CN105006362B - A kind of thin film capacitor preparation method of peelable substrate - Google Patents
A kind of thin film capacitor preparation method of peelable substrate Download PDFInfo
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Abstract
The invention discloses a kind of thin film capacitor preparation methods of peelable substrate.Its processing step is：1. the certain thickness polyurethane glue-line of spin coating on substrate, and cured with ultraviolet light；2. using collosol and gel or sputtering method preparation media layer；3. electrode layer is prepared, and obtain patterned electrodes figure layer using laser ablation using sputtering method；4. being sequentially prepared, and termination electrode is prepared at the both ends of capacitor long side in the way of dielectric layer/electrode figure layer/dielectric layer/electrode figure layer again, the single-layer or multi-layer thin film capacitor of interdigital structure is formed；5. above-mentioned thin film capacitor is put into resistance furnace, made annealing treatment in certain temperature, make dielectric layer crystallization and burn up organic layer, realize thin film capacitor from the stripping on substrate.The stripping of device and substrate can be realized without using acid or the corrosive deposits such as alkali by the present invention, have the characteristics that it is simple for process, be easy to industrialized, particularly suitable for the various single-layer or multi-layer film components of making.
Description
Technical field
The invention belongs to film component preparing technical fields, are related to a kind of thin film capacitor preparation side of peelable substrate
Method, more particularly to a kind of preparation method of the single-layer or multi-layer thin film capacitor of peelable substrate.
Background technology
With the development of electronic technology, for semiconductor fabrication process after micron develops to nanometer stage, chip integration is big
Width is promoted, and required component of arranging in pairs or groups to it also correspondingly proposes higher requirement.Such as the development of field of mobile communication, it is desirable that
Intel's central processing unit acp chip further reduces, and makes component, particularly chip multilayer ceramic capacitor（MLCC）, face
Face the problem of following：The available effective capacitance area of substrate back is greatly reduced, but component demand is significantly increased；Together
When surface-pasted space it is very limited.For these problems, Intel company, which proposes, uses small size surface mount or embedding
Enter the solution of formula passive device, it is desirable that multilayer ceramic capacitor used（MLCC）In the feelings for not reducing capacitance and reliability
Under condition, reduce the size as far as possible.
It is one of trend of technology development using film process manufacture electronic component to reach above-mentioned target, meanwhile,
In order to be further reduced the volume of device, need that thin-film device is stripped out from substrate and is directly mounted.Existing skill
Art first deposits one layer of sacrificial metal layer on substrate mainly by the way of sacrificial metal layer is manufactured by film process,
Carries out selective corrosion sacrificial layer with acid or alkali again after film or device are carried out and obtain the film of peelable substrate, but this
For method for being medium and using metal or nonmetal oxide as the thin film capacitor of electrode using barium phthalate base material, it is first right to need
Thin-film material could remove sacrificial layer with selective corrosion liquid after being protected, and while sacrificial layer is corroded, dielectric layer and
Electrode layer also has and can increase difficulty of the film from substrate desquamation by partial corrosion very much.
In order to improve above-mentioned deficiency, the present invention using polyurethane organic material as the sacrificial layer between substrate and film,
And by burning up organic layer while thin-film device is annealed, realize film or device from the stripping on substrate.Compared to above-mentioned
The mode of sacrificial metal layer, can be to avoid using acid or the solution such as alkali, while can also avoid acid or alkali to dielectric layer and electrode
The damage of layer, it is convenient and inexpensive to have the characteristics that.
Invention content
The purpose of the present invention is intended to provide a kind of preparation method of the thin film capacitor of peelable substrate, can by this method
To realize thin film capacitor from the quick and inexpensive stripping on substrate, this method can be effectively reduced the body of thin film capacitor
Product facilitates thin film capacitor attachment or embedded other places, is conducive to improve the integrated level of chip or integrated circuit.
The present invention solve above-mentioned technical problem technical solution be：
A kind of thin film capacitor preparation method of peelable substrate is prepared including glue-line, prepared by dielectric layer, electrode figure layer system
Prepared by standby, composite bed, stripping process, and processing step is：
1. prepared by glue-line：The certain thickness polyurethane glue-line of spin coating on substrate, and cured with ultraviolet light；
2. prepared by dielectric layer：Using collosol and gel or sputtering method preparation media layer；
3. prepared by electrode figure layer：Electrode layer is prepared, and obtain patterned electrodes figure layer using laser ablation using sputtering method；
4. prepared by composite bed：It is sequentially prepared, and in electricity in the way of dielectric layer/electrode figure layer/dielectric layer/electrode figure layer again
The both ends of container long side prepare termination electrode, form the single-layer or multi-layer thin film capacitor of interdigital structure；
5. it removes：Above-mentioned thin film capacitor is put into resistance furnace, is made annealing treatment in certain temperature, makes dielectric layer crystallization
And organic layer is burnt up, realize thin film capacitor from the stripping on substrate.
Above-described substrate includes aluminium oxide, quartz, silicon chip, zirconium oxide, strontium titanate monocrystal piece.
Above-described electrode figure layer is metal or nonmetallic inorganic oxide film material, including Ni, Ag, Cu, Ti, Au
Or the simple metal of Pt or its composition metal and ITO, AZO, SnO2Oxide；
Above-described dielectric layer is included with BaTiO3And with BaTiO3For all kinds of dielectric film materials of base, including
PZT, X7R porcelain powder, Y5V porcelain powder, X8R porcelain powder inorganic non-metallic sull.
Above-described dielectric layer can be one layer or multilayer.
The thickness of above-described polyamine lipid layer is 0.2~5 μm, and the thickness of the individual layer of the electrode layer is 0.1~2 μm,
The thickness in monolayer of the dielectric layer is 0.2~3 μm.
Films described above capacitor annealing temperature is 500~800 DEG C, and the time is 15~120 minutes.
The advantages and positive effects of the present invention：
1st, polyurethane organic material is used as the sacrificial layer between substrate and film using this method, and can be thin
Film annealing process removes organic layer, so as to fulfill the stripping of film and substrate.
2nd, this method entire stripping process woth no need to use acid or alkali solution, can to avoid acid or aqueous slkali to medium
The damage of layer and electrode layer.
3rd, the thin film capacitor at this method peeling liner bottom prepares more existing film lift-off technology and compares, and has at low cost, work
Skill is simple, is easy to industrialized advantage, particularly suitable for film component, particularly single-layer or multi-layer film component from substrate
On stripping.
Description of the drawings
Fig. 1：Scheme from the section SEM of the thin film capacitor after substrate desquamation.
Specific embodiment
For a better understanding of the present invention, with reference to the embodiment content that the present invention is furture elucidated.
Embodiment 1
A kind of thin film capacitor preparation method of peelable substrate, specific implementation step are as follows：
（1）A layer thickness is coated by spin coating mode in alumina substrate and is 2.5 μm of polyamine lipid layer, and is passed through ultraviolet
Photocuring；
（2）Magnetron sputtering method deposition thickness is used as 3 μm of BaTiO3Dielectric film；
（3）Using magnetron sputtering method, deposition thickness is 2 μm of ITO electrode film layer on above-mentioned dielectric layer, and passes through sharp
ITO electrode Thinfilm pattern is turned to the capacitance electrode size of the MLCC of 0201 size by lithographic methods；
（4）Magnetron sputtering method is used to be sequentially depositing thickness as 3 μm of BaTiO3Dielectric film and 2 μm of ITO electrode film,
And laser ablation patterns ITO electrode layer according to 0201 specification electrode for capacitors staggered floor construction, lay equal stress on composite dielectric layer and
Electrode layer 3 times finally in the termination electrode of capacitor long side both ends sputtering Ag, forms the plural layers capacitance with interdigital structure
Device；
（5）Above-mentioned plural layers capacitor is put into resistance furnace, is annealed 30 minutes under conditions of 600 DEG C, realizes film
Capacitor is from the stripping of substrate, and the thin-membrane section SEM figures after stripping are as shown in Figure 1.
Embodiment 2
A kind of thin film capacitor preparation method of peelable substrate, specific implementation step are as follows：
（1）A layer thickness is coated by spin coating mode in alumina substrate and is 1.5 μm of polyamine lipid layer, and is passed through ultraviolet
Photocuring；
（2）Using preparing metals ion concentrations such as metatitanic acid fourth fat, barium acetate, glacial acetic acid, acetylacetone,2,4-pentanediones as the molten of 0.5mol/L
Glue prepares in above-mentioned polyamine lipid layer 2 μm of BaTiO by spin coating mode3Dielectric film；
（3）Using magnetron sputtering method, deposition thickness is 0.2 μm of Ag electrode thin film layers on above-mentioned dielectric layer, and passes through
Laser etching method is by the capacitance electrode size of the MLCC of patterned 0201 size of Ag electrode films；
（4）Above-mentioned sol-gal process is used to be sequentially prepared thickness as 0.5 μm of BaTiO3Dielectric film and 0.2 μm of Ag electricity
Very thin films, and laser ablation patterns Ag electrode layers according to 0201 specification electrode for capacitors staggered floor construction, and repeats to be situated between
Matter layer and electrode layer 30 times finally in the termination electrode of capacitor long side both ends sputtering Ag, form the multi-layer thin with interdigital structure
Membrane capacitance；
（5）Above-mentioned plural layers capacitor is put into resistance furnace, is annealed 60 minutes under conditions of 550 DEG C, realizes film
Capacitor is from the stripping of substrate.
Embodiment 3
A kind of thin film capacitor preparation method of peelable substrate, specific implementation step are as follows：
（1）A layer thickness is coated by spin coating mode in quartz substrate and is 0.5 μm of polyamine lipid layer, and passes through ultraviolet light
Curing；
（2）Using the preparing metals ion concentrations such as metatitanic acid fourth fat, acetic acid zirconium, lead acetate, glacial acetic acid, acetylacetone,2,4-pentanedione as
The colloidal sol of 0.8mol/L prepares in above-mentioned polyamine lipid layer 3 μm of PZT dielectric films by spin coating mode；
（3）Using magnetron sputtering method, deposition thickness is 2 μm of Cu electrode thin film layers on above-mentioned dielectric layer, and passes through sharp
Lithographic methods are by the capacitance electrode size of the MLCC of patterned 0402 size of Cu electrode films；
（4）Above-mentioned sol-gal process is used to be sequentially prepared thickness as 3 μm of PZT dielectric films and 2 μm of Cu electrode films,
And laser ablation patterns Cu electrode layers according to 0402 specification electrode for capacitors staggered floor construction, lay equal stress on composite dielectric layer and electricity
Pole layer 50 times finally in the termination electrode of capacitor long side both ends sputtering Ag, forms the plural layers capacitor with interdigital structure；
（5）Above-mentioned plural layers capacitor is put into resistance furnace, is annealed 40 minutes under conditions of 500 DEG C, realizes film
Capacitor is from the stripping of substrate.
Embodiment 4
A kind of thin film capacitor preparation method of peelable substrate, specific implementation step are as follows：
（1）A layer thickness is coated by spin coating mode in silicon chip substrate and is 3 μm of polyamine lipid layer, and passes through UV light
Change；
（2）Magnetron sputtering method deposition thickness is used as 2 μm of X7R dielectric films；
（3）Using magnetron sputtering method, deposition thickness is 0.1 μm of Pt electrode thin film layers on above-mentioned dielectric layer, and passes through
Laser etching method is by the capacitance electrode size of the MLCC of patterned 0201 size of Pt electrode films；
（4）Magnetron sputtering method is used to be sequentially depositing thickness as 1.0 μm of X7R dielectric films and 0.1 μm of Pt electrode films,
And laser ablation patterns Pt electrode layers according to 0201 specification electrode for capacitors staggered floor construction, lay equal stress on composite dielectric layer and electricity
Pole layer 100 times finally in the termination electrode of capacitor long side both ends sputtering Ag, forms the plural layers capacitance with interdigital structure
Device；
（5）Above-mentioned plural layers capacitor is put into resistance furnace, is annealed 50 minutes under conditions of 800 DEG C, realizes film
Capacitor is from the stripping of substrate.
Embodiment 5
A kind of thin film capacitor preparation method of peelable substrate, specific implementation step are as follows：
（1）A layer thickness is coated by spin coating mode in zirconia substrate and is 5 μm of polyamine lipid layer, and passes through ultraviolet light
Curing；
（2）Magnetron sputtering method deposition thickness is used as 2 μm of Y5V dielectric films；
（3）Using magnetron sputtering method, deposition thickness is 0.5 μm of Pt/Ti electrode thin film layers on above-mentioned dielectric layer（Wherein
Ti layer thickness is 20nm）, and pass through laser etching method by the capacitance of the MLCC of patterned 0603 size of Pt/Ti electrode films
Electrode size；
（4）Magnetron sputtering method is used to be sequentially depositing thickness thin for the Pt/Ti electrodes of 2 μm of Y5V dielectric films and 0.5 μm
Film, and laser ablation patterns Pt/Ti electrode layers according to 0603 specification electrode for capacitors staggered floor construction, composite dielectric of laying equal stress on
Layer and electrode layer 50 times finally in the termination electrode of capacitor long side both ends sputtering Ag, form the plural layers with interdigital structure
Capacitor；
（5）Above-mentioned plural layers capacitor is put into resistance furnace, is annealed 120 minutes under conditions of 500 DEG C, realizes film
Capacitor is from the stripping of substrate.
Embodiment 6
A kind of thin film capacitor preparation method of peelable substrate, specific implementation step are as follows：
（1）A layer thickness is coated by spin coating mode on strontium titanate monocrystal piece substrate and is 0.2 μm of polyamine lipid layer, and is led to
Cross ultraviolet light curing；
（2）With metatitanic acid fourth fat, acetic acid zirconium, strontium acetate, barium acetate, glacial acetic acid, acetylacetone,2,4-pentanedione etc. for raw material, by X8R porcelain powder
The colloidal sol that preparing metal ion concentration is 0.6mol/L is formulated, 0.2 μm is prepared in above-mentioned polyamine lipid layer by spin coating mode
X8R dielectric films；
（3）Using magnetron sputtering method, deposition thickness is 0.2 μm of ITO electrode film layer on above-mentioned dielectric layer, and passes through
ITO electrode Thinfilm pattern is turned to the capacitance electrode size of the MLCC of 0402 size by laser etching method；
（4）Above-mentioned sol-gal process is used to be sequentially prepared thickness as 0.2 μm of X8R dielectric films and 0.2 μm of ITO electrode
Film, and laser ablation patterns ITO electrode layer according to 0402 specification electrode for capacitors staggered floor construction, composite dielectric of laying equal stress on
Layer and electrode layer 30 times finally in the termination electrode of capacitor long side both ends sputtering Ag, form the plural layers with interdigital structure
Capacitor；
（5）Above-mentioned plural layers capacitor is put into resistance furnace, is annealed 70 minutes under conditions of 620 DEG C, realizes film
Capacitor is from the stripping of substrate.
Embodiment 7
A kind of thin film capacitor preparation method of peelable substrate, specific implementation step are as follows：
（1）A layer thickness is coated by spin coating mode in quartz substrate and is 0.5 μm of polyamine lipid layer, and passes through ultraviolet light
Curing；
（2）Using preparing metals ion concentrations such as metatitanic acid fourth fat, barium acetate, glacial acetic acid, acetylacetone,2,4-pentanediones as the molten of 1.0mol/L
Glue prepares in above-mentioned polyamine lipid layer 2.5 μm of BaTiO by spin coating mode3Dielectric film；
（3）Using magnetron sputtering method, deposition thickness is 0.3 μm of ITO/Au combination electrode film layers on above-mentioned dielectric layer
（Wherein Au electrode layers thicknesses are 0.1 μm）, and pass through laser etching method by patterned 0603 size of ITO/Au electrode films
MLCC capacitance electrode size；
（4）Above-mentioned sol-gal process is used to be sequentially prepared thickness as 2.5 μm of BaTiO3Dielectric film and 0.3 μm of ITO/
Au electrode films, and laser ablation patterns ITO/Au electrode layers according to 0603 specification electrode for capacitors staggered floor construction,
Lay equal stress on composite dielectric layer and electrode layer 10 times, finally in the termination electrode of capacitor long side both ends sputtering Ag, being formed has interdigital structure
Plural layers capacitor；
（5）Above-mentioned plural layers capacitor is put into resistance furnace, is annealed 15 minutes under conditions of 750 DEG C, realizes film
Capacitor is from the stripping of substrate.
Embodiment 8
A kind of thin film capacitor preparation method of peelable substrate, specific implementation step are as follows：
（1）A layer thickness is coated by spin coating mode in silicon chip substrate and is 0.8 μm of polyamine lipid layer, and passes through ultraviolet light
Curing；
（2）Magnetron sputtering method deposition thickness is used as 2.5 μm of PZT dielectric films；
（3）Using magnetron sputtering method, deposition thickness is 0.3 μm of Ni electrode thin film layers on above-mentioned dielectric layer, and passes through
Laser etching method is by the capacitance electrode size of the MLCC of patterned 0402 size of Ni electrode films；
（4）Magnetron sputtering method is used to be sequentially depositing thickness as 1.8 μm of PZT dielectric films and 0.3 μm of Ni electrode films,
And laser ablation patterns Ni electrode layers according to 0402 specification electrode for capacitors staggered floor construction, lay equal stress on composite dielectric layer and electricity
Pole layer 10 times finally in the termination electrode of capacitor long side both ends sputtering Ag, forms the plural layers capacitor with interdigital structure；
（5）Above-mentioned plural layers capacitor is put into resistance furnace, is annealed 35 minutes under conditions of 580 DEG C, realizes film
Capacitor is from the stripping of substrate.
Claims (2)
1. a kind of thin film capacitor preparation method of peelable substrate, it is characterised in that：It is prepared including organic glue-line, dielectric layer system
Prepared by standby, electrode figure layer, prepared by composite bed, stripping process, and processing step is：
1. prepared by glue-line：The certain thickness polyurethane glue-line of spin coating on substrate, and cured with ultraviolet light；
2. prepared by dielectric layer：Using collosol and gel or sputtering method preparation media layer；
3. prepared by electrode figure layer：Electrode layer is prepared, and obtain patterned electrodes figure layer using laser ablation using sputtering method；
4. prepared by composite bed：It is sequentially prepared, and in capacitor in the way of dielectric layer/electrode figure layer/dielectric layer/electrode figure layer again
The both ends of long side prepare termination electrode, form the single-layer or multi-layer thin film capacitor of interdigital structure；
5. it removes：Above-mentioned thin film capacitor is put into resistance furnace, is made annealing treatment in certain temperature, make dielectric layer crystallization and is burnt
Fall organic layer, realize thin film capacitor from the stripping on substrate；
The thickness of the polyamine lipid layer is 0.2~5 μm, and the thickness of the individual layer of the electrode layer is 0.1~2 μm, Jie
The thickness in monolayer of matter layer is 0.2~3 μm；
The thin film capacitor annealing temperature is 500~800 DEG C, and the time is 15~120 minutes；
The substrate includes aluminium oxide, quartz, silicon chip, zirconium oxide, strontium titanate monocrystal piece；
The electrode figure layer is metal or nonmetallic inorganic oxide film material；
The dielectric layer is BaTiO3Or PZT dielectric film materials；
The dielectric layer is one or more layers.
2. a kind of thin film capacitor preparation method of peelable substrate, it is characterised in that：Specific implementation step is as follows：
（1）A layer thickness is coated by spin coating mode in alumina substrate and is 1.5 μm of polyamine lipid layer, and passes through UV light
Change；
（2）Using metatitanic acid fourth fat, barium acetate, glacial acetic acid, acetylacetone,2,4-pentanedione preparing metal ion concentration as the colloidal sol of 0.5mol/L, pass through
Spin coating mode prepares 2 μm of BaTiO in above-mentioned polyamine lipid layer3Dielectric film；
（3）Using magnetron sputtering method, deposition thickness is 0.2 μm of Ag electrode thin film layers on above-mentioned dielectric layer, and passes through laser
Lithographic method is by the capacitance electrode size of the MLCC of patterned 0201 size of Ag electrode films；
（4）Above-mentioned sol-gal process is used to be sequentially prepared thickness as 0.5 μm of BaTiO3Dielectric film and 0.2 μm of Ag electrodes are thin
Film, and laser ablation patterns Ag electrode layers according to 0201 specification electrode for capacitors staggered floor construction, composite dielectric layer of laying equal stress on
With electrode layer 30 times, finally in the termination electrode of capacitor long side both ends sputtering Ag, the plural layers electricity with interdigital structure is formed
Container；
（5）Above-mentioned plural layers capacitor is put into resistance furnace, is annealed 60 minutes under conditions of 550 DEG C, realizes thin-film capacitor
Device is from the stripping of substrate.
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| CN106158373A (en) * | 2016-08-01 | 2016-11-23 | 合肥佳瑞林电子技术有限公司 | A kind of preparation method of thin film capacitor |
| CN111116965A (en) * | 2019-12-25 | 2020-05-08 | 西安交通大学 | Flexible stripping method for silk fibroin-based biosensor |
| WO2022040987A1 (en) * | 2020-08-26 | 2022-03-03 | 中国科学院深圳先进技术研究院 | Preparation method for thin-film capacitor, and thin-film capacitor |
| CN114220659A (en) * | 2021-11-26 | 2022-03-22 | 武汉理工大学 | Oxide-reinforced inorganic dielectric amorphous composite film with high energy storage density and high breakdown strength and preparation method thereof |
| CN114121494B (en) * | 2021-11-30 | 2023-04-18 | 上海交通大学 | 3D multilayer high-dielectric-constant high-power-density supercapacitor and micromachining method |
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