CN104919602A - 用于太阳能模块的镀覆电接触件 - Google Patents
用于太阳能模块的镀覆电接触件 Download PDFInfo
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- CN104919602A CN104919602A CN201380070762.2A CN201380070762A CN104919602A CN 104919602 A CN104919602 A CN 104919602A CN 201380070762 A CN201380070762 A CN 201380070762A CN 104919602 A CN104919602 A CN 104919602A
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- solar cell
- silicon solar
- copper
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Abstract
本发明涉及一种用于制造太阳能模块上的电接触件的镀覆方法,其中通过电镀将太阳能模块中的硅太阳能电池之间的布线沉积到导电种子上。各个单独的硅太阳能电池之间的布线包括布线加固柱,其改进了所述布线的可靠性。
Description
技术领域
本发明涉及一种用于制造包括硅太阳能电池的阵列的太阳能模块的各个单独的硅太阳能电池之间的电接触件的镀覆方法。
背景技术
太阳能模块是用于把阳光转换成电能的器件,并且包括单独的太阳能电池的一维阵列或二维阵列,例如1x10、6x12或8x12太阳能电池的阵列。太阳能模块的总体尺寸例如是0.8x1.6m或者1x1.6m。
基于硅的太阳能电池包括硅单晶电池(“太阳能硅晶片”)、多晶硅电池和无定形硅电池。
这样的太阳能电池(2)被安放到支持基板(5)上,基板例如是玻璃板(6)与密封剂(7)的夹层,所述密封剂(7)比如是在太阳能模块(1)的使用期间朝向阳光的乙烯/醋酸乙烯酯共聚物(EVA)的箔片或者硅酮薄板。各个单独的太阳能电池(2)之间存在水平间隔(3)。通过在太阳能电池(2)上以及其间附着电线、夹箝(clamp)或其组合(4)使得各个单独的太阳能电池的相应的P型和N型扩散区段发生电接触(图1)。
已经知道用于使太阳能电池彼此电接触的不同策略:将已经在一侧或全部两侧附着有布线部分的太阳能电池(2)安放到支持基板(5)上,并且将电线和/或夹箝(4)焊接或胶粘到太阳能电池(2)上的接触区域(8)上,从而桥接附着到太阳能模块(1)的基板的两个太阳能电池(2)之间的水平间隔(3)。在US 2012/0160294 A1中公开了一种通过夹箝(4)连接太阳能电池的方法。焊接到两个硅电池的接触区域上并且桥接附着到支持基板(5)的所述两个太阳能电池之间的水平间隔(3)的电线和/或夹箝(4)的机械稳定性并不总是足够的。
这例如在图2中示出:在至少两个太阳能电池(2)和(2’)被安放到密封剂(7)上面(图2a)或者被部分地嵌入到密封剂(7)中(图2b)的情况中,会导致与支持基板(5)和密封剂(7)相对的所述至少两个太阳能电池(2)和(2’)的表面之间的高度差(9)。在太阳能电池(2)和(2’)的边缘与密封剂(7)的表面之间的区段中弯曲两个太阳能电池(2)和(2’)之间的布线和/或夹箝(4),以便机械支持所述布线(4)(图2c)。所述弯曲的布线部分(10)的内部应力增大,并且相应地降低了太阳能模块(1)的后来使用中的可靠性,例如其中例如50°C的大温度差会促使在弯曲布线部分(10)中形成裂缝(11)(图2d)。
此外,在太阳能模块(1)的制造或后来使用期间,通过(导电)粘合剂形成的太阳能电池(1)与布线和/或夹箝(4)之间的焊接接点或接点也是太阳能模块(1)的一个故障来源。
文献GB 1 553 025 A1公开了一种用于在各个单独的太阳能电池上制造布线的方法,其中在硅晶片中形成沟槽并且相继地用铝填充。所述铝布线与形成在硅晶片中的沟槽的侧壁直接接触。相应地,这样的方法不适用于在各个单独的硅太阳能电池之间形成铜和/或铜合金布线,这是因为硅和铜扩散到彼此之中,并且从而会以不可接受的方式改动太阳能硅材料的固有属性。
文献WO 2006/093023 A1公开了一种用于从各个单独的硅晶片制造微芯片的双金属镶嵌(dual damascene)镀覆方法。
文献EP 0710991 A1公开了一种用于把一组太阳能电池元件与彼此靠近设置的多个太阳能电池元件的背面上的金属箔构件连接的方法。
发明内容
本发明的目的
本发明的目的是提供一种用于在太阳能模块中的硅太阳能电池之间制造由铜或铜合金制成的电接触件的方法,其中这样的电接触件的机械稳定性和可靠性得到提高。此外,必须避免由铜或铜合金制成的电接触件与硅太阳能电池的侧壁的直接接触。
发明的概括
这一目的是通过一种用于制造太阳能模块上的电接触件的镀覆方法而解决的,所述方法包括依照以下顺序的步骤:
(i)提供安放到支持基板上的硅太阳能电池的阵列,各个硅太阳能电池彼此分开一定水平间隔,并且具有在每一个硅太阳能电池上包括至少一个接触区域的暴露表面;
(ii)将镀覆抗阻剂沉积到所述硅太阳能电池阵列的暴露表面以及硅太阳能电池之间的水平间隔上;
(iii)在镀覆抗阻剂中形成开口,并且从而暴露出每一个硅太阳能电池上的所述至少一个接触区域以及硅太阳能电池之间的水平间隔的至少一部分;
(iv)在镀覆抗阻剂以及步骤(iii)中形成的开口上面形成导电种子层;
(v)在导电种子层上面形成铜或铜合金层;以及
(vi)对铜或铜合金层和导电种子层的那些各个部分进行回蚀,该回蚀足以从镀覆抗阻剂去除铜或铜合金层和导电种子层全部二者,从而留下在步骤(iii)中形成的开口中的铜或铜合金层,并且由此形成硅太阳能电池之间的布线以及电线加固柱(wire reinforcement pillar)。
通过根据本发明的镀覆方法制造的太阳能模块包括硅太阳能电池之间的铜或铜合金布线部分,铜或铜合金布线部分具有布线加固柱并且桥接所述硅太阳能电池之间的水平间隔。所述布线部分为太阳能模块的每一个硅太阳能电池提供电接触件,并且具有足够的机械稳定性和可靠性。不需要焊接接点和/或粘合剂来把太阳能电池之间的布线与每一个太阳能电池上的接触区域连接。根据本发明的方法省略了铜或铜合金布线部分与布线加固柱和硅太阳能电池之间的直接接触。相应地,硅与铜或铜合金之间的不合期望的扩散得到了抑制。
附图说明
图1示出了太阳能模块的顶视图(现有技术),太阳能模块包括硅太阳能电池的二维阵列、硅太阳能电池之间的水平间隔和硅太阳能电池上的导线、以及硅太阳能电池之间的布线。
图2示出了太阳能模块的剖面(现有技术),太阳能模块具有两个硅太阳能电池、所述两个硅太阳能电池之间的水平间隔、以及桥接所述水平间隔的所述两个硅太阳能电池之间的布线。
图3示出了根据本发明的用于制造太阳能模块上的硅太阳能电池上的导线以及硅太阳能电池之间的布线的方法。
图4示出了根据本发明的用于制造太阳能模块上的硅太阳能电池上的导线以及硅太阳能电池之间的布线的方法的另一个可选步骤。
具体实施方式
本发明提供一种用于通过镀覆(优选地是电镀)形成硅太阳能电池之间的图案化铜或铜合金层的方法。所述方法特别适合于在包括至少两个硅太阳能电池的太阳能模块上制作导线。后面更加详细地描述所述方法。
这里示出的附图仅仅是为了对处理进行说明。附图不是按比例绘制的,也就是说他们并不反映太阳能模块的实际规格或特征。相似的附图标记在描述中始终指代相似的元件。
提供包括安放在支持基板(104)上的至少两个硅太阳能电池(102)和(102’)的太阳能模块(101)(图3a)。支持基板(104)可以包括玻璃板或塑料材料(105)以及密封剂(106)。所述密封剂最常见的是由乙烯/醋酸乙烯酯共聚物(EVA)或硅酮材料制成的薄板。
包括柔性硅太阳能电池(102)的太阳能模块(101)的支持基板(104)可以包括例如适当的聚合物材料之类的柔性材料以替代玻璃板(105)。
硅太阳能电池(102)例如是单晶硅太阳能电池(太阳能硅晶片)和多晶硅太阳能电池、薄膜硅太阳能电池(例如无定形硅太阳能电池)或者任何其他柔性太阳能模块设计。
最为优选的是,硅太阳能电池(102)是基于硅的背面接触电池,其中各个单独电池上以及其间的所有布线都附着到硅太阳能电池(102)的背面。
所述至少两个硅太阳能电池(102)和(102’)在与朝向基板(104)的硅太阳能电池侧相对的硅太阳能电池侧上包括至少一个接触区域(107)。
水平间隔(103)将安放在支持基板(104)上的至少两个硅太阳能电池(102)和(102’)分开。水平间隔(103)优选地可以具有处于0.5到25mm范围内的宽度,更优选的是从1到20mm。
在根据本发明的方法中可以使用不同类型的接触区域(107)。接触区域(107)在这里被定义成在后来的处理步骤中在其上经受(一个或多个)铜或铜合金层的沉积的硅太阳能电池(102)表面的一部分。相应地,接触区域(107)提供可镀表面并且抑制硅太阳能电池与通过根据本发明的方法形成的由铜或铜合金制成的电接触件之间的不合期望的相互扩散。
第一种类型的接触区域(107)是单晶太阳能硅晶片和多晶硅太阳能电池的表面或者所述表面的某些部分,其特别由掺杂硅组成。举例来说,通过无电镀覆到高度掺杂的硅表面上可以实现镍合金层(比如镍磷合金层)的沉积。
第二种类型的适当的接触区域(107)是例如铝层之类的薄金属层,其可以通过例如物理气相沉积之类的气相沉积方法或者通过无电镀覆到硅太阳能电池(102)上而被沉积。接触区域(107)还可以是多于一个单独的金属和金属合金层的多层层叠,金属和金属合金层比如是附着到硅太阳能电池(102)上的铝层,随后是例如钨钽合金层或镍(合金)层之类的屏障层,附着在其上的是作为接触区域(107)的最外层的铜层。通过屏障层将包括铜的接触区域(107)与硅太阳能电池(102)的表面分开,以便防止铜与硅区域之间的不合期望的相互扩散。
第三种类型的适当的接触区域(107)是抑制硅太阳能电池(102)与导电种子层(111)和/或铜或铜合金层(112)之间的不合期望的原子扩散的屏障层。这样的屏障层可以通过无电镀覆或者例如物理气相沉积之类的气相沉积方法被沉积到硅太阳能电池(102)上。适合作为屏障层的材料例如有:镍、镍合金(比如镍磷合金、镍硼合金、镍钨磷合金和镍钼磷合金)、钴、钴合金(比如钴钨磷合金和钴钼磷合金)、铬、钛、钽、钨、银、金、钯以及多层所述材料。
第四种类型的适当的接触区域(107)是透明导电氧化物,比如掺铟氧化锡和掺铝氧化锌,其可以通过气相沉积方法或者湿法化学沉积方法来沉积。
接触区域(107)可以完全覆盖硅太阳能电池(102)的表面,或者在硅太阳能电池(102)的表面上形成图案。在图3中示出了硅太阳能电池(102)和(102’)的一侧上的图案化接触区域(107)。
现在参照图3b:将镀覆抗阻剂层(108)沉积到至少两个硅太阳能电池(102)和(102’)、接触区域(107)和密封剂(106)的暴露表面上。
镀覆抗阻剂层(108)可以以液体抗阻剂材料的形式通过例如浸涂、淋涂、喷涂、辊涂或旋涂而被附着。可印刷抗阻剂材料可以例如通过丝网印刷来沉积。可以将干膜抗阻剂材料层压到至少两个硅太阳能电池(102)和(102’)、接触区域(107)和密封剂(106)的表面上。所有这样的抗阻剂沉积方法在本领域内都是已知的。
在使用另一种沉积方法来形成镀覆抗阻剂层(108)的情况下,可以应用其他图案化手段,比如光构建(photo structuring)、等离子腐蚀以及激光消融。所有这些方法在本领域内都是已知的。
在下一步骤中形成镀覆抗阻剂层(108)中的至少两种类型的开口(图3c):
a、在至少两个硅太阳能电池(102)和(102’)之间的水平间隔(103)中形成第一开口(109)以用于布线加固柱(114);以及
b、通过暴露出所述接触区域(107)的至少一部分来形成第二开口(110)以用于至少两个硅太阳能电池(102)和(102’)之间的布线(113)。可以通过激光钻孔从单一镀覆抗阻剂层(108)制造第一开口(109)和第二开口(110)。
还可以通过压纹从单一镀覆抗阻剂层(108)形成第一开口(109)和第二开口(110)。
可以通过丝网印刷、光构建或压纹以及随后至少部分地硬化图案化的第一镀覆抗阻剂层(108a)来在第一镀覆抗阻剂层(108a)中形成第一开口(109)。随后可以通过在被沉积到图案化和至少部分地硬化的第一镀覆抗阻剂层(108a)上的第二镀覆抗阻剂层(108b)中进行丝网印刷、光构建或压纹来形成第二开口(110)。针对所采用的构建方法调节沉积期间镀覆抗阻剂材料的粘度,这是本领域内的常见过程。
用于镀覆抗阻剂层(108)的材料必须承受在步骤(iv)中应用的镀覆操作,这在通过无电镀覆来沉积导电种子层(111)的情况下可以包括利用酸性和碱性液体和/或氧化化学品来进行处理。通过例如化学气相沉积或物理气相沉积之类的其他方法进行的导电种子层(111)的沉积并不需要对于酸性和碱性液体和/或氧化化学品的此类抵抗力。相应地,在通过例如化学气相沉积或物理气相沉积之类的方法来沉积导电种子层(111)的情况下,镀覆抗阻剂层(108)的材料也可以是例如乙烯/醋酸乙烯酯共聚物(EVA)或硅酮材料之类的密封剂材料。
从例如液体抗阻剂、可(丝网)印刷抗阻剂和干膜抗阻剂之类的材料当中选择镀覆抗阻剂层(108)。
用于镀覆抗阻剂层(108)的适当聚合物例如是以下各项当中的一项或更多项:丙烯酸酯、乙烯/丙烯酸乙酯共聚物(EEAC)、乙烯/甲基丙烯酸酯共聚物(EMA)、乙烯/丙烯酸共聚物(EAA)、乙烯/丙烯酸丁酯共聚物(EBA)、聚甲基戊烯(PMP)和聚甲基丙烯酸甲酯(PMMA)。在通过无电镀覆来沉积导电种子层(111)的情况下,这样的材料是特别优选的。
用于镀覆抗阻剂层(108)的更加优选的聚合物材料是从由丙烯酸酯和聚甲基戊烯组成的组当中选择的。
用于镀覆抗阻剂层(108)的最为优选的聚合物材料是其重量平均分子量MW为20000到200000g/mol的丙烯酸酯,更加优选的是从25000到150000g/mol,并且最为优选的是从30000到100000g/mol。根据ISO11357-1测量的所述聚合物的Tg(玻璃温度)优选地处在20到130°C的范围内,更加优选的是从30到120°C,并且最为优选的是从40到110°C。
过高的分子量将导致在所选溶剂中的可溶性降低。如果分子量过低,则对于生产溶液(酸性、碱性、氧化)的敏感性趋向于不足。Tg也不可以过低,因为在这种情况下在处理化学品的升高的温度下对于基板的敏感性不足。
可选的是,可以将填充物合并到镀覆抗阻剂层(108)的聚合材料中。适当的填充物优选地从由以下各项组成的组当中选择:硼酸铝、氧化铝、三水合氧化铝、无烟煤、锑酸钠、五氧化二锑、三氧化锑、磷灰石、绿坡缕石、偏硼酸钡、硫酸钡、硫酸锶、钛酸钡、膨润土、氧化铍、氮化硼、碳酸钙、氢氧化钙、硫酸钙、炭黑、粘土、方英石、硅藻土、白云石、铁酸盐、长石、玻璃珠、石墨、水合硅酸钙、氧化铁、高岭土、锌钡白、氧化镁、云母、二硫化钼、珍珠岩、聚合填充物(例如PTFE、PE、聚酰亚胺)、浮岩、叶蜡石、橡胶颗粒、煅制氧化硅、熔融氧化硅、沉淀氧化硅、海泡石、石英、砂、板岩粉、滑石、二氧化钛、蛭石、木屑、硅灰石、沸石、硼酸锌、氧化锌、锡酸锌、硫化锌、芳纶纤维、碳纤维、纤维素纤维、玻璃纤维及其混合物。
更加优选的是,用于镀覆抗阻剂层(108)的可选的填充物材料是从由以下各项组成的一组当中选择的:熔融氧化硅、煅制氧化硅、沉淀氧化硅、白云石、高岭土、滑石、碳酸钙、云母、长石、蛭石以及浮岩。
最为优选的是,用于镀覆抗阻剂层(108)的可选的填充物材料是从由以下各项组成的一组当中选择的:高岭土、滑石、云母以及长石。
在去除溶剂之后,总体的第一抗阻剂材料配制物中的可选填充物的数量处于1到70wt.-%(重量百分比)的范围内,更加优选的是2到65wt.-%,最为优选的是3到60wt.-%。
取决于配制抗阻剂材料所采用的溶剂,必须调节烤箱温度和干燥时间(抗阻剂材料的硬化)。干燥涂层的最终硬度是重要的。根据Koenig对硬度的度量优选地应当处于20s到200s的范围内,更加优选的是40s到180s,最为优选的是60s到160s。
现在参照图3d:将导电种子层(111)沉积到通过第二开口(110)暴露出的接触区域(107)的至少一部分上,沉积到图案化的镀覆抗阻剂层(108)的外表面上以及沉积到通过第一开口(109)暴露出的密封剂(106)的那些部分上。
需要导电种子层(111)来发起将金属或金属合金层(112)电镀到第一开口(109)、第二开口(110)中,电镀到接触区域(107)的至少一部分上,电镀在图案化的镀覆抗阻剂层(108)以及通过第一开口(109)暴露出的密封剂(106)的那些部分上面。
由于导电种子层(111)覆盖镀覆抗阻剂层(108)的整个表面、第一开口(109)和第二开口(110),因此在铜或铜合金层(112)的电镀期间不会看到局部电位的变化。这种类型的板面镀覆(panel plating)方法不包括将要电镀的隔离特征(例如导线)。布局(例如第一开口(109)和第二开口(110)的位置和尺寸)的变化对于局部电位不再有影响。所镀覆的金属或金属合金厚度分布现在取决于所施加的镀覆抗阻剂层(108)的厚度精度。这允许提高电流密度,因为隔离的布局特征不是限制因素。镀覆速度的提高缩短了沉积铜或铜合金层(112)所需的时间。
在本领域内众所周知的不导电表面的传统制造中,导电种子层(111)例如是通过无电镀覆而形成的。
用于沉积导电种子层(111)的其他适当的方法例如是利用本征导电聚合物的直接镀覆、化学气相沉积(CVD)、物理气相沉积(PVD)以及等离子体增强化学气相沉积(PECVD)。这些方法在本领域内也是已知的。
优选的是,通过无电镀覆来沉积导电种子层(111)。
还可以对图案化的镀覆抗阻剂层(108)的表面进行活化,以用于随后通过各种方法进行电镀,所述各种方法例如在“Printed Circuits Handbook(印刷电路手册)” C. F. Coombs Jr.(编辑),第6版,McGraw Hill,第28.5到28.9和30.1到30.11页中作了描述。这些处理涉及形成包括碳粒子、贵金属胶体、贵金属离子或导电聚合物的导电层。
随后可以可选地实施薄中间金属涂层的无电镀覆,以便增强导电种子层(111)。随后,借助于导电种子层(111),可以实施根据本发明的铜或铜合金层(112)的电镀。
导电种子层(111)可以由单一金属层、单一金属合金层或者具有至少两个不同的单层的多层制成。适合作为导电种子层(111)的金属和金属合金是从由以下各项组成的一组当中选择的:铜、锡、钴、镍、银、锡合金(比如锡铅合金、锡银合金)、铜合金(比如铜镍合金、铜铬合金、铜钌合金、铜铑合金、铜银合金、铜铱合金、铜钯合金、铜铂合金、铜金合金和铜稀土合金、铜镍银合金、铜镍稀土金属合金)、镍合金(比如镍磷合金和镍硼合金)以及钴合金(比如钴钨磷合金和钴钼磷合金)。
作为导电种子层(111),铜、铜合金、镍和镍合金是最为优选的。
根据本发明的一个优选实施例,所述导电种子层(111)还可以通过无电镀覆方法形成,其中催化金属不使用贵金属而是使用铜作为催化金属。针对在不导电表面上形成这样的催化铜的典型实例可以在US 3,993,491和US 3,993,848中找到。
所述导电种子层(111)的厚度优选地小于10μm,并且更加优选的是处于0.1和5μm之间。
接下来,通过电镀到导电种子层(111)上而优选地沉积铜或铜合金层(112)(图3e)。
适当的铜和铜合金电镀浴成分在本领域内是已知的。可以应用对于镀覆通常所使用的铜或铜合金镀浴成分和处理参数。优选的铜镀浴成分包括水、铜离子源、例如硫酸和/或甲磺酸之类的酸、以及从由以下各项组成的一组当中选择的一种或更多种有机添加剂:增白添加剂、载体添加剂(carrier additive)、匀染添加剂(leveler additive)以及润湿剂。在应当沉积铜合金的情况下,其他可选的添加剂例如是卤素离子(比如氯离子)以及第二金属离子源。
由于图案化的镀覆抗阻剂层(108)也被导电种子层(111)覆盖,因此铜或铜合金层(112)的电镀也在这一层上。铜或铜合金层(112)的厚度在图案化的镀覆抗阻剂层(108)上面应当优选不超出10μm,并且更加优选的是不超出6μm。
可以使用DC镀覆和反向脉冲(reverse pulse)镀覆全部二者来将铜或铜合金作为铜或铜合金层(112)沉积到导电种子层(111)上。
在本发明的一个实施例中,利用反向脉冲镀覆并且在存在不可溶阳极的情况下从还包括Fe3+离子的含水镀浴(aqueous plating bath)沉积铜或铜合金。
在根据本发明的方法的步骤(vi)中,蚀刻去除铜或铜合金层(112)的被镀覆在图案化的镀覆抗阻剂层(108)上面的那些部分。与此同时,被镀覆到第二开口(110)中的类似数量(在该层的厚度方面)的铜或铜合金层(112)也被蚀刻去除。在图3f中图示了根据本发明的方法的步骤(vi)。
在本发明的一个实施例中,在去除铜或铜合金层(112)之前,在后来形成硅太阳能电池(102)之间的布线(113)的铜或铜合金层(112)的那些部分上方,不将附加的蚀刻抗阻剂施加到铜或铜合金层(112)上。
术语“蚀刻抗阻剂”在这里被定义成任何种类的图案化屏障,例如感光成像(photo imageable)的或丝网印刷的有机抗阻剂和金属蚀刻抗阻剂,其防止在蚀刻期间不合期望地去除所述蚀刻抗阻剂下方的金属材料。
所述去除优选地通过化学蚀刻一定数量的铜或铜合金层(112)来实施,所蚀刻的数量足以从导电种子层(111)、硅太阳能电池(102)之间的布线(113)以及布线(113)下方的布线加固柱(114)去除铜或铜合金层(112)。如图3f中所示,布线(113)下方的所述布线加固柱(114)优选地垂直于两个硅太阳能电池(102)和(102’)之间的水平间隔(103)。布线加固柱(114)可以具有圆柱、线或一部分线的形状。
在本发明的一个实施例中,通过蚀刻去除一定数量的铜或铜合金层(112),所去除的数量足以还去除第二开口(110)内部的铜或铜合金层(112)的一部分。在沉积在第二开口(110)内部的铜或铜合金层(112)的厚度方面,该部分可以优选的是0.1到10μm,更加优选的是0.5到5μm。
可以通过电解方式或者化学方式来实施对于铜或铜合金层(112)的蚀刻。此外,机械抛光可以被单独应用或者与电解或化学剥离相组合应用来去除铜或铜合金层(112)。
例如在C. F. Coombs, Jr.的“Printed Circuits Handbook(印刷电路手册)”,第5版,2001年,McGraw-Hill,第33.4章中公开了针对铜或铜合金层(112)以及由铜或铜合金组成的导电种子层(111)的典型蚀刻或剥离构成。
在常规实验中选择适当的蚀刻溶液和蚀刻条件。
接下来,在步骤(vi)中通过化学和/或电化学蚀刻去除处在图案化的镀覆抗阻剂层(108)上面的导电种子层(111)的那些部分(图3f)。
可以利用与步骤(v)中的铜或铜合金层(112)相同的方法去除导电种子层(111)。
在本发明的一个实施例中,图案化的镀覆抗阻剂层(108)保留在太阳能模块(101)上,并且在后继的处理步骤中在密封太阳能模块(101)的背面时被用作密封材料。
在本发明的另一个实施例中,在根据本发明的方法中的步骤(vi)之后去除图案化的镀覆抗阻剂层(108)。从而获得如图4中所示的太阳能模块(101)。
可以通过用溶剂接触图案化的镀覆抗阻剂层(108)从太阳能模块(101)去除(剥离)图案化的镀覆抗阻剂层(108),所述溶剂优选是从包括以下各项的一组当中选择的:丙酮、正戊醇、乙酸正戊醇、苯甲醇、1,4-丁二醇、乙酸甲氧基丁酯、乙酸正丁酯、乙酸仲丁酯、正丁醇、2-丁醇、丁基二甘醇、丁基二甘醇乙酯、二甘醇二丁醚、丁基乙二醇、丁基乙二醇乙酯、正丁基三甘醇、氯仿、环己烷、环己醇、环己酮、环己胺、正癸烷、萘烷、双丙酮醇、1,2-二氯乙烷、1,2-二氯苯、1,2-二氯丙烷、二乙醇胺、二甘醇、二甘醇二丁醚、二甘醇二乙醚、二甘醇二甲醚、二甘醇单丁醚、二甘醇单丁醚乙酯、二甘醇单乙醚、二甘醇单甲醚、二甘醇单乙醚乙酯、二乙醚、二乙酮、二甘醇二甲醚、二异丁酮、二异丙胺、二异丙醇胺、二异丙醚、二甲基乙酰胺、二甲基甲酰胺、二甲基亚砜、1,4-二氧杂环乙烷、二戊烯、二丙二醇、二丙二醇单丁醚、二丙二醇单甲醚、正十二烷、丙二醇二乙酯、丙二醇单甲醚、丙二醇单甲醚乙酯、丙二醇单丁醚、丙二醇单丁醚乙酯、三丙二醇单甲醚、三丙二醇单丁醚、3-乙氧基丙酸乙酯、乙醇胺、丙二醇单乙醚、乙氧基丙基乙酯、乙酸乙酯、乙基戊酮、乙苯、2-乙基丁醇、乙基丁酮、乙基二甘醇、乙基二甘醇乙酯、1,2-二氯乙烷、乙二醇、乙二醇二乙醚、乙二醇二甲醚、乙二醇单丁醚、乙二醇单丁醚乙酯、乙二醇单乙醚、乙二醇单乙醚乙酯、乙二醇单异丙醚、乙二醇单甲醚、乙二醇单甲醚乙酯、乙二醇单丙醚、甲酸乙酯、乙基乙二醇、乙基乙二醇乙酯、乙二醇二乙醚、2-乙氧基乙醇、2-乙基己基乙酯、乳酸乙酯、乙基甲酮、蚁酸、乙基甲酮肟、三乙二醇乙醚、呋喃甲醛、糠醇、糠醛、甘油、三乙酸甘油酯、正庚烷、正十六烷、正己烷、己二醇、异乙酸戊酯、异戊醇、异乙酸丁酯、异丁醇、异庚烷、异辛烷、异戊烷、异佛尔酮、异丙醇胺、异乙酸丙酯、异丙醇、异丙基氯、异丙醚、异丙基乙二醇、甲氧基乙酸丙酯、乙酸甲酯、甲醇、甲基戊酮、甲基丁酮、甲基环己烷、甲基环己醇、甲基环己酮、甲基环戊烷、甲基二甘醇、甲基二甘醇乙酯、二氯甲烷、乙酸、甲基乙酮、甲基乙酮肟、乙二醇一甲醚、乙二醇一甲醚乙酯、甲基异戊醇、甲基异戊酮、甲基异丁基甲醇、甲基异丁酮、甲基异丙酮、甲基丙酮、N-甲基吡咯烷酮、甲基叔丁基醚、单氯苯、单乙醇胺、单异丙醇胺、硝基乙烷、硝基甲烷、1-硝基丙烷、2-硝基丙烷、正壬烷、正辛烷、正辛醇、正十五烷、丙酸戊酯、全氯乙烯、乙酸正丙酯、正丙醇、二氯丙烯、丙二醇、丙二醇二乙酯、丙二醇单丁醚、丙二醇单丁醚乙酯、丙二醇单乙醚、丙二醇单甲醚、丙二醇单甲醚乙酯、丙基乙二醇、吡啶、乙酸仲丁酯、正十四烷、四甘醇、四甘醇二甲醚、四氢呋喃、四氢糠醇、四氢化萘、甲苯、三氯乙烷、三氯乙烯、正十三烷、三乙醇胺、三甘醇、三甘醇单乙醚、三甘醇二甲醚、三丙二醇、过氧化氢、三丙二醇单丁醚、三丙二醇单甲醚、正十一烷、二甲苯、均三甲苯、乙酰苯、乙醛、丁内酯、碳酸亚乙酯、碳酸亚丙酯、乙腈、丁腈、N-乙基吡咯烷酮及其混合物。这样的溶剂或者前面提到的溶剂的混合物还可以包括水。
更加优选的是,所述溶剂是从由以下各项组成的一组当中选择的:苯甲醇、蚁酸、二甲基乙酰胺、二甲基甲酰胺、环己酮、乙醇胺、三乙醇胺、乙二醇单丁醚乙酯、乙二醇单乙醚及其混合物。
最为优选的是,所述溶剂是从由以下各项组成的一组当中选择的:蚁酸、苯甲醇、乙二醇单丁醚乙酯、乙二醇单乙醚及其混合物。
在去除图案化的抗阻剂层(108)之前,可以将所述溶剂或溶剂混合物与水混合。
通过浸泡、喷涂或浸渍将图案化的镀覆抗阻剂层(108)与所述溶剂接触。出于剥离的目的,所述溶剂优选地被保持在处于5到100°C范围内的温度,更加优选的是10到90°C,并且最为优选的是15到80°C。剥离期间的接触时间的范围优选地是从1到600s,更加优选的是从10到540s,并且最为优选的是从20到480s。
利用根据本发明的用于在太阳能模块(101)上制造电接触件的镀覆方法,可以在一个处理序列中制造太阳能模块(101)的硅太阳能电池(102)之间的布线(113)。
在本发明的再另一个实施例中,可以同时制造太阳能模块(101)的单独的硅太阳能电池(102)上面的布线:
在步骤(iii)中,在硅太阳能电池(102)上面的镀覆抗阻剂层(108)中形成附加的第三开口。这样的第三开口优选地具有沟槽的形状。接下来,在步骤(iv)中也由导电种子层(111)覆盖所述第三开口,并且随后在步骤(v)中利用铜或铜合金(112)填充所述第三开口。填充到第三开口中的铜或铜合金于是充当每一个单独的硅太阳能电池(102)所需要的“内部”布线。本发明的这一实施例允许在同一个处理序列中制造用于每一个单独的硅太阳能电池(102)的布线以及各个单独的硅太阳能电池(102)之间的布线。
相应地,可以照这样来处理包括几个硅太阳能电池(102)的整个太阳能模块(101),以便在太阳能模块的硅太阳能电池上以及在硅太阳能电池之间沉积全部所需的电接触件。此外,硅太阳能电池(102)之间的布线(113)包括布线加固柱(114),其使得这样的布线(113)与根据现有技术的制造方法相比更加可靠。
通过根据本发明的方法不形成硅太阳能电池(102)的某些部分(例如侧壁)与铜或铜合金层(112)的直接接触。相应地,通过根据本发明的方法还抑制了铜或铜合金(112)与来自硅太阳能电池(102)的硅之间的不合期望的扩散。
Claims (14)
1.一种用于制造太阳能模块上的电接触件的镀覆方法,所述方法包括依照以下顺序的步骤:
(i)提供安放到支持基板上的硅太阳能电池的阵列,各个硅太阳能电池彼此分开一定水平间隔,并且具有在每一个硅太阳能电池上包括至少一个接触区域的暴露表面;
(ii)将镀覆抗阻剂沉积到所述硅太阳能电池阵列的暴露表面上以及太阳能电池之间的水平间隔上;
(iii)在镀覆抗阻剂中形成开口,并且因此暴露出每一个硅太阳能电池上的所述至少一个接触区域以及硅太阳能电池之间的水平间隔的至少一部分;
(iv)在镀覆抗阻剂以及步骤(iii)中形成的开口上面形成导电种子层;
(v)在导电种子层上面形成铜或铜合金层;以及
(vi)对铜或铜合金层和导电种子层的一些部分进行回蚀,所述回蚀足以从镀覆抗阻剂去除铜或铜合金层和导电种子层全部二者,从而留下在步骤(iii)中形成的开口中的铜或铜合金层,并且因此形成硅太阳能电池之间的布线以及电线加固柱。
2.根据权利要求1的方法,其中,所述硅太阳能电池是从包括以下各项的一组当中选择的:单晶硅太阳能电池、多晶硅太阳能电池以及无定形硅太阳能电池。
3.根据任一条在前权利要求的方法,其中,所述硅太阳能电池是基于硅的背面接触电池,其中各个单独电池上以及各个单独电池间的所有布线都附着到硅太阳能电池的背面。
4.根据任一条在前权利要求的方法,其中,所述支持基板由玻璃层以及与硅太阳能电池的阵列接触的密封剂组成。
5.根据任一条在前权利要求的方法,其中,所述水平间隔的宽度范围是从0.5到20mm。
6.根据任一条在前权利要求的方法,其中,通过从包括以下各项的一组当中选择的方法来沉积所述镀覆抗阻剂:淋涂、丝网印刷、辊涂、干法层压以及喷涂。
7.根据任一条在前权利要求的方法,其中,所述镀覆抗阻剂包括以下各项当中的一项或更多项:丙烯酸酯、乙烯/丙烯酸乙酯共聚物、乙烯/甲基丙烯酸酯共聚物、乙烯/丙烯酸共聚物、乙烯/丙烯酸丁酯共聚物、聚甲基戊烯和聚甲基丙烯酸甲酯。
8.根据任一条在前权利要求的方法,其中,所述镀覆抗阻剂包括从由以下各项组成的一组当中选择的填充物:硼酸铝、氧化铝、三水合氧化铝、无烟煤、锑酸钠、五氧化二锑、三氧化锑、磷灰石、绿坡缕石、偏硼酸钡、硫酸钡、硫酸锶、钛酸钡、膨润土、氧化铍、氮化硼、碳酸钙、氢氧化钙、硫酸钙、炭黑、粘土、方英石、硅藻土、白云石、铁酸盐、长石、玻璃珠、石墨、水合硅酸钙、氧化铁、高岭土、锌钡白、氧化镁、云母、二硫化钼、珍珠岩、比如PTFE、PE、聚酰亚胺之类的聚合填充物、浮岩、叶蜡石、橡胶颗粒、煅制氧化硅、熔融氧化硅、沉淀氧化硅、海泡石、石英、砂、板岩粉、滑石、二氧化钛、蛭石、木屑、硅灰石、沸石、硼酸锌、氧化锌、锡酸锌、硫化锌、芳纶纤维、碳纤维、纤维素纤维、和玻璃纤维及他们的混合物。
9.根据任一条在前权利要求的方法,其中,通过从由以下各项组成的一组当中选择的方法形成所述导电种子层:无电镀覆、直接镀覆、物理气相沉积、化学气相沉积以及等离子体增强化学气相沉积。
10.根据任一条在前权利要求的方法,其中,所述导电种子层是从包括铜、铜合金、镍以及镍合金的一组当中选择的。
11.根据任一条在前权利要求的方法,其中,通过电镀来沉积所述铜或铜合金层。
12.根据任一条在前权利要求的方法,其中,在步骤(vi)之后去除图案化的镀覆抗阻剂层。
13.一种太阳能模块,包括被安放到支持基板上的硅太阳能电池的阵列、硅太阳能电池之间的水平间隔、硅太阳能电池之间的布线以及硅太阳能电池之间的布线加固柱,其中所述布线和布线加固柱由铜或铜合金组成。
14.根据权利要求13的太阳能模块,其中,通过电镀来沉积所述布线和布线加固柱。
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