CN104868013B - 太阳能晶硅电池扩散工艺 - Google Patents
太阳能晶硅电池扩散工艺 Download PDFInfo
- Publication number
- CN104868013B CN104868013B CN201510175303.1A CN201510175303A CN104868013B CN 104868013 B CN104868013 B CN 104868013B CN 201510175303 A CN201510175303 A CN 201510175303A CN 104868013 B CN104868013 B CN 104868013B
- Authority
- CN
- China
- Prior art keywords
- diffusion
- temperature
- propulsion
- flow rate
- crystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 36
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 4
- 238000000034 method Methods 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- XFDJMIHUAHSGKG-UHFFFAOYSA-N chlorethoxyfos Chemical compound CCOP(=S)(OCC)OC(Cl)C(Cl)(Cl)Cl XFDJMIHUAHSGKG-UHFFFAOYSA-N 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及太阳能电池生产领域，具体是一种太阳能晶硅电池扩散工艺。步骤一、扩散，将硅片放入扩散炉中，保持载舟温度为700‑780℃，以2‑10℃/min的速率升温至720‑790℃进行扩散，按照氮气流量10L/min、三氯氧磷流量1400ml/min、氧气流量180ml/min的标准进行扩散，时间为8min；步骤二、推进一，以787℃为基础温度，按照6℃/min的速率升温至847℃，开始推进工艺，保持氮气流量为15L/min，推进10min；步骤三、推进二，以847℃为基础温度，以6℃/min的速率降温至750℃，推进30min，保持氧气流量为200ml/min；本发明在提高了扩散的均匀性的同时，减小方阻波动范围，提高太阳能电池的转换效率。
Description
技术领域
本发明涉及太阳能电池生产领域，具体是一种太阳晶硅电池扩散工艺。
背景技术
太阳能电池的制结过程是在一块基体材料上生成导电类型不同的扩散层，它和制结前的表面处理均是电池制造过程中的关键工序。制结方法有热扩散，离子注入，外延，激光及高频电注入法等。本节主要介绍热扩散法。 扩散是物质分子或原子运动引起的一种自然现象，热扩散制p—n结法为用加热方法使V族杂质掺入P型或Ⅲ族杂质掺入n型硅。硅太阳电池中最常用的V族杂质元素为磷，Ⅲ族杂质元素为硼。 一般分为两步首先进行扩散然后进行推进，扩散的目的是形成p—n结，推进的目的是生成正负极并在正负极形成一定的距离。当前的推进步骤一般就是以扩散温度为基础，按照扩散温度上升的速率升温至820-900℃，开始推进工艺，采用传统工艺做成的硅片方阻波动较大，影响电池效率稳定性，对电池产品平均效率产生不良影响。
发明内容
本发明索要解决的技术问题是：如何减少硅片方阻波动，提高太阳能电池的稳定性。
本发明所采用的技术方案是：步骤一、扩散，将硅片放入扩散炉中，保持载舟温度为700-780℃，以2-10℃/min的速率升温至720-790℃进行扩散，按照氮气流量10L/min、三氯氧磷流量1400ml/min、氧气流量180ml/min的标准进行扩散，时间为8min；
步骤二、推进一，以787℃为基础温度，按照6℃/min的速率升温至847℃，开始推进工艺，保持氮气流量为15L/min，推进10min；
步骤三、推进二，以847℃为基础温度，以6℃/min的速率降温至750℃，推进30min，保持氧气流量为200ml/min；
步骤四、让扩散炉自然冷却后取出硅片。
本发明的有益效果是：本专利采用三步扩散法，把原来的推进工艺分为两个步骤进行，通过两步高温有氧和一步高温无氧推进磷扩散，在提高了扩散的均匀性的同时，减小方阻波动范围，提高太阳能电池的转换效率。
具体实施方式
本发明在原生产工艺基础上进行了改进。
1、扩散：炉内载入硅片，炉管温度为750℃。以6℃/min的速率升温至787℃进行扩散，按照氮气流量6L/min、三氯氧磷流量1100ml/min、氧气流量300ml/min的标准进行扩散，时间为8min。
2、推进1：扩散过程结束后，以787℃为基础，按照6℃/min的速率升温至847℃，开始推进工艺，期间氮气流量为15L/min。推进10min。
3、推进2：以847℃为基础温度，以6℃/min的速率降温至750℃，推进30min，期间氧气流量为200ml/min。
4、工艺结束，待炉温降下后卸载硅片。
表一：运用传统扩散工艺生产所得产品效率及参数图表
| 行标数 | 容载数 | 平均转换效率 | 平均填充因子 | 平均短路电流 |
| DM-SH-F4-20150224--003 | 555 | 19.54% | 76.4819 | 9.4442 |
| DM-SH-F4-20150224-022 | 773 | 19.66% | 76.8080 | 9.4327 |
| DM-SH-F4-20150224-005 | 48 | 19.54% | 76.6246 | 9.4221 |
| LT-SH-F4-20150223--L | 67 | 19.32% | 75.7978 | 9.4217 |
| LT-SH-F4-20150222--L-1 | 10 | 19.31% | 75.9318 | 9.4086 |
| 2015-02-022-2-DM-EXP-1 | 2383 | 19.39% | 75.7046 | 9.4862 |
| DM-SH-F4-20150223-008 | 1199 | 19.36% | 75.7878 | 9.4689 |
| DM-SH-F4-20150224-018 | 1184 | 19.41% | 75.6203 | 9.5037 |
表二：运用本发明扩散工艺生产所得产品效率及参数图表
| 行标数 | 容载数 | 平均转换效率 | 平均填充因子 | 平均短路电流 |
| LT-SH-F4-20150228--013 | 839 | 19.85% | 77.0649 | 9.4972 |
| LT-SH-F4-20150228-002 | 591 | 19.84% | 77.2185 | 9.4662 |
| LT-SH-F4-20150227--018 | 1035 | 19.81% | 76.6498 | 9.5274 |
| LT-SH-F4-20150227--Lt-001 | 558 | 19.87% | 77.5058 | 9.4696 |
| LT-SH-F4-20150227--Lt-002 | 630 | 19.81% | 77.2893 | 9.4879 |
| DM-SH-F4-20150227-017-LT | 929 | 19.84% | 77.0760 | 9.4925 |
| DM-SH-F4-20150227-0A-BTH | 99 | 19.83% | 77.6369 | 9.5016 |
说明：从表一与表二的对比数值可以看出，扩散工艺改进后所生产电池片效率提高约有0.5%，各项参数（填充因子、短路电流与开路电压）指标也相应提高，反映了电池品质的提升。
本专利通过对扩散生产线原材料消耗量的调节，节约了原材料，通过三步扩散法优化了扩散工艺，对提高晶硅电池转换效率起到了明显效果。
Claims (1)
1.太阳能晶硅电池扩散工艺，其特征在于按照如下的步骤进行：
步骤一、扩散，将硅片放入扩散炉中，保持载舟温度为700-780℃，以2-10℃/min的速率升温至720-790℃进行扩散，按照氮气流量10L/min、三氯氧磷流量1400ml/min、氧气流量180ml/min的标准进行扩散，时间为8min；
步骤二、推进一，以787℃为基础温度，按照6℃/min的速率升温至847℃，开始推进工艺，保持氮气流量为15L/min，推进10min；
步骤三、推进二，以847℃为基础温度，以6℃/min的速率降温至750℃，推进30min，保持氧气流量为200ml/min；
步骤四、让扩散炉自然冷却后取出硅片。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510175303.1A CN104868013B (zh) | 2015-04-15 | 2015-04-15 | 太阳能晶硅电池扩散工艺 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510175303.1A CN104868013B (zh) | 2015-04-15 | 2015-04-15 | 太阳能晶硅电池扩散工艺 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104868013A CN104868013A (zh) | 2015-08-26 |
| CN104868013B true CN104868013B (zh) | 2017-02-22 |
Family
ID=53913711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510175303.1A Expired - Fee Related CN104868013B (zh) | 2015-04-15 | 2015-04-15 | 太阳能晶硅电池扩散工艺 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104868013B (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086176A (zh) * | 2017-04-20 | 2017-08-22 | 通威太阳能（合肥）有限公司 | 一种扩散低表面浓度提效工艺 |
| CN108766874A (zh) * | 2018-06-07 | 2018-11-06 | 通威太阳能（安徽）有限公司 | 一种可以增加少子寿命并提高转换效率的扩散工艺 |
| CN109545673B (zh) * | 2018-10-12 | 2022-01-11 | 南昌大学 | 一种晶体硅太阳电池用无氧扩散方法 |
| CN109559982A (zh) * | 2018-10-23 | 2019-04-02 | 开封大学 | 一种n型晶体硅太阳电池的硼扩散工艺 |
| CN110265293A (zh) * | 2019-05-24 | 2019-09-20 | 江苏润阳悦达光伏科技有限公司 | 太阳能电池的p-n结制作工艺 |
| CN112582499B (zh) * | 2020-11-30 | 2022-09-23 | 中建材浚鑫科技有限公司 | 一种适用于多主栅搭配大尺寸硅片的扩散工艺 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916799A (zh) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池选择性发射结的制备方法 |
| CN102703987A (zh) * | 2012-06-08 | 2012-10-03 | 天威新能源控股有限公司 | 基于多晶硅中金属杂质去除的低温磷吸杂扩散工艺 |
| CN103632935A (zh) * | 2013-11-29 | 2014-03-12 | 英利集团有限公司 | N 型硅片的硼扩散方法、晶体硅太阳能电池及其制作方法 |
-
2015
- 2015-04-15 CN CN201510175303.1A patent/CN104868013B/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916799A (zh) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池选择性发射结的制备方法 |
| CN102703987A (zh) * | 2012-06-08 | 2012-10-03 | 天威新能源控股有限公司 | 基于多晶硅中金属杂质去除的低温磷吸杂扩散工艺 |
| CN103632935A (zh) * | 2013-11-29 | 2014-03-12 | 英利集团有限公司 | N 型硅片的硼扩散方法、晶体硅太阳能电池及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104868013A (zh) | 2015-08-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104868013B (zh) | 太阳能晶硅电池扩散工艺 | |
| CN106057980B (zh) | 一种晶体硅太阳能电池的磷扩散方法 | |
| CN101916799B (zh) | 一种晶体硅太阳能电池选择性发射结的制备方法 | |
| CN103966665B (zh) | 一种掺镓多晶硅锭及其制备方法 | |
| CN105280484B (zh) | 一种晶硅高效高方阻电池片的扩散工艺 | |
| CN104404626B (zh) | 物理冶金多晶硅太阳能电池的磷扩散方法 | |
| CN106784153A (zh) | 太阳能电池片低压扩散工艺 | |
| CN105780127B (zh) | 一种晶体硅太阳能电池的磷扩散方法 | |
| CN102522449B (zh) | 一种制备硅太阳能电池的磷扩散方法 | |
| CN104716232B (zh) | 一种太阳能电池发射极掺杂分布方法 | |
| CN101241954A (zh) | 晶体硅太阳能电池的热处理方法 | |
| CN108110088A (zh) | 太阳能电池的低压扩散工艺及利用其制备得到的太阳能电池 | |
| CN107910256A (zh) | 太阳能电池低表面磷源浓度扩散方法 | |
| CN102130211B (zh) | 一种改善太阳能电池表面扩散的方法 | |
| CN101494253B (zh) | 一种选择性发射极太阳电池制造过程中的重扩散和轻扩散工艺 | |
| CN105070782A (zh) | 一种太阳能电池硅片生产过程中的低压扩散工艺 | |
| CN102925982B (zh) | 一种太阳能电池及其扩散方法 | |
| CN103227245A (zh) | 一种p型准单晶硅太能阳电池pn结的制造方法 | |
| CN103178157B (zh) | 一种选择性发射极多晶硅太阳电池的制备方法 | |
| CN102569532A (zh) | 选择性发射极电池二次沉积扩散工艺 | |
| CN104409557A (zh) | 一种用于加深硅片pn结深度的扩散方法及硅片 | |
| CN104752564A (zh) | 一种提高多晶硅开路电压的新型扩散工艺 | |
| EP2698806A1 (en) | Method for producing a dopant profile in a semiconductor substrate | |
| CN107706269B (zh) | 一种太阳能多晶电池p-n结的扩散工艺及前表面处理方法 | |
| CN109559982A (zh) | 一种n型晶体硅太阳电池的硼扩散工艺 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170222 |