CN105021298A - Diode temperature transducer - Google Patents
Diode temperature transducer Download PDFInfo
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- CN105021298A CN105021298A CN201510407715.3A CN201510407715A CN105021298A CN 105021298 A CN105021298 A CN 105021298A CN 201510407715 A CN201510407715 A CN 201510407715A CN 105021298 A CN105021298 A CN 105021298A
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- resistance
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- triode
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Abstract
The invention discloses a diode temperature transducer, and specific circuit structure design includes mutually connected first to eighth resistors, first to sixth capacitors, a diode, a triode, and first and second amplifiers. The circuit disclosed by the invention is simple in design structure and high in measurement accuracy. At the same time, the firmness degree and stability of materials are relatively good, and long-term accurate use can be realized.
Description
Technical field
The invention discloses a kind of diode temperature sensor, relate to the technical field of circuit design of temperature control diode.
Background technology
Temperature sensor (temperature transducer) refers to can experience temperature and the sensor converting usable output signal to.Temperature sensor is the core of temperature measuring instrument, various in style.Contact and contactless two large classes can be divided into by metering system, be divided into thermal resistance and thermopair two class according to sensor material and electron component characteristic.
Metal is along with temperature variation, and its resistance value also changes.For different metal, temperature was once often changing, and resistance change is different, and resistance value can directly as output signal.What thermistor was measured on two lines is absolute temperature, have good precision, but it is more expensive than thermocouple, and observable temperature scope is also less than thermocouple.The resistance of conventional thermistor 25 DEG C time is a 5k Ω, and the temperature change of every 1 DEG C causes the resistance variations of 200 Ω, must be noted that to prevent self-heating error.Meanwhile, thermistor is very shaky, and big current can cause self-heating.Because thermistor is a kind of resistive device, any current source all can cause heating because of power thereon.Power equals the long-pending of current squaring and resistance.Therefore little current source to be used.Hanker if thermistor is exposed to height, permanent damage will be caused.
Thermopair is made up of the metal wire of two different materials, welds together at end.Measure the environment temperature not heating position again, just accurately can know the temperature of hot spot.Because it must have the conductor of two kinds of unlike materials, so be referred to as thermopair.The thermopair that unlike material is made is used in different temperature ranges, and their sensitivity is also different.When the sensitivity of thermopair refers to hot spot temperature variation 1 DEG C, the variable quantity of output potential difference.Thermoelectricity for most metals materials for support is sayed occasionally, this numerical value greatly about 5 ~ 40 microvolts/DEG C between.But, it is nonlinear relationship between voltage and temperature, temperature due to voltage and temperature be nonlinear relationship, therefore need to make second time for reference temperature (Tref) to measure, and utilize testing apparatus software or hardware in the conversion of instrument internal process voltage-temperature, finally to obtain thermocouple temperature (Tx).
By temperature and the step-down linear changing relation of diode, corresponding diode temperature sensor can be designed, to solve the deficiency of above-mentioned two kinds of traditional approachs.
Summary of the invention
Technical matters to be solved by this invention is: for the defect of prior art, provides a kind of diode temperature sensor.
The present invention is for solving the problems of the technologies described above by the following technical solutions:
A kind of diode temperature sensor, comprises the first to the 8th resistance, the first to the 6th electric capacity, diode, triode and first, second amplifier, wherein,
One end of described first resistance is connected through the positive input terminal of the second electric capacity with the first amplifier, and the other end of the first resistance is connected with the positive pole of diode, one end of the 4th resistance respectively successively after the first electric capacity, the second resistance, the other end of the 4th resistance is connected with one end of the 8th resistance, the negative input end of the second amplifier respectively, and the other end of the 8th resistance is connected with the output terminal of the second amplifier through the 6th electric capacity, the positive input terminal of the second amplifier respectively with one end of the 6th resistance, one end of 7th resistance is connected, the other end ground connection of the 7th resistance, the other end of the 6th resistance respectively with the negative pole of diode, the collector of triode is connected, the base stage of triode is connected with the output terminal of the first amplifier through the 3rd electric capacity, the emitter of triode respectively with one end of the 4th electric capacity, one end of 5th resistance is connected, the other end of the 4th electric capacity is connected with the negative input end of the first amplifier through the 3rd resistance, the other end of the 5th resistance is also connected with the first amplifier through the 5th electric capacity.
As present invention further optimization scheme, the concrete model of described first amplifier, the second amplifier is TA75458.
As present invention further optimization scheme, described diode is silicon diode.
As present invention further optimization scheme, described silicon diode, voltage stabilizing value is lower than being negative temperature coefficient when 5V; Voltage stabilizing value is more than being positive temperature coefficient (PTC) when 5V.
As present invention further optimization scheme, the output terminal of described second amplifier is also connected with voltage table.
The present invention adopts above technical scheme compared with prior art, has following technique effect: circuit design structure disclosed in this invention is simple, and measuring accuracy is high.Meanwhile, the firmness of material and stability better, can use for a long time accurately.
Accompanying drawing explanation
Fig. 1 is circuit connection diagram of the present invention;
Wherein: R1 to R8 is the first to the 8th resistance, C1 to C6 is the first to the 6th electric capacity, and D is diode, and T is triode, and A1, A2 are respectively first, second amplifier.
Embodiment
Be described below in detail embodiments of the present invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:
Circuit connection diagram of the present invention as shown in Figure 1, described diode temperature sensor, comprise the first to the 8th resistance, first to the 6th electric capacity, diode, triode and first, second amplifier, wherein, one end of described first resistance is connected through the positive input terminal of the second electric capacity with the first amplifier, and the other end of the first resistance is connected with the positive pole of diode, one end of the 4th resistance respectively successively after the first electric capacity, the second resistance, the other end of the 4th resistance is connected with one end of the 8th resistance, the negative input end of the second amplifier respectively, and the other end of the 8th resistance is connected with the output terminal of the second amplifier through the 6th electric capacity, the positive input terminal of the second amplifier respectively with one end of the 6th resistance, one end of 7th resistance is connected, the other end ground connection of the 7th resistance, the other end of the 6th resistance respectively with the negative pole of diode, the collector of triode is connected, the base stage of triode is connected with the output terminal of the first amplifier through the 3rd electric capacity, the emitter of triode respectively with one end of the 4th electric capacity, one end of 5th resistance is connected, the other end of the 4th electric capacity is connected with the negative input end of the first amplifier through the 3rd resistance, the other end of the 5th resistance is also connected with the first amplifier through the 5th electric capacity.
In a kind of embodiment of the present invention, the concrete model of described first amplifier, the second amplifier is TA75458.
In a kind of preferred version of above-mentioned specific embodiments, described diode is silicon diode, this silicon diode, and voltage stabilizing value is lower than being negative temperature coefficient when 5V; Voltage stabilizing value is more than being positive temperature coefficient (PTC) when 5V.
In a kind of preferred version of above-mentioned specific embodiments, the output terminal of described second amplifier is also connected with voltage table, by the concrete reading of voltage table, converses the temperature value that magnitude of voltage is corresponding, realizes the design and use of thermometer.
Circuit design structure disclosed in this invention is simple, and measuring accuracy is high.Meanwhile, the firmness of material and stability better, can use for a long time accurately.
By reference to the accompanying drawings embodiments of the present invention are explained in detail above, but the present invention is not limited to above-mentioned embodiment, in the ken that those of ordinary skill in the art possess, can also makes a variety of changes under the prerequisite not departing from present inventive concept.The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be do not depart from technical solution of the present invention content, according to technical spirit of the present invention, within the spirit and principles in the present invention, to any simple amendment that above embodiment is done, equivalent replacement and improvement etc., within the protection domain all still belonging to technical solution of the present invention.
Claims (5)
1. a diode temperature sensor, is characterized in that: comprise the first to the 8th resistance, the first to the 6th electric capacity, diode, triode and first, second amplifier, wherein,
One end of described first resistance is connected through the positive input terminal of the second electric capacity with the first amplifier, and the other end of the first resistance is connected with the positive pole of diode, one end of the 4th resistance respectively successively after the first electric capacity, the second resistance, the other end of the 4th resistance is connected with one end of the 8th resistance, the negative input end of the second amplifier respectively, and the other end of the 8th resistance is connected with the output terminal of the second amplifier through the 6th electric capacity, the positive input terminal of the second amplifier respectively with one end of the 6th resistance, one end of 7th resistance is connected, the other end ground connection of the 7th resistance, the other end of the 6th resistance respectively with the negative pole of diode, the collector of triode is connected, the base stage of triode is connected with the output terminal of the first amplifier through the 3rd electric capacity, the emitter of triode respectively with one end of the 4th electric capacity, one end of 5th resistance is connected, the other end of the 4th electric capacity is connected with the negative input end of the first amplifier through the 3rd resistance, the other end of the 5th resistance is also connected with the first amplifier through the 5th electric capacity.
2. a kind of diode temperature sensor as claimed in claim 1, is characterized in that: the concrete model of described first amplifier, the second amplifier is TA75458.
3. a kind of diode temperature sensor as claimed in claim 1, is characterized in that: described diode is silicon diode.
4. a kind of diode temperature sensor as claimed in claim 3, is characterized in that: described silicon diode, and voltage stabilizing value is lower than being negative temperature coefficient when 5V; Voltage stabilizing value is more than being positive temperature coefficient (PTC) when 5V.
5. a kind of diode temperature sensor as claimed in claim 1, is characterized in that: the output terminal of described second amplifier is also connected with voltage table.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510407715.3A CN105021298A (en) | 2015-07-13 | 2015-07-13 | Diode temperature transducer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510407715.3A CN105021298A (en) | 2015-07-13 | 2015-07-13 | Diode temperature transducer |
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| CN105021298A true CN105021298A (en) | 2015-11-04 |
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| CN201510407715.3A Pending CN105021298A (en) | 2015-07-13 | 2015-07-13 | Diode temperature transducer |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2500507B2 (en) * | 1991-10-03 | 1996-05-29 | 株式会社精工舎 | Temperature detection circuit |
| EP1046890A1 (en) * | 1999-04-21 | 2000-10-25 | EM Microelectronic-Marin SA | Temperature level detection circuit |
| CN101144741A (en) * | 2006-09-15 | 2008-03-19 | 三菱电机株式会社 | Temperature detector |
| CN104359569A (en) * | 2014-10-31 | 2015-02-18 | 成都利邦科技有限公司 | Temperature detecting circuit of combination lock |
| CN204373797U (en) * | 2014-12-25 | 2015-06-03 | 西南交通大学 | A kind of silicon diode temperature metering circuit |
-
2015
- 2015-07-13 CN CN201510407715.3A patent/CN105021298A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2500507B2 (en) * | 1991-10-03 | 1996-05-29 | 株式会社精工舎 | Temperature detection circuit |
| EP1046890A1 (en) * | 1999-04-21 | 2000-10-25 | EM Microelectronic-Marin SA | Temperature level detection circuit |
| CN101144741A (en) * | 2006-09-15 | 2008-03-19 | 三菱电机株式会社 | Temperature detector |
| CN104359569A (en) * | 2014-10-31 | 2015-02-18 | 成都利邦科技有限公司 | Temperature detecting circuit of combination lock |
| CN204373797U (en) * | 2014-12-25 | 2015-06-03 | 西南交通大学 | A kind of silicon diode temperature metering circuit |
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Application publication date: 20151104 |
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