CN104934449B - Display base plate and preparation method thereof and display device - Google Patents
Display base plate and preparation method thereof and display device Download PDFInfo
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- CN104934449B CN104934449B CN201510420098.0A CN201510420098A CN104934449B CN 104934449 B CN104934449 B CN 104934449B CN 201510420098 A CN201510420098 A CN 201510420098A CN 104934449 B CN104934449 B CN 104934449B
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Abstract
The present invention relates to a kind of display base plate and preparation method thereof and display device, display base plate includes：Thin film transistor (TFT), active layer is provided with the thin film transistor (TFT)；Light shield layer, the active layer is arranged on, for blocking the light of active layer described in directive.Technique according to the invention scheme, by setting light shield layer in active layer, it is possible to prevente effectively from ambient is irradiated to the active layer in thin film transistor (TFT), so as to avoid active layer unstable by thin-film transistor performance caused by extraneous illumination effect.
Description
Technical field
The present invention relates to display technology field, shows in particular to a kind of display base plate, a kind of display device and one kind
Show method for preparing substrate.
Background technology
IGZO is a kind of oxide containing indium, gallium and zinc, and carrier mobility is 20~30 times of non-crystalline silicon, for making
Charge-discharge velocities of the TFT to pixel electrode can be greatly enhanced by making TFT (i.e. thin film transistor (TFT)) active layer, improve pixel
Response speed, faster refresh rate is realized, while response also substantially increases the line scanning rate of pixel faster so that superelevation
Resolution ratio is possibly realized in TFT-LCD.Further, since number of transistors reduces and improved the light transmittance of each pixel,
IGZO displays have higher efficiency horizontal and more efficient.
But in the active layer during thin film transistor (TFT) is made by IGZO, because IGZO is easily by extraneous illumination effect,
As shown in figure 1, can make it that active layer is unstable, cause thin film transistor (TFT) service behaviour in the environment of it ambient light be present unstable
It is fixed.
The content of the invention
The technical problems to be solved by the invention are how to avoid shadow of the active layer in thin film transistor (TFT) by ambient light
Ring.
For this purpose, the present invention proposes a kind of display base plate, including：
Thin film transistor (TFT), active layer is provided with the thin film transistor (TFT)；
Light shield layer, the active layer is arranged on, for blocking the light of active layer described in directive.
Preferably, in addition to：
First passivation layer, it is arranged on the active layer；
Resin bed, it is arranged on first passivation layer；
Pixel electrode, it is arranged on the resin bed, material is metal oxide,
Wherein, the light shield layer is located at same layer with the pixel electrode, by the metal oxide in the pixel electrode
Reduction is formed.
Preferably, in addition to：
First passivation layer, it is arranged on the active layer；
Resin bed, it is arranged on first passivation layer；
Public electrode, it is arranged on the resin bed, material is metal oxide,
Wherein, the light shield layer is located at same layer with the public electrode, by the metal oxide in the public electrode
Reduction is formed.
Preferably, in addition to：
First passivation layer, it is arranged on the active layer；
Resin bed, it is arranged on first passivation layer；
Public electrode, it is arranged on the resin bed, material is metal oxide；
Second passivation layer, it is arranged on the public electrode；
Pixel electrode, it is arranged on second passivation layer,
Wherein, the light shield layer includes：
First light shield layer, it is located at same layer with the public electrode, is reduced by the metal oxide in the public electrode
Formed,
Second light shield layer, it is located at same layer with the pixel electrode, is reduced by the metal oxide in the pixel electrode
Formed.
Preferably, the thin film transistor (TFT) also includes：
Source electrode and drain electrode, the active layer is arranged on,
Wherein, the subregion of the active layer is blocked in the source electrode and drain electrode respectively, then the area of the light shield layer is big
In the active layer not by the source electrode and the area of drain electrode occlusion area.
Preferably, the metal oxide is ITO, and the material of the light shield layer is indium metal.
The invention also provides a kind of display device, including the display base plate described in any of the above-described.
The invention also provides a kind of display base plate preparation method, including：
The active layer formed in thin film transistor (TFT)；
Light shield layer is formed in active layer, to block the light of active layer described in directive.
Preferably, in addition to：
The first passivation layer is formed in the active layer；
Resin bed is formed on first passivation layer；
The pixel electrode that material is metal oxide is formed on the resin bed,
Then forming the light shield layer includes：
Reduction treatment is carried out to the first area of the pixel electrode, to be used as the light shield layer.
Preferably, forming the light shield layer includes：
Form intermediate tone mask on the first area of the pixel electrode, other regions of the pixel electrode it
It is upper to form panchromatic tune mask；
Layer where the pixel electrode is etched, to obtain the pattern of the pixel electrode；
Cineration technics is carried out to the pattern of the pixel electrode, to remove half on the first area of the pixel electrode
Tone mask；
Plasma reduction processing is carried out to the first area of the pixel electrode, to be used as the light shield layer.
Preferably, in addition to：
The first passivation layer is formed in the active layer；
Resin bed is formed on first passivation layer；
The public electrode that material is metal oxide is formed on the resin bed,
Then forming the light shield layer includes：
Reduction treatment is carried out to the second area of the public electrode, to be used as the light shield layer.
Preferably, forming the light shield layer includes：
Form intermediate tone mask on the second area of the public electrode, other regions of the public electrode it
It is upper to form panchromatic tune mask；
Layer where the public electrode is etched, to obtain the pattern of the public electrode；
Cineration technics is carried out to the pattern of the public electrode, to remove half on the second area of the public electrode
Tone mask；
Plasma reduction processing is carried out to the second area of the public electrode, to be used as the light shield layer.
Preferably, in addition to：
The first passivation layer is formed in the active layer；
Resin bed is formed on first passivation layer；
The public electrode that material is metal oxide is formed on the resin bed；
The second passivation layer is formed on the public electrode；
The pixel electrode that material is metal oxide is formed on second passivation layer,
Then forming the light shield layer includes：The first light shield layer and the second light shield layer are formed,
Wherein, forming first light shield layer includes：
Reduction treatment is carried out to the second area of the public electrode, using as first light shield layer,
Forming second light shield layer includes：
Reduction treatment is carried out to the first area of the pixel electrode, to be used as second light shield layer.
Preferably, forming first light shield layer includes：
Form intermediate tone mask on the second area of the public electrode, other regions of the public electrode it
It is upper to form panchromatic tune mask；
Layer where the public electrode is etched, to obtain the pattern of the public electrode；
Cineration technics is carried out to the pattern of the public electrode, to remove half on the second area of the public electrode
Tone mask；
Plasma reduction processing is carried out to the second area of the public electrode, using as first light shield layer,
Forming second light shield layer includes：
Form intermediate tone mask on the first area of the pixel electrode, other regions of the pixel electrode it
It is upper to form panchromatic tune mask；
Layer where the pixel electrode is etched, to obtain the pattern of the pixel electrode；
Cineration technics is carried out to the pattern of the pixel electrode, to remove half on the first area of the pixel electrode
Tone mask；
Plasma reduction processing is carried out to the first area of the pixel electrode, to be used as second light shield layer.
Preferably, 800sccm SiH is more than by flow4Carry out reduction treatment.
According to above-mentioned technical proposal, by setting light shield layer in active layer, it is possible to prevente effectively from ambient irradiates
Active layer into thin film transistor (TFT), so as to avoid active layer unstable by thin-film transistor performance caused by extraneous illumination effect
It is fixed.
Brief description of the drawings
The features and advantages of the present invention can be more clearly understood by reference to accompanying drawing, accompanying drawing is schematically without that should manage
Solve to carry out any restrictions to the present invention, in the accompanying drawings：
Fig. 1 shows the structural representation of thin film transistor (TFT) in the prior art；
Fig. 2 shows the structural representation of display base plate according to an embodiment of the invention；
Fig. 3 shows the structural representation of the display base plate according to another embodiment of the invention；
Fig. 4 shows the structural representation of the display base plate according to another embodiment of the invention；
Fig. 5 shows the schematic flow diagram of formation light shield layer according to an embodiment of the invention；
Fig. 6 shows the schematic flow diagram of the formation light shield layer according to another embodiment of the invention；
Fig. 7 shows the schematic flow diagram of the formation light shield layer according to another embodiment of the invention；
Fig. 8 to Figure 12 shows the specific schematic flow diagram of the formation light shield layer according to another embodiment of the invention.
Drawing reference numeral explanation：
1- active layers；2- light shield layers；The light shield layers of 21- first；The light shield layers of 22- second；The passivation layers of 3- first；4- resin beds；
5- pixel electrodes；6- public electrodes；The passivation layers of 7- second；8- source electrodes；9- drains；11- intermediate tone masks；The panchromatic tune masks of 12-.
Embodiment
It is below in conjunction with the accompanying drawings and specific real in order to be more clearly understood that the above objects, features and advantages of the present invention
Mode is applied the present invention is further described in detail.It should be noted that in the case where not conflicting, the implementation of the application
Feature in example and embodiment can be mutually combined.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still, the present invention may be used also
To be different from other modes described here using other to implement, therefore, protection scope of the present invention is not by described below
Specific embodiment limitation.
As shown in Fig. 2 display base plate according to an embodiment of the invention, including：
Thin film transistor (TFT), active layer 1 is provided with thin film transistor (TFT), wherein, the material of active layer 1 can be IGZO；
Light shield layer 2, it is arranged on active layer 1, for blocking the light of directive active layer 1.
By setting light shield layer 2 on active layer 1, it is possible to prevente effectively from ambient is irradiated in thin film transistor (TFT)
Active layer 1, so as to avoid active layer 1 unstable by thin-film transistor performance caused by extraneous illumination effect.
Wherein light shield layer 2 can be arranged on active layer 1 in contact, can also be arranged on active layer in a non-contact manner
On 1, concrete structure can be arranged as required to.
Preferably, in addition to：
First passivation layer 3, is arranged on active layer 1；
Resin bed 4, it is arranged on the first passivation layer 3；
Pixel electrode 5, it is arranged on resin bed 4, material is metal oxide,
Wherein, light shield layer 2 is reduced by the metal oxide in pixel electrode 5 and formed with pixel electrode position 5 in same layer.
Such as the material of pixel electrode 5 is ITO, then can obtain indium metal (i.e. by carrying out reduction reaction to ITO
In), because indium metal is lighttight, therefore the light of directive active layer 1 can effectively be blocked.
Wherein light shield layer 2 directly generates from pixel electrode 5, without independently forming Rotating fields to form light shield layer 2, simplifies
The technique for making light shield layer 2.Wherein resin bed 4 can provide planarization conditions for pixel electrode.
As shown in Figure 3, it is preferable that also include：
First passivation layer 3, is arranged on active layer 1；
Resin bed 4, it is arranged on the first passivation layer 3；
Public electrode 6, it is arranged on resin bed 4, material is metal oxide,
Wherein, light shield layer is located at same layer with public electrode 6, is reduced and is formed by the metal oxide in public electrode 6.
Such as the material of public electrode 6 is ITO, then can obtain indium metal (i.e. by carrying out reduction reaction to ITO
In), because indium metal is lighttight, therefore the light of directive active layer 1 can effectively be blocked.
And light shield layer directly generates from public electrode 6, without independently forming Rotating fields to form light shield layer 2, simplify
The technique for making light shield layer 2.
As shown in Figure 4, it is preferable that also include：
First passivation layer 3, is arranged on active layer 1；
Resin bed 4, it is arranged on the first passivation layer 3；
Public electrode 6, it is arranged on resin bed 4, material is metal oxide；
Second passivation layer 7, is arranged on public electrode 6；
Pixel electrode 5, it is arranged on the second passivation layer 7,
Wherein, light shield layer 2 includes：
First light shield layer 21, it is located at same layer with public electrode 6, is reduced and formed by the metal oxide in public electrode 6,
Second light shield layer 22, it is located at same layer with pixel electrode 5, is reduced and formed by the metal oxide in pixel electrode 5.
Light shield layer 2 in the present embodiment includes two layers of light-shielding structure, relative to one layer of light-shielding structure, can more effectively hide
Keep off the light of directive active layer 1.And the width of two layers of light shield layer can be adjusted as needed, the width of two layers of light shield layer is set
It is set to identical or different.
And the first light shield layer 21 is directly reduced by the metal oxide in public electrode 6 to be formed, and the second light shield layer 22 is straight
Connect to be reduced by the metal oxide in pixel electrode 5 and formed, volume is formed without micro- light shield layer 22 of first light shield layer 21 or second again
Outer layer, simplify the technique for making light shield layer.
Display base plate in the present embodiment can be the display base plate of ADS or IPS patterns, wherein public electrode 6 and pixel
Electrode 5 is all disposed within array base palte.
Preferably, thin film transistor (TFT) also includes：
Source electrode 8 and drain electrode 9, are arranged on active layer 1,
Wherein, the subregion of active layer 1 is blocked in source electrode 8 and drain electrode 9 respectively, then the area of light shield layer 2 is more than active layer 1
Not by the area of 9 occlusion areas of source electrode 8 and drain electrode.So as to ensure that light shield layer 2 can well block the light of directive active layer 1.
Preferably, metal oxide ITO, the material of light shield layer is indium metal.
The invention also provides the display base plate of a kind of display device, including any of the above-described.
It should be noted that the display device in the present embodiment can be：Electronic Paper, mobile phone, tablet personal computer, television set,
Any product or part with display function such as notebook computer, DPF, navigator.
As shown in figure 5, display base plate preparation method according to an embodiment of the invention, including：
The active layer 1 formed in thin film transistor (TFT)；
Light shield layer 2 is formed on active layer 1, to block the light of directive active layer 1.
Preferably, in addition to：
The first passivation layer 3 is formed on active layer 1；
Resin bed 4 is formed on the first passivation layer 3；
The pixel electrode 5 that material is metal oxide is formed on resin bed 4,
Then forming light shield layer 2 includes：
Reduction treatment is carried out to the first area of pixel electrode 5, to be used as light shield layer 2.
As shown in Figure 5, it is preferable that forming light shield layer 2 includes：
A1, intermediate tone mask is formed on the first area of pixel electrode 5, on other regions of pixel electrode 5
Form panchromatic tune mask；
A2, the place layer of pixel electrode 5 is etched, to obtain the pattern of pixel electrode 5；
A3, cineration technics is carried out to the pattern of pixel electrode 5, to remove half color on the first area of pixel electrode 5
Adjust mask；
A4, plasma reduction processing is carried out to the first area of pixel electrode 5, to be used as light shield layer 2.
Preferably, in addition to：
The first passivation layer 3 is formed on active layer 1；
Resin bed 4 is formed on the first passivation layer 3；
The public electrode 6 that material is metal oxide is formed on resin bed 4,
Then forming light shield layer 2 includes：
Reduction treatment is carried out to the second area of public electrode 6, to be used as light shield layer 2.
As shown in Figure 6, it is preferable that forming light shield layer includes：
B1, on the second area of public electrode 6 formed intermediate tone mask 11, other regions of public electrode 6 it
It is upper to form panchromatic tune mask 12, as shown in Figure 8；
B2, the place layer of public electrode 6 is etched, to obtain the pattern of public electrode 6, as shown in Figure 9；
B3, cineration technics is carried out to the pattern of public electrode 6, to remove half color on the second area of public electrode 6
Mask 11 is adjusted, as shown in Figure 10；
B4, plasma reduction processing is carried out to the second area of public electrode 6, using as light shield layer 2, as shown in figure 11,
Certainly, also need to remove the panchromatic tune mask 12 on other regions of public electrode 6 after light shield layer 2 is formed, as shown in figure 12.
Preferably, in addition to：
The first passivation layer 3 is formed on active layer 1；
Resin bed 4 is formed on the first passivation layer 3；
The public electrode 6 that material is metal oxide is formed on resin bed 4；
The second passivation layer 7 is formed on public electrode 6；
The pixel electrode 5 that material is metal oxide is formed on the second passivation layer 7,
Then forming light shield layer 2 includes：The first light shield layer 21 and the second light shield layer 22 are formed,
Wherein, forming the first light shield layer 21 includes：
Reduction treatment is carried out to the second area of public electrode 6, using as the first light shield layer 21,
Forming the second light shield layer includes：
Reduction treatment is carried out to the first area of pixel electrode 5, to be used as the second light shield layer 22.
As shown in Figure 8, it is preferable that forming the first light shield layer 21 includes：
C1, intermediate tone mask is formed on the second area of public electrode 6, on other regions of public electrode 6
Form panchromatic tune mask；
C2, the place layer of public electrode 6 is etched, to obtain the pattern of public electrode；
C3, cineration technics is carried out to the pattern of public electrode 6, to remove half color on the second area of public electrode 6
Adjust mask；
C4, plasma reduction processing is carried out to the second area of public electrode 6, using as the first light shield layer 21,
Forming the second light shield layer 22 includes：
C5, intermediate tone mask is formed on the first area of pixel electrode 5, on other regions of pixel electrode 5
Form panchromatic tune mask；
C6, the place layer of pixel electrode 5 is etched, to obtain the pattern of pixel electrode 5；
C7, cineration technics is carried out to the pattern of pixel electrode 5, to remove half color on the first area of pixel electrode 5
Adjust mask；
C8, plasma reduction processing is carried out to the first area of pixel electrode 5, to be used as the second light shield layer 22.
Above-mentioned plasma treatment includes passing through SiH4(i.e. silane) is carried out to the surface of pixel electrode 5 and/or public electrode 6
Plasma treatment, due to ITO and SiH4Reaction, which can be formed, condenses blocking indium metal, and the transmitance of indium metal is very low, can
To block the light of directive active layer 1.And plasma treatment can ensure only to form layer of metal indium film, without being formed
Blocked up metal level, ensure that display base plate thickness is relatively low.
Preferably, 800sccm SiH is more than by flow4Carry out reduction treatment.
Flow is more than 800sccm SiH4The indium metal that can ensure to restore from ITO condenses into the structure of densification, no
Easy printing opacity, to ensure to block the light of directive active layer 1 completely.
Wherein, formation process for example may include used by above-mentioned flow：The structures such as film-forming process and etching such as deposition, sputtering
Figure technique.
Technical scheme is described in detail above in association with accompanying drawing, it is contemplated that in the prior art, thin film transistor (TFT)
Active layer is easily caused thin-film transistor performance bad by extraneous illumination effect.Technique according to the invention scheme, passes through
Light shield layer is set in active layer, it is possible to prevente effectively from ambient is irradiated to the active layer in thin film transistor (TFT), so as to keep away
It is unstable by thin-film transistor performance caused by extraneous illumination effect to exempt from active layer.
It is pointed out that in the accompanying drawings, for the clear size that may be exaggerated layer and region of diagram.And can be with
Understand, when element or layer be referred to as another element or layer " on " when, it can be directly in other elements, or there may be
Middle layer.Additionally, it is appreciated that when element or layer be referred to as another element or layer " under " when, it can be directly at other
Under element, or there may be the layer or element of more than one centre.In addition, it is to be appreciated that when layer or element are referred to as
Two layers or two elements " between " when, layer that it can be only between two layers or two elements, or can also have one
Intermediate layer above or element.Similar reference marker indicates similar element in the whole text.
In the present invention, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint are relative
Importance.Term " multiple " refers to two or more, is limited unless otherwise clear and definite.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (13)
- A kind of 1. display base plate, it is characterised in that including：Thin film transistor (TFT), active layer is provided with the thin film transistor (TFT)；Light shield layer, the active layer is arranged on, for blocking the light of active layer described in directive；First passivation layer, it is arranged on the active layer；Resin bed, it is arranged on first passivation layer；Pixel electrode, it is arranged on the resin bed, material is metal oxide,Wherein, the light shield layer is located at same layer with the pixel electrode, is reduced by the metal oxide in the pixel electrode Formed.
- 2. display base plate according to claim 1, it is characterised in that also include：First passivation layer, it is arranged on the active layer；Resin bed, it is arranged on first passivation layer；Public electrode, it is arranged on the resin bed, material is metal oxide,Wherein, the light shield layer is located at same layer with the public electrode, is reduced by the metal oxide in the public electrode Formed.
- 3. display base plate according to claim 1, it is characterised in that also include：First passivation layer, it is arranged on the active layer；Resin bed, it is arranged on first passivation layer；Public electrode, it is arranged on the resin bed, material is metal oxide；Second passivation layer, it is arranged on the public electrode；Pixel electrode, it is arranged on second passivation layer,Wherein, the light shield layer includes：First light shield layer, it is located at same layer with the public electrode, is reduced and formed by the metal oxide in the public electrode,Second light shield layer, it is located at same layer with the pixel electrode, is reduced and formed by the metal oxide in the pixel electrode.
- 4. display base plate according to any one of claim 1 to 3, it is characterised in that the thin film transistor (TFT) also includes：Source electrode and drain electrode, the active layer is arranged on,Wherein, the subregion of the active layer is blocked in the source electrode and drain electrode respectively, then the area of the light shield layer is more than institute Active layer is stated not by the source electrode and the area of drain electrode occlusion area.
- 5. display base plate according to any one of claim 1 to 3, it is characterised in that the metal oxide is ITO, The material of the light shield layer is indium metal.
- 6. a kind of display device, it is characterised in that including the display base plate any one of claim 1 to 5.
- A kind of 7. display base plate preparation method, it is characterised in that including：The active layer formed in thin film transistor (TFT)；Light shield layer is formed in active layer, to block the light of active layer described in directive；The first passivation layer is formed in the active layer；Resin bed is formed on first passivation layer；The pixel electrode that material is metal oxide is formed on the resin bed,Then forming the light shield layer includes：Reduction treatment is carried out to the first area of the pixel electrode, to be used as the light shield layer.
- 8. display base plate preparation method according to claim 7, it is characterised in that forming the light shield layer includes：Intermediate tone mask is formed on the first area of the pixel electrode, the shape on other regions of the pixel electrode Help tone mask；The pixel electrode is etched, to obtain the pattern of the pixel electrode；Cineration technics is carried out to the pattern of the pixel electrode, to remove the halftoning on the first area of the pixel electrode Mask；Plasma reduction processing is carried out to the first area of the pixel electrode, to be used as the light shield layer.
- 9. display base plate preparation method according to claim 7, it is characterised in that also include：The first passivation layer is formed in the active layer；Resin bed is formed on first passivation layer；The public electrode that material is metal oxide is formed on the resin bed,Then forming the light shield layer includes：Reduction treatment is carried out to the second area of the public electrode, to be used as the light shield layer.
- 10. display base plate preparation method according to claim 9, it is characterised in that forming the light shield layer includes：Intermediate tone mask is formed on the second area of the public electrode, the shape on other regions of the public electrode Help tone mask；The public electrode is etched, to obtain the pattern of the public electrode；Cineration technics is carried out to the pattern of the public electrode, to remove the halftoning on the second area of the public electrode Mask；Plasma reduction processing is carried out to the second area of the public electrode, to be used as the light shield layer.
- 11. display base plate preparation method according to claim 7, it is characterised in that also include：The first passivation layer is formed in the active layer；Resin bed is formed on first passivation layer；The public electrode that material is metal oxide is formed on the resin bed；The second passivation layer is formed on the public electrode；The pixel electrode that material is metal oxide is formed on second passivation layer,Then forming the light shield layer includes：The first light shield layer and the second light shield layer are formed,Wherein, forming first light shield layer includes：Reduction treatment is carried out to the second area of the public electrode, using as first light shield layer,Forming second light shield layer includes：Reduction treatment is carried out to the first area of the pixel electrode, to be used as second light shield layer.
- 12. display base plate preparation method according to claim 11, it is characterised in that form the first light shield layer bag Include：Intermediate tone mask is formed on the second area of the public electrode, the shape on other regions of the public electrode Help tone mask；The public electrode is etched, to obtain the pattern of the public electrode；Cineration technics is carried out to the pattern of the public electrode, to remove the halftoning on the second area of the public electrode Mask；Plasma reduction processing is carried out to the second area of the public electrode, using as first light shield layer,Forming second light shield layer includes：Intermediate tone mask is formed on the first area of the pixel electrode, the shape on other regions of the pixel electrode Help tone mask；The pixel electrode is etched, to obtain the pattern of the pixel electrode；Cineration technics is carried out to the pattern of the pixel electrode, to remove the halftoning on the first area of the pixel electrode Mask；Plasma reduction processing is carried out to the first area of the pixel electrode, to be used as second light shield layer.
- 13. the display base plate preparation method according to any one of claim 7 to 12, it is characterised in that big by flow In 800sccm SiH4Carry out reduction treatment.
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| CN114137771B (en) * | 2021-12-08 | 2023-08-01 | Tcl华星光电技术有限公司 | Array substrate and manufacturing method thereof |
| WO2024065358A1 (en) * | 2022-09-29 | 2024-04-04 | 京东方科技集团股份有限公司 | Array substrate, and display panel comprising same and preparation method therefor |
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| CN102681276A (en) * | 2012-02-28 | 2012-09-19 | 京东方科技集团股份有限公司 | Array substrate, method for manufacturing same and display device comprising same |
| CN103985717A (en) * | 2014-05-13 | 2014-08-13 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method of array substrate, and display device |
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| CN202512549U (en) * | 2012-03-23 | 2012-10-31 | 京东方科技集团股份有限公司 | Touch liquid crystal display device, liquid crystal display panel and upper part substrate |
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| CN1417622A (en) * | 2001-10-29 | 2003-05-14 | Lg.菲利浦Lcd株式会社 | Transmitting/reflecting LCD and its making process |
| CN102681276A (en) * | 2012-02-28 | 2012-09-19 | 京东方科技集团股份有限公司 | Array substrate, method for manufacturing same and display device comprising same |
| CN103985717A (en) * | 2014-05-13 | 2014-08-13 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method of array substrate, and display device |
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| US12038660B2 (en) | 2021-12-08 | 2024-07-16 | Tcl China Star Optoelectronics Technology Co., Ltd. | Array substrate and manufacturing method thereof |
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| CN104934449A (en) | 2015-09-23 |
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