CN104977473A - MEMS device capacitance detection method - Google Patents
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Abstract
The invention discloses an MEMS device capacitance detection method which comprises the following steps: one or more variable capacitors are provided, wherein each variable capacitor comprises two parallel fixation pole plates and a center movable part arranged between the two fixation pole plates, the center movable part being parallel to the fixation pole plates, the fixation pole plates being parallel to the X axis, the normal direction of each fixation pole plate being parallel to the Y axis, and the normal direction of the center movable part being parallel to the Y axis; one or more variable capacitors in the variable capacitors have periodical change due to the driving of electrostatic force, wherein the electrostatic force is generated by a frequency-rising driving method, the center movable part can move in the X axis and/or Y axis direction; and capacitance change of one or more variable capacitors in the variable capacitors can be detected by utilizing a DC voltage offset detection method. According to the method, by combining the frequency-rising driving and the DC detection, the frequency-rising driving separates a driving voltage (high frequency) and a signal voltage (low frequency) in the frequency domain, thereby greatly reducing interference of the driving signal on the detection signals.
Description
Technical field
The present invention relates to micro electronmechanical field, in particular to a kind of MEMS capacitance determining method.
Background technology
Micro electronmechanical (MEMS micro-electro-mechanical system) device has that volume is little, the life-span is long, energy consumption is low, be easy to the feature such as integrated and with low cost, is thus widely used in fields such as industry, information, Aero-Space, national defence.
According to the difference of detection method, MEMS can be divided into pressure resistance type, piezoelectric type, condenser type, thermojunction type, optical fiber type, electromagnetic type, resonant mode etc., wherein, pressure resistance type, piezoelectric type and condenser type are current main flow directions, and the outstanding advantages such as capacitive MEMS device is because having that measurement range is large, highly sensitive, dynamic response fast, good stability, obtain and apply the most widely, become the research emphasis of domestic and international each major company and scientific research institution.
The capacitance that the feature that capacitive MEMS device volume is little determines its sensitization capacitance is very little, is generally pF magnitude, and the capacitance change caused by measured physical quantity is then more small, is generally fF magnitude even less.The so little importance determining capacitance determining method to be measured, its sensitivity and antijamming capability have conclusive effect for the performance of capacitive MEMS device.In a MEMS, internal interference is generally much larger than external disturbance.By eliminating the interference source of sensor internal, obtain higher performance, the interference more than its outside of shielding is important.
When the predominant frequency of the capacitance variations that measured physical quantity causes is lower, this capacitance change is modulated on a high frequency carrier.Can effectively avoid the 1/f noise in circuit on the impact of low frequency signal like this.Usually, electric signal can be directly used to modulate this capacitance change, we are called electrical modulation method, and drives structure reciprocating mode of periodicity on the direction orthogonal with capacitance variations direction also can be used to modulate to use mechanical signal, and we are called machinery modulation method.Electrical modulation method is low for Structural Design Requirement, but there is the stability problem of modulating wave; Machinery modulation method has relevant requirement for structural design, but can solve modulation stability problem by building automative interest increasing controlling circuit.With regard to machinery modulation method, conventional type of drive has raising frequency to drive, half-frequency drive and equifrequency driving etc.In the application, raising frequency drives the predominant frequency referred to for generation of the driving voltage of driving force higher than the predominant frequency of driving force, the half-frequency drive predominant frequency referred to for generation of the driving voltage of driving force equals the half of driving force predominant frequency, and equifrequency drives the predominant frequency referred to for generation of the driving voltage of driving force equal with driving force predominant frequency.
At present, capacitive MEMS device capacitor is measured use more and is exchanged detection method or DC detection method.
When utilizing interchange detection method to carry out capacitance detecting, normally under the effect in input sinusoidal excitation source, utilize the peak change that the change modulates of testing capacitance is sinusoidal signal by the method for carrier modulation, then the sinusoidal signal after modulation is demodulated into DC signal output.The change of testing capacitance is by drived control, and conventional type of drive has equifrequency to drive, and raising frequency drives, half-frequency drive etc.When adopting equifrequency to drive, if it is higher than equifrequency driving frequency to exchange detection frequency, the frequency that equifrequency drives can be out tested, needs ad hoc to remove in subsequent conditioning circuit process, exchange the carrier wave detected to need to produce especially, year wave frequency, amplitude, phase stability are difficult to ensure.If the frequency that interchange detection frequency drives than equifrequency is low or equal, so according to Shannon's theorems, the capacitance change signal effective bandwidth detected is also low, and signal lag is obvious, and the foundation that cannot drive as equifrequency, error also can be larger.In order to be separated driving voltage frequency and signal frequency, patent CN102136830A proposes a kind of raising frequency driving method, and patent CN1299427C proposes a kind of half-frequency drive method.Although above two kinds of methods have been separated driving voltage frequency and signal frequency, but the problem exchanging detection itself cannot be avoided on the one hand, exchange the carrier wave detected to need to produce especially, year wave frequency, amplitude, phase stability are difficult to ensure, thus directly affects sensitivity; For preventing there is excessive impact to electrostatic force, it is very large that the amplitude of carrier wave can not be done, thus further limit the lifting of sensitivity; On the other hand, above-mentioned two kinds of methods are only limitted to resonant mode device, fail this driving to be used for machinery modulation capacitance change.
When utilizing DC detection method to carry out capacitance detecting, although the amplitude of direct current carrier can be done very large, stability also can be done very high, thus avoids the drawback exchanging and detect.But when equifrequency drives, the signal detected is equal with driving frequency, have simultaneously and disturb detection signal with drive singal frequently, the reliability of detection signal can be very low.Equally, use half-frequency drive, although inhibit conventional resonant frequency type to drive the coupling electrical signals brought, the 1/f noise of low-frequency range still can be modulated to resonance frequency half place frequently by this method, and low frequency range noise is increased.
Summary of the invention
The invention provides a kind of MEMS capacitance determining method, by raising frequency driving and DC detecting are combined, raising frequency drives on frequency domain, has been separated driving voltage (high frequency) and signal voltage (low frequency), thus greatly reduces the interference of drive singal to detection signal; Can do very high of direct current detection voltage back and do not worry the impact on electrostatic force, it is very high that its stability also can be done, thus drastically increase sensitivity.
For achieving the above object, the invention provides a kind of MEMS capacitance determining method, comprising the following steps:
One or more variable capacitance is provided, each described variable capacitance comprises two pieces of parallel fixed polar plates and the center moving part between two pieces of described fixed polar plates, described center moving part is parallel to described fixed polar plate, described fixed polar plate is parallel to X-axis, described fixed polar plate normal direction is parallel to Y-axis, and described center moving part normal direction is parallel to Y-axis;
Generating period changes by static-electronic driving for one or more in described variable capacitance, and wherein said electrostatic force is produced by raising frequency driving method, and described center moving part can move in X-axis and/or Y direction;
DC voltage bias detection method is used to detect capacitance variations one or more in described variable capacitance.
Preferably, described variable capacitance also changes by other power drives.
Preferably, other power described and described electrostatic force mutually orthogonal.
Preferably, the predominant frequency of other power described is not more than 1/2 of the predominant frequency of described electrostatic force.
Preferably, other power described be following any one:
Gravitation, inertial force, pressure power, electrostatic force, thermal expansion force, electromagnetic force and mechanical force.
Preferably, the common approach of the compatible comb silicon capacitance accelerometer of said method or silicon micro-gyroscope.
The present invention is driven by raising frequency and DC detection method combines, and is applied to MEMS capacitance measurement.During the electrostatic force applied by sensor in using driving voltage to capacitance measurement, raising frequency driving method is used to make driving voltage exist only in high frequency, avoid interference frequency to fall in the frequency band identical with detection signal and disturb signal, and when applying bias voltage and carrying out Detection capacitance change, use direct current biasing detection method, thus the high precision high bandwidth low noise circuit system required for AC bias detection method can be avoided.By raising frequency driving and DC detecting are combined, both the various drawback exchanging detection can effectively have been avoided, as the mutual interference between driving voltage and detection voltage, the stability of interchange detected amplitude, frequency, to the interference etc. of detection signal, can avoid again the shortcoming that equifrequency drives, half-frequency drive combines with DC detecting.Combined by the detection method of driving method that raising frequency is driven and DC detecting, capacitance measurement system is achieved on frequency domain being separated of driving voltage and detection signal voltage, thus greatly reduce the electrical Interference of MEMS inside, and simultaneously by the DC voltage bias detection method that sampling degree of stability is high, improve the measuring accuracy of capacitance measurement method greatly.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of basic structure and principle schematic that can realize measuring method of the present invention of the present invention;
Fig. 2 is the variation relation schematic diagram in Fig. 1 embodiment between each physical quantity;
The basic structure of Fig. 1 embodiment is applied to the schematic diagram measuring gravitation or inertial force by Fig. 3;
The basic structure of Fig. 1 embodiment is applied to the schematic diagram measuring pressure difference by Fig. 4;
The basic structure of Fig. 1 embodiment is applied to the schematic diagram measuring electric field intensity by Fig. 5;
The basic structure of Fig. 1 embodiment is applied to the schematic diagram measuring magnetic field intensity by Fig. 6;
Fig. 7 is the schematic diagram basic structure of Fig. 1 embodiment being applied to measuring tempeature change;
Fig. 8 is the structural representation of temperature sensitive beam 301 in Fig. 7 embodiment;
Fig. 9 is the schematic diagram basic structure of Fig. 1 embodiment being applied to measurement mechanical displacement;
Figure 10 is basic structure and the principle schematic that another kind can realize measuring method of the present invention;
Figure 11 is the variation relation in Figure 10 embodiment between each physical quantity;
Figure 12 is that another can realize basic structure and the principle schematic of measuring method of the present invention.
Embodiment
Below in conjunction with embody rule of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not paying the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, described variable capacitance is made up of two pieces of fixed polar plates 101 and center moving part 102.Described fixed polar plate is parallel to X-axis, and its normal direction is parallel to Y-axis.Described center moving part 102 is parallel to described fixed polar plate, and its normal direction is parallel to Y-axis.In described center moving part and figure, fixed polar plate distance in the Y-axis direction in the left side is designated as d1, and in described center moving part and figure, left side fixed polar plate does not mark being designated as in S1(figure perpendicular to the overlapping area in the plane of Y-axis).In described center moving part and figure, fixed polar plate distance in the Y-axis direction in the right is designated as d2, and on the right of in described center moving part and figure, fixed polar plate does not mark being designated as in S2(figure perpendicular to the overlapping area in the plane of Y-axis).Described center moving part can move in X-direction and Y direction, wherein, the moving part movement in the Y-axis direction of described center is that other power produced by change to be measured controls, the moving part movement in the X-axis direction of described center is that the electrostatic force produced by raising frequency drive unit 401 and 402 controls, and its driving frequency is greater than the twice of the predominant frequency of described center moving part movement in the Y-axis direction.On described variable capacitance pole plate, added current potential V0 can be set to earth potential by constant pressure source 201 and one of them constant pressure source of constant pressure source 202() provide, from but DC detecting.Variation relation in whole process between each physical quantity as shown in Figure 2.In figure, Vi is the driving voltage that described raising frequency drives, this driving voltage Vi produces electrostatic driving force F, this driving force F and other power described drive described variable capacitance to produce displacement x jointly, described displacement x produces the changes delta C of electric capacity, it is preferred that described variable capacitance changes delta C produces output voltage signal Vo., described output voltage signal Vo can be used for control Vi, thus forms closed loop.The predominant frequency of described driving voltage Vi is the predominant frequency higher than described driving force F, thus in whole capacitance measurement system, driving voltage Vi is separated on frequency domain with signal voltage Vo.
As can be seen from the figure, (d1+d2) is the constant do not changed with the motion of described center moving part, is designated as 2d, same, and (S1+S2) is also the constant do not changed with the motion of described center moving part, is designated as 2S.
Preferably, in order to the convenience of theory calculate, when the external world's other produced power to be measured are 0 time, we make d1=d2=d.
Preferably, in order to the convenience of theory calculate, when raising frequency drives driving force to be 0 time, we make S1=S2=S.
Simple electricity can be calculated, and the electric capacity of described variable capacitance can be expressed as
C=K*（S1/d1+S2/d2） (1)
In formula, K is one and contains specific inductive capacity, the constant of the band dimension of the systematic parameters such as constant source voltage V0.
When the external world is to be measured be 0 time, above formula can be reduced to:
C=K*(S1/d+S2/d)=K*(S1+S2)/d=2KS/d
This electric capacity is constant, and namely this electric capacity does not drive the change of driving force with raising frequency and changes.
When the external world is to be measured be not 0 time, d1 ≠ d2.Note d1=d+ Δ d, d2=d-Δ d, wherein Δ d compares d is in a small amount.Substitution formula (1) also does Taylor expansion, ignores the quadratic term of Δ d, can obtain
ΔC=K*Δd*(S1-S2)/(d^2) (2)
In formula, Δ C represents the change of electric capacity.
In above formula, (S1-S2) item is the driving force being proportional to raising frequency driving, and Δ d is proportional to be measured, thus the change of total capacitance is proportional to this product of two.We just obtain the carrier wave to be measured being driven modulation by raising frequency like this, then just can detect this carrier wave by the method for DC detecting.In whole process, driving voltage, carrier voltage is separated on frequency domain with detection voltage, thus greatly reduces the interference of device inside.
Concrete, when described center moving part driving force is in the Y direction inertial force, Fig. 1 is converted into Fig. 3. by measuring the change of described variable capacitance, the size of gravitation in Y-direction or inertial force component can be measured.
Provide another kind of embodiment of the present invention below.
When described center moving part driving force be in the Y direction pressure or pressure difference time, Fig. 1 is converted into Fig. 4. and moving part movement in the X-axis direction in described center is controlled by raising frequency drive unit 401 and 402, and its driving frequency is greater than the twice of the predominant frequency of described center moving part movement in the Y-axis direction.On described variable capacitance pole plate, added current potential can be set to earth potential by constant pressure source 201 and one of them constant pressure source of constant pressure source 202() provide, from but DC detecting.By measuring the change of described variable capacitance, the pressure difference on moving part both sides, described center can be measured.
Provide another kind of embodiment of the present invention below.
As shown in Figure 5, described center moving part have 1022 parts.1022 partial fixings, on the moving part of center, with net negative charge, are subject to electrostatic force with center moving part electrical isolation, and can drive center moving part 102 to move in the Y direction in electrostatic field.The moving part movement in the Y-axis direction of described center is controlled by electric field intensity, moving part movement in the X-axis direction in described center is controlled by raising frequency drive unit 401 and 402, and its driving frequency is greater than the twice of the predominant frequency of described center moving part movement in the Y-axis direction.On described variable capacitance pole plate, added current potential can be set to earth potential by constant pressure source 201 and one of them constant pressure source of constant pressure source 202() provide, from but DC detecting.By measuring the change of described variable capacitance, the electric field intensity component in the Y direction of movable part office, described center can be measured.
Provide another kind of embodiment of the present invention below.
As shown in Figure 6, described center moving part is connected with the electric current of X-direction, and space residing for the moving part of described center exists the magnetic field perpendicular to XY plane.According to Lorentz lorentz's theorem, described center movable part branch is subject to the electromagnetic force of Y-direction.The moving part movement in the Y-axis direction of described center is controlled by magnetic field intensity, moving part movement in the X-axis direction in described center is controlled by raising frequency drive unit 401 and 402, and its driving frequency is greater than the twice of the predominant frequency of described center moving part movement in the Y-axis direction.On described variable capacitance pole plate, added current potential can be set to earth potential by constant pressure source 201 and one of them constant pressure source of constant pressure source 202() provide, from but DC detecting.By measuring the change of described variable capacitance, the magnetic field intensity of movable part office, described center can be measured at the component perpendicular to XY in-plane.
Provide another kind of embodiment of the present invention below.
As shown in Figure 7, described center moving part is connected to a temperature sensitive beam 301, and this temperature sensitive girder construction as shown in Figure 8.This temperature sensitive beam is made up of the material 3011 and 3012 that thermal expansivity is different, when temperature changes, because 3011 is different from the thermal expansivity of 3012, thus the length of 3011 and 3012 has difference, this difference can cause temperature sensitive beam 301 to bend at the length direction perpendicular to beam, thus causing displacement, described temperature sensitive beam produces the deformation of Y-direction, thus drives the movement in the Y direction of described center moving part.The moving part movement in the Y-axis direction of described center is by temperature controlled, moving part movement in the X-axis direction in described center is controlled by raising frequency drive unit 401 and 402, and its driving frequency is greater than the twice of the predominant frequency of described center moving part movement in the Y-axis direction.On described variable capacitance pole plate, added current potential can be set to earth potential by constant pressure source 201 and one of them constant pressure source of constant pressure source 202() provide, from but DC detecting.By measuring the change of described variable capacitance, the change of the temperature of movable part office, described center can be measured.
Provide another kind of embodiment of the present invention below.
As shown in Figure 9, described center moving part is connected to a mechanical beams 302. when this mechanical beams moves in the Y direction, and described center movable part branch moves in the Y direction.The moving part movement in the Y-axis direction of described center is controlled by mechanical beams, moving part movement in the X-axis direction in described center is controlled by raising frequency drive unit 401 and 402, and its driving frequency is greater than the twice of the predominant frequency of described center moving part movement in the Y-axis direction.On described variable capacitance pole plate, added current potential can be set to earth potential by constant pressure source 201 and one of them constant pressure source of constant pressure source 202() provide, from but DC detecting.By measuring the change of described variable capacitance, the movement in the Y direction of described mechanical beams can be measured.
Provide another kind of embodiment of the present invention below.
As shown in Figure 10, described variable capacitance is made up of two pieces of fixed polar plates 101 and center moving part 102.Described fixed polar plate is parallel to X-axis, and its normal direction is parallel to Y-axis.Described center moving part can be driven by raising frequency drive unit 401,402, and its direction of motion can be parallel to X-axis, also can be parallel to Y-axis.Variation relation in whole process between each physical quantity as shown in figure 11.In figure, Vi is the driving voltage that described raising frequency drives, this driving voltage Vi produces electrostatic driving force F, this driving force F drives described variable capacitance to produce displacement x, described displacement x produces the changes delta C of electric capacity, it is preferred that described variable capacitance changes delta C produces output voltage signal Vo., described output voltage signal Vo can be used for control Vi, thus forms closed loop.By capacitance measuring device 501, the change that described variable capacitance drives with drive unit can be measured.On described variable capacitance pole plate, added current potential can be set to earth potential by constant pressure source 201, one of them constant pressure source of 202() provide, from but DC detecting.
Provide another kind of embodiment of the present invention below.
As shown in figure 12, described variable capacitance is made up of fixed polar plate 1011,1012 and center moving part 102.Described fixed polar plate is parallel to X-axis, and its normal direction is parallel to Y-axis.Described center moving part 102 is parallel to described fixed polar plate, and its normal direction is parallel to Y-axis.Described center moving part can move in X-direction and Y direction, wherein, the moving part movement in the Y-axis direction of described center is controlled by change to be measured, moving part movement in the X-axis direction in described center is controlled by raising frequency drive unit 401 and 402, and its driving frequency is greater than the twice of the predominant frequency of described center moving part movement in the Y-axis direction.On described variable capacitance pole plate added current potential by constant pressure source 201,202, one of them constant pressure source of 203(can be set to earth potential) provide, from but DC detecting.By capacitance measuring device 501,502, the change that described variable capacitance occurs with change to be measured can be measured.
Above-described embodiment is driven by raising frequency and DC detection method combines, and is applied to MEMS capacitance measurement.During the electrostatic force applied by sensor in using driving voltage to capacitance measurement, raising frequency driving method is used to make driving voltage exist only in high frequency, avoid interference frequency to fall in the frequency band identical with detection signal and disturb signal, and when applying bias voltage and carrying out Detection capacitance change, use direct current biasing detection method, thus the high precision high bandwidth low noise circuit system required for AC bias detection method can be avoided.By raising frequency driving and DC detecting are combined, both the various drawback exchanging detection can effectively have been avoided, as the mutual interference between driving voltage and detection voltage, the stability of interchange detected amplitude, frequency, to the interference etc. of detection signal, can avoid again the shortcoming that equifrequency drives, half-frequency drive combines with DC detecting.Combined by the detection method of driving method that raising frequency is driven and DC detecting, capacitance measurement system is achieved on frequency domain being separated of driving voltage and detection signal voltage, thus greatly reduce the electrical Interference of MEMS inside, and simultaneously by the DC voltage bias detection method that sampling degree of stability is high, improve the measuring accuracy of capacitance measurement method greatly.
One of ordinary skill in the art will appreciate that: accompanying drawing is the schematic diagram of an embodiment, the module in accompanying drawing or flow process might not be that enforcement the present invention is necessary.
One of ordinary skill in the art will appreciate that: the module in the device in embodiment can describe according to embodiment and be distributed in the device of embodiment, also can carry out respective change and be arranged in the one or more devices being different from the present embodiment.The module of above-described embodiment can merge into a module, also can split into multiple submodule further.
Last it is noted that above embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in previous embodiment, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of embodiment of the present invention technical scheme.
Claims (6)
1. a MEMS capacitance determining method, is characterized in that, comprises the following steps:
One or more variable capacitance is provided, each described variable capacitance comprises two pieces of parallel fixed polar plates and the center moving part between two pieces of described fixed polar plates, described center moving part is parallel to described fixed polar plate, described fixed polar plate is parallel to X-axis, described fixed polar plate normal direction is parallel to Y-axis, and described center moving part normal direction is parallel to Y-axis;
Generating period changes by static-electronic driving for one or more in described variable capacitance, and wherein said electrostatic force is produced by raising frequency driving method, and described center moving part can move in X-axis and/or Y direction;
DC voltage bias detection method is used to detect capacitance variations one or more in described variable capacitance.
2. method according to claim 1, is characterized in that, described variable capacitance also changes by other power drives.
3. method according to claim 2, is characterized in that, other power described and described electrostatic force mutually orthogonal.
4. method according to claim 3, is characterized in that, the predominant frequency of other power described is not more than 1/2 of the predominant frequency of described electrostatic force.
5. method according to claim 2, is characterized in that, other power described be following any one:
Gravitation, inertial force, pressure power, electrostatic force, thermal expansion force, electromagnetic force and mechanical force.
6. the method according to any one of claim 1-5, is characterized in that, the common approach of the compatible comb silicon capacitance accelerometer of described method or silicon micro-gyroscope.
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| CN105466466A (en) * | 2016-01-04 | 2016-04-06 | 中国兵器工业集团第二一四研究所苏州研发中心 | MEMS capacitive sensor with automatic range |
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| CN113203939A (en) * | 2021-04-26 | 2021-08-03 | 中国科学院地质与地球物理研究所 | Detection method and device for MEMS acceleration sensor chip |
| CN113203939B (en) * | 2021-04-26 | 2022-03-18 | 中国科学院地质与地球物理研究所 | Detection method and device for MEMS acceleration sensor chip |
| WO2022068218A1 (en) * | 2021-04-26 | 2022-04-07 | 中国科学院地质与地球物理研究所 | Method and device for checking mems acceleration sensor chip |
| AU2021206818B1 (en) * | 2021-04-26 | 2022-04-14 | Institute Of Geology And Geophysics, Chinese Academy Of Sciences | Apparatus and method for detecting mems acceleration sensor chip |
| JP2022554028A (en) * | 2021-04-26 | 2022-12-27 | 中国科学院地▲質▼▲与▼地球物理研究所 | Detection method and device for MEMS acceleration sensor chip |
| JP7221453B2 (en) | 2021-04-26 | 2023-02-13 | 中国科学院地▲質▼▲与▼地球物理研究所 | Detection method and device for MEMS acceleration sensor chip |
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Application publication date: 20151014 |