CN105006426A - 生长在GaAs衬底上的InAs量子点及其制备方法 - Google Patents
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Abstract
本发明公开了一种生长在GaAs衬底上的InAs量子点,由下至上依次包括GaAs衬底、InAs量子点层、GaAs盖层和In纳米结构层。本发明的另一目的在于提供上述生长在GaAs衬底上的InAs量子的制备方法:(1)对GaAs衬底进行清洗;(2)对GaAs衬底进行除气和脱氧预处理;(3)在GaAs衬底上生长InAs量子点层:(4)在InAs量子点层上覆盖GaAs盖层;(5)在GaAs盖层表面沉积In纳米结构层。本发明制备的生长在GaAs衬底上的InAs量子点,极大提高了InAs量子点的光致发光强度,且制备方法简单、成本较低,是一种制备强光致发光强度的高密度InAs量子点的有效方法。
Description
技术领域
本发明涉及半导体光电子材料与器件技术领域,特别涉及一种生长在GaAs衬底上的InAs量子点及其制备方法。
背景技术
随着制备高质量自组织量子点技术的发展,半导体量子点在量子光学,量子通信,激光器以及太阳电池等方面的应用研究越来越引起人们的兴趣。量子点在三维方向实现了对载流子的限制,导致载流子能量在三个维度上量子化而出现分立能级,呈现出某些类似原子的壳层结构能级特性。量子点的种种新奇性质使其在许多领域具有广阔的应用前景,比如量子点单光子光源,量子点中间带多结太阳电池等。一个稳定、高亮度的单光子源作为一种新型光源,必定会为光谱学和量子信息领域带来很多的应用,如:随机数产生器、弱吸收测量、线性光学计算、量子密钥分配以及量子存储等。但是,目前生长的量子点由于量子点内缺陷,以及量子点尺寸的非均匀性(多模效应)等因素的影响,其发光强度普遍较低,限制了量子点的进一步应用。因此研究如何在采用自组织方法制备出具有高发光强度的高密度InAs量子点,提高其光学性能对于未来量子点在器件中的广泛应用十分重要的指导意义。
发明内容
为了克服现有技术的上述缺点与不足,本发明的目的在于提供一种生长在GaAs衬底上的InAs量子点,光致发光强度高。
本发明的另一目的在于提供上述生长在GaAs衬底上的InAs量子点的制备方法。
本发明的目的通过以下技术方案实现:
生长在GaAs衬底上的InAs量子点,由下至上依次包括GaAs(115)A衬底、InAs量子点层、GaAs盖层和In纳米结构层;其中(115)A表示(115)晶面上Ga原子的悬键数目要多于As原子。
所述InAs量子点层中InAs量子点的密度为1×1010-8×1010cm-2;量子点的平均高度为6-10纳米,平均直径为10-20纳米。
所述GaAs盖层的厚度为4-10纳米。
所述In纳米结构的平均直径为40-60纳米。
生长在GaAs衬底上的InAs量子点的制备方法,包括以下步骤:
(1)对GaAs(115)A衬底进行清洗;
(2)对GaAs(115)A衬底进行除气和脱氧预处理;
(3)在GaAs(115)A衬底上生长InAs量子点层:
(4)在InAs量子点层上覆盖GaAs盖层;
(5)在GaAs盖层表面沉积In纳米结构层。
步骤(1)所述对GaAs(115)A衬底进行清洗,具体为:
GaAs(115)A衬底依次在三氯乙烯、丙酮、乙醇超声清洗,去除表面有机物,最后在去离子水中超声清洗后用氮气吹干。
步骤(2)所述对GaAs(115)A衬底进行除气和脱氧预处理,具体为:
送入分子束外延系统进样室预除气半小时,完成除气后送入生长室,在砷束流保护下,高温退火去除衬底表面的氧化膜层,其中脱氧过程中砷源的温度为250-350℃,衬底温度为570-620℃,时间为5-10分钟。
步骤(3)所述在GaAs(115)A衬底上生长InAs量子点层,具体为:
利用分子束外延生长InAs量子点,生长过程中铟源温度为700-810℃,砷源温度为270-300℃,衬底温度为450-550℃,生长时间为8-20s。
步骤(4)所述在InAs量子点层上覆盖GaAs盖层,具体为:
采用分子束外延生长GaAs盖层,生长过程中的镓源温度为800-950℃,砷源温度为250-350℃,衬底温度为350-500℃,生长时间为200-350s。
步骤(5)所述在GaAs盖层表面沉积In纳米结构层,具体为:
采用电子束蒸发方式生长,生长过程中电子束的功率为65-90W,衬底温度为400-600℃,生长时间为200-350s。
与现有技术相比,本发明具有以下优点和有益效果:
(1)本发明通过将在GaAs(115)A衬底上采用MBE法生长InAs量子点,并在覆盖GaAs盖层后生长In纳米结构,由于In局域表面等离激元与量子点激子发光的相互耦合作用,可以明显提高InAs量子点的光致发光强度。当在GaAs盖层表面生长In纳米结构后,InAs量子点的发光可以快速转移并激发金属In局域表面等离激元,In局域表面等离激元被激发后,在In纳米颗粒周围会形成强的局域电场,根据费米黄金规则,这种强的局域电场可以提高InAs量子点中电子-空穴对的辐射复合速率,因此本发明制备的高密度InAs量子点光致发光发光强度得到明显的提高。
(2)本发明的制备方法简单有效,成本较低,增强效果明显。
附图说明
图1为本发明的实施例1的生长在GaAs衬底上的InAs量子点的结构示意图。
图2为本发明的实施例1的生长在GaAs衬底上的InAs量子点的制备方法的流程图。
图3为本发明的实施例1的生长在GaAs衬底上的InAs量子点的原子力显微镜照片。
图4为本发明的实施例1的生长在GaAs衬底上的InAs量子点在覆盖In纳米结构前后的室温光致发光谱。
具体实施方式
下面结合实施例,对本发明作进一步地详细说明,但本发明的实施方式不限于此。
实施例1
如图1所示,本实施例的生长在GaAs衬底上的InAs量子点,由下至上依次包括GaAs衬底1、InAs量子点层2、GaAs盖层3和In纳米结构层4。
如图2所示,本实施例的生长在GaAs衬底上的InAs量子点的制备方法,包括以下步骤:
(1)对GaAs(115)A衬底进行清洗:
GaAs(115)A衬底依次在三氯乙烯、丙酮、乙醇超声清洗10分钟,去除表面有机物,最后在去离子水中超声清洗15分钟后用氮气吹干;
(2)GaAs(115)A衬底进行除气和脱氧预处理:送入分子束外延系统进样室预除气半小时,完成除气后送入生长室,在砷束流保护下,高温退火去除衬底表面的氧化膜层,其中脱氧过程中砷源的温度为270℃,衬底温度为600℃,时间为10分钟;
(3)GaAs(115)A衬底上生长InAs量子点层:利用分子束外延生长InAs量子点,生长过程中铟源温度为800℃,砷源温度为300℃,衬底温度为510℃,生长时间为12s;
如图3所示,本实施例的InAs量子点层中InAs量子点的密度为2×1010cm-2,量子点的平均高度为8纳米,平均直径为12纳米;
(4)在InAs量子点层上覆盖GaAs盖层:采用分子束外延生长GaAs盖层,生长过程中的镓源温度为880℃,砷源温度为290℃,衬底温度为450℃,生长时间为300s;GaAs盖层的厚度为8纳米;
(5)在GaAs盖层表面沉积In纳米结构层:采用电子束蒸发方式生长,生长过程中电子束的功率为80W,衬底温度为450℃,生长时间为200s;所述In纳米结构的平均直径为50纳米。
图4为覆盖In纳米结构前后的高密度InAs量子点的光致发光谱,光谱在77K条件下测试,其中InAs量子点In为本发明的覆盖In纳米结构后的高密度InAs量子点。从图中可以看出,对GaAs(115)A衬底上直接生长的InAs量子点,光致发光谱中以衬底发光为主,还可以观察到微弱的浸润层发光(830纳米),对应于InAs量子点的光致发光十分微弱,即使将其强度提高6倍后仍十分弱。而当在InAs量子点表面覆盖In纳米结构后,一方面可以观察到明显的浸润层发光,同时InAs量子点的激子发光强度明显提高,发光强度相对覆盖In纳米结构前提高150倍。
在InAs量子点表面覆盖GaAs盖层后生长In纳米结构,由于In局域表面等离激元与量子点激子发光的相互耦合作用,可以明显提高InAs量子点的光致发光强度。当在GaAs盖层表面生长In纳米结构后,InAs量子点的激子发光可以快速转移并激发金属In局域表面等离激元,而In局域表面等离激元被激发后,在In纳米颗粒周围会形成强的局域电场,根据费米黄金规则,这种强的局域电场可以提高InAs量子点中电子-空穴对的辐射复合速率,因此本发明制备的高密度InAs量子点光致发光发光强度得到明显的提高。
实施例2
本实施例的生长在GaAs衬底上的InAs量子点的制备方法,包括以下步骤:
(1)对GaAs(115)A衬底进行清洗:
GaAs(115)A衬底依次在三氯乙烯、丙酮、乙醇超声清洗10分钟,去除表面有机物,最后在去离子水中超声清洗15分钟后用氮气吹干;
(2)对GaAs(115)A衬底进行除气和脱氧预处理:送入分子束外延系统进样室预除气半小时,完成除气后送入生长室,在砷束流保护下,高温退火去除衬底表面的氧化膜层,其中脱氧过程中砷源的温度为270℃,衬底温度为620℃,时间为10分钟;
(3)在GaAs(115)A衬底上生长InAs量子点层:利用分子束外延生长InAs量子点,生长过程中铟源温度为810℃,砷源温度为300℃,衬底温度为550℃,生长时间为20s;
InAs量子点层中InAs量子点的密度为2×1010cm-2,量子点的平均高度为10纳米,平均直径为20纳米;
(4)在InAs量子点层上覆盖GaAs盖层:采用分子束外延生长GaAs盖层,生长过程中的镓源温度为950℃,砷源温度为350℃,衬底温度为350℃,生长时间为350s;所述GaAs盖层的厚度为10纳米;
(5)在GaAs盖层表面沉积In纳米结构层:采用电子束蒸发方式生长,生长过程中电子束的功率为65W,衬底温度为400℃,生长时间为350s;所述In纳米结构的平均直径为60纳米。
本实施制备得到的光致发光的高密度InAs量子点的测试结果与实施例1相似,在此不再赘述。
实施例3
本实施例的生长在GaAs衬底上的InAs量子点的制备方法,包括以下步骤:
(1)对GaAs(115)A衬底进行清洗:
GaAs(115)A衬底依次在三氯乙烯、丙酮、乙醇超声清洗10分钟,去除表面有机物,最后在去离子水中超声清洗15分钟后用氮气吹干;
(2)GaAs(115)A衬底进行除气和脱氧预处理:送入分子束外延系统进样室预除气半小时,完成除气后送入生长室,在砷束流保护下,高温退火去除衬底表面的氧化膜层,其中脱氧过程中砷源的温度为270℃,衬底温度为570℃,时间为5分钟;
(3)GaAs(115)A衬底上生长InAs量子点层:利用分子束外延生长InAs量子点,生长过程中铟源温度为700℃,砷源温度为270℃,衬底温度为450℃,生长时间为8s;
本实施例的InAs量子点层中InAs量子点的密度为2×1010cm-2,量子点的平均高度为6纳米,平均直径为10纳米;
(4)在InAs量子点层上覆盖GaAs盖层:采用分子束外延生长GaAs盖层,生长过程中的镓源温度为800℃,砷源温度为250℃,衬底温度为550℃,生长时间为200s;所述GaAs盖层的厚度为4纳米;
(5)在GaAs盖层表面沉积In纳米结构层:采用电子束蒸发方式生长,生长过程中电子束的功率为90W,衬底温度为600℃,生长时间为200s;所述In纳米结构的平均直径为40纳米。
本实施制备得到的光致发光的高密度InAs量子点的测试结果与实施例1相似,在此不再赘述。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受所述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (10)
1.生长在GaAs衬底上的InAs量子点,其特征在于,由下至上依次包括GaAs(115)A衬底、InAs量子点层、GaAs盖层和In纳米结构层。
2.根据权利要求1所述的生长在GaAs衬底上的InAs量子点,其特征在于,所述InAs量子点层中InAs量子点的密度为1×1010-8×1010cm-2;量子点的平均高度为6-10纳米,平均直径为10-20纳米。
3.根据权利要求1所述的生长在GaAs衬底上的InAs量子点,其特征在于,所述GaAs盖层的厚度为4-10纳米。
4.根据权利要求1所述的生长在GaAs衬底上的InAs量子点,其特征在于,所述In纳米结构的平均直径为40-60纳米。
5.生长在GaAs衬底上的InAs量子点的制备方法,其特征在于,包括以下步骤:
(1)对GaAs(115)A衬底进行清洗;
(2)对GaAs(115)A衬底进行除气和脱氧预处理;
(3)在GaAs(115)A衬底上生长InAs量子点层:
(4)在InAs量子点层上覆盖GaAs盖层;
(5)在GaAs盖层表面沉积In纳米结构层。
6.根据权利要求5所述的生长在GaAs衬底上的InAs量子点的制备方法,其特征在于,步骤(1)所述对GaAs(115)A衬底进行清洗,具体为:
GaAs(115)A衬底依次在三氯乙烯、丙酮、乙醇超声清洗,去除表面有机物,最后在去离子水中超声清洗后用氮气吹干。
7.根据权利要求5所述的生长在GaAs衬底上的InAs量子点的制备方法,其特征在于,步骤(2)所述对GaAs(115)A衬底进行除气和脱氧预处理,具体为:
送入分子束外延系统进样室预除气半小时,完成除气后送入生长室,在砷束流保护下,高温退火去除衬底表面的氧化膜层,其中脱氧过程中砷源的温度为250-350℃,衬底温度为570-620℃,时间为5-10分钟。
8.根据权利要求5所述的生长在GaAs衬底上的InAs量子点的制备方法,其特征在于,步骤(3)所述在GaAs(115)A衬底上生长InAs量子点层,具体为:
利用分子束外延生长InAs量子点,生长过程中铟源温度为700-810℃,砷源温度为270-300℃,衬底温度为450-550℃,生长时间为8-20s。
9.根据权利要求5所述的生长在GaAs衬底上的InAs量子点的制备方法,其特征在于,步骤(4)所述在InAs量子点层上覆盖GaAs盖层,具体为:
采用分子束外延生长GaAs盖层,生长过程中的镓源温度为800-950℃,砷源温度为250-350℃,衬底温度为350-500℃,生长时间为200-350s。
10.根据权利要求5所述的生长在GaAs衬底上的InAs量子点的制备方法,其特征在于,步骤(5)所述在GaAs盖层表面沉积In纳米结构层,具体为:
采用电子束蒸发方式生长,生长过程中电子束的功率为65-90W,衬底温度为400-600℃,生长时间为200-350s。
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