CN105006521B - 一种基于PFH/n‑SiC有机‑无机异质结构的紫外光电探测器件 - Google Patents
一种基于PFH/n‑SiC有机‑无机异质结构的紫外光电探测器件 Download PDFInfo
- Publication number
- CN105006521B CN105006521B CN201510297310.9A CN201510297310A CN105006521B CN 105006521 B CN105006521 B CN 105006521B CN 201510297310 A CN201510297310 A CN 201510297310A CN 105006521 B CN105006521 B CN 105006521B
- Authority
- CN
- China
- Prior art keywords
- sic
- pfh
- preparation
- organic
- inorganic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010408 film Substances 0.000 claims abstract description 30
- 238000002360 preparation method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010931 gold Substances 0.000 claims abstract description 8
- 229910052737 gold Inorganic materials 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 62
- 238000004544 sputter deposition Methods 0.000 claims description 42
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 11
- 239000013077 target material Substances 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- OHWIQIVPGPMWHV-UHFFFAOYSA-N 1,2-dihexyl-9h-fluorene Chemical class C1=CC=C2C3=CC=C(CCCCCC)C(CCCCCC)=C3CC2=C1 OHWIQIVPGPMWHV-UHFFFAOYSA-N 0.000 claims description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000002203 pretreatment Methods 0.000 claims description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 10
- 238000012360 testing method Methods 0.000 abstract description 9
- -1 9 one dihexyl fluorenes Chemical class 0.000 abstract description 2
- 238000004528 spin coating Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 17
- 239000000523 sample Substances 0.000 description 12
- 238000001816 cooling Methods 0.000 description 9
- 230000005622 photoelectricity Effects 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011953 bioanalysis Methods 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000013102 re-test Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510297310.9A CN105006521B (zh) | 2015-05-29 | 2015-05-29 | 一种基于PFH/n‑SiC有机‑无机异质结构的紫外光电探测器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510297310.9A CN105006521B (zh) | 2015-05-29 | 2015-05-29 | 一种基于PFH/n‑SiC有机‑无机异质结构的紫外光电探测器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105006521A CN105006521A (zh) | 2015-10-28 |
CN105006521B true CN105006521B (zh) | 2017-08-11 |
Family
ID=54379116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510297310.9A Active CN105006521B (zh) | 2015-05-29 | 2015-05-29 | 一种基于PFH/n‑SiC有机‑无机异质结构的紫外光电探测器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105006521B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108682717B (zh) * | 2018-06-07 | 2020-06-09 | 哈尔滨工业大学 | 一种金刚石位置灵敏探测器的制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102931272A (zh) * | 2012-11-23 | 2013-02-13 | 中国科学院微电子研究所 | 一种具有增益的紫外探测器结构及其制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1433155A2 (en) * | 2001-04-30 | 2004-06-30 | Lumimove, Inc. | Electroluminescent devices fabricated with encapsulated light emitting polymer particles |
TWI273719B (en) * | 2005-12-30 | 2007-02-11 | Ind Tech Res Inst | Nanocrystal and photovoltaics applying the same |
-
2015
- 2015-05-29 CN CN201510297310.9A patent/CN105006521B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102931272A (zh) * | 2012-11-23 | 2013-02-13 | 中国科学院微电子研究所 | 一种具有增益的紫外探测器结构及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105006521A (zh) | 2015-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105742398B (zh) | 基于β‑Ga2O3/SiC异质结薄膜的日盲型紫外探测器及其制备方法 | |
Ke et al. | Low temperature annealed ZnO film UV photodetector with fast photoresponse | |
CN106449889B (zh) | 基于氧化镓/CuAlO2异质结日盲型紫外探测器的制备方法 | |
Huang et al. | Realization of a self-powered InGaZnO MSM UV photodetector using localized surface fluorine plasma treatment | |
CN105655434A (zh) | 一种基于氧化镓纳米线阵列的紫外探测器件及其制备方法 | |
CN105552160A (zh) | 基于金纳米粒子增强氧化镓薄膜的紫外探测器件及其制备方法 | |
CN108767028B (zh) | 基于氧化镓异质结结构的柔性日盲紫外探测器及其制备方法 | |
CN105789377A (zh) | 一种基于氧化镓薄膜的新型火焰探测器及其制备方法 | |
CN108535337A (zh) | 基于氧化锡/氧化镓异质结纳米阵列的柔性气敏传感器及其制备方法 | |
Zhao et al. | Stoichiometry control of sputtered zinc oxide films by adjusting Ar/O2 gas ratios as electron transport layers for efficient planar perovskite solar cells | |
CN108767050A (zh) | 基于氧化亚铜/氧化镓pn结的柔性紫外光电探测器及其制备方法 | |
CN105489694A (zh) | 氧化锌/硅p-n异质结紫外光探测器及其制备方法 | |
CN109755342A (zh) | 一种直接型x射线探测器及其制备方法 | |
CN105806487B (zh) | 基于表面等离激元增强Ga2O3薄膜的紫外火焰探测器及其制备方法 | |
CN111564509B (zh) | 一种全氧化物柔性光电探测器及其制备方法与应用 | |
CN107425090B (zh) | 垂直型光电探测器及其制备方法 | |
CN111864080A (zh) | 一种二维有机无机杂化钙钛矿晶体光电探测器及其制备方法 | |
Singh et al. | A study of Al: ZnO based MSM UV sensors with Ni metal electrodes | |
CN113206168B (zh) | 可见光探测器及制备方法 | |
CN105006521B (zh) | 一种基于PFH/n‑SiC有机‑无机异质结构的紫外光电探测器件 | |
Jiang et al. | MgxZn1− xO solar-blind photodetectors fabricated by RF magnetron sputtering with combinatorial targets | |
CN107819044B (zh) | 一种硫化锑基光电探测器的制备方法 | |
Samarasekara et al. | Photocurrent enhancement of dc sputtered copper oxide thin films | |
CN106206829B (zh) | 一种基于锰掺杂氮化铜薄膜的可见光探测器 | |
CN107393253A (zh) | 基于异质结薄膜的远程电气火灾监测系统及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Sun Wangqi Inventor before: Jin Kangkang |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170706 Address after: 322200, sand hill, 25 village, South Village street, Pujiang County, Zhejiang Province Applicant after: Sun Wangqi Address before: 322200 Zhejiang Xian County of Pujiang province village like a Golden Pavilion Street District No. 63 Applicant before: Jin Kangkang |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191113 Address after: No.1, Chuangye building, 1750 Shengli West Road, Yuhui District, Bengbu City, Anhui Province Patentee after: Bengbu xiaoshuren Software Technology Co., Ltd Address before: 322200, sand hill, 25 village, South Village street, Pujiang County, Zhejiang Province Patentee before: Sun Wangqi |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200509 Address after: No.2, Jinma Road, Maqun Science Park, Maqun street, Qixia District, Nanjing City, Jiangsu Province Patentee after: Nanjing Yongji Photoelectric Technology Co., Ltd Address before: No.1, Chuangye building, 1750 Shengli West Road, Yuhui District, Bengbu City, Anhui Province Patentee before: Bengbu xiaoshuren Software Technology Co., Ltd |