CN104854790B - 多模多频带功率放大器 - Google Patents

多模多频带功率放大器 Download PDF

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Publication number
CN104854790B
CN104854790B CN201380065958.2A CN201380065958A CN104854790B CN 104854790 B CN104854790 B CN 104854790B CN 201380065958 A CN201380065958 A CN 201380065958A CN 104854790 B CN104854790 B CN 104854790B
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CN
China
Prior art keywords
amplifier
signal
transformer
mode
frequency band
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Active
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CN201380065958.2A
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English (en)
Chinese (zh)
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CN104854790A (zh
Inventor
C-H·李
W·金
M·安
J·查
Y·朴
A·哈德吉克里斯托斯
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Qualcomm Inc
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Qualcomm Inc
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0458—Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0483—Transmitters with multiple parallel paths
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7239—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
CN201380065958.2A 2012-12-19 2013-12-19 多模多频带功率放大器 Active CN104854790B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/720,851 2012-12-19
US13/720,851 US9160377B2 (en) 2012-12-19 2012-12-19 Multi-mode multi-band power amplifiers
PCT/US2013/076749 WO2014100513A1 (en) 2012-12-19 2013-12-19 Multi-mode multi-band power amplifiers

Publications (2)

Publication Number Publication Date
CN104854790A CN104854790A (zh) 2015-08-19
CN104854790B true CN104854790B (zh) 2017-06-30

Family

ID=49956436

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380065958.2A Active CN104854790B (zh) 2012-12-19 2013-12-19 多模多频带功率放大器

Country Status (5)

Country Link
US (1) US9160377B2 (enExample)
EP (1) EP2936679B1 (enExample)
JP (1) JP6017704B2 (enExample)
CN (1) CN104854790B (enExample)
WO (1) WO2014100513A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9444498B2 (en) * 2012-12-03 2016-09-13 Broadcom Corporation Repartitioned transceiver using silicon-on-insulator
US9178555B2 (en) * 2013-02-20 2015-11-03 Micro Mobio Corporation World band radio frequency front end module, system and method thereof
US10643962B1 (en) 2013-02-20 2020-05-05 Micro Mobio Corporation World band radio frequency front end module, system and method of power sensing thereof
US9515615B2 (en) 2013-02-20 2016-12-06 Micro Mobio Corporation World band radio frequency front end module, system and method thereof
US10027287B1 (en) 2013-02-20 2018-07-17 Micro Mobio Corporation World band frequency front end module, system and method thereof
US9425835B2 (en) * 2013-08-09 2016-08-23 Broadcom Corporation Transmitter with reduced counter-intermodulation
JP6291796B2 (ja) * 2013-11-08 2018-03-14 株式会社ソシオネクスト 増幅器
US9595933B2 (en) * 2013-12-30 2017-03-14 Lansus Technologies Inc. Power amplifier device and circuits
US9590569B2 (en) * 2014-05-06 2017-03-07 Skyworks Solutions, Inc. Systems, circuits and methods related to low power efficiency improvement in multi-mode multi-band power amplifiers
US9356560B2 (en) * 2014-08-01 2016-05-31 Qualcomm Incorporated Multi-mode integrated power amplifier
US9548767B2 (en) 2014-11-04 2017-01-17 Qualcomm Incorporated Multi-band amplifier
KR102123600B1 (ko) * 2015-05-29 2020-06-15 삼성전기주식회사 프론트 엔드 회로
US9543900B1 (en) * 2015-06-19 2017-01-10 Qualcomm Incorporated Switchable supply and tunable load impedance power amplifier
US10103754B2 (en) * 2016-07-17 2018-10-16 Skyworks Solutions, Inc. Architectures and methods related to transmit signal routing with re-use of filters
US10177723B2 (en) 2016-08-30 2019-01-08 Qualcomm Incorporated Reconfigurable power amplifier
US10256783B2 (en) * 2016-11-29 2019-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Dual-mode RF transmission frontend
JP2018137566A (ja) * 2017-02-21 2018-08-30 株式会社村田製作所 電力増幅回路
US10230300B2 (en) * 2017-04-25 2019-03-12 Cirrus Logic, Inc. Power converter predriver system with multiple power modes
US10110177B1 (en) * 2017-07-28 2018-10-23 Silicon Laboratories Inc. Programmable impedance control for a transformer
WO2019145597A1 (en) * 2018-01-23 2019-08-01 Teknologian Tutkimuskeskus Vtt Oy Transformer based switches and systems for palna transceivers
CN109196783B (zh) * 2018-04-12 2020-04-24 深圳市汇顶科技股份有限公司 具有低电压开关的多模式可配置的收发器及其配置方法
US10333579B1 (en) * 2018-04-12 2019-06-25 Shenzhen GOODIX Technology Co., Ltd. Multi-mode configurable transceiver with low voltage switches
US11283416B2 (en) * 2018-08-13 2022-03-22 Skyworks Solutions, Inc. Loadline switchable push/pull power amplifier
US11671061B2 (en) * 2018-09-26 2023-06-06 Skyworks Solutions, Inc. Load-line switching for push-pull power amplifiers
JP7275624B2 (ja) * 2019-02-13 2023-05-18 株式会社デンソー 周波数帯域可変高周波増幅器
RU2710292C1 (ru) * 2019-05-22 2019-12-25 федеральное государственное бюджетное образовательное учреждение высшего образования "Донской государственный технический университет" (ДГТУ Низкочувствительный активный rc-фильтр второго порядка на основе двух мультидифференциальных операционных усилителей
RU2710852C1 (ru) * 2019-05-23 2020-01-14 федеральное государственное бюджетное образовательное учреждение высшего образования "Донской государственный технический университет" (ДГТУ) Низкочувствительный arc-фильтр второго порядка на основе двух мультидифференциальных операционных усилителей
US11050387B2 (en) * 2019-09-09 2021-06-29 Texas Instruments Incorporated Integrated circuit devices with parallel power amplifier output paths
RU2720559C1 (ru) * 2019-11-22 2020-05-12 федеральное государственное бюджетное образовательное учреждение высшего образования "Донской государственный технический университет" (ДГТУ) Активный rc-фильтр нижних частот с одноэлементной перестройкой частоты полюса на дифференциальном и двух мультидифференциальных операционных усилителях
JP2022012549A (ja) 2020-07-01 2022-01-17 株式会社村田製作所 電力増幅回路
CN112398777B (zh) * 2020-10-21 2023-02-03 中交航信（上海）科技有限公司 甚高频数据交换系统
US12470184B2 (en) * 2021-03-31 2025-11-11 Skyworks Solutions, Inc. Multi-mode power amplifier signal switching
US11606109B2 (en) * 2021-04-22 2023-03-14 Texas Instruments Incorporated Dynamically configurable transmitter power levels
WO2023022846A1 (en) 2021-08-16 2023-02-23 Qualcomm Incorporated Multi-mode multi-port driver for transceiver interface
US11990876B2 (en) * 2021-08-16 2024-05-21 Qualcomm Incorporated Multi-mode multi-port driver for transceiver interface
WO2023068079A1 (ja) * 2021-10-22 2023-04-27 株式会社村田製作所 高周波回路および通信装置
US11984922B2 (en) * 2021-11-30 2024-05-14 Raytheon Company Differential probe with single transceiver antenna
CN114629453A (zh) * 2022-04-22 2022-06-14 深圳昂瑞微电子技术有限公司 射频功率放大器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6489843B1 (en) * 1995-09-29 2002-12-03 Matsushita Electric Industrial Co., Ltd. Power amplifier and communication unit
DE10361660A1 (de) * 2003-12-30 2005-02-03 Infineon Technologies Ag Leistungsverstärkeranordnung und Verfahren zum Verstärken eines Signals
US20100248660A1 (en) * 2009-03-24 2010-09-30 Bavisi Amit D RF Multiband Transmitter with Balun
WO2011017368A1 (en) * 2009-08-03 2011-02-10 Qualcomm Incorporated Multi-stage impedance matching
CN102687391A (zh) * 2009-11-13 2012-09-19 高通股份有限公司 具有基于变压器的旁路模式的级联放大器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07115331A (ja) * 1993-10-19 1995-05-02 Mitsubishi Electric Corp 増幅装置
JPH09148852A (ja) * 1995-11-24 1997-06-06 Matsushita Electric Ind Co Ltd 送信出力可変装置
JP3587346B2 (ja) * 1998-08-07 2004-11-10 松下電器産業株式会社 無線通信装置および無線通信装置における送信電力制御方法
US6625430B2 (en) * 1998-12-15 2003-09-23 Ericsson Inc. Method and apparatus for attaining higher amplifier efficiencies at lower power levels
US8130043B2 (en) 2003-09-25 2012-03-06 Anadigics, Inc. Multi-stage power amplifier with enhanced efficiency
US8280325B2 (en) 2006-06-23 2012-10-02 Broadcom Corporation Configurable transmitter
US7630693B2 (en) * 2006-11-16 2009-12-08 Freescale Semiconductor, Inc. Transmitter with improved power efficiency
US7952433B2 (en) 2008-11-25 2011-05-31 Samsung Electro-Mechanics Company Power amplifiers with discrete power control
US7944296B1 (en) 2010-03-12 2011-05-17 Samsung Electro-Mechanics Company Low power mode amplification with a transformer output matching and a virtual ground
WO2012098863A1 (ja) * 2011-01-20 2012-07-26 パナソニック株式会社 高周波電力増幅器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6489843B1 (en) * 1995-09-29 2002-12-03 Matsushita Electric Industrial Co., Ltd. Power amplifier and communication unit
DE10361660A1 (de) * 2003-12-30 2005-02-03 Infineon Technologies Ag Leistungsverstärkeranordnung und Verfahren zum Verstärken eines Signals
US20100248660A1 (en) * 2009-03-24 2010-09-30 Bavisi Amit D RF Multiband Transmitter with Balun
WO2011017368A1 (en) * 2009-08-03 2011-02-10 Qualcomm Incorporated Multi-stage impedance matching
CN102687391A (zh) * 2009-11-13 2012-09-19 高通股份有限公司 具有基于变压器的旁路模式的级联放大器

Also Published As

Publication number Publication date
EP2936679A1 (en) 2015-10-28
JP6017704B2 (ja) 2016-11-02
WO2014100513A1 (en) 2014-06-26
US20150050901A1 (en) 2015-02-19
US9160377B2 (en) 2015-10-13
CN104854790A (zh) 2015-08-19
JP2016501503A (ja) 2016-01-18
EP2936679B1 (en) 2018-10-17

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