coating has the photovoltaic module of reflective coating of the present invention, and time in working order, backboard mean temperature reduces by 3.9 DEG C, and power output improves 1.7%.
Embodiment 7
The reflective coating of the photovoltaic component back plate heat radiation of the present embodiment, is made up of the raw material of following percentage by weight: infrared reflection dusty material 10%, binding agent 30%, organic solvent 60%; Described infrared reflection dusty material is Al 2o 3powder (particle mean size is 300 μm); Binding agent is PC; Organic solvent is acetone.
Preparation: take described reflecting powder material Al by described percentage by weight 2o 3powder, binding agent PC, solvent acetone, stir.
Application: (1), to packaged photovoltaic module, purges its backboard back side clean; (2) described the present embodiment reflective coating is all applied to the backboard back side after step (1) process, coating thickness 60 μm; (3) assembly after step (2) process is positioned in baking oven and is toasted, after being warming up to 70 DEG C, afterheat baking 1.5h, gets product.
Compared with the photovoltaic module of the uncoated reflective coating of the present invention in the backboard back side, backboard backside coating has the photovoltaic module of reflective coating of the present invention, and time in working order, backboard mean temperature reduces by 4 DEG C, and power output improves 1.8%.
The above, be only preferred embodiment of the present invention, be not construed as limiting the scope of the present invention.Every above embodiment is done according to the technology of the present invention essence any amendment, change and equivalent transformation, all still belong to the protection range of technical solution of the present invention.

Claims (10)

1., for the reflective coating of photovoltaic component back plate heat radiation, it is characterized in that, be made up of the raw material of following percentage by weight: infrared reflection dusty material 5-80%, binding agent 10-50%, organic solvent 10-80%.
2. as claimed in claim 1 for the reflective coating of photovoltaic component back plate heat radiation, it is characterized in that, the percentage by weight of described infrared reflection dusty material is 30-50%, and the percentage by weight of described binding agent is 30-50%, and the percentage by weight of described solvent is 50-60%.
3., as claimed in claim 1 or 2 for the reflective coating of photovoltaic component back plate heat radiation, it is characterized in that, described infrared reflection dusty material is by TiO 2, Al 2o 3, Cr 2o 3, ZnO, ZrO 2, SiO 2in one or more mixture composition.
4. as described in one of claim 1-3 for photovoltaic component back plate heat radiation reflective coating, it is characterized in that, described binding agent is PMMA, PC or PVC.
5. as described in one of claim 1-4 for photovoltaic component back plate heat radiation reflective coating, it is characterized in that, described organic solvent is alcohol or acetone.
6. as described in one of claim 1-5 for photovoltaic component back plate heat radiation reflective coating, it is characterized in that, the granularity of described infrared reflection dusty material is 0.01 μm-500 μm.
7., as claimed in claim 1 or 2 for a preparation technology for the reflective coating of photovoltaic component back plate heat radiation, it is characterized in that, take described infrared reflection dusty material, binding agent, solvent by described percentage by weight, stir.
8. as described in one of claim 1-6 for photovoltaic component back plate heat radiation reflective coating photovoltaic module manufacture in application.
9., as claimed in claim 8 for the application of reflective coating in photovoltaic module manufactures of photovoltaic component back plate heat radiation, it is characterized in that, comprise the following steps:
(1) to packaged photovoltaic module, or assembly semi-finished product, purge clean described photovoltaic module or the half-finished backboard back side of assembly;
(2) reflective coating being used for photovoltaic component back plate heat radiation described in one of claim 1-6 is all applied to the backboard back side of the photovoltaic module after step (1) process, coating thickness 5 ~ 200 μm;
(3) by the photovoltaic module after step (2) process, 0.5-2h is placed at ambient temperature, spontaneous curing; Or be placed in baking oven, after being warming up to 40 ~ 80 DEG C, afterheat baking 0.5-2h, solidifies completely, gets product.
10. a photovoltaic module, is characterized in that, the backboard backside coating of described photovoltaic module is had the right the reflective coating for photovoltaic component back plate heat radiation described in any claim of requirement 1 to 6.
CN201510343591.7A 2015-06-19 2015-06-19 Reflecting coating used for photovoltaic assembly backboard heat dissipation, preparation technology and application thereof Pending CN105047745A (en)

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Cited By (7)

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CN106118419A (en) * 2016-06-29 2016-11-16 海信集团有限公司 A kind of coating and preparation method thereof and components and parts
CN108297512A (en) * 2018-01-31 2018-07-20 江苏双双高新科技有限公司 A kind of photovoltaic component back plate film layer
CN109119504A (en) * 2018-11-02 2019-01-01 南京朗伯尼特新能源有限公司 Photovoltaic module and the method for preparing porous PVDF-HFP film at the photovoltaic module back side
CN109294290A (en) * 2018-09-04 2019-02-01 景德镇陶瓷大学 A kind of high-performance environment protection type highly-reflective coating material and its preparation method and application
CN111548656A (en) * 2020-05-28 2020-08-18 新疆锑都节能科技有限公司 HTEE series high-temperature infrared radiation coating and using method thereof
CN111952413A (en) * 2020-08-14 2020-11-17 上海晶澳太阳能科技有限公司 Manufacturing method of photovoltaic module
CN111952393A (en) * 2020-08-14 2020-11-17 上海晶澳太阳能科技有限公司 Photovoltaic module, back sheet for photovoltaic module, and method for manufacturing photovoltaic module

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CN103180967A (en) * 2010-10-13 2013-06-26 金敏赫 Back sheet of a solar cell module for photovoltaic power generation
CN104231701A (en) * 2014-10-09 2014-12-24 哈尔滨工业大学 Infrared radiating coating for photovoltaic module backing plate and preparation method of radiating photovoltaic module backing plate

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CN103180967A (en) * 2010-10-13 2013-06-26 金敏赫 Back sheet of a solar cell module for photovoltaic power generation
JP2012164901A (en) * 2011-02-09 2012-08-30 Nisshin Steel Co Ltd Building material integrated type solar battery and back sheet of the solar battery
CN104231701A (en) * 2014-10-09 2014-12-24 哈尔滨工业大学 Infrared radiating coating for photovoltaic module backing plate and preparation method of radiating photovoltaic module backing plate

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106118419A (en) * 2016-06-29 2016-11-16 海信集团有限公司 A kind of coating and preparation method thereof and components and parts
CN108297512A (en) * 2018-01-31 2018-07-20 江苏双双高新科技有限公司 A kind of photovoltaic component back plate film layer
CN109294290A (en) * 2018-09-04 2019-02-01 景德镇陶瓷大学 A kind of high-performance environment protection type highly-reflective coating material and its preparation method and application
CN109119504A (en) * 2018-11-02 2019-01-01 南京朗伯尼特新能源有限公司 Photovoltaic module and the method for preparing porous PVDF-HFP film at the photovoltaic module back side
CN111548656A (en) * 2020-05-28 2020-08-18 新疆锑都节能科技有限公司 HTEE series high-temperature infrared radiation coating and using method thereof
CN111952413A (en) * 2020-08-14 2020-11-17 上海晶澳太阳能科技有限公司 Manufacturing method of photovoltaic module
CN111952393A (en) * 2020-08-14 2020-11-17 上海晶澳太阳能科技有限公司 Photovoltaic module, back sheet for photovoltaic module, and method for manufacturing photovoltaic module
CN111952393B (en) * 2020-08-14 2023-10-20 上海晶澳太阳能科技有限公司 Photovoltaic module, back plate of photovoltaic module and manufacturing method of photovoltaic module

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Application publication date: 20151111