CN104889102A - Wafer cleaning method - Google Patents
Wafer cleaning method Download PDFInfo
- Publication number
- CN104889102A CN104889102A CN201410074458.1A CN201410074458A CN104889102A CN 104889102 A CN104889102 A CN 104889102A CN 201410074458 A CN201410074458 A CN 201410074458A CN 104889102 A CN104889102 A CN 104889102A
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- China
- Prior art keywords
- wave generator
- sonic wave
- wafer
- mega sonic
- crystal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a wafer cleaning method; the surface of a wafer is cleaned by a mega sound wave generator; and the method comprises the following steps: the wafer rotates, and the mega sound wave generator performs the reciprocating motion between the edge of the wafer and the center of the wafer; and in the moving process of the mega sound wave generator, the stop time of the mega sound wave generator on the surface of the wafer is changed. The wafer cleaning method changes the stop time of the mega sound wave generator on the surface of the wafer so as to enable the mega sound wave energy received by the center point of the wafer to be consistent with the mega sound wave energy received by other positions of the wafer, so that the damage of a structure layer at the center point of the wafer or the generation of a pit in the center of the wafer in the cleaning process is prevented.
Description
Technical field
The present invention relates to IC manufacturing field, particularly relate to a kind of method for cleaning wafer.
Background technology
Cleaning utilizes the method for physics, chemistry or mechanism make to be adsorbed on the desorption of contaminants of crystal column surface and leave the process of crystal column surface.Along with the develop rapidly of integrated circuit processing technique and constantly reducing of graphics critical dimension, and the introducing of new material, in ic manufacturing process, the height of cleaning quality has badly influenced performance, the reliability and stability of advanced electronics.At present, it is main that wafer cleaning still cleans in a wet process, and batch processing cleaning technique traditional in wet-cleaning has been difficult to adapt to wet-cleaning under the driving of many technological factors, therefore, need in integrated circuit fabrication process process to introduce new cleaning to meet process requirements.
Single-wafer cleaning technology, due to the risk that can reduce yield loss in batch processing, the requirement etc. avoiding cross pollution, can meet wafer rear, inclined-plane and edge clean, just progressively replaces batch processing cleaning technique.In order to improve wafer cleaning effect further, in Single-wafer cleaning technology, adding ultrasonic wave or mega sonic wave, using ultrasonic wave or mega sonic wave effectively can remove the organic matter of crystal column surface, particle and metal impurities etc., and not destroying crystal column surface characteristic.
Existing Single-wafer cleaning device is when cleaning wafer, ultrasonic wave or mega sonic wave generator stop behind the center of wafer from the edge uniform motion of wafer, therefore, in the whole cleaning process of wafer, the time of the ultrasonic wave suffered by the central point of wafer or megasonic energy impact is the longest, thus causes the structure sheaf of the central spot of wafer to sustain damage, especially when cleansing medium layer, there is pit phenomenon in the dielectric layer of the central spot of wafer, causes product yield to reduce and even scrap.
Summary of the invention
The object of this invention is to provide a kind of method for cleaning wafer, the method can avoid the structure sheaf of the central spot of wafer to sustain damage in cleaning process, thus improves the cleaning performance of wafer, improving product yield.
For achieving the above object, the method for cleaning wafer that the present invention proposes, mega sonic wave generator is utilized to clean crystal column surface, the method comprises: rotating wafer also makes mega sonic wave generator move back and forth between crystal round fringes and crystal circle center, in the motion process of mega sonic wave generator, change the time that mega sonic wave generator stops at crystal column surface.
According to an embodiment of method for cleaning wafer of the present invention, the pass of mega sonic wave generator between the time t that crystal column surface stops and the radius R of wafer is: t=k+m*R
2, wherein, k is constant, and m is coefficient.
According to an embodiment of method for cleaning wafer of the present invention, while the time that crystal column surface stops, change the energy density distribution of mega sonic wave generator at crystal column surface at change mega sonic wave generator.
According to an embodiment of method for cleaning wafer of the present invention, the pass of mega sonic wave generator between the energy density distribution δ and the radius R of wafer of crystal column surface is: when mega sonic wave generator moves to crystal circle center, namely during R=0, mega sonic wave generator is at the energy density distribution δ=δ 1 of crystal column surface, δ 1 is constant, the power P=δ 1*r of mega sonic wave generator
2, r is the radius value of mega sonic wave generator self; When R ≠ 0, δ=N*P/R
2, P is mega sonic wave generator when moving to crystal circle center, and the performance number of mega sonic wave generator, N is coefficient.
For achieving the above object, the another method for cleaning wafer that the present invention proposes, mega sonic wave generator is utilized to clean crystal column surface, the method comprises: rotating wafer also makes mega sonic wave generator move from crystal round fringes to crystal circle center and crosses crystal circle center's point, in the motion process of mega sonic wave generator, change the time that mega sonic wave generator stops at crystal column surface.
According to an embodiment of method for cleaning wafer of the present invention, mega sonic wave generator moves from crystal round fringes to crystal circle center and arrives another edge of wafer after crossing crystal circle center's point.
According to an embodiment of method for cleaning wafer of the present invention, the pass of mega sonic wave generator between the time t that crystal column surface stops and the radius R of wafer is: t=k+m*R
2, wherein, k is constant, and m is coefficient.
According to an embodiment of method for cleaning wafer of the present invention, while the time that crystal column surface stops, change the energy density distribution of mega sonic wave generator at crystal column surface at change mega sonic wave generator.
According to an embodiment of method for cleaning wafer of the present invention, the pass of mega sonic wave generator between the energy density distribution δ and the radius R of wafer of crystal column surface is: when mega sonic wave generator moves to crystal circle center, namely during R=0, mega sonic wave generator is at the energy density distribution δ=δ 1 of crystal column surface, δ 1 is constant, the power P=δ 1*r of mega sonic wave generator
2, r is the radius value of mega sonic wave generator self; When R ≠ 0, δ=N*P/R
2, P is mega sonic wave generator when moving to crystal circle center, and the performance number of mega sonic wave generator, N is coefficient.
The invention has the beneficial effects as follows: the time that the present invention stops at crystal column surface by changing mega sonic wave generator, make the megasonic energy suffered by other positions of the megasonic energy suffered by the central point of wafer and wafer consistent, the structure sheaf avoiding the central spot of wafer sustains damage or produces pit at the center of wafer in cleaning process.
Accompanying drawing explanation
Fig. 1 is the structural representation of an exemplary embodiment of wafer cleaning device.
The motion schematic diagram of mega sonic wave generator when Fig. 2 is wafer cleaning device cleaning wafer surface.
Fig. 3 is the function curve diagram of mega sonic wave generator between the time that crystal column surface stops and wafer radius.
Fig. 4 is the function curve diagram between the energy density distribution of mega sonic wave generator and wafer radius.
Detailed description of the invention
By describing technology contents of the present invention in detail, reached object and effect, coordinate graphic being described in detail below in conjunction with embodiment.
Consult Fig. 1, Fig. 1 is the structural representation of an exemplary embodiment of wafer cleaning device.As shown in Figure 1, this wafer cleaning device comprises cleaning chambers 110, plummer 120, chemical liquid supply line 130 and mega sonic wave generator 140.When using this wafer cleaning device cleaning wafer, wafer 150 is placed on plummer 120, plummer 120 rotates, wafer 150 rotates with plummer 120, chemical liquid supply line 130 is to the surperficial supplying chemical liquid of wafer 150, and mega sonic wave generator 140 is arranged on the top on wafer 150 surface, and mega sonic wave generator 140 swings above wafer 150 surface, as shown in Figure 2, the motion schematic diagram of mega sonic wave generator when Fig. 2 is wafer cleaning device cleaning wafer surface.
In one embodiment of the invention, structure sheaf in order to avoid the central spot of wafer 150 sustains damage or produces pit at the center of wafer 150 in cleaning process, during cleaning wafer 150, rotating wafer 150 also makes mega sonic wave generator 140 move back and forth between wafer 150 edge and wafer 150 center, in the motion process of mega sonic wave generator 140, change mega sonic wave generator 140 in time of wafer 150 superficial residence or the energy density distribution of mega sonic wave generator 140 on wafer 150 surface, or change mega sonic wave generator 140 in time of wafer 150 superficial residence and the energy density distribution of mega sonic wave generator 140 on wafer 150 surface simultaneously.By changing mega sonic wave generator 140 in time of wafer 150 superficial residence and/or the energy density distribution of mega sonic wave generator 140 on wafer 150 surface, make the megasonic energy suffered by other positions of the megasonic energy suffered by the central point of wafer 150 and wafer 150 consistent, the structure sheaf avoiding the central spot of wafer 150 sustains damage or produces pit at the center of wafer 150 in cleaning process.
In another embodiment, structure sheaf in order to avoid the central spot of wafer 150 sustains damage or produces pit at the center of wafer 150 in cleaning process, during cleaning wafer 150, rotating wafer 150 also makes mega sonic wave generator 140 from wafer 150 edge to wafer 150 central motion and crosses wafer 150 central point, in the motion process of mega sonic wave generator 140, change mega sonic wave generator 140 in time of wafer 150 superficial residence or the energy density distribution of mega sonic wave generator 140 on wafer 150 surface, or change mega sonic wave generator 140 in time of wafer 150 superficial residence and the energy density distribution of mega sonic wave generator 140 on wafer 150 surface simultaneously.
Preferably, mega sonic wave generator 140 arrives another edge of wafer 150 after also crossing wafer 150 central point from wafer 150 edge to wafer 150 central motion.Mega sonic wave generator 140 moves to the process at another edge of wafer 150 from an edge of wafer 150, change mega sonic wave generator 140 in time of wafer 150 superficial residence or the energy density distribution of mega sonic wave generator 140 on wafer 150 surface, or change mega sonic wave generator 140 in time of wafer 150 superficial residence and the energy density distribution of mega sonic wave generator 140 on wafer 150 surface simultaneously.
Consult Fig. 3, Fig. 3 is the function curve diagram of mega sonic wave generator between the time that crystal column surface stops and wafer radius.In the above-described embodiments, the pass of mega sonic wave generator 140 between the time t and wafer 150 radius R of wafer 150 superficial residence is: t=k+m*R
2, wherein, k is constant, and m is coefficient.As shown in Figure 3, when mega sonic wave generator 140 moves to the center of wafer 150, in above-mentioned formula, R=0, k=t, by experiment, when can record cleaning wafer 150 center, mega sonic wave generator 140 when obtaining desirable cleaning performance in the time of wafer 150 center dwell, general mega sonic wave generator 140 at the time controling of the center dwell of wafer 150 in 0.1-5 second.Get any point on wafer 150 radius, by experiment, draw cleaning this time, for obtaining desirable cleaning performance, mega sonic wave generator 140 needs the time stopped at this point, thus can calculate m value.
Consult Fig. 4, Fig. 4 is the function curve diagram between the energy density distribution of mega sonic wave generator and wafer radius.In the above-described embodiments, pass between the energy density distribution δ of mega sonic wave generator 140 on wafer 150 surface and wafer 150 radius R is: when mega sonic wave generator 140 moves to the center of wafer 150, namely during R=0, the mega sonic wave generator 140 energy density distribution δ on wafer 150 surface=δ 1, δ 1 is constant, the power P=δ 1*r of mega sonic wave generator 140
2, r is the radius value of mega sonic wave generator 140 self; When R ≠ 0, δ=N*P/R
2, P is mega sonic wave generator 140 when moving to the center of wafer 150, and the performance number of mega sonic wave generator 140, N is coefficient.By experiment, δ 1 value and N value can be obtained, wherein, when δ 1 is worth for cleaning wafer 150 center, the energy density values of the mega sonic wave generator 140 when obtaining desirable cleaning performance.Get any point on wafer 150 radius, when measuring cleaning wafer 150 center, the energy density values of the mega sonic wave generator 140 when obtaining desirable cleaning performance, thus N value can be calculated.
In sum, the present invention is illustrated by above-mentioned embodiment and correlative type, and what oneself was concrete, full and accurate discloses correlation technique, and those skilled in the art can be implemented according to this.And the above embodiment be only used to illustrate the present invention, instead of be used for restriction of the present invention, interest field of the present invention, should be defined by claim of the present invention.
Claims (9)
1. a method for cleaning wafer, utilizes mega sonic wave generator to clean crystal column surface, it is characterized in that, comprising:
Rotating wafer also makes mega sonic wave generator move back and forth between crystal round fringes and crystal circle center, in the motion process of mega sonic wave generator, changes the time that mega sonic wave generator stops at crystal column surface.
2. method for cleaning wafer according to claim 1, is characterized in that, the pass of described mega sonic wave generator between the time t that crystal column surface stops and the radius R of wafer is: t=k+m*R
2, wherein, k is constant, and m is coefficient.
3. method for cleaning wafer according to claim 1, is characterized in that, changes the energy density distribution of mega sonic wave generator at crystal column surface at change mega sonic wave generator while the time that crystal column surface stops.
4. method for cleaning wafer according to claim 3, it is characterized in that, the pass of described mega sonic wave generator between the energy density distribution δ and the radius R of wafer of crystal column surface is: when mega sonic wave generator moves to crystal circle center, namely during R=0, mega sonic wave generator is at the energy density distribution δ=δ 1 of crystal column surface, δ 1 is constant, the power P=δ 1*r of mega sonic wave generator
2, r is the radius value of mega sonic wave generator self; When R ≠ 0, δ=N*P/R
2, P is mega sonic wave generator when moving to crystal circle center, and the performance number of mega sonic wave generator, N is coefficient.
5. a method for cleaning wafer, mega sonic wave generator is utilized to clean crystal column surface, it is characterized in that, comprise: rotating wafer also makes mega sonic wave generator move from crystal round fringes to crystal circle center and crosses crystal circle center's point, in the motion process of mega sonic wave generator, change the time that mega sonic wave generator stops at crystal column surface.
6. method for cleaning wafer according to claim 5, is characterized in that, described mega sonic wave generator moves from crystal round fringes to crystal circle center and arrives another edge of wafer after crossing crystal circle center's point.
7. method for cleaning wafer according to claim 6, is characterized in that, the pass of described mega sonic wave generator between the time t that crystal column surface stops and the radius R of wafer is: t=k+m*R
2, wherein, k is constant, and m is coefficient.
8. method for cleaning wafer according to claim 6, is characterized in that, changes the energy density distribution of mega sonic wave generator at crystal column surface at change mega sonic wave generator while the time that crystal column surface stops.
9. method for cleaning wafer according to claim 8, it is characterized in that, the pass of described mega sonic wave generator between the energy density distribution δ and the radius R of wafer of crystal column surface is: when mega sonic wave generator moves to crystal circle center, namely during R=0, mega sonic wave generator is at the energy density distribution δ=δ 1 of crystal column surface, δ 1 is constant, the power P=δ 1*r of mega sonic wave generator
2, r is the radius value of mega sonic wave generator self; When R ≠ 0, δ=N*P/R
2, P is mega sonic wave generator when moving to crystal circle center, and the performance number of mega sonic wave generator, N is coefficient.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410074458.1A CN104889102A (en) | 2014-03-03 | 2014-03-03 | Wafer cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410074458.1A CN104889102A (en) | 2014-03-03 | 2014-03-03 | Wafer cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104889102A true CN104889102A (en) | 2015-09-09 |
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ID=54022298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410074458.1A Pending CN104889102A (en) | 2014-03-03 | 2014-03-03 | Wafer cleaning method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017173588A1 (en) * | 2016-04-06 | 2017-10-12 | Acm Research (Shanghai) Inc. | Methods and apparatus for cleaning semiconductor wafers |
| CN107799393A (en) * | 2017-09-26 | 2018-03-13 | 合肥新汇成微电子有限公司 | A kind of cleaning method of semiconductor crystal wafer |
| CN108010830A (en) * | 2016-10-31 | 2018-05-08 | 中芯国际集成电路制造(上海)有限公司 | A kind of method for cleaning wafer |
| US11141762B2 (en) | 2015-05-15 | 2021-10-12 | Acm Research (Shanghai), Inc. | System for cleaning semiconductor wafers |
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| CN1757447A (en) * | 2004-10-05 | 2006-04-12 | 三星电子株式会社 | Clean the megasonic equipment of popping one's head in and having this probe |
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Patent Citations (6)
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| DE19629705A1 (en) * | 1996-07-24 | 1998-01-29 | Joachim Dr Scheerer | Ultrasonic cleaning especially of wafer |
| CN1655884A (en) * | 2002-03-29 | 2005-08-17 | 兰姆研究有限公司 | In-situ local heating using megasonic transducer resonator |
| US20040238000A1 (en) * | 2003-05-28 | 2004-12-02 | In-Joon Yeo | Wafer cleaning apparatus with probe cleaning and methods of using the same |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11141762B2 (en) | 2015-05-15 | 2021-10-12 | Acm Research (Shanghai), Inc. | System for cleaning semiconductor wafers |
| US11633765B2 (en) | 2015-05-15 | 2023-04-25 | Acm Research (Shanghai) Inc. | System for cleaning semiconductor wafers |
| US11752529B2 (en) | 2015-05-15 | 2023-09-12 | Acm Research (Shanghai) Inc. | Method for cleaning semiconductor wafers |
| US11911808B2 (en) | 2015-05-15 | 2024-02-27 | Acm Research (Shanghai) Inc. | System for cleaning semiconductor wafers |
| WO2017173588A1 (en) * | 2016-04-06 | 2017-10-12 | Acm Research (Shanghai) Inc. | Methods and apparatus for cleaning semiconductor wafers |
| US11967497B2 (en) | 2016-04-06 | 2024-04-23 | Acm Research (Shanghai) Inc. | Methods and apparatus for cleaning semiconductor wafers |
| CN108010830A (en) * | 2016-10-31 | 2018-05-08 | 中芯国际集成电路制造(上海)有限公司 | A kind of method for cleaning wafer |
| CN108010830B (en) * | 2016-10-31 | 2020-05-22 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method |
| CN107799393A (en) * | 2017-09-26 | 2018-03-13 | 合肥新汇成微电子有限公司 | A kind of cleaning method of semiconductor crystal wafer |
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Application publication date: 20150909 |
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