CN104908377A - Multilayer film antireflection glass and production method thereof - Google Patents

Multilayer film antireflection glass and production method thereof Download PDF

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CN104908377A
CN104908377A CN201410087985.6A CN201410087985A CN104908377A CN 104908377 A CN104908377 A CN 104908377A CN 201410087985 A CN201410087985 A CN 201410087985A CN 104908377 A CN104908377 A CN 104908377A
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magnetron sputtering
sputtering deposition
tunic
described
deposition tunic
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CN201410087985.6A
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Chinese (zh)
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董清世
王润
李晓东
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信义光伏产业(安徽)控股有限公司
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Publication of CN104908377A publication Critical patent/CN104908377A/en

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Abstract

The invention is suitable for the technical fields of the display industry and solar glasses, and discloses a multilayer film antireflection glass and a production method thereof. The multilayer film antireflection glass comprises a transparent base layer, and a first magnetron sputtering deposition layer film with the refractive index of 2.1-2.5 and the thickness of 5-100nm, a second magnetron sputtering deposition layer film with the refractive index of 1.3-1.6 and the thickness of 10-150nm, a third magnetron sputtering deposition layer film with the refractive index of 2.1-2.5 and the thickness of 5-100nm, and a fourth magnetron sputtering deposition layer film with the refractive index of 1.3-1.6 and the thickness of 10-300nm which are arranged on the transparent base layer. The production method comprises the following steps: producing the transparent base layer, and sequentially depositing the first, second, third and fourth magnetron sputtering deposition layer films on the transparent base layer. The multilayer film antireflection glass provided in the embodiment of the invention has the advantages of firm glass film layers, good environment resistance, high transmittance, low cost and high reliability.

Description

Multilayer film anti reflection glass and preparation method thereof

Technical field

The invention belongs to display industry and solar energy glass technical field, particularly relate to a kind of multilayer film anti reflection glass and preparation method thereof.

Background technology

At present, major part display glass and solar energy glass adopt monofilm, are difficult to reach desirable antireflective effect, in order to realize zero reflection at Single wavelength, or at the antireflective effect that wider spectral regions have reached, the antireflective coating of bilayer, three layers of even more multi-layered number can be adopted.Antireflective film in the present invention can suitably adjust through crest by selective membrane layer thickness.

Summary of the invention

The object of the invention is to overcome above-mentioned the deficiencies in the prior art, provide a kind of multilayer film anti reflection glass and preparation method thereof, its antireflective film can suitably adjust through crest by selective membrane layer thickness, and transmitance is high and cost is low, reliability is high.

Technical scheme of the present invention is: a kind of multilayer film anti reflection glass, comprise transparent base layer, described transparent base layer there is refractive index to be 2.1 to 2.5 by magnetron sputtering deposition and thickness is the first magnetron sputtering deposition tunic of 5 to 100nm, described first magnetron sputtering deposition tunic has refractive index to be 1.3 to 1.6 by magnetron sputtering deposition and thickness is the second magnetron sputtering deposition tunic of 10 to 150nm; Described second magnetron sputtering deposition tunic there is refractive index to be 2.1 to 2.5 by magnetron sputtering deposition and thickness is the 3rd magnetron sputtering deposition tunic of 5 to 100nm; Described 3rd magnetron sputtering deposition tunic there is refractive index to be 1.3 to 1.6 by magnetron sputtering deposition and thickness is the 4th magnetron sputtering deposition tunic of 10 to 300nm.

Alternatively, described transparent base layer is iron ion content lower than the ultra-white float glass of 200PPM or the iron ion content ultrawhite flower basic unit lower than 100PPM.

Alternatively, the thickness of described transparent base layer is 1 to 5mm.

Alternatively, described first magnetron sputtering deposition tunic adopts titanium oxide to make.

Alternatively, described second magnetron sputtering deposition tunic adopts silica to make.

Alternatively, described 3rd magnetron sputtering deposition tunic adopts titanium oxide to make.

Alternatively, described 4th magnetron sputtering deposition tunic adopts silica to make.

Present invention also offers a kind of preparation method of above-mentioned multilayer film anti reflection glass, comprise the following steps, prepare transparent base layer, on described transparent base layer, be 2.1 to 2.5 by magnetron sputtering deposition refractive index and thickness is the first magnetron sputtering deposition tunic of 5 to 100nm, on described first magnetron sputtering deposition tunic, be 1.3 to 1.6 by magnetron sputtering deposition refractive index and thickness is the second magnetron sputtering deposition tunic of 10 to 150nm; On described second magnetron sputtering deposition tunic, be 2.1 to 2.5 by magnetron sputtering deposition refractive index and thickness is the 3rd magnetron sputtering deposition tunic of 5 to 100nm; On described 3rd magnetron sputtering deposition tunic, be 1.3 to 1.6 by magnetron sputtering deposition refractive index and thickness is the 4th magnetron sputtering deposition tunic of 10 to 300nm.

Alternatively, when depositing described first magnetron sputtering deposition tunic, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the first magnetron sputtering deposition tunic be made up of TiOX on described transparent base layer;

When depositing described second magnetron sputtering deposition tunic, the Si target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the second magnetron sputtering deposition tunic be made up of SiOX on described transparent base layer;

When depositing described 3rd magnetron sputtering deposition tunic, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the 3rd magnetron sputtering deposition tunic be made up of TiOX on described transparent base layer;

When depositing described 4th magnetron sputtering deposition tunic, the Si target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the 4th magnetron sputtering deposition tunic be made up of SiOX on described transparent base layer.

Alternatively, when depositing described first magnetron sputtering deposition tunic, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the first magnetron sputtering deposition tunic be made up of TiOX on described transparent base layer;

When depositing described second magnetron sputtering deposition tunic, employing AlSi target is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the second magnetron sputtering deposition tunic be made up of AlSiOX on described transparent base layer;

When depositing described 3rd magnetron sputtering deposition tunic, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the 3rd magnetron sputtering deposition tunic be made up of TiOX on described transparent base layer;

When depositing described 4th magnetron sputtering deposition tunic, employing AlSi target is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the 4th magnetron sputtering deposition tunic be made up of AlSiOX on described transparent base layer.

Multilayer film anti reflection glass that the embodiment of the present invention provides and preparation method thereof, glass film layers is more firm, environmental resistance is good, 400 ~ 800nm can reach 94.39% through mean value, 380 ~ 1100nm can reach 96% ~ 97% through peak value, 380 ~ 780nm integration, through reaching 96% ~ 97%, has tremendous contribution for display industry and response curve in the Application of Solar Energy of 400 ~ 800nm.

Accompanying drawing explanation

In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.

Fig. 1 is the floor map of the multilayer film anti reflection glass removal transparent base layer that the embodiment of the present invention provides;

Fig. 2 is the multilayer film anti reflection glass that provides of the embodiment of the present invention and the chemical method antireflective film transmittance curve comparison diagram at 400 ~ 800nm.

Detailed description of the invention

In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.

It should be noted that, when element is called as " being fixed on " or " being arranged at " another element, it can directly on another element or may there is centering elements simultaneously.When an element is known as " being connected to " another element, it can be directly connected to another element or may there is centering elements simultaneously.

Also it should be noted that, the orientation term such as left and right, upper and lower in the present embodiment, is only relative concept or be reference with the normal operating condition of product each other, and should not be regarded as have restrictive.As depicted in figs. 1 and 2, a kind of multilayer film anti reflection glass that the embodiment of the present invention provides, comprise transparent base layer (not shown), transparent base layer can adopt iron ion content to make lower than the ultrawhite flower basic unit etc. of 100PPM lower than the ultra-white float glass of 200PPM or iron ion content, and its thickness can between 1 to 5mm.Described transparent base layer there is refractive index to be 2.1 to 2.5 by magnetron sputtering deposition and thickness is the first magnetron sputtering deposition tunic 11 of 5 to 100nm, described first magnetron sputtering deposition tunic 11 has refractive index to be 1.3 to 1.6 by magnetron sputtering deposition and thickness is the second magnetron sputtering deposition tunic 12 of 10 to 150nm; Described second magnetron sputtering deposition tunic 12 there is refractive index to be 2.1 to 2.5 by magnetron sputtering deposition and thickness is the 3rd magnetron sputtering deposition tunic 13 of 5 to 100nm; Described 3rd magnetron sputtering deposition tunic 13 there is refractive index to be 1.3 to 1.6 by magnetron sputtering deposition and thickness is the 4th magnetron sputtering deposition tunic 14 of 10 to 300nm.After being coated with the first magnetron sputtering deposition tunic 11, second magnetron sputtering deposition tunic 12, the 3rd magnetron sputtering deposition tunic 13 and the 4th magnetron sputtering deposition tunic 14, annealing in process can be carried out.By arranging above-mentioned first magnetron sputtering deposition tunic 11, second magnetron sputtering deposition tunic 12, the 3rd magnetron sputtering deposition tunic 13 and the 4th magnetron sputtering deposition tunic 14, make multilayer film anti reflection glass provided by the present invention at 400 ~ 800nm integration through height, be applicable to display industry and response curve in the Application of Solar Energy etc. of 400 ~ 800nm, display industry can also be applied to.Antireflective coating is also known as anti-reflection film, and its major function is the reverberation reducing or eliminating the optical surfaces such as lens, prism, level crossing, thus increases the light transmission capacity of these elements, reduces or eliminates the veiling glare of system.The simplest anti-reflection film is monofilm, and it is the film that one deck refractive index be plated on optical element optical surface is lower.If the optical thickness of rete is 1/4th of a certain wavelength, the optical path difference of adjacent two-beam is π just, and namely direction of vibration is contrary, and the result of superposition makes optical surface reduce the reverberation of this wavelength.Suitable selection thin-film refractive index, at this moment the reverberation of optical surface can be eliminated completely.Generally, adopting single layer anti reflective coating to be difficult to reach desirable antireflective effect, in order to realize zero reflection at Single wavelength, or at the antireflective effect that wider spectral regions have reached, often adopting the antireflective coating of bilayer, three layers of even more multi-layered number.And; magnetron sputtering method is filled with appropriate argon gas in high vacuum; between negative electrode (negative electrode can be Style Columu Talget or flat target) and anode (plated film locular wall), apply hundreds of K DC voltage, in coating chamber, produce magnet controlled abnormal glow discharge, argon gas is ionized.Argon ion is accelerated by negative electrode and bombarding cathode target surface, is out deposited by target material surface atom sputtering and forms film on the surface of the substrate.By the sputtering time that the target changing unlike material is different with control, the film of unlike material and different-thickness just can be obtained.In the embodiment of the present invention, adopt the more firm main cause of magnetron sputtering rete as follows: dust-proof, the damp proof and grease proofing adhesive strength that improve between film base 1, in coating process; 2, prepare film under vacuo, clean environment, film is vulnerable to pollution not, can obtain that compactness is good, purity is high, the rete of even film layer; 3, owing to all heating product when being coated with the first magnetron sputtering deposition tunic 11, second magnetron sputtering deposition tunic 12, the 3rd magnetron sputtering deposition tunic 13 and the 4th magnetron sputtering deposition tunic 14, heating-up temperature is not higher than 400 DEG C, make substrate temperature high, crystallite dimension is large, and Growing Process of Crystal Particles accelerates, and film condensation defect reduces, recrystallization strengthens, make the formation of film more perfect, thus cause the internal stress of film to reduce, rete combines more firm.But substrate temperature is too high, the thermal stress of film can be made again to increase.For making the total stress of film reduce, substrate heating temperature is wanted suitably, generally not higher than 400 DEG C; 4, carry out necessary annealing in process after film deposition, its mechanism is that film base molecular thermalmotion is aggravated, and forms the very high rete of intensity in interface phase counterdiffusion.Fig. 2 is the multilayer film anti reflection glass that provides of the embodiment of the present invention and the chemical method antireflective film transmittance curve comparison diagram at 400 ~ 800nm.Can find out from the transmittance curve comparison diagram Fig. 2, chemical method antireflective film glass H103 resin is substantially parallel with former H103 resin, it is even rising, multilayer film anti reflection glass H103 resin is then have intersection point with former, ultraviolet and former of near-infrared two parts tranmittance low, 400-800nm, through higher, has peak value, therefore 400-800nm integration is through height.

In embody rule, above-mentioned magnetron sputtering deposition can be magnetically controlled DC sputtering, medium frequency magnetron sputtering, radio-frequency sputtering or pulsed magnetron sputtering etc.Specifically can select according to actual conditions.

Alternatively, described first magnetron sputtering deposition tunic 11 adopts titanium oxide (TiOX) to make, also can adopt other refractive index be 2.1 to 2.5 material by magnetron sputtering deposition in transparent base layer, its thickness can be 5 to 100nm, such as 10,20,30,40,50,60,70,80,90nm etc.

Alternatively, described second magnetron sputtering deposition tunic 12 adopts silica (SiOX) to make, also can adopt other refractive index be 1.3 to 1.6 material by magnetron sputtering deposition in the first magnetron sputtering deposition layer, two its thickness of magnetron sputtering deposition tunic can be 10 to 150nm, such as 20,30,40,50,60,70,80,90,100,110,120,130,140nm etc.

Alternatively, described 3rd magnetron sputtering deposition tunic 13 adopts titanium oxide (TiOX) to make, also can adopt other refractive index be 2.1 to 2.5 material by magnetron sputtering deposition in the second magnetron sputtering deposition tunic 12, its thickness can be 5 to 100nm, such as 10,20,30,40,50,60,70,80,90nm etc.

Alternatively, described 4th magnetron sputtering deposition tunic 14 adopts silica (SiOX) to make, also can adopt other refractive index be 1.3 to 1.6 material by magnetron sputtering deposition in the first magnetron sputtering deposition layer, two its thickness of magnetron sputtering deposition tunic can be 10 to 300nm, such as 20,30,40,50,60,70,80,90,100,110,120,130,140,150,160,170,180,190,200,220,250,280nm etc.

The embodiment of the present invention additionally provides a kind of preparation method for the preparation of above-mentioned multilayer film anti reflection glass, comprise the following steps, prepare transparent base layer, on described transparent base layer, be 2.1 to 2.5 by magnetron sputtering deposition refractive index and thickness is the first magnetron sputtering deposition tunic 11 of 5 to 100nm, on described first magnetron sputtering deposition tunic 11, be 1.3 to 1.6 by magnetron sputtering deposition refractive index and thickness is the second magnetron sputtering deposition tunic 12 of 10 to 150nm; On described second magnetron sputtering deposition tunic 12, be 2.1 to 2.5 by magnetron sputtering deposition refractive index and thickness is the 3rd magnetron sputtering deposition tunic 13 of 5 to 100nm; On described 3rd magnetron sputtering deposition tunic 13, be 1.3 to 1.6 by magnetron sputtering deposition refractive index and thickness is the 4th magnetron sputtering deposition tunic 14 of 10 to 300nm.After being coated with the first magnetron sputtering deposition tunic 11, second magnetron sputtering deposition tunic 12, the 3rd magnetron sputtering deposition tunic 13 and the 4th magnetron sputtering deposition tunic 14, annealing in process can be carried out.By arranging above-mentioned first magnetron sputtering deposition tunic 11, second magnetron sputtering deposition tunic 12, the 3rd magnetron sputtering deposition tunic 13 and the 4th magnetron sputtering deposition tunic 14, make multilayer film anti reflection glass provided by the present invention at 400 ~ 800nm integration through height, be applicable to display industry and response curve in the Application of Solar Energy etc. of 400 ~ 800nm.And; magnetron sputtering method is filled with appropriate argon gas in high vacuum; between negative electrode (negative electrode can be Style Columu Talget or flat target) and anode (plated film locular wall), apply hundreds of K DC voltage, in coating chamber, produce magnet controlled abnormal glow discharge, argon gas is ionized.Argon ion is accelerated by negative electrode and bombarding cathode target surface, is out deposited by target material surface atom sputtering and forms film on the surface of the substrate.By the sputtering time that the target changing unlike material is different with control, the film of unlike material and different-thickness just can be obtained.In the embodiment of the present invention, adopt the more firm main cause of magnetron sputtering rete as follows: dust-proof, the damp proof and grease proofing adhesive strength that improve between film base 1, in coating process; 2, prepare film under vacuo, clean environment, film is vulnerable to pollution not, can obtain that compactness is good, purity is high, the rete of even film layer; 3, owing to all heating product when being coated with the first magnetron sputtering deposition tunic 11, second magnetron sputtering deposition tunic 12, the 3rd magnetron sputtering deposition tunic 13 and the 4th magnetron sputtering deposition tunic 14, heating-up temperature is not higher than 400 DEG C, make substrate temperature high, crystallite dimension is large, and Growing Process of Crystal Particles accelerates, and film condensation defect reduces, recrystallization strengthens, make the formation of film more perfect, thus cause the internal stress of film to reduce, rete combines more firm.But substrate temperature is too high, the thermal stress of film can be made again to increase.For making the total stress of film reduce, substrate heating temperature is wanted suitably, generally not higher than 400 DEG C; 4, carry out necessary annealing in process after film deposition, its mechanism is that film base molecular thermalmotion is aggravated, and form the very high rete of intensity, process stabilizing in interface phase counterdiffusion, rete is firm.

In embody rule, above-mentioned magnetron sputtering deposition can be magnetically controlled DC sputtering, medium frequency magnetron sputtering, radio-frequency sputtering or pulsed magnetron sputtering etc.Specifically can select according to actual conditions.

Particularly, alternatively:

As Benq's layer after former of 3.2mm energy ultrawhite figured glass cutting edging, after cleaning machine cleans and dries up, enter magnetron sputtering coater plated film;

When depositing described first magnetron sputtering deposition tunic 11, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the first magnetron sputtering deposition tunic 11 be made up of TiOX on described transparent base layer;

When depositing described second magnetron sputtering deposition tunic 12, the Si target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the second magnetron sputtering deposition tunic 12 be made up of SiOX on described transparent base layer;

When depositing described 3rd magnetron sputtering deposition tunic 13, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by TiOX(TiO on described transparent base layer x) the 3rd magnetron sputtering deposition tunic 13 that forms;

When depositing described 4th magnetron sputtering deposition tunic 14, the Si target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by SiOX(SiO on described transparent base layer x) the 4th magnetron sputtering deposition tunic 14 that forms;

Or, alternatively: as Benq's layer after former of 3.2mm energy ultrawhite figured glass cutting edging, after cleaning machine cleans and dries up, enter magnetron sputtering coater plated film;

When depositing described first magnetron sputtering deposition tunic 11, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the first magnetron sputtering deposition tunic 11 be made up of TiOX on described transparent base layer;

When depositing described second magnetron sputtering deposition tunic 12, employing AlSi target is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by AlSiOX(AlSiO on described transparent base layer x) the second magnetron sputtering deposition tunic 12 of forming;

When depositing described 3rd magnetron sputtering deposition tunic 13, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits the 3rd magnetron sputtering deposition tunic 13 be made up of TiOX on described transparent base layer;

When depositing described 4th magnetron sputtering deposition tunic 14, employing AlSi target is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by AlSiOX(AlSiO on described transparent base layer x) the 4th magnetron sputtering deposition tunic 14 that forms.

Multilayer film anti reflection glass that the embodiment of the present invention provides and preparation method thereof, glass film layers is more firm, environmental resistance is good, 400 ~ 800nm can reach 94.39% through mean value, 380 ~ 1100nm can reach 96% ~ 97% through peak value, 380 ~ 780nm integration, through reaching 96% ~ 97%, has tremendous contribution for display industry and response curve in the Application of Solar Energy of 400 ~ 800nm.

The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement or improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1. a multilayer film anti reflection glass, comprise transparent base layer, it is characterized in that, described transparent base layer there is refractive index to be 2.1 to 2.5 by magnetron sputtering deposition and thickness is the first magnetron sputtering deposition tunic of 5 to 100nm, described first magnetron sputtering deposition tunic has refractive index to be 1.3 to 1.6 by magnetron sputtering deposition and thickness is the second magnetron sputtering deposition tunic of 10 to 150nm; Described second magnetron sputtering deposition tunic there is refractive index to be 2.1 to 2.5 by magnetron sputtering deposition and thickness is the 3rd magnetron sputtering deposition tunic of 5 to 100nm; Described 3rd magnetron sputtering deposition tunic there is refractive index to be 1.3 to 1.6 by magnetron sputtering deposition and thickness is the 4th magnetron sputtering deposition tunic of 10 to 300nm.
2. multilayer film anti reflection glass as claimed in claim 1, is characterized in that, described transparent base layer is iron ion content lower than the ultra-white float glass of 200PPM or the iron ion content ultrawhite flower basic unit lower than 100PPM.
3. multilayer film anti reflection glass as claimed in claim 1, it is characterized in that, the thickness of described transparent base layer is 1 to 5mm.
4. multilayer film anti reflection glass as claimed any one in claims 1 to 3, is characterized in that, described first magnetron sputtering deposition tunic adopts titanium oxide to make.
5. multilayer film anti reflection glass as claimed any one in claims 1 to 3, is characterized in that, described second magnetron sputtering deposition tunic adopts silica to make.
6. multilayer film anti reflection glass as claimed any one in claims 1 to 3, is characterized in that, described 3rd magnetron sputtering deposition tunic adopts titanium oxide to make.
7. multilayer film anti reflection glass as claimed any one in claims 1 to 3, is characterized in that, described 4th magnetron sputtering deposition tunic adopts silica to make.
8. the preparation method of a multilayer film anti reflection glass according to any one of claim 1 to 7, it is characterized in that, comprise the following steps, prepare transparent base layer, on described transparent base layer, be 2.1 to 2.5 by magnetron sputtering deposition refractive index and thickness is the first magnetron sputtering deposition tunic of 5 to 100nm, on described first magnetron sputtering deposition tunic, be 1.3 to 1.6 by magnetron sputtering deposition refractive index and thickness is the second magnetron sputtering deposition tunic of 10 to 150nm; On described second magnetron sputtering deposition tunic, be 2.1 to 2.5 by magnetron sputtering deposition refractive index and thickness is the 3rd magnetron sputtering deposition tunic of 5 to 100nm; On described 3rd magnetron sputtering deposition tunic, be 1.3 to 1.6 by magnetron sputtering deposition refractive index and thickness is the 4th magnetron sputtering deposition tunic of 10 to 300nm.
9. the preparation method of multilayer film anti reflection glass as claimed in claim 8, is characterized in that,
When depositing described first magnetron sputtering deposition tunic, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by TiO on described transparent base layer xthe the first magnetron sputtering deposition tunic formed;
When depositing described second magnetron sputtering deposition tunic, the Si target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by SiO on described transparent base layer xthe the second magnetron sputtering deposition tunic formed;
When depositing described 3rd magnetron sputtering deposition tunic, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by TiO on described transparent base layer xthe 3rd magnetron sputtering deposition tunic formed;
When depositing described 4th magnetron sputtering deposition tunic, the Si target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by SiO on described transparent base layer xthe 4th magnetron sputtering deposition tunic formed.
10. the preparation method of multilayer film anti reflection glass as claimed in claim 8, is characterized in that,
When depositing described first magnetron sputtering deposition tunic, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by TiO on described transparent base layer xthe the first magnetron sputtering deposition tunic formed;
When depositing described second magnetron sputtering deposition tunic, employing AlSi target is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by AlSiO on described transparent base layer xthe the second magnetron sputtering deposition tunic formed;
When depositing described 3rd magnetron sputtering deposition tunic, the Ti target adopting purity to be not less than 99.9% is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by TiO on described transparent base layer xthe 3rd magnetron sputtering deposition tunic formed;
When depositing described 4th magnetron sputtering deposition tunic, employing AlSi target is sputtering target material and the mist adopting purity to be all not less than Ar, O2 of 99.999% is working gas, deposits by AlSiO on described transparent base layer xthe 4th magnetron sputtering deposition tunic formed.
CN201410087985.6A 2014-03-11 2014-03-11 Multilayer film antireflection glass and production method thereof CN104908377A (en)

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