CN104867674A - Method for preparing metalized thin film of novel thin-film capacitor - Google Patents
Method for preparing metalized thin film of novel thin-film capacitor Download PDFInfo
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- CN104867674A CN104867674A CN201510176105.7A CN201510176105A CN104867674A CN 104867674 A CN104867674 A CN 104867674A CN 201510176105 A CN201510176105 A CN 201510176105A CN 104867674 A CN104867674 A CN 104867674A
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Abstract
The invention discloses a method for preparing a metalized thin film of a novel thin-film capacitor, which comprises the steps of (1) evaporating a layer of metal thin film at the surface of an insulator thin film, cutting the metal thin film into a thin film belt required by the thin-film capacitor, and coiling the thin film belt into a thin film roll; (2) placing the thin film roll on which metal spraying end face coating is required to be carried out on a carrier, enabling the thin film roll to get into a vacuum cavity, and carrying out vacuum pumping on the vacuum cavity; and (3) pumping a rare gas into the vacuum cavity, enabling the carrier carrying the thin film roll to pass through a cathode body at a constant speed, applying high-voltage direct current to the cathode body at the same time, and forming a plasma region near the cathode body, wherein positive ions in the region are absorbed by a target negative electrode of the cathode body, the surface is impacted, and target atoms sputter out of an original target body and deposit at the metal spraying end face of the thin film roll moving below the cathode body at the constant speed so as to form a metal coating, so that the metallized coating is formed.
Description
Technical field
The present invention relates to a kind of preparation method of novel thin film electric capacity metallized film, belong to metallized film manufacturing technology field.
Background technology
The existing manufacturing process of metallic thin film for thin film capacitor: metallized film works as electrode with metal forming, at poly-ethyl ester, polypropylene, the insulator film such as polystyrene or Merlon surface evaporation layer of metal film, metal ingredient is aluminium, zinc and other conducting metals substantially, then carries out point film strip being cut to the required winding of film capacitor.
Existing capacitor metallized film has following problem, can not well overcome:
(1) feature that metallized film is the most outstanding has good self-healing property, and in other words after the weak place of electricity of its medium is breakdown, the high-energy produced due to short circuit makes to puncture the neighbouring coat of metal rapid loss formation clear area, again recovers insulation.This characteristic requirements metalized film has thinner coating.Because coating is thin, film end face conductive layer also thin (about about 100nm), the contact area causing end face metal spraying material to become with capacitor conductive is like this little, and cause large contact resistance, the loose contact of metal spraying face, cause resistance to rush of current ability, through repeated charge, cause condenser failure;
(2) due to the particle of metal spraying material larger (about about 2um), and the gap between coiling material is a film thickness, general several to tens microns, the metal spraying material of such end face and the combination of coating are a kind of false attachments, very large contact resistance is had between metal spraying material and thin film coating, be that junction can generate heat at big current, thus cause capacitor can not resistance to big current;
(3) if in order to reduce the contact resistance between end face gilding layer and coating, just need the coating of metal spraying side to thicken, but after thickening, can cause the resistance to drops of electric capacity, self-healing ability declines;
(4) existing industry is in order to overcome the above problems, and have 2 kinds of methods, a. is when cutting, and by the method for Wave-cut, after cutting like this, the contact area of gilding layer and coating can increase very limited; B. in metal spraying side, plate stiffened edge, so also can only increase 1-2 contact-making surface doubly; Or thoroughly cannot solve the contradiction of withstand voltage and resistance to electric current.
Summary of the invention
the technical solution adopted in the present invention is to provide a kind of preparation method of novel thin film electric capacity metallized film, by setting up metal layer at film strip metal spraying end face, metal layer on the metal layer of end face and film strip combines, after increasing end plane metal layer, metal layer on film strip and metal spraying conductive layers make contact area are increased, and attachment and conductive cross-sectional area also increase thereupon.
In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is:
A preparation method for novel thin film electric capacity metallized film, comprises the steps:
(1) at insulator film surface evaporation layer of metal film, its point is cut to the film strip needed for thin-film capacitor, and coiling is film roll;
(2) enter vacuum chamber by needing the film roll doing metal spraying end face coating to be placed on carrier, and vacuum chamber is vacuumized;
(3) rare gas is passed into in vacuum chamber, the carrier being loaded with film roll is at the uniform velocity passed through cathode, and target body applies high voltage direct current simultaneously, ion plasma is formed near cathode, cation in region attract by cathode target negative pole, and clash into its surface, target atom sputters former target material body, the metal spraying end face deposition of the film roll of at the uniform velocity movement below cathode forms the coat of metal, thus defines metallization plated film.
The preparation method of aforesaid a kind of novel thin film electric capacity metallized film, it is characterized in that: after in step (2), film roll is placed on and carrier enters vacuum chamber, carry out just vacuumizing to it, after reaching 5.0E-02mbar, carrier moves to high vacuum chamber, and to do vacuum static, makes vacuum degree reach 1.0E-05mbar.
The preparation method of aforesaid a kind of novel thin film electric capacity metallized film, is characterized in that: the coat of metal that described step (3) is formed in the metal spraying end face deposition of film roll is 10nm-30nm.
The preparation method of aforesaid a kind of novel thin film electric capacity metallized film, is characterized in that: described cathode target is Al, Zn or other metal materials.
The preparation method of aforesaid a kind of novel thin film electric capacity metallized film, is characterized in that: described insulator film is the one in poly-ethyl ester, polypropylene, polystyrene or Merlon.
The preparation method of aforesaid a kind of novel thin film electric capacity metallized film, is characterized in that: the rare gas in described step (3) is Ar.
The invention has the beneficial effects as follows:
(1) large area improves the conductive attach area of gilding layer and electrode, improves the capability value of relatively original electric capacity;
(2) can by suitably thinning for the metal electrode layer thickness of metallized film, after thinning, the withstand voltage of electric capacity can increase, withstand voltage relative increase, capacitance voltage can be raised when using electric capacity, thus make the energy lift voltage added value of electric capacity square doubly, if ensure original capacity requirement, just can the thickness of basement membrane be fallen thin, thus save basement membrane cost, the volume of electric capacity can reduce, and saves encapsulating material, reduces the volume requirements of final products.
Accompanying drawing explanation
Fig. 1 is the film strip schematic diagram that the preparation method of a kind of novel thin film electric capacity of the present invention metallized film makes.
Embodiment
Below in conjunction with Figure of description, the present invention is further illustrated.
The invention provides a kind of preparation method of novel thin film electric capacity metallized film, it is characterized in that: comprise the steps:
(1) at insulator film surface evaporation layer of metal film, its point is cut to the film strip needed for thin-film capacitor, and coiling is film roll;
(2) enter vacuum chamber by needing the film roll doing metal spraying end face coating to be placed on carrier, and vacuum chamber is vacuumized;
(3) rare gas is passed into in vacuum chamber, the carrier being loaded with film roll is at the uniform velocity passed through cathode, and target body applies high voltage direct current simultaneously, ion plasma is formed near cathode, cation in region attract by cathode target negative pole, and clash into its surface, target atom sputters former target material body, the metal spraying end face deposition of the film roll of at the uniform velocity movement below cathode forms the coat of metal, thus defines metallization plated film.
In the present embodiment, cathode target is Al, Zn or other metal materials, and insulator film is the one in poly-ethyl ester, polypropylene, polystyrene or Merlon.
By increasing the link of an end face coating after plated film is cut, by the mode of vacuum splashing and plating film, layer of metal conducting film is plated at point metal spraying end face that needs of the film cut volume, the metal level of about 10nm-30nm is plated at film strip end face, film strip is made to need metal spraying end face insulator originally, attachment becomes conduction end face, then after doing winding, metal spraying applies.
This novel metal film reaches nanoscale because of the compactness of electroplating of its end face, can combine completely with the nanoscale coating of membrane surface, (just define the extension of metal electrode layer on film strip, expand to whole end face, carry out winding end face metal spraying again, the contact area of gilding layer and basement membrane electrode layer totally adds more than hundred times, to solve on gilding layer and film strip metal level because of contact angle too small, in charge and discharge process, metal layer combines generation self-healing breaking phenomena.
and can by suitably thinning for the metal electrode layer thickness of metallized film, after thinning, the withstand voltage of electric capacity can increase, withstand voltage relative increase, capacitance voltage can be raised when using electric capacity, thus make the energy lift voltage added value of electric capacity square doubly, if ensure original capacity requirement, just can the thickness of basement membrane be fallen thin, thus save basement membrane cost, the volume of electric capacity can reduce, and saves encapsulating material, reduces the volume requirements of final products.
After film roll is placed on and carrier enters vacuum chamber in step (2), carry out just vacuumizing to it, after reaching 5.0E-02mbar, carrier moves to high vacuum chamber, and to do vacuum static, makes vacuum degree reach 1.0E-05mbar.
Rare gas in step (3) is Ar.
In sum, the invention provides a kind of preparation method of novel thin film electric capacity metallized film, by setting up metal layer at film strip metal spraying end face, metal layer on the metal layer of end face and film strip combines, after increasing end plane metal layer, metal layer on film strip and metal spraying conductive layers make contact area are increased, and attachment and conductive cross-sectional area also increase thereupon.
More than show and describe general principle of the present invention, principal character and advantage.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is by appending claims and equivalent circle thereof.
Claims (6)
1. a preparation method for novel thin film electric capacity metallized film, is characterized in that: comprise the steps:
(1) at insulator film surface evaporation layer of metal film, its point is cut to the film strip needed for thin-film capacitor, and coiling is film roll;
(2) enter vacuum chamber by needing the film roll doing metal spraying end face coating to be placed on carrier, and vacuum chamber is vacuumized;
(3) rare gas is passed into in vacuum chamber, the carrier being loaded with film roll is at the uniform velocity passed through cathode, and target body applies high voltage direct current simultaneously, ion plasma is formed near cathode, cation in region attract by cathode target negative pole, and clash into its surface, target atom sputters former target material body, the metal spraying end face deposition of the film roll of at the uniform velocity movement below cathode forms the coat of metal, thus defines metallization plated film.
2. the preparation method of a kind of novel thin film electric capacity metallized film according to claim 1, it is characterized in that: after in step (2), film roll is placed on and carrier enters vacuum chamber, carry out just vacuumizing to it, after reaching 5.0E-02mbar, carrier moves to high vacuum chamber, and to do vacuum static, makes vacuum degree reach 1.0E-05mbar.
3. the preparation method of a kind of novel thin film electric capacity metallized film according to claim 2, is characterized in that: the coat of metal that described step (3) is formed in the metal spraying end face deposition of film roll is 10nm-30nm.
4. the preparation method of a kind of novel thin film electric capacity metallized film according to claim 3, is characterized in that: described cathode target is Al, Zn or other metal materials.
5. the preparation method of a kind of novel thin film electric capacity metallized film according to claim 4, is characterized in that: described insulator film is the one in poly-ethyl ester, polypropylene, polystyrene or Merlon.
6. the preparation method of a kind of novel thin film electric capacity metallized film according to claim 5, is characterized in that: the rare gas in described step (3) is Ar.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510176105.7A CN104867674A (en) | 2015-04-15 | 2015-04-15 | Method for preparing metalized thin film of novel thin-film capacitor |
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| CN201510176105.7A CN104867674A (en) | 2015-04-15 | 2015-04-15 | Method for preparing metalized thin film of novel thin-film capacitor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158373A (en) * | 2016-08-01 | 2016-11-23 | 合肥佳瑞林电子技术有限公司 | A kind of preparation method of thin film capacitor |
| CN106409507A (en) * | 2016-10-20 | 2017-02-15 | 无锡宸瑞新能源科技有限公司 | Thin-film capacitor for high-temperature-resistant and high-humidity-resistant application and processing method thereof |
| CN113345714A (en) * | 2021-07-05 | 2021-09-03 | 广东省塑镕科技有限公司 | Method for manufacturing box-packed metallized film capacitor |
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| CN1463451A (en) * | 2001-06-08 | 2003-12-24 | 松下电器产业株式会社 | Multilayer fim capacitor and prodn. method thereof |
| JP2009277830A (en) * | 2008-05-14 | 2009-11-26 | Panasonic Corp | Metallized film capacitor |
| CN102174689A (en) * | 2011-04-01 | 2011-09-07 | 浙江大学 | FZO/metal/FZO transparent conductive film and preparation method thereof |
| CN202678109U (en) * | 2012-07-16 | 2013-01-16 | 佛山市意壳电容器有限公司 | High square resistance metallization polymer film capacitor |
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2015
- 2015-04-15 CN CN201510176105.7A patent/CN104867674A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1463451A (en) * | 2001-06-08 | 2003-12-24 | 松下电器产业株式会社 | Multilayer fim capacitor and prodn. method thereof |
| JP2009277830A (en) * | 2008-05-14 | 2009-11-26 | Panasonic Corp | Metallized film capacitor |
| CN102174689A (en) * | 2011-04-01 | 2011-09-07 | 浙江大学 | FZO/metal/FZO transparent conductive film and preparation method thereof |
| CN202678109U (en) * | 2012-07-16 | 2013-01-16 | 佛山市意壳电容器有限公司 | High square resistance metallization polymer film capacitor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158373A (en) * | 2016-08-01 | 2016-11-23 | 合肥佳瑞林电子技术有限公司 | A kind of preparation method of thin film capacitor |
| CN106409507A (en) * | 2016-10-20 | 2017-02-15 | 无锡宸瑞新能源科技有限公司 | Thin-film capacitor for high-temperature-resistant and high-humidity-resistant application and processing method thereof |
| CN106409507B (en) * | 2016-10-20 | 2019-03-01 | 无锡宸瑞新能源科技有限公司 | A kind of thin film capacitor and its processing method of high-temp resisting high-humidity resisting application |
| CN113345714A (en) * | 2021-07-05 | 2021-09-03 | 广东省塑镕科技有限公司 | Method for manufacturing box-packed metallized film capacitor |
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Application publication date: 20150826 |