CN104960278A - Method for manufacturing single-surface thin type metal substrate - Google Patents
Method for manufacturing single-surface thin type metal substrate Download PDFInfo
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- CN104960278A CN104960278A CN201510165455.3A CN201510165455A CN104960278A CN 104960278 A CN104960278 A CN 104960278A CN 201510165455 A CN201510165455 A CN 201510165455A CN 104960278 A CN104960278 A CN 104960278A
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Abstract
The invention provides a method for manufacturing a single-surface thin type metal substrate, and the method comprises the following steps: butting two polyimide films, in order to form a first coating surface and a second coating surface; carrying out chemical nickel plating work on the first coating surface and the second coating surface, in order to form a nickel layer respectively; then carrying out electro-coppering work, in order to form a copper layer on each nickel layer; separating the two polyimide films from the joint position, in order to form two single-surface thin type metal substrates. After the two polyimide films are butted, one nickel layer and one copper layer are then formed simultaneously in one metallization technology, that is two single-surface thin type metal substrates are manufactured at the same time, so that production cost is reduced, and the metallization technology can meet the thin type demand including fine wire, micropore and high density.
Description
Technical field
The invention relates to a kind of manufacture method of one side thin metal substrate, refer to a kind of manufacture method of single substrate of thin copper especially, fine rule, micropore and highdensity characteristic can be had, and the method effectively reducing production cost can be reached.
Background technology
Pliability copper foil laminates (Flexible copper clad laminate, FCCL) be widely used in electronic industry as circuit substrate (PCB), FCCL is except having light, thin and flexible advantage, also have outside the feature of electrical property, hot property and excellent heat resistance with polyimide film, its lower dielectric constant (Dk) property, the signal of telecommunication is transmitted fast, good hot property, assembly can be made to be easy to cooling, higher vitrification point (Tg), can make assembly well run at a higher temperature.A kind of one side pliability copper foil laminates (FCCL) has following manufacture,
1) rubbing method (casting type): (prolong swaging) after first forming Copper Foil, again by polyamides Asia peace film (PI) presoma polyamic acid (Polyimide acid, be called for short PAA) coat on Copper Foil, through heating, PAA endless loop dewatered and form PI film, although this technique is simple, but because the solid content of PAA solution is about 15-30%, make the moisture that must remove a large amount of solvents and PAA endless loop dehydration generation in the process of formation PI film, not only reduce speed of production, also easily cause stress-retained, and make the finished product of two layers of obtained flexible copper foil substrate easily curling and affect dimensional stability.In addition, PI film is directly shaping on Copper Foil, so only one side layers of copper can be made, and Copper Foil must be coated with for PAA by tool certain thickness, Copper Foil is made to be difficult to be contracted to less than 12 microns, or when being contracted to less thickness, the cost of Copper Foil will be higher, the applicable product of copper clad laminate institute that thus rubbing method is obtained will be by limited.
2) sputtering method (sputtering)/galvanoplastic (plating type): it mainly comprises the following steps, is anhydrated in PI film surface, the process of electricity slurry is with alligatoring PI film surface, sputter contains the alloy of chromium as intermediary layer, spatter copper-plated metal as crystal seed layer, with galvanoplastic copper facing, layers of copper is thickened.Due to thinner layers of copper can be obtained with sputtering method (sputtering)/galvanoplastic (plating type), therefore the advantage of tool preferably thin line capacity, but, because sputtering method technique needs to carry out in vacuum environment except electroplating technology, wherein because the moisture content of PI film is about 1-3%, vacuum can be caused when dewatering in a vacuum not easily to maintain, and its ease gas rate (outgasing) easily causes the high load capacity of vavuum pump, in addition, due to the high-insulativity of PI film in sputter process, its surface easily produces electrostatic and makes sputter copper that the problem of pin hole (pinhole) often occur.Moreover, in order to increase the tack of layers of copper and PI film and the intermediary layer increased.If etching not exclusively in the etch process, circuit root the trace chromium metal that remains can cause the problem of effect of ion migration (ion migration), and affect high-frequency circuit board quality, therefore, sputtering method (sputtering)/galvanoplastic (plating type) are though the one side copper clad laminate of institute's technique can reach fine rule, micropore and highdensity demand, but its integral device and manufacturing cost too high, thus, cannot reach and reduce the demand of production cost.
Summary of the invention
The object of this invention is to provide a kind of manufacture method of one side thin metal substrate, so that one side thin metal substrate can be manufactured, and production cost can be reduced again and meet fine rule, micropore and highdensity demand.
For achieving the above object, the manufacture method of one side thin metal substrate provided by the invention, it comprises provides an adhesion layer; Two polyimide films are provided, to be connected laminating by this adhesion layer, to form one first coating surface and the second coating surface, chemical nickel plating operation is carried out in this first coating surface and this second coating surface, to form a nickel dam, carried out electro-coppering operation, on this nickel dam, formed a layers of copper; And this two polyimide film is separated in docking joint place, to form two one side thin bases.
By as above manufacture method, when manufacturing one side thin metal substrate, due to be by two polyimide films laminating after together metallize (carrying out the coat of metal), to form a nickel dam level metal level respectively, again by the polyimides UF membrane after metallization, therefore, the present invention is in same metallization process, and can simultaneously by two polyimides film metallizations, to make two one side thin metal substrates, therefore, it can obtain relatively low manufacturing cost, substrate surfaces (plating) on polyimide film, fine rule can be obtained, micropore and highdensity slim demand.
Accompanying drawing explanation
Fig. 1 is two polyimide film sectional views of the present invention.
Fig. 2 is the laminating sectional view of Fig. 1.
Fig. 3 is the sectional view of Fig. 2 nickel plating.
Fig. 4 is the copper-plated sectional view of Fig. 3.
Fig. 5 is the embodiment that another polyimide film of the present invention sticks together.
Fig. 6 is the sectional view of the two polyimides UF membrane of Fig. 5.
Symbol description in accompanying drawing
10,12 2 polyimide films; 14 adhesion layers; 141 PETs (PET); 142 viscoses; 16 first coating surfaces; 18 second coating surfaces; 20 nickel dams; 22 layers of copper; 24 metal laminates.
Detailed description of the invention
The manufacture method of one side thin metal substrate of the present invention, refer to shown in Fig. 1, first, two polyimide films 10 are provided, 12 (dielectric materials), polyimide film 10 in the present embodiment, 12, monomer whose composition and the method for preparing do not limit especially, can be undertaken by the usual technology of this area, its thickness can be 7-50 micron (μm), and can particle fillers be added with in this polyimide film, the stability of substrate can be increased, and make by etching the particle fillers interspersing among polyimide film top layer, make two polyimide films 10, (this is known technology in the formation nick hole, top layer of 12, do not show in figure).
Refer to Fig. 2 to show, two polyimide films 10,12 are docked laminating mutually, be two polyimide films 10,12 are fitted by an adhesion layer 14 (the present embodiment is for viscose) in the present embodiment, and form the first exposed coating surface 16 and the second coating surface 18.
Refer to Fig. 3 to show, two polyimide films 10,12 of laminating are carried out electroless plating deposition (the present embodiment carries out in volume to volume mode), a nickel dam 20 is made to be formed on the first coating surface 16 and the second coating surface 18 respectively, nickel dam 20 can be combined with this nick hole, to promote the bond strength of nickel dam 20 and the first coating surface 16 and the second coating surface 18, and the thickness of nickel dam can be 0.05 ~ 0.2 micron.
Refer to Fig. 4, two polyimide films 10,12 being coated with nickel dam 20 are deposited a layers of copper 22 (the present embodiment carries out in volume to volume mode) on nickel dam 20 with galvanoplastic, the thickness of layers of copper 22 can be 0.2 ~ 12 micron, and then complete the metallization process of two polyimide films 10,12, make two polyimide films 10,12 form a metal laminate 24 respectively in its first coating surface 16 and the second coating surface 18.
Refer to Fig. 5 to show, for another embodiment of the present invention, wherein adhesion coating 14 is made up of a PET (PET) 141 and two coating viscoses 142 thereof, to form a compound then material, two polyimide films 10,12 are attached on viscose 142, and overall structure can be made to have reinforcing effect, to increase the stability of manufacturing operation, and when being torn off by two polyimide films 10,12, viscose 142 comparatively can not residue on polyimide film 10,12.
Refer to Fig. 6 to show, two polyimide films 10,12 bonded to each other completing metal laminate 20 are separated, two one side thin metal substrates can be obtained.
By as above manufacture method, when manufacturing one side thin metal substrate, owing to being by metallization (carry out the coat of metal, can thin metal be obtained) together after two polyimide films 10,12 laminatings, to form a metal laminate, again by two polyimides UF membrane after metallization, and in one technique, two one side thin metal substrates can be made simultaneously, it can obtain relatively low manufacturing cost, and make metal laminate with plating mode, fine rule, micropore and highdensity demand can be obtained.
Claims (5)
1. a manufacture method for one side thin metal substrate, comprises the following steps:
One adhesion layer is provided;
Two polyimide films are provided, mutually dock laminating by this adhesion layer, to form one first coating surface and one second coating surface;
In this first coating surface and this second coating surface theory of evolution nickel plating operation, to form a nickel dam respectively;
Carry out an electro-coppering operation, on this nickel dam, form a layers of copper; And
This two polyimide film is separated in joint place, to form two one side thin metal substrates.
2. method according to claim 1, wherein, this adhesion layer is polyethylene terephthalate and the viscose coating its two sides, and this two polyimide film is attached on this viscose respectively.
3. method according to claim 1, wherein, the thickness of this nickel dam is 0.05 ~ 0.2 micron, and this copper layer thickness is 0.2 ~ 12 micron.
4. method according to claim 1, wherein, this chemical nickel plating and electro-coppering operation carry out in volume to volume mode.
5. method according to claim 1, wherein, after separation two polyimide film, carries out removing the viscose operation being attached to this polyimide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510165455.3A CN104960278A (en) | 2015-04-09 | 2015-04-09 | Method for manufacturing single-surface thin type metal substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510165455.3A CN104960278A (en) | 2015-04-09 | 2015-04-09 | Method for manufacturing single-surface thin type metal substrate |
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| CN104960278A true CN104960278A (en) | 2015-10-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510165455.3A Pending CN104960278A (en) | 2015-04-09 | 2015-04-09 | Method for manufacturing single-surface thin type metal substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114075654A (en) * | 2020-08-22 | 2022-02-22 | 昆山鑫美源电子科技有限公司 | Preparation method of conductive film, current collection and transmission material and energy storage device |
| WO2022041447A1 (en) * | 2020-08-22 | 2022-03-03 | 昆山鑫美源电子科技有限公司 | Conductive thin film, method for manufacturing conductive thin film, current collecting and transmitting material, and energy storage apparatus |
-
2015
- 2015-04-09 CN CN201510165455.3A patent/CN104960278A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114075654A (en) * | 2020-08-22 | 2022-02-22 | 昆山鑫美源电子科技有限公司 | Preparation method of conductive film, current collection and transmission material and energy storage device |
| WO2022041445A1 (en) * | 2020-08-22 | 2022-03-03 | 昆山鑫美源电子科技有限公司 | Method for preparing conductive film, current collection and transmission material, and energy storage apparatus |
| WO2022041447A1 (en) * | 2020-08-22 | 2022-03-03 | 昆山鑫美源电子科技有限公司 | Conductive thin film, method for manufacturing conductive thin film, current collecting and transmitting material, and energy storage apparatus |
| CN114075654B (en) * | 2020-08-22 | 2023-03-17 | 昆山鑫美源电子科技有限公司 | Preparation method of conductive film, current collection and transmission material and energy storage device |
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Application publication date: 20151007 |
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