CN104911540A - LED anti-ESD ability improved ITO film electron beam evaporation method - Google Patents
LED anti-ESD ability improved ITO film electron beam evaporation method Download PDFInfo
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- CN104911540A CN104911540A CN201410102885.6A CN201410102885A CN104911540A CN 104911540 A CN104911540 A CN 104911540A CN 201410102885 A CN201410102885 A CN 201410102885A CN 104911540 A CN104911540 A CN 104911540A
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Abstract
The invention proposes an LED (light emitting diode) anti-ESD (electro-static discharge) ability improved ITO (indium tin oxide) film electron beam evaporation method. The method optimizes the evaporation conditions mainly from four aspects: ITO evaporation rate, vacuum degree, oxygen input quantity and oxygen input position. The bottom layer ITO evaporation employs low rate, high vacuum, low oxygen input quantity and near source oxygen input position to ensure the bottom ITO initial crystal nucleus fine, the ITO crystal grains growing on the crystal nucleus are small in size, and no gap exists among the crystal grains, so that the crystals can be more compact. The middle layer ITO adopts high evaporation rate, low vacuum, high oxygen input quantity and near source oxygen input position to ensure transition of refractivity of the bottom layer ITO, the middle layer ITO and the upper layer ITO. The upper layer ITO evaporation adopts high rate, low vacuum, high oxygen input quantity and far source oxygen input position to ensure high transmittance and high evaporation efficiency of the ITO film. The method provided by the invention does not need to add other equipment besides an electron beam evaporation station, and can acquire the ITO film with strong anti-ESD ability, compact structure and contact with gallium nitride. The method has the characteristics of simplicity, low equipment cost and high production efficiency, and is suitable for large-scale mass production.
Description
Technical field
The present invention relates to a kind of electron beam evaporation methods of ito thin film, particularly a kind of electron beam evaporation methods improving the ito thin film of LED against esd ability, belongs to field of photoelectric technology.
Background technology
The method that gan is prepared ito thin film employing has electron beam evaporation plating, sputtering, plasmaassisted electron beam evaporation plating three class.Wherein, electron beam evaporation plating is compared with sputtering, plasmaassisted electron beam evaporation plating, and its equipment price is cheap, maintenance of the equipment simple, and prepared ito thin film output is high, becomes the evaporation coating method generally adopted in LED industry.
But electron beam evaporation plating is thin, fine and close not as good as sputtering, ito thin film crystal grain prepared by plasmaassisted electron beam evaporation plating; often there will be because ITO contacts not fine and close with gan and cause local ohmic contact bad; when running into the large voltge surge being greater than 500 volts; can be bad because of ohmic contact; and produce heat effect; thus cause puncturing of chip, i.e. chip against esd ability.
In order to address this problem, patent has been had to refer to the raising of electron beam evaporation plating ITO condition optimizing promotion ITO crystalline quality, as Chinese patent CN101645336A " formation of indium tin oxide layer ", this patent proposes in detail and promotes that ITO is by the method for amorphous to crystallization.A kind of method wherein mentioned allows substrate quickly through high temperature ITO sediment chamber before its temperature increases above predetermined threshold temperature, to deposit the crystallization ITO of layer.Allow substrate Multiple through then out sediment chamber, until ITO layer reaches expectation thickness.Between passing through, allow substrate fully cool to keep substrate temperature lower than predetermined threshold temperature in the upper process once passed through at every turn.This method can improve the crystalline quality of ITO, thus improves density, the against esd ability of ITO; But this method needs to add other expensive device outside electron beam evaporation platform, as high/low temperature sediment chamber, cooling room etc., considerably increases production cost, and non-evaporation step increases, and extends the whole ITO production time, reduces production efficiency.
In addition, Chinese patent CN103451605A " a kind of evaporation coating method of ITO alligatoring ", disclosing a kind of substep ITO evaporation replaces conventional I TO evaporation to carry out the method for ITO alligatoring, adopt the mode of ITO substep evaporation, speed when changing every layer of ITO evaporation and oxygen flow, thus make epitaxial wafer upper strata ITO reach the effect of alligatoring, also can improve the crystalline quality of ito thin film simultaneously.But speed, oxygen flow when this patent only considers evaporation, be not optimized as vacuum tightness, logical oxygen position other evaporation conditions, cannot ensure size and the distribution situation of the initial nucleus of lowest layer ITO.If when evaporation bottom ITO, low vacuum, logical oxygen position are high, can cause nucleus because of atom incide gallium nitride surface speed low and cause that degree of crystallinity is poor, nucleus distribution is scattered etc., and situation produces, these all can make the crystal grown on this type of nucleus occur loose, even there is the situation in cavity, these loose, empty local ohmic contact are poor, when large voltage, heavy current impact, there will be the phenomenon that electric current is crowded herein, the heat produced is enough to puncture chip, namely resists the ability of ESD.
Chinese patent CN102194956A " method of evaporation ITO ", a kind of method of evaporation ITO is provided, first the semiconductor structure of ITO to be deposited is placed on and holds on sheet dish by it, be evacuated to after electron beam evaporation plating machine chamber vacuum degree reaches 5 × more than 10-6Torr, hold sheet dish described in making again to start to rotate, and stablize 10-30min after preset temp is heated to it, then oxygen valve is opened, start to carry out preplating to described semiconductor structure when oxygen flow is stabilized in preset flow, the preplating time is 1-5min, finally start evaporation ITO with the evaporation rate preset, evaporation on described semiconductor structure is made to go out the ITO of preset thickness, visible, the method of evaporation ITO of the present invention is by controlling oxygen flow, evaporation temperature, ITO thickness, evaporation rate control ITO resistance, keep higher transmittance simultaneously, ITO resistance and epitaxial gan layers are matched, thus make current expansion evenly, effectively can improve chip brightness.But this patent is constant evaporation rate
complete
iTO evaporation.And patent of the present invention is point three sections of evaporation rate (0.3-
0.5-
0.7-
) and take different vacuum tightness, oxygen-supply quantity, logical oxygen position completes ito thin film evaporation, complete ito thin film evaporation, test ESD yield more than 95% under adopting 14mil × 28mil Human Body Model, membrane structure is fine and close, and against esd ability is relatively stronger.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of electron beam evaporation methods improving the ito thin film of LED against esd ability, while raising LED against esd ability, also assures that the high permeability of ITO.
Terminological interpretation:
LED:Light Emitting Diode, photodiode;
ESD:Electro-Static discharge, Electro-static Driven Comb.
ITO:Indium Tin Oxide, tin indium oxide is a kind of transparent conductive film.
Summary of the invention:
The present invention is optimized from four aspects evaporation condition: ITO evaporation rate, vacuum tightness, oxygen-supply quantity, logical oxygen position.Lowest layer ITO evaporation adopts comparatively low rate, high vacuum, low oxygen-supply quantity, nearly Tong Yang position, source, ensures that the initial nucleus of lowest layer ITO is fine and closely woven, nucleus grows ITO grain-size little, intercrystalline tight, thus make crystal finer and close; Middle layer ITO adopts higher evaporation rate, rough vacuum, higher oxygen-supply quantity, nearly Tong Yang position, source, and the specific refractory power of guarantee lowest layer ITO, middle layer ITO and upper strata ITO has transition; Upper strata ITO evaporation adopts two-forty, rough vacuum, high oxygen-supply quantity, Tong Yang position, source far away, ensures that the high permeability of ito thin film and high evaporation efficiency, against esd ability are relative stronger.
Detailed Description Of The Invention:
Improve an electron beam evaporation methods for the ito thin film of LED against esd ability, comprise the steps:
(1) at LED surface first evaporation lowest layer ITO, its evaporation rate 0.3-
thickness is 150-
vacuum tightness 5x10 in evaporation cavity
-5-7x10
-5torr, oxygen-supply quantity 5-10sccm, logical oxygen position is nearly source position, i.e. oxygen intake distance evaporation source 5-10cm;
(2) in step (1) the described lowest layer ITO surface evaporation middle layer ITO, evaporation rate 0.5-
thickness is 300-
vacuum tightness 7x10
-5-8x10
-5torr, oxygen-supply quantity 8-15sccm, logical oxygen position is nearly source position, i.e. oxygen intake distance evaporation source 5-10cm;
(3) in step (2) described middle layer ITO surface evaporation upper strata ITO, evaporation rate 0.7-
thickness is 500-
vacuum tightness 8x10
-5-1.0x10
-4torr, oxygen-supply quantity 10-20sccm, high oxygen-supply quantity position, namely oxygen intake is at the top of evaporation cavity.
Preferably, described step (1) epitaxial wafer comprises gallium nitride base blue light LED, AlGaInP quaternary red-light LED epitaxial wafer; The structure of epitaxial wafer is followed successively by substrate, buffer layer, N-type layer, Multiple Quantum Well, P-type layer from bottom to top;
Preferably, in described step (1), oxygen intake can be aimed at evaporation source by nearly Tong Yang position, source, indium, tin atom energy and Sauerstoffatom abundant catalytic oxidation when making evaporation, in high vacuum situation, the oxide compound of indium, tin and the probability of collision of other air molecules reduce, and ensure that the initial nucleus of ITO is fine and closely woven, nucleus grow ITO grain-size little, intercrystalline tight, thus crystal is finer and close;
Preferably, the ITO crystal grain diameter obtained in described step (1) can reach 10-20nm;
Preferably, the evaporation condition of described step (2) can ensure that the specific refractory power of lowest layer ITO, middle layer ITO and upper strata ITO forms transition;
Preferably, the high oxygen-supply quantity of described step (3) can ensure the high permeability of ito thin film, and after its annealing, wavelength reaches more than 90% in 455nm transmitance.
Not elaborate in technique scheme of the present invention and to limit, all with reference to the prior art that LED makes.
Beneficial effect of the present invention:
1, the present invention except electron beam evaporation platform without the need to adding the equipment costly such as plasma device, high/low temperature sediment chamber, cooling room again, low cost of manufacture;
2, the inventive method obtains the strong compact structure of against esd ability, contacts good ito thin film with gan.Experiment proves unstable relative to common ITO evaporation chip ESD yield, there is yield and is less than 80%, is less than the chip of 50%, and adopt the chip ESD yield of the inventive method ITO evaporation all more than 95%;
3, by optimizing evaporation rate, vacuum tightness, oxygen-supply quantity, logical oxygen position comprehensively, do not increase extra processing step, the inventive method is simple, production efficiency is high, is applicable to mass-producing volume production.
Accompanying drawing explanation
The LED structure schematic diagram that Fig. 1 obtains by the inventive method;
The against esd ability effect contrast figure of Fig. 2 common ITO evaporation and ITO evaporation of the present invention.
Wherein, 1, substrate; 2, epitaxial film; 3, lowest layer ITO; 4, middle layer ITO; 5, the superiors ITO.
Embodiment
Below in conjunction with Figure of description and embodiment, the present invention is described in detail, but is not limited thereto.
Embodiment 1,
As shown in Figure 1, a kind of electron beam evaporation methods improving the ito thin film of LED against esd ability, described ito thin film growth is in LED, epitaxial wafer comprises substrate 1 and the epitaxial film 2 on it, and described ito thin film comprises and comprises lowest layer ITO3, middle layer ITO4, the superiors ITO5 tri-layers from bottom to top successively;
Described epitaxial wafer comprises gallium nitride base blue light LED, AlGaInP quaternary red-light LED epitaxial wafer; The structure of epitaxial wafer is followed successively by substrate, buffer layer, N-type layer, Multiple Quantum Well, P-type layer from bottom to top.
Embodiment 2,
Improve an electron beam evaporation methods for the ito thin film of LED against esd ability, comprise the steps:
(1) at the first evaporation lowest layer ITO in LED surface, during evaporation lowest layer ITO, evaporation rate
thickness is
vacuum tightness 5x10
-5torr, oxygen-supply quantity 5sccm, logical oxygen position is nearly source position, i.e. oxygen intake distance evaporation source 5cm;
(2) in evaporation ITO middle layer, step (1) described lowest layer ITO surface, evaporation rate
thickness is
vacuum tightness is 7x10
-5torr, oxygen-supply quantity 10sccm, logical oxygen position is nearly source position, i.e. oxygen intake distance evaporation source 5cm;
(3) in evaporation ITO upper strata, step (2) described middle layer ITO surface, evaporation rate
thickness is
vacuum tightness is 8x10
-5torr, oxygen-supply quantity 15sccm, high oxygen-supply quantity position, namely oxygen intake is at the top of evaporation cavity.
Through recording, the ITO crystal grain diameter obtained by above-mentioned steps can reach 15nm; After ito thin film annealing, wavelength reaches 95% in 455nm transmitance.
Embodiment 3,
A kind of electron beam evaporation methods improving the ito thin film of LED against esd ability as described in Example 1, its difference is, in step (1), evaporation rate is
oxygen-supply quantity 10sccm.
Through recording, the ITO crystal grain diameter obtained by above-mentioned steps can reach 17nm; After ito thin film annealing, wavelength reaches 95% in 455nm transmitance.
Embodiment 4,
A kind of electron beam evaporation methods improving the ito thin film of LED against esd ability as described in Example 1, its difference is that step (2) medium-rate is
oxygen-supply quantity 15sccm.
Through recording, the ITO crystal grain diameter obtained by above-mentioned steps can reach 15nm; After ito thin film annealing, wavelength reaches 94% in 455nm transmitance.
Embodiment 5,
A kind of electron beam evaporation methods improving the ito thin film of LED against esd ability as described in Example 1, its difference is that step (3) medium-rate is
oxygen-supply quantity is 20sccm, and all the other steps are constant.
Through recording, the ITO crystal grain diameter obtained by above-mentioned steps can reach 18nm; After ito thin film annealing, wavelength reaches 92% in 455nm transmitance.
Comparative example 6,
Use in this comparative example chip model, size and embodiment 2 chips be identical, and the parameter of the test ESD adopted is also identical with embodiment 1, specific as follows:
Adopt the chip of 14mil × 28mil, test ESD adopts Human Body Model, reverse voltage 2000V, and yield if electric leakage is less than 0.2 μ A, then judges that chip against esd ability is as qualified after judging that specification: ESD tests.Contrast is done to the ESD yield of ITO evaporation described in embodiment 2 and common ITO evaporation: common ITO evaporation chip ESD yield is unstable, there is yield to be less than 80%, to be less than the chip of 50%, and adopt the chip ESD yield of the inventive method ITO evaporation all more than 95%.
In sum, utilize the ITO chip ESD yield of the inventive method evaporation higher, anti-static electrictity release ability is higher.
Claims (3)
1. improve an electron beam evaporation methods for the ito thin film of LED against esd ability, it is characterized in that, comprise the steps:
(1) at LED surface first evaporation lowest layer ITO, its evaporation rate 0.3-
thickness is 150-
vacuum tightness 5x10 in evaporation cavity
-5-7x10
-5torr, oxygen-supply quantity 5-10sccm, logical oxygen position is nearly source position, i.e. oxygen intake distance evaporation source 5-10cm;
(2) in step (1) the described lowest layer ITO surface evaporation middle layer ITO, evaporation rate 0.5-
thickness is 300-
vacuum tightness 7x10
-5-8x10
-5torr, oxygen-supply quantity 8-15sccm, logical oxygen position is nearly source position, i.e. oxygen intake distance evaporation source 5-10cm;
(3) in step (2) described middle layer ITO surface evaporation upper strata ITO, evaporation rate 0.7-
thickness is 500-
vacuum tightness 8x10
-5-1.0x10
-4torr, oxygen-supply quantity 10-20sccm, high oxygen-supply quantity position, namely oxygen intake is at the top of evaporation cavity.
2. a kind of electron beam evaporation methods improving the ito thin film of LED against esd ability according to claim 1, is characterized in that, described step (1) epitaxial wafer comprises gallium nitride base blue light LED, AlGaInP quaternary red-light LED epitaxial wafer; The structure of epitaxial wafer is followed successively by substrate, buffer layer, N-type layer, Multiple Quantum Well, P-type layer from bottom to top.
3. a kind of electron beam evaporation methods improving the ito thin film of LED against esd ability according to claim 1, it is characterized in that, the ITO crystal grain diameter obtained in described step (1) can reach 10-20nm.
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|---|---|---|---|
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Cited By (6)
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|---|---|---|---|---|
| CN105679887A (en) * | 2016-01-25 | 2016-06-15 | 山东浪潮华光光电子股份有限公司 | ITO thin film for multi-directionally grown crystal grains, preparation method thereof, LED chip and preparation method thereof |
| CN106229392A (en) * | 2016-08-31 | 2016-12-14 | 山东浪潮华光光电子股份有限公司 | A kind of manufacture method of the ito thin film improving LED anti-ESD ability |
| CN109698258A (en) * | 2017-10-20 | 2019-04-30 | 山东浪潮华光光电子股份有限公司 | A kind of preparation method of the GaAs base LED wafer with roughening current extending |
| CN110707185A (en) * | 2019-10-17 | 2020-01-17 | 扬州乾照光电有限公司 | Manufacturing method of low-resistance high-penetration transparent conductive layer and LED chip |
| CN111525012A (en) * | 2020-04-29 | 2020-08-11 | 厦门三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN112349849A (en) * | 2020-11-13 | 2021-02-09 | 新余学院 | Method for quickly evaporating perovskite solar cell electrode and device preparation thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679887A (en) * | 2016-01-25 | 2016-06-15 | 山东浪潮华光光电子股份有限公司 | ITO thin film for multi-directionally grown crystal grains, preparation method thereof, LED chip and preparation method thereof |
| CN105679887B (en) * | 2016-01-25 | 2018-02-06 | 山东浪潮华光光电子股份有限公司 | A kind of ito thin film of multi-direction growth crystal grain and preparation method thereof, LED chip and preparation method thereof |
| CN106229392A (en) * | 2016-08-31 | 2016-12-14 | 山东浪潮华光光电子股份有限公司 | A kind of manufacture method of the ito thin film improving LED anti-ESD ability |
| CN106229392B (en) * | 2016-08-31 | 2019-05-07 | 山东浪潮华光光电子股份有限公司 | A kind of production method for the ito thin film improving the anti-ESD ability of LED |
| CN109698258A (en) * | 2017-10-20 | 2019-04-30 | 山东浪潮华光光电子股份有限公司 | A kind of preparation method of the GaAs base LED wafer with roughening current extending |
| CN109698258B (en) * | 2017-10-20 | 2020-04-21 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaAs-based LED wafer with coarsened current expansion layer |
| CN110707185A (en) * | 2019-10-17 | 2020-01-17 | 扬州乾照光电有限公司 | Manufacturing method of low-resistance high-penetration transparent conductive layer and LED chip |
| CN111525012A (en) * | 2020-04-29 | 2020-08-11 | 厦门三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN111525012B (en) * | 2020-04-29 | 2021-11-12 | 厦门三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN112349849A (en) * | 2020-11-13 | 2021-02-09 | 新余学院 | Method for quickly evaporating perovskite solar cell electrode and device preparation thereof |
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