CN204334323U - A kind of biased adjustable current source of virtual protection emitter-base bandgap grading manifold type - Google Patents
A kind of biased adjustable current source of virtual protection emitter-base bandgap grading manifold type Download PDFInfo
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- CN204334323U CN204334323U CN201420734660.8U CN201420734660U CN204334323U CN 204334323 U CN204334323 U CN 204334323U CN 201420734660 U CN201420734660 U CN 201420734660U CN 204334323 U CN204334323 U CN 204334323U
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Abstract
The utility model discloses a kind of biased adjustable current source of virtual protection emitter-base bandgap grading manifold type; primarily of DC power supply S; the control circuit be connected with DC power supply S-phase; the temperature-compensation circuit be connected with control circuit; and the photo resistance CDS to be connected with temperature-compensation circuit forms; it is characterized in that; between temperature-compensation circuit and photo resistance CDS, be serially connected with accurate anti-phase conditioned circuit, and the negative pole of DC power supply S is also connected with photo resistance CDS after virtual protection emitter-base bandgap grading manifold type amplifying circuit through beam excitation formula logic amplifying circuit in turn.The LM4431 reference circuits that National Semiconductor produces by the utility model and LMC6062 type power amplifier combine, and can significantly increase range of current output of the present utility model.
Description
Technical field
The utility model relates to a kind of power supply, specifically refers to a kind of biased adjustable current source of virtual protection emitter-base bandgap grading manifold type.
Background technology
At present; whether battery manufacturer generally all needs the various functions detecting this battery protection circuit with bipolar power supply up to standard after having made battery protection circuit, namely utilizes bipolar power supply to realize the quickly calibrated and test of overvoltage to battery protection circuit, under-voltage, overcurrent fast.When so-called bipolar power supply refers to this corona discharge, the electric current of its power source internal flows to positive pole from negative pole, and be flow to negative pole (when the electric current of traditional its inside of common power all can only flow to positive pole from negative pole, and can not flow to negative pole from positive pole) from positive pole to the electric current of its power source internal during this power source charges.But bipolar power supply sold on the market at present is easily subject to the impact of ambient temperature, its power supply performance can be made unstable.How effectively overcoming the negative effect that ambient temperature is brought, is the difficult problem that people are badly in need of solving.
Utility model content
The purpose of this utility model is to overcome the impact that current bipolar power supply is easily subject to ambient temperature, and then causes the defect of unstable properties, provides a kind of biased adjustable current source of virtual protection emitter-base bandgap grading manifold type.
The purpose of this utility model is achieved through the following technical solutions: a kind of biased adjustable current source of virtual protection emitter-base bandgap grading manifold type; primarily of DC power supply S; the control circuit be connected with DC power supply S-phase; the temperature-compensation circuit be connected with control circuit, and the photo resistance CDS be connected with temperature-compensation circuit forms.Meanwhile, between temperature-compensation circuit and photo resistance CDS, be serially connected with accurate anti-phase conditioned circuit, and the negative pole of DC power supply S is also connected with photo resistance CDS after virtual protection emitter-base bandgap grading manifold type amplifying circuit through beam excitation formula logic amplifying circuit in turn, the anti-phase conditioned circuit of described precision is by diode D1, LMC6062 type power amplifier P2, one end is connected with the P pole of diode D1, the resistance R8 that the other end is connected with the electrode input end of LMC6062 type power amplifier P2, one end is connected with temperature-compensation circuit, the potentiometer R9 that the other end is connected with the output of LM4431 reference circuits after being connected with the N pole of diode D1 again, and one end is connected with the electrode input end of LMC6062 type power amplifier P2, the resistance R10 that the other end is connected with the output of LMC6062 type power amplifier P2 after photo resistance CDS forms, the negative input of described LMC6062 type power amplifier P2 is connected with the control end of potentiometer R9, and its output is also connected with the input of LM4431 reference circuits.
Described beam excitation formula logic amplifying circuit is primarily of power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P3, the polar capacitor C5 of positive pole ground connection after optical diode D2, one end is connected with the positive pole of polar capacitor C5, the resistance R11 of other end ground connection after diode D3, positive pole is connected with the tie point of diode D3 with resistance R11, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P3, be serially connected in the resistance R13 between the negative input of power amplifier P3 and output, one end is connected with the output of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C6 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R15 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P3, and its output is connected with the electrode input end of NAND gate IC2, the electrode input end of NAND gate IC3 is connected with the output of power amplifier P3, and the electrode input end of power amplifier P3 is connected with the negative pole of DC power supply S.
Described virtual protection emitter-base bandgap grading manifold type amplifying circuit is primarily of triode Q5, triode Q6, power amplifier P4, power amplifier P5, be serially connected in the resistance R17 between the negative input of power amplifier P4 and output, be serially connected in the polar capacitor C10 between the electrode input end of power amplifier P5 and output, be serially connected in the resistance R16 between the electrode input end of power amplifier P4 and the collector electrode of triode Q5, be serially connected in the resistance R18 between the collector electrode of triode Q5 and the base stage of triode Q6, the electric capacity C9 be in parallel with resistance R18, negative pole is connected with the electrode input end of power amplifier P4, the polar capacitor C8 that positive pole is connected with the emitter of triode Q5 after resistance R19, be serially connected in the resistance R20 between the base stage of triode Q6 and the positive pole of polar capacitor C8, positive pole is connected with the emitter of triode Q6, negative pole is in turn through electric capacity C11 that voltage stabilizing didoe D4 is connected with the output of power amplifier P4 after resistance R21, P pole is connected with the output of power amplifier P5, the diode D5 that N pole is connected with the tie point of resistance R21 with voltage stabilizing didoe D4 after resistance R22 through resistance R23, and P pole is connected with the negative pole of electric capacity C11, the voltage stabilizing didoe D6 that N pole is connected with the tie point of resistance R23 with diode D5 forms, the base stage of described triode Q5 is connected with the positive pole of polar capacitor C8, and its emitter is connected with the emitter of triode Q6, and its collector electrode is connected with the negative input of power amplifier P4, the collector electrode of triode Q6 is connected with the negative input of power amplifier P5, and the electrode input end of power amplifier P5 is connected with the output of power amplifier P4, the described positive pole of polar capacitor C8 is connected with the output of NAND gate IC3, and resistance R23 is then connected with the tie point of resistance R10 with photo resistance CDS with the tie point of resistance R22.
Described control circuit is by triode Q1, triode Q2, be serially connected in the resistance R1 between the collector electrode of triode Q1 and the collector electrode of triode Q2, be serially connected in the RC filter circuit between the emitter of triode Q1 and the negative pole of DC power supply S, be serially connected in the resistance R2 between the base stage of triode Q1 and the negative pole of DC power supply S, and the resistance R5 in parallel with DC power supply S-phase forms; The described emitter of triode Q2 is connected with the positive pole of DC power supply S, and the base stage of triode Q2 is also connected with the collector electrode of triode Q1.
Described temperature-compensation circuit is by triode Q3, triode Q4, power amplifier P1, be serially connected in the resistance R4 between the collector electrode of triode Q3 and the collector electrode of triode Q2, be serially connected in the electric capacity C2 between the electrode input end of power amplifier P1 and output, be serially connected in the electric capacity C3 between the negative input of power amplifier P1 and output, negative pole is connected with the emitter of triode Q4, the electric capacity C4 that positive pole is connected with the N pole of diode D, one end is connected with the negative pole of electric capacity C4, the resistance R6 that the other end is connected with the P pole of diode D, and one end is connected with the output of power amplifier P1, the resistance R7 that the other end is connected with potentiometer R9 forms, the electrode input end of described power amplifier P1 is connected with the collector electrode of triode Q4, and its negative input is connected with the emitter of triode Q3, the collector electrode of described triode Q4 is connected with the collector electrode of triode Q2, its base earth, the base stage of triode Q3 is connected with the positive pole of DC power supply S.
Described RC filtered electrical routing resistance R3, and form with the electric capacity C1 that resistance R3 is in parallel.For guaranteeing result of use, described electric capacity C2, electric capacity C3 and electric capacity C4 are polar capacitor.
The utility model compared with prior art, has the following advantages and beneficial effect:
(1) the utility model overall structure is simple, and it makes and very easy to use.
(2) the utility model can adjust output current value automatically according to the variations in temperature of external environment condition, thus guarantees its stable performance.
(3) the LM4431 reference circuits National Semiconductor produced of the utility model and LMC6062 type power amplifier are combined together to form accurate anti-phase conditioned circuit, therefore can significantly increase range of current output of the present utility model.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the structural representation of virtual protection emitter-base bandgap grading manifold type amplifying circuit of the present utility model.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but execution mode of the present utility model is not limited thereto.
As shown in Figure 1; temp. compensation type power supply described in the utility model is primarily of DC power supply S; the control circuit be connected with DC power supply S-phase; the temperature-compensation circuit be connected with control circuit; the anti-phase conditioned circuit of the precision be connected with temperature-compensation circuit; the photo resistance CDS be connected with the anti-phase conditioned circuit of precision; the beam excitation formula logic amplifying circuit be connected with the negative pole of DC power supply S, and the virtual protection emitter-base bandgap grading manifold type amplifying circuit be serially connected between beam excitation formula logic amplifying circuit and photo resistance CDS forms.
This accurate anti-phase conditioned circuit is by diode D1, LMC6062 type power amplifier P2, and resistance R8, potentiometer R9, resistance R10 and LM4431 reference circuits form.Wherein, LMC6062 type power amplifier P2 and LM4431 reference circuits are National Semiconductor's production.During connection, one end of resistance R8 is connected with the P pole of diode D1, its other end is connected with the electrode input end of LMC6062 type power amplifier P2; One end of potentiometer R9 is connected with temperature-compensation circuit, the other end is connected with the output of LM4431 reference circuits after being connected with the N pole of diode D1 again; One end of resistance R10 is connected with the electrode input end of LMC6062 type power amplifier P2, the other end is connected with the output of LMC6062 type power amplifier P2 after photo resistance CDS.
Simultaneously, the negative input of LMC6062 type power amplifier P2 needs to be connected with the control end of potentiometer R9, its output is then also connected with the input of LM4431 reference circuits, to guarantee that potentiometer R9, LM4431 reference circuits and LMC6062 type power amplifier P2 form an electric loop.For guaranteeing operational effect, the tie point ground connection of resistance R10 and photo resistance CDS, and the electrode input end of LMC6062 type power amplifier P2 also needs the direct voltage of external-15V.
Described control circuit is by triode Q1, and triode Q2, resistance R1, resistance R2, resistance R5 and RC filter circuit form.During connection, resistance R1 is serially connected between the collector electrode of triode Q1 and the collector electrode of triode Q2, between the emitter that RC filter circuit is then serially connected in triode Q1 and the negative pole of DC power supply S.Resistance R2 is serially connected between the base stage of triode Q1 and the negative pole of DC power supply S, and resistance R5 is then in parallel with DC power supply S-phase.
Meanwhile, the emitter of triode Q2 is connected with the positive pole of DC power supply S, and its base stage is also connected with the collector electrode of triode Q1.For guaranteeing operational effect, the resistance of resistance R1, resistance R2, resistance R3 and resistance R5 is 10K Ω.RC filtered electrical routing resistance R3 in the application, and form with the electric capacity C1 that resistance R3 is in parallel.
Temperature-compensation circuit is used for power back-off during ambient temperature change, it is by triode Q3, triode Q4, power amplifier P1, be serially connected in the resistance R4 between the collector electrode of triode Q3 and the collector electrode of triode Q2, be serially connected in the electric capacity C2 between the electrode input end of power amplifier P1 and output, be serially connected in the electric capacity C3 between the negative input of power amplifier P1 and output, negative pole is connected with the emitter of triode Q4, the electric capacity C4 that positive pole is connected with the N pole of diode D, one end is connected with the negative pole of electric capacity C4, the resistance R6 that the other end is then connected with the P pole of diode D, and one end is connected with the output of power amplifier P1, the resistance R7 that the other end is connected with potentiometer R9 forms.That is, the input of power amplifier P1 is connected with the N pole of diode D after potentiometer R9 through resistance R7.
The electrode input end of power amplifier P1 is connected with the collector electrode of triode Q4, and its negative input is also connected with the emitter of triode Q3.And the collector electrode of triode Q4 is also connected with the collector electrode of triode Q2, and its base earth.For guaranteeing result of use, described electric capacity C2, electric capacity C3 and electric capacity C4 all preferentially adopt polar capacitor to realize.
Described beam excitation formula logic amplifying circuit is then primarily of power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P3, the polar capacitor C5 of positive pole ground connection after optical diode D2, one end is connected with the positive pole of polar capacitor C5, the resistance R11 of other end ground connection after diode D3, positive pole is connected with the tie point of diode D3 with resistance R11, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P3, be serially connected in the resistance R13 between the negative input of power amplifier P3 and output, one end is connected with the output of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C6 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R15 that the other end is connected with the negative input of NAND gate IC2 forms.
Meanwhile, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P3, and its output is connected with the electrode input end of NAND gate IC2; The electrode input end of NAND gate IC3 is connected with the output of power amplifier P3, and the electrode input end of power amplifier P3 is connected with the negative pole of DC power supply S.
The structure of described virtual protection emitter-base bandgap grading manifold type amplifying circuit as shown in Figure 2, namely it is by triode Q5, triode Q6, power amplifier P4, power amplifier P5, be serially connected in the resistance R17 between the negative input of power amplifier P4 and output, be serially connected in the polar capacitor C10 between the electrode input end of power amplifier P5 and output, be serially connected in the resistance R16 between the electrode input end of power amplifier P4 and the collector electrode of triode Q5, be serially connected in the resistance R18 between the collector electrode of triode Q5 and the base stage of triode Q6, the electric capacity C9 be in parallel with resistance R18, negative pole is connected with the electrode input end of power amplifier P4, the polar capacitor C8 that positive pole is connected with the emitter of triode Q5 after resistance R19, be serially connected in the resistance R20 between the base stage of triode Q6 and the positive pole of polar capacitor C8, positive pole is connected with the emitter of triode Q6, negative pole is in turn through electric capacity C11 that voltage stabilizing didoe D4 is connected with the output of power amplifier P4 after resistance R21, P pole is connected with the output of power amplifier P5, the diode D5 that N pole is connected with the tie point of resistance R21 with voltage stabilizing didoe D4 after resistance R22 through resistance R23, and P pole is connected with the negative pole of electric capacity C11, the voltage stabilizing didoe D6 that N pole is connected with the tie point of resistance R23 with diode D5 forms.
Meanwhile, the base stage of described triode Q5 is connected with the positive pole of polar capacitor C8, and its emitter is connected with the emitter of triode Q6, and its collector electrode is connected with the negative input of power amplifier P4; The collector electrode of triode Q6 is connected with the negative input of power amplifier P5, and the electrode input end of power amplifier P5 is connected with the output of power amplifier P4.
When connecting, the positive pole of described polar capacitor C8 will be connected with the output of NAND gate IC3, and resistance R23 is then connected with the tie point of resistance R10 with photo resistance CDS with the tie point of resistance R22.
As mentioned above, just the utility model can be realized preferably.
Claims (5)
1. the biased adjustable current source of a virtual protection emitter-base bandgap grading manifold type, primarily of DC power supply S, the control circuit be connected with DC power supply S-phase, the temperature-compensation circuit be connected with control circuit, and the photo resistance CDS to be connected with temperature-compensation circuit forms, it is characterized in that, between temperature-compensation circuit and photo resistance CDS, be serially connected with accurate anti-phase conditioned circuit, and the negative pole of DC power supply S is also connected with photo resistance CDS after virtual protection emitter-base bandgap grading manifold type amplifying circuit through beam excitation formula logic amplifying circuit in turn, the anti-phase conditioned circuit of described precision is by diode D1, LMC6062 type power amplifier P2, one end is connected with the P pole of diode D1, the resistance R8 that the other end is connected with the electrode input end of LMC6062 type power amplifier P2, one end is connected with temperature-compensation circuit, the potentiometer R9 that the other end is connected with the output of LM4431 reference circuits after being connected with the N pole of diode D1 again, and one end is connected with the electrode input end of LMC6062 type power amplifier P2, the resistance R10 that the other end is connected with the output of LMC6062 type power amplifier P2 after photo resistance CDS forms, the negative input of described LMC6062 type power amplifier P2 is connected with the control end of potentiometer R9, and its output is also connected with the input of LM4431 reference circuits, described beam excitation formula logic amplifying circuit is primarily of power amplifier P3, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P3, the polar capacitor C5 of positive pole ground connection after optical diode D2, one end is connected with the positive pole of polar capacitor C5, the resistance R11 of other end ground connection after diode D3, positive pole is connected with the tie point of diode D3 with resistance R11, the polar capacitor C7 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R12 that the other end is connected with the electrode input end of power amplifier P3, be serially connected in the resistance R13 between the negative input of power amplifier P3 and output, one end is connected with the output of NAND gate IC1, the resistance R14 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C6 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C7, the resistance R15 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P3, and its output is connected with the electrode input end of NAND gate IC2, the electrode input end of NAND gate IC3 is connected with the output of power amplifier P3, and the electrode input end of power amplifier P3 is connected with the negative pole of DC power supply S, described virtual protection emitter-base bandgap grading manifold type amplifying circuit is primarily of triode Q5, triode Q6, power amplifier P4, power amplifier P5, be serially connected in the resistance R17 between the negative input of power amplifier P4 and output, be serially connected in the polar capacitor C10 between the electrode input end of power amplifier P5 and output, be serially connected in the resistance R16 between the electrode input end of power amplifier P4 and the collector electrode of triode Q5, be serially connected in the resistance R18 between the collector electrode of triode Q5 and the base stage of triode Q6, the electric capacity C9 be in parallel with resistance R18, negative pole is connected with the electrode input end of power amplifier P4, the polar capacitor C8 that positive pole is connected with the emitter of triode Q5 after resistance R19, be serially connected in the resistance R20 between the base stage of triode Q6 and the positive pole of polar capacitor C8, positive pole is connected with the emitter of triode Q6, negative pole is in turn through electric capacity C11 that voltage stabilizing didoe D4 is connected with the output of power amplifier P4 after resistance R21, P pole is connected with the output of power amplifier P5, the diode D5 that N pole is connected with the tie point of resistance R21 with voltage stabilizing didoe D4 after resistance R22 through resistance R23, and P pole is connected with the negative pole of electric capacity C11, the voltage stabilizing didoe D6 that N pole is connected with the tie point of resistance R23 with diode D5 forms, the base stage of described triode Q5 is connected with the positive pole of polar capacitor C8, and its emitter is connected with the emitter of triode Q6, and its collector electrode is connected with the negative input of power amplifier P4, the collector electrode of triode Q6 is connected with the negative input of power amplifier P5, and the electrode input end of power amplifier P5 is connected with the output of power amplifier P4, the described positive pole of polar capacitor C8 is connected with the output of NAND gate IC3, and resistance R23 is then connected with the tie point of resistance R10 with photo resistance CDS with the tie point of resistance R22.
2. the biased adjustable current source of a kind of virtual protection emitter-base bandgap grading manifold type according to claim 1, it is characterized in that, described control circuit is by triode Q1, triode Q2, be serially connected in the resistance R1 between the collector electrode of triode Q1 and the collector electrode of triode Q2, be serially connected in the RC filter circuit between the emitter of triode Q1 and the negative pole of DC power supply S, be serially connected in the resistance R2 between the base stage of triode Q1 and the negative pole of DC power supply S, and the resistance R5 in parallel with DC power supply S-phase forms; The described emitter of triode Q2 is connected with the positive pole of DC power supply S, and the base stage of triode Q2 is also connected with the collector electrode of triode Q1.
3. the biased adjustable current source of a kind of virtual protection emitter-base bandgap grading manifold type according to claim 2, it is characterized in that, described temperature-compensation circuit is by triode Q3, triode Q4, power amplifier P1, be serially connected in the resistance R4 between the collector electrode of triode Q3 and the collector electrode of triode Q2, be serially connected in the electric capacity C2 between the electrode input end of power amplifier P1 and output, be serially connected in the electric capacity C3 between the negative input of power amplifier P1 and output, negative pole is connected with the emitter of triode Q4, the electric capacity C4 that positive pole is connected with the N pole of diode D, one end is connected with the negative pole of electric capacity C4, the resistance R6 that the other end is connected with the P pole of diode D, and one end is connected with the output of power amplifier P1, the resistance R7 that the other end is connected with potentiometer R9 forms, the electrode input end of described power amplifier P1 is connected with the collector electrode of triode Q4, and its negative input is connected with the emitter of triode Q3, the collector electrode of described triode Q4 is connected with the collector electrode of triode Q2, its base earth, the base stage of triode Q3 is connected with the positive pole of DC power supply S.
4. the biased adjustable current source of a kind of virtual protection emitter-base bandgap grading manifold type according to claim 3, is characterized in that, described RC filtered electrical routing resistance R3, and forms with the electric capacity C1 that resistance R3 is in parallel.
5. the biased adjustable current source of a kind of virtual protection emitter-base bandgap grading manifold type according to claim 4, it is characterized in that, described electric capacity C2, electric capacity C3 and electric capacity C4 are polar capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420734660.8U CN204334323U (en) | 2014-11-28 | 2014-11-28 | A kind of biased adjustable current source of virtual protection emitter-base bandgap grading manifold type |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420734660.8U CN204334323U (en) | 2014-11-28 | 2014-11-28 | A kind of biased adjustable current source of virtual protection emitter-base bandgap grading manifold type |
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| CN204334323U true CN204334323U (en) | 2015-05-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420734660.8U Expired - Fee Related CN204334323U (en) | 2014-11-28 | 2014-11-28 | A kind of biased adjustable current source of virtual protection emitter-base bandgap grading manifold type |
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| CN (1) | CN204334323U (en) |
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2014
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150513 Termination date: 20151128 |