CN104900493A - Wafer surface high depth-to-width ratio TSV blind hole cleaning method - Google Patents
Wafer surface high depth-to-width ratio TSV blind hole cleaning method Download PDFInfo
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- CN104900493A CN104900493A CN201510259860.1A CN201510259860A CN104900493A CN 104900493 A CN104900493 A CN 104900493A CN 201510259860 A CN201510259860 A CN 201510259860A CN 104900493 A CN104900493 A CN 104900493A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
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- Cleaning By Liquid Or Steam (AREA)
Abstract
The invention discloses a wafer surface high depth-to-width ratio TSV blind hole cleaning method. Multiple wafers are taken to be placed in an ultrasound wafer scrubbing machine, and rinsing is performed by utilizing deionized water and ultrasound wafer scrubbing is performed simultaneously; the wafers are directly taken out of the ultrasound wafer scrubbing machine after ending of ultrasound wafer scrubbing, and then the wafers are placed in pure IPA cleaning fluid to be cleaned; the cleaned wafers are taken out and placed in pure EKC cleaning fluid to be cleaned; the cleaned wafers are taken out to be placed in the pure IPA cleaning fluid to be cleaned; the cleaned wafers are taken out to be placed in a deionized water tank to be rinsed; and the rinsed wafers are spin-dried. Existing equipment and existing cleaning fluid of a wafer production line are adopted so that production cost is relatively low, simultaneous cleaning of multiple wafers can be realized, production efficiency is relatively high and the requirement for large-scale production can be met.
Description
Technical field
The invention belongs to microelectronics technology, be specifically related to the cleaning method of the large depth-to-width ratio TSV blind hole of a kind of crystal column surface.
Background technology
After adopting Bosch etching technics to complete TSV blind hole etching, organic polymer impurity can be produced at madial wall place, hole, in order to form the insulating barrier of high reliability in hole, impurity cleaning is needed to remove, as described in document 1 " The Cleaning Method Which is able to keep the smmoothness of Si (100) (ISTC2008) ", the insulating barrier of high reliability needs to have high-cleanness, high between the interface of substrate and insulating barrier.Current common wafer cleaning technology, and be not suitable for the cleaning of TSV blind hole.As described in document 2 " Particle Removal from Silicon Wafer Surface in Wet Cleaning process (IEEE Transactions on Semiconductor Manufacturing 1993) ", in this method, wafer is placed in rinse bath, adopt cleaning fluid heated wash, effectively can remove the impurity of crystal column surface.
And for the cleaning of TSV blind hole, because air in hole is difficult to discharge, causing cleaning fluid to be difficult to infiltrate, the crystal column surface cleaning method of the routine therefore described in document 2 cannot be applied.Usually adopt at present and vacuumize the process combined with ultrasonic vibration.As described in document 3 " Wet Silicon Etch Process for TSV Reveal (ECTC 2014) ".In this method, first the wafer etched is put into airtight process cavity with monolithic form, after being vacuumized by cavity, adopt spray mode that deionized water is sprayed at crystal column surface, make to inject deionized water in hole.The wafer completing deionized water injection is impregnated into cleaning fluid, and applies ultrasonic vibration in rinse bath, make the displacement in hole between deionized water and cleaning fluid, realize the effective displacement of cleaning fluid to TSV blind hole, the wafer that finally will complete cleaning dries.The method needs to use TSV blind hole purpose-built washing equipment, only monolithic cleaning way can be adopted in wafer cleaning process, and needed process cavity to vacuumize, water filling, drying, process cavity recharge gas to atmospheric process, technique is complicated and time consumption comparatively, production efficiency is lower, is difficult to apply in large-scale production line.
In addition for the purpose-built washing equipment adopted in common TSV cleaning and special cleaning, its cannot with the process compatible of current IC production line, only can complete the cleaning of TSV blind hole, therefore utility ratio is lower, and need to arrange the special pipeline that vacuumizes and cleaning fluid supply line in the cleaning area of clean room, production cost is higher.
Summary of the invention
The object of the present invention is to provide the cleaning method of the large depth-to-width ratio TSV blind hole of a kind of crystal column surface, to overcome the defect that above-mentioned prior art exists, the present invention adopts wafer production line existing equipment and existing cleaning fluid, production cost is lower, and multi-disc can be realized clean simultaneously, production efficiency is higher, meets the demand of large-scale production.
For achieving the above object, the present invention adopts following technical scheme:
A cleaning method for the large depth-to-width ratio TSV blind hole of crystal column surface, comprises the following steps:
Step one: get some wafers and put into ultrasonic Slicer, carry out ultrasonic pad while utilizing deionized water rinsing;
Step 2: ultrasonic pad terminates directly to be taken out from ultrasonic Slicer by wafer afterwards, then wafer is put into pure IPA cleaning fluid and cleans;
Step 3: wafer cleaned in step 2 taking-up is placed in pure EKC cleaning fluid and cleans;
Step 4: wafer cleaned in step 3 taking-up is placed in pure IPA cleaning fluid and cleans;
Step 5: wafer cleaned in step 4 taking-up is placed in de-ionized water tank and rinses;
Step 6: wafer flushed in step 5 is dried.
Further, in step one, in ultrasonic pad process, the rotating speed of wafer is 1300 ~ 1700rpm, and ultrasonic power is 20 ~ 40W, and scavenging period is 3 ~ 7min.
Further, in step 2, cleaning temperature is room temperature, and scavenging period is 3 ~ 7min.
Further, in step 3, cleaning temperature is 70 DEG C, and scavenging period is 20 ~ 40min.
Further, in step 4, cleaning temperature is room temperature, and scavenging period is 5 ~ 15min.
Further, in tank, CO is passed in the process of rinsing in step 5
2.
Further, rinsing temperature in step 5 is room temperature, and flush cycle is 10 ~ 15 times.
Further, dried in step 6 by drier to wafer, the drying time is 5 ~ 15min.
A cleaning method for the large depth-to-width ratio TSV blind hole of crystal column surface, the blind hole depth of crystal column surface is 100 μm, and blind hole diameter is 30 μm; Comprise the following steps:
Step one: wafer is placed in groove type ultrasonic Slicer, carries out 5 minutes pads while deionized water rinsing, and wafer rotating speed is 1500rpm, and ultrasonic power is 30W;
Step 2: after ultrasonic pad terminates when not drying, takes out wafer and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 5 minutes;
Step 3: wafer cleaned in step 2 is taken out and is placed in the pure EKC rinse bath of 70 DEG C, carry out EKC and clean 30 minutes;
Step 4: wafer cleaned in step 3 is taken out and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 10 minutes;
Step 5: wafer cleaned in step 4 is taken out and is placed in the de-ionized water tank of room temperature, adopt deionized water rinsing, pass into CO simultaneously in de-ionized water tank
2, flush cycle is 10 times;
Step 6: wafer flushed in step 5 is put into drier and dries, the drying time is 10min.
Compared with prior art, the present invention has following useful technique effect:
The equipment that the cleaning method that the present invention adopts is used and liquid comprise: ultrasonic Slicer, IPA rinse bath and IPA cleaning fluid, EKC rinse bath and EKC cleaning fluid, above equipment and cleaning fluid all use in the BEOL technique of wafer production line, cleaning equipment and cleaning fluid completely can compatible BEOL techniques, therefore clean cost lower, technique is simple; In the process that the present invention proposes, the mode that each step all can adopt more wafers to clean simultaneously completes, and compared with common TSV cleaning, can increase substantially cleaning efficiency; Utilize this invention can realize cleaning liquid to the abundant infiltration in different form ratios TSV hole, thus realize sidewall polymer and clean fully contacting of liquid, reach cleaning performance.
In addition, adopt this invention to clean large depth-to-width ratio TSV blind hole, can realize the cleaning completely of hole inner top, middle part and bottom, testing result shows that in hole, polymer removal effect is obvious, C and O constituent content is close to zero.
Accompanying drawing explanation
Fig. 1 is TSV blind hole cleaning method flow chart of the present invention;
Fig. 2 is TSV blind hole cleaning method flow chart used at present.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail:
See Fig. 1, the cleaning method of the large depth-to-width ratio TSV blind hole of a kind of crystal column surface, comprises the following steps:
Step one: some wafers are put into groove type ultrasonic Slicer, carry out deionized water (room temperature) and rinse, and apply ultrasonicly to carry out pad, wafer rotating speed is 1300-1700rpm, and ultrasonic power is 20-40W, and scavenging period is 3-7min;
Step 2: after completing pad process, do not carry out drying process, and put in pure IPA cleaning fluid (UL level, purity >=99.9%) after directly being taken out from Slicer by wafer, IPA solution temperature is room temperature, and scavenging period is 3-7min;
Step 3: wafer is taken out from IPA cleaning fluid, be positioned in pure EKC cleaning fluid (TM), EKC solution temperature is 70 DEG C, and scavenging period is 20-40min;
Step 4: wafer is taken out from EKC cleaning fluid, be again positioned in pure IPA cleaning fluid (UL level, purity >=99.9%), IPA solution temperature is room temperature, and scavenging period is 5-15min;
Step 5: taken out from IPA cleaning fluid by wafer, is placed in deionized water (room temperature) groove and rinses, and pass into CO in the sink
2, flush cycle is 10-15 time;
Step 6: wafer flushed for step 5 is put into drier and dries, the drying time is 5-15min.
Below in conjunction with embodiment, implementation process of the present invention is described in further detail:
Embodiment 1:
The blind round hole degree of depth of crystal column surface is 100 μm, and blind hole diameter is 30 μm;
Step one: wafer is placed in groove type ultrasonic Slicer, carries out 5 minutes pads while deionized water rinsing, and rotating speed is 1500rpm, and ultrasonic power is 30W;
Step 2: after ultrasonic pad terminates when not drying, takes out wafer and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 5 minutes;
Step 3: wafer cleaned in step 2 is taken out and is placed in the pure EKC rinse bath of 70 DEG C, carry out EKC and clean 30 minutes;
Step 4: wafer cleaned in step 3 is taken out and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 10 minutes;
Step 5: wafer cleaned in step 4 is taken out and is placed in the de-ionized water tank of room temperature, adopt deionized water rinsing, pass into CO simultaneously in de-ionized water tank
2, flush cycle is 10 times;
Step 6: wafer flushed in step 5 is put into drier and dries, the drying time is 10min.
Embodiment 2:
The blind round hole degree of depth of crystal column surface is 80 μm, and blind hole diameter is 20 μm;
Step one: wafer is placed in groove type ultrasonic Slicer, carries out 5 minutes pads while deionized water rinsing, and rotating speed is 1500rpm, and ultrasonic power is 30W;
Step 2: after ultrasonic pad terminates when not drying, takes out wafer and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 5 minutes;
Step 3: wafer cleaned in step 2 is taken out and is placed in the pure EKC rinse bath of 70 DEG C, carry out EKC and clean 30 minutes;
Step 4: wafer cleaned in step 3 is taken out and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 10 minutes;
Step 5: wafer cleaned in step 4 is taken out and is placed in the de-ionized water tank of room temperature, adopt deionized water rinsing, pass into CO simultaneously in de-ionized water tank
2, flush cycle is 10 times;
Step 6: wafer flushed in step 5 is put into drier and dries, the drying time is 10min.
Embodiment 3:
The blind round hole degree of depth of crystal column surface is 100 μm, and blind hole diameter is 30 μm;
Step one: wafer is placed in groove type ultrasonic Slicer, carries out 3 minutes pads while deionized water rinsing, and rotating speed is 1300rpm, and ultrasonic power is 40W;
Step 2: after ultrasonic pad terminates when not drying, takes out wafer and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 3 minutes;
Step 3: wafer cleaned in step 2 is taken out and is placed in the pure EKC rinse bath of 70 DEG C, carry out EKC and clean 40 minutes;
Step 4: wafer cleaned in step 3 is taken out and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 5 minutes;
Step 5: wafer cleaned in step 4 is taken out and is placed in the de-ionized water tank of room temperature, adopt deionized water rinsing, pass into CO simultaneously in de-ionized water tank
2, flush cycle is 15 times;
Step 6: wafer flushed in step 5 is put into drier and dries, the drying time is 5min.
Embodiment 4:
The blind round hole degree of depth of crystal column surface is 80 μm, and blind hole diameter is 20 μm;
Step one: wafer is placed in groove type ultrasonic Slicer, carries out 7 minutes pads while deionized water rinsing, and rotating speed is 1700rpm, and ultrasonic power is 20W;
Step 2: after ultrasonic pad terminates when not drying, takes out wafer and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 7 minutes;
Step 3: wafer cleaned in step 2 is taken out and is placed in the pure EKC rinse bath of 70 DEG C, carry out EKC and clean 20 minutes;
Step 4: wafer cleaned in step 3 is taken out and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 15 minutes;
Step 5: wafer cleaned in step 4 is taken out and is placed in the de-ionized water tank of room temperature, adopt deionized water rinsing, pass into CO simultaneously in de-ionized water tank
2, flush cycle is 12 times;
Step 6: wafer flushed in step 5 is put into drier and dries, the drying time is 15min.
Claims (9)
1. a cleaning method for the large depth-to-width ratio TSV blind hole of crystal column surface, is characterized in that, comprise the following steps:
Step one: get some wafers and put into ultrasonic Slicer, carry out ultrasonic pad while utilizing deionized water rinsing;
Step 2: ultrasonic pad terminates directly to be taken out from ultrasonic Slicer by wafer afterwards, then wafer is put into pure IPA cleaning fluid and cleans;
Step 3: wafer cleaned in step 2 taking-up is placed in pure EKC cleaning fluid and cleans;
Step 4: wafer cleaned in step 3 taking-up is placed in pure IPA cleaning fluid and cleans;
Step 5: wafer cleaned in step 4 taking-up is placed in de-ionized water tank and rinses;
Step 6: wafer flushed in step 5 is dried.
2. the cleaning method of the large depth-to-width ratio TSV blind hole of a kind of crystal column surface according to claim 1, is characterized in that, in step one, in ultrasonic pad process, the rotating speed of wafer is 1300 ~ 1700rpm, and ultrasonic power is 20 ~ 40W, and scavenging period is 3 ~ 7min.
3. the cleaning method of the large depth-to-width ratio TSV blind hole of a kind of crystal column surface according to claim 1, is characterized in that, in step 2, cleaning temperature is room temperature, and scavenging period is 3 ~ 7min.
4. the cleaning method of the large depth-to-width ratio TSV blind hole of a kind of crystal column surface according to claim 1, is characterized in that, in step 3, cleaning temperature is 70 DEG C, and scavenging period is 20 ~ 40min.
5. the cleaning method of the large depth-to-width ratio TSV blind hole of a kind of crystal column surface according to claim 1, is characterized in that, in step 4, cleaning temperature is room temperature, and scavenging period is 5 ~ 15min.
6. the cleaning method of the large depth-to-width ratio TSV blind hole of a kind of crystal column surface according to claim 1, is characterized in that, pass into CO in the process of rinsing in step 5 in tank
2.
7. the cleaning method of the large depth-to-width ratio TSV blind hole of a kind of crystal column surface according to claim 1, is characterized in that, rinsing temperature in step 5 is room temperature, and flush cycle is 10 ~ 15 times.
8. the cleaning method of the large depth-to-width ratio TSV blind hole of a kind of crystal column surface according to claim 1, be is characterized in that, dried in step 6 by drier to wafer, and the drying time is 5 ~ 15min.
9. a cleaning method for the large depth-to-width ratio TSV blind hole of crystal column surface, is characterized in that, the blind hole depth of crystal column surface is 100 μm, and blind hole diameter is 30 μm; Comprise the following steps:
Step one: wafer is placed in groove type ultrasonic Slicer, carries out 5 minutes pads while deionized water rinsing, and wafer rotating speed is 1500rpm, and ultrasonic power is 30W;
Step 2: after ultrasonic pad terminates when not drying, takes out wafer and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 5 minutes;
Step 3: wafer cleaned in step 2 is taken out and is placed in the pure EKC rinse bath of 70 DEG C, carry out EKC and clean 30 minutes;
Step 4: wafer cleaned in step 3 is taken out and is placed in the pure IPA rinse bath of room temperature, carry out IPA and clean 10 minutes;
Step 5: wafer cleaned in step 4 is taken out and is placed in the de-ionized water tank of room temperature, adopt deionized water rinsing, pass into CO simultaneously in de-ionized water tank
2, flush cycle is 10 times;
Step 6: wafer flushed in step 5 is put into drier and dries, the drying time is 10min.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020093928A1 (en) * | 2018-11-05 | 2020-05-14 | 北京北方华创微电子装备有限公司 | Cleaning method and cleaning apparatus |
| CN112397422A (en) * | 2020-11-19 | 2021-02-23 | 苏州尊恒半导体科技有限公司 | Wafer deep hole electroplating pretreatment wetting method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101373704A (en) * | 2007-08-21 | 2009-02-25 | 联华电子股份有限公司 | Method for cleaning semiconductor substrate |
| KR20110046953A (en) * | 2009-10-29 | 2011-05-06 | 한국기계연구원 | Fabrication of Through Silicon Via using Hybrid process |
| US20110237073A1 (en) * | 2010-03-26 | 2011-09-29 | Dao Thuy B | Method for forming a through silicon via (tsv) |
| CN102569024A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Drying method and drying equipment after grinding and cleaning TSV (Temperature Safety Valve) through hole |
| CN102738066A (en) * | 2011-04-14 | 2012-10-17 | 台湾积体电路制造股份有限公司 | Methods of forming through silicon via openings |
| CN104465498A (en) * | 2014-11-12 | 2015-03-25 | 华天科技（昆山）电子有限公司 | Method for evenly coating silicon through hole inner wall with insulation layer |
-
2015
- 2015-05-20 CN CN201510259860.1A patent/CN104900493B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101373704A (en) * | 2007-08-21 | 2009-02-25 | 联华电子股份有限公司 | Method for cleaning semiconductor substrate |
| KR20110046953A (en) * | 2009-10-29 | 2011-05-06 | 한국기계연구원 | Fabrication of Through Silicon Via using Hybrid process |
| US20110237073A1 (en) * | 2010-03-26 | 2011-09-29 | Dao Thuy B | Method for forming a through silicon via (tsv) |
| CN102569024A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Drying method and drying equipment after grinding and cleaning TSV (Temperature Safety Valve) through hole |
| CN102738066A (en) * | 2011-04-14 | 2012-10-17 | 台湾积体电路制造股份有限公司 | Methods of forming through silicon via openings |
| CN104465498A (en) * | 2014-11-12 | 2015-03-25 | 华天科技（昆山）电子有限公司 | Method for evenly coating silicon through hole inner wall with insulation layer |
Non-Patent Citations (1)
| Title |
|---|
| YING WANG,SANDRA W.GRAHAM,LAP CHAN AND SHEAVTAN LOONG: "Understanding of Via-Etch-Induced Polymer Formation and Its Removal", 《J.ELECTROCHEM.SOC.》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020093928A1 (en) * | 2018-11-05 | 2020-05-14 | 北京北方华创微电子装备有限公司 | Cleaning method and cleaning apparatus |
| CN112397422A (en) * | 2020-11-19 | 2021-02-23 | 苏州尊恒半导体科技有限公司 | Wafer deep hole electroplating pretreatment wetting method |
| CN112397422B (en) * | 2020-11-19 | 2023-08-29 | 苏州尊恒半导体科技有限公司 | Wafer deep hole electroplating pretreatment wetting method |
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Address after: 710000 No. 26 Information Avenue, Xi'an High-tech Zone, Shaanxi Province Patentee after: No. 771 Institute of The No. 9 Research Institute, CASC Address before: 710068 No. 198 Taibai South Road, Xi'an City, Shaanxi Province Patentee before: No. 771 Institute of The No. 9 Research Institute, CASC |
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Effective date of registration: 20181210 Address after: 710000 No. 26 Information Avenue, Xi'an High-tech Zone, Shaanxi Province Patentee after: Xi'an Xiyue Electronics Technology Co. Ltd. Address before: 710000 No. 26 Information Avenue, Xi'an High-tech Zone, Shaanxi Province Patentee before: No. 771 Institute of The No. 9 Research Institute, CASC |