CN104898755B - A kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection - Google Patents
A kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection Download PDFInfo
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- CN104898755B CN104898755B CN201510317015.5A CN201510317015A CN104898755B CN 104898755 B CN104898755 B CN 104898755B CN 201510317015 A CN201510317015 A CN 201510317015A CN 104898755 B CN104898755 B CN 104898755B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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Abstract
The invention discloses a kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection; it is by DC source S; the control circuit being connected with DC source S-phase; the temperature-compensation circuit being connected with control circuit; the photoconductive resistance CDS being connected with temperature-compensation circuit; the anti-phase conditioned circuit of precision between concatenation temperature-compensation circuit and photoconductive resistance CDS; the beam excitation formula logic amplifying circuit being connected with the negative pole of DC source S, and the virtual protection emitter-base bandgap grading manifold type amplifying circuit composition being connected with beam excitation formula logic amplifying circuit；It is characterized in that, between accurate anti-phase conditioned circuit and beam excitation formula logic amplifying circuit, be additionally provided with constant current protection circuit；The present invention is provided with constant current protection circuit, and the operating current of the present invention can be locked by it, so that the operating current of the present invention maintains in certain scope, it is to avoid affect the power supply performance of the present invention because of current fluctuation。
Description
Technical field
The present invention relates to a kind of power supply, specifically refer to a kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection。
Background technology
At present; battery manufacturer is typically necessary after having made battery protection circuit whether detect the various functions of this battery protection circuit with bipolar power supply up to standard, namely utilize bipolar power supply quickly realize the overvoltage to battery protection circuit, under-voltage, cross the quickly calibrated of stream and test。When so-called bipolar power supply refers to this corona discharge, the electric current of its power source internal is to flow to positive pole from negative pole, and the electric current of its power source internal is to flow to negative pole (when its internal electric current of traditional common power all can only flow to positive pole from negative pole, and can not flow to negative pole from positive pole) from positive pole during to this power source charges。But, its operating current of the bipolar power supply sold on the market at present is susceptible to fluctuation, and its power supply performance can be made unstable。The negative effect how effectively overcoming current fluctuation to bring, is people's difficult problems of being badly in need of solving。
Summary of the invention
It is an object of the invention to overcome its operating current of current bipolar power supply to be susceptible to fluctuation, the defect that its power supply performance is unstable can be made, it is provided that a kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection。
The purpose of the present invention is achieved through the following technical solutions: a kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection, it is by DC source S, the control circuit being connected with DC source S-phase, the temperature-compensation circuit being connected with control circuit, the photoconductive resistance CDS being connected with temperature-compensation circuit, the anti-phase conditioned circuit of precision between concatenation temperature-compensation circuit and photoconductive resistance CDS, the beam excitation formula logic amplifying circuit being connected with the negative pole of DC source S, the virtual protection emitter-base bandgap grading manifold type amplifying circuit being connected with beam excitation formula logic amplifying circuit, and it is arranged on the constant current protection circuit composition between accurate anti-phase conditioned circuit and beam excitation formula logic amplifying circuit。
Further, described constant current protection electricity route protection chip U1, audion Q7, audion Q8, it is serially connected in the diode D8 between COMP pin and the VREF pin of protection chip U1, P pole is connected with the RT pin of protection chip U1, the diode D7 that N pole is then connected with the FB pin of protection chip U1 after resistance R28, one end is connected with the CS pin of protection chip U1, the resistance R29 of other end ground connection, one end is connected with the DVR pin of protection chip U1, the resistance R24 that the other end is then connected with the base stage of audion Q7, one end is connected with the colelctor electrode of audion Q7, the resistance R26 that the other end is then connected with the colelctor electrode of audion Q8 after resistance R27, one end is connected with the emitter stage of audion Q8, the resistance R25 of other end ground connection, and positive pole is connected with the emitter stage of audion Q8, the polar capacitor C12 composition that negative pole is then connected with beam excitation formula logic amplifying circuit；The N pole of described diode D7 is connected with the anti-phase conditioned circuit of precision；The base stage of audion Q8 is connected with the junction point of resistance R27 and resistance R26, and the grounded emitter of audion Q7；The VREF pin of described protection chip U1 is connected with its VCC pin, its GND pin ground connection。
The anti-phase conditioned circuit of described precision is by diode D1, LMC6062 type power amplifier P2, one end is connected with the P pole of diode D1, the resistance R8 that the other end is connected with the electrode input end of LMC6062 type power amplifier P2, one end is connected with the N pole of temperature-compensation circuit and diode D7 respectively, the potentiometer R9 that the other end is connected with the outfan of LM4431 reference circuits after being connected with the N pole of diode D1 again, and one end is connected with the electrode input end of LMC6062 type power amplifier P2, the resistance R10 composition that the other end is connected with the outfan of LMC6062 type power amplifier P2 after photoconductive resistance CDS；The negative input of described LMC6062 type power amplifier P2 is connected with the control end of potentiometer R9, and its outfan is also connected with the input of LM4431 reference circuits。
Described beam excitation formula logic amplifying circuit is mainly by power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P3, positive pole is the polar capacitor C5 of ground connection after optical diode D2, one end is connected with the positive pole of polar capacitor C5, the other end is the resistance R11 of ground connection after diode D3, positive pole is connected with the junction point of resistance R11 and diode D3, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P3, it is serially connected in the resistance R13 between negative input and the outfan of power amplifier P3, one end is connected with the outfan of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the outfan of NAND gate IC2, the electric capacity C6 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R15 composition that the other end is connected with the negative input of NAND gate IC2；The electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P3, and its outfan is connected with the electrode input end of NAND gate IC2；The electrode input end of NAND gate IC3 is connected with the outfan of power amplifier P3, and the electrode input end of power amplifier P3 is connected with the negative pole of DC source S, and the outfan of power amplifier P3 is then connected with the negative pole of polar capacitor C12。
Described virtual protection emitter-base bandgap grading manifold type amplifying circuit is by audion Q5, audion Q6, power amplifier P4, power amplifier P5, it is serially connected in the resistance R17 between negative input and the outfan of power amplifier P4, it is serially connected in the polar capacitor C10 between electrode input end and the outfan of power amplifier P5, it is serially connected in the resistance R16 between the electrode input end of power amplifier P4 and the colelctor electrode of audion Q5, it is serially connected in the resistance R18 between the colelctor electrode of audion Q5 and the base stage of audion Q6, with the resistance R18 electric capacity C9 being in parallel, negative pole is connected with the electrode input end of power amplifier P4, the polar capacitor C8 that positive pole is connected with the emitter stage of audion Q5 after resistance R19, it is serially connected in the resistance R20 between the base stage of audion Q6 and the positive pole of polar capacitor C8, positive pole is connected with the emitter stage of audion Q6, negative pole is sequentially through the Zener diode D4 electric capacity C11 being connected with the outfan of power amplifier P4 after resistance R21, P pole is connected with the outfan of power amplifier P5, N pole is through the resistance R23 diode D5 being connected with the junction point of Zener diode D4 with resistance R21 after resistance R22, and P pole is connected with the negative pole of electric capacity C11, the Zener diode D6 composition that N pole is connected with the junction point of diode D5 with resistance R23；The base stage of described audion Q5 is connected with the positive pole of polar capacitor C8, and its emitter stage is connected with the emitter stage of audion Q6, and its colelctor electrode is connected with the negative input of power amplifier P4；The colelctor electrode of audion Q6 is connected with the negative input of power amplifier P5, and the electrode input end of power amplifier P5 is connected with the outfan of power amplifier P4；The described positive pole of polar capacitor C8 is connected with the outfan of NAND gate IC3, and the junction point of resistance R23 and resistance R22 is then connected with the junction point of photoconductive resistance CDS with resistance R10。
Described control circuit is by audion Q1, audion Q2, it is serially connected in the resistance R1 between the colelctor electrode of audion Q1 and the colelctor electrode of audion Q2, it is serially connected in the RC filter circuit between the emitter stage of audion Q1 and the negative pole of DC source S, it is serially connected in the resistance R2 between the base stage of audion Q1 and the negative pole of DC source S and the resistance R5 composition in parallel with DC source S-phase；The emitter stage of described audion Q2 is connected with the positive pole of DC source S, and the base stage of audion Q2 is also connected with the colelctor electrode of audion Q1。
Described temperature-compensation circuit is by audion Q3, audion Q4, power amplifier P1, it is serially connected in the resistance R4 between the colelctor electrode of audion Q3 and the colelctor electrode of audion Q2, it is serially connected in the electric capacity C2 between electrode input end and the outfan of power amplifier P1, it is serially connected in the electric capacity C3 between negative input and the outfan of power amplifier P1, negative pole is connected with the emitter stage of audion Q4, the electric capacity C4 that positive pole is connected with the N pole of diode D1, one end is connected with the negative pole of electric capacity C4, the resistance R6 that the other end is connected with the P pole of diode D1, and one end is connected with the outfan of power amplifier P1, the resistance R7 composition that the other end is connected with the N pole of diode D7；The electrode input end of described power amplifier P1 is connected with the colelctor electrode of audion Q4, and its negative input is connected with the emitter stage of audion Q3；The colelctor electrode of described audion Q4 is connected with the colelctor electrode of audion Q2, its base earth；The base stage of audion Q3 is connected with the positive pole of DC source S。
Described RC filtered electrical routing resistance R3, and form with the resistance R3 electric capacity C1 being in parallel。For guaranteeing result of use, described electric capacity C2, electric capacity C3 and electric capacity C4 is polar capacitor, and described protection chip U1 is AP3843CP integrated circuit。
The present invention compared with prior art, has the following advantages and beneficial effect:
(1) overall structure of the present invention is simple, and it makes and very easy to use。
(2) present invention can adjust output current value automatically according to the variations in temperature of external environment condition, so that it is guaranteed that its stable performance。
(3) National Semiconductor is produced by the present invention LM4431 reference circuits and LMC6062 type power amplifier are combined together to form accurate anti-phase conditioned circuit, therefore can significantly increase the range of current output of the present invention。
(4) present invention is provided with constant current protection circuit, and the operating current of the present invention can be locked by it, so that the operating current of the present invention maintains in certain scope, it is to avoid affect the power supply performance of the present invention because of current fluctuation。
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention。
Fig. 2 is the structural representation of the virtual protection emitter-base bandgap grading manifold type amplifying circuit of the present invention。
Fig. 3 is the constant current protection electrical block diagram of the present invention。
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited to this。
As shown in Figure 1, the present invention is by DC source S, the control circuit being connected with DC source S-phase, the temperature-compensation circuit being connected with control circuit, the photoconductive resistance CDS being connected with temperature-compensation circuit, the anti-phase conditioned circuit of precision between concatenation temperature-compensation circuit and photoconductive resistance CDS, the beam excitation formula logic amplifying circuit being connected with the negative pole of DC source S, the virtual protection emitter-base bandgap grading manifold type amplifying circuit being connected with beam excitation formula logic amplifying circuit, and it is arranged on the constant current protection circuit composition between accurate anti-phase conditioned circuit and beam excitation formula logic amplifying circuit。
This accurate anti-phase conditioned circuit is made up of diode D1, LMC6062 type power amplifier P2, resistance R8, potentiometer R9, resistance R10 and LM4431 reference circuits。Wherein, LMC6062 type power amplifier P2 and LM4431 reference circuits are National Semiconductor's production。During connection, one end of resistance R8 is connected with the P pole of diode D1, its other end is connected with the electrode input end of LMC6062 type power amplifier P2；One end of potentiometer R9 protects that circuit is connected, the other end is connected with the outfan of LM4431 reference circuits after being connected with the N pole of diode D1 more respectively with temperature-compensation circuit and constant current；One end of resistance R10 is connected with the electrode input end of LMC6062 type power amplifier P2, the other end is connected with the outfan of LMC6062 type power amplifier P2 after photoconductive resistance CDS。
Simultaneously, the negative input of LMC6062 type power amplifier P2 needs to be connected with the control end of potentiometer R9, its outfan is then also connected with the input of LM4431 reference circuits, to guarantee that potentiometer R9, LM4431 reference circuits and LMC6062 type power amplifier P2 form an electric loop。For guaranteeing operational effect, the junction point ground connection of resistance R10 and photoconductive resistance CDS, and the electrode input end of LMC6062 type power amplifier P2 also needs to the DC voltage of external 15V。
Described control circuit is made up of audion Q1, audion Q2, resistance R1, resistance R2, resistance R5 and RC filter circuit。During connection, resistance R1 is serially connected between the colelctor electrode of audion Q1 and the colelctor electrode of audion Q2, and RC filter circuit is then serially connected between the emitter stage of audion Q1 and the negative pole of DC source S。Resistance R2 is serially connected between the base stage of audion Q1 and the negative pole of DC source S, and resistance R5 is then in parallel with DC source S-phase。
Meanwhile, the emitter stage of audion Q2 is connected with the positive pole of DC source S, and its base stage is also connected with the colelctor electrode of audion Q1。For guaranteeing operational effect, the resistance of resistance R1, resistance R2, resistance R3 and resistance R5 is 10K Ω。RC filtered electrical routing resistance R3 in the application, and form with the resistance R3 electric capacity C1 being in parallel。
Power back-off when temperature-compensation circuit is for ambient temperature change, it is by audion Q3, audion Q4, power amplifier P1, it is serially connected in the resistance R4 between the colelctor electrode of audion Q3 and the colelctor electrode of audion Q2, it is serially connected in the electric capacity C2 between electrode input end and the outfan of power amplifier P1, it is serially connected in the electric capacity C3 between negative input and the outfan of power amplifier P1, negative pole is connected with the emitter stage of audion Q4, the electric capacity C4 that positive pole is connected with the N pole of diode D1, one end is connected with the negative pole of electric capacity C4, the resistance R6 that the other end is then connected with the P pole of diode D1, and one end is connected with the outfan of power amplifier P1, the other end protects the resistance R7 that the junction point of circuit is connected to form with potentiometer R9 with constant current。That is, the input of power amplifier P1 is connected through resistance R7 N pole with diode D1 after potentiometer R9。
The electrode input end of power amplifier P1 is connected with the colelctor electrode of audion Q4, and its negative input is also connected with the emitter stage of audion Q3。And the colelctor electrode of audion Q4 is also connected with the colelctor electrode of audion Q2, and its base earth。For guaranteeing result of use, described electric capacity C2, electric capacity C3 and electric capacity C4 all preferentially adopts polar capacitor to realize。
Described beam excitation formula logic amplifying circuit is then main by power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P3, positive pole is the polar capacitor C5 of ground connection after optical diode D2, one end is connected with the positive pole of polar capacitor C5, the other end is the resistance R11 of ground connection after diode D3, positive pole is connected with the junction point of resistance R11 and diode D3, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P3, it is serially connected in the resistance R13 between negative input and the outfan of power amplifier P3, one end is connected with the outfan of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the outfan of NAND gate IC2, the electric capacity C6 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R15 composition that the other end is connected with the negative input of NAND gate IC2。
Meanwhile, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P3, and its outfan is connected with the electrode input end of NAND gate IC2；The electrode input end of NAND gate IC3 is connected with the outfan of power amplifier P3, and the electrode input end of power amplifier P3 is connected with the negative pole of DC source S, and the outfan of power amplifier P3 then protects circuit to be connected with constant current。
The structure of described virtual protection emitter-base bandgap grading manifold type amplifying circuit is as shown in Figure 2, namely it is by audion Q5, audion Q6, power amplifier P4, power amplifier P5, it is serially connected in the resistance R17 between negative input and the outfan of power amplifier P4, it is serially connected in the polar capacitor C10 between electrode input end and the outfan of power amplifier P5, it is serially connected in the resistance R16 between the electrode input end of power amplifier P4 and the colelctor electrode of audion Q5, it is serially connected in the resistance R18 between the colelctor electrode of audion Q5 and the base stage of audion Q6, with the resistance R18 electric capacity C9 being in parallel, negative pole is connected with the electrode input end of power amplifier P4, the polar capacitor C8 that positive pole is connected with the emitter stage of audion Q5 after resistance R19, it is serially connected in the resistance R20 between the base stage of audion Q6 and the positive pole of polar capacitor C8, positive pole is connected with the emitter stage of audion Q6, negative pole is sequentially through the Zener diode D4 electric capacity C11 being connected with the outfan of power amplifier P4 after resistance R21, P pole is connected with the outfan of power amplifier P5, N pole is through the resistance R23 diode D5 being connected with the junction point of Zener diode D4 with resistance R21 after resistance R22, and P pole is connected with the negative pole of electric capacity C11, the Zener diode D6 composition that N pole is connected with the junction point of diode D5 with resistance R23。
Meanwhile, the base stage of described audion Q5 is connected with the positive pole of polar capacitor C8, and its emitter stage is connected with the emitter stage of audion Q6, and its colelctor electrode is connected with the negative input of power amplifier P4；The colelctor electrode of audion Q6 is connected with the negative input of power amplifier P5, and the electrode input end of power amplifier P5 is connected with the outfan of power amplifier P4。
When connecting, the positive pole of described polar capacitor C8 to be connected with the outfan of NAND gate IC3, and the junction point of resistance R23 and resistance R22 is then connected with the junction point of photoconductive resistance CDS with resistance R10。
The structure of this constant current protection circuit is as shown in Figure 3; it includes protection chip U1; audion Q7; audion Q8; it is serially connected in the diode D7 that diode D8, P pole is connected, N pole is then connected with the FB pin of protection chip U1 after resistance R28 between COMP pin and the VREF pin of protection chip U1 with the RT pin of protection chip U1。Wherein, resistance R28 is constant current detection resistance; pressure drop thereon feeds back to the FB pin of protection chip U1; protection chip U1 then compares according to the reference voltage that the height of this feedback voltage is internal with it; thus adjusting the pulse duty factor that its DVR pin exports, the purpose of constant current thus then can be reached。
In order to reach better effect, this constant current protection circuit also includes one end and is connected with the CS pin of protection chip U1, the resistance R29 of other end ground connection, one end is connected with the DVR pin of protection chip U1, the resistance R24 that the other end is then connected with the base stage of audion Q7, one end is connected with the colelctor electrode of audion Q7, the resistance R26 that the other end is then connected with the colelctor electrode of audion Q8 after resistance R27, one end is connected with the emitter stage of audion Q8, the resistance R25 of other end ground connection, and positive pole is connected with the emitter stage of audion Q8, the polar capacitor C12 that negative pole is then connected with the outfan of power amplifier P3。
The N pole of diode D7 is connected with the junction point of resistance R7 and potentiometer R9；The base stage of audion Q8 is connected with the junction point of resistance R27 and resistance R26, and the grounded emitter of audion Q7；The VREF pin of described protection chip U1 is connected with its VCC pin, its GND pin ground connection。In order to reach better protected effect, this protection chip U1 is preferably AP3843CP integrated circuit and realizes。
As it has been described above, the present invention just can be realized preferably。
Claims (7)
1. the emitter-base bandgap grading manifold type bias current sources based on constant current protection; it is by DC source S; the control circuit being connected with DC source S-phase; the temperature-compensation circuit being connected with control circuit; the photoconductive resistance CDS being connected with temperature-compensation circuit; the anti-phase conditioned circuit of precision between concatenation temperature-compensation circuit and photoconductive resistance CDS; the beam excitation formula logic amplifying circuit being connected with the negative pole of DC source S, and the virtual protection emitter-base bandgap grading manifold type amplifying circuit composition being connected with beam excitation formula logic amplifying circuit；It is characterized in that, between accurate anti-phase conditioned circuit and beam excitation formula logic amplifying circuit, be additionally provided with constant current protection circuit；Described constant current protection electricity route protection chip U1, audion Q7, audion Q8, it is serially connected in the diode D8 between COMP pin and the VREF pin of protection chip U1, P pole is connected with the RT pin of protection chip U1, the diode D7 that N pole is then connected with the FB pin of protection chip U1 after resistance R28, one end is connected with the CS pin of protection chip U1, the resistance R29 of other end ground connection, one end is connected with the DVR pin of protection chip U1, the resistance R24 that the other end is then connected with the base stage of audion Q7, one end is connected with the colelctor electrode of audion Q7, the resistance R26 that the other end is then connected with the colelctor electrode of audion Q8 after resistance R27, one end is connected with the emitter stage of audion Q8, the resistance R25 of other end ground connection, and positive pole is connected with the emitter stage of audion Q8, the polar capacitor C12 composition that negative pole is then connected with beam excitation formula logic amplifying circuit；The N pole of described diode D7 is connected with the anti-phase conditioned circuit of precision；The base stage of audion Q8 is connected with the junction point of resistance R27 and resistance R26, and the grounded emitter of audion Q7；The VREF pin of described protection chip U1 is connected with its VCC pin, its GND pin ground connection。
2. a kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection according to claim 1, it is characterized in that, the anti-phase conditioned circuit of described precision is by diode D1, LMC6062 type power amplifier P2, one end is connected with the P pole of diode D1, the resistance R8 that the other end is connected with the electrode input end of LMC6062 type power amplifier P2, one end is connected with the N pole of temperature-compensation circuit and diode D7 respectively, the potentiometer R9 that the other end is connected with the outfan of LM4431 reference circuits after being connected with the N pole of diode D1 again, and one end is connected with the electrode input end of LMC6062 type power amplifier P2, the resistance R10 composition that the other end is connected with the outfan of LMC6062 type power amplifier P2 after photoconductive resistance CDS；The negative input of described LMC6062 type power amplifier P2 is connected with the control end of potentiometer R9, and its outfan is also connected with the input of LM4431 reference circuits；
Described beam excitation formula logic amplifying circuit is mainly by power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P3, positive pole is the polar capacitor C5 of ground connection after optical diode D2, one end is connected with the positive pole of polar capacitor C5, the other end is the resistance R11 of ground connection after diode D3, positive pole is connected with the junction point of resistance R11 and diode D3, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P3, it is serially connected in the resistance R13 between negative input and the outfan of power amplifier P3, one end is connected with the outfan of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the outfan of NAND gate IC2, the electric capacity C6 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R15 composition that the other end is connected with the negative input of NAND gate IC2；The electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P3, and its outfan is connected with the electrode input end of NAND gate IC2；The electrode input end of NAND gate IC3 is connected with the outfan of power amplifier P3, and the electrode input end of power amplifier P3 is connected with the negative pole of DC source S, and the outfan of power amplifier P3 is then connected with the negative pole of polar capacitor C12；
Described virtual protection emitter-base bandgap grading manifold type amplifying circuit is by audion Q5, audion Q6, power amplifier P4, power amplifier P5, it is serially connected in the resistance R17 between negative input and the outfan of power amplifier P4, it is serially connected in the polar capacitor C10 between electrode input end and the outfan of power amplifier P5, it is serially connected in the resistance R16 between the electrode input end of power amplifier P4 and the colelctor electrode of audion Q5, it is serially connected in the resistance R18 between the colelctor electrode of audion Q5 and the base stage of audion Q6, with the resistance R18 electric capacity C9 being in parallel, negative pole is connected with the electrode input end of power amplifier P4, the polar capacitor C8 that positive pole is connected with the emitter stage of audion Q5 after resistance R19, it is serially connected in the resistance R20 between the base stage of audion Q6 and the positive pole of polar capacitor C8, positive pole is connected with the emitter stage of audion Q6, negative pole is sequentially through the Zener diode D4 electric capacity C11 being connected with the outfan of power amplifier P4 after resistance R21, P pole is connected with the outfan of power amplifier P5, N pole is through the resistance R23 diode D5 being connected with the junction point of Zener diode D4 with resistance R21 after resistance R22, and P pole is connected with the negative pole of electric capacity C11, the Zener diode D6 composition that N pole is connected with the junction point of diode D5 with resistance R23；The base stage of described audion Q5 is connected with the positive pole of polar capacitor C8, and its emitter stage is connected with the emitter stage of audion Q6, and its colelctor electrode is connected with the negative input of power amplifier P4；The colelctor electrode of audion Q6 is connected with the negative input of power amplifier P5, and the electrode input end of power amplifier P5 is connected with the outfan of power amplifier P4；The described positive pole of polar capacitor C8 is connected with the outfan of NAND gate IC3, and the junction point of resistance R23 and resistance R22 is then connected with the junction point of photoconductive resistance CDS with resistance R10。
3. a kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection according to claim 2; it is characterized in that; described control circuit is by audion Q1; audion Q2; it is serially connected in the resistance R1 between the colelctor electrode of audion Q1 and the colelctor electrode of audion Q2; it is serially connected in the RC filter circuit between the emitter stage of audion Q1 and the negative pole of DC source S, is serially connected in the resistance R2 between the base stage of audion Q1 and the negative pole of DC source S and the resistance R5 composition in parallel with DC source S-phase；The emitter stage of described audion Q2 is connected with the positive pole of DC source S, and the base stage of audion Q2 is also connected with the colelctor electrode of audion Q1。
4. a kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection according to claim 3, it is characterized in that, described temperature-compensation circuit is by audion Q3, audion Q4, power amplifier P1, it is serially connected in the resistance R4 between the colelctor electrode of audion Q3 and the colelctor electrode of audion Q2, it is serially connected in the electric capacity C2 between electrode input end and the outfan of power amplifier P1, it is serially connected in the electric capacity C3 between negative input and the outfan of power amplifier P1, negative pole is connected with the emitter stage of audion Q4, the electric capacity C4 that positive pole is connected with the N pole of diode D1, one end is connected with the negative pole of electric capacity C4, the resistance R6 that the other end is connected with the P pole of diode D1, and one end is connected with the outfan of power amplifier P1, the resistance R7 composition that the other end is connected with the N pole of diode D7；The electrode input end of described power amplifier P1 is connected with the colelctor electrode of audion Q4, and its negative input is connected with the emitter stage of audion Q3；The colelctor electrode of described audion Q4 is connected with the colelctor electrode of audion Q2, its base earth；The base stage of audion Q3 is connected with the positive pole of DC source S。
5. a kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection according to claim 4, it is characterised in that described RC filtered electrical routing resistance R3, and form with the resistance R3 electric capacity C1 being in parallel。
6. a kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection according to claim 5, it is characterised in that described electric capacity C2, electric capacity C3 and electric capacity C4 is polar capacitor。
7. a kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection according to claim 6, it is characterised in that described protection chip U1 is AP3843CP integrated circuit。
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| CN201510317015.5A CN104898755B (en) | 2014-11-28 | 2015-06-10 | A kind of emitter-base bandgap grading manifold type bias current sources based on constant current protection |
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| JP2008029134A (en) * | 2006-07-21 | 2008-02-07 | Asahi Kasei Electronics Co Ltd | Switching power supply |
| WO2014069525A1 (en) * | 2012-10-31 | 2014-05-08 | ローム株式会社 | Electronic circuit |
| CN104066242A (en) * | 2014-06-09 | 2014-09-24 | 浙江大学 | Control chip with detection function of fly-back-type LED constant current driver |
| CN203968083U (en) * | 2014-06-17 | 2014-11-26 | 三泰电力技术（南京）股份有限公司 | A kind of pulse duration compressor circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008029134A (en) * | 2006-07-21 | 2008-02-07 | Asahi Kasei Electronics Co Ltd | Switching power supply |
| WO2014069525A1 (en) * | 2012-10-31 | 2014-05-08 | ローム株式会社 | Electronic circuit |
| CN104066242A (en) * | 2014-06-09 | 2014-09-24 | 浙江大学 | Control chip with detection function of fly-back-type LED constant current driver |
| CN203968083U (en) * | 2014-06-17 | 2014-11-26 | 三泰电力技术（南京）股份有限公司 | A kind of pulse duration compressor circuit |
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