CN104900493B - A kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface - Google Patents
A kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface Download PDFInfo
- Publication number
- CN104900493B CN104900493B CN201510259860.1A CN201510259860A CN104900493B CN 104900493 B CN104900493 B CN 104900493B CN 201510259860 A CN201510259860 A CN 201510259860A CN 104900493 B CN104900493 B CN 104900493B
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaned
- ultrasonic
- cleaning
- taken out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The invention discloses a kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface, some wafers are taken to be put into ultrasonic Slicer, using carrying out ultrasonic pad while deionized water rinsing；Ultrasonic pad directly takes out wafer after terminating from ultrasonic Slicer, and then wafer is put into pure IPA cleaning fluids and cleaned；The above-mentioned wafer cleaned is taken out to be placed in pure EKC cleaning fluids and cleaned；The above-mentioned wafer cleaned is taken out to be placed in pure IPA cleaning fluids and cleaned；The above-mentioned wafer cleaned is taken out to be placed in de-ionized water tank and rinsed；Above-mentioned flushed wafer is dried.The present invention uses wafer production line existing equipment and existing cleaning fluid, and production cost is relatively low, and can realize multi-disc while clean, and production efficiency is higher, meets the needs of large-scale production.
Description
Technical field
The invention belongs to microelectronics technology, and in particular to a kind of cleaning side of the big depth-to-width ratio TSV blind holes of crystal column surface
Method.
Background technology
After completing TSV blind holes etching using Bosch etching technics, organic polymer impurity can be produced at the madial wall of hole, is
The insulating barrier that high reliability is formed in hole removes, it is necessary to which impurity is cleaned, such as " the The Cleaning Method of document 1
Described in Which is able to keep the smmoothness of Si (100) (ISTC2008) ", high reliability
Insulating barrier needs have high-cleanness, high between the interface of substrate and insulating barrier.Current common wafer cleaning technology, is not particularly suited for
TSV blind holes are cleaned.Such as " the Particle Removal from Silicon Wafer Surface in Wet of document 2
Institute in Cleaning process (IEEE Transactions on Semiconductor Manufacturing 1993) "
State, in this method, wafer is placed in rinse bath, using cleaning fluid heated wash, can effectively remove the impurity of crystal column surface.
And cleaned for TSV blind holes, because air is difficult to discharge in hole, cause cleaning fluid to be difficult to infiltrate, therefore the institute of document 2
The conventional crystal column surface cleaning method stated can not be applied.Generally use vacuumizes the technique side being combined with ultrasonic vibration at present
Method.As described in document 3 " Wet Silicon Etch Process for TSV Reveal (ECTC 2014) ".In the method
In, the wafer for etching completion is put into closed process cavity with monolithic form first, after cavity is vacuumized, using spray side
Deionized water is sprayed at crystal column surface by formula so that deionized water is injected in hole.The wafer for completing deionized water injection is infiltrated
Enter in cleaning fluid, and apply ultrasonic vibration in rinse bath so that the displacement in hole between deionized water and cleaning fluid, realize
Effective displacement of the cleaning fluid to TSV blind holes, finally the wafer for completing cleaning is dried.The method needs to use TSV blind holes special
Cleaning equipment, it is only capable of using monolithic cleaning way during wafer cleaning, and needs to complete process cavity to vacuumize, water filling, get rid of
Dry, process cavity recharges gas to the process of atmospheric pressure, and technique is complex time-consuming, and production efficiency is relatively low, it is difficult to applies to advise greatly
In mould production line.
Further for the purpose-built washing equipment and special cleaning used in common TSV cleanings, it can not be with mesh
The process compatible of preceding IC production lines, it is only capable of completing the cleaning of TSV blind holes, therefore utility ratio is relatively low, and need in the clear of toilet
Washing region sets the special pipeline vacuumized and cleaning fluid supply pipe line, production cost higher.
The content of the invention
It is above-mentioned to overcome it is an object of the invention to provide a kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface
The defects of prior art is present, the present invention use wafer production line existing equipment and existing cleaning fluid, and production cost is relatively low, and energy
Enough realize multi-disc while clean, production efficiency is higher, meets the needs of large-scale production.
To reach above-mentioned purpose, the present invention adopts the following technical scheme that：
A kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface, comprises the following steps：
Step 1：Some wafers are taken to be put into ultrasonic Slicer, using carrying out ultrasonic pad while deionized water rinsing；
Step 2：Ultrasonic pad directly takes out wafer after terminating from ultrasonic Slicer, and wafer then is put into pure IPA
Cleaned in cleaning fluid；
Step 3：The wafer cleaned in step 2 is taken out to be placed in pure EKC cleaning fluids and cleaned；
Step 4：The wafer cleaned in step 3 is taken out to be placed in pure IPA cleaning fluids and cleaned；
Step 5：The wafer cleaned in step 4 is taken out to be placed in de-ionized water tank and rinsed；
Step 6：Wafer flushed in step 5 is dried.
Further, the rotating speed of wafer is 1300~1700rpm during ultrasonic pad in step 1, ultrasonic power 20
~40W, scavenging period are 3~7min.
Further, cleaning temperature is room temperature in step 2, and scavenging period is 3~7min.
Further, cleaning temperature is 70 DEG C in step 3, and scavenging period is 20~40min.
Further, cleaning temperature is room temperature in step 4, and scavenging period is 5~15min.
Further, CO is passed through into tank during being rinsed in step 52。
Further, it is room temperature that temperature is rinsed in step 5, and flush cycle is 10~15 times.
Further, wafer is dried by drier in step 6, the drying time is 5~15min.
A kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface, the blind hole depth of crystal column surface is 100 μm, blind hole
A diameter of 30 μm；Comprise the following steps：
Step 1：Wafer is placed in groove type ultrasonic Slicer, 5 minutes pads are carried out while deionized water rinsing,
Wafer rotating speed is 1500rpm, ultrasonic power 30W；
Step 2：Ultrasonic pad terminate after in the case where not drying, by wafer take out be placed into room temperature pure IPA clean
In groove, carry out IPA and clean 5 minutes；
Step 3：The wafer cleaned in step 2 is taken out and is placed into 70 DEG C of pure EKC rinse baths, it is clear to carry out EKC
Wash 30 minutes；
Step 4：The wafer cleaned in step 3 is taken out and is placed into the pure IPA rinse baths of room temperature, it is clear to carry out IPA
Wash 10 minutes；
Step 5：The wafer cleaned in step 4 is taken out and is placed into the de-ionized water tank of room temperature, using deionization
Water is rinsed, while CO is passed through into de-ionized water tank2, flush cycle is 10 times；
Step 6：Wafer flushed in step 5 is put into drier and dried, the drying time is 10min.
Compared with prior art, the present invention has technique effect beneficial below：
The equipment and decoction that the present invention uses used in cleaning method include：Ultrasonic Slicer, IPA rinse baths and IPA are clear
Washing lotion, EKC rinse baths and EKC cleaning fluids, above equipment and cleaning fluid use in the BEOL techniques of wafer production line, cleaning
Equipment and cleaning fluid are fully able to compatible BEOL techniques, therefore cleaning cost is relatively low, and technique is simple；Technique side proposed by the present invention
In method, each step can be completed by the way of more wafers clean simultaneously, compared with common TSV cleanings, Neng Gou great
Amplitude improves cleaning efficiency；Abundant infiltration of the cleaning decoction to different form ratios TSV holes can be achieved using the invention, so as to realize
Side wall polymer fully contacts with cleaning decoction, reaches cleaning performance.
In addition, being cleaned using the invention to big depth-to-width ratio TSV blind holes, hole inner top, middle part and bottom can be achieved
Cleaning completely, testing result shows that polymer removal effects are obvious in hole, C and O constituent contents are close to zero.
Brief description of the drawings
Fig. 1 is the TSV blind hole cleaning method flow charts of the present invention；
Fig. 2 is presently used TSV blind hole cleaning method flow charts.
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings：
Referring to Fig. 1, a kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface, comprise the following steps：
Step 1：Some wafers are put into groove type ultrasonic Slicer, deionized water (room temperature) is carried out and rinses, and are applied super
Sound carries out pad, and wafer rotating speed is 1300-1700rpm, ultrasonic power 20-40W, scavenging period 3-7min；
Step 2：After pad processing is completed, without spin-drying, and put after directly wafer is taken out from Slicer
Enter in pure IPA cleaning fluids (UL levels, purity >=99.9%), IPA solution temperatures are room temperature, scavenging period 3-7min；
Step 3：Wafer is taken out from IPA cleaning fluids, is positioned in pure EKC cleaning fluids (TM), EKC solution temperatures are
70 DEG C, scavenging period 20-40min；
Step 4：Wafer is taken out from EKC cleaning fluids, be positioned over again pure IPA cleaning fluids (UL levels, purity >=
99.9%) in, IPA solution temperatures are room temperature, scavenging period 5-15min；
Step 5：Wafer is taken out from IPA cleaning fluids, is placed in deionized water (room temperature) groove and rinses, and in the sink
It is passed through CO2, flush cycle is 10-15 times；
Step 6：The flushed wafer of step 5 is put into drier and dried, the drying time is 5-15min.
The implementation process of the present invention is described in further detail with reference to embodiment：
Embodiment 1：
The blind round hole depth of crystal column surface is 100 μm, and blind hole diameter is 30 μm；
Step 1：Wafer is placed in groove type ultrasonic Slicer, 5 minutes pads are carried out while deionized water rinsing,
Rotating speed is 1500rpm, ultrasonic power 30W；
Step 2：Ultrasonic pad terminate after in the case where not drying, by wafer take out be placed into room temperature pure IPA clean
In groove, carry out IPA and clean 5 minutes；
Step 3：The wafer cleaned in step 2 is taken out and is placed into 70 DEG C of pure EKC rinse baths, it is clear to carry out EKC
Wash 30 minutes；
Step 4：The wafer cleaned in step 3 is taken out and is placed into the pure IPA rinse baths of room temperature, it is clear to carry out IPA
Wash 10 minutes；
Step 5：The wafer cleaned in step 4 is taken out and is placed into the de-ionized water tank of room temperature, using deionization
Water is rinsed, while CO is passed through into de-ionized water tank2, flush cycle is 10 times；
Step 6：Wafer flushed in step 5 is put into drier and dried, the drying time is 10min.
Embodiment 2：
The blind round hole depth of crystal column surface is 80 μm, and blind hole diameter is 20 μm；
Step 1：Wafer is placed in groove type ultrasonic Slicer, 5 minutes pads are carried out while deionized water rinsing,
Rotating speed is 1500rpm, ultrasonic power 30W；
Step 2：Ultrasonic pad terminate after in the case where not drying, by wafer take out be placed into room temperature pure IPA clean
In groove, carry out IPA and clean 5 minutes；
Step 3：The wafer cleaned in step 2 is taken out and is placed into 70 DEG C of pure EKC rinse baths, it is clear to carry out EKC
Wash 30 minutes；
Step 4：The wafer cleaned in step 3 is taken out and is placed into the pure IPA rinse baths of room temperature, it is clear to carry out IPA
Wash 10 minutes；
Step 5：The wafer cleaned in step 4 is taken out and is placed into the de-ionized water tank of room temperature, using deionization
Water is rinsed, while CO is passed through into de-ionized water tank2, flush cycle is 10 times；
Step 6：Wafer flushed in step 5 is put into drier and dried, the drying time is 10min.
Embodiment 3：
The blind round hole depth of crystal column surface is 100 μm, and blind hole diameter is 30 μm；
Step 1：Wafer is placed in groove type ultrasonic Slicer, 3 minutes pads are carried out while deionized water rinsing,
Rotating speed is 1300rpm, ultrasonic power 40W；
Step 2：Ultrasonic pad terminate after in the case where not drying, by wafer take out be placed into room temperature pure IPA clean
In groove, carry out IPA and clean 3 minutes；
Step 3：The wafer cleaned in step 2 is taken out and is placed into 70 DEG C of pure EKC rinse baths, it is clear to carry out EKC
Wash 40 minutes；
Step 4：The wafer cleaned in step 3 is taken out and is placed into the pure IPA rinse baths of room temperature, it is clear to carry out IPA
Wash 5 minutes；
Step 5：The wafer cleaned in step 4 is taken out and is placed into the de-ionized water tank of room temperature, using deionization
Water is rinsed, while CO is passed through into de-ionized water tank2, flush cycle is 15 times；
Step 6：Wafer flushed in step 5 is put into drier and dried, the drying time is 5min.
Embodiment 4：
The blind round hole depth of crystal column surface is 80 μm, and blind hole diameter is 20 μm；
Step 1：Wafer is placed in groove type ultrasonic Slicer, 7 minutes pads are carried out while deionized water rinsing,
Rotating speed is 1700rpm, ultrasonic power 20W；
Step 2：Ultrasonic pad terminate after in the case where not drying, by wafer take out be placed into room temperature pure IPA clean
In groove, carry out IPA and clean 7 minutes；
Step 3：The wafer cleaned in step 2 is taken out and is placed into 70 DEG C of pure EKC rinse baths, it is clear to carry out EKC
Wash 20 minutes；
Step 4：The wafer cleaned in step 3 is taken out and is placed into the pure IPA rinse baths of room temperature, it is clear to carry out IPA
Wash 15 minutes；
Step 5：The wafer cleaned in step 4 is taken out and is placed into the de-ionized water tank of room temperature, using deionization
Water is rinsed, while CO is passed through into de-ionized water tank2, flush cycle is 12 times；
Step 6：Wafer flushed in step 5 is put into drier and dried, the drying time is 15min.
Claims (7)
1. a kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface, it is characterised in that comprise the following steps：
Step 1：Some wafers are taken to be put into ultrasonic Slicer, using carrying out ultrasonic pad while deionized water rinsing, ultrasound
The rotating speed of wafer is 1300~1700rpm during pad, and ultrasonic power is 20~40W, and scavenging period is 3~7min；
Step 2：Ultrasonic pad directly takes out wafer after terminating from ultrasonic Slicer, and wafer then is put into pure IPA cleans
3~7min is cleaned in liquid at room temperature；
Step 3：The wafer cleaned in step 2 is taken out to be placed in pure EKC cleaning fluids and cleaned；
Step 4：The wafer cleaned in step 3 is taken out to be placed in pure IPA cleaning fluids and cleaned；
Step 5：The wafer cleaned in step 4 is taken out to be placed in de-ionized water tank and rinsed；
Step 6：Wafer flushed in step 5 is dried.
A kind of 2. cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface according to claim 1, it is characterised in that step
Cleaning temperature is 70 DEG C in rapid three, and scavenging period is 20~40min.
A kind of 3. cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface according to claim 1, it is characterised in that step
Cleaning temperature is room temperature in rapid four, and scavenging period is 5~15min.
A kind of 4. cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface according to claim 1, it is characterised in that step
CO is passed through into tank during being rinsed in rapid five2。
A kind of 5. cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface according to claim 1, it is characterised in that step
It is room temperature that temperature is rinsed in rapid five, and flush cycle is 10~15 times.
A kind of 6. cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface according to claim 1, it is characterised in that step
Wafer is dried by drier in rapid six, the drying time is 5~15min.
7. a kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface, it is characterised in that the blind hole depth of crystal column surface is
100 μm, blind hole diameter is 30 μm；Comprise the following steps：
Step 1：Wafer is placed in groove type ultrasonic Slicer, 5 minutes pads, wafer are carried out while deionized water rinsing
Rotating speed is 1500rpm, ultrasonic power 30W；
Step 2：Ultrasonic pad terminate after in the case where not drying, wafer is taken out and is placed into the pure IPA rinse baths of room temperature
In, carry out IPA and clean 5 minutes；
Step 3：The wafer cleaned in step 2 is taken out and is placed into 70 DEG C of pure EKC rinse baths, carries out EKC cleanings 30
Minute；
Step 4：The wafer cleaned in step 3 is taken out and is placed into the pure IPA rinse baths of room temperature, carries out IPA cleanings 10
Minute；
Step 5：The wafer cleaned in step 4 is taken out and is placed into the de-ionized water tank of room temperature, is rushed using deionized water
Wash, while CO is passed through into de-ionized water tank2, flush cycle is 10 times；
Step 6：Wafer flushed in step 5 is put into drier and dried, the drying time is 10min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510259860.1A CN104900493B (en) | 2015-05-20 | 2015-05-20 | A kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510259860.1A CN104900493B (en) | 2015-05-20 | 2015-05-20 | A kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104900493A CN104900493A (en) | 2015-09-09 |
| CN104900493B true CN104900493B (en) | 2018-02-16 |
Family
ID=54033090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510259860.1A Active CN104900493B (en) | 2015-05-20 | 2015-05-20 | A kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104900493B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146073B (en) * | 2018-11-05 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Cleaning method and cleaning apparatus |
| CN112397422B (en) * | 2020-11-19 | 2023-08-29 | 苏州尊恒半导体科技有限公司 | Wafer deep hole electroplating pretreatment wetting method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101373704A (en) * | 2007-08-21 | 2009-02-25 | 联华电子股份有限公司 | Method for cleaning semiconductor substrate |
| CN102569024A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Drying method and drying equipment after grinding and cleaning TSV (Temperature Safety Valve) through hole |
| CN102738066A (en) * | 2011-04-14 | 2012-10-17 | 台湾积体电路制造股份有限公司 | Methods of forming through silicon via openings |
| CN104465498A (en) * | 2014-11-12 | 2015-03-25 | 华天科技（昆山）电子有限公司 | Method for evenly coating silicon through hole inner wall with insulation layer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101117573B1 (en) * | 2009-10-29 | 2012-02-29 | 한국기계연구원 | Fabrication Method of Through Silicon Via using Hybrid process |
| US8039386B1 (en) * | 2010-03-26 | 2011-10-18 | Freescale Semiconductor, Inc. | Method for forming a through silicon via (TSV) |
-
2015
- 2015-05-20 CN CN201510259860.1A patent/CN104900493B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101373704A (en) * | 2007-08-21 | 2009-02-25 | 联华电子股份有限公司 | Method for cleaning semiconductor substrate |
| CN102569024A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Drying method and drying equipment after grinding and cleaning TSV (Temperature Safety Valve) through hole |
| CN102738066A (en) * | 2011-04-14 | 2012-10-17 | 台湾积体电路制造股份有限公司 | Methods of forming through silicon via openings |
| CN104465498A (en) * | 2014-11-12 | 2015-03-25 | 华天科技（昆山）电子有限公司 | Method for evenly coating silicon through hole inner wall with insulation layer |
Non-Patent Citations (1)
| Title |
|---|
| Understanding of Via-Etch-Induced Polymer Formation and Its Removal;Ying Wang,Sandra W.Graham,Lap Chan and SheavTan Loong;《J.Electrochem.Soc.》;19970430;第144卷(第4期);正文第1523页左栏第4段至第1526页右栏第2段 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104900493A (en) | 2015-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102412172B (en) | Cut/ground silicon wafer surface cleaning method | |
| CN103617944B (en) | Based on photoresist interim bonding and go the method for bonding | |
| CN104900493B (en) | A kind of cleaning method of the big depth-to-width ratio TSV blind holes of crystal column surface | |
| CN105321797A (en) | Method for cleaning silicon wafer | |
| WO2007143476A3 (en) | Apparatus and method for single substrate processing | |
| CN102543683B (en) | Reprocessing method for photoetching process | |
| CN103972045B (en) | The manufacturing method of semiconductor manufacturing facility and semiconductor devices | |
| US7011715B2 (en) | Rotational thermophoretic drying | |
| CN105668509B (en) | A kind of method for etching micron silicon hole | |
| CN110508537A (en) | Hydrojet efficient appliances and method in a kind of corrosion cleaning of improvement large-sized wafer | |
| JP2010508145A5 (en) | ||
| CN107658246A (en) | A kind of solar silicon wafers cleaning | |
| WO2010120685A8 (en) | Scrubber clean before oxide chemical mechanical polish (cmp) for reduced microscratches and improved yields | |
| CN112588692A (en) | Ultra-thin wafer belt cleaning device of high hydrophobicity | |
| CN110190025A (en) | A kind of etching method for forming through hole of single layer silicon substrates | |
| TWI470692B (en) | Method for cleaning chamber of etching machine | |
| CN201611648U (en) | Wet etching equipment | |
| WO2012030499A2 (en) | Workpiece wetting and cleaning | |
| JP4031613B2 (en) | Substrate cleaning method and substrate cleaning apparatus | |
| CN105483833A (en) | Dislocation etching method for aluminum nitride single crystal | |
| CN103736689A (en) | Silicon wafer cleaning method | |
| CN105226049B (en) | The production method of mask assembly and interconnection layer for interconnection layer structure | |
| CN105097607B (en) | A kind of reaction chamber and its cleaning method | |
| CN109326538A (en) | A kind of black silicon making herbs into wool rinse bath of wet process, making herbs into wool board and the black silicon etching method of wet process | |
| JP7373492B2 (en) | Substrate cleaning method and cleaning device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 710000 No. 26 Information Avenue, Xi'an High-tech Zone, Shaanxi Province Patentee after: No. 771 Institute of The No. 9 Research Institute, CASC Address before: 710068 No. 198 Taibai South Road, Xi'an City, Shaanxi Province Patentee before: No. 771 Institute of The No. 9 Research Institute, CASC |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181210 Address after: 710000 No. 26 Information Avenue, Xi'an High-tech Zone, Shaanxi Province Patentee after: Xi'an Xiyue Electronics Technology Co. Ltd. Address before: 710000 No. 26 Information Avenue, Xi'an High-tech Zone, Shaanxi Province Patentee before: No. 771 Institute of The No. 9 Research Institute, CASC |