A kind of multi-channel audio processor
Technical field
The present invention relates to field of audio processing, espespecially a kind of multi-channel audio processor.
Background technology
Current intelligent machine is fast-developing, and the competition of each cell phone manufacturer is also more and more fierce.In order to make product more competitive, how effectively utilizing mobile phone space to a greater degree, how more effective prerequisite decline low production cost of ensuring the quality of products, is the target that each Cell Phone Design research and development company is constantly pursued.
In general, receiver and the loud speaker of mobile phone are the different transit systems of two covers, its structural representation as shown in Figure 1, in the course of the work, base band controls the output of receiver by output EARP and EARN of receiver, output to outside audio-frequency power amplifier Audio_PA additionally by audio output Audio_P and Audio_N, and drive loud speaker by this audio-frequency power amplifier Audio_PA, realize the output of audio signal.As can be seen from the figure, within the system, because the receiver of mobile phone and loud speaker two overlap independently path, so not only can take more nervous system space, also improve the cost of design simultaneously.
Along with the development of technology, the two-in-one scheme of receiver and loud speaker two systems is invented, and promoted the use of gradually, structural representation as shown in Figure 2, in the course of the work, base band passes through startup and the shutoff of GPIO port GPIO_0 and GPIO_1 difference control simulation switch and audio-frequency power amplifier, and the two can only select a unlatching at one time, namely, in time selecting audio-frequency power amplifier work, audio playing function is realized; In time selecting analog switch conducting, realize handset function.But because audio-frequency power amplifier generally understands the higher D-type audio power amplifier of efficiency of selection, its output terminals A OUP, AOUN are the PWM waveform that duty ratio changes along with audio frequency signal amplitude, and general high level can reach about 6.5V.And the power vd D2 of analog switch is directly powered by battery, voltage range is generally change between 3.2V ~ 4.35V.As shown in Figure 3, the first control signal EN_SW realizes the conversion of voltage from VL to VDD2 through level translator LevelShift to analog switch internal circuit, and wherein, VL is the power supply that the PMIC of base band produces, and is generally between 1.8V ~ 2.8V.The the second control signal PDB produced after level translator LevelShift as the first control signal EN_SW is high level VDD2, and analog switch cuts out.
When analog switch cuts out time, the waveform of each port of metal-oxide-semiconductor P5 as shown in Figure 4.In figure, metal-oxide-semiconductor P7 and N3 device are the internal circuit that audio process inside is connected with port INP, and wherein diode D4 and D3 is respectively the parasitic diode of metal-oxide-semiconductor P7 and N3.When analog switch turns off, metal-oxide-semiconductor P7 and N3 is generally be off state, then INP end is high-impedance state.The grid voltage control voltage of metal-oxide-semiconductor P5 is VDD2, and as the output level VDD3≤VDD2+Vth of OUP end (wherein, Vth is the conduction threshold of P1), P1 pipe can turn off completely.The change in voltage of OUP end, on the not impact of INP end.Parasitic diode D4 does not have and instead fills with electric current, because the path of OUP to INP is completely cut off completely, so the level of OUP end does not affect audio process internal circuit.But as VDD3>VDD2+Vth, although the grid-control voltage of analog switch is VDD2, metal-oxide-semiconductor P1 is still in conducting state.The level of output OUP directly can be transferred to INP end.Because the level of power vd D1 is generally 1.8V ~ 2.8V, when OUP exports high level VDD3, because the value of VDD3 is much larger than the conduction threshold of VDD1 and parasitic diode D4, that is: VDD3>>VDD1+Vth_D4.So VDD3 can produce very high electric current by metal-oxide-semiconductor P5 at D4 end, and the anti-power vd D1 that is poured into holds.The anti-filling electric current of D4 as shown in Figure 5.The existence of anti-filling electric current, is easy to the damage causing audio process internal components.
Meanwhile, the device that audio process inside is connected with INP, be all generally low-voltage device, breakdown voltage point generally can be lower.When the high level of OUP end is delivered to audio process inside, have the risk causing the breakdown damage of expendable N3 equally.
In addition, due to anti-existence of filling with electric current, OUP end is when high level output, and voltage is dragged down rapidly, causes the distortion of output waveform, distortion, the extreme degradation quality of audio signal.Equally, because VDD1 is poured into electric current in moment, very easily cause the disorder of the voltage status of VDD1, and then cause the operation irregularity of whole system.
Summary of the invention
For the problems referred to above, the present invention aims to provide a kind of multi-channel audio processor, and it with the addition of high level detection module on original receiver and the two-in-one basis of loud speaker two systems, efficiently solves the problem of current flowing backwards in audio processing modules.
Technical scheme provided by the invention is as follows:
A kind of multi-channel audio processor, comprise: audio processing modules, for controlling the analog switch module of receiver output signal break-make, audio power amplification module, maximum level detection module and the dio Output Modules for exporting described receiver output signal or described audio output signal for the power amplification and break-make that control audio output signal, wherein
The input of described analog switch module is connected with the receiver output of described audio processing modules, and the first control signal that the break-make of described analog switch module is exported by described audio processing modules controls;
The input of described audio power amplification module is connected with the audio output of described audio processing modules, and the second control signal that the break-make of described audio power amplification module is exported by described audio processing modules controls;
The input of described dio Output Modules is connected with the output of described analog switch module and described audio power amplification module respectively;
Described maximum level detection module is connected with described analog switch module and described audio power amplification module respectively, described maximum level detection module obtains the first output level of described analog switch module and the power level of the second output level and described audio power amplification module respectively, and three level values obtained are compared and obtained maximum level value, and using the output level of described maximum level value as described analog switch module.
In the technical program, first output level of analog switch module and the power level of the second output level and described audio power amplification module compare by high level detection module, and using the output as analog switch module the highest for level value, no longer there will be the problem of current flowing backwards like this.
Preferably, described maximum level detection module comprises two-way high level selection circuit, and wherein, the first output level of described analog switch module and the second output level are compared by first via high level selection circuit, and using larger level value as output; The power level of the level value that described first high level selection circuit exports by the second road high voltage level selection circuit and described audio power amplification module contrasts, and using larger level value as output, to realize the maximum level value in three level values as output.
Preferably, described maximum level detection module comprises two-way high level selection circuit, wherein, the first output level of described analog switch module and the power level of described audio power amplification module are compared by first via high level selection circuit, and using larger level value as output; Second output level of the level value that described first high level selection circuit exports by the second road high voltage level selection circuit and described analog switch module contrasts, and using larger level value as output, to realize the maximum level value in three level values as output.
Preferably, described maximum level detection module comprises two-way high level selection circuit, wherein, the second output level of the power level of described audio power amplification module and described analog switch module is compared, using larger level value as output by first via high level selection circuit; First output level of the level value that described first high level selection circuit exports by the second road high voltage level selection circuit and described analog switch module contrasts, and using larger level value as output, to realize the maximum level value in three level values as output.
In the technical program, in maximum level detection module, be provided with two-way high level selection circuit, three level values obtained are compared, between two until compare maximum level value, then using this maximum level value as output.
Preferably, described high level selection circuit comprises: the first resistance, the second resistance, the first transistor, transistor seconds, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, Schmidt trigger, the first inverter, the second inverter and the 3rd inverter, wherein;
One end of described first resistance is connected with the first extraneous incoming level, and the other end is connected with the source electrode of the first transistor; One end of described second resistance is connected with the second extraneous incoming level, and the other end is connected with the source electrode of transistor seconds; The grid of described the first transistor is connected with drain electrode; The grid of described transistor seconds is connected with the grid of the first transistor, and drain electrode is connected with the input of Schmidt trigger; The output of described Schmidt trigger is connected with the input of the first inverter; The output of described first inverter is connected with the input of the second inverter; The output of described second inverter is connected with the input of the 3rd inverter and the grid of the 4th transistor respectively; The output of described 3rd inverter is connected with the grid of third transistor; The drain electrode of described third transistor is connected with the drain electrode of described 4th transistor and as the output of described high level selection circuit;
The drain electrode of described 5th transistor is connected with the drain electrode of the first transistor, and grid is connected with the grid of the 6th transistor, and source electrode is connected with the source electrode of the 6th transistor and ground connection; The drain electrode of described 6th transistor is connected with the drain electrode of transistor seconds;
Described Schmidt trigger, the first inverter, the second inverter and third transistor respectively incoming level extraneous with first are connected; Described 3rd inverter and the 4th transistor respectively incoming level extraneous with second are connected; Described 5th transistor is connected with bias voltage with the grid of the 6th transistor.
Preferably, described third transistor and described 4th transistor comprise the first parasitic diode and the second parasitic diode, described first parasitic diode is connected in parallel on drain electrode and the source electrode two ends of described third transistor, and described second parasitic diode is connected in parallel on drain electrode and the source electrode two ends of described 4th transistor.
Preferably, described the first transistor, transistor seconds, third transistor and the 4th transistor are nmos pass transistor; Described 5th transistor and the 6th transistor are PMOS transistor.
In multi-channel audio processor provided by the invention, realize the Real-Time Monitoring to the first output level of analog switch module and the power level of the second output level and described audio power amplification module by maximum level detection module, and therefrom select maximum level value as output level; What such analog switch module exported is maximum level value, thus middle transistor P5 and P6 of analog switch module (as shown in Figure 2) is when pass section, the voltage of port PDB is this maximum level value, the situation of the weak conducting of transistor P5 and P6 would not be there is, thus avoid the appearance of current flowing backwards phenomenon, each device simultaneously protected in multi-channel audio processor can not damage, and substantially increases consistency and the reliability of device;
In addition, also the waveform of output will be caused to occur the situations such as distortion, distortion because of anti-existence of filling with electric current, stabilize whole system.
Accompanying drawing explanation
Below by clearly understandable mode, accompanying drawings preferred implementation, is further described a kind of above-mentioned characteristic of multi-channel audio processor, technical characteristic, advantage and implementation thereof.
The audio process structural representation of the transit system that Fig. 1 to be receiver and the loud speaker of traditional mobile phone be two covers are different;
Fig. 2 is the two-in-one audio process structural representation of traditional receiver and loud speaker;
Fig. 3 is the simulant electronic switch internal circuit diagram shown in Fig. 2;
Fig. 4 for shown in Fig. 2 simulant electronic switch close time, the oscillogram of each port of metal-oxide-semiconductor P5;
Fig. 5 for shown in Fig. 2 simulant electronic switch close time, the anti-filling map of current of D4 in audio process;
Fig. 6 is the structural representation of multi-channel audio processor provided by the invention;
Fig. 7 is maximum level detection module Zhong mono-road high level selection circuit figure in the present invention;
Fig. 8 is maximum level detection module output waveform figure in the present invention;
Fig. 9 be add maximum level detection module in the present invention after, the oscillogram of each port of metal-oxide-semiconductor P5 in simulant electronic switch module.
Reference numeral:
R1. the first resistance, R2. second resistance, P1. the first transistor, P2. transistor seconds,
P3. third transistor, P4. the 4th transistor, N1. the 5th transistor, N2. the 6th transistor,
Schmitt. Schmidt trigger, INV1. first inverter, INV2. second inverter,
INV3. the 3rd inverter, the extraneous incoming level of VIN1. first, the extraneous incoming level of VIN2. second,
VBN. bias voltage, D1. first parasitic diode, D2. second parasitic diode,
GPIO_0. the first control signal, GPIO_1. second control signal, LevelShift. level translator,
VDD1. the first level, VDD2. second electrical level, VDD3. three level, VL. the 4th level,
VOP. the first output level, VON. second output level
Embodiment
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, contrast accompanying drawing is illustrated the specific embodiment of the present invention below.Apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings, and obtain other execution mode.
Be illustrated in figure 6 the structural representation of multi-channel audio processor provided by the invention, as can be seen from the figure, this multi-channel audio processor comprises: audio processing modules, analog switch module, audio power amplification module, maximum level detection module and dio Output Modules.Wherein, audio processing modules is powered by the first level VDD1, analog switch module is powered by second electrical level VDD2, audio power amplification module is powered by three level VDD3, be noted that, here the first level VDD1, the second electrical level VDD2 that mention, the level value of three level VDD3 select as the case may be, and we here specifically do not limit.
Input INP with INN of analog switch module is connected with receiver output EARP and EARN of audio processing modules, and the first control signal GPIO_0 that analog switch module middle port EN_SW audio reception processing module sends, to control the break-make of receiver output signal.As can be seen from Fig. 3 we, level translator LevelShift and transistor P5 and P6 is comprised in analog switch module, wherein, control signal EN_SW realizes the conversion from the 4th level VL to second electrical level VDD2 through level translator LevelShift, here VL is PMIC (the Power Management IC of base band, power management integrated circuit) power supply that produces, generally between 1.8V-2.8V.In the course of the work, when the output signal PDB that control signal EN_SW produces after level translator LevelShift is high level (value of this high level is second electrical level VDD2), then this analog switch module is in the state of closedown.
Input AIP with AIN of audio power amplification module is connected with audio output Audio_P and Audio_N of audio processing modules, and the second control signal GPIO_1 that the port EN_AP audio reception processing module in audio power amplification module sends, to control break-make and the power amplification of audio output signal.What selected by audio power amplification module is D-type audio power amplifier, as can be seen from Figure 2, the output terminals A OUP of this audio power amplification module and AOUN is PWM (the Pulse Width Modulation that duty ratio changes along with audio frequency signal amplitude, pulse width modulation) waveform, and in this PWM waveform, high level is the level value of three level VDD3.Be noted that in other embodiments, audio power amplification module, also can use the audio-frequency power amplifier of other types, as long as it can realize object of the present invention, is all included in content of the present invention.
The input of dio Output Modules is connected with output OUP and OUN of analog switch module and the output terminals A OUP of audio power amplification module and AOUN respectively.When the closedown of analog switch module, audio power amplification module are connected, the audio output signal that dio Output Modules output audio processing module sends; Similar, when analog switch module is connected, when audio power amplification module is closed, the receiver output signal that dio Output Modules output audio processing module sends.In a particular embodiment, this dio Output Modules can be loud speaker, and certainly, in other embodiments, this dio Output Modules can be other audio output apparatus, and we are not specifically limited at this.
Maximum level detection module respectively with output OUP and OUN of analog switch module, and the power end of audio power amplification module connects, to obtain the first output level VOP and the second output level VON of analog switch module respectively, and the power level of audio power amplification module (i.e. above-mentioned three level VDD3), and three level values obtained are compared and obtained maximum level value, and using the output level of maximum level value as analog switch module, it is by realizing Real-Time Monitoring to above-mentioned three level values, to reach the absolute turn-on and turn-off of analog switch module, efficiently avoid the current flowing backwards phenomenon occurred in audio processing modules.Specifically, two-way high level selection circuit is comprised at maximum level detection module, wherein, in first output level VOP of analog switch module and the power level of the second output level VON and audio power amplification module any two compare by first via high level selection circuit, and using larger level value as output; That level value of comparison is not had to contrast in the level value that first high level selection circuit exports by the second road high voltage level selection circuit and first via high level selection circuit, and using larger level value as output, to realize the maximum level value in three level values as output; As: compared by the first output level VOP and the second output level VON in the first high level selection circuit, the Output rusults of the first high level selection circuit and the power level of audio power amplification module are then compared by the second high level selection circuit.
Specifically, as shown in Figure 7, high level selection circuit in the present invention comprises: the first resistance R1, the second resistance R2, the first transistor P1, transistor seconds P2, third transistor P3, the 4th transistor P4, the 5th transistor N1, the 6th transistor N2, Schmidt trigger Schmitt, the first inverter INV1, the second inverter INV2 and the 3rd inverter INV3, wherein; One end of first resistance R1 is connected with the first extraneous incoming level VIN1, and the other end is connected with the source electrode of the first transistor P1; One end of second resistance R2 is connected with the second extraneous incoming level VIN2, and the other end is connected with the source electrode of transistor seconds P2; The grid of the first transistor P1 is connected with drain electrode; The grid of transistor seconds P2 is connected with the grid of the first transistor P1, and drain electrode is connected with the input of Schmidt trigger Schmitt; The output of Schmidt trigger Schmitt is connected with the input of the first inverter INV1; The output of the first inverter INV1 is connected with the input of the second inverter INV2; The output of the second inverter INV2 is connected with the input of the 3rd inverter INV3 and the grid of the 4th transistor P4 respectively; The output of the 3rd inverter INV3 is connected with the grid of third transistor P3; The drain electrode of third transistor P3 is connected with the drain electrode of the 4th transistor P4 and as the output (namely selecting level value larger in the first extraneous incoming level VIN1 and the second extraneous incoming level VIN2 as exporting) of high level selection circuit; The drain electrode of the 5th transistor N1 is connected with the drain electrode of the first transistor P1, and grid is connected with the grid of the 6th transistor N2, and source electrode is connected with the source electrode of the 6th transistor N2 and ground connection; The drain electrode of the 6th transistor N2 is connected with the drain electrode of transistor seconds P2; Schmidt trigger Schmitt, the first inverter INV1, the second inverter INV2 and third transistor P3 respectively incoming level VIN1 extraneous with first are connected; 3rd inverter INV3 and the 4th transistor P4 respectively incoming level VIN2 extraneous with second are connected; 5th transistor N1 is connected with bias voltage VBN with the grid of the 6th transistor N2.More specifically, here, the first transistor P1, transistor seconds P2, third transistor P3 and the 4th transistor P4 are nmos pass transistor; 5th transistor N1 and the 6th transistor N2 is PMOS transistor.In a particular embodiment, the first output level VOP that above-mentioned first extraneous incoming level VIN1 can export for analog switch module or the power level of the second output level VON or audio power amplification module, the second extraneous incoming level VIN2 be with first extraneous incoming level VIN1 different when any one in a level value.First resistance R1 is identical with the resistance of the second resistance R2, and the 5th transistor N1 is identical with the model of the 6th transistor N2, as current source load; The first transistor P1 and transistor seconds P2 is as input to pipe, and model is identical.Be noted that in the present invention, we are not specifically limited the concrete model of above-mentioned transistor, as long as it can realize object of the present invention, are all included in content of the present invention.
In the course of the work, when the second extraneous incoming level VIN2 is greater than the first extraneous incoming level VIN1, then drain electrode (the input of Schmidt trigger Schmitt of transistor seconds P2, figure mid point X) export the first high level signal (value of this first high level signal is the second extraneous incoming level VIN2), this high level signal is through Schmidt trigger Schmitt subsequently, first inverter INV1, the output (Y point) at the second inverter INV2 after the second inverter INV2 exports the first low level signal; And then this first low level signal exports the second high level signal (value of this second high level signal is the second extraneous incoming level VIN2) at output (Z point) after the 3rd inverter INV3, like this, third transistor P3 turns off, 4th transistor P4 conducting, thus this high level selection circuit output level Vmax is the second extraneous incoming level VIN2.Similar, when the second extraneous incoming level VIN2 is less than the first extraneous incoming level VIN1, then drain electrode (the input of Schmitt trigger of transistor seconds P2, point X) export the second low level signal (0V), this second low level signal is through Schmidt trigger Schmitt subsequently, first inverter INV1, exports third high level signal (value of this third high level signal is the first extraneous incoming level VIN1) at the output (Y point) of the second inverter INV2 after the second inverter INV2; And then the output of this third high level signal after the 3rd inverter INV3 (Z point) exports the 3rd low level signal, like this, third transistor P3 conducting, 4th transistor P4 disconnects, and thus this high level selection circuit output voltage Vmax is the first extraneous incoming level VIN1.Like this, just ensure that output voltage Vmax is higher that between the first extraneous incoming level VIN1 and the second extraneous incoming level VIN2.
Because we will compare to three level values in the present invention, thus need the above-mentioned high level selection circuit of two-way, just be can be implemented in the first output level VOP of analog switch module and the power level of the second output level VON and described audio power amplification module by this circuit diagram and select maximum level value as output.In this embodiment, first we choose the voltage Vmax of a higher value between the first output level VOP of analog switch module and the second output level VON, and then selects higher value VH as the output of whole module between the voltage Vmax exported and the power level of audio power amplification module above again.Like this, just ensure that voltage VH is the high level between these three voltages.Because the first output level VOP, the second output level VON change between height, the power level of audio power amplification module is generally more stable, and the voltage relationship between the power level of the first output level VOP, the second output level VON, audio power amplification module and voltage VH as shown in Figure 8.After adding maximum level selector, there is not anti-phenomenon of filling with in all paths, the waveform in comparison diagram 4, in the present invention, each node waveform of analog switch module as shown in Figure 9.Visible, when analog switch module is closed, what the substrate due to switch connect is all maximum potential, transistor P5 and P6 thoroughly can be turned off, not anti-electric current of filling with.Avoid the interference to output signal, and the damage to audio process internal components.
As another embodiment, third transistor P3 and the 4th transistor P4 are provided with the first parasitic diode and the second parasitic diode, wherein, first parasitic diode is connected in parallel on drain electrode and the source electrode two ends of third transistor P3, and the second parasitic diode is connected in parallel on drain electrode and the source electrode two ends of the 4th transistor P4.Like this, because two parasitic diodes are all connected to the output Vmax of high level selection circuit, thus the first parasitic diode and the second parasitic diode can keep reverse-biased always, prevent from leaking electricity to the first extraneous input and the second extraneous input from the output Vmax of high level selection circuit.
It should be noted that above-described embodiment all can independent assortment as required.The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.