CN106158373A - A kind of preparation method of thin film capacitor - Google Patents
A kind of preparation method of thin film capacitor Download PDFInfo
- Publication number
- CN106158373A CN106158373A CN201610617283.3A CN201610617283A CN106158373A CN 106158373 A CN106158373 A CN 106158373A CN 201610617283 A CN201610617283 A CN 201610617283A CN 106158373 A CN106158373 A CN 106158373A
- Authority
- CN
- China
- Prior art keywords
- thin film
- film capacitor
- layer
- temperature
- described step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 54
- 239000003990 capacitor Substances 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 238000000137 annealing Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- 238000005096 rolling process Methods 0.000 claims abstract description 16
- 230000001681 protective effect Effects 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000012212 insulator Substances 0.000 claims abstract description 8
- 238000000608 laser ablation Methods 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 230000014759 maintenance of location Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 8
- 239000012528 membrane Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention provides the preparation method of a kind of thin film capacitor, relate to electronic devices and components manufacture technology field, prepare electrode layer and intensification/annealing including evaporated metal layer, sputtering method, be deposited with layer of metal thin film on insulator film surface, and coiling is film rolling；Film rolling is placed on rotation and puts vacuum chamber on frame into around driving, and vacuum chamber is carried out evacuation, use ion sputtering process to prepare electrode layer, and utilize laser ablation to obtain patterned electrodes figure layer；Thin film capacitor is put into resistance furnace, in the environment of being passed through protective gas, carries out cascade raising temperature process, then; make annealing treatment again; when temperature reaches room temperature, then by thin film capacitor from rotating around the taking-up driven frame, cut into the film strip needed for thin-film capacitor.Present invention process is simple, be prone to industrialized feature, and real cost of production is less, and thin film capacitor prepared by this method has higher non-oxidizability and ductility, the most also has larger capacitance amount, meets the light-weighted requirement of product.
Description
Technical field
The present invention relates to electronic devices and components manufacture technology field, particularly relate to the preparation method of a kind of thin film capacitor.
Background technology
Capacitor is in accordance with the difference of medium, and its kind is a lot, such as: electrolyte capacitance, papery electric capacity, thin-film capacitor,
Ceramic condenser, mica capacitor, air electric capacity etc..But the most used in sound appliances, surely belong to electrolysis condenser and thin
Film (Film) capacitor.Electrochemical capacitor is used in the place needing capacitance the biggest, the such as filtering of main power source part mostly
Electric capacity, except filtering in addition to, and also serve as storage electric energy be used.Thin-film capacitor is the most extensively used in the commissure of analogue signal,
The places such as the bypass (reciprocal cross is even) of power supply noise.
Thin film capacitor, owing to having the most excellent characteristic, is therefore the capacitor of a kind of excellent performance.It main
As follows etc. property: nonpolarity, insulation impedance is the highest, frequency characteristic excellent (frequency response is broad), and dielectric loss is the least.Based on
Above advantage, so thin film capacitor is widely used on analog circuit.Especially in the part of signal commissure, it is necessary to make
Good by frequency characteristic, the capacitor that dielectric loss is extremely low, can guarantee that signal, when transmitting, does not has the biggest distortion situation
Occur.
Summary of the invention
The invention provides the preparation method of a kind of thin film capacitor, including dispensing, ball milling, screening, pelletize, be pressed into
Type, sinter and cool down.
The preparation method of a kind of thin film capacitor, prepares electrode and intensification/annealing treatment including evaporated metal layer, sputtering method
Reason, the preparation method of thin film capacitor is as follows:
(1) evaporated metal layer: be deposited with layer of metal thin film on insulator film surface, and coiling is film rolling；
(2) sputtering method prepares electrode layer: film rolling is placed on rotation around driving and puts vacuum chamber on frame into, and enters vacuum chamber
Row evacuation, uses ion sputtering process to prepare electrode layer, and utilizes laser ablation to obtain patterned electrodes figure layer；
(3) heat up/annealing: thin film capacitor is put into resistance furnace, rises step by step in the environment of being passed through protective gas
Temperature processes, and then, then makes annealing treatment, when temperature reaches room temperature, then by thin film capacitor from rotating around driving taking frame
Go out, cut into the film strip needed for thin-film capacitor.
Preferably, in described step (1) metal of metallic film include Ni, Ag, Cu, Ti, Au or Pt simple metal or
Its composition metal.
Preferably, in described step (2), the vacuum in vacuum chamber is 105-100 Pa。
Preferably, in described step (2), electrode layers thickness is 10-30 nm.
Preferably, in described step (3), warming temperature is 600-800 DEG C, and temperature retention time is 30-60 min；Annealing temperature
For 90-100 DEG C, the time is 200-210 min.
Preferably, in described step (3), protective gas is Ne, Xe, Ar or their mixed gas.
Beneficial effect: the invention provides the preparation method of a kind of thin film capacitor, relates to electronic devices and components manufacturing technology
Field, prepares electrode layer and intensification/annealing including evaporated metal layer, sputtering method, is deposited with one layer on insulator film surface
Metallic film, and coiling is film rolling；Film rolling is placed on rotation and puts vacuum chamber on frame into around driving, and vacuum chamber is entered
Row evacuation, uses ion sputtering process to prepare electrode layer, and utilizes laser ablation to obtain patterned electrodes figure layer；By thin-film capacitor
Resistance furnace put into by device, carries out cascade raising temperature process, then, then make annealing treatment, treat temperature in the environment of being passed through protective gas
When degree reaches room temperature, then by thin film capacitor from rotating around the taking-up driven frame, cut into the film strip needed for thin-film capacitor.This
Invented technology is simple, be prone to industrialized feature, and real cost of production is less, and thin film capacitor prepared by this method has relatively
High non-oxidizability and ductility, the most also have larger capacitance amount, meets the light-weighted requirement of product.
Detailed description of the invention
For the technological means making the present invention realize, creation characteristic, reach purpose and be easy to understand with effect, below in conjunction with
Detailed description of the invention, is expanded on further the present invention.
Embodiment 1:
The preparation method of a kind of thin film capacitor, prepares electrode and intensification/annealing including evaporated metal layer, sputtering method, thin
The preparation method of membrane capacitance is as follows:
(1) evaporated metal layer: be deposited with layer of metal thin film on insulator film surface, and coiling is film rolling；
(2) sputtering method prepares electrode layer: film rolling is placed on rotation around driving and puts vacuum chamber on frame into, and enters vacuum chamber
Row evacuation, uses ion sputtering process to prepare electrode layer, and utilizes laser ablation to obtain patterned electrodes figure layer；
(3) heat up/annealing: thin film capacitor is put into resistance furnace, rises step by step in the environment of being passed through protective gas
Temperature processes, and then, then makes annealing treatment, when temperature reaches room temperature, then by thin film capacitor from rotating around driving taking frame
Go out, cut into the film strip needed for thin-film capacitor.
Wherein, in described step (1) metal of metallic film include the simple metal of Ni, Ag, Cu, Ti, Au or Pt or its
Composition metal；In described step (2), the vacuum in vacuum chamber is 10 Pa；In described step (2), electrode layers thickness is 10
nm；In described step (3), warming temperature is 600 DEG C, and temperature retention time is 30 min；Annealing temperature is 90 DEG C, and the time is 200
min；In described step (3), protective gas is Ne.
Embodiment 2:
The preparation method of a kind of thin film capacitor, prepares electrode and intensification/annealing including evaporated metal layer, sputtering method, thin
The preparation method of membrane capacitance is as follows:
(1) evaporated metal layer: be deposited with layer of metal thin film on insulator film surface, and coiling is film rolling；
(2) sputtering method prepares electrode layer: film rolling is placed on rotation around driving and puts vacuum chamber on frame into, and enters vacuum chamber
Row evacuation, uses ion sputtering process to prepare electrode layer, and utilizes laser ablation to obtain patterned electrodes figure layer；
(3) heat up/annealing: thin film capacitor is put into resistance furnace, rises step by step in the environment of being passed through protective gas
Temperature processes, and then, then makes annealing treatment, when temperature reaches room temperature, then by thin film capacitor from rotating around driving taking frame
Go out, cut into the film strip needed for thin-film capacitor.
Wherein, in described step (1) metal of metallic film include the simple metal of Ni, Ag, Cu, Ti, Au or Pt or its
Composition metal；In described step (2), the vacuum in vacuum chamber is 1000 Pa；In described step (2), electrode layers thickness is 10
nm；In described step (3), warming temperature is 700 DEG C, and temperature retention time is 50 min；Annealing temperature is 95 DEG C, and the time is 205
min；In described step (3), protective gas is Xe.
Embodiment 3:
The preparation method of a kind of thin film capacitor, prepares electrode and intensification/annealing including evaporated metal layer, sputtering method, thin
The preparation method of membrane capacitance is as follows:
(1) evaporated metal layer: be deposited with layer of metal thin film on insulator film surface, and coiling is film rolling；
(2) sputtering method prepares electrode layer: film rolling is placed on rotation around driving and puts vacuum chamber on frame into, and enters vacuum chamber
Row evacuation, uses ion sputtering process to prepare electrode layer, and utilizes laser ablation to obtain patterned electrodes figure layer；
(3) heat up/annealing: thin film capacitor is put into resistance furnace, rises step by step in the environment of being passed through protective gas
Temperature processes, and then, then makes annealing treatment, when temperature reaches room temperature, then by thin film capacitor from rotating around driving taking frame
Go out, cut into the film strip needed for thin-film capacitor.
Wherein, in described step (1) metal of metallic film include the simple metal of Ni, Ag, Cu, Ti, Au or Pt or its
Composition metal；In described step (2), the vacuum in vacuum chamber is 100 Pa；In described step (2), electrode layers thickness is 30
nm；In described step (3), warming temperature is 800 DEG C, and temperature retention time is 60 min；Annealing temperature is 100 DEG C, and the time is 210
min；In described step (3), protective gas is the mixed gas of Ne and Ar.
| Non-oxidizability | Ductility | Capacitance | |
| Embodiment 1 | 90% | 80% | 73% |
| Embodiment 2 | 98% | 95% | 88% |
| Embodiment 3 | 85% | 90% | 76% |
| Existing technical parameter | 75% | 78% | 66% |
According to above table data, embodiment 2 uses the preparation technology of thin film capacitor of the present invention and existing
Technical parameter compares, and has higher non-oxidizability and ductility, the most also has larger capacitance amount, meet product light-weighted
Requirement.
The invention provides the preparation method of a kind of thin film capacitor, relate to electronic devices and components manufacture technology field, including
Evaporated metal layer, sputtering method prepare electrode layer and intensification/annealing, are deposited with layer of metal thin film on insulator film surface,
And coiling is film rolling；Film rolling is placed on rotation and puts vacuum chamber on frame into around driving, and vacuum chamber is carried out evacuation,
Use ion sputtering process to prepare electrode layer, and utilize laser ablation to obtain patterned electrodes figure layer；Thin film capacitor is put into electricity
Resistance stove, carries out cascade raising temperature process in the environment of being passed through protective gas, then, then makes annealing treatment, treat that temperature reaches normal
Wen Shi, then by thin film capacitor from rotating around the taking-up driven frame, cut into the film strip needed for thin-film capacitor.Present invention process
Simply, being prone to industrialized feature, real cost of production is less, and thin film capacitor prepared by this method has higher antioxygen
The property changed and ductility, the most also have larger capacitance amount, meet the light-weighted requirement of product.
The foregoing is only embodiments of the invention, not thereby limit the scope of the claims of the present invention, every utilize this
Equivalent structure or equivalence flow process that bright description is made convert, or are directly or indirectly used in other relevant technology necks
Territory, is the most in like manner included in the scope of patent protection of the present invention.
Claims (6)
1. the preparation method of a thin film capacitor, it is characterised in that include that evaporated metal layer, sputtering method prepare electrode and liter
Temperature/annealing, the preparation method of thin film capacitor is as follows:
(1) evaporated metal layer: be deposited with layer of metal thin film on insulator film surface, and coiling is film rolling；
(2) sputtering method prepares electrode layer: film rolling is placed on rotation around driving and puts vacuum chamber on frame into, and enters vacuum chamber
Row evacuation, uses ion sputtering process to prepare electrode layer, and utilizes laser ablation to obtain patterned electrodes figure layer；
(3) heat up/annealing: thin film capacitor is put into resistance furnace, rises step by step in the environment of being passed through protective gas
Temperature processes, and then, then makes annealing treatment, when temperature reaches room temperature, then by thin film capacitor from rotating around driving taking frame
Go out, cut into the film strip needed for thin-film capacitor.
The manufacturing process of automotive hub the most according to claim 1, it is characterised in that metallic film in described step (1)
Metal include simple metal or its composition metal of Ni, Ag, Cu, Ti, Au or Pt.
The manufacturing process of automotive hub the most according to claim 1 and 2, it is characterised in that vacuum chamber in described step (2)
Indoor vacuum is 105-100 Pa。
The manufacturing process of automotive hub the most according to claim 1, it is characterised in that electrode thickness in described step (2)
Degree is 10-30 nm.
The manufacturing process of automotive hub the most according to claim 1, it is characterised in that warming temperature in described step (3)
For 600-800 DEG C, temperature retention time is 30-60 min；Annealing temperature is 90-100 DEG C, and the time is 200-210 min.
The manufacturing process of automotive hub the most according to claim 1, it is characterised in that protective gas in described step (3)
For Ne, Xe, Ar or their mixed gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610617283.3A CN106158373A (en) | 2016-08-01 | 2016-08-01 | A kind of preparation method of thin film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610617283.3A CN106158373A (en) | 2016-08-01 | 2016-08-01 | A kind of preparation method of thin film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106158373A true CN106158373A (en) | 2016-11-23 |
Family
ID=57328151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610617283.3A Withdrawn CN106158373A (en) | 2016-08-01 | 2016-08-01 | A kind of preparation method of thin film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106158373A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108680273A (en) * | 2018-05-21 | 2018-10-19 | 佛山市顺德区中山大学研究院 | A kind of temperature sensor and preparation method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1637973A (en) * | 2003-12-30 | 2005-07-13 | E.I.内穆尔杜邦公司 | Thin film capacitors on ceramic |
| CN101131896A (en) * | 2006-08-10 | 2008-02-27 | E.I.内穆尔杜邦公司 | Method of forming individual formed-on-foil thin capacitors |
| CN101461016A (en) * | 2006-08-28 | 2009-06-17 | 松下电器产业株式会社 | Metallization film capacitor |
| CN101996767A (en) * | 2009-08-10 | 2011-03-30 | 小岛压力加工工业株式会社 | Film capacitor and method of producing the same |
| CN103928233A (en) * | 2014-03-18 | 2014-07-16 | 天津大学 | Thin film capacitor with stable electrode structure and preparation method thereof |
| CN104867674A (en) * | 2015-04-15 | 2015-08-26 | 赫得纳米科技(昆山)有限公司 | Method for preparing metalized thin film of novel thin-film capacitor |
| CN105006362A (en) * | 2015-07-28 | 2015-10-28 | 桂林电子科技大学 | Preparation method for thin-film capacitor with strippable substrate |
| CN105070505A (en) * | 2015-08-26 | 2015-11-18 | 六和电子（江西）有限公司 | High-efficiency production technology of thin-film capacitor |
| CN105261657A (en) * | 2015-10-30 | 2016-01-20 | 中国振华集团云科电子有限公司 | Manufacturing process for MIS thin-film capacitors |
-
2016
- 2016-08-01 CN CN201610617283.3A patent/CN106158373A/en not_active Withdrawn
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1637973A (en) * | 2003-12-30 | 2005-07-13 | E.I.内穆尔杜邦公司 | Thin film capacitors on ceramic |
| CN101131896A (en) * | 2006-08-10 | 2008-02-27 | E.I.内穆尔杜邦公司 | Method of forming individual formed-on-foil thin capacitors |
| CN101461016A (en) * | 2006-08-28 | 2009-06-17 | 松下电器产业株式会社 | Metallization film capacitor |
| CN101996767A (en) * | 2009-08-10 | 2011-03-30 | 小岛压力加工工业株式会社 | Film capacitor and method of producing the same |
| CN103928233A (en) * | 2014-03-18 | 2014-07-16 | 天津大学 | Thin film capacitor with stable electrode structure and preparation method thereof |
| CN104867674A (en) * | 2015-04-15 | 2015-08-26 | 赫得纳米科技(昆山)有限公司 | Method for preparing metalized thin film of novel thin-film capacitor |
| CN105006362A (en) * | 2015-07-28 | 2015-10-28 | 桂林电子科技大学 | Preparation method for thin-film capacitor with strippable substrate |
| CN105070505A (en) * | 2015-08-26 | 2015-11-18 | 六和电子（江西）有限公司 | High-efficiency production technology of thin-film capacitor |
| CN105261657A (en) * | 2015-10-30 | 2016-01-20 | 中国振华集团云科电子有限公司 | Manufacturing process for MIS thin-film capacitors |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108680273A (en) * | 2018-05-21 | 2018-10-19 | 佛山市顺德区中山大学研究院 | A kind of temperature sensor and preparation method thereof |
| CN108680273B (en) * | 2018-05-21 | 2020-08-04 | 佛山市顺德区中山大学研究院 | Temperature sensor and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103219153B (en) | A kind of high pressure resistant high density capacitors and preparation method thereof | |
| CN104870080A (en) | Hydrogen-releasing film | |
| CN107022739A (en) | The manufacture method of sputter coating molybdenum rotary target material | |
| CN106571173B (en) | High temperature resistant composite transparent conductive film, preparation method and application | |
| CN108926908B (en) | Preparation method of corrosion-resistant high-strength metal fiber felt | |
| CN106158373A (en) | A kind of preparation method of thin film capacitor | |
| CN103928233A (en) | Thin film capacitor with stable electrode structure and preparation method thereof | |
| CN107068398B (en) | A kind of preparation method and applications of graphene-silver electrode composite | |
| CN105568229B (en) | A kind of preparation method of nitrogen doped titanium dioxide film | |
| CN101658929B (en) | Cupro-nickel alloy powder used for preparing terminal electrode of chip-type multilayer ceramic capacitor (MLCC) | |
| CN105449168A (en) | Preparation method of metal matrix solid-state thin-film lithium battery cathode with interface modification layer | |
| KR101232717B1 (en) | A Ti-In-Zn-O TCO and its based metal-inserted 3-layered TCO, their fabricating method | |
| CN103922727B (en) | Doping ZrO2the CaTiO of nano wire3ceramic electrode material and preparation method and application | |
| CN103643085B (en) | Embed type film resistor material and preparation method thereof | |
| CN103374706A (en) | Method for preparing polycrystalline silicon film | |
| CN102013294A (en) | High-resistance value metal oxide film resistor and manufacture method thereof | |
| CN104766894A (en) | Method for improving photoelectric property of dielectric/metal/dielectric electrodes | |
| CN111587463B (en) | Preparation method of thermistor copper electrode composite layer | |
| CN110983254B (en) | Porous WO3Preparation method and product of electrochromic film and application thereof | |
| JP2017183330A (en) | Voltage nonlinear resistive element and manufacturing method thereof | |
| CN102242339A (en) | Preparation method of oxygen-stabilized yttrium fluoride film | |
| CN100440401C (en) | Method for fabricating tantalum capacitor and products | |
| CN105489699A (en) | Preparation method of AZO/Ag/AZO composite membrane for front electrode of solar thin-film cell | |
| CN107077974A (en) | Hydrogen discharges film | |
| CN1240869C (en) | Annealing method of high voltage electronic aluminium foil product |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20161123 |