CN109119504A - Photovoltaic module and the method for preparing porous PVDF-HFP film at the photovoltaic module back side - Google Patents
Photovoltaic module and the method for preparing porous PVDF-HFP film at the photovoltaic module back side Download PDFInfo
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- CN109119504A CN109119504A CN201811298952.0A CN201811298952A CN109119504A CN 109119504 A CN109119504 A CN 109119504A CN 201811298952 A CN201811298952 A CN 201811298952A CN 109119504 A CN109119504 A CN 109119504A
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- 229920005569 poly(vinylidene fluoride-co-hexafluoropropylene) Polymers 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000011148 porous material Substances 0.000 claims abstract description 16
- 238000000614 phase inversion technique Methods 0.000 claims abstract description 6
- 238000009835 boiling Methods 0.000 claims description 23
- 239000002904 solvent Substances 0.000 claims description 22
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000007605 air drying Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- UXGNZZKBCMGWAZ-UHFFFAOYSA-N dimethylformamide dmf Chemical compound CN(C)C=O.CN(C)C=O UXGNZZKBCMGWAZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000000935 solvent evaporation Methods 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 31
- 238000002310 reflectometry Methods 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 7
- 238000010276 construction Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 21
- 239000002033 PVDF binder Substances 0.000 description 18
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 18
- 229920002620 polyvinyl fluoride Polymers 0.000 description 14
- 239000011241 protective layer Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007761 roller coating Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OQMIRQSWHKCKNJ-UHFFFAOYSA-N 1,1-difluoroethene;1,1,2,3,3,3-hexafluoroprop-1-ene Chemical compound FC(F)=C.FC(F)=C(F)C(F)(F)F OQMIRQSWHKCKNJ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 241001269238 Data Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses a kind of photovoltaic module, including solar battery sheet and backboard, and the outermost layer of the backboard is the porous PVDF-HFP film with multiple dimensioned micro-nano pore structure.Further, invention additionally discloses a kind of methods for preparing porous PVDF-HFP film in module backside using solution phase inversion method.The present invention improves the reflectivity and thermal emissivity rate at the photovoltaic module back side, reduces the operating temperature of photovoltaic module, lifting assembly generating capacity by coating one layer of PVDF-HFP thin-film material with special construction in module backside.
Description
Technical field
The invention belongs to the design of photovoltaic module and application field more particularly to a kind of photovoltaic groups that can reduce operating temperature
Part.
Background technique
Photovoltaic module is a kind of photovoltaic effect using silica-base material PN junction, the dress converted solar energy into electrical energy
It sets, comprising: receive the face glass foreboard of sunlight irradiation, the polymer backboard at the back side is arranged in glass front plate and polymer
Silica-based solar cell piece between backboard, metal edge frame, the glue of fixed glass front plate, solar battery sheet and polymer backboard
Film etc..
The backboard of photovoltaic module plays protection and supporting role to cell piece, has reliable insulating properties, water preventing ability, resistance to old
The property changed generally has three-decker (PVF/PET/PVF or PVDF/PET/PVDF).PVF, scientific name polyvinyl fluoride.PVDF, scientific name
Kynoar.Outer protective layer PVF or PVDF, have good environment resistant erosiveness, and middle layer of PET polyester film has
Good insulation performance, internal layer PVF or PVDF and EVA have good adhesive property.PVF and PVDF is most common two kinds fluorine-containing
Material has optimal weatherability in all high molecular materials.This unique performance is derived from its special molecular structure C-F.
C-F key is that bond energy is maximum in organic compound covalent bond.PVDF fluorine atom more than PVF on molecular structure, so than
PVF is finer and close, more preferable more resistant to time, barrier property, and has the properties such as piezoelectricity, dielectricity, pyroelectricity, moreover, PVDF
Cost will be lower than PVF.Therefore, the backboard of the fluorine film containing PVDF is used in present photovoltaic industry mostly.
The rated generation power of photovoltaic module is obtained under 25 DEG C of standard test condition.In a practical situation, by
The joule heat generated when component internal resistance is passed through in the radiation of sunlight and electric current, the operating temperature of component is than environment temperature
It spends 30~40 DEG C high.The temperature power coefficient of component be -0.45%/DEG C, also mean that, temperature it is every raising once, component
Generated output will decline 0.45%.Under 30 DEG C of environment temperature, the operating temperature of component rises to 65 DEG C, then rated power
For the component of 300W, actual generation power only has: 300W × (1- (65-25) * 0.45%)=246W.If certain can be passed through
Technological means reduces the operating temperature of component, will lifting assembly actual power ability.
The application for a patent for invention of Publication No. CN108336167A discloses a kind of solar energy with radiation cooling function
Component is lied prostrate, using opaque radiant cooling coating, including macromolecule resin, micro-powder, coating additive and diluent, is coated in light
On the front surface for lying prostrate component light.Such technical solution plans opaque radiant cooling coating and is coated in component front, to optimize group
The positive thermal radiation capability of part, to reach cooling to help to improve generated energy.But in view of component front needs as far as possible
Sunlight is absorbed, this scheme can not reduce incident light by way of improving reflectivity, and then reduce component heating, therefore, effect
Fruit is extremely limited, moreover, this scheme needs at a temperature of 0.5~1h of solidification to coating material at 100~200 DEG C, technique is cumbersome.
The patent of invention of Publication No. CN203071106U discloses a kind of backboard and photovoltaic module, is intended that and is aoxidized with containing metal
The material of object is covered on the back side of photovoltaic component back plate, component temperature is reduced by way of radiation.But this scheme does not consider to lead to
The reflectivity of raising component backboard outer surface is crossed to reduce the heating of incident light bring, also, the program does not illustrate how reality
The technology is applied, according to relevant industries experience, which needs using complicated vacuum deposition device, higher cost.
The utility model patent of Publication No. CN203690323U discloses a kind of cooling-down type solar components, preceding plate and solar
Component and rear glass sheet and frame surround the shape of a hollow structure, and hollow space is a circulating water cavity, by hollow
The mode of water cavity cools down to component, but structure is complicated for the program, at high cost, and needs water loss larger, is not suitable for promoting
Using.
Summary of the invention
To solve the above problems, a kind of method that the present invention will provide photovoltaic module and reduce photovoltaic module operating temperature,
By coating one layer of PVDF-HFP (vinylidene fluoride-hexafluoropropene) thin-film material with special construction in module backside, from
And the reflectivity and thermal emissivity rate at the photovoltaic module back side are improved, reduce the operating temperature of photovoltaic module, lifting assembly generating capacity.
The present invention discloses a kind of backboard, including backboard body, and is covered on backboard body outermost layer with multiple dimensioned micro-
The porous PVDF-HFP film of nano pore structure.
As a preferred embodiment, the porous PVDF-HFP film with a thickness of 100-2000 microns.
As a preferred embodiment, the porous PVDF-HFP film with a thickness of 300-800 microns.
As a preferred embodiment, the pore-size distribution of the multiple dimensioned micro-nano pore structure is 200-500 nanometers and 3-8 micro-
Rice.
As a preferred embodiment, the porous PVDF-HFP film is prepared using solution phase inversion method.
Invention additionally discloses a kind of photovoltaic modulies, including solar battery sheet, and with above-mentioned any one feature
Backboard, the outermost layer of the backboard are the porous PVDF-HFP film with multiple dimensioned micro-nano pore structure.
As a preferred embodiment, the solar battery sheet is silica-based solar cell piece, and the backboard is polymer
Backboard.
As a preferred embodiment, polymer backboard successively includes internal layer protective layer, the first adhesive layer, centre from inside to outside
Layer PET, the second adhesive layer, outer protective layer and porous PVDF-HFP film；The internal layer protective layer and outer protective layer are PVF
Or PVDF.
Further, invention additionally discloses a kind of method for preparing porous PVDF-HFP film at the photovoltaic module back side, packets
It includes:
A certain amount of PVDF-HFP and high boiling non-solvent are dissolved in low boiling point solvent, PVDF-HFP mixing is obtained
Liquid；
The PVDF-HFP mixed liquor is coated to the outer surface of component backboard；
It volatilizees to low boiling point solvent, after high boiling non-solvent evaporation, being formed has the porous of multiple dimensioned micro-nano pore structure
PVDF-HFP film；
The porous PVDF-HFP film with a thickness of 100-2000 microns；The aperture of the multiple dimensioned micro-nano pore structure point
Cloth is 200-500 nanometers and 3-8 microns.
As a preferred embodiment, mass concentration of the PVDF-HFP in mixed liquor is 2%~4%, described high boiling
Mass concentration of the non-solvent selected in mixed liquor is 75~85%.
As a preferred embodiment, the mass mixing ratio of the PVDF-HFP, high boiling non-solvent and low boiling point solvent
Example is 3:100:20.
As a preferred embodiment, the low boiling point solvent is acetone or dimethylformamide DMF, described high boiling non-
Solvent is deionized water or dehydrated alcohol.
As a preferred embodiment, the PVDF-HFP mixed liquor is coated to the outer surface of component backboard, natural wind
It is 2~4 hours dry.
The utility model has the advantages that
(1) present invention is by one layer of the photovoltaic module backside coating special PVDF- with multiple dimensioned micro-nano pore structure
The reflectivity of component backboard outer surface had both can be improved in HFP film (porous PVDF-HFP film), reduced incident sunlight bring
Heating influences；The radiance that component backboard outer surface can be improved again, the joule hair generated when electric current is flowed through component internal resistance
Heat is quickly distributed to the external world.PVDF thin film backboard reflectivity compared to conventional photovoltaic component is 70% or so, energy of the present invention
Reflectivity is improved to 90% or more, radiance is up to 0.9 or more, and, it can be achieved that 5 DEG C or so under the action of this double effects
Cooling so that the actual power ability of component can promote 2% or more.
(2) present invention provides the simple and easy solution phase inversion method of one kind to prepare porous PVDF-HFP film, due to system
Preparation Method and implementing process are all very simple, and cost is relatively low, both can be applied on the component of new production, can also be applied to install
On component in power station, it is suitable for large-scale promotion application.
Detailed description of the invention
Fig. 1 is the sectional view of conventional photovoltaic backboard described in contrast groups 1；
Fig. 2 is the sectional view of the photovoltaic back described in embodiment 1 that can reduce operating temperature；
Attached drawing mark explanation: 101 be internal layer protective layer PVF or PVDF, and 103 be outer protective layer PVF or PVDF, and 104 are
Middle layer of PET, 102 be adhesive layer, and 105 be porous PVDF-HFP film.
Specific embodiment
In order to more clearly illustrate this motion, attached drawing used in description of Related Art will be done simply introduce below.
It should be evident that the accompanying drawings in the following description is only some embodiments of this motion.Those of ordinary skill in the art are come
It says, without creative efforts, is also possible to obtain other drawings based on these drawings.
Contrast groups 1 disclose a kind of conventional photovoltaic assemblies, mainly include silica-based solar cell piece, are arranged in the silicon substrate sun
The positive face glass foreboard for receiving sunlight irradiation of energy cell piece, the polymer that the silica-based solar cell piece back side is set
Backboard, and fixed glass front plate, solar battery sheet and metal edge frame, the glue film of polymer backboard etc..As shown in connection with fig. 1,
Its back board structure mainly includes internal layer protective layer 101, adhesive layer 102, outer protective layer 103 and middle layer of PET 104, wherein interior
PVF or PVDF material, preferred PVDF material in embodiment can be used in external protection.Outer layer PVDF is 30 μm, and middle layer of PET is
250 μm, internal layer PVDF is 30 μm.
Embodiment 1 discloses a kind of photovoltaic module that can reduce operating temperature using scheme of the present invention, with reality
The main difference for applying conventional photovoltaic assemblies described in example 1 is polymer backboard.As shown in connection with fig. 2, back board structure is main
Including internal layer protective layer 101, adhesive layer 102, outer protective layer 103, middle layer of PET 104 and porous PVDF-HFP film 105.
Wherein, porous PVDF-HFP film 105 is a kind of PVDF-HFP film (abbreviation with multiple dimensioned micro-nano pore structure
Porous PVDF-HFP film), a kind of simple and easy solution phase can be used in 200-500 nanometers and 3-8 microns in pore-size distribution
It is prepared by transformation approach.
Solution phase inversion method, be using a kind of low boiling point solvent (such as acetone or dimethylformamide DMF) and it is a kind of compared with
PVDF-HFP is dissolved in the mixed liquor of the two by high boiling non-solvent (such as deionized water or dehydrated alcohol).Low boiling point
Solvent volatilizees rapidly, and the volatilization of non-solvent is slower, so that solution generation mutually separates, to form multiple dimensioned micro-nano pore structure.
Based on the above principles, a certain amount of PVDF-HFP (vinylidene fluoride-hexafluoropropene) and deionized water dissolving are existed
In acetone, it is coated on the outer surface of component backboard.After acetone volatilization, PVDF-HFP will be precipitated out, and be coated on micro-nano water
On pearl, finally forming one layer in outer layer protective layer after moisture evaporation has the PVDF-HFP of multiple dimensioned micro-nano pore structure thin
Film.
Embodiment 2 discloses a kind of method for preparing porous PVDF-HFP film by solution phase inversion method, mainly include with
Lower step:
Prepare the mixed liquor of the non-solvent of PVDF-HFP, low boiling point solvent and higher, wherein PVDF-HFP is being mixed
Mass concentration in liquid is 2%~4%, and mass concentration of the deionized water in mixed liquor is 75~85%；
After mixing by solution, the mode that roller coating can be used is coated in module backside；
The component for being coated with PVDF-HFP mixed liquor is placed under the conditions of room temperature (25 ± 2 DEG C), and natural air drying about 2 hours；
After low boiling point solvent volatilization, PVDF-HFP will be precipitated out, and be coated on micro-nano droplet, to higher
After non-solvent evaporation, the multiple dimensioned hole configurations with 200-500 nanometers and 3-8 microns is finally formed in module backside.
PVDF-HFP film with multiple dimensioned micro-nano pore structure can regulate and control reflectivity/radiance of different optical regions.
The reflectivity that this film has at (0.3-2.5 microns) of sunlight wave band higher than 90% can avoid material by sunlight heats, simultaneously
In (8-13 microns) of the infra-red radiation window radiances having higher than 0.9 of atmosphere, so as to effectively radiations heat energy.
Embodiment 3 discloses a kind of method for coating porous PVDF-HFP film in the module backside being mounted in power station,
It mainly comprises the steps that
The mixed solution that the mass mixing ratio of PVDF-HFP, deionized water and acetone is about 3:100:20 is prepared, and will
Solution is uniformly mixed；
The component backboard being mounted in power station is carried out with dehydrated alcohol, is dried again with cotton after cleaning；
PVDF-HFP mixed liquor is coated four times in module backside with the mode of roller coating；
Under the conditions of conventional outdoor temperature, after natural air drying about 3 hours, component backboard outer surface forms about 800 microns of thickness
PVDF-HFP film.
The reflectivity 99% of module backside is measured, thermal emissivity rate is up to 0.97.It further measures component and integrally cools down about 5
℃.By -0.45%/DEG C component power temperature coefficient calculate, the actual power ability of component can promote about 2.2%.
Currently, the backboard that conventional photovoltaic assemblies described in implementing 1 use, outer surface is PVDF thin film, reflectivity mostly
It is 70% or so.The PVDF-HFP thin film coated with multiple dimensioned micro-nano pore structure is existed using the embodiment 2 of the present invention program
Behind component backboard outer surface, reflectivity is improved to 90% or more, can obviously reduce incident sunlight bring heating influences.This
Outside, the high radiant rate of PVDF-HFP film, the joule heat generated when electric current can be flowed through to component internal resistance, quickly distributes
To the external world.Under the action of this double effects, this technical solution can realize 5 DEG C or so of cooling.By -0.45%/DEG C component
Temperature power coefficient calculates, and the actual power ability of component can promote 2% or more.
In conjunction with above-mentioned method, two groups of specific experimental datas are given below, as follows respectively:
Experimental group 1: by PVDF-HFP the and 1000g deionized water dissolving of 30g in 200g acetone；Solution is mixed equal
It is even, it is coated once with the mode of roller coating in module backside；The component for being coated with PVDF-HFP mixed liquor is placed on room temperature (25 ± 2
DEG C) under the conditions of, after natural air drying about 2 hours, component backboard outer surface forms about 300 microns of thick PVDF-HFP films.
The reflectivity for measuring module backside is up to 96%, and thermal emissivity rate is up to 0.97.Component is further measured integrally to cool down
About 4 DEG C.By -0.45%/DEG C component power temperature coefficient calculate, the actual power ability of component can promote about 1.8%.
Experimental group 2: by PVDF-HFP the and 1000g deionized water dissolving of 30g in 200g acetone；Solution is mixed equal
It is even, it is coated four times with the mode of roller coating in module backside；The component for being coated with PVDF-HFP mixed liquor is placed on room temperature (25 ± 2
DEG C) under the conditions of, after natural air drying about 3 hours, component backboard outer surface forms about 800 microns of thick PVDF-HFP films.
The reflectivity 99.6% of module backside is measured, thermal emissivity rate is up to 0.97.It further measures component and integrally cools down about 6
℃.By -0.45%/DEG C component power temperature coefficient calculate, the actual power ability of component can promote about 2.7%.
To sum up, conventional photovoltaic assemblies backboard of the photovoltaic component back plate disclosed in this invention relative to embodiment 1, area
It is not only that and is coated with one layer of PVDF-HFP thin-film material with special construction in backboard outermost layer, can improve simultaneously as a result,
The reflectivity and radiance of component backboard outer surface can more effectively reduce the operating temperature of component, the practical hair of lifting assembly
Electric energy power.Also, since preparation method and implementing process are all very simple, the component in new production had both been can be used in the technical program
On, it is possible to use on the component being mounted in power station.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of backboard, which is characterized in that including backboard body, and be covered on backboard body outermost layer with multiple dimensioned micro-nano
The porous PVDF-HFP film of pore structure.
2. backboard as claimed in claim 2, which is characterized in that the pore-size distribution of the multiple dimensioned micro-nano pore structure is 200-
500 nanometers and 3-8 microns.
3. backboard as claimed in claim 2 or claim 3, which is characterized in that the porous PVDF-HFP film with a thickness of 100-
2000 microns.
4. backboard as claimed in claim 4, which is characterized in that the porous PVDF-HFP film it is micro- with a thickness of 300-800
Rice.
5. a kind of photovoltaic module, which is characterized in that including solar battery sheet, and there is Claims 1-4 any one institute
State the backboard of feature.
6. a kind of method for preparing porous PVDF-HFP film at the photovoltaic module back side, which is characterized in that use solution phase inversion
Method preparation, specifically includes:
A certain amount of PVDF-HFP and high boiling non-solvent are dissolved in low boiling point solvent, PVDF-HFP mixed liquor is obtained；
The PVDF-HFP mixed liquor is coated to the outer surface of component backboard；
It volatilizees to low boiling point solvent, after high boiling non-solvent evaporation, forms the porous PVDF- with multiple dimensioned micro-nano pore structure
HFP film；
The porous PVDF-HFP film with a thickness of 100-2000 microns；The pore-size distribution of the multiple dimensioned micro-nano pore structure is
200-500 nanometers and 3-8 microns.
7. method as claimed in claim 6, which is characterized in that mass concentration of the PVDF-HFP in mixed liquor is 2%
~4%, mass concentration of the high boiling non-solvent in mixed liquor is 75~85%.
8. the method for claim 7, which is characterized in that the PVDF-HFP, high boiling non-solvent and low boiling point are molten
The mass mixing ratio of agent is 3:100:20.
9. method as claimed in claim 6, which is characterized in that the low boiling point solvent be acetone or dimethylformamide DMF,
The high boiling non-solvent is deionized water or dehydrated alcohol.
10. the method as described in claim 6 to 9 any one, which is characterized in that by the PVDF-HFP mixed liquor coat to
Behind the outer surface of component backboard, natural air drying 2~4 hours.
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