CN105024267A - Linear laser generation system - Google Patents
Linear laser generation system Download PDFInfo
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- CN105024267A CN105024267A CN201510466223.1A CN201510466223A CN105024267A CN 105024267 A CN105024267 A CN 105024267A CN 201510466223 A CN201510466223 A CN 201510466223A CN 105024267 A CN105024267 A CN 105024267A
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- microlens array
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- wordline
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Abstract
The invention proposes an optical system for generating wide-angle and high-uniformity laser rays, and aims to provide an optical system capable of converting light beams of a semiconductor laser into uniform laser rays. The optical system is realized according to the following technical scheme: lasers emitted from the semiconductor laser (1) are collimated by a laser alignment lens (2) and then go through a binary microlens array (3) to obtain uniform linear lasers, and a field angle is greater than 72 degrees. The linear laser generation system has the characteristics of large spreading angel of the laser rays, uniform light distribution, linear divergence angle, no corresponding relation of light beam incident position and sport diameter, insensitivity in the change of the divergence angle of incident laser beams, small device volume, structural compactness, low installation accuracy requirement and low mass production cost, and has wide application in fields such as laser fuze, engineering surveying and positioning, laser alarming and warning and the like.
Description
Technical field
The present invention relates to one and be applied to the fields such as laser fuze, engineering survey location, laser warning warning, about the optical system generating wide-angle high uniformity laser rays.
Background technology
The optical system of existing generation laser one wordline has common cylindrical mirror optical system, optical system, aspheric design optical system or the free-form surface lens optical system of collimating lens combination Bao Weier line prism.One beam energy is the wordline that the laser beam of Gaussian Profile generates through common cylindrical mirror, and its center has brighter hot spot to be existed, and linear edge energy has the phenomenon of degenerating gradually.Bao Weier prism is a kind of optics line prism, most optimally can be divided into the straight line that optical density is even, good stability, linearity are good after it makes laser beam pass through.The line of Bao Weier prism is better than the line pattern of cylindrical lens, can eliminate the center focus of Gaussian beam and edge distribution of fading.Although Bao Weier rules, prism can generate Energy distribution uniform wide-angle laser one wordline, needs the spot diameter of incident laser less.Aspheric design and free-form surface lens all can obtain Vernonia parishii Hook. F. angle one wordline of energy even distribution, but production cost is high, are not suitable for producing in enormous quantities.
Such as China Patent No. CN103701026A disclosed " laser and linear laser ", be exactly adopt collimating lens combination Bao Weier to rule prism as optical system, the light that it is sent by two panels semiconductor laser chip superposes mutually formation ellipse light spot, then obtains through the optical system of collimating lens combination Bao Weier line prism the line source that uniformity is good, subtended angle is large.But this generation one wordline optical system in use, the incoming position of laser beam, beam diameter and energy distribution of laser all can generate effect to laser one wordline and produce considerable influence, and such as when launching spot becomes large, the angle of divergence of laser rays also can correspondingly increase; Laser incoming position departs from components and parts optical axis, and laser rays will become asymmetric.
Summary of the invention
The present invention is further improvement of existing technologies and development, its objective is for above-mentioned the deficiencies in the prior art part, provide that a kind of laser rays diffusion angle is large, light distribution evenly, the incoming position of a wordline angle of flare and incoming laser beam and spot diameter without corresponding relation, a wordline light distribution to the angle of divergence of incoming laser beam change insensitive, device volume is little, installation accuracy requires that the low wordline laser of low, compact conformation, batch production cost generates optical system.
In order to achieve the above object, an a kind of wordline laser generation system provided by the invention, comprise semiconductor laser 1, laser collimator lens 2 and binary microlens array 3, it is characterized in that: semiconductor laser 1 coaxial one adhesion collimating lens 2, binary microlens array 3 is placed in collimating lens 2 rear end.The laser that semiconductor laser 1 sends, after laser collimator lens 2 collimates, incides binary microlens array 3, and binary microlens array 3 rotates and generates the subtended angle wordline laser that is greater than 72 ° centered by incident light axis.
The present invention has following beneficial effect compared to prior art:
The present invention adopts semiconductor laser device beam shaping technology, the laser utilizing laser collimator lens 2 noise spectra of semiconductor lasers 1 to send carries out collimator and extender, recycling binary microlens array 3 collimation light beam carries out light intensity homogenize, such that the final wordline laser diffusion angle generated is large, light distribution is even.Beam diameter size, facula position and energy uniformity that semiconductor laser 1 sends do not affect diffusion angle and the energy distribution of laser of the wordline laser finally generated.Binary microlens array 3 rotates and laser rays can be made to rotate centered by incident light axis generate the subtended angle wordline laser that is greater than 72 ° centered by incident light axis.Because binary microlens array 3 adopts binary diffractive optic technology, utilize the embossment phase place band structure aberration correction on surface, there is high-diffraction efficiency, so the wordline laser intensity distribution generated is even, and insensitive to the angle of divergence change of incoming laser beam.Due to the method that binary microlens array 3 adopts binary optical elements array integrated, there is Large visual angle, disappear the characteristics such as reflection and polarization, so the wordline laser diffusion angle generated is large, and with the incoming position of incoming laser beam and spot diameter without corresponding relation.
Optical system structure of the present invention is simple, and volume is little, is easy to install, and batch production cost is low.
Accompanying drawing explanation
In order to further illustrate instead of limit above-mentioned implementation of the present invention, below in conjunction with accompanying drawing, the present invention is further described, but therefore do not limit the present invention among described practical range.All these designs should be considered as content disclosed in this technology and protection scope of the present invention.
Fig. 1 is the present invention one wordline laser generation system STRUCTURE DECOMPOSITION schematic diagram.
Fig. 2 is the present invention one wordline laser generation system principle schematic.
In figure: 1 semiconductor laser, 2 laser collimator lens, 3 binary microlens arrays.
Embodiment
Consult Fig. 1.In embodiment described below, an a kind of wordline laser generation system, comprise semiconductor laser 1, laser collimator lens 2 and binary microlens array 3, wherein: semiconductor laser 1 forms one with collimating lens 2 by gluing the connecing of optical resin, and binary microlens array 3 is placed in collimating lens 2 rear end.Embodiment is as follows: first by evenly bonding with laser collimator lens 2 plane of incidence for semiconductor laser 1 exiting surface optics epoxide-resin glue, wherein the diameter of laser collimator lens 2 plane of incidence is 4mm, bondline thickness is between 0.1mm ~ 0.2mm, bonding rear normal temperature places two days, waits for that glue is done.Then utilize encapsulating structure that binary microlens array 3 level is placed in laser collimator lens 2 rear end, ensure that binary microlens array 3 end face is vertical with incident light axis, wherein binary microlens array 3 is of a size of 8mm × 4mm.The bright dipping of last semiconductor laser 1, centered by incident light axis, rotate binary microlens array 3, laser rays is rotated centered by incident light axis, subtended angle to be generated is greater than 72 ° and a wordline laser of uniform intensity, the encapsulating structure of fixing binary microlens array 3.
Consult Fig. 2.Semiconductor laser 1 sends the laser beam with the specific angle of divergence, and divergent beams become collimated light beam after laser collimator lens 2, and collimated light beam incides binary microlens array 3.The concavees lens that binary microlens array 3 is 2um ~ 1.5mm by footpath, rim of the mouth form by rectanglar arrangement, and integrated level reaches 800 × 600/cm
2.The single-element lens number of steps of binary microlens array 3 is 8, and diffraction efficiency reaches 95%.Because single-element lens maximum numerical aperture is greater than 0.58, so collimated light beam subtended angle after each single-element lens of binary microlens array 3 is greater than 72 °, when all collimated light beams superpose after rectangular lens array, subtended angle is still greater than 72 °.Owing to only having the rectanglar arrangement direction when binary microlens array 3 vertical with incident light axis, the condition that could meet embossment phase place band structure aberration correction makes outgoing beam uniform intensity distribution, so last binary microlens array 3 must rotate centered by incident light axis, generation subtended angle is greater than 72 ° and a wordline laser of uniform intensity.
Claims (5)
1. a wordline laser generation system, comprise semiconductor laser (1), laser collimator lens (2), binary microlens array (3), it is characterized in that: semiconductor laser (1) coaxial one adhesion collimating lens (2), binary microlens array (3) is placed in collimating lens (2) rear end, the laser that semiconductor laser (1) sends is after laser collimator lens (2) collimation, incide binary microlens array (3), binary microlens array (3) rotates and generates the subtended angle wordline laser that is greater than 72 ° centered by incident light axis.
2. a wordline laser generation system according to claim 1, is characterized in that: the concavees lens that binary microlens array (3) is 2um ~ 1.5mm by footpath, rim of the mouth form by rectanglar arrangement.
3. a wordline laser generation system according to claim 1, is characterized in that: the single-element lens number of steps of binary microlens array (3) is 8.
4. a wordline laser generation system according to claim 3, is characterized in that: single-element lens maximum numerical aperture is greater than 0.58mm.
5. a wordline laser generation system according to claim 1, it is characterized in that: collimated light beam subtended angle after each single-element lens of binary microlens array (3) is greater than 72 °, when all collimated light beams superpose after rectangular lens array, subtended angle is still greater than 72 °.
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CN201510466223.1A CN105024267A (en) | 2015-08-01 | 2015-08-01 | Linear laser generation system |
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CN201510466223.1A CN105024267A (en) | 2015-08-01 | 2015-08-01 | Linear laser generation system |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106444051A (en) * | 2016-11-11 | 2017-02-22 | 中国科学院长春光学精密机械与物理研究所 | Lens and line source system |
CN107014773A (en) * | 2017-05-04 | 2017-08-04 | 天津同阳科技发展有限公司 | Super-wide coverage face optics flue gas monitoring system |
CN107064907A (en) * | 2017-03-07 | 2017-08-18 | 北京环境特性研究所 | A kind of laser beam emitting device of new LRCS test systems |
CN107607473A (en) * | 2017-08-31 | 2018-01-19 | 华南师范大学 | A kind of while multi-point shooting is with matching the opto-acoustic three-dimensional imaging received and method |
CN107942521A (en) * | 2017-12-21 | 2018-04-20 | 中国电子科技集团公司第三十四研究所 | A kind of diode laser array light source |
CN108309559A (en) * | 2018-02-05 | 2018-07-24 | 苏州宣嘉光电科技有限公司 | Induced retinal generates and discharges dopamine and activate the method and ophtalmic treatments instrument of dopamine receptor D1 |
CN108567548A (en) * | 2018-04-27 | 2018-09-25 | 江苏省人民医院 | A kind of device of walking aid that audio visual stimulation is oriented to |
CN110749948A (en) * | 2019-11-15 | 2020-02-04 | 杭州驭光光电科技有限公司 | Diffractive optical element, optical module including the same, and reference line projection apparatus |
CN111795921A (en) * | 2020-07-14 | 2020-10-20 | 南京理工大学 | Particle counter sensor beam homogenization and sharpening illumination system |
CN111900608A (en) * | 2020-07-30 | 2020-11-06 | 青岛镭创光电技术有限公司 | Small-fan-angle laser line light source module |
CN112260044A (en) * | 2020-10-23 | 2021-01-22 | 青岛镭创光电技术有限公司 | Laser device with uniform energy |
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CN1885094A (en) * | 2006-06-27 | 2006-12-27 | 中国科学院光电技术研究所 | Method for realizing beam shaping of area array semiconductor laser by total internal reflection type microprism array |
CN202904126U (en) * | 2012-11-26 | 2013-04-24 | 沈阳工业大学 | Linear light beam shaping optics system |
CN103246066A (en) * | 2013-05-17 | 2013-08-14 | 中国科学院光电技术研究所 | Optical system for homogenizing planar array semiconductor laser beam |
CN103701026A (en) * | 2013-12-30 | 2014-04-02 | 青岛镭创光电技术有限公司 | Laser and linear laser |
CN104360485A (en) * | 2014-11-04 | 2015-02-18 | 北京凌云光技术有限责任公司 | Linear laser light source and image acquisition system |
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CN1885094A (en) * | 2006-06-27 | 2006-12-27 | 中国科学院光电技术研究所 | Method for realizing beam shaping of area array semiconductor laser by total internal reflection type microprism array |
CN202904126U (en) * | 2012-11-26 | 2013-04-24 | 沈阳工业大学 | Linear light beam shaping optics system |
CN103246066A (en) * | 2013-05-17 | 2013-08-14 | 中国科学院光电技术研究所 | Optical system for homogenizing planar array semiconductor laser beam |
CN103701026A (en) * | 2013-12-30 | 2014-04-02 | 青岛镭创光电技术有限公司 | Laser and linear laser |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106444051A (en) * | 2016-11-11 | 2017-02-22 | 中国科学院长春光学精密机械与物理研究所 | Lens and line source system |
CN107064907A (en) * | 2017-03-07 | 2017-08-18 | 北京环境特性研究所 | A kind of laser beam emitting device of new LRCS test systems |
CN107014773A (en) * | 2017-05-04 | 2017-08-04 | 天津同阳科技发展有限公司 | Super-wide coverage face optics flue gas monitoring system |
CN107607473A (en) * | 2017-08-31 | 2018-01-19 | 华南师范大学 | A kind of while multi-point shooting is with matching the opto-acoustic three-dimensional imaging received and method |
CN107942521A (en) * | 2017-12-21 | 2018-04-20 | 中国电子科技集团公司第三十四研究所 | A kind of diode laser array light source |
CN108309559A (en) * | 2018-02-05 | 2018-07-24 | 苏州宣嘉光电科技有限公司 | Induced retinal generates and discharges dopamine and activate the method and ophtalmic treatments instrument of dopamine receptor D1 |
CN108567548A (en) * | 2018-04-27 | 2018-09-25 | 江苏省人民医院 | A kind of device of walking aid that audio visual stimulation is oriented to |
CN110749948A (en) * | 2019-11-15 | 2020-02-04 | 杭州驭光光电科技有限公司 | Diffractive optical element, optical module including the same, and reference line projection apparatus |
CN111795921A (en) * | 2020-07-14 | 2020-10-20 | 南京理工大学 | Particle counter sensor beam homogenization and sharpening illumination system |
CN111795921B (en) * | 2020-07-14 | 2023-08-22 | 南京理工大学 | Illumination system for particle counter sensor beam homogenization and sharpening |
CN111900608A (en) * | 2020-07-30 | 2020-11-06 | 青岛镭创光电技术有限公司 | Small-fan-angle laser line light source module |
CN112260044A (en) * | 2020-10-23 | 2021-01-22 | 青岛镭创光电技术有限公司 | Laser device with uniform energy |
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