CN104977735A - Method for integrating polymer electro-optic chip with microwave matched load circuit - Google Patents
Method for integrating polymer electro-optic chip with microwave matched load circuit Download PDFInfo
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- CN104977735A CN104977735A CN201410136421.7A CN201410136421A CN104977735A CN 104977735 A CN104977735 A CN 104977735A CN 201410136421 A CN201410136421 A CN 201410136421A CN 104977735 A CN104977735 A CN 104977735A
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- microwave
- transmission circuit
- microwave transmission
- circuit
- chip
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/061—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on electro-optical organic material
Abstract
The invention belongs to the technical field of microwave circuit matched loads, and particularly relates to a method for integrating a polymer electro-optic chip with a microwave matched load circuit. The method for integrating the polymer electro-optic chip with the microwave matched load circuit comprises the step that a section of prolonged microwave transmission circuit with a microwave matched load function and same or similar size with a microwave transmission circuit in an electro-optic acting zone is added behind the electro-optic acting zone of the microwave transmission circuit in the polymer electro-optic chip to consume microwave signals passing through the prolonged microwave transmission circuit, and the integration of the polymer electro-optic chip with the microwave matched load circuit is achieved.
Description
Technical field
The invention belongs to microwave circuit matched load technical field, be specifically related to a kind of electrostrictive polymer optical chip and the integrated method of microwave termination circuit.
Background technology
Along with the fast development of microwave photon technology, the electro-optical devices such as electrooptic modulator, electrooptical switching, optical phase shifter, optical analog to digital conversion device obtain investigation and application widely.Microwave termination circuit is indispensable vitals in microwave photon system, and direct relation the stability of system and the safety of microwave source.Such as, when using electrooptic modulator in microwave photon system, do not have microwave termination circuit that microwave will be made can not to be effectively delivered to eq effect district, the efficiency of electro-optic conversion can be had a strong impact on thus, microwave photon system cannot normally be worked.Therefore, the microwave termination circuit that suitable must be had in microwave photon system, unnecessary microwave absorption is fallen, ensure the normal work of the safety of system.
At present, the mode realizing microwave termination circuit in traditional microwave photon system has three kinds: 1. by being consumed by unnecessary microwave energy in the mode of the output terminal of microwave transmission circuit external microwave termination circuit, but need extra joint and matched load device, thereby increase the cost of microwave photon system, volume and complicacy.And the assembly technology of the output end connector of microwave transmission circuit also can affect the Microwave reflectometer of the input end of microwave transmission circuit, require, in strict microwave photon system, extra difficulty can be brought to Microwave reflectometer at some.2. use the microwave termination circuit made separately, and by technology such as spun gold pressure weldings, the microwave termination circuit made separately is connected with the output terminal of the microwave transmission circuit of electric light chip, but this mode needs extra installation step, and need the edge microwave transmission circuit of electric light chip being drawn out to electric light chip, add the difficulty of design.3. on electric light chip, use the technique of sputtering and photoetching to make thin film resistance at the output terminal of microwave transmission circuit unnecessary microwave energy is consumed, add process complexity and difficulty.For electrostrictive polymer optical chip, because polymer as electro-optical material is poor to process-tolerant, this mode to realize difficulty larger.Because the requirement of microwave photon technology on safety and reliability is more and more higher, a kind of compact conformation of current urgent need, the microwave termination circuit that volume is little, lightweight, reliability is high.
Summary of the invention
The object of the invention is for the defect existing for the mode realizing microwave termination circuit in traditional microwave photon system, thus a kind of electrostrictive polymer optical chip and the integrated method of microwave termination circuit are provided.
Electrostrictive polymer optical chip of the present invention and the integrated method of microwave termination circuit are: increase the microwave transmission circuit extended like the measure-alike or adjoining dimensions of the microwave transmission circuit in one section of that have microwave termination function and described eq effect district after the eq effect district in the microwave transmission circuit in electrostrictive polymer optical chip, make to be consumed by the microwave signal in the microwave transmission circuit of described prolongation, realize the integrated of electrostrictive polymer optical chip and microwave termination circuit.
Described adjoining dimensions seemingly refers to that the difference of the size of the microwave transmission circuit in the size of the microwave transmission circuit of described prolongation and eq effect district is within ± 20%.
Described making is consumed by the microwave signal in the microwave transmission circuit of described prolongation, refers to that the microwave transmission circuit of prolongation can by by more than the microwave signature attenuation 5dB transmitting out in eq effect district.
Described microwave signature attenuation is 5dB ~ 20dB.
It is the polymer electrooptical modulator chip using micro-strip electrode structure that electrostrictive polymer optical chip of the present invention and the integrated method of microwave termination circuit are not only applicable to microwave transmission circuit, and being also applicable to microwave transmission circuit is the polymer electrooptical modulator chip using coplanar other electrode structure such as grade.
Electrostrictive polymer optical chip of the present invention and the integrated method of microwave termination circuit, only need when making the lay photoetching mask plate of the microwave transmission circuit in electrostrictive polymer optical chip, microwave transmission circuit in lay photoetching mask plate figure is replaced to the figure of the microwave transmission circuit of described prolongation by the figure of the latter linked matched load circuit part in eq effect district, do not need other extra making or installation steps.Have that reliability is high, long service life, and compact conformation, volume little, lightweight, adapt to the features such as high vacuum environment.
Accompanying drawing explanation
Fig. 1. the microwave transmission circuit in the present invention is the structural representation of the polymer electrooptical modulator chip of the integrated micro matched load circuit using micro-strip electrode structure.
Fig. 2. be the schematic diagram in A-A cross section in Fig. 1.
Fig. 3. the microwave signal input port S of the embodiment of the present invention 1
11the test result of parameter.
Fig. 4. the microwave signal input port S of the embodiment of the present invention 2
11the test result of parameter.
Reference numeral
1. the input port of microwave signal
2. realize the transition section of coplanar electrodes-micro-strip electrode translation function
3. the microwave transmission circuit (micro-strip electrode structure) in eq effect district
4. the microwave transmission circuit extended
5. the input port of optical waveguide
6. the output port of optical waveguide
7. substrate
8. the ground electrode of the microwave transmission circuit of micro-strip electrode structure
9. polymer optical wave guide layer
10. optical waveguide
The signal electrode of the microwave transmission circuit of the micro-strip electrode structure in 11. eq effect districts
The signal electrode of 12. microwave transmission circuits extended
The signal electrode width of the microwave transmission circuit of the micro-strip electrode structure in 13. eq effect districts
The signal electrode width of 14. microwave transmission circuits extended
Below in conjunction with accompanying drawing, the present invention will be further described.
Embodiment
Embodiment 1
As depicted in figs. 1 and 2, its typical microwave transmission circuit is the polymer electrooptical modulator chip (described polymer electrooptical modulator chip can be any polymer electrooptical modulator chip used in this area) of the integrated micro matched load circuit using micro-strip electrode structure, comprise microwave signal input port 1, realize the transition section 2 of coplanar electrodes-micro-strip electrode translation function, microwave transmission circuit 3 in eq effect district, the microwave transmission circuit 4 extended, the substrate of substrate 7(original copolymer electrooptic modulator chip), the ground electrode 8 of the microwave transmission circuit of micro-strip electrode structure and polymer optical wave guide layer 9.
As shown in Figure 1, when microwave signal enters on electrostrictive polymer optical chip by microwave signal input port 1, after realizing the transition section 2 of coplanar electrodes-micro-strip electrode translation function, along microwave transmission circuit by after the microwave transmission circuit 3 in eq effect district, again by microwave transmission circuit 4 part of long one section of the 10cm prolongation measure-alike with the microwave transmission circuit in eq effect district, microwave signal reaches more than 10dB at working frequency range 10GHz ~ 30GHz, at the S of microwave signal input port at the lossy microwave of the microwave transmission circuit part of this elongated segment
11parameter, lower than-20dB, achieves the function of electrostrictive polymer optical chip and microwave termination.
To the sample of above-mentioned making, test the S of microwave signal input port
11parameter, typical test result is shown in Fig. 3, well achieves the function of electrostrictive polymer optical chip and microwave termination.
Microwave transmission circuit is the preparation process of the polymer electrooptical modulator chip of the integrated micro matched load circuit of use micro-strip electrode structure: substrate 7 cleaned up, use the ground electrode 8 of the microwave transmission circuit of the ground electrode template construct micro-strip electrode structure of the polymer electrooptical modulator chip of the integrated ripple matched load circuit of micro-strip electrode structure, make the polymer optical wave guide layer 9 comprising optical waveguide 10, use the signal electrode 11 of the microwave transmission circuit of the micro-strip electrode structure in the signal electrode template construct eq effect district of the polymer electrooptical modulator chip of the integrated ripple matched load circuit of micro-strip electrode structure.When making the lay photoetching mask plate of ground electrode and signal electrode, by the microwave transmission circuit 4 of microwave transmission circuit by measure-alike, the transmission direction that connects matched load part after eq effect district and replace to the microwave transmission circuit in eq effect district extends, only need to be changed when drawing reticle figure, the preparation process of electrostrictive polymer optical chip is identical with the preparation process of the electrostrictive polymer optical chip of non-integrated micro matched load circuit.
Embodiment 2
As depicted in figs. 1 and 2, its typical microwave transmission circuit is the polymer electrooptical modulator chip (described polymer electrooptical modulator chip can be any polymer electrooptical modulator chip used in this area) of the integrated micro matched load circuit using micro-strip electrode structure, comprise microwave signal input port 1, realize the transition section 2 of coplanar electrodes-micro-strip electrode translation function, microwave transmission circuit 3 in eq effect district, the microwave transmission circuit 4 extended, the substrate of substrate 7(original copolymer electrooptic modulator chip), the ground electrode 8 of the microwave transmission circuit of micro-strip electrode structure and polymer optical wave guide layer 9.
As shown in Figure 1, when microwave signal enters on electrostrictive polymer optical chip by microwave signal input port 1, after realizing the transition section 2 of coplanar electrodes-micro-strip electrode translation function, along microwave transmission circuit by after the microwave transmission circuit 3 in eq effect district, again by microwave transmission circuit 4 part of long one section of the 12cm prolongation measure-alike with the microwave transmission circuit in eq effect district, microwave signal reaches more than 10dB at working frequency range 10GHz ~ 30GHz, at the S of microwave signal input port at the lossy microwave of the microwave transmission circuit part of this elongated segment
11parameter, lower than-20dB, achieves the function of electrostrictive polymer optical chip and microwave termination.
To the sample of above-mentioned making, test the S of microwave signal input port
11parameter, typical test result is shown in Fig. 4, well achieves the function of electrostrictive polymer optical chip and microwave termination.
Microwave transmission circuit is the preparation process of the polymer electrooptical modulator chip of the integrated micro matched load circuit of use micro-strip electrode structure: substrate 7 cleaned up, use the ground electrode 8 of the microwave transmission circuit of the ground electrode template construct micro-strip electrode structure of the polymer electrooptical modulator chip of the integrated ripple matched load circuit of micro-strip electrode structure, make the polymer optical wave guide layer 9 comprising optical waveguide 10, use the signal electrode 11 of the microwave transmission circuit of the micro-strip electrode structure in the signal electrode template construct eq effect district of the polymer electrooptical modulator chip of the integrated ripple matched load circuit of micro-strip electrode structure.When making the lay photoetching mask plate of ground electrode and signal electrode, microwave transmission circuit is replaced to and the microwave transmission circuit 4 that extends in the adjoining dimensions of the microwave transmission circuit in eq effect district, transmission direction by connecing matched load part after eq effect district, described adjoining dimensions refers to that the signal electrode width 14 of the microwave transmission circuit of the prolongation of the signal electrode 12 of the microwave transmission circuit of prolongation only adds 10% than the signal electrode width 13 of the microwave transmission circuit of the micro-strip electrode structure in eq effect district, and other size is all identical.Only need to be changed when drawing reticle figure, the preparation process of electrostrictive polymer optical chip is identical with the preparation process of the electrostrictive polymer optical chip of non-integrated micro matched load circuit.
Above embodiment, not does any pro forma restriction to the present invention, every according to technology of the present invention, to any simple modification made for any of the above embodiments, equivalent variations and modification, is all still within the scope of the present invention.
Claims (4)
1. an electrostrictive polymer optical chip and the integrated method of microwave termination circuit, it is characterized in that: the microwave transmission circuit extended like the measure-alike or adjoining dimensions of the microwave transmission circuit in the eq effect district that after the eq effect district in the microwave transmission circuit in electrostrictive polymer optical chip, increase by a section is that have microwave termination function and described, make to be consumed by the microwave signal in the microwave transmission circuit of described prolongation, realize the integrated of electrostrictive polymer optical chip and microwave termination circuit.
2. method according to claim 1, is characterized in that: described adjoining dimensions seemingly refers to that the difference of the size of the microwave transmission circuit in the size of the microwave transmission circuit of described prolongation and eq effect district is within ± 20%.
3. method according to claim 1, it is characterized in that: described making is consumed by the microwave signal in the microwave transmission circuit of described prolongation, refer to that the microwave transmission circuit of prolongation can by by more than the microwave signature attenuation 5dB transmitting out in eq effect district.
4. method according to claim 3, is characterized in that: described microwave signature attenuation is 5dB ~ 20dB.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410136421.7A CN104977735B (en) | 2014-04-04 | 2014-04-04 | A kind of method that electrostrictive polymer optical chip is integrated with microwave termination circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410136421.7A CN104977735B (en) | 2014-04-04 | 2014-04-04 | A kind of method that electrostrictive polymer optical chip is integrated with microwave termination circuit |
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| Publication Number | Publication Date |
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| CN104977735A true CN104977735A (en) | 2015-10-14 |
| CN104977735B CN104977735B (en) | 2018-06-15 |
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| CN201410136421.7A Expired - Fee Related CN104977735B (en) | 2014-04-04 | 2014-04-04 | A kind of method that electrostrictive polymer optical chip is integrated with microwave termination circuit |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1287449A (en) * | 1999-07-02 | 2001-03-14 | 皮雷利·卡维系统有限公司 | Electrooptical modulator with internal impedance match |
| US20030228081A1 (en) * | 2002-05-02 | 2003-12-11 | Tavlykaev Robert F. | Optical modulators with coplanar-waveguide-to-coplanar-strip electrode transitions |
| CN1474958A (en) * | 2000-11-16 | 2004-02-11 | ��ѧ�о��� | Wide hand electro-optical modulators |
| CN1754121A (en) * | 2002-12-20 | 2006-03-29 | 通用电气公司 | Wideband optical modulator with polymer waveguide and drive amplifier integrated on flexible substrate |
| CN2828856Y (en) * | 2005-11-14 | 2006-10-18 | 浙江大学 | Polarization unrelated light switch based on electro-optic polymer material |
| CN101501555A (en) * | 2006-06-14 | 2009-08-05 | 安立股份有限公司 | Optical modulator |
| JP2010237593A (en) * | 2009-03-31 | 2010-10-21 | Sumitomo Osaka Cement Co Ltd | Light control device |
-
2014
- 2014-04-04 CN CN201410136421.7A patent/CN104977735B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1287449A (en) * | 1999-07-02 | 2001-03-14 | 皮雷利·卡维系统有限公司 | Electrooptical modulator with internal impedance match |
| CN1474958A (en) * | 2000-11-16 | 2004-02-11 | ��ѧ�о��� | Wide hand electro-optical modulators |
| US20030228081A1 (en) * | 2002-05-02 | 2003-12-11 | Tavlykaev Robert F. | Optical modulators with coplanar-waveguide-to-coplanar-strip electrode transitions |
| CN1754121A (en) * | 2002-12-20 | 2006-03-29 | 通用电气公司 | Wideband optical modulator with polymer waveguide and drive amplifier integrated on flexible substrate |
| CN2828856Y (en) * | 2005-11-14 | 2006-10-18 | 浙江大学 | Polarization unrelated light switch based on electro-optic polymer material |
| CN101501555A (en) * | 2006-06-14 | 2009-08-05 | 安立股份有限公司 | Optical modulator |
| JP2010237593A (en) * | 2009-03-31 | 2010-10-21 | Sumitomo Osaka Cement Co Ltd | Light control device |
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| CN104977735B (en) | 2018-06-15 |
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Granted publication date: 20180615 Termination date: 20210404 |