CN104868062B - Method for manufacturing organic light emitting display device - Google Patents

Method for manufacturing organic light emitting display device Download PDF

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CN104868062B
CN104868062B CN201510082709.5A CN201510082709A CN104868062B CN 104868062 B CN104868062 B CN 104868062B CN 201510082709 A CN201510082709 A CN 201510082709A CN 104868062 B CN104868062 B CN 104868062B
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electrode
weight
metal
source electrode
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CN104868062A (en
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张尚勋
金泰完
沈庆辅
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Dongwoo Fine Chem Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass

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Abstract

The present invention discloses a method for manufacturing an organic light emitting display device, comprising the steps of: a) forming a gate electrode on a substrate; b) forming a gate insulating layer on the substrate comprising the gate electrode; c) forming an active layer on the gate insulating layer; d) forming an insulating layer on the active layer; e) forming a source electrode and a drain electrode contacted with the active layer on the insulating layer; f) forming a passivation layer on the insulating layer for covering the source electrode and the drain electrode; and g) forming an organic light emitting element electrically connected with one of the source electrode and the drain electrode, wherein the step a) comprises forming a metal layer or a laminating layer of aluminum, molybdenum, or silver, and etching the metal layer to form the gate electrode through an etching agent composition, wherein the etching agent composition comprises 50%-70% by weight of phosphoric acid, 2%-15% by weight of nitric acid, 5%-20% by weight of acetic acid, 0.1%-5% by weight of para-toluenesulfonic acid, and the balance water, in this way, metal layers of the gate electrode and a pixel electrode can be etched at the same time, thus excellent etching effect can be achieved, and the organic light emitting display device can be manufactured with improved process efficiency.

Description

The method of manufacture organic light-emitting display device
Technical field
The present invention relates to a kind of method of manufacture organic light-emitting display device.
Background technology
Generally, flat display apparatus are divided into emitting type device and light-receiving type device.Emitting type device can be wrapped Include, for example cathode ray tube, Plasmia indicating panel, el light emitting device, light emitting diode etc..Light-receiving type device can be wrapped Include, for example liquid crystal display.In these, el light emitting device has some advantages, such as wide viewing angle, excellent contrast and High response speed, therefore, which causes the concern of the public as display device of future generation.
This el light emitting device is divided into inorganic electroluminescent device according to the material for forming luminescent layer and organic electroluminescence is sent out Electro-optical device.
In these, Organnic electroluminescent device is self-luminous display, and which is electrically excited fluorescence organic compound to send out Light.The device can be driven at lower voltages, it is easy to be manufactured with thin thickness, and with wide visual angle and high response speed Degree, therefore, its display of future generation as the problem for overcoming conventional liquid crystal and cause the concern of the public.
Organnic electroluminescent device can include anode electrode, cathode electrode and is made up of organic material between them Luminescent layer.For Organnic electroluminescent device, as positive voltage and negative voltage are applied separately on these electrodes, therefore will Luminescent layer is then moved to from anode electrode injected holes through hole transmission layer, while the electronics provided from cathode electrode is worn Cross electron supplying layer and then move to luminescent layer, then, these electronics and hole are in luminescent layer further in conjunction with forming exciton.
When exciton changes from excited state to ground state, phosphor (phosphor) mulecular luminescence in luminescent layer is forming Image.For panchromatic mode Organnic electroluminescent device, there is provided the pixel of red (R), green (G) and blue (B) three kinds of colour light emittings with Obtain panchromatic image.
Meanwhile, thin film transistor (TFT) in such as flat display apparatus of el light emitting device, liquid crystal display etc. ( Hereinafter, referred to TFT) be often used as control each pixel operation switching device and for driving the driving of pixel to fill Put.This thin film transistor (TFT) includes with drain region and source region (impurity of drain region and source region on substrate doped with high concentration) half Conductor active layer, the channel region formed between drain region and source region, the gate insulating film formed on semiconductor active layer, Yi Ji The gate electrode formed on the top of channel region in active layer.
For example, Korean Patent Publication a kind of OLED and its manufacturer of the registration number for 10-1174881 Method.However, the patent does not fundamentally solve the above problems.
The content of the invention
It is therefore an object of the present invention to provide a kind of method of manufacture organic light-emitting display device, the method is using in shape The available etching agent composite in gate electrode and pixel electrode.
The object above of the present invention will be realized by following feature：
(1) a kind of method of manufacture organic light-emitting display device, including：A) gate electrode is formed on substrate；B) including Gate insulation layer is formed on the substrate of the gate electrode；C) active layer is formed on the gate insulation layer；D) on the active layer Form insulating barrier；E) source electrode and drain electrode are formed on the insulating barrier, the source electrode and the drain electrode are had with described Active layer is contacted；F) passivation layer is formed on the insulating barrier, to cover the source electrode and the drain electrode；And g) be formed with Machine light-emitting component, the organic illuminating element are connected electrically to one of the source electrode and the drain electrode, wherein, step A) include forming aluminum metal layer, Mo layer or silver metal layer or their lamination (laminate) layer, then use etchant group Compound etches the metal level to form the gate electrode, and the etching agent composite includes 50wt.% (weight %) extremely The phosphoric acid of 70wt.%, the nitric acid of 2wt.% to 15wt.%, the acetic acid of 5wt.% to 20wt.%, 0.1wt.% to 5wt.% The water of p-methyl benzenesulfonic acid and surplus.
(2) method according to above-mentioned (1), the aluminum metal layer are aluminium lamination or are selected from including aluminum and at least one The alloy of the metal in La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt and C Layer.
(3) method according to above-mentioned (1), the Mo layer are molybdenum layer or are selected from including molybdenum and at least one The alloy-layer of the metal in Ti, Ta, Cr, Ni, Nd, In and Al.
(4) method according to above-mentioned (1), the silver metal layer are silver layer or are selected from including silver and at least one The conjunction of the metal in La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt, Pd and Cu Layer gold.
(5) the step of method according to above-mentioned (1), formation organic illuminating element, includes：Form first electrode, The first electrode is electrically connected with one of the source electrode and the drain electrode；Formed on the first electrode organic Layer；And second electrode is formed on the organic layer.
(6) method according to above-mentioned (5), the first electrode is by forming conductive material layer on the passivation layer Then etch the conductive material layer to be formed with etching agent composite, the conductive material layer is aluminum metal layer, Mo layer Or silver metal layer, metal oxide layer or their laminate layers, the etching agent composite includes 50wt.%'s to 70wt.% Phosphoric acid, the nitric acid of 2wt.% to 15wt.%, the acetic acid of 5wt.% to 20wt.%, 0.1wt.% to 5wt.% to toluene sulphur Acid, and surplus water.
(7) method according to above-mentioned (6), the metal oxide layer are tin indium oxide (ITO) layer, indium zinc oxide (IZO) layer, Zinc Oxide (ZnO) layer, Indium sesquioxide. zinc-tin (IZTO) layer, cadmium tin (CTO) layer or indium gallium zinc (IGZO) Layer.
According to the method for the manufacture organic light-emitting display device, the gold to form gate electrode and pixel electrode can be etched simultaneously Category layer, to reach excellent etch effect.Additionally, with respectively using the conventional method of corresponding etching agent composite compared with, its Whole manufacturing process can be simplified, and reduce process costs, therefore, it is possible to be shown with the process efficiency production organic light emission for improving Showing device.
Specific embodiment
The invention discloses a kind of method of manufacture organic light-emitting display device, including：A) gate electrode is formed on substrate； B) gate insulation layer is formed on the substrate including gate electrode；C) active layer is formed on gate insulation layer；D) formed on active layer Insulating barrier；E) source electrode and drain electrode is formed on the insulating layer, source electrode and drain electrode are contacted with active layer；F) on the insulating layer Passivation layer is formed, to cover source electrode and drain electrode；And organic illuminating element g) is formed, the organic illuminating element is electrically connected To one of the source electrode and drain electrode, wherein, step a) include being formed aluminum metal layer, Mo layer or silver metal layer, Or their laminate layers, then metal level is etched to form gate electrode with etching agent composite, the etching agent composite includes The phosphoric acid of 50wt.% to 70wt.%, the nitric acid of 2wt.% to 15wt.%, the acetic acid of 5wt.% to 20wt.%, 0.1wt.% are extremely The water of the p-methyl benzenesulfonic acid of 5wt.% and surplus, therefore, it can while etching the metal for forming gate electrode and pixel electrode Layer, to reach excellent etch effect, and the process efficiency manufacture organic light-emitting display device to improve.
Hereinafter, the method that will be described in manufacture organic light-emitting display device according to the embodiment of the present invention.
First, a) form gate electrode on substrate.
This substrate can be prepared using silicon (Si), glass or organic material.When using silicon (Si) as substrate, absolutely Edge layer (not shown) can also be formed on a surface of a substrate by thermal oxidation technology.
Conductive material layer (for example, the metal-oxide of metal or conduction) is formed on substrate, then, is etched with shape Into gate electrode.
According to the embodiment of the present invention, conductive material layer can include, for example aluminum metal layer, Mo layer, silver metal Layer, or their laminate layers.
In the disclosure, aluminum metal layer refers to aluminium lamination or aluminium alloy layer.For example, aluminium alloy layer used herein can include Alloy-layer Al-X, alloy-layer Al-X include aluminum and another kind of metal (X for it is at least one selected from La, Mg, Zn, In, Ca, Te, Metal in Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt and C).When by Al-X alloy-layers be used as aluminum metal During layer, it can be advantageous to avoid mound (Hill-lock) phenomenon that some are caused due to the heating of aluminum and caused technological problemses.
Mo layer refers to molybdenum layer or Mo alloy, and battery (cell) reaction for being buffered between thin layer.Molybdenum Alloy-layer can be for example, by the molybdenum as main component and at least one gold in Ti, Ta, Cr, Ni, Nd, In and Al Belong to alloying to be formed.
Silver metal layer refers to silver layer or ag alloy layer.Ag alloy layer can for example, by as key component silver and extremely It is few a kind of in La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt, Pd, Cu It is metallic alloying being formed.In view of to metal wire (wire) deposition in surface adhesion and in visible wavelength range Reflectance, preferably use the silver alloy including Pd and Cu.
Metal level can be etched to be formed with the etching agent composite including phosphoric acid, nitric acid, acetic acid and p-methyl benzenesulfonic acid Gate electrode.
Etching agent composite of the invention, primary oxidizers of the phosphoric acid for metal oxide layer.
The content of phosphoric acid is not particularly limited, but, the amount of included phosphoric acid relative to compositionss gross weight for example Can be 50wt.% to 70wt.%.If the content of phosphoric acid is less than 50wt.%, due to lacking etch capabilities, therefore will not fill It is etched with dividing.When the content of phosphoric acid is more than 70wt.%, metal is etched excessively, and the area of remaining metal level diminishes, So as to electrode can not be played a part of.
Nitric acid is the oxidant of auxiliary, and which plays a part of to control etch-rate and reduce cone angle.
The content of nitric acid is not particularly limited, but, the amount of included nitric acid relative to compositionss gross weight for example Can be 2wt.% to 15wt.%, preferably 3wt.% to 8wt.%.If the content of nitric acid is less than 2wt.%, metal level Etch-rate can reduce, and remaining silver metal layer can produce the defect for causing skin dark stain (dark spot).When containing for nitric acid When amount is more than 15wt.%, etch-rate can increase, so as to be difficult to control to multiple stages of the technique.
Acetic acid is the buffer agent for controlling reaction rate etc., and can control the degradation rate of nitric acid.Generally, acetic acid is played Reduce the effect of degradation rate.
The content of acetic acid is not particularly limited, but, the amount of included acetic acid relative to compositionss gross weight for example Can be 5wt.% to 20wt.%, preferably 5wt.% to 15wt.%.If the content of acetic acid is less than 5wt.%, metal level Smoothly will not be etched, so as to reduce etch uniformity.When the content of acetic acid is more than 20wt.%, it may appear that foaming, and Silver metal layer smoothly can not be etched.
P-methyl benzenesulfonic acid plays a part of to improve the uniformity of first electrode and gate electrode, and the etching as Mo layer The etching control agent of inhibitor and silver metal layer.
The content of p-methyl benzenesulfonic acid is not particularly limited, but, the amount of included p-methyl benzenesulfonic acid is relative to compositionss Gross weight can for example be 0.1wt.% to 5wt.%.If the content of p-methyl benzenesulfonic acid is less than 0.1wt.%, silver metal The etch uniformity of layer can be reduced, and speckle occur.When the content of p-methyl benzenesulfonic acid is more than 5wt.%, silver metal layer can be remained Remaining residue simultaneously causes the generation of dark spot defect.
Etching agent composite of the invention can be by suitably using the said components according to particular requirement, then It is added thereto to water to prepare to control the compositionss being monolithically fabricated.That is, surplus of the water for total composition.It is preferred that Ground, the compositionss being monolithically fabricated desirably are controlled so that said components are respectively included in above-mentioned content range.
The type of water is not particularly limited, it is preferred that deionized-distilled water is used, it is highly preferred that using for quasiconductor The deionized-distilled water of the resistivity with 18M Ω cm or bigger of technique.
Then, b) gate insulation layer is formed on the substrate including gate electrode.
Gate insulation layer can by by insulator-coating to the substrate including gate electrode, and then patterned come shape Into.
Insulant is not particularly limited, but may include known any typical insulant in the related art.Example Such as can be using silicon oxide, tantalum oxide, aluminium oxide etc..These materials can be used alone or with its combination of two or more Use.
Then, c) form active layer on gate insulation layer.
Active layer can by semiconductor substance is coated on gate insulation layer, and then patterned to be formed, will half Conductive species are coated on gate insulation layer the gate electrode for corresponding to the pass that depositing operation is obtained, and depositing operation is, for example, physical vapor Deposition (PVD), chemical vapor deposition (CVD), ald (ALD) etc..
Active layer can include the source/drain regions doped with n-type impurity or p-type impurity, and for connect source region and The channel region in drain region.
Semiconductor substance used herein can include, such as inorganic semiconductor, organic semiconductor, oxide semiconductor Deng, they can be used alone or with its two or more be applied in combination.
The specific example of inorganic semiconductor can including CdS, GaS, ZnS, CdSe, CaSe, ZnSe, CdTe, SiC, Si etc., They can be used alone or with its two or more be applied in combination.
Organic semi-conductor specific example can include：Polythiophene and its derivant, polyparaphenylene's acetylene (polyparaphenylene vinylene) and its derivant, polyparaphenylene and its derivant, polyfluorene and its derivant, poly- thiophene Fen acetylene and its derivant, polythiophene-heteroaromatic copolymer and its derivant.Additionally, small molecule for example includes：And five Benzene, aphthacene, the polycyclic aromatic hydrocarbon (oligoacene) of naphthalene and its derivant, α -6- thiophene, the Oligopoly thiophene of α -5- thiophene and Its derivant, there are metal/phthalocyanine without metal and its derivant, pyromellitic acid dianhydride or pyromellitic diimide and its derivative Thing, tetracarboxylic dianhydride or tetracarboxylic acid diimide and its derivant.
The specific example of oxide semiconductor can include at least one selected from gallium (Ga), indium (In), zinc (Zn) and stannum (Sn) element, and oxygen.For example, active layer can for ZnO, ZnGaO, ZnInO, GaInO, GaSnO, ZnSnO, InSnO, (wherein, a, b and c are respectively for HfInZnO, ZnGaInO etc., preferably GI-Z-O layers [a (In2O3) b (Ga2O3) c (ZnO) layer] Meet a >=0, b >=0, c>The real number of 0 condition).
Then, d) form insulating barrier on active layer.
It is provided specifically for the insulating barrier of the raceway groove of protection active layer.Insulating barrier can be designed to cover whole active layer Rather than only covering contacts the region of source/drain electrode, however, which is not limited thereto, can only in the top shape of raceway groove Into insulating barrier.
Insulating barrier is also used as resistant layer (' etching stopping layer ').
Then insulating barrier can be patterned to be formed by coating insulant within the above range.
Then, source electrode and drain electrode is formed on the insulating layer e), source electrode and drain electrode are contacted with active layer.
Source electrode and drain electrode can be by a insulating layer corresponding to active layer and source electrode and drain electrode contact site Contact hole is formed at the position divided, and is then formed conductive material layer on the insulating layer, and is etched to be formed.
Conductive material layer can be aluminum metal layer, Mo layer, silver metal layer or their laminate layers.Source electrode and leakage Electrode can be formed by using above-mentioned etching agent composite etching conductive material layer of the invention.
According to the embodiment of the present invention, in above-mentioned etch process, the mid portion of source electrode and drain electrode, i.e. The sloping portion formed at the position corresponding to gate electrode marginal portion can be etched and remove.
Therefore, source electrode may include the first source electrode for being formed respectively and the second source electrode.Here, at the top of active layer The first source electrode of upper formation, and the second source electrode is formed on the part for be formed without active layer.Thus, the first source electrode and Second source electrode is formed not with sloping portion with even shape respectively.Similarly, first is formed on the top of active layer Drain electrode, and the second drain electrode is formed on the part for be formed without active layer.Thus, the first drain electrode and the second drain electrode Formed not with sloping portion with even shape respectively.
Hereafter, the 3rd source electrode of formation and the 3rd drain electrode during following first electrodes is formed.Thus, the 3rd Source electrode is formed to connect the first source electrode and the second source electrode, and the 3rd drain electrode is formed to the first drain electrode Connect with the second drain electrode.
Similarly, remove source/drain electrode sloping portion after, by tin indium oxide (ITO) electrode etc. by this A little electrode connections, so as to the failure for preventing from being caused by sloping portion, therefore reduce device defect.
Describe in the Korean Patent that registration number is 1174881 that embodiment of above of the invention obtains is concrete Construction and effect, the content of the Korean Patent is incorporated herein by.
Then, passivation layer is formed on the insulating layer f), to cover source electrode and drain electrode.
Then, organic illuminating element is formed g), the organic illuminating element is connected electrically in source electrode and drain electrode one Person.
Organic illuminating element can be prepared by the following method：Formed and be electrically connected with one of source electrode and drain electrode First electrode；Organic layer is formed on the first electrode；And second electrode is formed on organic layer.
First electrode can be formed by the following method：Over the passivation layer in first electrode and one of source electrode and drain electrode Contact hole is formed at the position of connection, is then formed conductive material layer over the passivation layer, and is etched.
For example, conductive material layer can include aluminum metal layer, Mo layer, silver metal layer, metal oxide layer or they Laminate layers.The layer is etched by using etching agent composite of the invention, first electrode can be formed.
Metal oxide layer is tin indium oxide (ITO) layer, indium zinc oxide (IZO) layer, Zinc Oxide (ZnO) layer, Indium sesquioxide. zinc-tin (IZTO) layer, cadmium tin (CTO) layer or indium gallium zinc (IGZO) layer, preferably indium tin oxide layer or indium gallium zinc layers, but It is not only restricted to this.
The pixel confining layers by made by insulant can also be formed over the passivation layer, to cover first electrode.This In the case of, can be by the partially patterned to form hole of pixel confining layers (hereinafter, PDL), in the part of the pixel confining layers In, first electrode and organic layer are connected to each other.
More specifically, PDL is configured to cover the edge of first electrode.The PDL has the effect for limiting light-emitting zone, with And increase first electrode edge and second electrode between interval effect, to prevent electric field to be concentrated in the side of first electrode Edge point, so that prevent short circuit between the first electrode and the second electrode.
Subsequently, organic layer is formed on the first electrode.
Organic layer can be provided with hole injection/transport layer, luminescent layer, electron injection transfer layer etc., and they are all laminated or are selected Selecting property it is laminated.However, it is necessary to arrange luminescent layer.
Further, second electrode is formed on organic layer.
First electrode is set so as to each pattern of pixels.
For for obtaining the positive surface-emitting type structure of the image in second electrode direction, first electrode can be configured to instead Radio pole.For this purpose, arranging the reflecting layer by made by Al, Ag etc..
When using first electrode as anode electrode, including by the metal-oxide with high work function (absolute value) Layer made by (such as ITO, IZO, ZnO etc.).When using first electrode as cathode electrode, using having, low work function is (exhausted To value) high-conductivity metal, such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca etc..Therefore, in this case Above-mentioned reflecting layer is not needed.
Second electrode can be set to the electrode of light-permeable.For this purpose, may include using Ag, Mg, Al, Pt, Pd, Au, Ni, The Semitransmissive reflecting layer formed as thin layer by Nd, Ir, Cr, Li, Ca etc..In addition, it may include the metal-oxide of light-permeable, Such as ITO, IZO, ZnO etc..When using first electrode as anode, second electrode becomes negative electrode.On the other hand, when using When one electrode is as negative electrode, second electrode becomes anode.
Protective layer can also be formed on the second electrode, and is closed using glass.
Hereinafter, will propose preferred embodiment with the present invention more particularly described below.However, enforcement given below Example is merely to illustrate the present invention, and those skilled in the relevant art will be apparent from understanding that various alternatives and modification can be in the scope of the present invention Within spirit.This alternative and modification are fully included in the appended claims.
Embodiment and comparing embodiment
(1) preparation of etching agent composite
Be prepared for etching agent composite, the etching agent composite have the different constituent listed in table 1 below and Content and the water including surplus.
[table 1]
(2) formation of metal wire
1) gate electrode
Mo/Al/Mo metal levels are formed by deposition process on the glass substrate, by the layer metal level for being formed using above-mentioned Each etching agent composite is etched to form gate electrode.
2) first electrode
Gate electrode, source electrode and drain electrode is formed on the glass substrate, then forms passivation layer on the glass substrate.This Afterwards, the lamination Rotating fields of ITO/APC (AgPdCu)/ITO are formed over the passivation layer, then using above-mentioned each etching agent composite It is etched to form first electrode.Here, will be drained and first electrode connection by making hole in the passivation layer, so as to steady Ground transmitting telecommunication number.
EXPERIMENTAL EXAMPLE：The evaluation of etching performance
Observed according to the side described in above-described embodiment and comparing embodiment by using scanning electron microscope (SEM) The gate electrode of each organic light-emitting display device that method makes and first electrode, comment to etching performance according to following standard Valency, its result are listed in table 2 below.
<Lateral erosion>
○：(gate electrode) is less than 1.3 μm
(pixel electrode) is less than 0.5 μm
△：1.3 μm of (gate electrode) or bigger and it is less than 1.6 μm
0.5 μm of (pixel electrode) or bigger and it is less than 1.0 μm
X：1.6 μm or bigger of (gate electrode)
1.0 μm or bigger of (pixel electrode)
<Cone angle>
○：30 ° more greatly and are less than 50 °
△：50 ° more greatly and are less than 70 °
X：Less than 30 ° or not less than 70 °
[table 2]
With reference to upper table 2, had according to the grid in the organic light-emitting display device that method described in embodiment 1 makes Little lateral erosion, and show excellent cone angle.Similarly, first electrode has little lateral erosion, and shows not sending out Existing residue.
However, for basis is in the organic light emitting display of comparing embodiment 1 to the method making described in comparing embodiment 8 Device, gate electrode and first electrode have the etching performance of difference, therefore, low practicality is shown in electrical wiring.

Claims (4)

1. it is a kind of manufacture organic light-emitting display device method, including：
A) gate electrode is formed on substrate；
B) gate insulation layer is formed on the substrate including the gate electrode；
C) active layer is formed on the gate insulation layer；
D) insulating barrier is formed on the active layer；
E) source electrode and drain electrode are formed on the insulating barrier, the source electrode and the drain electrode are connect with the active layer Touch；
F) passivation layer is formed on the insulating barrier, to cover the source electrode and the drain electrode；And
G) organic illuminating element is formed, the organic illuminating element is connected electrically in the source electrode and the drain electrode Person,
Wherein, step a) includes being formed the laminate layers of aluminum metal layer, Mo layer, silver metal layer or above-mentioned material layer, Ran Houyong Etching agent composite etches formed metal level to form the gate electrode, and the etching agent composite includes 50 weight % extremely The acetic acid of the nitric acid of the phosphoric acid of 70 weight %, 2 weight % to 15 weight %, 5 weight % to 20 weight %, 0.1 weight % are to 5 weights The water of the p-methyl benzenesulfonic acid of amount % and surplus,
Wherein, include the step of the formation organic illuminating element：
First electrode is formed, the first electrode is electrically connected with one of the source electrode and the drain electrode；
Organic layer is formed on the first electrode；And
Second electrode is formed on the organic layer,
Wherein, the first electrode is by forming conductive material layer and then etching institute with etching agent composite on the passivation layer State conductive material layer to be formed, the conductive material layer is metal oxide layer, and the etching agent composite includes 50 weight % The nitric acid of phosphoric acid, 2 weight % to 15 weight % to 70 weight %, the acetic acid of 5 weight % to 20 weight %, 0.1 weight % to 5 The water of the p-methyl benzenesulfonic acid of weight % and surplus,
Wherein, the metal oxide layer is tin indium oxide (ITO) layer, indium zinc oxide (IZO) layer, Zinc Oxide (ZnO) layer, Indium sesquioxide. Zinc-tin (IZTO) layer, cadmium tin (CTO) layer or indium gallium zinc (IGZO) layer.
2. method according to claim 1, wherein, the aluminum metal layer is aluminium lamination or is to include aluminum and at least one The conjunction of the material in La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt and C Layer gold.
3. method according to claim 1, wherein, the Mo layer is molybdenum layer or is to include molybdenum and at least one The alloy-layer of the metal in Ti, Ta, Cr, Ni, Nd, In and Al.
4. method according to claim 1, wherein, the silver metal layer is silver layer or is to include silver and at least one Material in La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt, Pd and Cu Alloy-layer.
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