CN104979413A - Thin-film solar cell - Google Patents
Thin-film solar cell Download PDFInfo
- Publication number
- CN104979413A CN104979413A CN201510407757.7A CN201510407757A CN104979413A CN 104979413 A CN104979413 A CN 104979413A CN 201510407757 A CN201510407757 A CN 201510407757A CN 104979413 A CN104979413 A CN 104979413A
- Authority
- CN
- China
- Prior art keywords
- thin
- layer
- film solar
- film
- nanometer line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000002070 nanowire Substances 0.000 claims abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 210000001142 back Anatomy 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000002042 Silver nanowire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A thin-film solar cell comprises a glass substrate, a transparent conductive layer, a photoelectric absorption layer and a back electrode layer sequentially from bottom to top, and is characterized in that the transparent conductive layer is made of metal nanowires; the photoelectric absorption layer is an amorphous silicon, a microcrystalline silicon or a cadmium telluride thin film. According to the thin-film solar cell of the invention, the metal nanowire replaces a semiconductor transparent conductive film, such as AZO, ITO, FTO and the like, and thus, at the transmittance premise, resistance of the film layer is greatly reduced, lateral collection of photocarriers is more facilitated, resistance of a cell device is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
Description
Technical field
The present invention relates to field of thin film solar cells, particularly relate to the thin-film solar cells that a kind of nesa coating is metal nanometer line.
Background technology
Thin-film solar cells transparency conducting layer is semi-conducting material, as ITO, FTO, AZO etc., it is under the prerequisite realizing the requirement of solar cell light transmission, but the resistance that himself material factor can not be avoided to cause exists, carrier collection efficiency is not high as lateral light electric collecting device to make solar cell device, becomes the bottleneck affecting its photoelectric conversion efficiency.And the electric conductivity of metal is far superior to semiconductor, if metal being made nano thread structure is arranged on substrate of glass simultaneously, as the solar energy Window layer of printing opacity and conduction, then can realize the performance more superior than traditional transparent conductive semiconductor film, improve the photoelectric conversion efficiency of solar cell.
Summary of the invention
The present invention aims to provide a kind of defect state density of test silicon base film, so for silica-based thin solar cell material behavior improve solution is provided.
In order to reach above-mentioned purpose, provide a kind of thin-film solar cells, include substrate of glass, transparency conducting layer, photoelectric absorption layer, dorsum electrode layer from bottom to top successively, it is characterized in that, described transparency conducting layer is material is metal nanometer line, described photoelectric absorption layer is amorphous silicon, microcrystal silicon or Cadimium telluride thin film.
In some embodiments, described metal nanometer line comprises silver nanowire, copper nano-wire.
In some embodiments, described metal nanometer line layer, its particle size range is 50 ~ 80nm, and gross thickness is 300 ~ 600 μm.
In some embodiments, described metal nanometer line layer carries out control and the growth of technique in described substrate of glass.
In some embodiments, in described metal nanometer line, spacing is between the lines 2 ~ 10mm.
According to survey thin-film solar cells of the present invention, with metal nanometer line alternative semiconductors nesa coating, as AZO, ITO, FTO etc., under can be implemented in the prerequisite of printing opacity, greatly reduce the resistance of rete, advantageously in the lateral collection of photo-generated carrier, and reduce the resistance of battery device, improve the photoelectric conversion efficiency of solar cell.
Below in conjunction with accompanying drawing, the description of purport of the present invention is described by example, to know other aspects of the present invention and advantage.
Accompanying drawing explanation
By reference to the accompanying drawings, by detailed description hereafter, above-mentioned and other feature and advantage of the present invention more clearly can be understood, wherein:
Fig. 1 is the structural representation of the thin-film solar cells according to the embodiment of the present invention.
Embodiment
See the accompanying drawing of the specific embodiment of the invention, hereafter in more detail the present invention will be described.But the present invention can realize in many different forms, and should not be construed as by the restriction in the embodiment of this proposition.On the contrary, it is abundant and complete open in order to reach for proposing these embodiments, and makes those skilled in the art understand scope of the present invention completely.
Description describes the thin-film solar cells according to the embodiment of the present invention in detail.
Membrane according to the invention solar cell, include substrate of glass, transparency conducting layer, photoelectric absorption layer, dorsum electrode layer from bottom to top successively, it is characterized in that, described transparency conducting layer is material is metal nanometer line, described photoelectric absorption layer is amorphous silicon, microcrystal silicon or Cadimium telluride thin film.
Described metal nanometer line comprises silver nanowire, copper nano-wire.Described metal nanometer line layer, its particle size range is 50 ~ 80nm, and gross thickness is 300 ~ 600 μm.Described metal nanometer line layer carries out control and the growth of technique in described substrate of glass.In described metal nanometer line, spacing is between the lines 2 ~ 10mm.
As shown in Figure 1, thin-film solar cells provided by the present invention, using glass as substrate 1, the surface of substrate 1 is followed successively by metal nanometer line 2, photoelectric absorption layer 3, dorsum electrode layer 4.
Metal nanometer line 2 is silver nanowire, and sodium rice silver film thickness is 500 μm, and the width between nano wire is 5mm; The wherein composite construction of dorsum electrode layer 4AZO film and aluminium film.
According to survey thin-film solar cells of the present invention, with metal nanometer line alternative semiconductors nesa coating, as AZO, ITO, FTO etc., under can be implemented in the prerequisite of printing opacity, greatly reduce the resistance of rete, advantageously in the lateral collection of photo-generated carrier, and reduce the resistance of battery device, improve the photoelectric conversion efficiency of solar cell.
More than describe preferred embodiment of the present invention in detail.Should be appreciated that those of ordinary skill in the art just design according to the present invention can make many modifications and variations without the need to creative work.All technical staff in the art, all should by the determined protection range of claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (5)
1. a thin-film solar cells, include substrate of glass, transparency conducting layer, photoelectric absorption layer, dorsum electrode layer from bottom to top successively, it is characterized in that, described transparency conducting layer is material is metal nanometer line, described photoelectric absorption layer is amorphous silicon, microcrystal silicon or Cadimium telluride thin film.
2. thin-film solar cells according to claim 1, is characterized in that, described metal nanometer line comprises silver nanowire, copper nano-wire.
3. thin-film solar cells according to claim 2, is characterized in that, described metal nanometer line layer, and its particle size range is 50 ~ 80nm, and gross thickness is 300 ~ 600 μm.
4. a kind of thin-film solar cells according to claim 3, is characterized in that, described metal nanometer line layer carries out control and the growth of technique in described substrate of glass.
5. a kind of thin-film solar cells according to claim 4, is characterized in that, in described metal nanometer line, spacing is between the lines 2 ~ 10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510407757.7A CN104979413A (en) | 2015-07-13 | 2015-07-13 | Thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510407757.7A CN104979413A (en) | 2015-07-13 | 2015-07-13 | Thin-film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104979413A true CN104979413A (en) | 2015-10-14 |
Family
ID=54275737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510407757.7A Pending CN104979413A (en) | 2015-07-13 | 2015-07-13 | Thin-film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104979413A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633182A (en) * | 2016-02-18 | 2016-06-01 | 安徽旭能光伏电力有限公司 | Double-glass photovoltaic module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010287540A (en) * | 2009-06-15 | 2010-12-24 | Panasonic Electric Works Co Ltd | Method of manufacturing transparent conductive pattern, and base material with transparent conductive pattern |
| CN102280503A (en) * | 2011-08-11 | 2011-12-14 | 北京泰富新能源科技有限公司 | Transmitting-type thin film solar battery |
| CN102569508A (en) * | 2011-12-29 | 2012-07-11 | 中山大学 | Thin-film solar photovoltaic cell with nano wire array structure and preparation method for thin-film solar photovoltaic cell |
| CN204905264U (en) * | 2015-07-13 | 2015-12-23 | 中国建材国际工程集团有限公司 | A thin -film solar cell |
-
2015
- 2015-07-13 CN CN201510407757.7A patent/CN104979413A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010287540A (en) * | 2009-06-15 | 2010-12-24 | Panasonic Electric Works Co Ltd | Method of manufacturing transparent conductive pattern, and base material with transparent conductive pattern |
| CN102280503A (en) * | 2011-08-11 | 2011-12-14 | 北京泰富新能源科技有限公司 | Transmitting-type thin film solar battery |
| CN102569508A (en) * | 2011-12-29 | 2012-07-11 | 中山大学 | Thin-film solar photovoltaic cell with nano wire array structure and preparation method for thin-film solar photovoltaic cell |
| CN204905264U (en) * | 2015-07-13 | 2015-12-23 | 中国建材国际工程集团有限公司 | A thin -film solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633182A (en) * | 2016-02-18 | 2016-06-01 | 安徽旭能光伏电力有限公司 | Double-glass photovoltaic module |
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| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151014 |
|
| RJ01 | Rejection of invention patent application after publication |