CN104917382B - High voltage starting circuit - Google Patents
High voltage starting circuit Download PDFInfo
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- CN104917382B CN104917382B CN201510404773.0A CN201510404773A CN104917382B CN 104917382 B CN104917382 B CN 104917382B CN 201510404773 A CN201510404773 A CN 201510404773A CN 104917382 B CN104917382 B CN 104917382B
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Abstract
The invention provides a high voltage starting circuit, which comprises a high-low voltage conversion module and a low voltage-output voltage conversion module, wherein the high-low voltage conversion module comprises a first resistance, a second resistance, a third resistance, a first metal oxide semiconductor (MOS) pipe, a current lens unit and a zener diode, a grid electrode of the first MOS pipe receives enable voltage signals which are input from the external, an electrode source is connected with the ground through the first resistance, a drain electrode is connected onto a high voltage power supply through the second resistance, a reference end of the current lens unit is connected onto the drain electrode of the first MOS pipe, an output end of the current lens unit is connected with the ground through the third resistance, the zener diode is connected on the two ends of the third resistance in parallel. The low voltage-output voltage conversion module comprises a fourth MOS pipe, wherein a grid electrode of the fourth MOS pipe is connected onto a drain electrode of a third MOS pipe, the drain electrode is connected onto the high voltage power supply, and a source electrode is connected with the ground. All MOS pipes in the high voltage starting circuit all can adopt low voltage (LV) gate MOS pipes to achieve, and obviously save cost compared with high voltage starting circuits which must adopt high voltage (HV) gate MOS pipes in the prior art.
Description
Technical field
The invention belongs to electronic technology field, more particularly to a kind of high-voltage starting circuit.
Background technology
In high voltage power supply application integrated circuit, it usually needs high voltage power supply is switched to into low pressure carries out signal transacting, waits to locate
Change into High voltage output after the completion of reason again, this is because the area of low-voltage chip is little more than high-voltage chip, switching to that low pressure processes can be with
Save chip cost.
The scheme that traditional high pressure turns low pressure is as follows：High-tension current is driven to produce by existing high-voltage starting circuit first
Device, then HVLDO (height turns low-voltage linear voltage regulator) is started by high-tension current generator, then low pressure is driven by HVLDO
Current generator, drives band gap level bias circuit to produce low-voltage finally by low-tension current generator.
However, existing high-voltage starting circuit need to be realized using HV gate MOS (control pole can high voltage bearing metal-oxide-semiconductor),
Due to such metal-oxide-semiconductor high cost, thus urgently provide a kind of high-voltage starting circuit without the need for adopting HV gate MOS.
The content of the invention
For above-mentioned the deficiencies in the prior art, the present invention provide it is a kind of need not using control pole can high voltage bearing metal-oxide-semiconductor be
The high-voltage starting circuit of achievable high voltage startup, with reduces cost.
To achieve these goals, the present invention is adopted the following technical scheme that：
A kind of high-voltage starting circuit, including high pressure turns low-voltage module and low pressure transfers out voltage module, wherein,
The high pressure turns low-voltage module to be included：
One first resistor, a second resistance and a 3rd resistor；
One first metal-oxide-semiconductor, its grid receives the enable voltage signal of periphery input, and source electrode is connect by the first resistor
Ground, drain electrode is connected to a high voltage power supply by the second resistance；
One current lens unit, its reference edge is connected to the drain electrode of first metal-oxide-semiconductor, and output end is by the 3rd resistor
Ground connection；And
Zener diode, it is connected in parallel on the two ends of the 3rd resistor；
The low pressure transfers out voltage module including one the 4th metal-oxide-semiconductor, and its grid is connected to the leakage of the 3rd metal-oxide-semiconductor
Pole, drain electrode is connected to the high voltage power supply, source ground.
Further, the current lens unit includes：
One second metal-oxide-semiconductor, its source electrode is connected to the high voltage power supply, and drain electrode is connected to the drain electrode of first metal-oxide-semiconductor, grid
Pole is connected to the drain electrode of its own and connects the high voltage power supply by the second resistance；And
One the 3rd metal-oxide-semiconductor, its source electrode is connected to the high voltage power supply, and drain electrode is grounded by the 3rd resistor, and grid connects
It is connected to the grid of second metal-oxide-semiconductor.
Preferably, the low pressure transfers out voltage module also includes an electric capacity, and it is connected to the source electrode of the 4th metal-oxide-semiconductor
Between ground.
Preferably, the low pressure transfers out voltage module also includes one the 4th resistance, and it is connected in parallel on the electric capacity two ends.
Further, first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are N-type metal-oxide-semiconductor, and two metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are P
Type metal-oxide-semiconductor.
In sum, all metal-oxide-semiconductors in high-voltage starting circuit of the invention can be realized using LV gate metal-oxide-semiconductors,
Compared with the high-voltage starting circuit that prior art must adopt HV gate metal-oxide-semiconductors, it is clear that save cost.Additionally, of the invention
Can completely close without electric leakage, the EN voltage ranges of switch can be designed.
Description of the drawings
Fig. 1 is the circuit theory diagrams of the high-voltage starting circuit of the present invention.
Specific embodiment
It is careful to coordinate accompanying drawing to give citing further concrete again to make to give farther insight into the technological means and feature of the present invention
After being illustrated in：
Fig. 1 shows the circuit theory diagrams of the high-voltage starting circuit of the present invention, wherein, VCC represents high voltage power supply, VSS tables
Show ground, VEN represents enable voltage signal, the low-voltage of VDD indication circuits output.
As shown in figure 1, the high-voltage starting circuit of the present invention turns low-voltage module including high pressure and low pressure transfers out voltage-mode
The two modules are described in detail separately below by block.
High pressure turns low-voltage module to be included：First resistor R1, second resistance R2,3rd resistor R3, the first metal-oxide-semiconductor MN1, second
Metal-oxide-semiconductor MP1, the 3rd metal-oxide-semiconductor MP2 and Zener diode D1, and second and third metal-oxide-semiconductor MP1, MP2 constitute a current lens unit.
Wherein, the annexation between each element is as follows：The grid level of the first metal-oxide-semiconductor MN1 is used to receive the enable voltage letter of periphery input
Number VEN, its source electrode is grounded by first resistor R1；The source electrode of the second metal-oxide-semiconductor MP1 and the 3rd metal-oxide-semiconductor MP2 is directly connected to respectively
VCC, their grid level is connected to VCC by second resistance R2, and drain electrode (the i.e. base of current lens unit of the second metal-oxide-semiconductor MP1
Quasi- end) it is connected with the drain electrode of the first metal-oxide-semiconductor MN1 while its own grid is connected to, the drain electrode of the 3rd metal-oxide-semiconductor MP2 is (i.e. electric
The output end of stream mirror unit) it is grounded by 3rd resistor R3；Zener diode D1 is connected in parallel on the two ends of 3rd resistor R3.
Low pressure transfers out voltage module including the 4th metal-oxide-semiconductor MN2, electric capacity C1 and the 4th resistance R4.Wherein, the 4th metal-oxide-semiconductor
The drain electrode of MN2 is connected to VCC, and grid level is connected to the drain electrode of the 3rd metal-oxide-semiconductor MP2, and source electrode is grounded by the electric capacity C1 for voltage stabilizing；
4th resistance R4 is connected in parallel on electric capacity C1 two ends.It should be understood that the voltage VDD of the source electrode output of the 4th metal-oxide-semiconductor MN2 is the present invention
High-voltage starting circuit output voltage, the voltage can directly feed low-tension current generator (not shown), by low tension
Flow generator can start HVLDO, so as to produce low-voltage chip required voltage.
It should be noted that all metal-oxide-semiconductors in the high-voltage starting circuit of the present invention only need to be using LV gate MOS (controls
The metal-oxide-semiconductor of system extremely low pressure), and expensive HV gate MOS need not be adopted, such that it is able to cost-effective.In the reality of Fig. 1
In applying example, first, fourth metal-oxide-semiconductor MN1, MN2 is NMOS, and second, third metal-oxide-semiconductor MP1, MP2 are PMOS.
The operation principle of the present invention is as follows：
When VEN*R2/R1 is more than the critical voltage VthMP1 of MP1, MP1 begins with electric current IM and flows through；And in current mirror
Under effect, MP2 has same current IM to export, and now the voltage of MN2 grid level VG point is Vg (MN2)=IM*R3, then MN2 biased electricals
Pressure Vbis (MN2)=Vg (MN2)-Vth (MN2).Therefore, when VEN is gradually increasing, Vbis (MN2) is also gradually increasing, you can open
Dynamic follow-up low-tension current generator.
In the present invention, D1 selects the Zener diode that breakdown voltage is 5V, and the peak for representing Vg (MN2) is 5V, then
Vbis (MN2) highests are used not over 5V-Vth (MN2) thus available for the low-voltage chip of follow-up low-tension current generator.
In addition, resistance R1-R4 also has another to act on, i.e. as VEN=0, first resistor R1 can be pulled down to VEN
The grid voltage of MP1 can be pulled to VCC by VSS, second resistance R2, and 3rd resistor R3 can be pulled down to the grid voltage of MN2
The bias voltage of MN2 can be pulled down to VSS by VSS, the 4th resistance R4.
Above-described, only presently preferred embodiments of the present invention is not intended to limit the scope of the present invention, and the present invention's is upper
Stating embodiment can also make a variety of changes.What i.e. every claims and description according to the present patent application were done
Simply, equivalence changes and modification, fall within the claims of patent of the present invention.The not detailed description of the present invention it is equal
For routine techniques content.
Claims (5)
1. a kind of high-voltage starting circuit, it is characterised in that turn low-voltage module including high pressure and low pressure transfers out voltage module, its
In,
The high pressure turns low-voltage module to be included：
One first resistor, a second resistance and a 3rd resistor；
One first metal-oxide-semiconductor, its grid receives the enable voltage signal of periphery input, and source electrode is grounded by the first resistor, leaks
Pole is connected to a high voltage power supply by the second resistance；
One current lens unit, its reference edge is connected to the drain electrode of first metal-oxide-semiconductor, and output end is connect by the 3rd resistor
Ground；And
Zener diode, it is connected in parallel on the two ends of the 3rd resistor；
The low pressure transfers out voltage module including one the 4th metal-oxide-semiconductor, and its grid is connected to the output end of the current lens unit,
Drain electrode is connected to the high voltage power supply, source ground.
2. high-voltage starting circuit according to claim 1, it is characterised in that the current lens unit includes：
One second metal-oxide-semiconductor, its source electrode is connected to the high voltage power supply, and drain electrode is connected to the drain electrode of first metal-oxide-semiconductor, and grid connects
It is connected to the drain electrode of its own and the high voltage power supply is connected by the second resistance；And
One the 3rd metal-oxide-semiconductor, its source electrode is connected to the high voltage power supply, and drain electrode is grounded by the 3rd resistor, and grid is connected to
The grid of second metal-oxide-semiconductor.
3. high-voltage starting circuit according to claim 1, it is characterised in that the low pressure transfers out voltage module also to be included
One electric capacity, it is connected between the source electrode of the 4th metal-oxide-semiconductor and ground.
4. high-voltage starting circuit according to claim 3, it is characterised in that the low pressure transfers out voltage module also to be included
One the 4th resistance, it is connected in parallel on the electric capacity two ends.
5. high-voltage starting circuit according to claim 2, it is characterised in that first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are N
Type metal-oxide-semiconductor, two metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are p-type metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510404773.0A CN104917382B (en) | 2015-07-10 | 2015-07-10 | High voltage starting circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510404773.0A CN104917382B (en) | 2015-07-10 | 2015-07-10 | High voltage starting circuit |
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| Publication Number | Publication Date |
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| CN104917382A CN104917382A (en) | 2015-09-16 |
| CN104917382B true CN104917382B (en) | 2017-05-10 |
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|---|---|---|---|
| CN201510404773.0A Active CN104917382B (en) | 2015-07-10 | 2015-07-10 | High voltage starting circuit |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105141119B (en) * | 2015-10-10 | 2018-01-05 | 上海灿瑞科技股份有限公司 | A kind of upper electricity is reset and under-voltage locking start-up circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101951137A (en) * | 2010-10-12 | 2011-01-19 | 苏州大学 | High-voltage start-up circuit |
| CN102097928B (en) * | 2011-01-31 | 2013-05-08 | 西安展芯微电子技术有限公司 | High voltage starting circuit applied to AC/DC converter |
| CN102185468B (en) * | 2011-04-27 | 2013-05-01 | 大连连顺电子有限公司 | Multiplexing circuit of high-voltage starting switch and Sense FET and switching power supply applying circuit |
| CN102778912B (en) * | 2012-07-27 | 2014-03-05 | 电子科技大学 | Startup circuit and power supply system integrated with same |
| US9385587B2 (en) * | 2013-03-14 | 2016-07-05 | Sandisk Technologies Llc | Controlled start-up of a linear voltage regulator where input supply voltage is higher than device operational voltage |
| CN204835918U (en) * | 2015-07-10 | 2015-12-02 | 灿瑞半导体(上海)有限公司 | High pressure starting circuit |
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Address after: 200081 Shanghai, North Sichuan Road, room 1717, No. 1006, room Applicant after: SHANGHAI CANRUI TECHNOLOGY CO., LTD. Address before: 200081 Shanghai, North Sichuan Road, room 1717, No. 1006, room Applicant before: Orient-Chip Semiconductor (Shanghai) Co., Ltd. |
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Inventor after: Luo Jie Inventor after: Li Qiuping Inventor before: Luo Liquan Inventor before: Luo Jie Inventor before: Li Qiuping |
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Address after: 200072 Jingan District extension Road, Shanghai science and technology building, room 149, Room 308 Applicant after: SHANGHAI CANRUI TECHNOLOGY CO., LTD. Address before: 200081 Shanghai, North Sichuan Road, room 1717, No. 1006, room Applicant before: SHANGHAI CANRUI TECHNOLOGY CO., LTD. |
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