CN104953211A - L-waveband externally-loaded filter bank with capacity of orthogonal power distribution - Google Patents
L-waveband externally-loaded filter bank with capacity of orthogonal power distribution Download PDFInfo
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Abstract
The invention relates to an L-waveband filter with capacity of orthogonal power distribution. The filter adopts a multi-layer low-temperature co-fired ceramic technology for implementation. The filter comprises a surface mounted 50-ohm impedance input/output interface, an inductor with a double-helix structure, a plate capacitor, a built-in tantalum resistor between two output ports of a power distributer, a broadside coupled strip line with a double-helix structure as well as a level-four resonance level realized by multilayer strip lines. The filter has the advantages of power distribution, multiple functions, capacity of orthogonality, simplicity and convenience in use, low insertion loss, easiness in debugging, light weight, small size, high reliability, good electrical performance, good temperature stability, low cost, capacity of mass production and the like, and is applicable to occasions and corresponding systems, having critical requirements for size, electrical performance, temperature stability and reliability, of corresponding L-waveband communication, satellite communication and the like.
Description
Technical field
The present invention relates to a kind of filter, particularly the outer load of a kind of L-band can orthogonal merit filter-divider group.
Background technology
In recent years, along with the developing rapidly of microminiaturization of mobile communication, satellite communication and Defensive Avionics System, high-performance, low cost and miniaturization have become the developing direction of microwave current/RF application, all have higher requirement to the performance of microwave device, size, reliability and cost.The development of material science and technology and electromagnetic technique is depended in the miniaturization of microwave device and lightweight, the size of device is substantially reduced, for the miniaturization of microwave passive component and lighting are had laid a good foundation based on low temperature co-fired technology (LTCC technology) sandwich construction.Power splitter, coupler and filter are the important composition parts in various microwave integrated circuit always, and the leading indicator describing this component capabilities has: frequency range, isolation, the degree of coupling, distribution loss, standing-wave ratio, insertion loss, phase balance, temperature stability, volume, weight, reliability etc.
LTCC is a kind of Electronic Encapsulating Technology, adopts multi-layer ceramics technology, passive component can be built in medium substrate inside, and also active element can be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC technology all shows many merits in cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and flexibility and high frequency performance etc., has become the mainstream technology of passive integration.The advantages such as it has high q-factor, is convenient to embedded passive device, and thermal diffusivity is good, and reliability is high, high temperature resistant, punching shake, utilize LTCC technology, can well process size little, precision is high, and tight type is good, the microwave device that loss is little.Because LTCC technology has the integrated advantage of 3 D stereo, be widely used for manufacturing various microwave passive components at microwave frequency band, the height realizing passive component is integrated.Based on the stack technology of LTCC technique, can realize three-dimensional integrated, thus size is little, lightweight, performance is excellent, reliability is high, batch production performance consistency is good and the plurality of advantages such as low cost to make various miniature orthogonal utensil have, utilize its three-dimensional integrated morphology feature, can realize L-band built-in resistor can orthogonal merit filter-divider.Can orthogonal merit filter-divider group but there is no the outer load of a kind of L-band in prior art.
Summary of the invention
The object of the present invention is to provide the combination of the level Four resonance filter of a kind of power splitter of L-band and the coupler of L-band and L-band to realize that loss is little, isolation is high, volume is little, can orthogonal, easy to use, lightweight, reliability is high, excellent electrical property, structure are simple, rate of finished products is high, good, that cost is low, temperature performance the is stable L-band built-in resistor of batch consistency can orthogonal merit filter-divider.
The technical solution realizing the object of the invention is: the outer load orthogonal merit filter-divider group of a kind of L-band, comprise a L-band power splitter, two L-band couplers and four L-band filters, two output ports of L-band power splitter connect the input of a L-band coupler respectively separately, straight-through end and the coupled end of each L-band coupler are all connected the input of a L-band filter, and isolated port is mated with 50 Ohmic resistance ground connection;
The power splitter of described L-band comprises output port P2, P3 of surface-pasted 50 ohmage input port P1, the first input inductance L in1, the first spiral inductance L1, the second spiral inductance L2, ground capacity C1, shunt capacitance C2, built-in tantalum resistance R, the first outputting inductance Lout1, the second outputting inductance Lout2 and two surface-pasted 50 ohmage; The coupler of L-band comprises the input port P4 of surface-pasted 50 ohmages, comprises surface-pasted 50 ohmage input port P1, matched line T1, ground floor double-stranded broadside coupled striplines U1, matched line T2, surface-pasted 50 ohmage straight-through port P5, surface-pasted 50 ohmage coupling port P6, matched line T3, the double-stranded broadside coupled striplines U2 of the second layer, matched line T4, isolated port P7; The level Four filter of L-band comprises the input port P8 of surface-pasted 50 ohmages, the level Four resonance level U3 that second input inductance L in2, strip line realize, Z-type electric capacity Z, the output port P9 of the 3rd outputting inductance Lout3 and surface-pasted 50 ohmages;
Wherein, in L-band built-in resistor power splitter, input inductance L in1 is connected with input port P1, first spiral inductance L1 and the second spiral inductance L2 lays respectively at the two ends of input inductance L in1, first spiral inductance L1 and the second spiral inductance L2 is helical structure from bottom to top, input inductance L in1 is connected with ground capacity C1 by a joint pin, first spiral inductance L1 is in parallel with the second spiral inductance L2, ground capacity (C1) is positioned at the below of the first spiral inductance L1 and the second spiral inductance L2, absorption resistance R is parallel to the first spiral inductance L1 and the second spiral inductance L2 two ends, electric capacity C2 is in parallel with absorption resistance R, absorption resistance is positioned at immediately below shunt capacitance C2, one end of absorption resistance R is connected with the first outputting inductance Lout1, absorption resistance R the other end be connected with the second outputting inductance Lout2, first outputting inductance Lout1 is connected with surface-pasted 50 ohmage first output port P2, second outputting inductance Lout2 is connected with surface-pasted 50 ohmage second output port P3.
In L-band coupler, matched line T1 one end is connected with input port P4, the other end is connected with one end of the double-stranded broadside coupled striplines U1 of ground floor, the other end of the double-stranded broadside coupled striplines U1 of ground floor is connected with matched line T2, the other end of matched line T2 is connected with straight-through port P5, matched line T3 one end is connected with coupling port P6, the other end is connected with one end of the double-stranded broadside coupled striplines U2 of the second layer, the other end of the double-stranded broadside coupled striplines of the second layer is connected with one end of matched line T4, the other end of matched line T4 is connected with isolated port P7.
In L-band level Four filter, second input inductance L in2 one end is connected with input port P8, the second input inductance L in2 other end is connected with level Four resonance level left side intermediate layer L21, on the right of level Four resonance level, intermediate layer L24 is connected with one end of the 3rd outputting inductance Lout3 again, and the other end of the 3rd outputting inductance Lout3 is connected with surface-pasted 50 ohmage second output ports.Z-type electric capacity is positioned at immediately below level Four resonance level.Wherein, the first order in level Four resonance level is made up of three ply board, and the second level is made up of three ply board, the third level be made up of three ply board and the fourth stage be made up of three ply board.
The present invention compared with prior art, its remarkable advantage is: (1) due to the present invention adopt that low-loss low-temperature co-burning ceramic material, 3 D stereo are integrated, the built-in resistance of power splitter two output and L-band built-in resistor power splitter and two L-band level Four resonance filters are combined, therefore, easy to use, without the need to can directly use in the external load of power splitter; (2) output signal orthogonal; (3) volume is little, lightweight, reliability is high; (4) excellent electrical property; (5) cost is low; (6) circuit structure is simple, can be mass-produced.
Accompanying drawing explanation
Fig. 1 is that L-band of the present invention can orthogonal merit filter-divider overall structure block diagram.
Fig. 2 is the structural representation of L-band power splitter of the present invention.
Fig. 3 is the structural representation of L-band coupler of the present invention.
Fig. 4 is the structural representation of L-band level Four resonance filter of the present invention.
Fig. 5 is L-band power splitter insertion loss curve of the present invention.
Fig. 6 is the curve of the isolation of L-band power splitter of the present invention.
Fig. 7 is the curve of the degree of coupling of L-band coupler of the present invention, standing wave and isolation.
Fig. 8 is the coupled end of L-band coupler of the present invention and the phase difference curve of isolation.
Fig. 9 is Insertion Loss and the stationary wave characteristic curve of L-band level Four resonance filter of the present invention.
Figure 10 is that L-band of the present invention can the coupled end filter curve of output of orthogonal merit filter-divider.
Figure 11 is that L-band of the present invention can the straight-through end filter end curve of output of orthogonal merit filter-divider.
Figure 12 is that L-band of the present invention can the filter input end standing wave curve of orthogonal merit filter-divider.
Figure 13 is that L-band of the present invention the same coupler termination filter of orthogonal merit filter-divider can lead directly to the phase difference of end and coupled end.
Embodiment
Composition graphs 1, Fig. 2, Fig. 3 and Fig. 4, L-band of the present invention can orthogonal merit filter-divider, in fact that the power splitter of a L-band built-in resistor is connected with the input of the coupler of two L-bands respectively at two output port, then the level Four resonance filter of L-band is connected at the straight-through end of two couplers and coupled end, the power splitter of L-band built-in resistor comprises surface-pasted 50 ohmage input port P1, first input inductance L in1, first spiral inductance L1, second spiral inductance L2, ground capacity C1, shunt capacitance C2, built-in tantalum resistance R, first outputting inductance Lout1, the output port P2 of the second outputting inductance Lout2 and two surface-pasted 50 ohmages, P3, the coupler of L-band comprises the input port P4 of surface-pasted 50 ohmages, comprises surface-pasted 50 ohmage input port P1, matched line T1, ground floor double-stranded broadside coupled striplines U1, matched line T2, surface-pasted 50 ohmage straight-through port P5, surface-pasted 50 ohmage coupling port P6, matched line T3, the double-stranded broadside coupled striplines U2 of the second layer, matched line T4, isolated port P7, the level Four filter of L-band comprises the input port P8 of surface-pasted 50 ohmages, the level Four resonance level (U3) that second input inductance L in2, strip line realize, Z-type electric capacity Z, the output port P9 of the 3rd outputting inductance Lout3 and surface-pasted 50 ohmages.
Wherein, in L-band built-in resistor power splitter, input inductance L in1 is connected with input port P1, first spiral inductance L1 and the second spiral inductance L2 lays respectively at the two ends of input inductance L in1, first spiral inductance L1 and the second spiral inductance L2 is helical structure from bottom to top, input inductance L in1 is connected with ground capacity (C1) by a joint pin, first spiral inductance L1 is in parallel with the second spiral inductance L2, ground capacity (C1) is positioned at the below of the first spiral inductance L1 and the second spiral inductance L2, absorption resistance R is parallel to the first spiral inductance L1 and the second spiral inductance L2 two ends, electric capacity C2 is in parallel with absorption resistance R, absorption resistance is positioned at immediately below shunt capacitance C2, one end of absorption resistance R is connected with the first outputting inductance Lout1, absorption resistance R the other end be connected with the second outputting inductance Lout2, first outputting inductance Lout1 is connected with surface-pasted 50 ohmage first output port P2, second outputting inductance Lout2 is connected with surface-pasted 50 ohmage second output port P3.
In L-band coupler, matched line T1 one end is connected with input port P4, the other end is connected with one end of the double-stranded broadside coupled striplines U1 of ground floor, the other end of the double-stranded broadside coupled striplines U1 of ground floor is connected with matched line T2, the other end of matched line T2 is connected with straight-through port P5, matched line T3 one end is connected with coupling port P6, the other end is connected with one end of the double-stranded broadside coupled striplines U2 of the second layer, the other end of the double-stranded broadside coupled striplines of the second layer is connected with one end of matched line T4, the other end of matched line T4 is connected with isolated port P7.
In L-band level Four filter, second input inductance L in2 one end is connected with input port P8, the second input inductance L in2 other end is connected with level Four resonance level left side intermediate layer L21, the other end intermediate layer L24 of level Four resonance level is connected with one end of the 3rd outputting inductance Lout3 again, and the other end of the 3rd outputting inductance Lout3 is connected with surface-pasted 50 ohmage second output port P9.Z-type electric capacity Z is positioned at immediately below level Four resonance level U.Wherein, the first order in level Four resonance level is made up of three ply board (L11, L21 and L31), the second level is made up of three ply board (L12, L22 and L32), the third level be made up of three ply board (L13, L23 and L33) and the fourth stage be made up of three ply board (L14, L24 and L34).
Composition graphs 2, Fig. 3 and Fig. 4, the power splitter of L-band built-in resistor comprises output port P2, P3 of surface-pasted 50 ohmage input port P1, the first input inductance L in1, the first spiral inductance L1, the second spiral inductance L2, ground capacity C1, shunt capacitance C2, built-in tantalum resistance R, the first outputting inductance Lout1, the second outputting inductance Lout2 and two surface-pasted 50 ohmage; The coupler of L-band comprises the input port P4 of surface-pasted 50 ohmages, comprises surface-pasted 50 ohmage input port P1, matched line T1, ground floor double-stranded broadside coupled striplines U1, matched line T2, surface-pasted 50 ohmage straight-through port P5, surface-pasted 50 ohmage coupling port P6, matched line T3, the double-stranded broadside coupled striplines U2 of the second layer, matched line T4, isolated port P7; The level Four filter of L-band comprises the input port P4 of surface-pasted 50 ohmages, the level Four resonance level that second input inductance L in2, strip line realize, the output port P5 of Z-type electric capacity Z, the 3rd outputting inductance Lout3, surface-pasted 50 ohmages and ground plate all adopt multilayer LTCC technique to realize.
L-band built-in resistor can orthogonal merit filter-divider, owing to being the realization of employing multilayer LTCC technique, its low-temperature co-burning ceramic material and metallic pattern sinter and form at about 900 DEG C of temperature, so have extreme high reliability and temperature stability, because structure adopts, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and to encapsulate, thus volume is significantly reduced.
In the present invention, the size of L-band built-in resistor power splitter is only 3.2mm × 1.6mm × 0.9mm, volume is little especially, can be as can be seen from Figure 5, frequency range is wherein at 1.25 ~ 1.55GHz, center frequency points is at 1.4GHz, at frequency range standing internal wave higher than 19dB, isolation is better than 16dB (as Fig. 6).The coupler volume of L-band is only 5.06mm*6.33mm*1.48mm, as shown in Figure 7, its frequency range is 1.25 ~ 1.55GHz, centre frequency is 1.4GHz, the degree of coupling is better than 3.3dB, input port standing wave reaches 1.3 higher than 18dB and standing-wave ratio, and isolation is better than 17dB, phase balance 90 ± 2 degree (as Fig. 8); The volume of L-band level Four resonance filter is only 4.2mm*4.8mm*1.5mm, and as shown in Figure 9, its frequency range is at 1.25 ~ 1.55GHz, and centre frequency is 1.4GHz, and both sides differential loss is less than 1.5dB, and standing wave is higher than 20dB.Three is combined, performance as seen from Figure 10, the waveform that the level Four resonance filter that butt coupling device leads directly to end exports overlaps completely, differential loss is at about 7.5dB, in like manner as Figure 11, the waveform that the level Four resonance filter of butt coupling device coupled end exports overlaps completely, and differential loss is at about 7.5dB, standing wave at more than 15dB, as shown in figure 12.As shown in figure 13, the two column signal phase differences that same group of coupler two groups of filters export all differ 90 ± 2 degree.
Below in conjunction with embodiment, further detailed description is done to the present invention:
Embodiment
A kind of L-band can orthogonal merit filter-divider, comprises a L-band power splitter, the L-band filter that two identical L-band couplers are identical with four, two output ports of L-band power splitter connect the input of a L-band coupler respectively separately, straight-through end and the coupled end of each L-band coupler are all connected the input of a L-band filter, isolated port is mated with 50 Ohmic resistance ground connection, and described L-band power splitter comprises surface-pasted 50 ohmage input P1, first input inductance L in1, first spiral inductance L1, second spiral inductance L2, ground capacity C1, shunt capacitance C2, built-in tantalum resistance R, first outputting inductance Lout1, the output port P3 of the output port P2 of 50 ohmages of the second outputting inductance Lout2 first surface attachment and 50 ohmages of second surface attachment, the coupler of L-band comprises the input port P4 of surface-pasted 50 ohmages, matched line T1, the double-stranded broadside coupled striplines U1 of ground floor, matched line T2, surface-pasted 50 ohmage straight-through port P5, surface-pasted 50 ohmage coupling port P6, matched line T3, the double-stranded broadside coupled striplines U2 of the second layer, matched line T4, isolated port P7, the level Four filter of L-band comprises the input port P8 of surface-pasted 50 ohmages, the level Four resonance level U3 that second input inductance L in2, strip line realize, the output port P9 of Z-type electric capacity Z, the 3rd outputting inductance Lout3 and surface-pasted 50 ohmages,
In L-band power splitter, input inductance L in1 is connected with input port P1, first spiral inductance L1 and the second spiral inductance L2 lays respectively at the two ends of input inductance L in1, first spiral inductance L1 and the second spiral inductance L2 is helical structure from bottom to top, input inductance L in1 is connected with ground capacity C1 by a joint pin, first spiral inductance L1 is in parallel with the second spiral inductance L2, ground capacity C1 is positioned at the below of the first spiral inductance L1 and the second spiral inductance L2, absorption resistance R is parallel to the first spiral inductance L1 and the second spiral inductance L2 two ends, electric capacity C2 is in parallel with absorption resistance R, absorption resistance is positioned at immediately below shunt capacitance C2, one end of absorption resistance R is connected with the first outputting inductance Lout1, absorption resistance R the other end be connected with the second outputting inductance Lout2, first outputting inductance Lout1 is connected with surface-pasted 50 ohmage first output port P2, second outputting inductance Lout2 is connected with surface-pasted 50 ohmage second output port P3, in L-band coupler, matched line T1 one end is connected with input port P4, the other end is connected with one end of the double-stranded broadside coupled striplines U1 of ground floor, the other end of the double-stranded broadside coupled striplines U1 of ground floor is connected with matched line T2, the other end of matched line T2 is connected with straight-through port P5, matched line T3 one end is connected with coupling port P6, the other end is connected with one end of the double-stranded broadside coupled striplines U2 of the second layer, the other end of the double-stranded broadside coupled striplines of the second layer is connected with one end of matched line T4, the other end of matched line T4 is connected with isolated port P7, in L-band level Four filter, second input inductance L in2 one end is connected with input port P8, the second input inductance L in2 other end is connected with the first order intermediate layer L21 of level Four resonance level, 4th resonance unit intergrade L24 of level Four resonance level is connected with one end of the 3rd outputting inductance Lout3 again, the other end of the 3rd outputting inductance Lout3 is connected with surface-pasted 50 ohmage second output port P9, Z-type electric capacity Z is positioned at immediately below level Four resonance level, wherein, the first order in level Four resonance level is made up of three ply board, be respectively the first laminate L11, second laminate L21 and third layer plate L31, the second level is made up of three ply board, be respectively the second level first laminate L12, the second level second laminate L22 and second level third layer plate 32, the third level is made up of three ply board, be respectively the third level first laminate L13, the third level second laminate L23 and third level third layer plate L33, the fourth stage is made up of three ply board, be respectively the fourth stage first laminate L14, the fourth stage second laminate L24 and fourth stage third layer plate L34.
In the power splitter of described L-band built-in resistor, the output port of surface-pasted 50 ohmage input port P1, the first input inductance L in1, the first spiral inductance L1, the second spiral inductance L2, ground capacity C1, shunt capacitance C2, built-in tantalum resistance R, the first outputting inductance Lout1, the second outputting inductance Lout2 and two surface-pasted 50 ohmage all adopts multilayer LTCC technique to realize;
Input port P4, the matched line T1 of surface-pasted 50 ohmages in the coupler of L-band, ground floor double-stranded broadside coupled striplines U1, matched line T2, surface-pasted 50 ohmage straight-through port P5, surface-pasted 50 ohmage coupling port P6, matched line T3, the double-stranded broadside coupled striplines U2 of the second layer, matched line T4, isolated port P7 all adopt multilayer LTCC technique to realize;
The input port P8 of surface-pasted 50 ohmages in the level Four filter of L-band, output port P9 and the ground plate of the level Four resonance level (U) that the second input inductance L in2, strip line realize, Z-type electric capacity Z, the 3rd outputting inductance Lout3, surface-pasted 50 ohmages all adopt multilayer LTCC technique to realize.
Described L-band power splitter first output port P2 is connected with the input port P4 of the first L-band coupler, L-band power splitter second output port P3 is connected with the input port of the second L-band coupler, straight-through port P5 and the coupling port P6 of the first L-band coupler are connected the input of a L-band filter respectively separately, and straight-through port and the coupling port of the second L-band coupler are also connected the input of a L-band filter respectively separately.
Due to the present invention adopt that low-loss low-temperature co-burning ceramic material, 3 D stereo are integrated, the built-in resistance of power splitter two output and L-band built-in resistor power splitter and two L-band level Four resonance filters are combined, therefore, easy to use, without the need to can directly use in the external load of power splitter.
Claims (3)
1. the outer load of a L-band can orthogonal merit filter-divider group, it is characterized in that, comprise a L-band power splitter, L-band filter that two identical L-band couplers are identical with four, two output ports of L-band power splitter connect the input of a L-band coupler respectively separately, straight-through end and the coupled end of each L-band coupler are all connected the input of a L-band filter, and isolated port is mated with 50 Ohmic resistance ground connection;
Described L-band power splitter comprises surface-pasted 50 ohmage inputs (P1), first input inductance (Lin1), first spiral inductance (L1), second spiral inductance (L2), ground capacity (C1), shunt capacitance (C2), built-in tantalum resistance (R), first outputting inductance (Lout1), the output port (P3) of the output port (P2) of 50 ohmages of the second outputting inductance (Lout2) first surface attachment and 50 ohmages of second surface attachment, the coupler of L-band comprises the input port (P4) of surface-pasted 50 ohmages, matched line (T1), the double-stranded broadside coupled striplines of ground floor (U1), matched line (T2), surface-pasted 50 ohmage straight-through ports (P5), surface-pasted 50 ohmage coupling port (P6), matched line (T3), the double-stranded broadside coupled striplines of the second layer (U2), matched line (T4), isolated port (P7), the level Four filter of L-band comprises the input port (P8) of surface-pasted 50 ohmages, the level Four resonance level (U3) that second input inductance (Lin2), strip line realize, the output port (P9) of Z-type electric capacity (Z), the 3rd outputting inductance (Lout3) and surface-pasted 50 ohmages,
In L-band power splitter, input inductance (Lin1) is connected with input port (P1), first spiral inductance (L1) and the second spiral inductance (L2) lay respectively at the two ends of input inductance (Lin1), first spiral inductance (L1) and the second spiral inductance (L2) are all helical structures from bottom to top, input inductance (Lin1) is connected with ground capacity (C1) by a joint pin, first spiral inductance (L1) is in parallel with the second spiral inductance (L2), ground capacity (C1) is positioned at the below of the first spiral inductance (L1) and the second spiral inductance (L2), absorption resistance (R) is parallel to the first spiral inductance (L1) and the second spiral inductance (L2) two ends, electric capacity (C2) is in parallel with absorption resistance (R), absorption resistance is positioned at immediately below shunt capacitance (C2), one end of absorption resistance (R) is connected with the first outputting inductance (Lout1), absorption resistance (R) the other end be connected with the second outputting inductance (Lout2), first outputting inductance (Lout1) is connected with surface-pasted 50 ohmage first output ports (P2), second outputting inductance (Lout2) is connected with surface-pasted 50 ohmage second output ports (P3),
In L-band coupler, matched line (T1) one end is connected with input port (P4), the other end is connected with one end of the double-stranded broadside coupled striplines of ground floor (U1), the other end of the double-stranded broadside coupled striplines of ground floor (U1) is connected with matched line (T2), the other end of matched line (T2) is connected with straight-through port (P5), matched line (T3) one end is connected with coupling port (P6), the other end is connected with one end of the double-stranded broadside coupled striplines of the second layer (U2), the other end of the double-stranded broadside coupled striplines of the second layer is connected with one end of matched line (T4), the other end of matched line (T4) is connected with isolated port (P7),
In L-band level Four filter, second input inductance (Lin2) one end is connected with input port (P8), second input inductance (Lin2) other end is connected with the first order intermediate layer (L21) of level Four resonance level, 4th resonance unit intergrade (L24) of level Four resonance level is connected with one end of the 3rd outputting inductance (Lout3) again, the other end of the 3rd outputting inductance (Lout3) is connected with surface-pasted 50 ohmage second output ports (P9), Z-type electric capacity (Z) is positioned at immediately below level Four resonance level, wherein, the first order in level Four resonance level is made up of three ply board, be respectively the first laminate (L11), second laminate (L21) and third layer plate (L31), the second level is made up of three ply board, be respectively the second level first laminate (L12), the second level second laminate (L22 and second level third layer plate (32), the third level is made up of three ply board, be respectively the third level first laminate (L13), the third level second laminate (L23) and third level third layer plate (L33), the fourth stage is made up of three ply board, be respectively the fourth stage first laminate (L14), the fourth stage second laminate (L24) and fourth stage third layer plate (L34).
2. the outer load of L-band according to claim 1 can orthogonal merit filter-divider group, it is characterized in that: surface-pasted 50 ohmage input ports (P1) in the power splitter of L-band built-in resistor, first input inductance (Lin1), first spiral inductance (L1), second spiral inductance (L2), ground capacity (C1), shunt capacitance (C2), built-in tantalum resistance (R), first outputting inductance (Lout1), the output port of the second outputting inductance (Lout2) and two surface-pasted 50 ohmages all adopts multilayer LTCC technique to realize,
Input port (P4), the matched line (T1) of surface-pasted 50 ohmages in the coupler of L-band, the double-stranded broadside coupled striplines of ground floor (U1), matched line (T2), surface-pasted 50 ohmage straight-through ports (P5), surface-pasted 50 ohmage coupling port (P6), matched line (T3), the double-stranded broadside coupled striplines of the second layer (U2), matched line (T4), isolated port (P7) all adopt multilayer LTCC technique to realize;
The input port (P8) of surface-pasted 50 ohmages in the level Four filter of L-band, output port (P9) and the ground plate of the level Four resonance level (U) that the second input inductance (Lin2), strip line realize, Z-type electric capacity (Z), the 3rd outputting inductance (Lout3), surface-pasted 50 ohmages all adopt multilayer LTCC technique to realize.
3. the outer load of L-band according to claim 1 can orthogonal merit filter-divider group, it is characterized in that, L-band power splitter first output port (P2) is connected with the input port (P4) of the first L-band coupler, L-band power splitter second output port (P3) is connected with the input port of the second L-band coupler, straight-through port (P5) and the coupling port (P6) of the first L-band coupler are connected the input of a L-band filter respectively separately, straight-through port and the coupling port of the second L-band coupler are also connected the input of a L-band filter respectively separately.
Priority Applications (1)
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| CN104201446A (en) * | 2014-09-01 | 2014-12-10 | 南京理工大学 | Microwave millimeter-wave external-load multi-orthogonal inverse filter |
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| CN104409805A (en) * | 2014-09-13 | 2015-03-11 | 南京理工大学 | Miniature double microwave and millimeter-wave I/Q orthogonal filter |
| CN104409802A (en) * | 2014-09-13 | 2015-03-11 | 南京理工大学 | Miniature microwave and millimeter wave self-load I/Q (In-phase/Quadrature) filter |
| CN105048046A (en) * | 2015-06-29 | 2015-11-11 | 南京理工大学 | L-wave band built-in resistor multiphase power dividing filter set |
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| CN104201446A (en) * | 2014-09-01 | 2014-12-10 | 南京理工大学 | Microwave millimeter-wave external-load multi-orthogonal inverse filter |
| CN104377406A (en) * | 2014-09-01 | 2015-02-25 | 南京理工大学 | Microwave millimeter wave self-loading multi-orthogonal filter capable of inverting phase |
| CN104269590A (en) * | 2014-09-12 | 2015-01-07 | 南京理工大学 | Novel miniature three-dimensional second-order dual-mode high-performance band-pass filter |
| CN104409805A (en) * | 2014-09-13 | 2015-03-11 | 南京理工大学 | Miniature double microwave and millimeter-wave I/Q orthogonal filter |
| CN104409802A (en) * | 2014-09-13 | 2015-03-11 | 南京理工大学 | Miniature microwave and millimeter wave self-load I/Q (In-phase/Quadrature) filter |
| CN105048046A (en) * | 2015-06-29 | 2015-11-11 | 南京理工大学 | L-wave band built-in resistor multiphase power dividing filter set |
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Application publication date: 20150930 |