AU2021206818B1 - Apparatus and method for detecting mems acceleration sensor chip - Google Patents
Apparatus and method for detecting mems acceleration sensor chip Download PDFInfo
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- AU2021206818B1 AU2021206818B1 AU2021206818A AU2021206818A AU2021206818B1 AU 2021206818 B1 AU2021206818 B1 AU 2021206818B1 AU 2021206818 A AU2021206818 A AU 2021206818A AU 2021206818 A AU2021206818 A AU 2021206818A AU 2021206818 B1 AU2021206818 B1 AU 2021206818B1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
Abstract
The application discloses a method and apparatus for detecting an MEMS (Micro Electro
Mechanical Systems) acceleration sensor chip so as to solve a technical problem that whether the
MEMS acceleration sensor chip is normal cannot be judged preliminarily after the existing
5 MEMS acceleration sensor chip is machined. The method comprises: applying a variable direct
current voltage and an alternating current voltage at a preset frequency to a first electrode plate
and a second electrode plate of the MEMS acceleration sensor chip to obtain a basic capacitance
value and a boosted capacitance value between the first electrode plate and the second electrode
plate; determining a break over voltage, a capacitance change value and a C-V characteristic
10 curve based on the obtained basic capacitance value and boosted capacitance value; and judging
whether the MEMS acceleration sensor chip is normal according to the basic capacitance value,
the break over voltage, the capacitance change value and the C-V characteristic curve of the first
electrode plate and the second electrode plate. The application achieves detection of the
machined MEMS acceleration sensor chip by the above method, thereby saving cost greatly.
Description
TECHNICAL FIELD The application relates to the technical field of sensor performance analysis, in particular to
an apparatus and method for detecting an MEMS acceleration sensor.
MEMS (Micro Electro Mechanical Systems) achieve a micro mechanical structure on a
silicon wafer by means of a micro-nano machining technology, thereby greatly decreasing the
size of an apparatus, reducing the energy consumption and improving the reliability. As a silicon
micromachining technology and a semiconductor integrated circuit process are adopted, volume
production is easy to achieve and the cost is low. MEMS featuring in microminiaturization,
integration, low cost, low power consumption and the like are widely applied to the fields of
consumer electronics, automotive electronics, biomedicines and the like. The MEMS
acceleration sensor is one of applications.
Performance of the MEMS acceleration sensor chip needs to be tested and analyzed after
design and machining to determine whether the MEMS acceleration sensor chip meets a design
requirement and can work normally. As the MEMS chip packaging cost often accounts for 70-80%
of the whole component cost of the MEMS acceleration sensor chip, a problem needed to be
solved urgently at present is that preliminary test is conducted on the performance of MEMS
acceleration sensor chips after the MEMS acceleration sensor chips are machined, chips which
cannot work normally are excluded, and the MEMS acceleration sensor chips with good
performance are screened to be packaged.
Embodiments of the application provide a method and apparatus for detecting an MEMS
acceleration sensor chip so as to solve an existing technical problem that the cost is high as the
MEMS acceleration sensor chip which works abnormally cannot be excluded preliminarily after
the MEMS acceleration sensor chip is machined.
On the one hand, an embodiment of the application provides a method for detecting an
MEMS acceleration sensor chip. The method is characterized by including: applying a variable
direct current voltage to a first electrode plate and a second electrode plate of the MEMS
acceleration sensor chip to enable the second electrode plate to move toward a direction of the
first electrode plate, wherein the first electrode plate is a fixed electrode plate and the second
electrode plate is a movable electrode plate; applying an alternating current voltage at a preset
frequency to the first electrode plate and the second electrode plate to obtain a basic capacitance
value and a boosted capacitance value between the first electrode plate and the second electrode
plate, wherein the basic capacitance value is a capacitance value between the first electrode plate
and the second electrode plate when a direct current voltage value is zero, and the boosted
capacitance value is a capacitance value between the first electrode plate and the second
electrode plate when the direct current voltage value is not zero; determining a voltage
capacitance characteristic curve, a break over voltage and a capacitance change value between
the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip
based on the obtained basic capacitance value and boosted capacitance value between the first
electrode plate and the second electrode plate; and judging whether the MEMS acceleration
sensor chip is normal according to the basic capacitance value, the break over voltage, the
capacitance change value and the voltage-capacitance characteristic curve between the first
electrode plate and the second electrode plate.
The method for detecting the MEMS acceleration sensor chip provided by the embodiment
of the application obtains the basic capacitance value, the break over voltage and the capacitance
change value of the MEMS acceleration sensor chip by measuring a capacitance value between
the two electrode plates under different direct current voltage values. Whether the MEMS
acceleration sensor chip is problematic in a machining process is analyzed via the basic
capacitance value, the break over voltage and the capacitance change value and problems in
operation or process are determined, such that subsequent improvement is convenient.
In a mode of execution of the application, the method further includes: determining a basic
capacitance value, a break over voltage, a capacitance change value and a voltage-capacitance
characteristic curve between the second electrode plate and a third electrode plate of the MEMS
acceleration sensor chip; and comparing the basic capacitance value, the break over voltage, the
capacitance change value and the voltage-capacitance characteristic curve between the second
electrode plate and the third electrode plate of the MEMS acceleration sensor chip with
theoretical design values of corresponding basic capacitance value, break over voltage,
capacitance change value and voltage-capacitance characteristic curve between the second
electrode plate and the third electrode plate of the MEMS acceleration sensor chip, and thus
judging whether the MEMS acceleration sensor chip is normal.
In a mode of execution of the application, applying the variable direct current voltage to the
first electrode plate and the second electrode plate of the MEMS acceleration sensor chip to
enable the second electrode plate to move toward the direction of the first electrode plate
specifically includes: applying the variable direct current voltage to the first electrode plate and
the second electrode plate of the MEMS acceleration sensor chip; and adjusting the direct current
voltage value based on a preset stepped voltage value to enable the second electrode plate to
move toward the direction of the first electrode plate, wherein a moving distance of the second
electrode plate is determined by a current direct current voltage value.
In a mode of execution of the application, adjusting an output direct current voltage value
based on the preset stepped voltage value to enable the second electrode plate to move toward
the direction of the first electrode plate specifically includes: adjusting the direct current voltage
value based on the preset stepped voltage value to obtain different direct current voltage values
between the first electrode plate and the second electrode plate to generate electrostatic forces
with different amplitudes between the first electrode plate and the second electrode plate based
on the different direct current voltage values so as to overcome an elastic force generated by
deformation of an elastic beam based on movement of the second electrode plate, wherein the
elastic beam is an assembly connected with the second electrode plate of the MEMS acceleration
sensor chip.
In a mode of execution of the application, applying the alternating current voltage at the
preset frequency to the first electrode plate and the second electrode plate to obtain the basic
capacitance value and the boosted capacitance value between the first electrode plate and the
second electrode plate specifically includes: applying the alternating current voltage at the preset
frequency to the first electrode plate and the second electrode plate of the MEMS acceleration
sensor chip to generate a current between the first electrode plate and the second electrode plate;
and calculating the basic capacitance value and the boosted capacitance value between the first
electrode plate and the second electrode plate based on the generated current information,
wherein the current information includes an amplitude and a phase of the current.
In a mode of execution of the application, the break over voltage is a voltage value
corresponding to V under a circumstance that a formula - k result is equal to zero, wherein
E is a dielectric constant of a medium between the first electrode plate and the second electrode
plate, A is areas of the first electrode plate and the second electrode plate, V is a direct current
voltage value between the first electrode plate and the second electrode plate, d is a distance
between the first electrode plate and the second electrode plate and k is an elastic coefficient of
the elastic beam.
In a mode of execution of the application, judging whether the MEMS acceleration sensor
chip is normal according to the basic capacitance values, the break over voltages and the
capacitance change values of the first electrode plate and the second electrode plate specifically
includes: comparing the basic capacitance value, the break over voltage, the capacitance change
value and the voltage-capacitance characteristic curve between the first electrode plate and the
second electrode plate of the current MEMS acceleration sensor chip with theoretical design
values of the corresponding basic capacitance value, break over voltage, capacitance change
value and voltage-capacitance characteristic curve between the first electrode plate and the
second electrode plate of the MEMS acceleration sensor chip; and determining that the MEMS
acceleration sensor chip is abnormal under a circumstance that difference values between any
one or more of the current basic capacitance value, break over voltage, capacitance change value
and voltage-capacitance characteristic curve and the theoretical design values of the corresponding basic capacitance value, break over voltage, capacitance change value and voltage-capacitance characteristic curve are greater than preset threshold values.
In a mode of execution of the application, a preset multiple of an absolute value of an
alternating current voltage peak value is smaller than an absolute value of a direct current voltage
value when the direct current voltage value is not zero.
In a mode of execution of the application, before applying the variable direct current
voltage to the first electrode plate and the second electrode plate of the MEMS acceleration
sensor chip to enable the second electrode plate to move toward the direction of the first
electrode plate, the method further includes: arranging a first limiting salient point at an edge of a
first surface of the first electrode plate of the MEMS acceleration sensor chip and arranging a
second limiting salient point at an edge of a first surface of the third electrode plate so as to
prevent the second electrode plate from being in contact with the first electrode plate or the third
electrode plate in the moving process under the action of the direct current voltage.
On the one hand, an embodiment of the application provides an apparatus for detecting an
MEMS acceleration sensor chip. The apparatus is characterized by including: a voltage output
module used for applying a variable direct current voltage to a first electrode plate and a second
electrode plate of the MEMS acceleration sensor chip to enable the second electrode plate to
move toward a direction of the first electrode plate, wherein the first electrode plate is a fixed
electrode plate and the second electrode plate is a movable electrode plate; the voltage output
module further used for applying an alternating current voltage at a preset frequency to the first
electrode plate and the second electrode plate to obtain a basic capacitance value and a boosted
capacitance value between the first electrode plate and the second electrode plate, wherein the
basic capacitance value is a capacitance value between the first electrode plate and the second
electrode plate when a direct current voltage value is zero, and the boosted capacitance value is a
capacitance value between the first electrode plate and the second electrode plate when the direct
current voltage value is not zero; a determination module used for determining a voltage
capacitance characteristic curve, a break over voltage and a capacitance change value between
the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip
based on the obtained basic capacitance value and the boosted capacitance value between the first electrode plate and the second electrode plate; and a judging module used for judging whether the MEMS acceleration sensor chip is normal according to the basic capacitance value, the break over voltage, the capacitance change value and the voltage-capacitance characteristic curve between the first electrode plate and the second electrode plate.
The drawings described herein for further understanding of the application constitute a part
of the application. The schematic embodiments and description thereof are used for explaining
the application and do not limit the application improperly. In the drawings:
Fig. 1 is a simple structural schematic diagram of an MEMS acceleration sensor chip
provided by an embodiment of the application;
Fig. 2 is a flow diagram of a method for detecting an MEMS acceleration sensor chip
provided by an embodiment of the application;
Fig. 3 is a schematic diagram of a displacement direction of an MEMS acceleration sensor
chip under a direct current voltage provided by an embodiment of the application;
Fig. 4 is a schematic diagram of a physical model of an MEMS acceleration sensor chip
provided by an embodiment of the application;
Fig. 5 is a schematic diagram of a capacitance-voltage characteristic curve of an MEMS
acceleration sensor chip provided by an embodiment of the application;
Fig. 6 is a structural schematic diagram of a limiting salient point position of the MEMS
acceleration sensor chip provided by an embodiment of the application;
Fig. 7 is a structural schematic diagram of an apparatus for detecting an MEMS acceleration
sensor chip provided by an embodiment of the application.
In order to make purposes, technical schemes and advantages of the application clearer,
clear and intact description will be made on the technical schemes of the application below in
combination with specific embodiments of the application and corresponding drawings.
Obviously, the described embodiments are merely a part of embodiments of the application and are not all the embodiments. On a basis of the embodiments in the application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall into the scope of protection of the application.
Fig. 1 is a simple structural schematic diagram of an MEMS acceleration sensor chip
provided by an embodiment of the application, wherein the MEMS acceleration sensor chip is
comprised of a first electrode plate, a second electrode plate and a third electrode plate. The first
electrode plate and the third electrode plate are fixed electrode plates and do not move under the
action of external forces. The second electrode plate is located in a position between the first
electrode plate and the third electrode plate, and the second electrode plate is movable, and is
also referred as to a movable electrode plate in the embodiment of the application. A first surface
of the second electrode plate and a first surface of thefirst electrode plate form a plate capacitor
with same areas of upper and lower electrode plates, and a second surface of the second
electrode plate and a first surface of the third electrode plate also form a plate capacitor with
same areas of upper and lower electrode plates. The first surface of the second electrode plate
and the first surface of the first electrode plate are arranged oppositely, such that the second
electrode plate and the first electrode plate form a first capacitor, and the second surface of the
second electrode plate and the first surface of the third electrode plate are arranged oppositely,
such that the second electrode plate and the third electrode plate form a second capacitor.
The method and apparatus for detecting the MEMS acceleration sensor chip provided by the
embodiment of the application obtain the basic capacitance value, the break over voltage and the
capacitance change value of the MEMS acceleration sensor chip by measuring the capacitance
values between the two electrode plates under different voltage values. If an error between an
actually measured value and the corresponding theoretical design value is within a reasonable
range, the MEMS acceleration sensor chip meets the design requirement. Otherwise, problems in
operation or process in the MEM acceleration sensor machining process are analyzed according
to the basic capacitance value, the break over voltage, the capacitance change value and the
voltage-capacitance characteristic curve, such that subsequent improvement is convenient.
Further detailed description is made below.
Fig. 2 is a flow diagram of a method for detecting an MEMS acceleration sensor chip
provided by an embodiment of the application.
As shown in Fig. 2, the method for detecting the MEMS acceleration sensor chip provided
by the embodiment of the application specifically includes the following steps.
S101, a positive pole and a negative pole of a variable direct current voltage are applied to a
first electrode plate and a second electrode plate of the MEMS acceleration sensor chip to enable
the second electrode plate to move toward a direction of the first electrode plate, wherein the
variable direct current voltage is a direct current voltage with an adjustable voltage value, i.e.,
the direct current voltage with different values.
As a first surface of the second electrode plate and afirst surface of the first electrode plate
(two opposite surfaces of the first electrode plate and the second electrode plate) of the MEMS
acceleration sensor chip form a plate capacitor equal in area. It, therefore, can be known from a
formula C = : a capacitance value of the plate capacitor formed by the first surface of the
second electrode plate and the first surface of the first electrode plate, wherein C is capacitance
between the first electrode plate and the second electrode plate, Eis a dielectric constant between
the first electrode plate and the second electrode plate, A is areas of the first electrode plate and
the second electrode plate, and d is a distance between the first electrode plate and the second
electrode plate.
In order to obtain a basic capacitance value, a break over voltage and a capacitance change
value of the MEMS acceleration sensor chip, first, the variable direct current voltage needs to be
applied to the first electrode plate and the second electrode plate of the MEMS acceleration
sensor chip.
It should be noted that when the direct current voltage is applied to the first electrode plate
and the second electrode plate of the MEMS acceleration sensor chip, the positive pole of the
direct current voltage can be connected to the first electrode plate of the MEMS acceleration
sensor chip and the negative pole of the direct current voltage can be connected to the second
electrode plate of the MEMS acceleration sensor chip; or the negative pole of the direct current
voltage can be connected to the first electrode plate of the MEMS acceleration sensor chip and the positive pole of the direct current voltage can be connected to the second electrode plate of the MEMS acceleration sensor chip.
After the variable direct current voltage is applied to the first electrode plate and the second
electrode plate of the MEMS acceleration sensor chip, a direct current voltage value is adjusted
based on a preset stepped voltage value to enable the second electrode plate to move toward the
direction of the first electrode plate.
Specifically, an output voltage of the direct current voltage is adjusted based on the preset
stepped voltage value. The preset stepped voltage value is an output change value of the direct
current voltage when the direct current voltage value is adjusted every time. For example, as the
preset stepped voltage value is 1V, the direct current voltage value is increased by 1V or
decreased by 1V when the direct current voltage value is adjusted every time. After the first
electrode plate and the second electrode plate of the MEMS acceleration sensor chip obtains the
voltages (i.e., the voltages applied to the first electrode plate and the second electrode plate of the
MEMS acceleration sensor chip are not zero), the first electrode plate and the second electrode
plate are charged.
It should be noted that when if the positive pole of the direct current voltage is connected
with the first electrode plate of the MEMS acceleration sensor chip and the negative pole of the
direct current voltage is connected with the second electrode plate of the MEMS acceleration
sensor chip, the first surface of the first electrode plate is filled with positive charges, and the
first surface of the second electrode plate is filled with negative charges; and if the negative pole
of the direct current voltage is connected with the first electrode plate of the MEMS acceleration
sensor chip and the positive pole of the direct current voltage is connected with the second
electrode plate of the MEMS acceleration sensor chip, the first surface of the first electrode plate
is filled with negative charges, and the first surface of the second electrode plate is filled with
positive charges.
As the first electrode plate is the fixed electrode plate and the second electrode plate is the
movable electrode plate, whether the first surface of the first electrode plate is filled with
positive charges and the first surface of the second electrode plate isfilled with negative charges
or the first surface of the second electrode plate is filled with negative charges and the first surface of the second electrode plate is filled with positive charges, the second electrode plate is to have a trend of moving toward the direction of thefirst electrode plate as an electrostatic force attracting the second electrode plate and the first electrode plate is generated between the second electrode plate and the first electrode plate.
Fig. 3 is a schematic diagram of a displacement direction of an MEMS acceleration sensor
chip under a direct current voltage provided by an embodiment of the application.
As shown in Fig. 3, after a voltage with a voltage value amplitude of V is applied between
the first electrode plate and the second electrode plate, the second electrode plate moves toward
the first electrode plate. In addition, as both the first electrode plate and the third electrode plate
are fixed electrode plates, under a circumstance that the voltage value applied to the first
electrode plate and the second electrode plate is zero, distances between the first electrode plate
and the second electrode plate and between the second electrode plate and the third electrode
plate are do, and under a circumstance that the second electrode plate moves toward the first
electrode plate by x, the distance between the first electrode plate and the second electrode plate
is do-x and the distance between the second electrode plate and the third electrode plate is do+x.
Fig. 4 is a schematic diagram of a physical model of an MEMS acceleration sensor chip
provided by an embodiment of the application. The MEMS acceleration sensor chip is comprised
of a mass block, an elastic beam and a fixed frame. An upper surface of the fixed frame is
equivalent to the first electrode plate or the third electrode plate, the mass block is equivalent to
the second electrode plate, and a lower surface of the fixed frame is equivalent to the third
electrode plate or the first electrode plate. The mass block is connected to the frame via the
elastic beam. When the mass block moves, the elastic beam connected to the mass block deforms
to generate an elastic force, so that the elastic beam can be equivalent to a spring structure.
The second electrode plate overcomes the elastic force generated by strain of the elastic
beam by means of the electrostatic force generated between the first electrode plate and the
second electrode plate, and the second electrode plate stops at a position where the elastic force
is equal to the electrostatic force between the electrode plates.
The electrostatic force between the first electrode plate and the second electrode plate is 2 sAV F= 2(dX) 2, and the elastic force generated by deformation of the elastic beam is F = kx. do is
the distance between the first electrode plate and the second electrode plate when the voltage
value applied between the first electrode plate and the second electrode plate is zero, x is the
distance from which the second electrode plate moves toward the first electrode plate, V is the
direct current voltage value applied between the first electrode plate and the second electrode
plate, and k is an elastic coefficient of the elastic beam.
In an embodiment of the application, the variable direct current voltage can be further
applied to the second electrode plate and the third electrode plate of the MEMS acceleration
sensor chip by means of the method provided by the S101 to enable the second electrode plate to
move toward a direction of the third electrode plate.
S102, the positive pole and the negative pole of the alternating current voltage at the preset
frequency are applied to the first electrode plate and the second electrode plate to obtain a basic
capacitance value and a boosted capacitance value between the first electrode plate and the
second electrode plate.
After the direct current voltage is applied to the first electrode plate and the second
electrode plate of the MEMS acceleration sensor chip, the embodiment of the application further
applies the alternating current voltage at the preset frequency to the first electrode plate and the
second electrode plate. By means of the alternating current voltage at the preset frequency, the
capacitance values of the first electrode plate and the second electrode plate of the MEMS
acceleration sensor chip under different direct current voltage values are measured.
Specifically, when the direct current voltage value is zero, two output ends of the
alternating current voltage at the preset frequency are applied to the first electrode plate and the
second electrode plate of the MEMS acceleration sensor chip to generate a current between the
first electrode plate and the second electrode plate; and the basic capacitance value between the
first electrode plate and the second electrode plate is calculated based on the generated current
information, wherein the current information includes an amplitude and a phase of the current.
In an embodiment of the application, a specific calculation principle of the capacitance
value is as follows:
an impedance between the first electrode plate and the second electrode plate is Z = = 1I
R+ R + jX = IZILz, wherein a module value and an amplitude angle of Z are |Z
VR2 +X 2 and Oz = arctan( ), respectively, i.e., R = IZI cos Oz and X = IZI cos Oz.
In an embodiment of the application, based on the preset stepped voltage value, after the
direct current voltage value is changed every time and the second electrode plate is stabilized,
the boosted capacitance values between the first electrode plate and the second electrode plate of
the MEMS acceleration sensor chip under different direct current voltage values are measured
once by means of the alternating current voltage at the preset frequency. It should be noted that
the second electrode plate will move at a certain distance under the actions of the electrostatic
force and the elastic force after the direct current voltage value between the first electrode plate
and the second electrode plate is changed every time, thereby inducing a change of the distance
between the first electrode plate and the second electrode plate. It can be known from a formula FA C = that the capacitance between the first electrode plate and the second electrode plate d
changes along with the distance between the first electrode plate and the second electrode plate,
and thereby, the boosted capacitance values of the first electrode plate and the second electrode
plate under different direct current voltage values will change as well.
It should be further noted that when the direct current voltage value is not zero, a preset
multiple of an absolute value of an alternating current voltage peak value is smaller than an
absolute value of the direct current voltage value, wherein the preset multiple should be at least
greater than 100, i.e., the direct current voltage value should be two order of magnitudes greater
than the alternating current voltage peak value, and therefore, a condition that the accuracy of a
capacitance value measuring result is affected as the position of the second electrode plate moves
as a result of too high alternating current voltage is avoided.
In an embodiment of the application, the positive pole and the negative pole of the
alternating current voltage at the preset frequency are applied to the first electrode plate and the third electrode plate respectively by means of the method provided in the S102 to obtain the basic capacitance value and the boosted capacitance value between the second electrode plate and the third electrode plate.
S103, a break over voltage and a capacitance change value between the first electrode plate
and the second electrode plate of the MEMS acceleration sensor chip are determined based on
the obtained basic capacitance value and the boosted capacitance value between the first
electrode plate and the second electrode plate.
After the basic capacitance value and the boosted capacitance value between the first
electrode plate and the second electrode plate are obtained, a voltage-capacitance characteristic
curve (C-V characteristic curve) corresponding to the first electrode plate and the second
electrode of the MEMS acceleration sensor chip is drawn by means of a corresponding
relationship between the voltage value and the capacitance value.
Fig. 5 is a schematic diagram of a capacitance-voltage characteristic curve of an MEMS
acceleration sensor chip provided by an embodiment of the application.
As shown in Fig. 5, when the direct current voltage value is zero, the corresponding
capacitance value is the basic capacitance value between the first electrode plate and the second
electrode plate. The capacitance value corresponding to the direct current voltage value after
adjustment is the boosted capacitance value between the first electrode plate and the second
electrode plate based on the preset stepped voltage value. It should be noted that positive and
negative semi-axes corresponding to the voltage in Fig. 5 include two conditions: the positive
pole of the direct current voltage is connected with the first electrode plate and the negative pole
of the direct current voltage is connected with the second electrode plate, and the negative pole
of the direct current voltage is connected with the first electrode plate and the positive pole of the
direct current voltage is connected with the second electrode plate. In an embodiment of the
application, the break over voltage is the corresponding voltage value when the capacitance
between the electrode plates changes at a high speed, and a specific calculation principle of the
break over voltage is as follows:
2 CAV F - - + kx a resultant force of the second electrode plate is ado - x)
- CAV 2 +k(d -d) OF CAV 2 -k , such that cd d3
eAV 2 k F When d3 ,d , at the moment, if slight disturbance occurs on the position of
the second electrode plate, for example, slight displacement 1d occurs, the resultant force and
displacement generated on the second electrode plate are reverse in direction. Therefore, the
eAV 2 8 ___> k >0 second electrode plate can pulled back again to a balance position. When d3 ,d
at the moment, if slight disturbance occurs on the position of the second electrode plate, for
example, slight displacement 6d occurs, the resultant force and displacement generated on the
second electrode plate are same in direction. Therefore, the second electrode plate will be further
pulled away from the balance position, so that the distance between the electrode plates changes
at a high speed and the capacitance between the corresponding electrode plates changes at a high
speed,too.
OF = 0 Therefore, the voltage corresponding to 8d is the break over voltage, and when
OF 0k = eAV, 2 =_ 0 dk ad ,R , d = do at the moment can be obtained, and thus, the break over
voltage is V 8kd -27FA
In an embodiment of the application, in order to prevent the second electrode plate from
being damaged as the second electrode plate collides with the first electrode plate in a process
that the second electrode moves toward the first electrode plate during the change at the high
speed, a first limiting salient point is arranged at an edge of the first surface of the first electrode
plate of the MEMS acceleration sensor chip and a second limiting salient point is arranged at an
edge of the first surface of the third electrode plate of the MEMS acceleration sensor chip. Under
a circumstance that the second electrode plate moves to collide with the limiting salient point, limited by the limiting salient point, the second electrode plate cannot continue to move toward the direction of the first electrode plate. At the moment, if the direct current voltage value between the first electrode plate and the second electrode plate continues to be adjusted based on the stepped voltage value, as the position of the second electrode plate is not changed, the capacitance value between the first electrode plate and the second electrode plate is not changed.
At the moment, a difference value between the basic capacitance value and the boosted
capacitance value between the first electrode plate and the second electrode plate is referred to as
the capacitance change value.
Fig. 6 is a structural schematic diagram of a limiting salient point position of an MEMS
acceleration sensor chip provided by an embodiment of the application.
As shown in Fig. 6, limiting salient points 501 are arranged on the first surface of the first
electrode plate and the first surface of the third electrode plate, and sizes and shapes of the
limiting salient points can be adjusted according to an actual detection requirement, and are not
defined herein.
In an embodiment of the application, a break over voltage and a capacitance change value
between the second electrode plate and the third electrode plate of the MEMS acceleration
sensor chip can be further determined based on the obtained basic capacitance value and boosted
capacitance value between the second electrode plate and the third electrode plate by means of
the method provided in the S103. The method is same as the method for determining the break
over voltage and the capacitance change value between the first electrode plate and the second
electrode plate of the MEMS acceleration sensor chip, and is not described in detail herein.
S104, whether the MEMS acceleration sensor chip is normal is judged according to the
basic capacitance value, the break over voltage the capacitance change value and the C-V
characteristic curve between the first electrode plate and the second electrode plate.
After the break over voltage and the capacitance change value of the MEMS acceleration
sensor chip is obtained according to the C-V characteristic curve of the MEMS acceleration
sensor chip, whether difference values between the basic capacitance value, the break over
voltage, the capacitance change value and the C-V characteristic curve of the current MEMS
acceleration sensor chip and the theoretical design values of the corresponding basic capacitance value, break over voltage, capacitance change value and C-V characteristic curve are greater than preset threshold values is judged.
Under a circumstance that the difference value between the current basic capacitance value
and the theoretical design value of the corresponding basic capacitance value is greater than the
preset threshold value, it is determined that there is a difference between the structural parameter
and the theoretical design value of the current MEMS acceleration sensor chip as there is a
problem in the process of machining the current MEMS acceleration sensor chip.
Under a circumstance that the difference value between the current break over voltage and
the theoretical design value of the corresponding break over voltage is greater than the preset
threshold value, it is determined that there is a difference between the structural parameter and
the theoretical design value of the current MEMS acceleration sensor chip as there is a problem
in the process of machining the current MEMS acceleration sensor chip.
Under a circumstance that the difference value between the current capacitance change
value and the theoretical design value of the corresponding capacitance change value is greater
than the preset threshold value, it is determined that the second electrode plate of the current
MEMS acceleration sensor chip cannot move to the corresponding position normally according
to different voltage values; and under the circumstance, it is verified that there may be problems
in the machining process of the elastic beam, such that the second electrode plate cannot move
normally.
Under a circumstance that the difference value between the boosted capacitance value
corresponding to each direct current voltage value of the current C-V characteristic curve and the
boosted capacitance value corresponding to each direct current voltage value of the theoretical
design value of the corresponding C-V characteristic curve is greater than the preset threshold
value and under a circumstance that the integral shape of the current C-V characteristic curve
and the integral shape of the theoretical design value of the corresponding C-V characteristic
curve have an error exceeding a reasonable range, it is determined that there is a problem in the
process of machining the current MEMS acceleration sensor chip.
In an embodiment of the application, whether the MEMS acceleration sensor chip is normal
is judged according to the basic capacitance value, the break over voltage, the capacitance change value and the C-V characteristic curve between the second electrode plate and the third electrode plate by means of the method provided in the S104. The specific method is same as the method for determining the basic capacitance value, the break over voltage, the capacitance change value and the C-V characteristic curve between the first electrode plate and the second electrode plate, and is not described in detail herein.
It should be noted that only if errors between the basic capacitance value, the break over
voltage, the capacitance change value and the C-V characteristic curve between the first
electrode plate and the second electrode plate and the corresponding theoretical design values
and between the basic capacitance value, the break over voltage, the capacitance change value
and the C-V characteristic curve between the second electrode plate and the third electrode plate
and the corresponding theoretical design values are within a reasonable range, the MEMS
acceleration sensor chip can be judged to be normal.
It should be noted that the method for detecting the MEMS acceleration sensor chip
provided by the application can not only detect the unpackaged MEMS acceleration sensor chip
and also detect the packaged MEMS acceleration sensor chip. In order to avoid a condition that
the cost is increased as the MEMS acceleration sensor chip which cannot work normally is
packaged, it is suggested that the MEMS acceleration sensor chip is detected before package.
The method for detecting the MEMS acceleration sensor chip provided by the embodiment
of the application solves the technical problem that the cost is increased as the MEMS
acceleration sensor chip which cannot work normally is packaged because the MEMS
acceleration sensor chips can be produced in bathes and the packaging cost of the MEMS
acceleration sensor chips often accounts for 70-80% of the whole production cost of the MEMS
acceleration sensor chips. The method for detecting the MEMS acceleration sensor chip achieves
preliminary test on the performance of the unpackaged MEMS acceleration sensor chips, the
chips which cannot work normally can be excluded, and the MEMS acceleration sensor chips
with good performance are screened to be packaged, so that the cost is saved greatly.
Based on a same inventive concept, an embodiment of the application further provides an
apparatus for detecting the MEMS acceleration sensor chip, a structural schematic diagram of
which is as shown in Fig. 7.
Fig. 7 is a structural schematic diagram of the apparatus for detecting the MEMS
acceleration sensor chip provided by the embodiment of the application. As shown in Fig. 7, the
embodiment of the application provides an apparatus 700 for detecting the MEMS acceleration
sensor chip, including a voltage output module 701, a determination module 702 and a judging
module 703.
Those skilled in the art can understand that the structure of the apparatus for detecting the
MEMS acceleration sensor chip shown by Fig. 7 does not limit the apparatus for detecting the
MEMS acceleration sensor chip. Actually, the apparatus for detecting the MEMS acceleration
sensor chip can include more or fewer components than shown in Fig. 7 or combinations of some
components or arrangements of different components.
In an embodiment of the application, the voltage output module 701 is used for applying a
variable direct current voltage to a first electrode plate and a second electrode plate of the
MEMS acceleration sensor chip to enable the second electrode plate to move toward a direction
of the first electrode plate, wherein the MEMS acceleration sensor chip is an unpackaged chip,
the first electrode plate is a fixed electrode plate and the second electrode plate is a movable
electrode plate; the voltage output module 701 is further used for applying an alternating current
voltage at a preset frequency to the first electrode plate and the second electrode plate to obtain a
basic capacitance value and a boosted capacitance value between the first electrode plate and the
second electrode plate, wherein the basic capacitance value is a capacitance value between the
first electrode plate and the second electrode plate when a direct current voltage value is zero,
and the boosted capacitance value is a capacitance value between the first electrode plate and the
second electrode plate when the direct current voltage value is not zero; the determination
module 702 is used for determining a break over voltage and a capacitance change value
between the first electrode plate and the second electrode plate of the MEMS acceleration sensor
chip based on the obtained basic capacitance value and boosted capacitance value between the
first electrode plate and the second electrode plate; and the judging module 703 is used for
judging whether the MEMS acceleration sensor chip is normal according to the basic capacitance
value, the break over voltage and the capacitance change value between the first electrode plate
and the second electrode plate.
All embodiments in the application are described progressively, reference is made to same
and similar parts of the embodiments, and each embodiment puts emphasis on difference with
other embodiments. In particular, as far as the embodiment of the apparatus is concerned, as the
embodiment of the apparatus is substantially similar to the embodiment of the method, the
embodiment of the apparatus is described simply. The related part refers to description of the
embodiment of the method.
It should be further noted that the terms "include", "comprise" or any other variants are
intended to cover non-excludable inclusions, such that a process, method, commodity or
apparatus including a series of elements not only include these elements, but also further include
other elements which are not listed expressly or further include inhered elements of the process,
method, commodity or apparatus. Under a circumstance of no more limitations, for the elements
defined by the term "include one", a condition that there are additional same elements in the
process, method, commodity or apparatus including the elements is not excluded.
The above is merely the embodiments of the application and is not intended to limit the
application. For those skilled in the art, various alternations and changes can be made on the
application. Any modification, equivalent replacement, improvement, etc., made within the spirit
and principle of the application shall be included within the scope of claims of the application.
Claims (10)
1. A method for detecting an MEMS (Micro Electro Mechanical Systems) acceleration
sensor chip, characterized in that the method comprises:
applying a variable direct current voltage to a first electrode plate and a second electrode
plate of the MEMS acceleration sensor chip to enable the second electrode plate to move toward
a direction of the first electrode plate, wherein the first electrode plate is a fixed electrode plate
and the second electrode plate is a movable electrode plate;
applying an alternating current voltage at a preset frequency to the first electrode plate and
the second electrode plate to obtain a basic capacitance value and a boosted capacitance value
between the first electrode plate and the second electrode plate, wherein the basic capacitance
value is a capacitance value between the first electrode plate and the second electrode plate when
a direct current voltage value is zero, and the boosted capacitance value is a capacitance value
between the first electrode plate and the second electrode plate when the direct current voltage
value is not zero;
determining a voltage-capacitance characteristic curve, a break over voltage and a
capacitance change value between the first electrode plate and the second electrode plate of the
MEMS acceleration sensor chip based on the obtained basic capacitance value and boosted
capacitance value between the first electrode plate and the second electrode plate; and
judging whether the MEMS acceleration sensor chip is normal according to the basic
capacitance value, the break over voltage, the capacitance change value and the voltage
capacitance characteristic curve between the first electrode plate and the second electrode plate.
2. The method for detecting the MEMS acceleration sensor chip according to claim 1,
characterized in that the method further comprises:
determining a basic capacitance value, a break over voltage, a capacitance change value and
a voltage-capacitance characteristic curve between the second electrode plate and a third
electrode plate of the MEMS acceleration sensor chip; and
judging whether the MEMS acceleration sensor chip is normal by comparing the basic
capacitance value, the break over voltage, the capacitance change value and the voltage- capacitance characteristic curve between the second electrode plate and the third electrode plate of the MEMS acceleration sensor chip with theoretical design values of corresponding basic capacitance value, break over voltage, capacitance change value and voltage-capacitance characteristic curve between the second electrode plate and the third electrode plate of the
MEMS acceleration sensor chip.
3. The method for detecting the MEMS acceleration sensor chip according to claim 1,
characterized in that applying the variable direct current voltage to the first electrode plate and
the second electrode plate of the MEMS acceleration sensor chip to enable the second electrode
plate to move toward the direction of the first electrode plate specifically comprises:
applying the variable direct current voltage to the first electrode plate and the second
electrode plate of the MEMS acceleration sensor chip; and
adjusting the direct current voltage value based on a preset stepped voltage value to enable
the second electrode plate to move toward the direction of the first electrode,
wherein a moving distance of the second electrode plate is determined by a current direct
current voltage value.
4. The method for detecting the MEMS acceleration sensor chip according to claim 3,
characterized in that adjusting the direct current voltage value based on the preset stepped
voltage value to enable the second electrode plate to move toward the direction of the first
electrode specifically comprises:
adjusting the direct current voltage value based on the preset stepped voltage value to obtain
different direct current voltage values between the first electrode plate and the second electrode
plate to generate electrostatic forces with different amplitudes between the first electrode plate
and the second electrode plate based on the different direct current voltage values so as to
overcome an elastic force generated by deformation of an elastic beam based on movement of
the second electrode plate, wherein the elastic beam is an assembly connected with the second
electrode plate of the MEMS acceleration sensor chip.
5. The method for detecting the MEMS acceleration sensor chip according to claim 1,
characterized in that applying the alternating current voltage at the preset frequency to the first
electrode plate and the second electrode plate to obtain the basic capacitance value and the boosted capacitance value between the first electrode plate and the second electrode plate specifically comprises: applying the alternating current voltage at the preset frequency to the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip to generate a current between the first electrode plate and the second electrode plate; and calculating the basic capacitance value and the boosted capacitance value between the first electrode plate and the second electrode plate based on the generated current information, wherein the current information comprises an amplitude and a phase of the current.
6. The method for detecting the MEMS acceleration sensor chip according to claim 1,
characterized in that the break over voltage has a value corresponding to Vunder a circumstance
that a formula - k result is equal to zero,
wherein, E is a dielectric constant of a medium between the first electrode plate and the
second electrode plate, A is an area of the first electrode plate and the second electrode plate, V is
a direct current voltage value between the first electrode plate and the second electrode plate, d is
a distance between the first electrode plate and the second electrode plate and k is an elastic
coefficient of the elastic beam.
7. The method for detecting the MEMS acceleration sensor chip according to claim 1,
characterized in that judging whether the MEMS acceleration sensor chip is normal according to
the basic capacitance value, the break over voltage and the capacitance change value between the
first electrode plate and the second electrode plate specifically comprises:
comparing the basic capacitance value, the break over voltage, the capacitance change value
and the voltage-capacitance characteristic curve between the first electrode plate and the second
electrode plate of the current MEMS acceleration sensor chip with the theoretical design values
of the corresponding basic capacitance value, break over voltage, capacitance change value and
voltage-capacitance characteristic curve between the first electrode plate and the second
electrode plate of the MEMS acceleration sensor chip; and
determining that the MEMS acceleration sensor chip is abnormal under a circumstance that
difference values between any one or more of the current basic capacitance value, break over voltage, capacitance change value and voltage-capacitance characteristic curve and the theoretical design values of the corresponding basic capacitance value, break over voltage, capacitance change value and voltage-capacitance characteristic curve are greater than preset threshold values.
8. The method for detecting the MEMS acceleration sensor chip according to claim 1,
characterized in that a preset multiple of an absolute value of an alternating current voltage peak
value is smaller than an absolute value of the direct current voltage value when the direct current
voltage value is not zero.
9. The method for detecting the MEMS acceleration sensor chip according to claim 1,
characterized in that before applying the variable direct current voltage to the first electrode plate
and the second electrode plate of the MEMS acceleration sensor chip to enable the second
electrode plate to move toward the direction of the first electrode plate, the method further
comprises:
arranging a first limiting salient point at an edge of a first surface of thefirst electrode plate
of the MEMS acceleration sensor chip and arranging a second limiting salient point at an edge of
a first surface of the third electrode plate so as to prevent the second electrode plate from being
in contact with the first electrode plate or the third electrode plate in the moving process under
the value provided by the direct current voltage.
10. An apparatus for detecting an MEMS acceleration sensor chip, characterized in that the
apparatus comprises:
a voltage output module used for applying a variable direct current voltage to a first
electrode plate and a second electrode plate of the MEMS acceleration sensor chip to enable the
second electrode plate to move toward a direction of the first electrode plate, wherein the first
electrode plate is a fixed electrode plate and the second electrode plate is a movable electrode
plate;
the voltage output module further used for applying an alternating current voltage at a
preset frequency to the first electrode plate and the second electrode plate to obtain a basic
capacitance value and a boosted capacitance value between the first electrode plate and the
second electrode plate, wherein the basic capacitance value is a capacitance value between the first electrode plate and the second electrode plate when a direct current voltage value is zero, and the boosted capacitance value is a capacitance value between the first electrode plate and the second electrode plate when the direct current voltage value is not zero; a determination module used for determining a voltage-capacitance characteristic curve, a break over voltage and a capacitance change value between the first electrode plate and the second electrode plate of the MEMS acceleration sensor chip based on the obtained basic capacitance value and boosted capacitance value between the first electrode plate and the second electrode plate; and a judging module used for judging whether the MEMS acceleration sensor chip is normal according to the basic capacitance value, the break over voltage, the capacitance change value and the voltage-capacitance characteristic curve between the first electrode plate and the second electrode plate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110455222.2A CN113203939B (en) | 2021-04-26 | 2021-04-26 | Detection method and device for MEMS acceleration sensor chip |
| CN202110455222.2 | 2021-04-26 | ||
| PCT/CN2021/094562 WO2022068218A1 (en) | 2021-04-26 | 2021-05-19 | Method and device for checking mems acceleration sensor chip |
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| CN117214552B (en) * | 2023-09-22 | 2024-03-22 | 中国科学院长春光学精密机械与物理研究所 | Conductor surface potential measuring method based on periodic variation of torsion balance |
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| CN103063879A (en) * | 2012-12-28 | 2013-04-24 | 苏州中盛纳米科技有限公司 | Multi-parameter batch test equipment of micro-electromechanical systems (MEMS) acceleration sensor |
| CN104977473A (en) * | 2014-04-09 | 2015-10-14 | 北京卓锐微技术有限公司 | MEMS device capacitance detection method |
| US10545168B2 (en) * | 2016-11-22 | 2020-01-28 | Nxp Usa, Inc. | Microelectromechanical systems device and method |
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| US7284432B2 (en) * | 2005-03-29 | 2007-10-23 | Agency For Science, Technology & Research | Acceleration sensitive switch |
| WO2009120193A1 (en) * | 2008-03-26 | 2009-10-01 | Hewlett-Packard Development Company, L.P. | Capacitive sensor having cyclic and absolute electrode sets |
| US9032777B2 (en) * | 2011-09-16 | 2015-05-19 | Robert Bosch Gmbh | Linearity enhancement of capacitive transducers by auto-calibration using on-chip neutralization capacitors and linear actuation |
| WO2014163076A1 (en) * | 2013-04-02 | 2014-10-09 | 富士電機株式会社 | Capacitance type sensor, and method for correcting non-linear output |
| CN103837706B (en) * | 2014-03-26 | 2015-05-06 | 中国科学院地质与地球物理研究所 | Method, device and system for detecting characteristics of micro-electronic mechanical system (MEMS) acceleration sensor chip |
| CN105259372B (en) * | 2015-10-14 | 2018-07-10 | 华东光电集成器件研究所 | Wafer scale capacitive accelerometer Auto-Test System |
| CN109341744B (en) * | 2018-12-03 | 2020-05-19 | 华中科技大学 | Detection apparatus for variable area formula displacement capacitance |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103063879A (en) * | 2012-12-28 | 2013-04-24 | 苏州中盛纳米科技有限公司 | Multi-parameter batch test equipment of micro-electromechanical systems (MEMS) acceleration sensor |
| CN104977473A (en) * | 2014-04-09 | 2015-10-14 | 北京卓锐微技术有限公司 | MEMS device capacitance detection method |
| US10545168B2 (en) * | 2016-11-22 | 2020-01-28 | Nxp Usa, Inc. | Microelectromechanical systems device and method |
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| CN113203939A (en) | 2021-08-03 |
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