CN104915653A - Light beam excitation type boost filtering fingerprint recognition system - Google Patents
Light beam excitation type boost filtering fingerprint recognition system Download PDFInfo
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- CN104915653A CN104915653A CN201510317478.1A CN201510317478A CN104915653A CN 104915653 A CN104915653 A CN 104915653A CN 201510317478 A CN201510317478 A CN 201510317478A CN 104915653 A CN104915653 A CN 104915653A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
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Abstract
The invention discloses a light beam excitation type boost filtering fingerprint recognition system. The system is mainly formed by a fingerprint collector, a control chip HV arranged inside the fingerprint collector, a fingerprint scanning circuit connected with the control chip HV, an image acquisition unit connected with the fingerprint scanning circuit, an imaging lens connected with the image acquisition unit, an emitter coupled type asymmetric trigger circuit arranged between the connection points of the fingerprint scanning circuit and the image acquisition unit, and a light beam excitation type logic amplifying circuit connected with the control chip HV. The system can improve voltage in the circuit and meanwhile, can also filter clutters, so that accuracy and application range of the product are improved further; and the brand-new emitter coupled type asymmetric trigger circuit is added to a conventional fingerprint recognition system, so that the defect that once a fingerprint has dusts or water stains, the fingerprint cannot be identified due to unstable performance of a conventional fingerprint identifier can be thoroughly overcome.
Description
Technical field
The present invention relates to a kind of fingerprint recognition system, specifically refer to a kind of beam excitation formula boosting filtering type fingerprint recognition system.
Background technology
At present, existing single fingerprint identification device generally all adopts a fingerprint capturer to realize, not only its collection, discriminating fingerprint and management function are more single, and its recognition efficiency is low, only can carry out the alignments of 1:1 or 1:N at one time to a user.Meanwhile, these single fingerprint identification device accuracy of identification are lower at present, unstable properties, once finger has dust or water stain, just often there will be the situation that can not identify continuously.Therefore, how effectively overcoming the function singleness that existing fingerprint recognition system exists, the defect that recognition efficiency is low and precision is not high, is the task of top priority of people.
Summary of the invention
The object of the invention is to overcome current single fingerprint identification device function singleness, recognition efficiency is low and precision is not high defect, provide a kind of dependable performance, a kind of beam excitation formula boosting filtering type fingerprint recognition system that accuracy of identification is high.
The present invention is achieved through the following technical solutions: a kind of beam excitation formula boosting filtering type fingerprint recognition system, primarily of fingerprint capturer, be arranged on the control chip HV of fingerprint capturer inside, the finger scan circuit be connected with this control chip HV, the image acquisition units be connected with finger scan circuit, the imaging lens be connected with this image acquisition units, and the asymmetric trigger circuit of emitter-base bandgap grading manifold type be arranged between finger scan circuit and the tie point of image acquisition units form, control chip HV is connected with boosting filtering circuit, boosting filtering circuit 10 is also connected with beam excitation formula logic amplifying circuit, the asymmetric trigger circuit of described emitter-base bandgap grading manifold type are by the asymmetric circuit of emitter-base bandgap grading manifold type, and the passive π type filtering circuit to be connected with its output terminal forms.
Described boosting filtering circuit is by operational amplifier P101, operational amplifier P102, triode VT101, triode VT102, triode VT103, triode VT104, P pole is as input end, the diode D101 that N pole is connected with the emitter of triode VT101, positive pole is connected with the N pole of diode D101, the electric capacity C101 that negative pole is connected with the base stage of triode VT101 after resistance R102, positive pole is connected with the base stage of triode VT101, the electric capacity C102 that negative pole is connected with the collector of triode VT102, one end is connected with the N pole of diode D101, the inductance L 101 that the other end is connected with the collector of triode VT102, one end is connected with the collector of triode VT101, the resistance R101 that the other end is connected with the base stage of triode VT102, N pole is connected with the base stage of triode VT101, the diode D102 that P pole is connected with the collector of triode VT103, be serially connected in the resistance R106 between the base stage of triode VT103 and emitter, minus earth, the electric capacity C103 that positive pole is connected with the negative pole of electric capacity C101 after resistance R103, N pole is connected with the base stage of triode VT103, the voltage stabilizing diode D103 that P pole is connected with the positive pole of electric capacity C103 after resistance R104, one end is connected with the positive pole of electric capacity C103, the resistance R105 that the other end is connected with the negative input end of operational amplifier P101, positive pole is connected with the negative input end of operational amplifier P101, the electric capacity C104 that negative pole is connected with the output terminal of operational amplifier P101, negative pole is connected with the negative pole of electric capacity C104 after resistance R107, the electric capacity C105 that positive pole is connected with the negative input end of operational amplifier P102, one end is connected with the negative pole of electric capacity C105, the resistance R108 that the other end is connected with the positive input terminal of operational amplifier P102, minus earth, the electric capacity C106 that positive pole is connected with the positive input terminal of operational amplifier P102, one end is connected with the emitter of triode VT104, the resistance R109 that the other end is connected with the positive pole of electric capacity C105, and one end is connected with the positive pole of electric capacity C105, the resistance R110 that the other end is connected with the collector of triode VT102 forms, wherein, the collector of triode VT102 is connected with the collector of triode VT104, the emitter of triode VT103 is connected with the base stage of triode VT104, the emitter of triode VT102 is connected with the negative pole of electric capacity C104 with the P pole of voltage stabilizing diode D103 simultaneously, the positive pole of electric capacity C105 is also connected with the output terminal of operational amplifier P102, the output terminal of the current collection of triode VT102 very circuit.
Described beam excitation formula logic amplifying circuit is primarily of power amplifier P3, Sheffer stroke gate IC1, Sheffer stroke gate IC2, Sheffer stroke gate IC3, negative pole is connected with the in-phase end of power amplifier P3, the polar capacitor C8 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C8, the resistance R12 of other end ground connection after diode D4, positive pole is connected with the tie point of diode D4 with resistance R12, the polar capacitor C10 of minus earth, one end is connected with second input end of Sheffer stroke gate IC1, the resistance R13 that the other end is connected with the in-phase end of power amplifier P3, be serially connected in the resistance R14 between the end of oppisite phase of power amplifier P3 and output terminal, one end is connected with the output terminal of Sheffer stroke gate IC1, the resistance R16 that the other end is connected with second input end of Sheffer stroke gate IC3, positive pole is connected with the output terminal of Sheffer stroke gate IC2, the electric capacity C9 that negative pole is connected with second input end of Sheffer stroke gate IC3, and one end is connected with the positive pole of polar capacitor C10, the resistance R15 that the other end is connected with second input end of Sheffer stroke gate IC2 forms, the first input end of described Sheffer stroke gate IC1 is connected with the end of oppisite phase of power amplifier P3, and its output terminal is connected with the first input end of Sheffer stroke gate IC2, and the first input end of Sheffer stroke gate IC3 is connected with the output terminal of power amplifier P3, the output terminal of described Sheffer stroke gate IC3 is then connected with the P pole of diode D101.
Further, described emitter-base bandgap grading manifold type Asymmetric Electric route triode Q1, triode Q2, triode Q3, be serially connected in the first-level filtering wave circuit between the emitter of triode Q2 and the base stage of triode Q3, be serially connected in the resistance R7 between the collector of triode Q3 and the collector of diode Q2, be serially connected in the resistance R3 between the collector of triode Q1 and the collector of triode Q2, be serially connected in the secondary filter circuit between the emitter of triode Q1 and passive π type filtering circuit, be serially connected in three grades of wave filters between the base stage of triode Q1 and passive π type filtering circuit, and the resistance R2 be serially connected between the base stage of triode Q1 and passive π type filtering circuit and the resistance R6 be serially connected between the base stage of triode Q3 and passive π type filtering circuit forms, the base stage of described triode Q2 is connected with the collector of triode Q1, and its collector is connected with passive π type filtering circuit, the emitter of described triode Q2 and the equal ground connection of emitter of triode Q3.
Described passive π type filtered electrical routing capacitance C1, electric capacity C2, and the resistance R8 be serially connected between the positive pole of electric capacity C1 and the positive pole of electric capacity C2 forms; The collector of described triode Q2 is then connected with the positive pole of electric capacity C2.
Described finger scan circuit is connected with the GATE pin of main control chip HV by base stage, collector is connected with the CS pin of main control chip HV after the primary coil L1 of transformer T1 emitter is then successively through the triode Q4 that resistance R9 is connected with the CS pin of main control chip HV after resistance R10, and two backup each other and the secondary link I be connected with LED respectively and secondary link II composition.
Described secondary link I to be connected with the Same Name of Ends of the secondary coil L2 of transformer T1 the diode D1 that P pole is then connected with the non-same polarity of secondary coil L2 after resistance R12 by N pole, and form with the electric capacity C6 that resistance R12 is in parallel, and the two ends of this electric capacity C6 are then connected with the both positive and negative polarity of LED respectively; Meanwhile, the positive pole of electric capacity C6 is connected with the positive pole of electric capacity C1, and its negative pole is connected with the negative pole of electric capacity C1.
Described secondary link II to be connected with the Same Name of Ends of the secondary coil L3 of transformer T1 the diode D2 that P pole is then connected with the non-same polarity of secondary coil L3 after resistance R13 by N pole, and form with the electric capacity C7 that resistance R13 is in parallel, and the two ends of this electric capacity C7 are connected with the both positive and negative polarity of LED respectively; Meanwhile, the positive pole of electric capacity C7 is connected with the positive pole of electric capacity C1, and its negative pole is then connected with the negative pole of electric capacity C1.
For guaranteeing result of use, described electric capacity C1, electric capacity C2 are patch capacitor, and described first-level filtering wave circuit, secondary filter circuit and three grades of filtering circuits are RC filtering circuit.
The present invention compared with prior art, has the following advantages and beneficial effect:
(1) not only one-piece construction is very simple in the present invention, and it makes and very easy to use, and it interiorly at one time can also carry out fingerprint recognition to multiple user, and therefore its function is very powerful, can improve knowledge treatment effeciency significantly.
(2) the present invention adopts high precision identification processing system to be used as processing core, can increase exponentially fingerprint recognition efficiency, reliability and security, and be easier to the beneficial effect expanding fingerprint identification device function.
(3) the present invention adds the brand-new asymmetric trigger circuit of emitter-base bandgap grading manifold type in traditional fingerprint recognition system, therefore thoroughly can overcome the unstable properties existing for conventional fingerprint recognizer, on fingerprint, have dust or the water stain defect that can not identify.
(4) the present invention is provided with boosting filtering circuit, can promote the voltage in circuit, can also filter simultaneously, further increase accuracy and the scope of application of product to clutter.
Accompanying drawing explanation
Fig. 1 is integrated circuit structural representation of the present invention.
Fig. 2 is the circuit diagram of boosting filtering circuit of the present invention.
Description of reference numerals:
10, boost filtering circuit; 20, image acquisition units; 30, imaging lens.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention is primarily of the fingerprint capturer being with Camera communication interface and USB communication interface, be arranged on the control chip HV of fingerprint capturer inside, the finger scan circuit be connected with this control chip HV, the image acquisition units 20 be connected with finger scan circuit, and the imaging lens 30 be connected with this image acquisition units 20 forms.For guaranteeing the stable performance of the application, the application is also provided with the asymmetric trigger circuit of emitter-base bandgap grading manifold type between finger scan circuit and the tie point of image acquisition units 20, the boosting filtering circuit 10 that control chip HV connects, and the beam excitation formula logic amplifying circuit also connected on boosting filtering circuit 10.
As shown in Figure 2, described boosting filtering circuit 10 by operational amplifier P101, operational amplifier P102, triode VT101, triode VT102, triode VT103, triode VT104, resistance R101, resistance R102, resistance R103, resistance R104, resistance R105, resistance R106, resistance R107, resistance R108, resistance R109, resistance R110, electric capacity C101, electric capacity C102, electric capacity C103, electric capacity C104, electric capacity C105, electric capacity C106, diode D101, diode D102, voltage stabilizing diode D103.During connection, the P pole of diode D101 is as input end, N pole is connected with the emitter of triode VT101, the positive pole of electric capacity C101 is connected with the N pole of diode D101, negative pole is connected with the base stage of triode VT101 after resistance R102, the positive pole of electric capacity C102 is connected with the base stage of triode VT101, negative pole is connected with the collector of triode VT102, one end of inductance L 101 is connected with the N pole of diode D101, the other end is connected with the collector of triode VT102, one end of resistance R101 is connected with the collector of triode VT101, the other end is connected with the base stage of triode VT102, the N pole of diode D102 is connected with the base stage of triode VT101, P pole is connected with the collector of triode VT103, between the base stage that resistance R106 is serially connected in triode VT103 and emitter, the minus earth of electric capacity C103, positive pole is connected with the negative pole of electric capacity C101 after resistance R103, the N pole of voltage stabilizing diode D103 is connected with the base stage of triode VT103, P pole is connected with the positive pole of electric capacity C103 after resistance R104, one end of resistance R105 is connected with the positive pole of electric capacity C103, the other end is connected with the negative input end of operational amplifier P101, the positive pole of electric capacity C104 is connected with the negative input end of operational amplifier P101, negative pole is connected with the output terminal of operational amplifier P101, the negative pole of electric capacity C105 is connected with the negative pole of electric capacity C104 after resistance R107, positive pole is connected with the negative input end of operational amplifier P102, one end of resistance R108 is connected with the negative pole of electric capacity C105, the other end is connected with the positive input terminal of operational amplifier P102, the minus earth of electric capacity C106, positive pole is connected with the positive input terminal of operational amplifier P102, one end of resistance R109 is connected with the emitter of triode VT104, the other end is connected with the positive pole of electric capacity C105, one end of resistance R110 is connected with the positive pole of electric capacity C105, the other end is connected with the collector of triode VT102, wherein, the collector of triode VT102 is connected with the collector of triode VT104, the emitter of triode VT103 is connected with the base stage of triode VT104, the emitter of triode VT102 is connected with the negative pole of electric capacity C104 with the P pole of voltage stabilizing diode D103 simultaneously, the positive pole of electric capacity C105 is also connected with the output terminal of operational amplifier P102, the output terminal of the current collection of triode VT102 very circuit.
Described beam excitation formula logic amplifying circuit is primarily of power amplifier P3, Sheffer stroke gate IC1, Sheffer stroke gate IC2, Sheffer stroke gate IC3, negative pole is connected with the in-phase end of power amplifier P3, the polar capacitor C8 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C8, the resistance R12 of other end ground connection after diode D4, positive pole is connected with the tie point of diode D4 with resistance R12, the polar capacitor C10 of minus earth, one end is connected with second input end of Sheffer stroke gate IC1, the resistance R13 that the other end is connected with the in-phase end of power amplifier P3, be serially connected in the resistance R14 between the end of oppisite phase of power amplifier P3 and output terminal, one end is connected with the output terminal of Sheffer stroke gate IC1, the resistance R16 that the other end is connected with second input end of Sheffer stroke gate IC3, positive pole is connected with the output terminal of Sheffer stroke gate IC2, the electric capacity C9 that negative pole is connected with second input end of Sheffer stroke gate IC3, and one end is connected with the positive pole of polar capacitor C10, the resistance R15 that the other end is connected with second input end of Sheffer stroke gate IC2 forms.
The first input end of described Sheffer stroke gate IC1 is connected with the end of oppisite phase of power amplifier P3, and its output terminal is connected with the first input end of Sheffer stroke gate IC2, and the first input end of Sheffer stroke gate IC3 is connected with the output terminal of power amplifier P3; The output terminal of described Sheffer stroke gate IC3 is then connected with the P pole of diode D101.
The asymmetric trigger circuit of described emitter-base bandgap grading manifold type are then by the asymmetric circuit of emitter-base bandgap grading manifold type, and the passive π type filtering circuit be connected with its output terminal forms.Wherein, emitter-base bandgap grading manifold type Asymmetric Electric route triode Q1, triode Q2, triode Q3, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8 and electric capacity C3, electric capacity C4 and electric capacity C5 form.
Passive π type filtering circuit is by electric capacity C1, electric capacity C2, and is serially connected in the low-pass filter circuit that the resistance R8 between the positive pole of electric capacity C1 and the positive pole of electric capacity C2 forms.According to the actual requirements, this passive π type filtering circuit also can be high-pass filtering circuit.During connection, the negative pole of electric capacity C1 is connected with the negative pole of electric capacity C2, forms a loop to guarantee resistance R8, between electric capacity C1 and electric capacity C2.The positive pole of electric capacity C1 and negative pole then form output terminal of the present invention.For guaranteeing result of use, electric capacity C1 and electric capacity C2 is patch capacitor.
As shown in Figure 1, resistance R5 and electric capacity C3 is in parallel, and forms first-level filtering wave circuit; Resistance R4 and electric capacity C4 is in parallel, and forms secondary filter circuit; Resistance R1 and electric capacity C5 is in parallel, and forms three grades of filtering circuits.During connection, first-level filtering wave circuit is serially connected between the emitter of triode Q2 and the base stage of triode Q3, resistance R7 is serially connected between the collector of triode Q3 and the collector of diode Q2, resistance R3 is serially connected between the collector of triode Q1 and the collector of triode Q2, secondary filter circuit is then serially connected between the emitter of triode Q1 and the negative pole of electric capacity C2, and three grades of wave filters are then serially connected between the base stage of triode Q1 and the negative pole of electric capacity C2.
Described resistance R2 is serially connected between the base stage of triode Q1 and the negative pole of electric capacity C2, and resistance R6 is then serially connected between the base stage of triode Q3 and the negative pole of electric capacity C2.For guaranteeing result of use, the base stage of this triode Q2 is connected with the collector of triode Q1, and its collector is connected with the positive pole of electric capacity C2, the emitter of triode Q2 and the equal ground connection of emitter of triode Q3.
Described finger scan circuit is then connected with the GATE pin of main control chip HV by base stage, collector is connected with the CS pin of main control chip HV after the primary coil L1 of transformer T1 emitter is then successively through the triode Q4 that resistance R9 is connected with the CS pin of main control chip HV after resistance R10, and two backup each other and the secondary link I be connected with LED respectively and secondary link II composition.For guaranteeing result of use, this main control chip HV preferentially adopts 9910B type integrated chip to realize.
Wherein, secondary link I to be connected with the Same Name of Ends of the secondary coil L2 of transformer T1 the diode D1 that P pole is then connected with the non-same polarity of secondary coil L2 after resistance R12 by N pole, and form with the electric capacity C6 that resistance R12 is in parallel, and the two ends of this electric capacity C6 are then connected with the both positive and negative polarity of LED respectively.
Secondary link II to be connected with the Same Name of Ends of the secondary coil L3 of transformer T1 the diode D2 that P pole is then connected with the non-same polarity of secondary coil L3 after resistance R13 by N pole, and form with the electric capacity C7 that resistance R13 is in parallel, and the two ends of this electric capacity C7 are connected with the both positive and negative polarity of LED respectively.
Meanwhile, electric capacity C1, electric capacity C6 and electric capacity C7 will be in parallel, and namely electric capacity C6 is connected with the positive pole of electric capacity C1 with the positive pole of electric capacity C7, and electric capacity C6 is connected with the negative pole of electric capacity C1 with the negative pole of electric capacity C7.
As mentioned above, just the present invention can be realized preferably.
Claims (6)
1. a beam excitation formula boosting filtering type fingerprint recognition system, primarily of fingerprint capturer, be arranged on the control chip HV of fingerprint capturer inside, the finger scan circuit be connected with this control chip HV, the image acquisition units (20) be connected with finger scan circuit, the imaging lens (30) be connected with this image acquisition units (20), and the asymmetric trigger circuit of emitter-base bandgap grading manifold type between the tie point being arranged on finger scan circuit and image acquisition units (20) form, it is characterized in that, control chip HV is connected with boosting filtering circuit (10), boosting filtering circuit 10 is also connected with beam excitation formula logic amplifying circuit, the asymmetric trigger circuit of described emitter-base bandgap grading manifold type are by the asymmetric circuit of emitter-base bandgap grading manifold type, and the passive π type filtering circuit to be connected with its output terminal forms, described boosting filtering circuit (10) is by operational amplifier P101, operational amplifier P102, triode VT101, triode VT102, triode VT103, triode VT104, P pole is as input end, the diode D101 that N pole is connected with the emitter of triode VT101, positive pole is connected with the N pole of diode D101, the electric capacity C101 that negative pole is connected with the base stage of triode VT101 after resistance R102, positive pole is connected with the base stage of triode VT101, the electric capacity C102 that negative pole is connected with the collector of triode VT102, one end is connected with the N pole of diode D101, the inductance L 101 that the other end is connected with the collector of triode VT102, one end is connected with the collector of triode VT101, the resistance R101 that the other end is connected with the base stage of triode VT102, N pole is connected with the base stage of triode VT101, the diode D102 that P pole is connected with the collector of triode VT103, be serially connected in the resistance R106 between the base stage of triode VT103 and emitter, minus earth, the electric capacity C103 that positive pole is connected with the negative pole of electric capacity C101 after resistance R103, N pole is connected with the base stage of triode VT103, the voltage stabilizing diode D103 that P pole is connected with the positive pole of electric capacity C103 after resistance R104, one end is connected with the positive pole of electric capacity C103, the resistance R105 that the other end is connected with the negative input end of operational amplifier P101, positive pole is connected with the negative input end of operational amplifier P101, the electric capacity C104 that negative pole is connected with the output terminal of operational amplifier P101, negative pole is connected with the negative pole of electric capacity C104 after resistance R107, the electric capacity C105 that positive pole is connected with the negative input end of operational amplifier P102, one end is connected with the negative pole of electric capacity C105, the resistance R108 that the other end is connected with the positive input terminal of operational amplifier P102, minus earth, the electric capacity C106 that positive pole is connected with the positive input terminal of operational amplifier P102, one end is connected with the emitter of triode VT104, the resistance R109 that the other end is connected with the positive pole of electric capacity C105, and one end is connected with the positive pole of electric capacity C105, the resistance R110 that the other end is connected with the collector of triode VT102 forms, wherein, the collector of triode VT102 is connected with the collector of triode VT104, the emitter of triode VT103 is connected with the base stage of triode VT104, the emitter of triode VT102 is connected with the negative pole of electric capacity C104 with the P pole of voltage stabilizing diode D103 simultaneously, the positive pole of electric capacity C105 is also connected with the output terminal of operational amplifier P102, the output terminal of the current collection of triode VT102 very circuit,
Described beam excitation formula logic amplifying circuit is primarily of power amplifier P3, Sheffer stroke gate IC1, Sheffer stroke gate IC2, Sheffer stroke gate IC3, negative pole is connected with the in-phase end of power amplifier P3, the polar capacitor C8 of positive pole ground connection after optical diode D3, one end is connected with the positive pole of polar capacitor C8, the resistance R12 of other end ground connection after diode D4, positive pole is connected with the tie point of diode D4 with resistance R12, the polar capacitor C10 of minus earth, one end is connected with second input end of Sheffer stroke gate IC1, the resistance R13 that the other end is connected with the in-phase end of power amplifier P3, be serially connected in the resistance R14 between the end of oppisite phase of power amplifier P3 and output terminal, one end is connected with the output terminal of Sheffer stroke gate IC1, the resistance R16 that the other end is connected with second input end of Sheffer stroke gate IC3, positive pole is connected with the output terminal of Sheffer stroke gate IC2, the electric capacity C9 that negative pole is connected with second input end of Sheffer stroke gate IC3, and one end is connected with the positive pole of polar capacitor C10, the resistance R15 that the other end is connected with second input end of Sheffer stroke gate IC2 forms, the first input end of described Sheffer stroke gate IC1 is connected with the end of oppisite phase of power amplifier P3, and its output terminal is connected with the first input end of Sheffer stroke gate IC2, and the first input end of Sheffer stroke gate IC3 is connected with the output terminal of power amplifier P3, the output terminal of described Sheffer stroke gate IC3 is then connected with the P pole of diode D101.
2. a kind of beam excitation formula boosting filtering type fingerprint recognition system according to claim 1, it is characterized in that, described emitter-base bandgap grading manifold type Asymmetric Electric route triode Q1, triode Q2, triode Q3, be serially connected in the first-level filtering wave circuit between the emitter of triode Q2 and the base stage of triode Q3, be serially connected in the resistance R7 between the collector of triode Q3 and the collector of diode Q2, be serially connected in the resistance R3 between the collector of triode Q1 and the collector of triode Q2, be serially connected in the secondary filter circuit between the emitter of triode Q1 and passive π type filtering circuit, be serially connected in three grades of wave filters between the base stage of triode Q1 and passive π type filtering circuit, and the resistance R2 be serially connected between the base stage of triode Q1 and passive π type filtering circuit and the resistance R6 be serially connected between the base stage of triode Q3 and passive π type filtering circuit forms, the base stage of described triode Q2 is connected with the collector of triode Q1, and its collector is connected with passive π type filtering circuit, the emitter of described triode Q2 and the equal ground connection of emitter of triode Q3.
3. a kind of beam excitation formula boosting filtering type fingerprint recognition system according to claim 2, it is characterized in that, described passive π type filtered electrical routing capacitance C1, electric capacity C2, and the resistance R8 be serially connected between the positive pole of electric capacity C1 and the positive pole of electric capacity C2 forms; The collector of described triode Q2 is then connected with the positive pole of electric capacity C2.
4. a kind of beam excitation formula boosting filtering type fingerprint recognition system according to claim 3, it is characterized in that, described finger scan circuit is connected with the GATE pin of main control chip HV by base stage, collector is connected with the CS pin of main control chip HV after the primary coil L1 of transformer T1 emitter is then successively through the triode Q4 that resistance R9 is connected with the CS pin of main control chip HV after resistance R10, and two backup each other and the secondary link I be connected with LED respectively and secondary link II composition;
Described secondary link I to be connected with the Same Name of Ends of the secondary coil L2 of transformer T1 the diode D1 that P pole is then connected with the non-same polarity of secondary coil L2 after resistance R12 by N pole, and form with the electric capacity C6 that resistance R12 is in parallel, and the two ends of this electric capacity C6 are then connected with the both positive and negative polarity of LED respectively; Meanwhile, the positive pole of electric capacity C6 is connected with the positive pole of electric capacity C1, and its negative pole is connected with the negative pole of electric capacity C1;
Described secondary link II to be connected with the Same Name of Ends of the secondary coil L3 of transformer T1 the diode D2 that P pole is then connected with the non-same polarity of secondary coil L3 after resistance R13 by N pole, and form with the electric capacity C7 that resistance R13 is in parallel, and the two ends of this electric capacity C7 are connected with the both positive and negative polarity of LED respectively; Meanwhile, the positive pole of electric capacity C7 is connected with the positive pole of electric capacity C1, and its negative pole is then connected with the negative pole of electric capacity C1.
5. a kind of beam excitation formula boosting filtering type fingerprint recognition system according to claim 2, it is characterized in that, described electric capacity C1, electric capacity C2 are patch capacitor.
6. a kind of beam excitation formula boosting filtering type fingerprint recognition system according to claim 5, it is characterized in that, described first-level filtering wave circuit, secondary filter circuit and three grades of filtering circuits are RC filtering circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510317478.1A CN104915653A (en) | 2014-11-25 | 2015-06-11 | Light beam excitation type boost filtering fingerprint recognition system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410686067.5A CN104408419A (en) | 2014-11-25 | 2014-11-25 | Light beam excitation type fingerprint recognition system |
| CN2014106860675 | 2014-11-25 | ||
| CN201510317478.1A CN104915653A (en) | 2014-11-25 | 2015-06-11 | Light beam excitation type boost filtering fingerprint recognition system |
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| CN104915653A true CN104915653A (en) | 2015-09-16 |
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| CN201410686067.5A Pending CN104408419A (en) | 2014-11-25 | 2014-11-25 | Light beam excitation type fingerprint recognition system |
| CN201510317478.1A Withdrawn CN104915653A (en) | 2014-11-25 | 2015-06-11 | Light beam excitation type boost filtering fingerprint recognition system |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410686067.5A Pending CN104408419A (en) | 2014-11-25 | 2014-11-25 | Light beam excitation type fingerprint recognition system |
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| Country | Link |
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| CN (2) | CN104408419A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110632470A (en) * | 2019-09-19 | 2019-12-31 | 国网天津市电力公司电力科学研究院 | High-voltage test transformer with fingerprint identification function |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104408425A (en) * | 2014-11-28 | 2015-03-11 | 成都创图科技有限公司 | Logic protection emitter coupling type fingerprint recognizing system |
-
2014
- 2014-11-25 CN CN201410686067.5A patent/CN104408419A/en active Pending
-
2015
- 2015-06-11 CN CN201510317478.1A patent/CN104915653A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110632470A (en) * | 2019-09-19 | 2019-12-31 | 国网天津市电力公司电力科学研究院 | High-voltage test transformer with fingerprint identification function |
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| CN104408419A (en) | 2015-03-11 |
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Application publication date: 20150916 |
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