CN104916659B - 使用累积层作为电极的与发光二极管合并的有机薄膜晶体管 - Google Patents

使用累积层作为电极的与发光二极管合并的有机薄膜晶体管 Download PDF

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Publication number
CN104916659B
CN104916659B CN201510109094.0A CN201510109094A CN104916659B CN 104916659 B CN104916659 B CN 104916659B CN 201510109094 A CN201510109094 A CN 201510109094A CN 104916659 B CN104916659 B CN 104916659B
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Prior art keywords
light emitting
electrode
organic semiconductor
organic
emitting devices
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Chinese (zh)
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CN104916659A (zh
Inventor
B·马萨里
A·甘威尔
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Kemp Er Yindu Institute Of Technology
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Kemp Er Yindu Institute Of Technology
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/125Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
CN201510109094.0A 2014-03-12 2015-03-12 使用累积层作为电极的与发光二极管合并的有机薄膜晶体管 Expired - Fee Related CN104916659B (zh)

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IN708DE2014 IN2014DE00708A (enExample) 2014-03-12 2014-03-12
IN708/DEL/2014 2014-03-12

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CN104916659A CN104916659A (zh) 2015-09-16
CN104916659B true CN104916659B (zh) 2017-12-26

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CN201510109094.0A Expired - Fee Related CN104916659B (zh) 2014-03-12 2015-03-12 使用累积层作为电极的与发光二极管合并的有机薄膜晶体管

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US (1) US9536935B2 (enExample)
CN (1) CN104916659B (enExample)
IN (1) IN2014DE00708A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107369784B (zh) * 2017-08-31 2019-11-26 深圳市华星光电半导体显示技术有限公司 Oled-tft基板及其制造方法、显示面板
TWI667780B (zh) * 2018-08-02 2019-08-01 友達光電股份有限公司 顯示面板
CN111192969B (zh) * 2020-01-08 2021-01-05 大连理工大学 一种基于聚f8bt晶体的发光场效应管结构及制备方法
JP7428977B2 (ja) * 2021-02-03 2024-02-07 Jsr株式会社 ディスプレイの製造方法及びディスプレイ
US20240290903A1 (en) * 2023-02-28 2024-08-29 Novatek Microelectronics Corp. Light sensing transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101188246A (zh) * 2006-11-15 2008-05-28 群康科技(深圳)有限公司 顶部发光型有机发光二极管及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4366039B2 (ja) * 2002-02-04 2009-11-18 キヤノン株式会社 有機半導体デバイス及びその製造方法
TW554525B (en) 2002-08-28 2003-09-21 Ind Tech Res Inst Organic integration device of thin film transistor and light emitting diode
KR100669733B1 (ko) * 2004-10-14 2007-01-16 삼성에스디아이 주식회사 유기박막 트랜지스터 및 이를 이용한 유기전계 발광표시장치
GB2450675A (en) 2007-04-04 2009-01-07 Cambridge Display Tech Ltd Active matrix organic displays
BR112012007317A2 (pt) * 2009-09-30 2016-04-19 Sharp Kk dispositivo de exibição
CN102511022B (zh) * 2009-09-30 2014-10-29 夏普株式会社 显示装置
US9105728B2 (en) * 2012-07-24 2015-08-11 Qualcomm Mems Technologies, Inc. Multi-gate thin-film transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101188246A (zh) * 2006-11-15 2008-05-28 群康科技(深圳)有限公司 顶部发光型有机发光二极管及其制造方法

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Publication number Publication date
US9536935B2 (en) 2017-01-03
CN104916659A (zh) 2015-09-16
US20150262531A1 (en) 2015-09-17
IN2014DE00708A (enExample) 2015-09-18

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